CN113327852B - Chemical mechanical polishing method for wafer surface - Google Patents
Chemical mechanical polishing method for wafer surface Download PDFInfo
- Publication number
- CN113327852B CN113327852B CN202110586108.3A CN202110586108A CN113327852B CN 113327852 B CN113327852 B CN 113327852B CN 202110586108 A CN202110586108 A CN 202110586108A CN 113327852 B CN113327852 B CN 113327852B
- Authority
- CN
- China
- Prior art keywords
- wafer
- polishing
- chemical mechanical
- grinding
- mechanical polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 219
- 239000000126 substance Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 58
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052802 copper Inorganic materials 0.000 claims abstract description 47
- 239000010949 copper Substances 0.000 claims abstract description 47
- 230000007547 defect Effects 0.000 claims abstract description 46
- 239000007788 liquid Substances 0.000 claims description 17
- 239000003112 inhibitor Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 32
- 239000002184 metal Substances 0.000 abstract description 32
- 235000012431 wafers Nutrition 0.000 description 146
- 239000000243 solution Substances 0.000 description 67
- 238000005516 engineering process Methods 0.000 description 10
- 238000001514 detection method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004475 Arginine Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003115 biocidal effect Effects 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910001447 ferric ion Inorganic materials 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a chemical mechanical polishing method for a wafer surface, which comprises the following steps: (1) carrying out first grinding on the surface of the wafer to remove the copper main body on the groove of the wafer; (2) carrying out second grinding on the surface of the wafer obtained in the step (1) to remove copper residues on the groove of the wafer; (3) performing over-polishing treatment on the surface of the wafer obtained in the step (2) to reduce the depth of the butterfly defect; (4) and (4) carrying out third grinding on the surface of the wafer obtained in the step (3) to thin the oxide layer on the groove of the wafer to a set thickness. The method provided by the invention effectively reduces the butterfly defect depth of the metal copper, further improves the planarization degree of the surface of the wafer, simultaneously improves the grinding efficiency and increases the machine productivity.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, relates to a chemical mechanical polishing method, and particularly relates to a chemical mechanical polishing method for a wafer surface.
Background
In the fabrication of backside illuminated image sensors (BSIs), it is common in the art to planarize the wafer surface prior to oxide bonding using Chemical Mechanical Polishing (CMP). The planarization degree of the wafer surface directly affects the number and size of bubbles between subsequent bonded wafers, and further affects the working efficiency of the wafers. The existing single-chip oxide layer chemical mechanical polishing process is weak in repair capability of butterfly defects in a wafer, and further the final planarization degree of the surface of the wafer is influenced by the superposition of the butterfly defects.
CN 102371534a discloses a chemical mechanical polishing method for a wafer surface, the method comprising: providing a wafer after primary chemical mechanical polishing; forming a buffer layer on the surface of the wafer; and carrying out second chemical mechanical polishing on the surface of the wafer, and removing the buffer layer. The buffer layer can prevent residues on the surface of the wafer from contacting with the grinding liquid to form new defects in the second chemical mechanical grinding, and the buffer layer also plays a role in accurately controlling the grinding stop position so as to avoid damaging a semiconductor device on the wafer. However, the buffer layer needs to be additionally formed and removed, the complexity of the process is increased, the improvement of the production efficiency is not facilitated, and the problem of the butterfly defect cannot be effectively solved by the method.
CN 104647197a discloses a chemical mechanical polishing method for polishing tantalum, the method comprising: providing a silicon wafer, wherein the silicon wafer comprises tantalum; providing an alkaline chemical mechanical polishing solution, which contains water, an abrasive, sylvite, epoxy ethylene-epoxy propylene copolymer and an oxidant, and has an alkaline pH value; providing a chemical mechanical polishing pad having a polishing surface; distributing chemical mechanical polishing liquid onto the chemical mechanical polishing pad through a polishing machine at or near an interface between the chemical mechanical polishing pad and the silicon wafer; and establishing dynamic contact at an interface between the polishing surface of the chemical mechanical polishing pad and the silicon wafer under a downward force of not less than 1.5 psi; polishing the silicon wafer; and a portion of the tantalum is removed from the silicon wafer. However, the invention can not reduce the butterfly defect depth of the copper metal, and the planarization degree of the wafer surface needs to be further improved.
