CN113421239B - Identification method, identification device, semiconductor processing apparatus, and readable storage medium - Google Patents

Abstract

The application discloses an identification method. The identification method is used for identifying the deflection angle of the characteristic pattern array, each characteristic pattern comprises characteristic points with known positions, and comprises the following steps: selecting a characteristic point as a first datum point; searching one or more characteristic points which are collinear with the first datum point as fitting points; fitting the first datum point and the fitting point to obtain a first datum line extending along a first direction; a deflection angle of the feature pattern array is identified based on the first fiducial line. The application also discloses an identification device, semiconductor processing equipment and a computer readable storage medium. The first datum point is selected from the feature points with known positions, and fitted with one or more fitting points to obtain a first datum line, wherein the first datum line reflects deflection angle information of the feature pattern array, and the deflection angle of the feature pattern array can be identified according to the first datum line.

Description

Identification method, identification device, semiconductor processing apparatus, and readable storage medium

Technical Field

The present application relates to the field of industrial detection technologies, and in particular, to an identification method, an identification device, a semiconductor processing apparatus, and a readable storage medium.

Background

During the whole preparation process of the semiconductor product, defect detection may need to be performed on products obtained by different processes to determine whether the next process can be performed. Taking a wafer as an example, the wafer is a substrate for preparing chips, the wafer needs to be processed by a plurality of processes to prepare chips, in the wafer processing process, optical means are generally adopted to detect whether defects exist on the surface of the wafer or not and specific positions of the defects in the surface of the wafer, and before the specific positions of the defects in the surface of the wafer are detected, the wafer needs to be ensured not to deflect, so that how to determine the deflection angle of semiconductor products such as the wafer becomes a problem to be solved.

Disclosure of Invention

The embodiment of the application provides an identification method, an identification device, semiconductor processing equipment and a computer readable storage medium.

The identification method of the embodiment of the application is used for identifying the deflection angle of the characteristic pattern array, each characteristic pattern comprises characteristic points with known positions, and comprises the following steps: selecting a characteristic point as a first datum point; searching one or more characteristic points collinear with the first datum point as fitting points; fitting the first reference point and the fitting point to obtain a first reference line extending along a first direction; a deflection angle of the feature pattern array is identified based on the first fiducial line.

In some embodiments, the searching for one or more feature points collinear with the first reference point as fitting points comprises: searching for a characteristic point within a preset distance threshold from the first datum point; if the number of the searched feature points is two, the two searched feature points are used as the fitting points; and if the number of the searched feature points is greater than or equal to four, taking any two feature points which are opposite to each other from the four points which are closest to the first datum point as the fitting points.

In certain embodiments, the feature pattern is rectangular, the feature pattern comprising long sides and short sides; the range of the distance threshold value is larger than the length of the short side and smaller than the length of the long side; or the ratio of the distance threshold to the length of the short side is in the range of more than 1 and less than 1.5.

In some embodiments, the identifying the deflection angle of the feature pattern array based on the first reference line includes: obtaining a fitting line with a plurality of characteristic points arranged according to the first datum line, the size of the characteristic pattern and the positions of the characteristic points; and identifying a deflection angle of the feature pattern array based on a plurality of the fitted lines.

In some embodiments, according to the first reference line, the size of the feature pattern, and the positions of the plurality of feature points, obtaining the fitted line with the plurality of feature point arrangements includes: determining a first theoretical point on the first reference line along the first direction by taking the first reference point as a starting point according to the size of the characteristic pattern; respectively passing through each first theoretical point, and acquiring a straight line which forms a preset angle with the first datum line so as to acquire a first theoretical line extending along a second direction; acquiring a plurality of characteristic points collinear along the second direction as first collinear characteristic points according to the position relation between the characteristic points and the first theoretical line; and fitting the first common line characteristic points to obtain a first fitting line.

In some embodiments, the obtaining, according to the positional relationship between the feature point and the first theoretical line, the feature points that are collinear along the second direction as first common line feature points includes: determining a second theoretical point on the first theoretical line according to the size of the characteristic pattern along the second direction by taking the first theoretical point as a starting point; and searching a feature point closest to each second theoretical point as the first common line feature point.

In some embodiments, the obtaining the fitted line with the plurality of feature points according to the first reference line, the size of the feature pattern, and the positions of the plurality of feature points further includes: through the first datum point, a straight line which forms a preset angle with the first datum line is obtained, so that a second datum line extending along the second direction is obtained; determining a second theoretical point on the second reference line according to the size of the characteristic pattern along the second direction by taking the first reference point as a starting point; respectively passing through each second theoretical point, and acquiring a straight line which forms the preset angle with the second datum line so as to acquire a second theoretical line extending along the first direction; acquiring a plurality of characteristic points which are collinear along the first direction as the second collinear characteristic points according to the position relation between the characteristic points and the second theoretical line; and fitting the second collinear feature points to obtain a second fitted line.

In some embodiments, the obtaining the plurality of feature points that are collinear along the first direction as the second collinear feature points according to the positional relationship between the feature points and the second theoretical line includes: determining a third theoretical point on the second theoretical line according to the size of the characteristic pattern along the first direction by taking the second theoretical point as a starting point; and searching a feature point closest to each third theoretical point as the second collinear feature point.

In some implementations, the identifying the deflection angle of the feature pattern array based on a plurality of the fit lines includes:

Calculating an angle difference between each of the plurality of second fitting lines and the preset angle respectively; and calculating an average value of a sum of the angle differences and the inclination angles of the first fitting lines as the deflection angle.

In some embodiments, the feature pattern is a polygon, and the preset angle is an angle between two adjacent sides of the feature pattern.

An identification device according to an embodiment of the present application is configured to identify a deflection angle of an array of feature patterns, each of the feature patterns including feature points whose positions are known, the identification device including:

the selecting module is used for selecting one characteristic point as a first datum point;

a search module for searching one or more feature points collinear with the first reference point as fitting points;

The fitting module is used for fitting the first datum point and the fitting point to obtain a first datum line extending along a first direction;

And the identification module is used for identifying the deflection angle of the characteristic pattern array based on the first datum line.

The semiconductor processing apparatus of an embodiment of the present application includes:

A memory storing an array of feature patterns and a location of a feature point of each of the feature patterns; and

And the processor is used for executing the identification method according to any embodiment of the application.

The non-transitory computer readable storage medium of an embodiment of the present application stores a computer program that, when executed by one or more processors, causes the processors to perform the identification method of any of the embodiments of the present application.

In the identification method, the identification device, the semiconductor processing equipment and the computer readable storage medium of the embodiment of the application, the first datum point is selected from the characteristic points at the known positions, and the first datum point and one or more fitting points are fitted to obtain the first datum line, the first datum line reflects the deflection angle information of the characteristic pattern array, and the deflection angle of the characteristic pattern array can be identified according to the first datum line so as to determine the deflection angle of the workpiece with the characteristic pattern.

Additional aspects and advantages of embodiments of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the application.

Drawings

The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a flow diagram of an identification method according to some embodiments of the application;

FIG. 2 is a block diagram of an identification device according to some embodiments of the application;

FIG. 3 is a schematic view of the structure of a semiconductor processing apparatus according to certain embodiments of the present application;

FIGS. 4 and 5 are schematic diagrams of identification methods according to some embodiments of the present application;

FIG. 6 is a flow chart of an identification method of some embodiments of the application;

FIG. 7 is a block diagram of an identification appliance of some embodiments of the present application;

FIGS. 8 and 9 are schematic diagrams of identification methods according to some embodiments of the present application;

FIG. 10 is a flow chart of an identification method of some embodiments of the application;

FIG. 11 is a block diagram of an identification appliance of some embodiments of the present application;

FIG. 12 is a flow chart of an identification method of some embodiments of the application;

FIG. 13 is a block diagram of an identification appliance of certain embodiments of the present application;

FIGS. 14-16 are schematic illustrations of identification methods according to certain embodiments of the present application;

FIG. 17 is a flow chart of an identification method of some embodiments of the application;

FIG. 18 is a block diagram of an identification appliance of some embodiments of the present application;

FIG. 19 is a flow chart of an identification method of some embodiments of the application;

FIG. 20 is a block diagram of an identification appliance of some embodiments of the present application;

FIGS. 21 and 22 are schematic diagrams of identification methods according to certain embodiments of the present application;

FIG. 23 is a flow chart of an identification method of some embodiments of the application;

FIG. 24 is a block diagram of an identification appliance of some embodiments of the present application;

FIG. 25 is a schematic diagram of an identification method according to some embodiments of the application;

FIG. 26 is a flow chart of an identification method of some embodiments of the application;

FIG. 27 is a block diagram of an identification appliance of some embodiments of the present application;

FIG. 28 is a schematic diagram of an identification method according to some embodiments of the application;

FIG. 29 is a schematic diagram of a computer readable storage medium coupled to a processor in accordance with some embodiments of the application.

Detailed Description

Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the embodiments of the present application and are not to be construed as limiting the embodiments of the present application.

Referring to fig. 1, an embodiment of the present application discloses a method for identifying a deflection angle of an array of feature patterns, each feature pattern including feature points with known positions, the method comprising the steps of:

01: selecting a characteristic point as a first datum point;

02: searching one or more characteristic points which are collinear with the first datum point as fitting points;

03: fitting the first datum point and the fitting point to obtain a first datum line extending along a first direction; and

04: A deflection angle of the feature pattern array is identified based on the first fiducial line.

Referring to fig. 1 and fig. 2, the embodiment of the present application further discloses an identification device 10, and the identification device 10 can be used to implement the identification method according to the embodiment of the present application. The identification device 10 comprises a selection module 11, a search module 12, a fitting module 13 and an identification module 14; the selecting module 11 may be configured to implement step 01, that is, the selecting module 11 may be configured to select a feature point as the first reference point; the search module 12 may be used to implement step 02, i.e. the search module 12 may be used to search for one or more feature points collinear with the first reference point as fitting points; the fitting module 13 may be used to implement step 03, i.e. the fitting module 13 may be used to fit the first reference point to the fitting point to obtain a first reference line extending in the first direction; the identification module 14 may be used to implement step 04, i.e. the identification module 14 may be used to identify the deflection angle of the feature pattern array based on the first reference line.

Referring to fig. 3, the embodiment of the present application further discloses a semiconductor processing apparatus 20, where the semiconductor processing apparatus 20 includes a memory 21 and a processor 22, and the memory 21 stores a feature pattern array and a position of a feature point of each feature pattern; the processor 22 may be used to implement the identification method of the embodiments of the present application, i.e., the processor 22 may be used to implement step 01, step 02, step 03 and step 04.

In the identification method, the identification device 10 and the semiconductor processing equipment 20 according to the embodiments of the present application, a first datum point is selected from feature points at known positions, and the first datum point and one or more fitting points are fitted to obtain a first datum line, the first datum line reflects deflection angle information of a feature pattern array, and the deflection angle of the feature pattern array can be identified according to the first datum line, so as to determine the deflection angle of the workpiece 100 with the feature pattern, thereby facilitating the adjustment or compensation of the position of the workpiece 100, and improving the accuracy of the semiconductor processing equipment 20 in processing the workpiece 100.

Referring to fig. 3, the semiconductor processing apparatus 20 may be a vision inspection apparatus, a semiconductor processing apparatus, a semiconductor packaging apparatus, etc., without limitation. In the example shown in fig. 3, the semiconductor processing apparatus 20 is a visual inspection apparatus, and the semiconductor processing apparatus 20 may be used to detect the presence of defects on the workpiece 100, or to measure the dimensions of certain features on the workpiece 100, etc. The workpiece 100 may be any device such as a wafer, a chip, a display panel, a substrate, a film, a circuit board, a mask, a cover plate, or a housing, and the present application is not limited thereto, and the workpiece 100 is exemplified as a wafer.

In the example shown in fig. 3, the semiconductor processing apparatus 20 further includes a detector 23, a carrier 24, a transporter 25, and a base 26. The base 26 may be used to mount the detector 23 and the carrier 24. The carrier 24 is used for carrying the workpiece 100 to fix the workpiece 100 or to move the workpiece 100 relative to the detector 23. The transporter 25 may be used to transport the workpiece 100 from the carrier 24 or to remove the workpiece 100 from the carrier 24. The detector 23 may be a two-dimensional detector 23 or a three-dimensional detector 23, the detector 23 may be used to image the workpiece 100 to detect the workpiece 100 based on the imaging, and the detector 23 may be in communication with the memory 21, the processor 22, the images acquired by the detector 23 may be stored in the memory 21, or processed by the processor 22.

It will be appreciated that there may be periodically distributed features to be measured in the workpiece 100, such as periodically distributed dies (die) in a wafer, where multiple dies are distributed in an array. When the detector 23 collects the image of the workpiece 100, there will be an array formed by a plurality of feature patterns in the image, the feature patterns are in one-to-one correspondence with the features to be measured in the workpiece 100, and by analyzing the deflection angles of the feature pattern array, the deflection angles of the features to be measured that are periodically distributed can be obtained, and the deflection angles of the workpiece 100 can be further calculated. Thus, by analyzing the deflection angle of the feature pattern array, it can be used to obtain the deflection angle of the workpiece 100.

In step 01, a feature point is selected as a first reference point. Each feature pattern comprises feature points with known positions, the positions of the feature points can be obtained through an image recognition algorithm, and the positions are on-drawing positions in an image. Taking fig. 4 as an example, fig. 4 is a partial image of an array of feature patterns, each feature pattern has a shape similar to a rectangle, and feature points of the feature patterns are located at right lower corner points of the feature patterns, and the feature points are shown as black dots in fig. 4. The shape of the feature pattern may be different for different workpieces 100, for example, a circle, an ellipse, a triangle, a diamond, etc., and the feature point may be selected differently, for example, the feature point may be any point such as a center point of the feature pattern, which is not limited herein.

When the first reference point is selected, any one of the feature points can be selected as the first reference point. In one example, feature points far from the edge of the array in the feature pattern array can be selected as first reference points; in another example, a point in the feature pattern array near the center of the image may be selected as a reference point, such as the first reference point D1 in fig. 4, so as to search for fitting points around the first reference point D1 later.

In step 02, one or more feature points collinear with the first reference point are searched for as fitting points, and the searched fitting points can be used for subsequent fitting with the first reference point to obtain the first reference line, so that the deflection angle of the feature pattern array can be conveniently identified based on the first reference line. It should be noted that, in this step, the alignment is theoretically alignment, that is, in an ideal state, the feature points searched out should be aligned with the first reference point, and the fitting points searched out may not be strictly aligned with the first reference point due to the influence of the manufacturing process accuracy, the calculation deviation, and the like. In one example, the feature points that are fitting points may be searched for according to the distances between the first reference point and the plurality of feature points, and in particular, since the positions of the plurality of feature points on the graph are known, the distances between the first reference point and each feature point may be calculated, and then by filtering the distances, one or more fitting points that are theoretically collinear with the first reference point may be searched for.

In step 03, the first reference point and the fitting point are fitted to obtain a first reference line extending along the first direction, when one fitting point is searched, a straight line connecting the first reference point and the fitting point is the first reference line obtained by fitting, and when a plurality of fitting points are searched, the first reference point and the fitting points are fitted to obtain the first reference line. Taking the example shown in fig. 5 as an example, the first reference line L1 can be obtained by fitting the first reference point D1, the fitting point D2, and the fitting point D3.

In step 04, the deflection angle of the feature pattern array is identified based on the first reference line, wherein, since the first reference line is a straight line fitted by the first reference point and the fitting point which are theoretically collinear, the deflection angle of the feature pattern array is already reflected to a certain extent by the inclination angle of the first reference line, and the deflection angle of the feature pattern array can be identified by further utilizing the first reference line. In one example, the deflection angle of the first reference line may be used as the deflection angle of the feature pattern array, and in another example, more straight lines reflecting the deflection angle may be obtained according to the first reference line and the rest of the feature points, and the deflection angle of the feature pattern array may be further calculated.

Referring to fig. 6, in some embodiments, step 02 includes the steps of:

021: searching for a characteristic point within a preset distance threshold from the first datum point;

022: if the number of the searched feature points is two, taking the two searched feature points as fitting points; and

023: If the number of the searched feature points is greater than or equal to four, any two feature points which are opposite to each other are taken as fitting points from among the four points which are closest to the first datum point.

Referring to fig. 6 and 7, in some embodiments, the search module 12 includes a search unit 121 and a determination unit 122. The search unit 121 may be used to implement step 021, i.e. the search unit 121 may be used to search for feature points within a preset distance threshold from the first reference point. The determining unit 122 may be configured to implement steps 022 and 023, that is, if the number of the searched feature points is two, the determining unit 122 may be configured to use the two searched feature points as fitting points; if the number of the searched feature points is greater than or equal to four, any two feature points which are opposite to each other are taken as fitting points from among the four points which are closest to the first datum point.

In certain embodiments, the processor 22 in the semiconductor processing apparatus 20 may be configured to implement steps 021, 022, and 023.

In step 021, feature points within a preset distance threshold from the first reference point are searched, feature points obtained by searching at positions near the first reference point are more likely to be searched for feature points adjacent to the first reference point, and the likelihood that adjacent feature points are theoretically collinear with the first reference point is higher. The distance threshold is a preset value, and the distance threshold can be set according to the specific size of the feature pattern.

In step 022, if the number of the searched feature points is two, the two searched feature points are set as fitting points. For some feature pattern arrays, the feature pattern has a smaller size in one direction, and a larger size in the other direction, so that in the smaller size direction, the arrangement of a plurality of feature points is tighter, and when the first reference point is taken as the center to search outwards, as long as the set distance threshold is proper, the feature points in the smaller size direction can be searched for in advance. In the example shown in fig. 8, the distance threshold is set as the radius of the dashed circle in fig. 8, and the first reference point D1 is used as the center of the circle, then the feature points falling into the dashed circle are the feature points D2 and D3 obtained by searching, and the feature points D2 and D3 are fitting points that are in line with the first reference point D1 in theory.

Further, in the example shown in fig. 8, the feature pattern is rectangular, the distance threshold may be set to be greater than the length of the short side of the feature pattern and less than the length of the long side of the feature pattern, and by searching for the feature points within the distance threshold, two fitting points along the short side direction may be searched for, and no other feature points may be searched for, so as to reduce interference caused by the remaining feature points when searching for the fitting points. In another example, the ratio of the distance threshold to the length of the short side may be set to be in a range of more than 1 and less than 1.5, for example, 1, 1.2, 1.3, 1.4, 1.5, or any value that meets the range, so that at least two feature points can be searched, and more interference feature points cannot be easily searched.

In step 023, if the number of the searched feature points is greater than or equal to four, any two feature points which are opposite to each other are selected as fitting points from among the four points which are closest to the first reference point. For some feature pattern arrays, the feature patterns have equal dimensions or smaller differences in two directions, in which the density difference of the arrangement of the plurality of feature points is not large, when searching outward with the first reference point as the center, a situation in which feature points are searched out in both directions is easy to occur, or a situation in which feature points are searched out in both directions may also occur due to the distance threshold setting.

As shown in fig. 9, in the example of fig. 9, the distance threshold is set to be the radius of the dashed circle, and the first reference point D1 is used as the center of the circle, then the feature points falling within the dashed circle are the feature points D2, D3, D4, and D5 obtained by searching, and any two feature points opposite to each other are used as fitting points, that is, the feature point D2 and the feature point D3 may be used as fitting points, or the feature point D4 and the feature point D5 may be used as fitting points. Specifically, the feature points D2, D4, D3, D5 may be sequentially connected clockwise or counterclockwise to obtain a quadrangle, and a set of feature points on a diagonal of the quadrangle may be used as fitting points.

If the number of the searched feature points is greater than four, the fitting point is determined by taking the four feature points closest to the first reference point as the basis among the greater than four feature points and combining the example of fig. 9. If the number of the searched feature points is three, the three feature points may be connected in pairs, and two end points of a line having the smallest deviation from the first reference point among the connected lines may be regarded as fitting points. If the number of the searched feature points is one, the one feature point may be regarded as the fitting point.

Therefore, by performing steps 021, 022 and 023, the fitting point that is theoretically collinear with the first reference point can be efficiently searched for. In some embodiments, two feature points closest to the first reference point may be directly taken as fitting points.

Referring to fig. 10, in some embodiments, step 04 includes the steps of:

041: obtaining a fitting line with a plurality of characteristic points arranged according to the first datum line, the size of the characteristic pattern and the positions of the plurality of characteristic points; and

042: The deflection angle of the feature pattern array is identified based on the plurality of fitted lines.

Referring to fig. 10 and 11, in some embodiments, the identification module 14 includes a first obtaining unit 141 and an identification unit 142. The first obtaining unit 141 may be configured to implement step 041, that is, the first obtaining unit 141 may be configured to obtain the fitting line of the arrangement of the plurality of feature points according to the first reference line, the size of the feature pattern, and the positions of the plurality of feature points. The identification unit 142 may be used to implement step 042, i.e. the identification unit 142 may be used to identify the deflection angle of the feature pattern array based on a plurality of fit lines.

In certain embodiments, the processor 22 in the semiconductor processing apparatus 20 may be used to implement step 041 and step 042.

In step 041, according to the first reference line, the size of the feature pattern and the positions of the feature points, the fitting line of the arrangement of the feature points is obtained, if the deflection angle of the feature pattern array is identified only by calculating the inclination angle of the first reference line, the randomness is larger, the distribution information of the rest feature points is not fully utilized, and the position information of the feature points is fully utilized in the step, so that the deflection angle of the feature pattern array can be better represented by the fitting lines. The size of the feature pattern is known or calculated by an image recognition algorithm.

In step 042, the deflection angles of the feature pattern array are identified based on the plurality of fitting lines, so as to integrate the position information of all feature points, and obtain the deflection angles with higher accuracy.

Referring to FIG. 12, in some embodiments, step 041 includes the steps of:

0411: determining a first theoretical point on the first reference line according to the size of the feature pattern along a first direction by taking the first reference point as a starting point;

0412: respectively passing through each first theoretical point, and acquiring a straight line which forms a preset angle with the first datum line so as to acquire a first theoretical line extending along the second direction;

0413: acquiring a plurality of characteristic points which are collinear along a second direction as first common line characteristic points according to the position relation between the characteristic points and a first theoretical line; and

0414: Fitting the first common line characteristic points to obtain a first fitting line.

Referring to fig. 12 and 13, in some embodiments, the first obtaining unit 141 includes a first determining subunit 1411, a first obtaining subunit 1412, a second obtaining subunit 1413, and a first fitting subunit 1414. The first determining subunit 1411 may be configured to implement step 0411, i.e., the first determining subunit 1411 may be configured to determine, in the first direction, a first theoretical point that exists on the first reference line, based on the size of the feature pattern, starting at the first reference point. The first obtaining subunit 1412 may be configured to perform step 0412, i.e., the first obtaining subunit 1412 may be configured to obtain a straight line at a preset angle with respect to the first reference line through each first theoretical point, so as to obtain a first theoretical line extending along the second direction. The second obtaining subunit 1413 may be configured to implement step 0413, i.e., the second obtaining subunit 1413 may be configured to obtain a plurality of feature points that are collinear along the second direction as first common line feature points according to a positional relationship between the feature points and the first theoretical line. The first fitting subunit 1414 may be configured to implement step 0414, i.e., the first fitting subunit 1414 may be configured to fit the first common line feature points to obtain a first fit line.

In certain embodiments, processor 22 in semiconductor processing apparatus 20 may be used to implement step 0411, step 0412, step 0413, and step 0414.

In step 0411, a first theoretical point on the first reference line is determined along a first direction, starting with the first reference point, according to the size of the feature pattern. The direction in which the first reference line extends is the first direction, and theoretically, there are a plurality of feature points on the first reference line, and the distance between two adjacent feature points on the first reference line should be related to the size of the feature pattern in the first direction. Thus, a first theoretical point may be determined along a first direction starting at a first reference point and along a first direction for every other feature pattern. It should be noted that the first direction includes a positive direction and a negative direction, and there may be a first theoretical point on both sides of the first reference point. In the example shown in fig. 14, for convenience of illustration, feature points other than the first reference point D1 are omitted in fig. 14, and only the first reference point D1 and the theoretical point (the hollow point in fig. 14) are left, and one first theoretical point on the first reference line L1, such as the first theoretical points D6 and D7, can be determined every size (the short side of the rectangle in the example of fig. 14) of one feature pattern with the first reference point D1 as the starting point.

In step 0412, a straight line at a predetermined angle to the first reference line is obtained through each first theoretical point, so as to obtain a first theoretical line extending along the second direction. It will be appreciated that there may also be a large number of feature points in the feature pattern array that are not near the first reference line, the positional information of which can also be used to identify the angle of deflection of the feature pattern array. The step starts from a first theoretical point, and a first theoretical line extending along a second direction is obtained, so that the characteristic points near the first theoretical line can be searched for later. The preset angle may be set according to a shape of the feature pattern, for example, when the feature pattern is a polygon, the preset angle may be an angle formed between two adjacent sides of the feature pattern. In the example shown in fig. 14, the feature pattern is substantially rectangular, and the preset angle is 90 degrees, and a first theoretical line may be obtained through each first theoretical point, for example, through the first theoretical point D6, and a first theoretical line L2 may be obtained.

In step 0413, a plurality of feature points collinear along the second direction are obtained as first collinear feature points according to the positional relationship between the feature points and the first theoretical line. The inclination angle of the first theoretical line is determined by the preset angle and the inclination angle of the first reference line, and since the information of the characteristic points is less in the process of obtaining the first theoretical line, the deflection angle of the characteristic pattern array is not suitable to be calculated by the first theoretical line directly, however, some characteristic points may exist near the first theoretical line, that is, the first common line characteristic points should be collinear in the second direction in theory, and the first common line characteristic points may not be strictly collinear in the second direction due to practical process and other reasons, so that the practical arrangement direction of the first common line characteristic points is convenient to calculate after the first common line characteristic points are searched. In the example shown in fig. 15, only the first theoretical line L2 passing through the first theoretical point D6 is shown in fig. 15, and by implementing step 0413, a plurality of first common line feature points (solid points in fig. 15) that are in the vicinity of the first theoretical line L2 and are theoretically collinear can be obtained. It will be appreciated that from each of the first theoretical lines in fig. 14, a set of first theoretical collinear feature points may be obtained.

In step 0414, the first co-line feature points are fitted to obtain a first fitted line. As mentioned above, the arrangement angle of the theoretically collinear first co-linear feature points can be used to reflect the deflection angle of the feature pattern array, so that the first fitting line obtained by fitting the first co-linear feature points can be used to calculate the deflection angle of the feature pattern array. As shown in the example of fig. 16, fitting a plurality of first common line feature points (solid points in fig. 16) may result in one first fitting line L3, the inclination angle of the first fitting line L3 may be different from that of the first theoretical line L2, and the first fitting line L3 may more accurately reflect the deflection angle of the feature pattern array. Of course, the number of total first fit lines obtained should be the same as the number of first theoretical lines.

Referring to fig. 17, in some embodiments, step 0413 includes the steps of:

04131: determining a second theoretical point on the first theoretical line along a second direction by taking the first theoretical point as a starting point according to the size of the characteristic pattern; and

04132: And searching one feature point closest to each second theoretical point as a first common line feature point.

Referring to fig. 17 and 18, in some embodiments, the second obtaining subunit 1413 includes a first determining grandchild unit 14131 and a first searching grandchild unit 14132. The first determining grandchild unit 14131 may be configured to implement step 04131, i.e., the first determining grandchild unit 14131 may be configured to determine, in the second direction, a second theoretical point that exists on the first theoretical line based on the size of the feature pattern, starting at the first theoretical point. The first search grandchild unit 14132 may be configured to implement step 04132, i.e., the first search grandchild unit 14132 may be configured to search for a feature point closest to each of the second theoretical points as the first common line feature point.

In certain embodiments, the processor 22 in the semiconductor processing apparatus 20 may also be used to implement steps 04131 and 04132.

In step 04131, a second theoretical point present on the first theoretical line is determined based on the size of the feature pattern along the second direction, starting with the first theoretical point. The direction in which the first theoretical line extends is the second direction, and theoretically, there are a plurality of feature points on the first theoretical line, and the distance between two adjacent feature points on the first theoretical line should be related to the dimension of the feature pattern in the second direction. Thus, a second theoretical point may be determined along the second direction starting from the first theoretical point, along the second direction, for every other feature pattern. It should be noted that the second direction includes a positive direction and a negative direction, and there may be a second theoretical point on both sides of the first theoretical point. In the example shown in fig. 15, a second theoretical point on the first theoretical line, such as second theoretical points D8 and D9, is determined every size of one feature pattern (long side of rectangle in the example of fig. 14) starting from the first theoretical point D6.

In step 04132, one feature point closest to each second theoretical point is searched as a first common line feature point. In an ideal situation, there should be a corresponding feature point at the position of each second theoretical point, and as mentioned above, in reality, the feature point may not be strictly located at the position of the second theoretical point, but there may be a feature point corresponding to the second theoretical point near each second theoretical point, by calculating the distances between the second theoretical point and all the feature points, the feature point closest to the second theoretical point is the feature point corresponding to the second theoretical point, and a plurality of feature points corresponding to a plurality of second theoretical points on the same first theoretical line are the first common line feature points. Taking fig. 15 as an example, among the plurality of feature points, one feature point closest to the second theoretical point D8 may be searched for as the first common line feature point D10, and one feature point closest to the second theoretical point D9 may be searched for as the first common line feature point D11.

Referring to FIG. 19, in some embodiments, step 041 includes the steps of:

0415: the first datum point is penetrated, a straight line which forms a preset angle with the first datum line is obtained, and a second datum line which extends along a second direction is obtained;

0416: determining a second theoretical point on the second reference line according to the size of the feature pattern along the second direction by taking the first reference point as a starting point;

0417: respectively passing through each second theoretical point, and acquiring a straight line which forms a preset angle with a second datum line so as to acquire a second theoretical line extending along the first direction;

0418: acquiring a plurality of characteristic points which are collinear along the first direction as second collinear characteristic points according to the position relation between the characteristic points and the second theoretical line; and

0419: Fitting the second collinear feature points to obtain a second fit line.

Referring to fig. 19 and 20, in some embodiments, the first obtaining unit 141 includes a third obtaining subunit 1415, a second determining subunit 1416, a fourth obtaining subunit 1417, a fifth obtaining subunit 1418, and a second fitting subunit 1419. The third acquiring subunit 1415 may be configured to perform step 0415, i.e., the third acquiring subunit 1415 may be configured to pass through the first reference point and acquire a line at a predetermined angle with respect to the first reference line to acquire a second reference line extending in the second direction. The second determining subunit 1416 may be configured to implement step 0416, i.e., the second determining subunit 1416 may be configured to determine, in the second direction, a second theoretical point present on the second reference line based on the size of the feature pattern, starting at the first reference point. The fourth acquiring subunit 1417 may be configured to perform step 0417, i.e., the fourth acquiring subunit 1417 may be configured to respectively pass through each of the second theoretical points to acquire a straight line at a predetermined angle with respect to the second reference line, so as to acquire a second theoretical line extending along the first direction. The fifth acquiring subunit 1418 may be configured to perform step 0418, i.e., the fifth acquiring subunit 1418 may be configured to acquire the plurality of feature points that are collinear along the first direction as second collinear feature points according to the positional relationship between the feature points and the second theoretical line. The second fitting subunit 1419 may be used to implement step 0419, i.e., the second fitting subunit 1419 may be used to fit the second collinear feature points to obtain a second fit line.

In certain embodiments, processor 22 of semiconductor processing apparatus 20 may also be used to implement step 0415, step 0416, step 0417, step 0418, step 0419.

In step 0415, a straight line at a predetermined angle to the first reference line is obtained through the first reference point to obtain a second reference line extending along the second direction. Specifically, the manner of obtaining the second reference line may be similar to that of obtaining the first theoretical line, and will not be described herein. In the example shown in fig. 14, a second reference line L4 is acquired through the first reference point D1, the second reference line L4 extending in the second direction.

In step 0416, a second theoretical point present on the second fiducial line is determined in the second direction, starting with the first fiducial point, based on the size of the feature pattern. Specifically, determining the second theoretical point existing on the second reference line is similar to determining the second theoretical point existing on the first theoretical line, and will not be described herein. Referring to the example shown in fig. 14, the second theoretical point D12 is one of the second theoretical points existing on the second reference line.

In step 0417, a straight line at a predetermined angle to the second reference line is obtained through each second theoretical point, so as to obtain a second theoretical line extending along the first direction. For each second theoretical point on the second reference line, a second theoretical line extending along the first direction may be obtained, which may be used for subsequent searching of feature points in the vicinity of the second theoretical line. In the example shown in fig. 14, a second theoretical line L5 may be obtained through the second theoretical point D12.

In step 0418, a plurality of feature points that are collinear along the first direction are acquired as second collinear feature points according to the positional relationship between the feature points and the second theoretical line. The inclination angle of the second theoretical line is determined by the preset angle and the inclination angle of the second reference line, and because the information of the characteristic points is less in the process of obtaining the second theoretical line, the deflection angle of the characteristic pattern array is not suitable to be calculated by the second theoretical line directly, however, some characteristic points may exist near the second theoretical line, that is, the second collinear characteristic points should be collinear in the first direction in theory, and the second collinear characteristic points may not be strictly collinear in the first direction due to practical process and other reasons, so that the practical arrangement direction of the second collinear characteristic points is convenient to calculate after the second collinear characteristic points are searched. It should be noted that the second collinear feature point obtained in this step may also be the first collinear feature point obtained in step 0413, that is, the same feature point may be used as both the first collinear feature point and the second characteristic point. In the example shown in fig. 21, only the second theoretical line L5 passing through the second theoretical point D12 is shown in fig. 21, and by implementing step 0418, a plurality of second collinear feature points (solid points in fig. 21) that are in the vicinity of the second theoretical line L5 and that are theoretically collinear can be acquired. It will be appreciated that from each of the second theoretical lines in fig. 14, a set of second collinear feature points that are theoretically collinear may be obtained.

In step 0419, the second collinear feature points are fitted to obtain a second fitted line. As mentioned above, the arrangement angle of the second co-linear feature points, which are theoretically co-linear, can be used to reflect the deflection angle of the feature pattern array, and therefore, the second fitting line obtained by fitting the second co-linear feature points can be used to calculate the deflection angle of the feature pattern array. As shown in the example of fig. 22, fitting a plurality of second collinear feature points (solid points in fig. 22) may result in one second fitting line L6, the inclination angle of the second fitting line L6 may be different from that of the second theoretical line L5, and the second fitting line L6 may more accurately reflect the deflection angle of the feature pattern array. Of course, the total number of resulting second fit lines should be the same as the number of second theoretical lines.

Referring to FIG. 23, in some embodiments, step 0418 includes the steps of:

04181: determining a third theoretical point on the second theoretical line according to the size of the characteristic pattern along the first direction by taking the second theoretical point as a starting point; and

04182: And searching one feature point closest to each third theoretical point as a second collinear feature point.

Referring to fig. 23 and 24, in some embodiments, the fifth acquiring subunit 1418 includes a second determining grandchild unit 14181 and a second searching grandchild unit 14182. The second determining grandchild unit 14181 may be configured to implement step 04181, i.e., the second determining grandchild unit 14181 may be configured to determine, in the first direction, a third theoretical point that exists on the second theoretical line based on the size of the feature pattern, starting with the second theoretical point. The second search grandchild unit 14182 may be configured to search for one feature point closest to each third theoretical point as the second collinear feature point.

In certain embodiments, the processor 22 in the semiconductor processing apparatus 20 may be used to implement steps 04181 and 04182.

In step 04181, a third theoretical point present on the second theoretical line is determined along the first direction, starting with the second theoretical point, based on the size of the feature pattern. The direction in which the second theoretical line extends is the first direction, and theoretically, there are a plurality of feature points on the second theoretical line, and the distance between two adjacent feature points on the second theoretical line should be related to the size of the feature pattern in the first direction. Thus, a third theoretical point may be determined along the first direction starting at the second theoretical point and along the first direction for every other feature pattern. It should be noted that the first direction includes positive and negative directions, and a third theoretical point may exist on both sides of the second theoretical point. In the example shown in fig. 21, a third theoretical point on the second theoretical line, such as third theoretical points D13 and D14, is determined every size of one feature pattern (short side of rectangle in the example of fig. 14) starting from the second theoretical point D12.

In step 04182, one feature point closest to each third theoretical point is searched as a second collinear feature point. In an ideal situation, there should be a corresponding feature point at the position of each third theoretical point, and as mentioned above, in reality, the feature point may not be strictly located at the position of the third theoretical point, but there may be a feature point corresponding to the third theoretical point near each third theoretical point, by calculating the distances between the third theoretical point and all the feature points, the feature point closest to the third theoretical point is the feature point corresponding to the third theoretical point, and the feature points corresponding to the third theoretical points on the same second theoretical line are the second collinear feature points. Taking the example shown in fig. 21 as an example, among the plurality of feature points, one feature point closest to the third theoretical point D13 may be searched for as the second collinear feature point D15, and one feature point closest to the third theoretical point D14 may be searched for as the second collinear feature point D16.

Referring to fig. 25, fig. 25 is a schematic diagram of a feature pattern array, in which solid points are feature points, first fitting lines are L3, and inclination angles of different first fitting lines L3 may be the same or different, and inclination angles of different second fitting lines L6 may be the same or different, so that a deflection angle of the feature pattern array can be more accurately calculated through the plurality of first fitting lines L3 and the plurality of second fitting lines L6. In one example, after fitting to obtain a plurality of first fit lines L3 and a plurality of second fit lines L6, the deflection angle may be calculated according to the plurality of first fit lines L3 and the plurality of second fit lines L6; in another example, the deflection angle may be calculated by fitting only the plurality of first fitting lines L3; in yet another example, the deflection angle may be calculated by fitting only the plurality of second fitting lines L6.

Referring to fig. 26, in some embodiments, step 042 includes the steps of:

0421: respectively calculating the angle difference between each of the plurality of second fitting lines and a preset angle; and

0422: An average value of the sum of the plurality of angle differences and the inclination angles of the plurality of first fitting lines is calculated as the deflection angle.

Referring to fig. 26 and 27, in some embodiments, the identification unit 142 includes a first computing subunit 1421 and a second computing subunit 1422. The first calculating subunit 1421 may be used to implement step 0421, i.e., the first calculating subunit 1421 may be used to calculate an angular difference between each of the plurality of second fit lines and the preset angle, respectively. The second calculation subunit 1422 may be used to implement step 0422, i.e., the second calculation subunit 1422 may be used to calculate an average of the sum of the plurality of angle differences and the inclination angles of the plurality of first fitting lines as the deflection angle.

In certain embodiments, the processor 22 in the semiconductor processing apparatus 20 may be configured to implement step 0421 and step 0422.

In step 0421, an angular difference between each of the plurality of second fit lines and the preset angle is calculated, respectively. As shown in fig. 28, the extending direction of the reference line L7 is one arrangement direction (for example, the longitudinal direction) of the plurality of feature patterns in the non-deflection feature pattern array, taking one second fitting line L6 as an example, the angle between the second fitting line L6 and the reference line L7 is the angle a, and since the reference line (for example, the transverse reference line) corresponding to the second fitting line L6 is the preset angle, the difference between the angle a and the preset angle needs to be calculated to obtain the deflection angle of the feature pattern reflected by the second fitting line L6. By calculating the angle differences between the plurality of second fitting lines and the preset angle, a plurality of angle differences can be obtained.

In step 0422, an average of the sum of the plurality of angle differences and the inclination angles of the plurality of first fitting lines is calculated as the deflection angle. Specifically, referring to fig. 28, the included angle between the first fitting line L3 and the reference line L7 is an angle B, and the angle B is an inclination angle of the first fitting line L3. It will be appreciated that a plurality of first fitting lines may then result in a plurality of inclination angles. And (3) adding the angle difference obtained by calculating all the second fitting lines and the inclination angles of all the first fitting lines, and dividing the sum by the sum of the number of all the second fitting lines and the number of the first fitting lines, namely obtaining an average value. The average value reduces the influence of individual fluctuation of a certain fitting line (a first fitting line or a second fitting line) on the summary result, and the deflection angle of the whole characteristic pattern array can be better reflected.

Referring to fig. 29, an embodiment of the present application further discloses a non-volatile computer readable storage medium 30, where the computer readable storage medium 30 stores a computer program 31, which when executed by one or more processors 40 causes the processors 40 to perform the identification method according to any embodiment of the present application.

For example, when processor 40 executes computer program 31, processor 40 executes steps 01, 02, 03, 04, 021, 022, 023, 041, 042, 0411, 0412, 0413, 0414, 04131, 04132, 0415, 0416, 0417, 0418, 0419, 04181, 04182, 0421, and 0422 described above.

In summary, in the identification method, the identification apparatus 10, the semiconductor processing device 20 and the computer readable storage medium according to the embodiments of the present application, a first reference line is obtained by selecting a first reference point from the feature points at known positions and fitting the first reference point to one or more fitting points, where the first reference line reflects the deflection angle information of the feature pattern array, and the deflection angle of the feature pattern array can be identified according to the first reference line, so as to determine the deflection angle of the workpiece 100 with the feature pattern.

In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.

Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and further implementations are included within the scope of the preferred embodiment of the present application in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the present application.

While embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the application.

Claims (9)

1. A method of identifying a deflection angle of an array of feature patterns, each of the feature patterns comprising feature points having known positions, the method comprising:

Selecting a characteristic point as a first datum point;

Searching one or more characteristic points collinear with the first datum point as fitting points;

fitting the first reference point and the fitting point to obtain a first reference line extending along a first direction;

According to the first datum line, the size of the characteristic pattern and the positions of a plurality of characteristic points, a first fitting line for arranging the characteristic points is obtained, and the method comprises the following steps: determining a first theoretical point on the first reference line along the first direction by taking the first reference point as a starting point according to the size of the characteristic pattern; respectively passing through each first theoretical point, and acquiring a straight line which forms a preset angle with the first datum line so as to acquire a first theoretical line extending along a second direction; determining a second theoretical point on the first theoretical line according to the size of the characteristic pattern along the second direction by taking the first theoretical point as a starting point; searching a feature point closest to each second theoretical point existing on the first theoretical line as a first common line feature point; fitting the first common line characteristic points to obtain a first fitting line; the characteristic pattern is polygonal, and the preset angle is an angle formed between two adjacent sides of the characteristic pattern; and

A deflection angle of the feature pattern array is identified based on a plurality of the first fit lines.

2. A method of identifying a deflection angle of an array of feature patterns, each of the feature patterns comprising feature points having known positions, the method comprising:

Selecting a characteristic point as a first datum point;

Searching one or more characteristic points collinear with the first datum point as fitting points;

fitting the first reference point and the fitting point to obtain a first reference line extending along a first direction;

Obtaining a second fitting line with a plurality of feature points arranged according to the first datum line, the size of the feature pattern and the positions of the feature points, wherein the second fitting line comprises the following components: through the first datum point, a straight line which forms a preset angle with the first datum line is obtained, so that a second datum line extending along a second direction is obtained; determining a second theoretical point on the second reference line according to the size of the characteristic pattern along the second direction by taking the first reference point as a starting point; respectively passing through each second theoretical point on the second datum line to acquire a straight line which forms the preset angle with the second datum line so as to acquire a second theoretical line extending along the first direction; determining a third theoretical point on the second theoretical line according to the size of the characteristic pattern along the first direction by taking the second theoretical point on the second reference line as a starting point; searching a feature point closest to each third theoretical point as a second collinear feature point; fitting the second collinear characteristic points to obtain a second fitting line; the characteristic pattern is polygonal, and the preset angle is an angle formed between two adjacent sides of the characteristic pattern; and

A deflection angle of the feature pattern array is identified based on a plurality of the second fit lines.

3. A method of identifying a deflection angle of an array of feature patterns, each of the feature patterns comprising feature points having known positions, the method comprising:

Selecting a characteristic point as a first datum point;

Searching one or more characteristic points collinear with the first datum point as fitting points;

fitting the first reference point and the fitting point to obtain a first reference line extending along a first direction;

Obtaining a fitting line of the arrangement of the plurality of feature points according to the first datum line, the size of the feature pattern and the positions of the plurality of feature points, wherein the fitting line comprises the following components: determining a first theoretical point on the first reference line along the first direction by taking the first reference point as a starting point according to the size of the characteristic pattern; respectively passing through each first theoretical point, and acquiring a straight line which forms a preset angle with the first datum line so as to acquire a first theoretical line extending along a second direction; determining a second theoretical point on the first theoretical line according to the size of the characteristic pattern along the second direction by taking the first theoretical point as a starting point; searching a feature point closest to each second theoretical point existing on the first theoretical line as a first common line feature point; fitting the first common line characteristic points to obtain a first fitting line;

Through the first datum point, a straight line which forms a preset angle with the first datum line is obtained, so that a second datum line extending along a second direction is obtained; determining a second theoretical point on the second reference line according to the size of the characteristic pattern along the second direction by taking the first reference point as a starting point; respectively passing through each second theoretical point on the second datum line to acquire a straight line which forms the preset angle with the second datum line so as to acquire a second theoretical line extending along the first direction; determining a third theoretical point on the second theoretical line according to the size of the characteristic pattern along the first direction by taking the second theoretical point on the second reference line as a starting point; searching a feature point closest to each third theoretical point as a second collinear feature point; fitting the second collinear characteristic points to obtain a second fitting line; the characteristic pattern is polygonal, and the preset angle is an angle formed between two adjacent sides of the characteristic pattern; and

A deflection angle of the feature pattern array is identified based on a plurality of the fit lines, the plurality of fit lines including a plurality of the first fit lines and a plurality of the second fit lines.

4. A method of identifying as in claim 1, 2 or 3, wherein the searching for one or more feature points collinear with the first reference point as fitting points comprises:

Searching for a characteristic point within a preset distance threshold from the first datum point;

if the number of the searched feature points is two, the two searched feature points are used as the fitting points; and

If the number of the searched feature points is greater than or equal to four, any two feature points which are opposite to each other are used as the fitting points in the four points which are closest to the first datum point.

5. The method of claim 4, wherein the feature pattern is rectangular, the feature pattern comprising long sides and short sides;

The range of the distance threshold value is larger than the length of the short side and smaller than the length of the long side; or (b)

The ratio of the distance threshold to the length of the short side ranges from greater than 1 to less than 1.5.

6. A method of identifying as in claim 3, wherein the identifying the deflection angle of the feature pattern array based on a plurality of the fit lines comprises:

calculating the included angle between each second fitting line of the second fitting lines and a reference line respectively to obtain a plurality of included angle angles, and calculating the angle difference between the plurality of included angle angles and the preset angle respectively to obtain a plurality of angle differences, wherein the reference line indicates one arrangement direction of a plurality of characteristic patterns in the non-deflection characteristic pattern array; and

And calculating an average value of a sum of a plurality of angle differences and the inclination angles of a plurality of first fitting lines as the deflection angle, wherein the inclination angle of the first fitting lines represents an included angle between the first fitting lines and the datum line.

7. An identification device for identifying a deflection angle of an array of feature patterns, each of the feature patterns comprising feature points having known positions, the identification device comprising:

the selecting module is used for selecting one characteristic point as a first datum point;

a search module searching for one or more feature points collinear with the first reference point as fitting points;

The fitting module is used for fitting the first datum point and the fitting point to obtain a first datum line extending along a first direction;

The identification module is used for acquiring a fitting line with a plurality of characteristic points arranged based on the first datum line, the size of the characteristic pattern and the positions of the characteristic points; and identifying a deflection angle of the feature pattern array based on a plurality of the fitted lines;

According to the first datum line, the size of the characteristic pattern and the positions of the characteristic points, the fitting line for arranging the characteristic points is obtained, and the fitting line comprises the following steps:

determining a first theoretical point on the first reference line along the first direction by taking the first reference point as a starting point according to the size of the characteristic pattern; respectively passing through each first theoretical point, and acquiring a straight line which forms a preset angle with the first datum line so as to acquire a first theoretical line extending along a second direction; determining a second theoretical point on the first theoretical line according to the size of the characteristic pattern along the second direction by taking the first theoretical point as a starting point; searching a feature point closest to each second theoretical point existing on the first theoretical line as a first common line feature point; fitting the first common line characteristic points to obtain a first fitting line; and/or

Through the first datum point, a straight line which forms a preset angle with the first datum line is obtained, so that a second datum line extending along a second direction is obtained; determining a second theoretical point on the second reference line according to the size of the characteristic pattern along the second direction by taking the first reference point as a starting point; respectively passing through each second theoretical point on the second datum line to acquire a straight line which forms the preset angle with the second datum line so as to acquire a second theoretical line extending along the first direction; determining a third theoretical point on the second theoretical line according to the size of the characteristic pattern along the first direction by taking the second theoretical point on the second reference line as a starting point; searching a feature point closest to each third theoretical point as a second collinear feature point; fitting the second collinear characteristic points to obtain a second fitting line;

The characteristic pattern is polygonal, and the preset angle is an angle formed between two adjacent sides of the characteristic pattern.

8. A semiconductor processing apparatus, the semiconductor processing apparatus comprising:

A memory storing an array of feature patterns and a location of a feature point of each of the feature patterns; and

A processor for performing the identification method of any one of claims 1 to 6.

9. A non-transitory computer readable storage medium storing a computer program which, when executed by one or more processors, causes the processors to perform the identification method of any of claims 1 to 6.