CN113341354A - Three-axis magnetic resistance magnetic field sensor and manufacturing method thereof - Google Patents
Three-axis magnetic resistance magnetic field sensor and manufacturing method thereof Download PDFInfo
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- CN113341354A CN113341354A CN202110474811.5A CN202110474811A CN113341354A CN 113341354 A CN113341354 A CN 113341354A CN 202110474811 A CN202110474811 A CN 202110474811A CN 113341354 A CN113341354 A CN 113341354A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
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- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
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Abstract
The invention discloses a three-axis magnetic resistance magnetic field sensor and a manufacturing method thereof, wherein the three-axis magnetic resistance magnetic field sensor comprises the following steps: the magnetic resistance sensing unit is connected with the lead connecting circuit; the magnetic resistance sensing unit further comprises a magnetic resistance unit and a sensing unit, wherein the magnetic resistance unit is made of a magnetic resistance film stack, and the sensing unit is composed of one or more magnetic resistance units. The invention has the advantages that: the single film stack is made into a triaxial sensor, and the cost is low. And synchronously photoetching and etching, and completing the device processing of the three-axis sensor by simple process steps. The later stage encapsulation is more convenient, and the reliability is strong, and encapsulates with low costs. The design has flexibility, and the sensitivity and the measuring range of the sensor can be easily designed according to different applications. The magnetic sensor has a simple structure and is easy to integrate.
Description
Technical Field
The invention relates to a three-axis magnetoresistive magnetic field sensor and a manufacturing method thereof, belonging to the field of magnetic electronic devices, in particular to the field of anisotropic magnetoresistive/spin Hall magnetoresistive (AMR/SMR) sensors for sensing magnetic fields.
Background
The magnetoresistance refers to the phenomenon that the resistance of a material changes under the action of an external magnetic field, and can convert various magnetic fields and the changed quantity thereof into electric signals to be output. Magnetic sensors can be used for detecting, storing, collecting, converting and monitoring various magnetic field information, become indispensable basic elements in information technology and information industry, and are widely applied to the fields of aerospace, automobiles, industry, consumption, military and the like. The sensor based on the magneto-resistance effect gradually enters the magnetic sensor market due to the characteristics of high sensitivity, small volume, low power consumption, easy integration and the like, wherein the magnetic sensor based on the anisotropic magneto-resistance (AMR) is applied in a large scale, and along with the wide application and popularization of the three-axis magnetic sensor in an electronic compass, an unmanned aerial vehicle, an intelligent watch and navigation equipment, the three-axis magnetic sensor bears the vital absolute pointing effect, and the development of a stable and reliable Z-axis sensor becomes an urgent need.
On one hand, in general three-axis sensors on the market today, a vertical Z-axis is usually used in combination with a horizontal XY-axis sensing structure. The sensor is packaged by adopting a plurality of chips, and a Z-axis magnetic sensor and an X-axis/Y-axis magnetic sensor which are vertically arranged are fixedly packaged together by routing or welding through a silver adhesive packaging material and a welding mode.
On the other hand, the current magneto-resistance sensor needs a certain magnetic bias technology to enable the device to work in a linear region and improve the sensitivity and the dynamic range, and the realization of corresponding magnetic bias involves a complex process or a film layer structure. The most commonly used magnetic biasing techniques are the soft magnetic adjacent layer (SAL) biasing technique and the babber electrode biasing technique.
Therefore, it is necessary to introduce a new method or principle to prepare a new magnetic sensor, to implement high-linearity and high-sensitivity signal output with a simple device structure, to promote miniaturization of the device, and to improve the integration of the device.
Disclosure of Invention
The invention aims to provide a three-axis magnetic resistance magnetic field sensor and a manufacturing method thereof, which are used for solving the problems that a vertical Z axis is fixed through routing or welding in the traditional scheme, the structure packaging is complex, the vertical Z axis is easy to break or loosen, the temperature influence is large and the like;
the invention also aims to provide a three-axis magnetic resistance magnetic field sensor and a manufacturing method thereof, so as to solve the problems of low transmittance of electromagnetic waves, high process difficulty, non-uniformity of edges and the like caused by large total thickness of the existing magnetic bias technology.
The technical scheme of the invention utilizes a heterostructure with vertical anisotropy, generates 45-degree bias of magnetic moment (in-plane magnetization direction) through current to realize maximum linear output, and realizes the detection of a three-axis magnetic field through a specific Wheatstone bridge structure.