CN 109382756a discloses a chemical mechanical polishing method of tungsten, the method comprising providing a substrate containing tungsten features of 100 μm or less; providing a polishing composition comprising water as an initial component; an oxidizing agent; arginine or a salt thereof; a dicarboxylic acid; a source of ferric ions; a colloidal silica abrasive; and optionally a pH adjuster, optionally a surfactant, optionally a biocide; providing a chemical mechanical polishing pad having a polishing surface; creating a dynamic contact at an interface between the polishing pad and the substrate; and dispensing a polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; some of which is polished away from the substrate and at least reduces dishing of the tungsten features of 100 μm or less. However, the polishing composition provided by said invention is not suitable for chemical mechanical polishing of copper metal, and has a limited effect on reducing the depth of dishing, and still has a large optimization space.
Therefore, how to provide a chemical mechanical polishing method for a wafer surface can effectively reduce the butterfly defect depth of metal copper, further improve the planarization degree of the wafer surface, simultaneously improve the polishing efficiency and increase the machine productivity, and becomes a problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a chemical mechanical polishing method for a wafer surface, which effectively reduces the butterfly defect depth of metal copper, further improves the planarization degree of the wafer surface, improves the polishing efficiency and increases the machine productivity.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a chemical mechanical polishing method for a wafer surface, which comprises the following steps:
(1) carrying out first grinding on the surface of the wafer to remove the copper main body on the groove of the wafer;
(2) carrying out second grinding on the surface of the wafer obtained in the step (1) to remove copper residues on the groove of the wafer;
(3) performing over-polishing treatment on the surface of the wafer obtained in the step (2) to reduce the depth of the butterfly defect;
(4) and (4) carrying out third grinding on the surface of the wafer obtained in the step (3) to thin the oxide layer on the groove of the wafer to a set thickness.
The method removes the metal copper on the wafer groove by the first two steps of grinding, and performs over-polishing treatment under specific conditions on the basis to ensure that the depth of butterfly defects is reduced as much as possible while the residual copper is completely removed, thereby improving the planarization degree of the surface of the wafer. Finally, the oxide layer on the wafer groove is thinned to a set thickness through grinding treatment. The whole process has high grinding efficiency and increases the productivity of the machine.
Preferably, steps (1) - (4) are each independently performed in a grinding pan.
Preferably, the grinding disc has a rotational speed of 60-80rpm, for example 60rpm, 62rpm, 64rpm, 66rpm, 68rpm, 70rpm, 72rpm, 74rpm, 76rpm, 78rpm or 80rpm, but is not limited to the recited values, and other values not recited in the range of values are equally applicable.
Preferably, the first grinding in step (1) is accompanied by injecting a polishing liquid to the surface of the wafer.
Preferably, the flow rate of the polishing solution is 280-300mL/min, such as 280mL/min, 282mL/min, 284mL/min, 286mL/min, 288mL/min, 290mL/min, 292mL/min, 294mL/min, 296mL/min, 298mL/min, or 300mL/min, but is not limited to the recited values, and other values not recited in the range are equally applicable.
According to the present invention, it can be known from the previous experimental study that the flow rate of the polishing liquid has a significant effect on the polishing rate. When the flow rate of the polishing liquid is less than 280mL/min or more than 300mL/min, the polishing rate is reduced, which affects the polishing efficiency and is not favorable for the rapid removal of the copper bulk.
Preferably, the pressure applied to the first grind in step (1) is 2-3psi, such as 2psi, 2.1psi, 2.2psi, 2.3psi, 2.4psi, 2.5psi, 2.6psi, 2.7psi, 2.8psi, 2.9psi, or 3psi, but is not limited to the recited values, and other values not recited in this range are equally applicable.
In the invention, the polishing rate and the applied pressure are in positive correlation, and in order to rapidly remove the copper body and improve the grinding efficiency, the applied pressure of the first grinding in the step (1) needs to be set to be 2-3psi, and the damage or over grinding of the wafer caused by excessive applied pressure is avoided.
Preferably, the thickness of the wafer obtained after the copper bulk removal in step (1) is 180-200nm, such as 180nm, 182nm, 184nm, 186nm, 188nm, 190nm, 192nm, 194nm, 196nm, 198nm or 200nm, but not limited to the values listed, and other values not listed in the range of the values are also applicable.
Preferably, the second grinding in step (2) is accompanied by injecting a polishing liquid to the surface of the wafer.
Preferably, the flow rate of the polishing solution is 280-300mL/min, such as 280mL/min, 282mL/min, 284mL/min, 286mL/min, 288mL/min, 290mL/min, 292mL/min, 294mL/min, 296mL/min, 298mL/min, or 300mL/min, but is not limited to the recited values, and other values not recited in the range are equally applicable.
Preferably, the second grinding in step (2) is applied at a pressure of 1-1.5psi, such as 1psi, 1.1psi, 1.2psi, 1.3psi, 1.4psi, or 1.5psi, but not limited to the recited values, and other values not recited in this range are equally applicable.
