CN113253519A - Dot-matrix backlight source structure and display device - Google Patents
Dot-matrix backlight source structure and display device Download PDFInfo
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- CN113253519A CN113253519A CN202110677484.3A CN202110677484A CN113253519A CN 113253519 A CN113253519 A CN 113253519A CN 202110677484 A CN202110677484 A CN 202110677484A CN 113253519 A CN113253519 A CN 113253519A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133605—Direct backlight including specially adapted reflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
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Abstract
本发明实施例提供一种背光源结构，包括基板和若干设于基板上的发光芯片；背光源结构还包括设于发光芯片上的第一反射层，第一反射层至少将发光芯片的正出光面覆盖；背光源结构还包括将第一反射层覆盖的扩散层，以及设于扩散层上的第二反射层；来自发光芯片的光线经第一反射层射入扩散层，经扩散层扩散处理后射至第二反射层，并经第二反射层射出。本实施例通过在发光芯片的正出光面上依次覆盖第一反射层、扩散层和第二反射层，有效改进了现有技术中的背光源结构，在某些实施过程中，发光芯片发出的部分光线可以在第一反射层与第二反射层之间相互反射，从而进一步打散芯片出光，使得背光源结构出光更加柔合。
An embodiment of the present invention provides a backlight structure, including a substrate and a plurality of light-emitting chips disposed on the substrate; the backlight structure further includes a first reflective layer disposed on the light-emitting chip, and the first reflective layer at least emits positive light from the light-emitting chip. The backlight structure also includes a diffusion layer covering the first reflection layer, and a second reflection layer arranged on the diffusion layer; the light from the light-emitting chip enters the diffusion layer through the first reflection layer, and is diffused by the diffusion layer. Then, it is emitted to the second reflective layer, and then emitted through the second reflective layer. This embodiment effectively improves the backlight structure in the prior art by sequentially covering the first reflective layer, the diffusion layer and the second reflective layer on the positive light-emitting surface of the light-emitting chip. Part of the light can be mutually reflected between the first reflective layer and the second reflective layer, so as to further disperse the light emitted by the chip, making the light emitted by the backlight structure more flexible.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to but not limited to a dot-matrix backlight source structure and a display device.
Background
The conventional backlight structure requires a diffuser plate or a light guide plate to scatter the light source. For example, in one backlight construction, a light source and a light guide plate are included. The light guide plate is used for guiding the light transmission direction, so that the brightness and the uniformity of the liquid crystal display are improved. In order to improve the utilization efficiency of the light source, a lampshade is usually disposed on one side of the light source for reflecting all the light emitted from the light source into the light guide plate. The light guide plate can be divided into a flat plate-shaped light guide plate and a wedge-shaped light guide plate according to the shape. In order to increase the light extraction efficiency and uniformity, V-shaped grooves or dots are usually disposed on one side of the light guide plate, and the distance and size of the V-shaped grooves or dots disposed on the light guide plate can be designed differently. In the conventional backlight structure, because the light guide plate is used, the size of the backlight structure is large, the area and thickness of the light guide plate are also large, and the cost and weight of the light guide plate are increased, so that the conventional backlight structure is difficult to achieve the characteristics of low cost and light weight. Meanwhile, as electronic products are developed towards the goals of light weight, thinness, shortness and smallness, how to reduce the thickness of the whole backlight structure realizes that the ultrathin structure is a difficult problem which is overcome by the efforts of various manufacturers.
Disclosure of Invention
The dot-matrix backlight source structure and the display device provided by the embodiment of the invention mainly solve the technical problem of reducing the thickness while ensuring the display effect.
In order to solve the above technical problem, an embodiment of the present invention provides a dot-matrix backlight structure, including a substrate and a plurality of light emitting chips disposed on the substrate;
the backlight source structure also comprises a first reflecting layer arranged on the light-emitting chip, and the first reflecting layer at least covers the front light-emitting surface of the light-emitting chip;
the backlight source structure also comprises a diffusion layer covering the first reflection layer and a second reflection layer arranged on the diffusion layer;
light rays from the light-emitting chip are emitted into the diffusion layer through the first reflection layer, are diffused by the diffusion layer, then are emitted to the second reflection layer, and are emitted through the second reflection layer.
Optionally, the first reflective layer covers all light emitting surfaces of at least one of the light emitting chips.
Optionally, the first reflective layer covers at least a portion of an area between the light emitting chips.
Optionally, a thickness of a region of the first reflective layer on the front light-emitting surface of the light-emitting chip is smaller than a thickness of a region on the side light-emitting surface of the light-emitting chip.
Optionally, the diffusion layer includes a front diffusion region located above the front light emitting surface of the light emitting chip, and a side diffusion region located between adjacent light emitting chips.
