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CN113281840B - Semiconductor packaging structure and forming method thereof - Google Patents

Semiconductor packaging structure and forming method thereof Download PDF

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Publication number
CN113281840B
CN113281840B CN202110358183.4A CN202110358183A CN113281840B CN 113281840 B CN113281840 B CN 113281840B CN 202110358183 A CN202110358183 A CN 202110358183A CN 113281840 B CN113281840 B CN 113281840B
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China
Prior art keywords
integrated circuit
optical integrated
semiconductor package
recess
connection structure
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CN202110358183.4A
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CN113281840A (en
Inventor
林岳儒
洪志成
费筠芷
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004Combinations of two or more optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • G02B6/32Optical coupling means having lens focusing means positioned between opposed fibre ends

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

The invention discloses a semiconductor packaging structure and a forming method thereof. The semiconductor package structure includes: an optical integrated circuit; the optical fiber array units are transversely arranged at intervals with the optical integrated circuit; a connection structure spanning between the optical integrated circuit and the optical fiber array unit; and a colloid arranged between the optical integrated circuit and the connection structure; wherein a recess is provided on at least one of the opposing surfaces of the optical integrated circuit and the connection structure, and a gel is filled into the recess such that a distance between the optical integrated circuit and the connection structure is less than 5 microns.