Preferably, the over-polishing treatment in step (3) is accompanied by injecting a polishing liquid to the surface of the wafer.
Preferably, the flow rate of the polishing solution is 300-450mL/min, such as 300mL/min, 320mL/min, 340mL/min, 360mL/min, 380mL/min, 400mL/min, 420mL/min, 440mL/min, or 450mL/min, but is not limited to the values listed, and other values not listed in the range are equally applicable.
In the present invention, the polishing solutions used in the steps (1) to (3) are each independently a polishing solution for polishing copper, and the polishing solution is not particularly limited as long as it can remove metal copper by polishing, and for example, a U3000 series polishing solution produced by the amji technology can be used.
In the invention, a certain amount of inhibitor is added into the polishing solution adopted in the steps (1) to (3) so as to prevent the polishing rate of the metal copper and the butterfly defect area from being too high. According to the previous experimental study, the following results are obtained: with the increase of the flow rate of the polishing solution, the polishing rate is increased due to the increase of the abrasive particles on the surface of the wafer; when the flow rate of the polishing solution is increased to 300mL/min, the abrasive particles and the inhibitor reach equilibrium, and then the action of the inhibitor is dominant, so that the polishing rate is reduced; when the flow rate of the polishing solution is increased to 450mL/min, the amount of the inhibitor tends to be saturated, and the polishing rate is kept stable, so that the grinding cost is increased by continuously increasing the flow rate of the polishing solution.
Therefore, the concentration of the inhibitor in the butterfly defect area can be effectively increased by controlling the flow rate of the polishing solution to be between 300-450mL/min in the over-polishing treatment link, so that the polishing rate of the butterfly defect area is reduced on the premise of keeping the polishing rate of the surface of the wafer not to be obviously influenced, the depth of the butterfly defect of metal copper is reduced, the planarization degree of the surface of the wafer is increased, the grinding efficiency is also increased, and the capacity of a machine is increased.
Preferably, the pressure applied during the polishing process in step (3) is 0.8-1psi, such as 0.8psi, 0.82psi, 0.84psi, 0.86psi, 0.88psi, 0.9psi, 0.92psi, 0.94psi, 0.96psi, 0.98psi, or 1psi, but is not limited to the values recited, and other values not recited in this range are equally applicable.
In the present invention, it can be found from the previous experimental study that: although a positive correlation is present between the polishing rate and the applied pressure, a pressure inflection point exists around 1psi, and the correlation coefficient of the applied pressure less than 1psi is greater than that of the applied pressure greater than 1psi, i.e., the polishing rate increase of the applied pressure less than 1psi is greater than that of the applied pressure greater than 1 psi.
In addition, butterfly defects can be formed in the over-polishing treatment link of the metal copper on the surface of the wafer, and the actual pressure of the butterfly defect area is smaller than the process set pressure in the grinding process. Therefore, the applied pressure is controlled to be between 0.8 and 1psi in the over-polishing processing link, the butterfly defect depth of the metal copper can be reduced while the polishing rate of the metal copper on the wafer groove is not influenced, and the planarization degree of the wafer surface is further improved.
Preferably, the polishing rate of the over-polishing treatment in the step (3) is
For example, can be
Or
But not limited to, the recited values and other values not recited within the range of values are equally applicable.
In the invention, the polishing rate of the over-polishing treatment in the step (3) is specifically the polishing rate of the metal copper on the wafer groove.
Preferably, the third grinding in step (4) is accompanied by injecting a polishing liquid onto the surface of the oxide layer.
Preferably, the flow rate of the polishing solution is 280-300mL/min, such as 280mL/min, 282mL/min, 284mL/min, 286mL/min, 288mL/min, 290mL/min, 292mL/min, 294mL/min, 296mL/min, 298mL/min, or 300mL/min, but is not limited to the recited values, and other values not recited in the range are equally applicable.
In the present invention, the polishing solution used in step (4) is a polishing solution for polishing the oxide layer, and it is only required to be able to polish and thin the oxide layer, so the specific type of the polishing solution is not particularly limited, and for example, H6T polishing solution produced by the ann collection technology can be used.
In the invention, because the polishing solution adopted in the step (4) is the polishing solution for polishing the oxide layer, but not the polishing solution for polishing the copper, the butterfly-shaped defect of the metal copper can not be additionally generated or deepened in the third polishing process.
Preferably, the third grinding in step (4) is performed at a pressure of 1.5-2psi, such as 1.5psi, 1.6psi, 1.7psi, 1.8psi, 1.9psi, or 2psi, but is not limited to the values recited, and other values not recited in this range are equally applicable.