The invention provides a three-axis magnetoresistive magnetic field sensor, comprising: the magnetic resistance sensing unit is connected with the lead connecting circuit; the magnetic resistance sensing unit is one or more magnetic resistance units, and the magnetic resistance units are made of magnetic resistance film stacks.
As shown in fig. 1, the magnetoresistive film stack includes: from bottom to top: a substrate, a spin generation layer, a ferromagnetic metal layer, and a capping layer;
wherein the spin generation layer is one of heavy metals such as Ta, W, Pt, Hf, Au, Hf, Mo and the like or Ti nonmagnetic metal; or the spin generation layer is Bi2Se3、Bi2Te3、Sb2Te3Or (Bi)xSb1-x)2Te3One kind of crystal film; or the spin generation layer is BixSe1-xPolycrystalline or amorphous thin films; or the spin generation layer is WTE2、MoTe2Or MoxW1-xTe2A monocrystalline, polycrystalline or amorphous outer ear semimetal film;
wherein the ferromagnetic metal layer is CoxFe1-x、(CoxFe1-x)1-yBy、Co、CoxNi1-xOr CoxPt1-xOne of (1);
wherein, the overburden is mainly: MgO and Al2Ox、SiO2、SiNXAnd the like.
The ferromagnetic metal layer has perpendicular anisotropy, which causes magnetic moments to be biased in different directions when currents of different directions or different magnitudes are applied, as shown in fig. 1.
Magnetoresistive sensing cell, such as Anisotropic Magnetoresistive (AMR) or Spin Magnetoresistive (SMR)All have perpendicular anisotropy. As shown in fig. 2(a) (b), the X-axis adopts a full wheatstone bridge configuration, the Y-axis adopts a full wheatstone bridge configuration, and the directions of the currents applied by the X-axis and the Y-axis are 90 °, wherein the direction of the current flowing through the magnetoresistive sensing units in the X-axis is opposite to that of Y or Y; the direction of current flowing through the magnetic resistance sensing unit in the Y axis is opposite to the X direction or the X direction; and the current directions of the magnetic resistance sensing unit 1 and the magnetic resistance sensing unit 4 are the same, and the current directions of the magnetic resistance sensing unit 2 and the magnetic resistance sensing unit 3 are the same, namely the current directions of two non-adjacent magnetic resistance sensing units are the same. For the Z-axis, a half wheatstone bridge configuration is employed, as in fig. 2(c), and the magnitude of the Z-axis signal is equal to the magnitude of the sensed magnetic field of the half wheatstone bridge configuration minus the outputs of one-half X-axis and one-half Y-axis, i.e.: vout Z＝Voutc-(Vouta+Voutb) And/2, no special requirement exists on the current flowing through the magnetoresistive sensing units in the half Wheatstone bridge structure.
The magnetoresistive sensing units may be etched to be circular, square or have a prolate shape (e.g., rectangle, hexagon and ellipse, etc. to facilitate the inclination of the magnetic moment of the ferromagnetic metal along the major axis), and current is to flow through each magnetoresistive sensing unit along the minor axis, as shown in fig. 3.
The bridge arms of the wheatstone bridge structure can be formed by one or more arrayed bridge arms. The array of multiple magneto-resistive sensing elements may improve the signal-to-noise ratio of the sensor depending on the required resistance value for the actual application.
The invention further provides a manufacturing method of the three-axis magnetic resistance sensor, which comprises the following steps:
s1, depositing a magnetoresistive film stack on the substrate, and annealing to enable the magnetoresistive film stack to have vertical anisotropy;
s2, patterning the magnetoresistive film stack by photoetching and etching processes, and etching the film stack to the substrate to obtain two groups of parallel shapes, such as round and rectangular shapes;
and S3, depositing a ferromagnetic metal layer, patterning to manufacture electrodes, connecting the magnetoresistive sensing units into a full Wheatstone bridge (an X axis and a Y axis), and simultaneously manufacturing another half Wheatstone bridge (a Z axis).
The invention discloses a triaxial magneto-resistive sensor and a manufacturing method thereof, and has the advantages that:
(1) the single film stack is made into a triaxial sensor, and the cost is low.
(2) And synchronously photoetching and etching, and completing the device processing of the three-axis sensor by simple process steps.
(3) The later stage encapsulation is more convenient, and the reliability is strong, and encapsulates with low costs.
(4) The design has flexibility, and the sensitivity and the measuring range of the sensor can be easily designed according to different applications.
(5) The magnetic sensor has a simple structure and is easy to integrate.
(6)
Drawings
FIG. 1 is a diagram illustrating a magnetoresistive film stack and a magnetic moment bias direction.
Fig. 2(a), (b), and (c) show X, Y, Z-axis circuit diagrams.
FIG. 3 shows the magnetoresistive sensing cell shape and current flow direction.
FIG. 4 is a block diagram of the method of the present invention.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
The invention provides a three-axis magnetoresistive magnetic field sensor, comprising: the magnetic resistance sensing unit is connected with the lead connecting circuit;
the magnetic resistance sensing unit is one or more magnetic resistance units, and the magnetic resistance units are made of magnetic resistance film stacks. As shown in fig. 1, the magnetoresistive film stack includes: from bottom to top: a substrate, a spin generation layer, a ferromagnetic metal layer, and a capping layer; the ferromagnetic metal layer has perpendicular anisotropy, and when currents in different directions or different magnitudes are applied, magnetic moments are biased to different directions.
Magnetoresistive sensing cells, such as Anisotropic Magnetoresistive (AMR) or Spin Magnetoresistive (SMR) sensing cells, all have perpendicular anisotropy. In FIGS. 2(a) (b), the X-axis employs a full Wheatstone bridge configuration, the Y-axis employs a full Wheatstone bridge configuration, and the X-and Y-axes apply electric powerThe flow direction is 90 degrees, wherein the current flowing through the magnetic resistance sensing unit in the X axis is along the direction opposite to Y or Y; the direction of current flowing through the magnetic resistance sensing unit in the Y axis is opposite to the X direction or the X direction; and the current directions of the magnetic resistance sensing unit 1 and the magnetic resistance sensing unit 4 are the same, and the current directions of the magnetic resistance sensing unit 2 and the magnetic resistance sensing unit 3 are the same, namely the current directions of two non-adjacent magnetic resistance sensing units are the same. For the Z-axis, a half wheatstone bridge configuration is employed, as in fig. 2(c), and the magnitude of the Z-axis signal is equal to the magnitude of the sensed magnetic field of the half wheatstone bridge configuration minus the outputs of one-half X-axis and one-half Y-axis, i.e.: vout Z＝Voutc-(Vouta+Voutb) And/2, no special requirement exists on the current flowing through the magnetoresistive sensing units in the half Wheatstone bridge structure.
The magnetoresistive sensing units may be etched to be circular, square or have a prolate shape (e.g., rectangle, hexagon and ellipse, etc. to facilitate the inclination of the magnetic moment of the ferromagnetic metal along the major axis), and current is to flow through each magnetoresistive sensing unit along the minor axis, as shown in fig. 3.
The bridge arms of the wheatstone bridge structure can be formed by one or more arrayed bridge arms. The array of multiple magneto-resistive sensing elements may improve the signal-to-noise ratio of the sensor depending on the required resistance value for the actual application.
A method for manufacturing a three-axis magnetoresistive sensor comprises the following steps:
s1, depositing a magnetoresistive film stack on the substrate, and annealing to enable the magnetoresistive film stack to have vertical anisotropy;
s2, patterning the magnetoresistive film stack by photoetching and etching processes, and etching the film stack to the substrate to obtain two groups of parallel shapes, such as round and rectangular shapes;
and S3, depositing a ferromagnetic metal layer, patterning to manufacture electrodes, connecting the magnetoresistive sensing units into a full Wheatstone bridge (an X axis and a Y axis), and simultaneously manufacturing another half Wheatstone bridge (a Z axis).
Example 1
Based on magnetoresistive cells, in particular magnetic thin-film materials with perpendicular anisotropyThe material comprises Si/SiO in turn from bottom to top2A substrate, a 5nm Pt spin generation layer, a 1nm Co ferromagnetic metal, and a 2nm MgO capping layer.
Example 2
Based on a magnetic resistance unit, in particular to a magnetic thin film material with vertical anisotropy, which sequentially comprises Si/SiO from bottom to top2A substrate, a 2nm Pt spin generation layer, 0.3nm Co and 0.6nm Ni ferromagnetic gold, and a 2nm MgO capping layer.
Example 3
The structure of the magnetic thin film material with perpendicular anisotropy was the same as that described in example 2, except that the spin generation layer was made of 1nm Bi2Se3。
Example 4
The structure of the magnetic thin film material with perpendicular anisotropy was the same as that described in example 2, except that the spin generation layer was made of 1nm WTE2. Example 5
The structure of the magnetic thin film material with perpendicular anisotropy was the same as that described in example 4, except that the ferromagnetic metal was made of 0.3nm Co and 0.6nm Pt.
Example 6
The structure of the magnetic thin film material with perpendicular anisotropy was the same as that described in example 4, except that the ferromagnetic metal was made of 0.3nm Co and 0.6nm Pd.
Example 7
Based on a magnetic resistance unit, in particular to a magnetic thin film material with vertical anisotropy, which sequentially comprises Si/SiO from bottom to top2Substrate, 5nm Pt spin generation layer, 1.2nm CoFeB ferromagnetic metal and 2nm MgO capping layer.
Example 8
The structure of the magnetic thin film material having perpendicular anisotropy was the same as that described in example 7, except that the spin generation layer was formed of 5nm W.
Example 9
The structure of the magnetic thin film material having perpendicular anisotropy was the same as that described in example 7, except that the material for the spin generation layer was 5nm Ta.
Example 10
The structure of the magnetic thin film material having perpendicular anisotropy was the same as that described in example 7, except that the spin generation layer was made of 5nm Mo.
Example 11
The magnetic thin film material structure having perpendicular anisotropy as described in example 7, except that the spin generation layer was made of 5nm MoTe2。
Claims (9)
1. A three-axis magnetoresistive magnetic field sensor comprising: the magnetic resistance sensing unit is connected with the lead connecting circuit; the method is characterized in that: the magnetic resistance sensing unit further comprises a magnetic resistance unit and a sensing unit, wherein the magnetic resistance unit is made of a magnetic resistance film stack, and the sensing unit consists of one or more magnetic resistance units;
the magnetoresistive film stack includes: from bottom to top: a substrate, a spin generation layer, a ferromagnetic metal layer, and a capping layer;
the ferromagnetic metal layer has perpendicular anisotropy, and when currents in different directions or different magnitudes are applied, magnetic moments are biased to different directions.
2. The three-axis magnetoresistive magnetic field sensor of claim 1, wherein: the spin generation layer is one of heavy metals Ta, W, Pt, Hf, Au, Hf and Mo or a Ti nonmagnetic metal.
3. The three-axis magnetoresistive magnetic field sensor of claim 1, wherein: the spin generation layer is Bi2Se3、Bi2Te3、Sb2Te3Or (Bi)xSb1-x)2Te3One kind of crystal thin film.
4. The three-axis magnetoresistive magnetic field sensor of claim 1, wherein: the spin generation layer is BixSe1-xPolycrystalline or amorphous films.
5. The three-axis magnetoresistive magnetic field sensor of claim 1, wherein: the spin generation layer is WTE2、MoTe2Or MoxW1-xTe2A single crystal, polycrystalline or amorphous concha semimetal film.
6. The three-axis magnetoresistive magnetic field sensor of claim 1, wherein: the ferromagnetic metal layer is CoxFe1-x、(CoxFe1-x)1-yBy、Co、CoxNi1-xOr CoxPt1-xOne kind of (1).
7. The three-axis magnetoresistive magnetic field sensor of claim 1, wherein: the covering layer mainly comprises: MgO and Al2Ox、SiO2、SiNXOne kind of (1).
8. The tri-axial magnetoresistive magnetic field sensor of any of claims 1-7 wherein: the magneto-resistive sensing cells are etched in a circular, square or oblong pattern, and a current is passed through each magneto-resistive sensing cell along the short axis direction.
9. A method of manufacturing a three-axis magnetoresistive sensor according to claims 1-8, comprising the steps of:
s1, depositing a magnetoresistive film stack on the substrate, and annealing to enable the magnetoresistive film stack to have vertical anisotropy;
s2, patterning the magnetoresistive film stack by photoetching and etching processes, and etching the film stack to the substrate to form two groups of parallel shapes;
and S3, depositing a ferromagnetic metal layer, patterning to manufacture electrodes, connecting the magnetoresistive sensing units into a full Wheatstone bridge, namely an X axis and a Y axis, and simultaneously manufacturing another half Wheatstone bridge, namely a Z axis.
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Cited By (2)
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| CN114720923A (en) * | 2022-05-17 | 2022-07-08 | 北京芯可鉴科技有限公司 | Hollow cubic packaged three-dimensional magnetic sensor and manufacturing method thereof |
| CN116106801A (en) * | 2023-04-14 | 2023-05-12 | 珠海多创科技有限公司 | Magneto-resistive sensor, magnetic sensing device and preparation method thereof |
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Application publication date: 20210903 |