Description

Semiconductor packaging structure and forming method thereof
Technical Field
The present invention relates to the field of semiconductor technology, and in particular, to a semiconductor package structure and a method for forming the same.
Background
In current silicon Photonics (PIC) products, since six-axis alignment bonding is necessary between the PIC and the Fiber Array Unit (FAU), a connection structure (shell) is designed to be bonded on the chip and connected to the FAU, so as to increase the alignment speed, thereby reducing the cost of the FAU attachment process. Therefore, for optical precision alignment, bonding and transmission, the accuracy of the X, Y axis must be controlled to within 6-8 microns, for example, and the Z axis accuracy must be less than 5 microns, for example; since the bonding technique and the machine are used to control the bonding mechanism, not the height, and the adhesive used contains filler (filler) components greater than 5 microns, it is difficult to control the thickness of the bonded adhesive to be within 5 microns, and in order to make the FAU and the Lens (Lens) smoothly bond, and the adhesive is less likely to overflow (no plated out) the boundary of the chip, a new solution is needed to accomplish the above challenges and limitations.
Disclosure of Invention
In view of the above problems in the related art, the present invention provides a semiconductor package structure and a method for forming the same, so that the thickness of the adhesive can be less than 5 μm, and the problem that the adhesive overflows the chip boundary can be avoided.
The technical scheme of the invention is realized as follows:
according to an aspect of the present invention, there is provided a semiconductor package structure including: an optical integrated circuit; the optical fiber array units are transversely arranged at intervals with the optical integrated circuit; a connection structure spanning between the optical integrated circuit and the optical fiber array unit; and a gel disposed between the optical integrated circuit and the connection structure. Wherein a recess is provided on at least one of the opposing surfaces of the optical integrated circuit and the connection structure, and a gel is filled into the recess such that a distance between the optical integrated circuit and the connection structure is less than 5 microns.
In some embodiments, the recess is a rectangular recessed region.
In some embodiments, the recess is an elongated recess, wherein the recess has two first legs, each extending in a first direction, and a second leg, each extending in a second direction perpendicular to the first direction and connecting one end of each first leg.
In some embodiments, the gel does not extend beyond the sidewalls of the optical integrated circuit.
In some embodiments, the semiconductor package structure further includes a lens laterally positioned between the optical integrated circuit and the fiber array unit, and the connection structure spans the lens. The connection structure has another recess for accommodating the lens and arranged at a distance from the recess.
According to another aspect of the present invention, there is provided a semiconductor package structure including: an optical integrated circuit; the optical fiber array units are transversely arranged at intervals with the optical integrated circuit; a connection structure spanning between the optical integrated circuit and the optical fiber array unit; and a gel disposed between the optical integrated circuit and the connection structure. The upper surface of the optical integrated circuit, which is arranged opposite to the connecting structure, is provided with a protruding part surrounding the colloid.
In some embodiments, the protrusion is a protrusion disposed around an edge of the optical integrated circuit.
In some embodiments, the protrusion is a metallic material.
In some embodiments, the protrusions are a dielectric material.
According to still another aspect of the present invention, there is provided a method of forming a semiconductor package structure, comprising: providing an optical integrated circuit; disposing the gel on the optical integrated circuit; the connection structure is pressed on the colloid by a thermal compression bonding (TC bonding) device, so that the distance between the optical integrated circuit and the connection structure is less than 5 microns.
In some embodiments, the colloid has a filler therein, the filler having a size of less than 5 microns.
In some embodiments, the gel is an adhesive that is disposed by dispensing.
In some embodiments, the gel is an epoxy (epoxy) applied by coating. The epoxy resin is cured by ultraviolet light at the same time as the coating.
In some embodiments, a recess is provided on at least one of the opposing surfaces of the optical integrated circuit and the connection structure. In some embodiments, the recess is a rectangular recessed region. In some embodiments, the recess is an elongated recess, wherein the recess has two first legs, each extending in a first direction, and a second leg, each extending in a second direction perpendicular to the first direction and connecting one end of each first leg.
In some embodiments, a surface of the optical integrated circuit opposite to the connection structure is provided with a protrusion surrounding the gel, wherein the gel is disposed in a middle region of an edge of the protrusion away from the optical integrated circuit.
In some embodiments, the protrusion is a protrusion disposed around an edge of the optical integrated circuit, the protrusion being a metallic material or a dielectric material.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic view of a semiconductor package structure according to an embodiment of the present invention.
Fig. 2 is a flowchart of a method of forming a semiconductor package according to an embodiment of the present invention.
Fig. 3A-3C are schematic diagrams illustrating various stages of forming a semiconductor package according to embodiments of the present invention.
Fig. 4A-4C are schematic diagrams illustrating various stages of forming a semiconductor package according to another embodiment of the invention.
Fig. 5A and 5B are schematic structural diagrams of an optical integrated circuit according to an embodiment of the present invention.
Fig. 6A and 6B are schematic structural views of a connection structure according to an embodiment of the present invention.
Fig. 7 is a schematic diagram of an optical integrated circuit according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which are derived by a person skilled in the art based on the embodiments of the invention, fall within the scope of protection of the invention.
In order to facilitate understanding of the present invention, a semiconductor package structure according to an embodiment of the present invention of fig. 1 will be described first. As shown in fig. 1, fiber Array Units (FAUs) 130 are laterally spaced from optical integrated circuits 120. The connection structure 110 spans between the optical integrated circuit 120 and the FAU 130. The glue 125 is disposed between the optronic circuit 120 and the connection structure 110 to bond the optronic circuit 120 and the connection structure 110. The lens 140 is laterally located between the optical integrated circuit 120 and the optical fiber array unit 130, and the connection structure 110 spans the lens 140.