Preferably, the set thickness in step (4) is 100-150nm, such as 100nm, 105nm, 110nm, 115nm, 120nm, 125nm, 130nm, 135nm, 140nm, 145nm or 150nm, but not limited to the values listed, and other values not listed in the range of the values are also applicable.
In the present invention, the specific value of the set thickness in step (4) is determined by the target electrical value of the final product design.
As a preferred technical solution of the present invention, the chemical mechanical polishing method includes the steps of:
(1) performing first grinding on the surface of the wafer under the pressure of 2-3psi, and removing the copper body on the groove of the wafer until the thickness of the obtained wafer is 180-200nm along with injecting polishing solution with the flow rate of 280-300mL/min to the surface of the wafer;
(2) performing second grinding on the surface of the wafer obtained in the step (1) under the pressure of 1.5-2psi, and removing copper residues on the groove of the wafer along with injecting polishing solution with the flow rate of 280-300mL/min to the surface of the wafer;
(3) applying a pressure of 0.8-1psi to the surface of the wafer obtained in step (2) at a polishing rate
The over-polishing treatment is carried out, and polishing liquid with the flow rate of 300-450mL/min is injected to the surface of the wafer, so that the depth of the butterfly defect is reduced;
(4) performing third grinding on the surface of the wafer obtained in the step (3) under the pressure of 1-1.5psi, and thinning the oxide layer on the wafer groove to 100-150nm along with injecting the polishing solution with the flow rate of 280-300mL/min to the surface of the oxide layer;
wherein, the steps (1) to (4) are respectively and independently carried out in a grinding disc, and the rotating speed of the grinding disc is 60-80 rpm.
Compared with the prior art, the invention has the following beneficial effects:
According to the invention, by reasonably controlling the flow rate and the applied pressure of the polishing solution in the over-polishing treatment link, the butterfly defect depth of the metal copper is reduced to below 10nm while the polishing rate of the metal copper on the wafer groove is not influenced, so that the planarization degree of the wafer surface is further improved, the grinding efficiency is also improved, and the machine productivity is increased.
Drawings
FIG. 1 is a schematic view of a wafer surface in a chemical mechanical polishing method according to the present invention.
Wherein: 1-polishing solution; 2-butterfly defects; 3-an oxide layer.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The present embodiment provides a chemical mechanical polishing method for a wafer surface, the wafer surface is schematically shown in fig. 1, the chemical mechanical polishing method includes the following steps:
(1) performing first grinding on the surface of the wafer under the pressure of 2.5psi, and removing the copper main body on the groove of the wafer until the thickness of the obtained wafer is 190nm along with injecting polishing solution 1 with the flow rate of 290mL/min to the surface of the wafer;
(2) Performing second grinding on the surface of the wafer obtained in the step (1) under the pressure of 1.8psi, and removing copper residues on a groove of the wafer along with injecting polishing solution 1 with the flow rate of 290mL/min to the surface of the wafer;
(3) applying a pressure of 0.9psi to the surface of the wafer obtained in step (2) at a polishing rate
The over-polishing treatment is carried out, and the depth of the butterfly defect 2 is reduced along with the injection of the polishing solution 1 with the flow rate of 400mL/min to the surface of the wafer;
(4) performing third grinding on the surface of the wafer obtained in the step (3) under the applied pressure of 1.3psi, and thinning the oxide layer 3 on the groove of the wafer to 125nm along with injecting the polishing solution 1 with the flow rate of 290mL/min to the surface of the oxide layer 3;
wherein, the steps (1) - (4) are respectively and independently carried out in a grinding disc, and the rotating speed of the grinding disc is 70 rpm; in addition, the polishing solution 1 adopted in the steps (1) to (3) is a U3100 polishing solution produced by the Antarctic technologies, and the polishing solution adopted in the step (4) is an H6T polishing solution produced by the Antarctic technologies.
Through detection, the average depth of the butterfly-shaped metal copper defects 2 on the surface of the wafer obtained in the embodiment is 6nm, and the wafer has excellent planarization degree.
