CN113488393A - Method for realizing reliable bonding of silicon-based functional unit and mounting matrix - Google Patents
Method for realizing reliable bonding of silicon-based functional unit and mounting matrix Download PDFInfo
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- CN113488393A CN113488393A CN202110570750.2A CN202110570750A CN113488393A CN 113488393 A CN113488393 A CN 113488393A CN 202110570750 A CN202110570750 A CN 202110570750A CN 113488393 A CN113488393 A CN 113488393A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 55
- 239000010703 silicon Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000011159 matrix material Substances 0.000 title description 2
- 238000006243 chemical reaction Methods 0.000 claims abstract description 72
- 230000007704 transition Effects 0.000 claims abstract description 28
- 238000009434 installation Methods 0.000 claims abstract description 10
- 238000004381 surface treatment Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 9
- 230000005496 eutectics Effects 0.000 claims description 7
- 238000004100 electronic packaging Methods 0.000 abstract description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 8
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
The invention relates to the technical field of electronic packaging, and discloses a method for realizing reliable bonding of a silicon-based functional unit and a mounting base body, wherein the bonding of the silicon-based functional unit and the mounting base body is realized through a middle conversion carrier plate, and the method comprises the following steps: step 1: respectively determining the thermal expansion coefficients of the silicon-based functional unit and the mounting base body; step 2: determining the thermal expansion coefficients of the top layer and the lower layer of the middle conversion carrier plate according to the result of 1, so that the thermal expansion coefficients of the top layer and the silicon-based energy units are similar, and the thermal expansion coefficients of the bottom layer and the installation base body are similar; and step 3: determining the number of intermediate transition layers of the intermediate conversion carrier plate and the thermal expansion coefficient of each transition layer according to the thermal expansion coefficient difference between the top layer and the bottom layer of the intermediate conversion carrier plate; and 4, step 4: carrying out surface treatment on the intermediate conversion carrier plate; and 5: the silicon-based functional unit is firstly bonded on the top layer of the middle conversion carrier plate, and then the whole body is bonded on the installation base body. The method effectively improves the use reliability of the electronic product.
Description
Technical Field
The invention belongs to the technical field of electronic packaging, and particularly relates to a method for realizing reliable bonding of a silicon-based functional unit and a mounting base body.
Background
With the continuous improvement of the integration level of electronic products and the improvement of chip processing technology, the application of the silicon-based three-dimensional integrated multifunctional unit based on the TSV technology is wider and wider, the silicon-based multifunctional unit generally has a larger packaging size (the length and width dimensions generally exceed 5mm), the thermal expansion coefficient of the silicon-based multifunctional unit is about 4, and the silicon-based multifunctional unit is fragile and requires a good grounding effect, so that the silicon-based three-dimensional integrated multifunctional unit is integrated on a mounting substrate in an adhesion manner in the conventional method at present. For the large-sized silicon-based functional unit, the mounting base is usually an organic substrate or a metal case, the thermal expansion coefficient of the organic substrate is usually about 20, while the thermal expansion coefficient of the commonly used aluminum alloy metal case is 23. If the large-size silicon-based functional unit is directly bonded with the mounting substrate, the large-size silicon-based functional unit is easy to fall off or crack due to temperature variation in subsequent use because of too large difference of thermal expansion coefficients between the large-size silicon-based functional unit and the mounting substrate.
In order to realize reliable bonding between a functional unit with large difference of thermal expansion coefficients and a mounting base body (such as a silicon-based chip and an aluminum alloy cavity), the conventional method in the industry is to adopt a metal material with a thermal expansion coefficient between molybdenum copper or tungsten copper and the like to make a carrier plate, eutectic or bond the chip on the carrier plate, and then integrally bond the chip on a box body so as to prevent the functional unit from cracking and falling off and the like caused by thermal expansion mismatch. However, this method is not suitable for mounting a large-sized functional unit because of the following two reasons:
1. the form of the functional unit, the molybdenum copper (tungsten copper) carrier plate and the mounting base body increases the coefficient of thermal expansion of the material in a gradient manner on the whole, and the functional unit is usually made of Si, GaAs, GaN and other materials, and the high brittleness of the functional unit is easy to break along with the increase of the size and the mismatch of the coefficient of thermal expansion.