Optionally, the second reflective layer includes a first reflective region located above the front light emitting surface of the light emitting chip and a second reflective region located between the adjacent light emitting chips.
Optionally, the material of at least one of the first reflective layer and the second reflective layer includes a reflective material and glue, and the reflective material accounts for 5% -15% of the glue mixture by weight.
Optionally, the materials of the first reflective layer and the second reflective layer each include a reflective material and glue, and the reflective material proportion of the second reflective layer is greater than that of the first reflective layer.
Optionally, the material of the diffusion layer includes a diffusion material and glue, and the diffusion material accounts for 5% -30% of the weight of the glue mixture.
Optionally, the material of the diffusion layer further comprises phosphor.
Optionally, the thickness of the first reflective layer ranges from 10 μm to 30 μm, the thickness of the second reflective layer ranges from 10 μm to 30 μm, and the thickness of the diffusion layer ranges from 100 μm to 200 μm.
Based on the same inventive concept, an embodiment of the present invention further provides a display device, including the foregoing dot matrix backlight structure.
According to the dot matrix type backlight source structure and the display device provided by the embodiment of the invention, the dot matrix type backlight source structure comprises a first reflecting layer arranged on the light-emitting chip, and the first reflecting layer at least covers the front light-emitting surface of the light-emitting chip; the backlight source structure further comprises a diffusion layer covering the first reflection layer, and a second reflection layer arranged on the diffusion layer. Compared with the traditional backlight source structure, the backlight source structure has at least the following advantages:
the structure such as a light guide plate can be omitted, the size can be thinner, the structure of the product is simpler, the integration is better, and the cost is reduced;
partial light that the luminescence chip sent can be mutual reflection between first reflection stratum and second reflection stratum to further break up the chip light-emitting, make backlight structure light-emitting gentle and close more.
Additional features and corresponding advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
Fig. 1 is a schematic structural diagram of a backlight source according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of a backlight source according to a first embodiment of the present invention;
fig. 3 is a schematic structural diagram of a backlight source according to a first embodiment of the present invention;
fig. 4 is a schematic structural diagram of a backlight source according to a second embodiment of the present invention;
fig. 5 is a schematic structural diagram of a backlight source according to a second embodiment of the present invention;
fig. 6 is a schematic structural diagram of a backlight source according to a third embodiment of the present invention;
fig. 7 is a schematic structural diagram of a backlight source according to a third embodiment of the present invention;
fig. 8 is a schematic structural diagram of a backlight source according to a third embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The first embodiment is as follows:
in order to reduce the thickness and ensure the display effect of the backlight structure, the present embodiment provides a dot-matrix backlight structure, as shown in fig. 1, including a substrate 1 and a plurality of light emitting chips 2 arranged on the substrate 1 and distributed in an array;
the backlight structure further comprises a first reflection layer 3 arranged on the light-emitting chip, and the first reflection layer 3 at least covers the front light-emitting surface of the light-emitting chip 2.
The backlight structure further comprises a diffusion layer 4 covering the first reflection layer 3, and a second reflection layer 5 arranged on the diffusion layer.
The covering referred to in this embodiment is partial covering or may be complete covering, for example, in fig. 1, the first reflective layer 3 completely covers the front light-emitting surface of the light-emitting chip 2, and the diffusion layer 4 covers the upper surface of the first reflective layer 3, but may not cover the side surface of the first reflective layer 3, and certainly, the diffusion layer 4 may also completely cover the side surface of the first reflective layer 3 according to actual needs.
Light rays from the light emitting chip 2 enter the diffusion layer 4 through the first reflection layer 3, are diffused by the diffusion layer 4, then enter the second reflection layer 5, and are emitted through the second reflection layer 5.
That is, in the present embodiment, a part of the light emitted from the light emitting chip 2 along the front light emitting surface can directly penetrate through the first reflective layer 3, the diffusion layer 4 and the second reflective layer 5, and is emitted through the second reflective layer 5. And a part of which can reflect at least once in the reflecting mechanism formed between the first reflecting layer 3 and the second reflecting layer 5. For example, a part of the light may be reflected to the first reflective layer 3 through the second reflective layer 5 and the diffusion layer 4, and the angle of the reflected light may be changed due to the diffusion layer 4, so that the part of the light is reflected to the diffusion layer through the first reflective layer 3 again and then exits from the second reflective layer 5. Of course, there may be a portion of the light reflected twice and finally emitted from the second reflective layer 5 after three or even more reflections, and the specific light propagation process is similar to the foregoing process.