Example 2
The present embodiment provides a chemical mechanical polishing method for a wafer surface, the wafer surface is schematically shown in fig. 1, the chemical mechanical polishing method includes the following steps:
(1) Performing first grinding on the surface of the wafer under the pressure of 2psi, injecting polishing solution 1 with the flow rate of 280mL/min to the surface of the wafer, and removing the copper main body on the groove of the wafer until the thickness of the obtained wafer is 200 nm;
(2) carrying out second grinding on the surface of the wafer obtained in the step (1) under the pressure of 1.5psi, and removing copper residues on a groove of the wafer along with injecting polishing solution 1 with the flow rate of 280mL/min to the surface of the wafer;
(3) applying a pressure of 0.8psi to the surface of the wafer obtained in step (2) at a polishing rate
The over-polishing treatment is carried out, and the depth of the butterfly defect 2 is reduced along with the injection of the polishing solution 1 with the flow rate of 300mL/min to the surface of the wafer;
(4) performing third grinding on the surface of the wafer obtained in the step (3) under the pressure of 1psi, and thinning the oxide layer 3 on the groove of the wafer to 150nm along with injecting the polishing solution 1 with the flow rate of 280mL/min to the surface of the oxide layer 3;
wherein, the steps (1) to (4) are respectively and independently carried out in a grinding disc, and the rotating speed of the grinding disc is 60 rpm; in addition, the polishing solution 1 adopted in the steps (1) to (3) is a U3100 polishing solution produced by the Antarctic technologies, and the polishing solution adopted in the step (4) is an H6T polishing solution produced by the Antarctic technologies.
Through detection, the average depth of the butterfly-shaped metal copper defects 2 on the surface of the wafer obtained in the embodiment is 7nm, and the wafer has excellent planarization degree.
Example 3
The present embodiment provides a chemical mechanical polishing method for a wafer surface, the schematic view of the wafer surface is shown in fig. 1, the chemical mechanical polishing method includes the following steps:
(1) performing first grinding on the surface of the wafer under the pressure of 3psi, injecting polishing solution 1 with the flow rate of 300mL/min to the surface of the wafer, and removing the copper body on the groove of the wafer until the thickness of the obtained wafer is 180 nm;
(2) carrying out second grinding on the surface of the wafer obtained in the step (1) under the pressure of 2psi, and removing copper residues on a groove of the wafer along with injecting polishing solution 1 with the flow rate of 300mL/min to the surface of the wafer;
(3) applying a pressure of 1psi to the surface of the wafer obtained in step (2) at a polishing rate
The over-polishing treatment is carried out, and the depth of the butterfly defect 2 is reduced along with the injection of the polishing solution 1 with the flow rate of 450mL/min to the surface of the wafer;
(4) performing third grinding on the surface of the wafer obtained in the step (3) under the applied pressure of 1.5psi, and thinning the oxide layer 3 on the groove of the wafer to 100nm along with injecting polishing solution 1 with the flow rate of 300mL/min to the surface of the oxide layer 3;
wherein, the steps (1) to (4) are respectively and independently carried out in a grinding disc, and the rotating speed of the grinding disc is 80 rpm; in addition, the polishing solution 1 adopted in the steps (1) to (3) is a U3100 polishing solution produced by the Antarctic technologies, and the polishing solution adopted in the step (4) is an H6T polishing solution produced by the Antarctic technologies.
Through detection, the average depth of the butterfly-shaped metal copper defects 2 on the surface of the wafer obtained in the embodiment is 8nm, and the wafer has excellent planarization degree.
Example 4
This embodiment provides a chemical mechanical polishing method for a wafer surface, wherein the schematic view of the wafer surface is shown in fig. 1, and the chemical mechanical polishing method is the same as embodiment 1 except that the flow rate of the polishing solution 1 in step (3) is reduced to 280mL/min, so that the detailed description thereof is omitted here.
Through detection, the average depth of the butterfly-shaped metal copper defects 2 on the surface of the wafer obtained in the embodiment is 10nm, and the wafer has excellent planarization degree.
Compared with the embodiment 1, the average depth of the butterfly-shaped defect 2 of copper metal on the surface of the wafer obtained in the embodiment is significantly increased, because when the flow rate of the polishing solution 1 in the step (3) is lower than 300mL/min, the effect of the abrasive particles in the polishing solution 1 is dominant, and the concentration of the abrasive particles in the butterfly-shaped defect 2 is higher than that on the surface of the wafer, so that the depth of the butterfly-shaped defect 2 is increased.
Example 5
This embodiment provides a chemical mechanical polishing method for a wafer surface, wherein the schematic view of the wafer surface is shown in fig. 1, and the chemical mechanical polishing method is the same as embodiment 1 except that the flow rate of the polishing solution 1 in step (3) is increased to 470mL/min, so that the detailed description thereof is omitted here.
Through detection, the average depth of the butterfly-shaped metal copper defects 2 on the surface of the wafer obtained in the embodiment is 6nm, and the wafer has excellent planarization degree.
Compared with the example 1, the average depth of the butterfly-shaped defects 2 of copper metal on the surface of the wafer obtained in the present example is kept unchanged, because when the flow rate of the polishing solution 1 in the step (3) is higher than 450mL/min, the amount of the inhibitor in the polishing solution 1 tends to be saturated, and thereafter the polishing rate is kept stable, but the grinding cost is increased due to the fact that the flow rate of the polishing solution 1 is continuously increased.