2. The molybdenum-copper (tungsten-copper) carrier plates and other carrier plates have high density, the overall weight of the molybdenum-copper (tungsten-copper) carrier plates is increased along with the increase of the size, the inertia is increased, and the molybdenum-copper (tungsten-copper) carrier plates and other carrier plates are easy to fall off due to factors such as vibration impact in subsequent use.
Patent CN110265365A discloses a high heat-resistant package carrier, in which the difference of thermal expansion coefficients between the electronic components, the high heat-resistant insulating layer and the substrate of the high heat-resistant package carrier mentioned herein gradually decreases, and the reliability problem caused by thermal expansion mismatch in the bonding process is solved to a certain extent, but the carrier has a certain correlation with the circuit pattern thereon, the processing technology is complex, the application range is narrow, and the cost is high.
Disclosure of Invention
The invention aims to: the method can conveniently realize the reliable bonding of the large-size silicon-based functional unit and the mounting base body, solves the problem of matching and bonding between an upper material and a lower material with larger difference of thermal expansion coefficients, and can effectively improve the use reliability of electronic products.
The purpose of the invention is realized by the following technical scheme: a method for realizing reliable bonding of a silicon-based functional unit and a mounting substrate, wherein the bonding of the silicon-based functional unit and the mounting substrate is realized through an intermediate conversion carrier plate, and the method comprises the following steps:
step 1: respectively determining the thermal expansion coefficients of the silicon-based functional unit and the mounting base body;
step 2: after the thermal expansion coefficients of the silicon-based functional units and the installation base body are determined, determining the thermal expansion coefficient of the top layer of the intermediate conversion carrier plate according to the thermal expansion coefficient of the silicon-based functional units, so that the difference between the thermal expansion coefficient of the top layer of the intermediate conversion carrier plate and the thermal expansion coefficient of the silicon-based functional units is not more than 5 ppm; determining the thermal expansion coefficient of the bottom layer of the intermediate conversion carrier plate according to the thermal expansion coefficient of the mounting base body, so that the difference between the thermal expansion coefficient of the bottom layer of the intermediate conversion carrier plate and the thermal expansion coefficient of the mounting base body is not more than 5 ppm;
and step 3: determining the number of transition layers of the middle conversion carrier plate and the thermal expansion coefficient of each transition layer according to the difference between the thermal expansion coefficient of the top layer of the middle conversion carrier plate and the thermal expansion coefficient of the bottom layer of the middle conversion carrier plate;
and 4, step 4: performing surface treatment on the top layer and the bottom layer of the middle conversion carrier plate;
and 5: the silicon-based functional unit is connected with the top layer of the middle conversion carrier plate, and then the bottom layer of the middle conversion carrier plate is connected on the installation base body.
Alternatively, the intermediate conversion plate includes a top layer connected to the silicon-based functional unit, a bottom layer connected to the mounting substrate, and a transition layer disposed between the top layer and the bottom layer.
Optionally, the intermediate conversion carrier plate is made of a gradient silicon-aluminum material.
Alternatively, the silicon-based functional unit is connected with the top layer of the middle conversion carrier plate in an adhesion or eutectic mode.
Alternatively, the mounting substrate is connected to the bottom layer of the intermediate conversion carrier plate by means of bonding or eutectic bonding.
Optionally, in step 3, the process of determining the number of transition layers of the intermediate conversion carrier includes: the process for determining the number of the transition layers of the intermediate conversion carrier plate comprises the following steps:
setting the thermal expansion coefficient of the top layer of the middle conversion carrier plate as A, the thermal expansion coefficient of the bottom layer of the middle conversion carrier plate as B, and setting the difference between the thermal expansion coefficient of the bottom layer of the middle conversion carrier plate and the thermal expansion coefficient of the top layer of the middle conversion carrier plate as B-A ═ C, when C is less than A, no transition layer needs to be arranged, when MA is less than C and less than (M +1) A, M transition layers need to be arranged, wherein M is an integer greater than or equal to 1.