Fig. 2 is a flowchart of a method of forming a semiconductor package according to an embodiment of the present invention. In a method of forming a semiconductor package structure, an optical integrated circuit is provided at step S202. At step S204, a gel is disposed on the optical integrated circuit. Then, at step S206, the connection structure is pressed onto the glue by a thermal compression bonding (TC bonding) device, such that the distance between the optical integrated circuit and the connection structure is less than 5 micrometers.
According to the method for forming the semiconductor packaging structure, the existing chip bonding equipment is replaced by the hot-pressing bonding equipment, the height is precisely controlled by the downward pressure of the hot-pressing bonding equipment, the precision and the height of the connecting structure can be precisely controlled, the speed of FAU six-axis alignment is greatly accelerated, the manufacturing cost is effectively reduced, and the product yield and the competitiveness are improved.
Fig. 3A-3C are schematic diagrams illustrating various stages of forming a semiconductor package according to embodiments of the present invention. As shown in fig. 3A, the optronic circuit 120 is provided, and the glue 125 is sprayed on the optronic circuit 120 by a dispenser (dispensing machine) 312 (steps S202 and S204 in fig. 2). In this embodiment, the gel 125 may be a non-conductive gel. The gel 125 may have a filler therein having a size of less than 5 microns.
Then, as shown in fig. 3B, the connection structure 110 is placed over the optronic integrated circuit 120, and the surface of the connection structure 110 is pressurized and heated using the thermocompression bonding device 316 (step S206 in fig. 2) to cure the gel 125 and control the height thereof. In fig. 3C, the bonding of the optronic circuit 120 to the connection structure 110 is completed, the distance between the optronic circuit 120 and the connection structure 110 (i.e., the thickness of the gel 125) may be less than 5 microns, and the gel 125 does not overflow the sidewalls of the optronic circuit 120.
Fig. 4A-4C are schematic diagrams illustrating various stages of forming a semiconductor package according to another embodiment of the invention. As shown in fig. 4A, the optronic circuit 120 is provided and the colloid 125 is sprayed (inkjetting) onto the optronic circuit 120 by means of a spraying device 314 (steps S202, S204 in fig. 2). In this embodiment, the colloid 125 may be epoxy resin (epoxy). The epoxy is first-stage cured (not fully cured) using Ultraviolet (UV) light 315 while the epoxy is being applied.
Then, as shown in fig. 4B, the connection structure 110 is placed over the optical integrated circuit 120, and the thermal compression bonding apparatus 316 is used to press and heat on the surface of the connection structure 110 (step S206 in fig. 2) to cure the epoxy resin again and control the height thereof. In fig. 4C, the bonding of the optronic circuit 120 to the connection structure 110 is completed, the distance between the optronic circuit 120 and the connection structure 110 (i.e., the thickness of the gel 125) may be less than 5 microns, and the gel 125 does not overflow the sidewalls of the optronic circuit 120.
Further, in some embodiments, as shown in fig. 5A and 5B, the optical integrated circuit 120 (fig. 1) may have a recess 510 on an upper surface opposite the connection structure 110 (fig. 1). In some embodiments, the recess 510 may be formed by plasma etching. In fig. 5A, the recess 510 is a rectangular recessed area. In fig. 5B, the recess 510 is an elongated extending groove. Specifically, the groove has two first branch portions 511 and second branch portions 512, each first branch portion 511 extends in a first direction (lateral direction), the second branch portion 512 extends in a second direction perpendicular to the first direction, and the second branch portion 512 connects one end of each first branch portion 511. The other end of the first leg 511 is adjacent to a sidewall of the optical integrated circuit 120 that is under the connection structure 110 (fig. 1). The recess 510 in fig. 5A and 5B is merely exemplary, and in other embodiments, the recess 510 may take any other suitable shape configuration.
In some embodiments, a lower surface of the connection structure 110 (fig. 1) opposite the optical integrated circuit 120 (fig. 1) may have a recess 610, as shown in fig. 6A and 6B. The connection structure 110 also has another recess 620 for accommodating the lens 140 (fig. 1), the other recess 620 being arranged adjacent to the recess 610 at a distance. In some embodiments, the recess 610 may be formed by plasma etching. In fig. 6A, the recess 610 is a rectangular recessed area. In fig. 6B, the recess 610 is an elongated groove. Specifically, the groove has two first branch portions 611 and second branch portions 612, each first branch portion 611 extends in a first direction (lateral direction), the second branch portion 612 extends in a second direction perpendicular to the first direction, and the second branch portion 612 connects one end of each first branch portion 611. The second leg 612 is disposed adjacent to another recess 620. The recess 610 in fig. 6A and 6B is merely exemplary, and in other embodiments, the recess 610 may take any other suitable shape configuration.
By forming the recess 510 on the optronic circuit 120 or the recess 610 on the connection structure 110, excess glue 125 can be filled into the recess to avoid overflow of the glue 125 from the sidewalls of the optronic circuit 120.
In some embodiments, as shown in fig. 7, a protrusion 710 may be provided at an upper surface of the light integrated circuit 120 (fig. 1) disposed opposite the connection structure 110 (fig. 1) to surround the gel 125 with the protrusion 710. The protrusion 710 is a protrusion 710 that extends around the edge of the optical integrated circuit 120. Specifically, the protruding portion 710 has two first leg portions 711 and second leg portions 712, each of the first leg portions 711 extends in a first direction (lateral direction), the second leg portions 712 extends in a second direction perpendicular to the first direction, and the second leg portions 712 connect one end of each of the first leg portions 711. The second leg 712 is adjacent to a sidewall of the optronic integrated circuit 120 that is below the connection structure 110 (fig. 1).
The protrusion 710 is a metallic material or a dielectric material. The gel 125 may be disposed in a middle region of the protrusion 710 away from an edge of the photonic integrated circuit 120. Alternatively, a similarly configured protrusion 710 may also be provided at a lower surface of the connection structure 110 opposite the optical integrated circuit 120. In some embodiments, the height of the protrusion 710 may be less than 5 microns. The protrusion 710 in fig. 7 is merely exemplary, and in other embodiments, the protrusion 710 may take any other suitable shape configuration.
By providing the protrusion 710 on one of the opposite surfaces of the optronic circuit 120 or the connection structure 110, glue overflow from the sidewalls of the optronic circuit can be avoided.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.

Claims (20)

1. A semiconductor package structure, comprising:
an optical integrated circuit;
the optical fiber array units are transversely arranged at intervals with the optical integrated circuit;
a connection structure spanning between the optical integrated circuit and the optical fiber array unit; and
the colloid is arranged between the optical integrated circuit and the connecting structure;
wherein a recess is provided on at least one of the opposite surfaces of the optical integrated circuit and the connection structure, and the colloid is filled in the recess, and the connection structure is pressed on the colloid by a thermocompression bonding device, so that the distance between the optical integrated circuit and the connection structure is less than 5 micrometers.
2. The semiconductor package according to claim 1, wherein the recess is a rectangular recessed region.
3. The semiconductor package according to claim 1, wherein the recess is an elongated extending groove, wherein the groove has two first branches each extending in a first direction and a second branch extending in a second direction perpendicular to the first direction and connecting one end of each of the first branches.
4. The semiconductor package according to claim 1, wherein the encapsulant does not protrude beyond a sidewall of the optronic integrated circuit.
5. The semiconductor package according to claim 1, further comprising a lens laterally between the optical integrated circuit and the optical fiber array unit, and wherein the connection structure spans the lens.
6. The semiconductor package according to claim 5, wherein the connection structure has another recess for accommodating the lens and arranged at a spacing from the recess.
7. A semiconductor package structure, comprising:
an optical integrated circuit;
the optical fiber array units are transversely arranged at intervals with the optical integrated circuit;
a connection structure spanning between the optical integrated circuit and the optical fiber array unit; and
the colloid is arranged between the optical integrated circuit and the connecting structure;
the upper surface of the optical integrated circuit, which is arranged opposite to the connecting structure, is provided with a protruding part surrounding the colloid, and the connecting structure is pressed on the colloid by means of a hot-press bonding device, so that the distance between the optical integrated circuit and the connecting structure is smaller than 5 microns.
8. The semiconductor package according to claim 7, wherein the protruding portion is a protruding portion provided around an edge of the optical integrated circuit.
9. The semiconductor package according to claim 7, wherein the protruding portion is a metal material.
10. The semiconductor package according to claim 7, wherein the protrusion is a dielectric material.
11. A method of forming a semiconductor package, comprising:
providing an optical integrated circuit;
disposing a gel on the optical integrated circuit;
and pressing the connecting structure on the colloid by means of a thermal compression joint device so that the distance between the optical integrated circuit and the connecting structure is smaller than 5 microns, wherein at least one of the opposite surfaces of the optical integrated circuit and the connecting structure is provided with a concave part, and the colloid is filled in the concave part.
12. The method of claim 11, wherein the gel has a filler therein, the filler having a size of less than 5 microns.
13. The method of claim 11, wherein the gel is an adhesive disposed by dispensing.
14. The method of claim 11, wherein the gel is an epoxy resin applied by a coating process.
15. The method of claim 14, wherein the epoxy is cured by ultraviolet light simultaneously with the coating.
16. The method of claim 11, wherein the recess is a rectangular recessed area.
17. The method of claim 11, wherein the recess is an elongated groove, wherein the groove has two first legs each extending in a first direction and a second leg extending in a second direction perpendicular to the first direction and connecting one end of each of the first legs.
18. A method of forming a semiconductor package, comprising:
providing an optical integrated circuit;
disposing a gel on the optical integrated circuit;
and pressing the connecting structure on the colloid by means of a hot-press bonding device, so that the distance between the optical integrated circuit and the connecting structure is smaller than 5 microns, wherein the surface of the optical integrated circuit, which is arranged opposite to the connecting structure, is provided with a protruding part surrounding the colloid.
19. The method of claim 18, wherein the gel is disposed in a middle region of the protrusion away from an edge of the optronic integrated circuit.
20. The method of claim 18, wherein the protrusion is a protrusion disposed around an edge of the optical integrated circuit, the protrusion being of a metallic material or a dielectric material.
CN202110358183.4A 2021-04-01 2021-04-01 Semiconductor packaging structure and forming method thereof Active CN113281840B (en)

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CN202110358183.4A CN113281840B (en) 2021-04-01 2021-04-01 Semiconductor packaging structure and forming method thereof

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Application Number Priority Date Filing Date Title
CN202110358183.4A CN113281840B (en) 2021-04-01 2021-04-01 Semiconductor packaging structure and forming method thereof

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CN113281840B true CN113281840B (en) 2023-06-16

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102903691A (en) * 2011-07-29 2013-01-30 台湾积体电路制造股份有限公司 Semiconductor devices, packaging methods and structures

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9229169B2 (en) * 2011-08-16 2016-01-05 International Business Machines Corporation Lens array optical coupling to photonic chip
US10097271B2 (en) * 2014-07-11 2018-10-09 Acacia Communications, Inc. Multichannel coherent transceiver and related apparatus and methods
US10168492B2 (en) * 2015-02-11 2019-01-01 Corning Optical Communications LLC Optical coupling assemblies for coupling optical cables to silicon-based laser sources
US10228520B2 (en) * 2016-08-30 2019-03-12 Corning Optical Communications LLC Fiber-to-waveguide optical interface devices and coupling devices with lenses for photonic systems
US10866373B2 (en) * 2018-06-27 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Optical transceiver and manufacturing method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102903691A (en) * 2011-07-29 2013-01-30 台湾积体电路制造股份有限公司 Semiconductor devices, packaging methods and structures

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