Example 6
This embodiment provides a chemical mechanical polishing method for a wafer surface, the wafer surface is schematically shown in fig. 1, and the chemical mechanical polishing method is the same as embodiment 1 except that the applied pressure in step (3) is reduced to 0.6psi, so that the details are not repeated herein.
Through detection, the average depth of the butterfly-shaped metal copper defects 2 on the surface of the wafer obtained in the embodiment is 6nm, and the wafer has excellent planarization degree.
Compared with the embodiment 1, although the average depth of the butterfly-shaped metal copper defects 2 on the surface of the wafer obtained in the embodiment is kept constant, the polishing rate is obviously reduced due to the reduction of the applied pressure, so that the grinding efficiency and the machine capacity are reduced.
Example 7
This embodiment provides a chemical mechanical polishing method for a wafer surface, the wafer surface is schematically shown in fig. 1, and the chemical mechanical polishing method is the same as embodiment 1 except that the applied pressure in step (3) is increased to 1.2psi, so that the details are not repeated herein.
Through detection, the average depth of the butterfly-shaped metal copper defects 2 on the surface of the wafer obtained in the embodiment is 9nm, and the wafer has excellent planarization degree.
Compared with the embodiment 1, the average depth of the butterfly-shaped metal defects 2 on the surface of the wafer obtained in the embodiment is obviously increased, because when the applied pressure in the step (3) is higher than 1psi, the increase of the polishing rate is reduced, although the actual pressure in the area of the butterfly-shaped defects 2 is lower than the set pressure of the process during the grinding process, the difference between the polishing rate of the metal copper on the grooves of the wafer and the polishing rate of the metal copper in the butterfly-shaped defects 2 is reduced, and thus the average depth of the butterfly-shaped defects 2 is larger than that in the embodiment 1.
Comparative example 1
The present comparative example provides a chemical mechanical polishing method for a wafer surface, the wafer surface is schematically shown in fig. 1, the chemical mechanical polishing method comprises the following steps:
(1) performing first grinding on the surface of the wafer under the pressure of 2.5psi, and removing the copper main body on the groove of the wafer until the thickness of the obtained wafer is 190nm along with injecting polishing solution 1 with the flow rate of 290mL/min to the surface of the wafer;
(2) Performing second grinding on the surface of the wafer obtained in the step (1) under the pressure of 1.8psi, and removing copper residues on a groove of the wafer along with injecting polishing solution 1 with the flow rate of 290mL/min to the surface of the wafer;
(3) performing third grinding on the surface of the wafer obtained in the step (2) under the applied pressure of 1.3psi, and thinning the oxide layer 3 on the groove of the wafer to 125nm along with injecting the polishing solution 1 with the flow rate of 290mL/min to the surface of the oxide layer 3;
wherein, the steps (1) - (3) are respectively and independently carried out in a grinding disc, and the rotating speed of the grinding disc is 70 rpm; in addition, the polishing solution 1 adopted in the steps (1) and (2) is a U3100 polishing solution produced by the Antarctic technologies, and the polishing solution adopted in the step (3) is an H6T polishing solution produced by the Antarctic technologies.
Through detection, the average depth of the butterfly-shaped defects 2 of the metal copper on the surface of the wafer obtained by the comparative example is 12nm, and the wafer has qualified planarization degree.
Compared with the embodiment 1, the comparative example removes the over-polishing treatment link, so that the average depth of the butterfly defects 2 on the surface of the finally obtained wafer is obviously increased, which indicates that the planarization degree of the surface of the wafer cannot be fully improved only by the step (3).
Therefore, the polishing liquid flow rate and the applied pressure in the over-polishing treatment link are reasonably controlled, the butterfly defect depth of the metal copper is reduced to be below 10nm while the polishing rate of the metal copper on the wafer groove is not influenced, the planarization degree of the surface of the wafer is further improved, the grinding efficiency is improved, and the machine productivity is increased.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (16)
1. A chemical mechanical polishing method for a wafer surface is characterized by comprising the following steps:
(1) carrying out first grinding on the surface of the wafer to remove the copper body on the groove of the wafer;
(2) performing second grinding on the surface of the wafer obtained in the step (1) to remove copper residues on the groove of the wafer;
(3) performing over-polishing treatment on the surface of the wafer obtained in the step (2), wherein the over-polishing treatment is accompanied by injecting polishing liquid to the surface of the wafer, the polishing liquid contains an inhibitor, the flow rate of the polishing liquid is 300-450mL/min, the applied pressure of the over-polishing treatment is 0.8-1psi, and the depth of the butterfly defect is reduced;
(4) and (4) carrying out third grinding on the surface of the wafer obtained in the step (3) to thin the oxide layer on the groove of the wafer to a set thickness.