Alternatively, in step 3, the determining the thermal expansion coefficient of each transition layer includes: the value is taken as the thermal expansion coefficient of the transition layer in the numerical range from the thermal expansion coefficient of the top layer of the middle conversion carrier plate to the thermal expansion coefficient of the bottom layer of the middle conversion carrier plate.
The main scheme and the further selection schemes can be freely combined to form a plurality of schemes which are all adopted and claimed by the invention; in the invention, the selection (each non-conflict selection) and other selections can be freely combined. The skilled person in the art can understand that there are many combinations, which are all the technical solutions to be protected by the present invention, according to the prior art and the common general knowledge after understanding the scheme of the present invention, and the technical solutions are not exhaustive herein.
The method for realizing the reliable bonding of the large-size silicon-based functional unit and the mounting substrate has the following advantages:
1. the implementation mode is simple;
2. the universality is strong, and the application range is wide;
3. the adhesive is suitable for bonding large-size functional units and can also be used for bonding small-size functional units;
4. the weight is light.
The invention solves the defects of the prior art and is suitable for reliable assembly of the functional units in the field of microwave radio frequency electronic packaging.
Drawings
FIG. 1 is a schematic illustration of the bonding of a silicon-based functional unit to a mounting substrate;
FIG. 2 is a schematic structural diagram of a gradient Si-Al carrier plate;
wherein 1 is a silicon-based functional unit, 2 is a middle conversion carrier plate, 3 is an installation base body, 201 is a top layer of the gradient silicon-aluminum carrier plate, 202, 204 is a transition layer of the gradient silicon-aluminum carrier plate, and 205 is a bottom layer of the gradient silicon-aluminum carrier plate.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the embodiments of the present invention, it should be noted that the indication of the orientation or the positional relationship is based on the orientation or the positional relationship shown in the drawings, or the orientation or the positional relationship which is usually placed when the product of the present invention is used, or the orientation or the positional relationship which is usually understood by those skilled in the art, or the orientation or the positional relationship which is usually placed when the product of the present invention is used, and is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the indicated device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, cannot be understood as limiting the present invention. Furthermore, the terms "first" and "second" are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present invention, it should be further noted that the terms "disposed" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, unless explicitly stated or limited otherwise; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases by those skilled in the art; the drawings in the embodiments are used for clearly and completely describing the technical scheme in the embodiments of the invention, and obviously, the described embodiments are a part of the embodiments of the invention, but not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Example 1:
the embodiment provides a method for realizing reliable bonding of a silicon-based functional unit and a mounting substrate, which can solve the problem that bonding is not firm due to a large difference between thermal expansion coefficients of the silicon-based functional unit and the mounting substrate, wherein the bonding between the silicon-based functional unit and the mounting substrate is realized by arranging an intermediate conversion carrier plate between the silicon-based functional unit and the mounting substrate, as shown in fig. 1, specifically, the method comprises the following steps:
step 1: respectively determining the thermal expansion coefficients of the silicon-based functional unit and the mounting base body;
step 2: after the thermal expansion coefficients of the silicon-based functional units and the installation base body are determined, determining the thermal expansion coefficient of the top layer of the intermediate conversion carrier plate according to the thermal expansion coefficient of the silicon-based functional units, so that the difference between the thermal expansion coefficient of the top layer of the intermediate conversion carrier plate and the thermal expansion coefficient of the silicon-based functional units is not more than 5 ppm; determining the thermal expansion coefficient of the bottom layer of the intermediate conversion carrier plate according to the thermal expansion coefficient of the mounting base body, so that the difference between the thermal expansion coefficient of the bottom layer of the intermediate conversion carrier plate and the thermal expansion coefficient of the mounting base body is not more than 5 ppm;
and step 3: determining the number of transition layers of the intermediate conversion carrier plate and the thermal expansion coefficient of each layer according to the difference between the thermal expansion coefficient of the top layer of the intermediate conversion carrier plate and the thermal expansion coefficient of the bottom layer of the intermediate conversion carrier plate;
and 4, step 4: the top layer and the bottom layer of the middle conversion carrier plate are subjected to surface treatment, so that subsequent connection is facilitated;
and 5: the silicon-based functional unit is connected with the top layer of the middle conversion carrier plate, and then the bottom layer of the middle conversion carrier plate is connected on the installation base body.