In this embodiment, the first reflective layer 3, the diffusion layer 4, and the second reflective layer 5 are sequentially covered on the front light-emitting surface of the light-emitting chip 2, so that the backlight structure in the prior art is effectively improved, and in some implementation processes, part of light emitted by the light-emitting chip 2 can be reflected between the first reflective layer 3 and the second reflective layer 5, so that light emitted by the chip is further scattered, and the light emitted by the backlight structure is more flexible.
In addition, compared with the traditional backlight source structure, the dot-matrix backlight source structure of the embodiment can omit structures such as a light guide plate, the size can be thinner, the structure of the product is simpler, the integration is better, and the cost is reduced.
In practical applications, the light emitting surface of the light emitting chip may not be provided with a diffusion layer as required. If the diffusion layer does not contain a luminescence conversion material such as fluorescent powder, the light emitting surface of the chip side is not provided with the diffusion layer. If the diffusion layer contains luminescent conversion materials such as fluorescent powder, the light emitting surface of the chip side is provided with the diffusion layer, so that the light emitting chromaticity can be more uniform, and the light emitted from the diffusion layer on the front surface and the side surface of the chip is converted white light.
In one example, the diffusion layer 4 includes only a positive diffusion region located above the light emitting chip positive light emitting surface. That is, as shown in fig. 1, in this example, a gap between adjacent light emitting chips 2 may be left empty, and no diffusion layer may be provided. The diffusion layer is arranged above the right light-emitting surface of the light-emitting chip, so that the material cost is further reduced.
In one example, the diffusion layer 4 includes a front diffusion region located above the front light emitting surface of the light emitting chip, and a side diffusion region located between adjacent light emitting chips. As another arrangement of the diffusion layer, as shown in fig. 2, the diffusion layer 4 includes a front diffusion region disposed above the front light emitting surface of the light emitting chips and a side diffusion region disposed between the adjacent light emitting chips. In this example, the diffusion layer 4 may be directly filled in the upper surface of the first reflective layer 3 and the gap between the adjacent light emitting chips by means of spraying or the like. The diffusion layers 4 are arranged between the adjacent light-emitting chips and above the right light-emitting surface of each light-emitting chip, so that the scattering effect of the diffusion layers can be improved, and the light mixing distance can be further reduced. Meanwhile, the spraying process is adopted, so that the production and manufacturing cost can be effectively reduced.
In one example, as shown in fig. 2, the second reflective layer 5 may be embedded in the diffusion layer 4, the second reflective layer 5 being disposed on the diffusion layer 4 at a position corresponding to the first reflective layer 3. The specific coverage area of the second reflective layer 5 can be set according to actual needs. For example, the area covered by the second reflective layer 5 may be larger than the area of the first reflective layer 3, and in the limit, as shown in fig. 3, the second reflective layer 5 completely covers the upper surface of the diffusion layer 4. In this example, a part of the light emitted by the light emitting chip 2 along the front light emitting surface may directly pass through the second reflective layer 5, and a part of the light may be reflected back to the first reflective layer by the second reflective layer 5, and due to the diffusion layer, the light emitted by the light emitting chip 2 may be further scattered, thereby improving the softness of the light emitted by the light emitting chip 2.
In one example, the thickness of the first reflective layer 3 is in the range of 10-30 μm, the thickness of the second reflective layer 5 is in the range of 10-30 μm, and the thickness of the diffusion layer is in the range of 100-200 μm. For example, the first reflective layer may have a thickness of 12 μm, 15 μm, 19 μm, 21 μm, 27 μm, etc., and the diffusion layer may have a thickness of 110 μm, 130 μm, 145 μm, 165 μm, 180 μm, etc. The thickness of the second reflective layer may be 12 μm, 14 μm, 17 μm, 23 μm, 25 μm, or the like. In this example, the ultrathin effect of the dot-matrix backlight structure can be achieved by designing the thicknesses of the first reflective layer, the diffusion layer and the second reflective layer.
In an example, the material of at least one of the first reflective layer 3 and the second reflective layer 5 comprises a reflective material and glue, and the reflective material is in a weight ratio range of 5% -15% of the glue mixture. The reflective material referred to in this example may be titanium dioxide, ceramic, etc. The reflective materials of the first reflective layer 3 and the second reflective layer 5 in this example may be different, for example, the first reflective layer 3 is mixed with titanium dioxide and glue, and the second reflective layer 5 is mixed with glue, for example, ceramic. The specific reflecting material accounts for 5-15% of the glue mixture by weight, and can be adjusted according to actual needs. For example, the proportion of titanium dioxide in the first reflective layer 3 is 6%, 9%, 11%, etc. The proportion of the ceramic in the second reflective layer 5 is 5%, 8%, 13%, etc. In the example, the reflecting materials such as titanium dioxide and ceramic are selected and mixed with the glue, so that the cost and the process complexity can be effectively reduced.