2. The chemical mechanical polishing method according to claim 1, wherein the steps (1) to (4) are independently performed in a polishing disk.
3. The chemical mechanical polishing method of claim 2, wherein the rotation speed of the polishing disk is 60-80 rpm.
4. The chemical mechanical polishing method of claim 1, wherein the first polishing in step (1) is accompanied by injecting a polishing liquid onto the surface of the wafer.
5. The chemical mechanical polishing method as claimed in claim 4, wherein the flow rate of the polishing solution in step (1) is 280-300 mL/min.
6. The chemical mechanical polishing method of claim 1, wherein the pressure applied in the first polishing in step (1) is 2-3 psi.
7. The chemical mechanical polishing method as claimed in claim 1, wherein the thickness of the wafer obtained after the copper body is removed in step (1) is 180-200 nm.
8. The chemical mechanical polishing method of claim 1, wherein the second polishing in step (2) is accompanied by injecting a polishing liquid onto the surface of the wafer.
9. The chemical mechanical polishing method as claimed in claim 8, wherein the flow rate of the polishing solution in step (2) is 280-300 mL/min.
10. The chemical mechanical polishing method of claim 1, wherein the second polishing in step (2) is performed under a pressure of 1-1.5 psi.
11. The chemical mechanical polishing method of claim 1, wherein the over-polishing treatment has a polishing rate of
12. The chemical mechanical polishing method of claim 1, wherein the third polishing in step (4) is accompanied by injecting a polishing liquid onto the surface of the oxide layer.
13. The chemical mechanical polishing method as claimed in claim 12, wherein the flow rate of the polishing solution in step (4) is 280-300 mL/min.
14. The chemical mechanical polishing method of claim 1, wherein the third polishing in step (4) is performed at a pressure of 1.5-2 psi.
15. The chemical mechanical polishing method as claimed in claim 1, wherein the set thickness in step (4) is 100-150 nm.
16. The chemical mechanical polishing method of claim 1, wherein the chemical mechanical polishing method comprises the steps of:
(1) performing first grinding on the surface of the wafer under the pressure of 2-3psi, and removing the copper body on the groove of the wafer until the thickness of the obtained wafer is 180-200nm along with injecting polishing solution with the flow rate of 280-300mL/min to the surface of the wafer;
(2) performing second grinding on the surface of the wafer obtained in the step (1) under the pressure of 1.5-2psi, and removing copper residues on the groove of the wafer along with injecting polishing solution with the flow rate of 280-300mL/min to the surface of the wafer;
(3) Applying a pressure of 0.8-1psi to the surface of the wafer obtained in step (2) at a polishing rate
The over-polishing treatment is carried out, and polishing liquid with the flow rate of 300-450mL/min is injected to the surface of the wafer, so that the depth of the butterfly defect is reduced;
(4) performing third grinding on the surface of the wafer obtained in the step (3) under the pressure of 1-1.5psi, and thinning the oxide layer on the wafer groove to 100-150nm along with injecting the polishing solution with the flow rate of 280-300mL/min to the surface of the oxide layer;
wherein, the steps (1) to (4) are respectively and independently carried out in a grinding disc, and the rotating speed of the grinding disc is 60-80 rpm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110586108.3A CN113327852B (en) | 2021-05-27 | 2021-05-27 | Chemical mechanical polishing method for wafer surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110586108.3A CN113327852B (en) | 2021-05-27 | 2021-05-27 | Chemical mechanical polishing method for wafer surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113327852A CN113327852A (en) | 2021-08-31 |
| CN113327852B true CN113327852B (en) | 2022-07-29 |
Family
ID=77421798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110586108.3A Active CN113327852B (en) | 2021-05-27 | 2021-05-27 | Chemical mechanical polishing method for wafer surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113327852B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6114246A (en) * | 1999-01-07 | 2000-09-05 | Vlsi Technology, Inc. | Method of using a polish stop film to control dishing during copper chemical mechanical polishing |
| CN101220255A (en) * | 2007-01-11 | 2008-07-16 | 长兴开发科技股份有限公司 | Chemical mechanical polishing slurry and chemical mechanical planarization method |
| CN102110645A (en) * | 2009-12-23 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method used after chemical mechanical polishing |
| CN103474395A (en) * | 2013-09-13 | 2013-12-25 | 华进半导体封装先导技术研发中心有限公司 | TSV planarization method |