In step 3, the layer number determining process and the thermal expansion coefficient determining process of the transition layer of the intermediate conversion carrier plate are as follows: setting the thermal expansion coefficient of the top layer of the middle conversion carrier plate as A, the thermal expansion coefficient of the bottom layer of the middle conversion carrier plate as B, and setting the difference between the thermal expansion coefficient of the bottom layer of the middle conversion carrier plate and the thermal expansion coefficient of the top layer of the middle conversion carrier plate as B-A ═ C, when C is less than A, no transition layer needs to be arranged, when MA is less than C and less than (M +1) A, M transition layers need to be arranged, wherein M is an integer greater than or equal to 1. The value is taken as the thermal expansion coefficient of the transition layer in the numerical range from the thermal expansion coefficient of the top layer of the middle conversion carrier plate to the thermal expansion coefficient of the bottom layer of the middle conversion carrier plate.
Specifically, in this embodiment, the silicon-based functional unit is firstly connected to the intermediate conversion carrier plate by means of bonding or eutectic bonding, and then the connected silicon-based functional unit and the intermediate conversion carrier plate are bonded or eutectic bonded to the mounting substrate, so as to achieve bonding between the silicon-based functional unit and the mounting substrate.
Specifically, in this embodiment, the intermediate conversion carrier plate is a gradient silicon-aluminum carrier plate, the gradient silicon-aluminum carrier plate is integrally manufactured by a mature method existing in the industry, although a finished product is divided into a plurality of material layers with different thermal expansion coefficients, the material atoms are directly bonded between the layers, the whole carrier plate can be regarded as a complete part, and the overall strength completely meets the use requirement in this embodiment. Meanwhile, the gradient silicon-aluminum material has small density and light weight, so that the influence of vibration impact and the like on the bonding reliability is reduced, and the overall reliability is improved. Meanwhile, the thermal expansion coefficient of the carrier plate from top to bottom can be changed more smoothly by increasing the number of layers.
Specifically, in this embodiment, the gradient silicon aluminum carrier plate has a structure as shown in fig. 2, where a thermal expansion coefficient of a 201 layer is similar to a thermal expansion coefficient of a silicon-based functional unit, a thermal expansion coefficient of a 205 layer is similar to a thermal expansion coefficient of an installation base, specifically, a thermal expansion coefficient a of the 201 layer is 5ppm, a thermal expansion coefficient B of the 205 layer is 23ppm, a difference C between the two is 18ppm, and 18ppm is in a range of 15 to 20ppm, so that three transition layers 202, 203, and 204 are provided in this embodiment, and thermal expansion coefficients of three transitions 202, 203, and 204 are uniformly valued as much as possible in a range of 5ppm to 23 ppm.
The number of layers of the gradient sialon carrier plate is not limited to the 5-layer structure shown in fig. 2, and the specific structure thereof may be changed according to the actual application, but at least because the gradient sialon carrier plate includes 201 layers and 205 layers, the number of layers of the intermediate transition layer is determined by the difference between the thermal expansion coefficients of 201 layers and 205 layers.
The foregoing basic embodiments of the invention and their various further alternatives can be freely combined to form multiple embodiments, all of which are contemplated and claimed herein. In the scheme of the invention, each selection example can be combined with any other basic example and selection example at will. For example, fig. … … can also be regarded as a combination of the basic example and the option … …, fig. … … can also be regarded as a combination of the basic example and the option … …, and so on, which are not exhaustive, and those skilled in the art can recognize many combinations.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (7)
1. A method for realizing reliable bonding of a silicon-based functional unit and a mounting substrate is characterized in that the bonding of the silicon-based functional unit and the mounting substrate is realized through an intermediate conversion carrier plate, and the method comprises the following steps:
step 1: respectively determining the thermal expansion coefficients of the silicon-based functional unit and the mounting base body;
step 2: after the thermal expansion coefficients of the silicon-based functional units and the installation base body are determined, determining the thermal expansion coefficient of the top layer of the intermediate conversion carrier plate according to the thermal expansion coefficient of the silicon-based functional units, so that the difference between the thermal expansion coefficient of the top layer of the intermediate conversion carrier plate and the thermal expansion coefficient of the silicon-based functional units is not more than 5 ppm; determining the thermal expansion coefficient of the bottom layer of the intermediate conversion carrier plate according to the thermal expansion coefficient of the mounting base body, so that the difference between the thermal expansion coefficient of the bottom layer of the intermediate conversion carrier plate and the thermal expansion coefficient of the mounting base body is not more than 5 ppm;
and step 3: determining the number of transition layers of the middle conversion carrier plate and the thermal expansion coefficient of each transition layer according to the difference between the thermal expansion coefficient of the top layer of the middle conversion carrier plate and the thermal expansion coefficient of the bottom layer of the middle conversion carrier plate;
and 4, step 4: performing surface treatment on the top layer and the bottom layer of the middle conversion carrier plate;
and 5: the silicon-based functional unit is connected with the top layer of the middle conversion carrier plate, and then the bottom layer of the middle conversion carrier plate is connected on the installation base body.
2. A method of achieving reliable bonding of a silicon-based functional unit to a mounting substrate according to claim 1, characterized in that the transition layer is arranged between the top layer and the bottom layer of the intermediate conversion carrier plate.
3. The method according to claim 2, wherein the intermediate conversion carrier is made of a gradient si-ai material.
4. The method for achieving reliable bonding of the silicon-based functional unit and the mounting substrate as claimed in claim 1, wherein the silicon-based functional unit is connected with the top layer of the intermediate conversion carrier plate by means of bonding or eutectic bonding.
5. The method of claim 1, wherein the mounting substrate is attached to the bottom layer of the intermediate transfer carrier by bonding or eutectic bonding.
6. The method according to claim 1, wherein the step 3 of determining the number of transition layers of the intermediate conversion carrier comprises:
setting the thermal expansion coefficient of the top layer of the middle conversion carrier plate as A, the thermal expansion coefficient of the bottom layer of the middle conversion carrier plate as B, and setting the difference between the thermal expansion coefficient of the bottom layer of the middle conversion carrier plate and the thermal expansion coefficient of the top layer of the middle conversion carrier plate as B-A ═ C, when C is less than A, no transition layer needs to be arranged, when MA is less than C and less than (M +1) A, M transition layers need to be arranged, wherein M is an integer greater than or equal to 1.
7. The method for achieving reliable bonding of a silicon-based functional unit to a mounting substrate as claimed in claim 6, wherein in the step 3, the determining of the thermal expansion coefficient of each transition layer comprises: the value is taken as the thermal expansion coefficient of the transition layer in the numerical range from the thermal expansion coefficient of the top layer of the middle conversion carrier plate to the thermal expansion coefficient of the bottom layer of the middle conversion carrier plate.
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2021
- 2021-05-25 CN CN202110570750.2A patent/CN113488393A/en active Pending
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| JP2008216973A (en) * | 2007-02-05 | 2008-09-18 | Sharp Corp | Optical component and its manufacturing method |
| CN101143397A (en) * | 2007-11-06 | 2008-03-19 | 北京有色金属研究总院 | C/C and C/SiC composite material and metal connecting method |
| US20100288636A1 (en) * | 2009-05-15 | 2010-11-18 | Denso Corporation | Laminated gas sensor and method of producing the same |
| US20150072119A1 (en) * | 2012-04-12 | 2015-03-12 | The Regents Of The University Of Colorado, A Body Corporate | Multi-layer structure including an interlayer to reduce stress in the structure and method of forming same |
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Application publication date: 20211008 |