In one example, the material of the diffusion layer comprises a diffusion material and glue, and the diffusion material accounts for 5% -30% of the weight of the glue mixture. The diffusion material in the embodiment can be diffusion powder, and can also be formed by mixing doped fluorescent powder with glue, wherein the diffusion material accounts for 5-30% of the weight of the glue mixture and can be adjusted according to actual needs. For example, the proportion of the diffusion material in the diffusion layer is 7%, 15%, 23%, etc. The effect of reducing the light mixing distance can be achieved by mixing the conventional diffusion material and the glue in the example, and meanwhile, the conventional diffusion material is convenient to select and low in cost.
In an example, the backlight structure of the present embodiment can be obtained by the following processes:
preparing a first reflecting layer mixed glue aqueous solution, a second reflecting layer mixed glue aqueous solution and a diffusion layer mixed glue aqueous solution in required proportion;
then, arranging a first reflecting layer on the substrate and/or the light-emitting chip by spraying, silk-screen printing or 3D printing and the like;
then, arranging a diffusion layer on the first reflecting layer by adopting a steel mesh coating or mould pressing mode and the like;
and finally, arranging a second reflecting layer on the diffusion layer to obtain the backlight source structure of the embodiment.
According to the backlight source structure, the light mixing distance can be reduced by adding the diffusion powder into the silica gel, so that the light emitted by the backlight source structure is more uniform, the first reflection layer and the second reflection layer can form a part of light reflection mechanism to further scatter the light emitted by the chip, the light is more uniform and softer, therefore, a light guide plate or a diffusion plate is not used in the backlight source structure, the thickness of the whole backlight source structure can be reduced, compared with the traditional technical means, the thickness of the backlight source structure can be reduced by about 30% -50%, and ultra-thinning is realized.
Example two:
in order to reduce the thickness and ensure the display effect of the backlight structure, the present embodiment provides a dot-matrix backlight structure, as shown in fig. 1, including a substrate 1 and a plurality of light emitting chips 2 arranged on the substrate 1 and distributed in an array;
the backlight structure further comprises a first reflection layer 3 arranged on the light-emitting chip, and the first reflection layer 3 at least covers the front light-emitting surface of the light-emitting chip 2.
The backlight structure further comprises a diffusion layer 4 covering the first reflection layer 3, and a second reflection layer 5 arranged on the diffusion layer.
The covering referred to in this embodiment is partial covering or may be full covering, for example, in fig. 1, the first reflective layer 3 completely covers the front light emitting surface of the light emitting chip 2, and the diffusion layer 4 covers the upper surface of the first reflective layer 3, but may not cover the side surface of the first reflective layer 3.
Light rays from the light emitting chip 2 enter the diffusion layer 4 through the first reflection layer 3, are diffused by the diffusion layer 4, then enter the second reflection layer 5, and are emitted through the second reflection layer 5.
That is, in the present embodiment, a part of the light emitted from the light emitting chip 2 along the front light emitting surface can directly penetrate through the first reflective layer 3, the diffusion layer 4 and the second reflective layer 5, and is emitted through the second reflective layer 5. And a part of which can reflect at least once in the reflecting mechanism formed between the first reflecting layer 3 and the second reflecting layer 5. For example, a part of the light may be reflected to the first reflective layer 3 through the second reflective layer 5 and the diffusion layer 4, and the angle of the reflected light may be changed due to the diffusion layer 4, so that the part of the light is reflected to the diffusion layer through the first reflective layer 3 again and then exits from the second reflective layer 5. Of course, there may be a portion of the light reflected twice and finally emitted from the second reflective layer 5 after three or even more reflections, and the specific light propagation process is similar to the foregoing process.
In this embodiment, the first reflective layer 3, the diffusion layer 4, and the second reflective layer 5 are sequentially covered on the front light-emitting surface of the light-emitting chip 2, so that the backlight structure in the prior art is effectively improved, and in some implementation processes, part of light emitted by the light-emitting chip 2 can be reflected between the first reflective layer 3 and the second reflective layer 5, so that light emitted by the chip is further scattered, and the light emitted by the backlight structure is more flexible. In addition, compared with the traditional backlight source structure, the dot-matrix backlight source structure of the embodiment can omit structures such as a light guide plate, the size can be thinner, the structure of the product is simpler, the integration is better, and the cost is reduced.
Different from the first embodiment, in this embodiment, the first reflective layer 3 covers all light emitting surfaces of at least one of the light emitting chips, and the light emitting surfaces of the light emitting chips include a front light emitting surface and four side light emitting surfaces. As shown in fig. 4, in this example, the first reflective layer 3 completely covers all light emitting surfaces of the light emitting chip 2. The first reflecting layer 3 covers all the light-emitting surfaces of at least one light-emitting chip, so that the light emitted by the light-emitting chip can be reflected, and the reflecting effect is enhanced.
As another example, the first reflective layer 3 may cover at least a portion of the area between the light emitting chips 2. As shown in fig. 5, the positions of the intervals between the adjacent light emitting chips 2 on the substrate 1 are also covered with the first reflective layer 3. By adopting the mode, the complexity of the process can be further reduced, and the investment cost can be reduced.
In one example, the diffusion layer 4 includes a front diffusion region located above the front light emitting surface of the light emitting chip, and a side diffusion region located between adjacent light emitting chips.
As another arrangement of the diffusion layer, as shown in fig. 2, the diffusion layer 4 includes a front diffusion region disposed above the front light emitting surface of the light emitting chips and a side diffusion region disposed between the adjacent light emitting chips. In this example, the diffusion layer 4 may be directly filled in the upper surface of the first reflective layer 3 and the gap between the adjacent light emitting chips by means of spraying or the like. The diffusion layers 4 are arranged between the adjacent light-emitting chips and above the right light-emitting surface of each light-emitting chip, so that the scattering effect of the diffusion layers can be improved, and the light mixing distance can be further reduced.
In one example, the second reflective layer 5 may be embedded in the diffusion layer 4, and the second reflective layer 5 is disposed on the diffusion layer 4 at a position corresponding to the front light emitting surface of the light emitting chip 2. The specific coverage area of the second reflective layer 5 can be set according to actual needs. For example, the coverage area of the second reflective layer 5 may be larger than the area of the front light-emitting surface of the light-emitting chip 2, and in the limit, the second reflective layer 5 completely covers the upper surface of the diffusion layer 4. In this example, a part of the light emitted by the light emitting chip 2 along the front light emitting surface may directly pass through the second reflective layer 5, and a part of the light may be reflected back to the first reflective layer by the second reflective layer 5, and due to the diffusion layer, the light emitted by the light emitting chip 2 may be further scattered, thereby improving the softness of the light emitted by the light emitting chip 2.
In one example, the thickness of the first reflective layer 3 is in the range of 10-30 μm, the thickness of the second reflective layer 5 is in the range of 10-30 μm, and the thickness of the diffusion layer is in the range of 100-200 μm. For example, the first reflective layer may have a thickness of 11 μm, 14 μm, 17 μm, 22 μm, 25 μm, etc., and the diffusion layer may have a thickness of 105 μm, 120 μm, 135 μm, 155 μm, 170 μm, etc. The thickness of the second reflective layer may be 10 μm, 13 μm, 18 μm, 22 μm, 29 μm, or the like. In this example, the ultrathin effect of the dot-matrix backlight structure can be achieved by designing the thicknesses of the first reflective layer, the diffusion layer and the second reflective layer.
In one example, the thickness of the area of the first reflective layer 3 on the front light emitting surface of the light emitting chip 2 is smaller than the thickness of the area on the side light emitting surface of the light emitting chip 2. That is, the thickness of the first reflective layer 3 may be non-uniform, and the thickness of the first reflective layer 3 on the side light-emitting surface of the light-emitting chip 2 is thicker than the thickness of the first reflective layer 3 on the front light-emitting surface of the light-emitting chip 2. Of course, the specific thickness of the second reflective layer 5 may also be different from the thickness of the first reflective layer 3, and may be set according to actual conditions. The uneven thickness setting of first reflection stratum 3 can enlarge the light-emitting angle of chip to effectively weaken the positive light-emitting of chip.
In an example, the material of at least one of the first reflective layer 3 and the second reflective layer 5 comprises a reflective material and glue, and the reflective material is in a weight ratio range of 5% -15% of the glue mixture. The reflective material referred to in this example may be titanium dioxide, ceramic, etc. The reflective materials of the first reflective layer 3 and the second reflective layer 5 in this example may be different, for example, the first reflective layer 3 is mixed with titanium dioxide and glue, and the second reflective layer 5 is mixed with glue, for example, ceramic. The specific reflecting material accounts for 5-15% of the glue mixture by weight, and can be adjusted according to actual needs. For example, the proportion of titanium dioxide in the first reflective layer 3 is 2%, 7%, 10%, etc. The proportion of the ceramic in the second reflective layer 5 is 6%, 11%, 15%, etc. In the example, the reflecting materials such as titanium dioxide and ceramic are selected and mixed with the glue, so that the cost and the process complexity can be effectively reduced.
In one example, the material of the diffusion layer comprises a diffusion material and glue, and the diffusion material accounts for 5% -30% of the weight of the glue mixture. The diffusion material in the embodiment can be diffusion powder, can be formed by doping fluorescent powder and mixing the fluorescent powder with glue, further improves the scattering effect, and can be adjusted according to actual needs, wherein the diffusion material accounts for 5-30% of the weight of the glue mixture. For example, the proportion of the diffusion material in the diffusion layer is 7%, 15%, 23%, etc. The effect of reducing the light mixing distance can be achieved by mixing the conventional diffusion material and the glue in the example, and meanwhile, the conventional diffusion material is convenient to select and low in cost.
According to the backlight source structure, the light mixing distance can be reduced by adding the diffusion powder into the silica gel, so that the light emitted by the backlight source structure is more uniform, the first reflection layer and the second reflection layer can form a part of light reflection mechanism to further scatter the light emitted by the chip, the light is more uniform and softer, therefore, a light guide plate or a diffusion plate is not used in the backlight source structure, the thickness of the whole backlight source structure can be reduced, compared with the traditional technical means, the thickness of the backlight source structure can be reduced by about 30% -50%, and ultra-thinning is realized.
EXAMPLE III
In order to reduce the thickness and ensure the display effect of the backlight structure, the present embodiment provides a dot-matrix backlight structure, as shown in fig. 1, including a substrate 1 and a plurality of light emitting chips 2 arranged on the substrate 1 and distributed in an array;
the backlight structure further comprises a first reflection layer 3 arranged on the light-emitting chip, and the first reflection layer 3 at least covers the front light-emitting surface of the light-emitting chip 2.
The backlight structure further comprises a diffusion layer 4 covering the first reflection layer 3, and a second reflection layer 5 arranged on the diffusion layer.
The covering referred to in this embodiment is partial covering or may be full covering, for example, in fig. 1, the first reflective layer 3 completely covers the front light emitting surface of the light emitting chip 2, and the diffusion layer 4 covers the upper surface of the first reflective layer 3, but may not cover the side surface of the first reflective layer 3.
Light rays from the light emitting chip 2 enter the diffusion layer 4 through the first reflection layer 3, are diffused by the diffusion layer 4, then enter the second reflection layer 5, and are emitted through the second reflection layer 5.
That is, in the present embodiment, a part of the light emitted from the light emitting chip 2 along the front light emitting surface can directly penetrate through the first reflective layer 3, the diffusion layer 4 and the second reflective layer 5, and is emitted through the second reflective layer 5. And a part of which can reflect at least once in the reflecting mechanism formed between the first reflecting layer 3 and the second reflecting layer 5. For example, a part of the light may be reflected to the first reflective layer 3 through the second reflective layer 5 and the diffusion layer 4, and the angle of the reflected light may be changed due to the diffusion layer 4, so that the part of the light is reflected to the diffusion layer through the first reflective layer 3 again and then exits from the second reflective layer 5. Of course, there may be a portion of the light reflected twice and finally emitted from the second reflective layer 5 after three or even more reflections, and the specific light propagation process is similar to the foregoing process.
In this embodiment, the first reflective layer 3, the diffusion layer 4, and the second reflective layer 5 are sequentially covered on the front light-emitting surface of the light-emitting chip 2, so that the backlight structure in the prior art is effectively improved, and in some implementation processes, part of light emitted by the light-emitting chip 2 can be reflected between the first reflective layer 3 and the second reflective layer 5, so that light emitted by the chip is further scattered, and the light emitted by the backlight structure is more flexible. In addition, compared with the traditional backlight source structure, the dot-matrix backlight source structure of the embodiment can omit structures such as a light guide plate, the size can be thinner, the structure of the product is simpler, the integration is better, and the cost is reduced.
Unlike the first and second embodiments, as shown in fig. 6, the backlight structure in the present embodiment may be a combination of two or more structures of the first and second embodiments. For example, in fig. 6, a part of the first reflective layer 3 completely wraps a part of the light emitting chip 2, and a part of the first reflective layer 3 covers only a part of the front light emitting surface of the light emitting chip 2. The diffusion layer 4 is filled between the first reflection layer 3 and the second reflection layer 5, and the second reflection layer 5 may completely cover the diffusion layer 4. As shown in fig. 7, the second reflective layer 5 may also be disposed on the diffusion layer 4 to completely cover all the front light-emitting surfaces of the light-emitting chip 2.
As another embodiment, as shown in fig. 8, a portion of the first reflective layer 3 may be disposed to cover only a portion of the front light emitting surface of the light emitting chips 2, a portion of the first reflective layer 3 completely covers a portion of the light emitting chips 2, and a portion of the first reflective layer 3 is further disposed in the space between the light emitting chips 2. The customized production can be realized by the structural combination and collocation mode, and meanwhile, the thickness of the first reflecting layer, the diffusion layer and the second reflecting layer which cover the front light-emitting surface of the chip is controllable, so that the size can be thinner.
In one example, the thickness of the first reflective layer 3 is in the range of 10-30 μm, the thickness of the second reflective layer 5 is in the range of 10-30 μm, and the thickness of the diffusion layer is in the range of 100-200 μm. For example, the first reflective layer may have a thickness of 12 μm, 15 μm, 19 μm, 21 μm, 27 μm, etc., and the diffusion layer may have a thickness of 110 μm, 130 μm, 145 μm, 165 μm, 180 μm, etc. The thickness of the second reflective layer may be 12 μm, 14 μm, 17 μm, 23 μm, 25 μm, or the like. In this example, the ultrathin effect of the dot-matrix backlight structure can be achieved by designing the thicknesses of the first reflective layer, the diffusion layer and the second reflective layer.
In one example, the thickness of the area of the first reflective layer 3 on the front light emitting surface of the light emitting chip 2 is smaller than the thickness of the area on the side light emitting surface of the light emitting chip 2. That is, the thickness of the first reflective layer 3 may be non-uniform, and the thickness of the first reflective layer 3 on the side light-emitting surface of the light-emitting chip 2 is thicker than the thickness of the first reflective layer 3 on the front light-emitting surface of the light-emitting chip 2. Of course, the specific thickness of the second reflective layer 5 may also be different from the thickness of the first reflective layer 3, and may be set according to actual conditions. The uneven thickness setting of first reflection stratum 3 can enlarge the light-emitting angle of chip to effectively weaken the positive light-emitting of chip.
In an example, the material of at least one of the first reflective layer 3 and the second reflective layer 5 comprises a reflective material and glue, and the reflective material is in a weight ratio range of 5% -15% of the glue mixture. The reflective material referred to in this example may be titanium dioxide, ceramic, etc. The reflective materials of the first reflective layer 3 and the second reflective layer 5 in this example may be different, for example, the first reflective layer 3 is mixed with titanium dioxide and glue, and the second reflective layer 5 is mixed with glue, for example, ceramic. The specific reflecting material accounts for 5-15% of the glue mixture by weight, and can be adjusted according to actual needs. For example, the proportion of titanium dioxide in the first reflective layer 3 is 6%, 9%, 11%, etc. The proportion of the ceramic in the second reflective layer 5 is 5%, 8%, 13%, etc. In the example, the reflecting materials such as titanium dioxide and ceramic are selected and mixed with the glue, so that the cost and the process complexity can be effectively reduced.
In one example, the diffusion layer is formed by mixing a diffusion material and glue, and the diffusion material accounts for 5% -30% of the weight of the glue mixture. The diffusion material in the embodiment can be diffusion powder, and can be formed by doping fluorescent powder in the diffusion powder and mixing the fluorescent powder with glue, wherein the diffusion material accounts for 5-30% of the weight of the glue mixture and can be adjusted according to actual needs. For example, the proportion of the diffusion material in the diffusion layer is 7%, 15%, 23%, etc. The effect of reducing the light mixing distance can be achieved by mixing the conventional diffusion material and the glue in the example, and meanwhile, the conventional diffusion material is convenient to select and low in cost.
According to the backlight source structure, the light mixing distance can be reduced by adding the diffusion powder into the silica gel, so that the light emitted by the backlight source structure is more uniform, the first reflection layer and the second reflection layer can form a part of light reflection mechanism to further scatter the light emitted by the chip, the light is more uniform and softer, therefore, a light guide plate or a diffusion plate is not used in the backlight source structure, the thickness of the whole backlight source structure can be reduced, compared with the traditional technical means, the thickness of the backlight source structure can be reduced by about 30% -50%, and ultra-thinning is realized.
The present embodiment further provides a display device, which includes the dot matrix backlight structure in the foregoing embodiments.
The foregoing is a more detailed description of embodiments of the present invention, and the present invention is not to be considered limited to such descriptions. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (12)
1. A dot-matrix backlight source structure is characterized by comprising a substrate and a plurality of light-emitting chips which are arranged on the substrate and distributed in an array;
the backlight source structure also comprises a first reflecting layer arranged on the light-emitting chip, and the first reflecting layer at least covers the front light-emitting surface of the light-emitting chip;
the backlight source structure also comprises a diffusion layer covering the first reflection layer and a second reflection layer arranged on the diffusion layer;
light rays from the light-emitting chip are emitted into the diffusion layer through the first reflection layer, are diffused by the diffusion layer, then are emitted to the second reflection layer, and are emitted through the second reflection layer.
2. The lattice backlight structure of claim 1, wherein the first reflective layer covers all light emitting surfaces of at least one of the light emitting chips.
3. The lattice backlight structure of claim 1, wherein the first reflective layer covers at least a portion of an area between the light emitting chips.
4. The lattice backlight structure of claim 2, wherein the thickness of the first reflective layer in the area on the front light-emitting surface of the light-emitting chip is smaller than the thickness of the area on the side light-emitting surface of the light-emitting chip.
5. The lattice backlight structure of any one of claims 1-4, wherein the diffusion layer comprises a front diffusion region over the front light emitting surface of the light emitting chips and a side diffusion region between adjacent light emitting chips.
6. The backlight structure according to any one of claims 1 to 4, wherein the second reflective layer includes a first reflective region located above a front light-emitting surface of the light-emitting chips and a second reflective region located between adjacent light-emitting chips.
7. The lattice backlight structure of any one of claims 1-4, wherein the material of at least one of the first reflective layer and the second reflective layer comprises a reflective material and glue, and the reflective material is in a weight ratio of the glue mixture ranging from 5% to 15%.
8. The lattice backlight structure of claim 7, wherein the materials of the first and second reflective layers each comprise a reflective material and glue, and the second reflective layer has a larger reflective material fraction than the first reflective layer.
9. The lattice backlight structure of any one of claims 1-4, wherein the material of the diffusion layer comprises a diffusion material and glue, and the diffusion material is in a weight ratio of the glue mixture ranging from 5% to 30%.
10. The lattice backlight structure of claim 9, wherein the material of the diffusion layer further comprises phosphor.
11. The dot matrix backlight structure of any one of claims 1-4, wherein the thickness of the first reflective layer is in the range of 10-30 μm, the thickness of the second reflective layer is in the range of 10-30 μm, and the thickness of the diffusion layer is in the range of 100-200 μm.
12. A display device comprising the lattice backlight structure of any one of claims 1-11.
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| CN202110677484.3A CN113253519A (en) | 2021-06-18 | 2021-06-18 | Dot-matrix backlight source structure and display device |
| PCT/CN2021/119458 WO2022057937A1 (en) | 2020-09-21 | 2021-09-18 | Substrate, and led light source assembly and manufacturing method therefor |
| EP21868759.8A EP4216275A4 (en) | 2020-09-21 | 2021-09-18 | SUBSTRATE AND LED LIGHT SOURCE ARRANGEMENT AND MANUFACTURING METHOD THEREFOR |
| US18/027,223 US20230411574A1 (en) | 2020-09-21 | 2021-09-18 | Substrate, led light source assembly and manufacturing methods therefor |
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| CN202110677484.3A CN113253519A (en) | 2021-06-18 | 2021-06-18 | Dot-matrix backlight source structure and display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022057937A1 (en) * | 2020-09-21 | 2022-03-24 | 深圳市聚飞光电股份有限公司 | Substrate, and led light source assembly and manufacturing method therefor |
| CN114447192A (en) * | 2022-01-20 | 2022-05-06 | 东莞市中麒光电技术有限公司 | Display module manufacturing method, display module and display screen |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102483539A (en) * | 2009-08-27 | 2012-05-30 | Lg电子株式会社 | Optical assembly, backlight unit and display apparatus thereof |
| CN108242442A (en) * | 2016-12-26 | 2018-07-03 | 日亚化学工业株式会社 | light emitting device |
| CN215526295U (en) * | 2021-06-18 | 2022-01-14 | 惠州市聚飞光电有限公司 | Dot-matrix backlight source structure and display device |
-
2021
- 2021-06-18 CN CN202110677484.3A patent/CN113253519A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102483539A (en) * | 2009-08-27 | 2012-05-30 | Lg电子株式会社 | Optical assembly, backlight unit and display apparatus thereof |
| CN108242442A (en) * | 2016-12-26 | 2018-07-03 | 日亚化学工业株式会社 | light emitting device |
| CN215526295U (en) * | 2021-06-18 | 2022-01-14 | 惠州市聚飞光电有限公司 | Dot-matrix backlight source structure and display device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022057937A1 (en) * | 2020-09-21 | 2022-03-24 | 深圳市聚飞光电股份有限公司 | Substrate, and led light source assembly and manufacturing method therefor |
| CN114447192A (en) * | 2022-01-20 | 2022-05-06 | 东莞市中麒光电技术有限公司 | Display module manufacturing method, display module and display screen |
| CN114447192B (en) * | 2022-01-20 | 2023-09-19 | 东莞市中麒光电技术有限公司 | Display module manufacturing method, display module and display screen |
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