| CN104802071A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN104802068A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN107369618A (en) * | 2017-07-07 | 2017-11-21 | 上海华虹宏力半导体制造有限公司 | The flattening method of wafer |
| CN108247528A (en) * | 2016-12-29 | 2018-07-06 | 中芯国际集成电路制造(上海)有限公司 | A kind of processing method of grinding pad |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6656842B2 (en) * | 1999-09-22 | 2003-12-02 | Applied Materials, Inc. | Barrier layer buffing after Cu CMP |
| SG115405A1 (en) * | 2001-09-17 | 2005-10-28 | Inst Of Microelectronics | Method for reducing dishing in chemical mechanical polishing |
| US6555477B1 (en) * | 2002-05-22 | 2003-04-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing Cu CMP corrosion |
| CN101740378B (en) * | 2008-11-13 | 2011-07-20 | 中芯国际集成电路制造(北京)有限公司 | Copper chemical mechanical polishing method |
| CN101958273B (en) * | 2009-07-14 | 2012-11-28 | 中芯国际集成电路制造(上海)有限公司 | Method for constructing copper wire on wafer and chemical mechanical polishing (CMP) method for copper |
| CN101992421B (en) * | 2009-08-14 | 2012-10-03 | 中芯国际集成电路制造(上海)有限公司 | Chemical-mechanical polishing method in copper interconnection process |
| CN103894918A (en) * | 2012-12-28 | 2014-07-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing method |
| CN106384725A (en) * | 2016-10-11 | 2017-02-08 | 天津华海清科机电科技有限公司 | Silicon through hole wafer flattening method |
| CN108257863A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子科技（上海）股份有限公司 | A kind of cmp method |
-
2021
- 2021-05-27 CN CN202110586108.3A patent/CN113327852B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6114246A (en) * | 1999-01-07 | 2000-09-05 | Vlsi Technology, Inc. | Method of using a polish stop film to control dishing during copper chemical mechanical polishing |
| CN101220255A (en) * | 2007-01-11 | 2008-07-16 | 长兴开发科技股份有限公司 | Chemical mechanical polishing slurry and chemical mechanical planarization method |
| CN102110645A (en) * | 2009-12-23 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method used after chemical mechanical polishing |
| CN103474395A (en) * | 2013-09-13 | 2013-12-25 | 华进半导体封装先导技术研发中心有限公司 | TSV planarization method |
| CN104802071A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN104802068A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN108247528A (en) * | 2016-12-29 | 2018-07-06 | 中芯国际集成电路制造(上海)有限公司 | A kind of processing method of grinding pad |
| CN107369618A (en) * | 2017-07-07 | 2017-11-21 | 上海华虹宏力半导体制造有限公司 | The flattening method of wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113327852A (en) | 2021-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100393368B1 (en) | Cmp method and semiconductor manufacturing device | |
| CN1083154C (en) | Grinding method and method for producing semiconductor device and equipment for making semiconductor | |
| CN104802068B (en) | Chemical mechanical polishing method | |
| TWI616940B (en) | Method for the polishing of a semiconductor wafer | |
| TWI828668B (en) | Polishing composition and polishing method using the same | |
| CN111251163B (en) | Processing method for polished silicon wafer with hydrophilic surface | |
| CN104802071A (en) | Chemical mechanical polishing method | |
| KR100591647B1 (en) | Manufacturing method of semiconductor device | |
| WO2022143719A1 (en) | Chemical-mechanical polishing solution and use method therefor | |
| CN100496893C (en) | Method of preparing a surface of a semiconductor wafer to to produce a satisfactory surface for epitaxial growth on SIC film | |
| US6509269B2 (en) | Elimination of pad glazing for Al CMP | |
| JP2010501121A (en) | Selective chemicals for fixed polish CMP | |
| CN113327852B (en) | Chemical mechanical polishing method for wafer surface | |
| CN114131434B (en) | Thinning and polishing method of indium phosphide | |
| CN103943557B (en) | Method for flattening surface of polymer dielectric layer in re-wiring layer through CMP | |
| US20040127045A1 (en) | Chemical mechanical planarization of wafers or films using fixed polishing pads and a nanoparticle composition | |
| CN100468646C (en) | chemical mechanical polishing method | |
| CN117736653A (en) | Polishing solution for single crystal silicon chemical mechanical polishing and chemical mechanical polishing method | |
| CN103943491A (en) | Method for flattening surface of substrate by adopting CMP in pinboard process | |
| CN106346317A (en) | Method for processing and preparing sapphire wafer | |
| JP4489108B2 (en) | Manufacturing method of semiconductor device | |
| CN116276624B (en) | Chemical mechanical polishing method for improving PSG removal rate and consistency thereof | |
| JP3552908B2 (en) | Wafer polishing method | |
| US20230197455A1 (en) | Methods for polishing semiconductor substrates | |
| KR20050073044A (en) | Chemical mechanical polishing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |