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CN113376427A - IGBT module, inverter and electronic equipment - Google Patents

IGBT module, inverter and electronic equipment Download PDF

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Publication number
CN113376427A
CN113376427A CN202110854216.4A CN202110854216A CN113376427A CN 113376427 A CN113376427 A CN 113376427A CN 202110854216 A CN202110854216 A CN 202110854216A CN 113376427 A CN113376427 A CN 113376427A
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CN
China
Prior art keywords
current
copper bar
igbt
phase output
igbt module
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Granted
Application number
CN202110854216.4A
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Chinese (zh)
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CN113376427B (en
Inventor
马志国
陶青
张庆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saic Infineon Automotive Power Semiconductor Shanghai Co ltd
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Saic Infineon Automotive Power Semiconductor Shanghai Co ltd
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Priority to CN202110854216.4A priority Critical patent/CN113376427B/en
Publication of CN113376427A publication Critical patent/CN113376427A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/44Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inverter Devices (AREA)

Abstract

The application relates to an IGBT module, an inverter and electronic equipment, and belongs to the technical field of integrated circuits. The IGBT module comprises: sensor copper bar subassembly, sensor copper bar subassembly includes: the phase output copper bar comprises a phase output copper bar and a current sensor plate, wherein the current sensor plate is arranged on the phase output copper bar and used for detecting the output current of a phase line of the phase output copper bar. In the embodiment of the application, through set up the current sensor board that has the current detection function on the output copper bar of looks, detect the output current of the phase line of the output copper bar of looks to make the IGBT module possess the current detection function, thereby solved the current inconvenient problem of current that has detected the IGBT template.

Description

IGBT module, inverter and electronic equipment
Technical Field
The application belongs to the technical field of integrated circuits, and particularly relates to an IGBT module, an inverter and electronic equipment.
Background
In an electric vehicle, motor drive control is a very complex power electronic control system involving an inverter containing Insulated Gate Bipolar Transistor (IGBT) modules. The current IGBT module is low in integration degree and does not have a current detection function. When the output current of the IGBT module needs to be detected, the current divider is integrated on a double-sided Copper-clad ceramic substrate (DCB) of the IGBT module in the conventional manner, but because the DCB has a limited size and space, the added current divider has low power, can only detect a small current, and is not suitable for large-current detection application.
Disclosure of Invention
In view of the above, an object of the present invention is to provide an IGBT module, an inverter, and an electronic device, so as to solve the problem of current difficulty of the IGBT module in the prior art.
The embodiment of the application is realized as follows:
in a first aspect, an embodiment of the present application provides an IGBT module, including: sensor copper bar subassembly, sensor copper bar subassembly includes: the phase output copper bar comprises a phase output copper bar and a current sensor plate, wherein the current sensor plate is arranged on the phase output copper bar and used for detecting the output current of a phase line of the phase output copper bar. In the embodiment of the application, through set up the current sensor board that has the current detection function on the output copper bar of looks, detect the output current of the phase line of the output copper bar of looks to make the IGBT module possess the current detection function, thereby solved the current inconvenient problem of current that has detected the IGBT template.
In combination with one possible implementation manner of the embodiment of the first aspect, the current sensor board includes: the device comprises a circuit board, a tunnel magnetic current detection chip and a connector; the first part of the circuit board is overlapped with the phase output copper bar, and the second part of the circuit board exceeds the phase output copper bar; the tunnel magnetic current detection chip is arranged on the circuit board, and one part of the tunnel magnetic current detection chip is positioned on the first part and is used for detecting the output current of the phase line of the phase output copper bar; the connector is connected with the output end of the current detection chip and used for outputting the output current. In the embodiment of the application, adopt tunnel magnetic current to detect the output current of the phase line of looks output copper bar, because tunnel magnetic current detects the size of chip and for present hall formula, flux gate-type, giant magnetoresistance formula current sensor, can be little a lot to the realization realizes possessing the current detection function under not changing the biggest overall dimension of IGBT.
With reference to one possible implementation manner of the embodiment of the first aspect, the tunneling magnetic current detection chip includes: the device comprises a first tunnel magnetic current induction element, a second tunnel magnetic current induction element and a differential amplification circuit; the first tunnel magnetic current induction element is arranged at the first part, the induction direction of the first tunnel magnetic current induction element is vertical to the current direction of the phase output copper bar, and the first tunnel magnetic current induction element is used for inducing a magnetic field generated by the current of the phase output copper bar and generating a first current; a second tunnel magnetic current sensing element disposed at the second portion, and having an induction direction identical to that of the first tunnel magnetic current sensing element, the second tunnel magnetic current sensing element being configured to induce an external interference magnetic field and generate a second current; and the differential amplification circuit is respectively connected with the first tunnel magnetic current induction element and the second tunnel magnetic current induction element, and is used for outputting the output current based on the first current and the second current. In the embodiment of the application, through setting up first tunnel magnetic current induction element and second tunnel magnetic current induction element in the different positions of looks output copper bar to this adjusts the SNR, and realizes the shielding to great magnetic field interference through differential amplifier, thereby need not additionally apply the magnetic shield cover and just can realize fine shielding effect, can reduce the volume and the cost of sensor.
With reference to one possible implementation manner of the embodiment of the first aspect, the current sensor board is fixed on the phase output copper bar through an insulating member. In the embodiment of the application, the current sensor board is fixed through the insulating piece to realize insulation, so that electromagnetic interference is reduced.
With reference to one possible implementation manner of the embodiment of the first aspect, the phase output copper bar includes: a first connection hole and a second connection hole; the first part of the current sensor board is located between the first connecting hole and the second connecting hole, and the second part of the current sensor board exceeds the phase output copper bar. In this application embodiment, through arranging the current sensor board in between the first connecting hole and the second connecting hole of looks output copper bar, also arrange the central point of looks output copper bar in and put, can detect the output current of phase line better.
With reference to one possible implementation manner of the first aspect, the IGBT module further includes an IGBT housing, and the sensor copper bar assembly and the IGBT housing are plastically packaged to form the IGBT housing with a current detection function. In the embodiment of the application, through carrying out the plastic envelope with sensor copper bar subassembly and IGBT shell, form an IGBT shell that has the current detection function, strengthened the stability of sensor copper bar subassembly, can further reduce electromagnetic interference.
With reference to one possible implementation manner of the embodiment of the first aspect, the IGBT module further includes: a double-sided copper-clad ceramic substrate; and the IGBT shell with the current detection function is welded on the double-sided copper-clad ceramic substrate.
With reference to one possible implementation manner of the embodiment of the first aspect, the IGBT module further includes: an IGBT chip; the IGBT chip is positioned in the IGBT shell with the current detection function, is fixed on the double-sided copper-clad ceramic substrate and is electrically connected with the phase output copper bar. In this application embodiment, through being connected output copper bar electricity and IGBT chip to the realization that can be very convenient is to the measuring of the electric current of IGBT chip.
In a second aspect, embodiments of the present application further provide an inverter, including: a body and an IGBT module as provided in the embodiments of the first aspect and/or in connection with any one of the possible implementations of the embodiments of the first aspect.
In a third aspect, an embodiment of the present application further provides an electronic device, including: a body and an inverter as provided in the embodiment of the second aspect described above.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the embodiments of the application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts. The foregoing and other objects, features and advantages of the application will be apparent from the accompanying drawings. Like reference numerals refer to like parts throughout the drawings. The drawings are not intended to be to scale as practical, emphasis instead being placed upon illustrating the subject matter of the present application.
Fig. 1 shows a schematic top view of a sensor copper bar assembly in an IGBT module according to an embodiment of the present application.
Fig. 2 shows a schematic side view of a sensor copper bar assembly in an IGBT module according to an embodiment of the present application.
Fig. 3 shows a schematic structural diagram of an IGBT module provided by the embodiment of the present application after a sensor copper bar assembly and an IGBT housing are molded.
Fig. 4 shows a schematic structural diagram of welding of an IGBT housing with a current sensor detection function and a DCB with an IGBT chip according to an embodiment of the present application.
Description of the drawings: 1-a sensor copper bar assembly; 11-phase output copper bar; 111-a first connection aperture; 112-second connection hole; 13-a current sensor board; 131-a circuit board; 132-a connector; 133-current detection chip; 15-an insulator; 2-an IGBT housing; 3-IGBT chip.
Detailed Description
The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, relational terms such as "first," "second," and the like may be used solely in the description herein to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
In the description of the present application, it is further noted that, unless expressly stated or limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Further, the term "and/or" in the present application is only one kind of association relationship describing the associated object, and means that three kinds of relationships may exist, for example, a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone.
In view of the fact that the existing IGBT (insulated Gate Bipolar transistor) module is low in integration degree and does not have a current detection function, when current detection is performed, a current divider can only be integrated on a double-sided Copper-clad ceramic substrate (DCB) of the IGBT module, but because the DCB is limited in size and space, the added current divider is low in power, only low current can be tested, and the current divider is not suitable for high-current detection application.
Therefore, the embodiment of the application provides an IGBT module with a current detection function to solve the problems that the existing current detection method needs to additionally integrate a shunt on a DCB and is not suitable for large current detection application. The IGBT module includes: the sensor copper bar assembly 1 is shown in figure 1. Sensor copper bar subassembly 1 includes: a phase output copper bar 11 and a current sensor plate 13. The current sensor board 13 is disposed on the phase output copper bar 11, and the current sensor board 13 is used for detecting an output current of a phase line of the phase output copper bar 11. The IGBT module has a current detection function by the aid of the current sensor plate 13 on the phase output copper bar 11.
In one embodiment, the current sensor board 13 may be fixed on the phase output copper bar 11 by bonding, for example, the current sensor board 13 is fixed on the phase output copper bar 11 by the insulating member 15 to be insulated from each other, so as to form the sensor copper bar assembly 1. The insulating member 15 may be a film, a glue, or the like having an insulating effect, which is commonly used at present.
Wherein, the phase output copper bar 11 includes a first connection hole 111 and a second connection hole 112, and the diameter of the first connection hole 111 is smaller than that of the second connection hole 112. The first connection hole 111 is for connection with a device inside the IGBT module, and the second connection hole 112 is for connection with a device outside the IGBT module. The first portion of the current sensor plate 13 is located between the first connection hole 111 and the second connection hole 112, and the second portion of the current sensor plate 13 exceeds the phase output copper bar 11, that is, the first portion of the current sensor plate 13 overlaps the phase output copper bar 11, and the second portion of the current sensor plate 13 exceeds the phase output copper bar 11.
As shown in fig. 2, the current sensor board 13 includes: a wiring board 131, a connector 132, and a current detection chip 133. The connector 132 is connected to an output terminal of the current detection chip 133, and the connector 132 is used for outputting an output current detected by the current detection chip 133 to the outside. The connector 132 and the current detection chip 133 are both provided on the wiring board 131, and the wiring board 131 is provided on the phase output copper bar 11. In one embodiment, the circuit board 131 may be fixed on the phase output copper bar 11 by bonding, for example, the circuit board 131 is fixed on the phase output copper bar 11 by the insulating member 15. The first portion of the circuit board 131 is located between the first connection hole 111 and the second connection hole 112, and the second portion of the circuit board 131 exceeds the phase output copper bar 11, that is, the first portion of the circuit board 131 overlaps the phase output copper bar 11, and the second portion of the circuit board 131 exceeds the phase output copper bar 11.
The circuit board 131 may be a circuit board 131 commonly used at present, such as a PCB. Alternatively, the current detection chip 133 may be a Tunnel Magnetic Resistance (TMR) current detection chip, and the size of the TMR current detection chip is much smaller than that of the current hall type, fluxgate type, and giant magnetoresistance type current sensors, so as to achieve the current detection function without changing the maximum external size of the IGBT. The performance of the current sensor is determined by the TMR current detection chip, and the current within the range of +/-1000A can be detected according to the performance of the chip. The tunnel magnetic current detection chip is arranged on the circuit board 131, one part of the tunnel magnetic current detection chip is located at the first part and used for detecting the output current of the phase line of the phase output copper bar 11, and the other part of the tunnel magnetic current detection chip is located at the second part. Wherein, this TMR current detection chip includes: the device comprises a first tunnel magnetic current induction element, a second tunnel magnetic current induction element and a differential amplification circuit.
The first tunnel magnetic current induction element is arranged at the first part of the circuit board 131, and the induction direction of the first tunnel magnetic current induction element is perpendicular to the current direction of the phase output copper bar 11. The first tunnel magnetic current induction element is used for inducing a magnetic field generated by the current of the phase output copper bar 11 and generating a first current.
The second tunnel magnetic current sensor is disposed at the second portion of the circuit board 131, and the sensing direction of the second tunnel magnetic current sensor is the same as the sensing direction of the first tunnel magnetic current sensor. The second tunnel magnetic current induction element is used for inducing an external interference magnetic field and generating a second current.
The differential amplification circuit is respectively connected with the first tunnel magnetic current induction element and the second tunnel magnetic current induction element, and the differential amplification circuit is used for outputting output current without an external interference magnetic field based on first current induced by the first tunnel magnetic current induction element and second current induced by the second tunnel magnetic current induction element. The output current is the current obtained by subtracting the second current from the first current and then amplifying the first current and the second current.
The magnetic field generated by the current of the phase output copper bar 11 at the position of the second tunnel magnetic current sensing element is at least several times (for example, 10 times) higher than the magnetic field generated by the current of the phase output copper bar 11 at the position of the first tunnel magnetic current sensing element, so that the current output by the differential amplification circuit can be ensured to be accurate.
The IGBT module further comprises an IGBT shell 2, the sensor copper bar assembly 1 and the IGBT shell 2 are subjected to plastic packaging to form the IGBT shell 2 with a current detection function, and the schematic diagram is shown in fig. 3. Wherein, the small black point framed by the dashed line frame in fig. 3 is the output end of the connector 132 in the sensor copper bar assembly 1.
The IGBT module further includes: and a double-sided copper-clad ceramic substrate (DCB), wherein the IGBT shell 2 with the current detection function is welded on the double-sided copper-clad ceramic substrate to form an IGBT module. And an IGBT chip 3 is also arranged on the double-sided copper-clad ceramic substrate, and the IGBT chip 3 is positioned in the IGBT shell 2 with the current detection function, is fixed on the double-sided copper-clad ceramic substrate and is electrically connected with the phase output copper bar 11.
The embodiment of the application also provides an inverter, which comprises an inverter body and the IGBT module. Among them, an inverter is used as a converter for converting a direct current into an alternating current of a specific frequency. The IGBT module is used as a power device in the inverter and is matched with the inverter body to complete the function of converting direct current into alternating current. The application of the IGBT module to the inverter is well known to those skilled in the art, and will not be further described herein to avoid redundancy.
The implementation principle and the generated technical effect of the IGBT module in the inverter provided by the embodiment of the present application are the same as those of the IGBT module embodiment described above, and for brief description, no mention is made in the inverter embodiment, and reference may be made to the corresponding contents in the IGBT module embodiment described above.
The embodiment of the application also provides electronic equipment which comprises a body and the inverter. For example, the body may include a power electronic control system, a motor, and the like. The power electronic control system is respectively connected with the motor and the inverter, and the inverter is connected with the motor. The power electronic control system may include devices such as a memory, a processor, etc. The electronic device includes, but is not limited to, an electric vehicle, and the like. The application of inverters in electric vehicles is common, and the principle thereof is well known to those skilled in the art, and will not be further described herein for avoiding redundancy.
The Memory is used for storing data, programs, and the like, and the Memory may be, but is not limited to, a Random Access Memory (RAM), a Read Only Memory (ROM), a Programmable Read-Only Memory (PROM), an Erasable Read-Only Memory (EPROM), an electrically Erasable Read-Only Memory (EEPROM), and the like.
The processor may be an integrated circuit chip having signal processing capabilities. The Processor may be a general-purpose Processor, including a Central Processing Unit (CPU), a Network Processor (NP), and the like; but also Digital Signal Processors (DSPs), Application Specific Integrated Circuits (ASICs), Field Programmable Gate Arrays (FPGAs) or other Programmable logic devices, discrete Gate or transistor logic devices, discrete hardware components. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. An IGBT module, characterized by comprising:
sensor copper bar subassembly, sensor copper bar subassembly includes:
phase output copper bars;
the current sensor board, the current sensor board set up in on the phase output copper bar, the current sensor board is used for detecting the output current of the phase line of phase output copper bar.
2. The IGBT module of claim 1, wherein the current sensor board comprises:
the first part of the circuit board is overlapped with the phase output copper bar, and the second part of the circuit board exceeds the phase output copper bar;
the tunnel magnetic current detection chip is arranged on the circuit board, and one part of the tunnel magnetic current detection chip is positioned on the first part and is used for detecting the output current of the phase line of the phase output copper bar;
and the connector is connected with the output end of the current detection chip and is used for outputting the output current.
3. The IGBT module of claim 2, wherein the tunneling magnetic current detection chip comprises:
the first tunnel magnetic current induction element is arranged at the first part, the induction direction of the first tunnel magnetic current induction element is vertical to the current direction of the phase output copper bar, and the first tunnel magnetic current induction element is used for inducing a magnetic field generated by the current of the phase output copper bar and generating a first current;
a second tunnel magnetic current sensing element disposed at the second portion, and having an induction direction identical to that of the first tunnel magnetic current sensing element, the second tunnel magnetic current sensing element being configured to induce an external interference magnetic field and generate a second current;
and the differential amplification circuit is respectively connected with the first tunnel magnetic current induction element and the second tunnel magnetic current induction element, and is used for outputting the output current based on the first current and the second current.
4. The IGBT module according to claim 1, wherein the current sensor board is fixed to the phase output copper bar by an insulator.
5. The IGBT module of claim 4, wherein the phase output copper bar comprises: a first connection hole and a second connection hole;
the first part of the current sensor board is located between the first connecting hole and the second connecting hole, and the second part of the current sensor board exceeds the phase output copper bar.
6. The IGBT module of claim 1, further comprising an IGBT housing,
and the sensor copper bar assembly and the IGBT shell are subjected to plastic package to form the IGBT shell with the current detection function.
7. The IGBT module of claim 6, further comprising: a double-sided copper-clad ceramic substrate;
and the IGBT shell with the current detection function is welded on the double-sided copper-clad ceramic substrate.
8. The IGBT module of claim 7, further comprising: an IGBT chip;
the IGBT chip is positioned in the IGBT shell with the current detection function, is fixed on the double-sided copper-clad ceramic substrate and is electrically connected with the phase output copper bar.
9. An inverter, comprising: a body and an IGBT module as claimed in any one of claims 1-8.
10. An electronic device, comprising: a body and an inverter as claimed in claim 9.
CN202110854216.4A 2021-07-27 2021-07-27 IGBT module, inverter and electronic equipment Active CN113376427B (en)

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