CN113258443B - Vertical cavity surface emitting laser and manufacturing method and application thereof - Google Patents
Vertical cavity surface emitting laser and manufacturing method and application thereof Download PDFInfo
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- CN113258443B CN113258443B CN202110798123.4A CN202110798123A CN113258443B CN 113258443 B CN113258443 B CN 113258443B CN 202110798123 A CN202110798123 A CN 202110798123A CN 113258443 B CN113258443 B CN 113258443B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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Abstract
The invention provides a vertical cavity surface emitting laser and a manufacturing method and application thereof, comprising the following steps: a substrate; a first reflective layer disposed on the substrate; an active layer disposed on the first reflective layer, for emitting a laser beam; a second reflective layer disposed on the active layer; wherein the second reflecting layer at least comprises an optical scattering layer, the laser beam passes through the optical scattering layer to form a far-field light spot, and the optical scattering layer scatters the laser beam at the edge into the central area of the far-field light spot; wherein the optical scattering layer comprises optical scattering particles thereon, the optical scattering particles comprising undulating interfaces; wherein the roughness of the optical scattering layer is greater than the roughness of the first reflective layer. The vertical cavity surface emitting laser provided by the invention can obtain far-field light spots with uniform energy distribution.
Description
Technical Field
The invention relates to the technical field of laser, in particular to a vertical cavity surface emitting laser and a manufacturing method and application thereof.
Background
Vertical Cavity Surface Emitting Lasers (VCSELs) are developed on the basis of gallium arsenide semiconductor materials, are different from other light sources such as LEDs (light Emitting diodes) and LDs (Laser diodes), have the advantages of small volume, circular output light spots, single longitudinal mode output, small threshold current, low price, easy integration into large-area arrays and the like, and are widely applied to the fields of optical communication, optical interconnection, optical storage and the like.
At present, light spots emitted by a vertical cavity surface emitting laser generally have uneven spatial distribution (far field), and the uneven light spots cannot directly apply the vertical cavity surface emitting laser to the technologies of TOF measurement, safety camera shooting and the like.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention provides a vertical cavity surface emitting laser, which can obtain a far-field spot with uniform energy distribution, and thus can be directly applied to TOF measurement, and a method for manufacturing the same.
To achieve the above object, the present invention provides a vertical cavity surface emitting laser including:
a substrate;
a first reflective layer disposed on the substrate;
an active layer disposed on the first reflective layer, for emitting a laser beam;
a second reflective layer disposed on the active layer;
wherein the second reflecting layer at least comprises an optical scattering layer, the laser beam passes through the optical scattering layer to form a far-field light spot, and the optical scattering layer scatters the laser beam at the edge into the central area of the far-field light spot;
wherein the optical scattering layer comprises optical scattering particles thereon, the optical scattering particles comprising undulating interfaces;
wherein the roughness of the optical scattering layer is greater than the roughness of the first reflective layer.
Further, the second reflecting layer comprises a plurality of optical scattering layers, and the plurality of optical scattering layers are stacked or spaced.
Further, the density of the optical scattering particles on the plurality of optical scattering layers is different.
Further, the liquid crystal display device further comprises a first electrode, wherein the first electrode is arranged on the second reflecting layer.
Further, the display device further comprises a second electrode, and the second electrode is arranged at the bottom of the substrate.
Further, the second reflective layer further includes a current confinement layer, and a light exit hole is defined through the current confinement layer.
Further, the optical scattering particles are positioned in the light-emitting hole.
Further, the present invention also provides a method for manufacturing a vertical cavity surface emitting laser, including:
providing a substrate;
forming a first reflective layer on the substrate;
forming an active layer on the first reflective layer;
forming a second reflective layer on the active layer;
the second reflecting layer at least comprises an optical scattering layer, laser beams pass through the optical scattering layer to form a far-field light spot, and the optical scattering layer scatters the laser beams at the edge into the central area of the far-field light spot;
wherein the optical scattering layer comprises optical scattering particles thereon, and the optical scattering particles comprise undulating interfaces.
Further, the growth temperature of the first reflecting layer is 620-720 ℃, and the growth rate of the first reflecting layer is 0.5-3.5 microns/hour.
Further, the growth temperature of the second reflecting layer is 700-750 ℃, and the growth rate of the second reflecting layer is 1.5-4.5 microns/hour.
Further, the present invention also proposes a laser apparatus, which includes:
a substrate;
a light emitting element disposed on the substrate, the light emitting element including at least one vertical cavity surface emitting laser, the vertical cavity surface emitting laser including:
a substrate;
a first reflective layer disposed on the substrate;
an active layer disposed on the first reflective layer, for emitting a laser beam;
a second reflective layer disposed on the active layer;
wherein the second reflecting layer at least comprises an optical scattering layer, the laser beam passes through the optical scattering layer to form a far-field light spot, and the optical scattering layer scatters the laser beam at the edge into the central area of the far-field light spot;
wherein the optical scattering layer comprises optical scattering particles thereon, the optical scattering particles comprising undulating interfaces;
wherein the roughness of the optical scattering layer is greater than the roughness of the first reflective layer.
In summary, the invention provides a vertical cavity surface emitting laser and a manufacturing method and application thereof, the invention firstly forms a first reflective layer on a substrate, and when the first reflective layer grows, the invention adopts lower growth temperature and lower growth rate, thereby obtaining the first reflective layer with a smooth surface; then, an active layer is formed on the first reflective layer using the same growth temperature and growth rate, and then a second reflective layer is formed on the active layer using a higher growth temperature and growth rate, and at least one optical scattering layer is formed in the second reflective layer due to the higher growth temperature and growth rate of the second reflective layer, the optical scattering layer including a large number of optical scattering particles thereon, and the optical scattering particles may include a wavy interface. Meanwhile, due to the existence of the optical scattering particles, the roughness of the optical scattering layer may be greater than that of the first reflective layer. When the active layer emits laser beams, the laser beams form far-field light spots outside after passing through the optical scattering layer, and meanwhile, the laser beams at the edges are scattered to the central area of the far-field light spots after passing through the optical scattering layer, so that the far-field light spots with uniformly distributed energy can be obtained, and therefore the vertical cavity surface emitting laser can be directly applied to TOF measurement.
In summary, the optical scattering layer is formed in the second reflective layer, and the optical scattering layer is relatively rough, so that the optical scattering layer can play a role in scattering laser beams. In the invention, the growth parameters of the second reflecting layer are adjusted in the growth process, so that the manufacturing method of the laser is low in cost.
Drawings
FIG. 1: the invention relates to a flow chart of a manufacturing method of a vertical cavity surface emitting laser.
FIG. 2: the invention relates to a structure diagram corresponding to steps S1-S4.
FIG. 3: the second reflective layer of the present invention comprises a schematic illustration of an optical scattering layer.
FIG. 4: the present invention is a structural diagram corresponding to step S5.
FIG. 5: the structure of the current confinement layer is formed in the present invention.
FIG. 6: the present invention is a structural diagram corresponding to step S6.
FIG. 7: the present invention is a structural diagram corresponding to step S7.
FIG. 8: the optical scattering layer plays a role in scattering laser beams.
FIG. 9: the invention relates to a microscopic image of a second reflecting layer with a smooth surface and a far-field light spot test image.
FIG. 10: the invention relates to a microscopic image of a second reflecting layer with a rough surface and a far-field light spot test image.
FIG. 11: the structure of the light emitting device of the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
As shown in fig. 1, this embodiment provides a method for manufacturing a vertical cavity surface emitting laser, which can form a far-field spot with uniform energy distribution, so that the vertical cavity surface emitting laser can be directly applied to TOF measurement or security camera shooting.
As shown in fig. 1, the present embodiment proposes a method for manufacturing a vertical cavity surface emitting laser, including:
s1: providing a substrate;
s2: forming a first reflective layer on the substrate;
s3: forming an active layer on the first reflective layer;
s4: forming a second reflective layer on the active layer;
s5: etching the second reflecting layer, the active layer and the first reflecting layer to form a mesa structure;
s6: forming an insulating layer on the mesa structure;
s7: forming a first electrode on the insulating layer, the first electrode being connected to the second reflective layer, and forming a second electrode on the substrate.
As shown in fig. 2, in steps S1-S4, a substrate 101 is provided, a first reflective layer 102 is formed on the substrate 101, an active layer 103 is formed on the first reflective layer 102, and a second reflective layer 104 is formed on the active layer 103. In this embodiment, the substrate 101 may be any material suitable for forming a vertical cavity surface emitting laser, such as gallium arsenide (GaAs). The substrate 101 may be an N-type doped semiconductor substrate, or a P-type doped semiconductor substrate, and the doping may reduce the contact resistance of the ohmic contact between the subsequently formed electrode and the semiconductor substrate, in this embodiment, the substrate 101 is, for example, an N-type doped semiconductor substrate. In some embodiments, the substrate 101 may be a sapphire substrate or other material substrate, or at least the top surface of the substrate 101 may be comprised of one of silicon, gallium arsenide, silicon carbide, aluminum nitride, gallium nitride.
As shown in fig. 2, in the present embodiment, the first reflective layer 102 may be formed by laminating two materials having different refractive indexes, for example, AlGaAs and GaAs, or AlGaAs of high aluminum composition and AlGaAs of low aluminum composition, the first reflective layer 102 may be an N-type mirror, and the first reflective layer 102 may be an N-type bragg mirror. In this embodiment, for example, the growth temperature and the growth rate of the first reflective layer 102 are relatively low, the growth temperature of the first reflective layer 102 is, for example, 620-720 ℃, for example, 640 ℃, and the growth rate of the first reflective layer 102 is, for example, 0.5-3.5 microns/hour, for example, 1.0 micron/hour. Since the growth rate and growth temperature of the first reflective layer 102 are low, the surface of the first reflective layer 102 is relatively flat, that is, there are fewer defects on the surface of the first reflective layer 102. After the first reflective layer 102 is formed, the active layer 103 is grown on the first reflective layer 102 using the same growth parameters. The active layer 103 includes a quantum well composite structure, which is formed by stacking GaAs and AlGaAs, or InGaAs and AlGaAs materials, and the active layer 103 serves to convert electric energy into optical energy, that is, the active layer 103 serves to emit a laser beam.
As shown in fig. 2, in the present embodiment, the second reflective layer 104 may include a stack of two materials having different refractive indexes, i.e., AlGaAs and GaAs, or AlGaAs with a high aluminum composition and AlGaAs with a low aluminum composition, the second reflective layer 104 may be a P-type mirror, and the second reflective layer 104 may be a P-type bragg mirror. The present embodiment employs a higher growth temperature and growth rate to grow the second reflective layer 104 on the active layer 103, and the growth temperature of the second reflective layer 104 is, for example, 700 ℃ and 750 ℃, for example, 730 ℃. The growth rate of the second reflective layer 104 is, for example, 1.5-4.5 microns/hour, such as 2.0 or 3.0 microns/hour. The first and second reflective layers 102 and 104 are used to enhance the reflection of light generated by the active layer 103 and then exit from the surface of the second reflective layer 104 or the first reflective layer 102.
As shown in fig. 3, in the present embodiment, since the growth rate and the growth temperature of the second reflective layer 104 are higher, at least one optical scattering layer 1042 is formed in the second reflective layer 104. The second reflective layer 104 includes, for example, a plurality of semiconductor layers 1041, and at least one optical scattering layer 1042 is grown between the semiconductor layers 1041. The optical scattering layer 1042 includes optical scattering particles thereon, and the optical scattering particles may be undulating interfaces or surfaces during growth. Due to the existence of the relief interfaces, the roughness of the optical scattering layer 1042 is larger than that of the first reflective layer 102. Meanwhile, the optical scattering particles can scatter the laser beam, so that a far-field light spot with uniform energy distribution is obtained.
As shown in fig. 3, one optical scattering layer 1042 is shown in fig. 3, but the second reflective layer 104 may also include more optical scattering layers 1042, and the optical scattering layers 1042 are stacked or spaced apart. When the optical scattering layers 1042 are spaced apart, two adjacent optical scattering layers 1042 are separated by a semiconductor layer 1041. The density of the optical scattering particles on the optical scattering layers 1042 may be the same or may vary, for example, in the direction from bottom to top, the density of the optical scattering particles on the optical scattering layers 1042 is gradually decreased or gradually increased, and since the density of the optical scattering particles on the optical scattering layers 1042 is varied, it is advantageous to scatter the laser beam. In some embodiments, the density of the optically scattering particles on the optically scattering layers 1042 can also be varied arbitrarily.
In some embodiments, the first reflective layer 102, the active layer 103, and the second reflective layer 104 may be formed, for example, by a chemical vapor deposition method.
In some embodiments, a buffer layer is further formed between the substrate 101 and the first reflective layer 102 to effectively release stress and dislocation filtering between the substrate 101 and the first reflective layer 102.
In some embodiments, the sum of the thicknesses of the first reflective layer 102, the active layer 103, and the second reflective layer 104 is between 8-10 microns.
In some embodiments, the first reflective layer 102 or the second reflective layer 104 comprises a series of alternating layers of materials of different refractive indices, wherein the effective optical thickness of each alternating layer (the layer thickness times the layer refractive index) is an odd integer multiple of the operating wavelength of the quarter-wavelength VCSEL, i.e., the effective optical thickness of each alternating layer is a quarter of an odd integer multiple of the operating wavelength of the VCSEL. Suitable dielectric materials for forming the alternating layers of the first reflective layer 102 or the second reflective layer 104 include tantalum oxide, titanium oxide, aluminum oxide, titanium nitride, silicon nitride, and the like. Suitable semiconducting materials for forming the alternating layers of the first reflective layer 102 or the second reflective layer 104 include gallium nitride, aluminum nitride, and aluminum gallium nitride. However, in some embodiments, the first reflective layer 102 and the second reflective layer 104 may be formed of other materials.
In some embodiments, the active layer 103 may include one or more nitride semiconductor layers including one or more quantum well layers or one or more quantum dot layers sandwiched between respective pairs of barrier layers, thereby exciting more laser beams.
As shown in fig. 4 to 5, after the first reflective layer 102, the active layer 103 and the second reflective layer 104 are formed, a photoresist layer is then formed on the second reflective layer 104, and then the second reflective layer 104, the active layer 103 and the first reflective layer 102 are etched according to the photoresist layer, thereby forming a mesa structure 105 on the substrate 101 in step S5. When the etching is performed, the entire thickness of the first reflective layer 102 is not completely etched, that is, only a partial thickness of the first reflective layer 102 is etched. After the mesa structure 105 is formed, the sidewalls of the mesa structure 105 may then be oxidized to form at least two current confinement layers 106 within the second reflective layer 104, the current confinement layers 106 in contact with the two-sided mesa structure 105 form a ring structure, and a light emitting hole or an exit hole is defined by the current confinement layers 106. The current confinement layer 106 includes one of an air pillar type current confinement structure, an ion implantation type current confinement structure, a buried heterojunction type current confinement structure, and an oxidation confinement type current confinement structure, which is used in the present embodiment. It should be noted that the optical scattering particles on the optical scattering layer 1042 are located in the light emitting hole, that is, located on the light emitting path of the laser beam, so as to scatter the laser beam.
As shown in fig. 6, in step S6, after the mesa structure is formed, an insulating layer 107 is then formed on the mesa structure, the insulating layer 107 completely covers the mesa structure, and then a portion of the insulating layer 107 on the second reflective layer 104 is removed by an etching process, so that two openings 108 are formed on the top of the second reflective layer 104, the two openings 108 expose the second reflective layer 104, and the first electrode may be connected to the second reflective layer 104 through the two openings 108. It should be noted that the two openings 108 form an annular structure. The material of the insulating layer 107 may be silicon nitride or silicon oxide or other insulating materials, the thickness of the insulating layer 107 may be 100-300nm, and the insulating layer 107 may protect the current confinement layer 106. In this embodiment, the insulating layer 107 may be formed, for example, by chemical vapor deposition.
In some embodiments, an ohmic contact layer may be further formed on the second reflective layer 104, and the opening 108 exposes the ohmic contact layer, so that the first electrode may be connected to the second reflective layer 104 through the ohmic contact layer, thereby reducing a contact resistance of the ohmic contact between the first electrode and the second reflective layer 104.
As shown in fig. 7, in step S7, after the insulating layer 107 is formed, the first electrode 109 is then formed on the mesa structure and the second electrode 110 is formed on the back surface of the substrate 101, for example, by deposition, to form the first electrode 109 and the second electrode 110. The first electrode 109 is further connected to the second reflective layer 104 through the opening, and the first electrode 109 extends along the insulating layer 107 to the sidewall of the mesa structure, and the first electrodes 109 at both ends may also form an annular structure, and the first electrode 109 is not disposed in the light exit hole, that is, the first electrode 109 is disposed at the periphery of the light exit hole, so that the first electrode 109 does not block the laser beam. In the present embodiment, the second electrode 110 is further formed on the back surface or the bottom of the substrate 101, the material of the first electrode 109 may include one or a combination of Au metal, Ag metal, Pt metal, Ge metal, Ti metal and Ni metal, and the material of the second electrode 110 may include one or a combination of Au metal, Ag metal, Pt metal, Ge metal, Ti metal and Ni metal.
As shown in fig. 3 and fig. 7 to 8, when a voltage is applied to the first electrode 109 and the second electrode 110, the active layer 103 excites a laser beam, and when the laser beam passes through the second reflective layer 104, that is, after passing through the optical scattering layer 1042, a far-field spot 111 is formed on the outside, and due to the effect of the optical scattering particles, the laser beam at the edge is scattered into the central region of the far-field spot 111, so that the energy distribution of the far-field spot 111 is more uniform, that is, the energy of the central region and the energy of the edge region of the far-field spot 111 are substantially the same. Meanwhile, as can be seen from the energy distribution curve in fig. 8, the energy distribution of the far-field spot 111 is more uniform, i.e., the energy in the central region and the energy in the edge region are substantially the same. It should be noted that when the laser is a high-power device, the laser beam emitted from the active layer 103 is concentrated in the edge region of the light emitting hole, so that when the optical scattering particles are in the light emitting hole or in the edge region of the light emitting hole, the edge laser beam can be scattered to the central region of the far-field light spot, thereby playing a role in adjusting the far-field energy distribution.
As shown in fig. 8 to 10, (a) in fig. 9 shows microscope pictures of the second reflecting layer with a flat surface (i.e., the second reflecting layer does not include the optical scattering layer), and (b) in fig. 9 shows test pictures of the laser for obtaining a far-field spot. Fig. 10 (a) shows a microscope photograph of the second reflective layer having a rough surface (i.e., the second reflective layer includes an optical scattering layer), and fig. 10 (b) shows a test chart of the laser for obtaining a far-field spot. As can be seen by comparing fig. 9-10, the energy of the edge area of the far-field spot in fig. 9 is high, and the energy of the central area is low, i.e. the energy of the edge area is greater than that of the central area, i.e. the energy distribution of the far-field spot in fig. 9 is not uniform. The energy of the edge region of the far-field spot in fig. 10 is substantially identical to the energy of the central region, that is, the energy distribution of the far-field spot in fig. 10 is uniform, thereby illustrating that the energy distribution of the far-field spot of the laser can be made more uniform when the optical scattering layer is formed in the second reflective layer 104, that is, when the optical scattering particles are formed in the second reflective layer 104. When the lasers in fig. 9 and 10 are high power lasers, the energy distribution of the far field spots in fig. 9 is more uneven and the energy distribution of the far field spots in fig. 10 is relatively even. As can be seen from fig. 10, the optical scattering particles may be an undulating interface on the optical scattering layer, and the roughness of the optical scattering layer may be increased due to the undulating interface, so that the optical scattering layer may perform a scattering function. In this embodiment, since the optical scattering layer can be formed during the growth process of the second reflective layer 104, a diffuser does not need to be disposed on the second reflective layer 104, and thus the manufacturing method of the laser is simpler and has strong feasibility of implementation.
As shown in fig. 7, this embodiment forms an optical scattering layer in the second reflective layer 104, and the laser beam emitted from the active layer 103 exits through the second reflective layer 104, thereby obtaining a far-field optical field with uniformly distributed energy. In some embodiments, an optical scattering layer may also be formed in the first reflective layer 102, and the laser beam emitted by the active layer 103 exits through the first reflective layer 102 and the substrate 101, so as to obtain a far-field optical field with uniformly distributed energy.
As shown in fig. 11, the present embodiment also proposes a light emitting device 10, where the light emitting device 10 includes a substrate 11 and a light emitting element 12 disposed on the substrate 11. The light emitting element 12 includes at least one vertical cavity surface emitting laser 13 therein, the vertical cavity surface emitting laser 13 can emit a far field spot with uniform energy distribution, and the structure of the vertical cavity surface emitting laser 13 can refer to the above description. The light emitting means 10 may be a laser device, for example a lidar.
In the present embodiment, the vertical cavity surface emitting laser and the light emitting device 10 using the same can be used as various light sources for light emission, and an array of vertical cavity surface emitting lasers can also be used as a multi-beam light source. The vertical cavity surface emitting laser in the present embodiment can be used in image forming apparatuses including laser beam printers, copiers, and facsimile machines.
The vertical cavity surface emitting laser provided by the embodiment can be used for laser radar, infrared cameras, 3D depth recognition detectors and image signal processing. In some embodiments, the VCSEL may also be used as a light source in optical communications, such as a laser in an optical transceiver module of a fiber optic module.
In summary, the invention provides a vertical cavity surface emitting laser and a manufacturing method and application thereof, the invention firstly forms a first reflective layer on a substrate, and when the first reflective layer grows, the invention adopts lower growth temperature and lower growth rate, thereby obtaining the first reflective layer with a smooth surface; then, an active layer is formed on the first reflective layer using the same growth temperature and growth rate, and then a second reflective layer is formed on the active layer using a higher growth temperature and growth rate, and at least one optical scattering layer is formed in the second reflective layer due to the higher growth temperature and growth rate of the second reflective layer, the optical scattering layer including a large number of optical scattering particles thereon, and the optical scattering particles may include a wavy interface. Meanwhile, due to the existence of the optical scattering particles, the roughness of the optical scattering layer may be greater than that of the first reflective layer. When the active layer emits laser beams, the laser beams form far-field light spots outside after passing through the optical scattering layer, and meanwhile, the laser beams at the edges are scattered to the central area of the far-field light spots after passing through the optical scattering layer, so that the far-field light spots with uniform energy distribution can be obtained, and therefore the vertical cavity surface emitting laser can be directly applied to TOF measurement.
In summary, the optical scattering layer is formed in the second reflective layer, and the optical scattering layer is relatively rough, so that the optical scattering layer can play a role in scattering laser beams. In the invention, the growth parameters of the second reflecting layer are adjusted in the growth process, so that the manufacturing method of the laser is low in cost.
The above description is only a preferred embodiment of the present application and a description of the applied technical principle, and it should be understood by those skilled in the art that the scope of the present invention related to the present application is not limited to the technical solution of the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above features with (but not limited to) technical features having similar functions disclosed in the present application.
Other technical features than those described in the specification are known to those skilled in the art, and are not described herein in detail in order to highlight the innovative features of the present invention.
Claims (10)
1. A vertical cavity surface emitting laser, comprising:
a substrate;
a first reflective layer disposed on the substrate;
an active layer disposed on the first reflective layer, for emitting a laser beam;
a second reflective layer disposed on the active layer;
wherein the second reflecting layer comprises a plurality of optical scattering layers, the laser beam passes through the optical scattering layers to form a far-field light spot, the optical scattering layers scatter the laser beam at the edge into the central area of the far-field light spot, and the optical scattering layers are stacked or arranged at intervals;
wherein the optical scattering layer comprises optical scattering particles thereon, the optical scattering particles comprising undulating interfaces;
wherein the roughness of the optical scattering layer is greater than the roughness of the first reflective layer.
2. A vertical cavity surface emitting laser according to claim 1, wherein densities of said optical scattering particles on a plurality of said optical scattering layers are different.
3. A vertical cavity surface emitting laser according to claim 1, further comprising a first electrode provided on said second reflective layer.
4. A vertical cavity surface emitting laser according to claim 1, further comprising a second electrode provided at a bottom of said substrate.
5. A vertical cavity surface emitting laser according to claim 1, further comprising a current confinement layer within said second reflective layer, an exit aperture being defined through said current confinement layer.
6. A vertical cavity surface emitting laser according to claim 5, wherein said optical scattering particles are located within said exit pupil.
7. A method of manufacturing a vertical cavity surface emitting laser, comprising:
providing a substrate;
forming a first reflective layer on the substrate;
forming an active layer on the first reflective layer;
forming a second reflective layer on the active layer;
the second reflecting layer comprises a plurality of optical scattering layers, laser beams pass through the optical scattering layers to form far-field light spots, the optical scattering layers scatter the laser beams at the edges into the central area of the far-field light spots, and the optical scattering layers are arranged in a stacking mode or at intervals;
wherein the optical scattering layer comprises optical scattering particles thereon, and the optical scattering particles comprise undulating interfaces.
8. The method as claimed in claim 7, wherein the growth temperature of the first reflective layer is 620 ℃ and 720 ℃, and the growth rate of the first reflective layer is 0.5-3.5 μm/hr.
9. The method as claimed in claim 7, wherein the growth temperature of the second reflective layer is 700 ℃ and 750 ℃ and the growth rate of the second reflective layer is 1.5-4.5 μm/hr.
10. A laser apparatus, comprising:
a substrate;
a light emitting element disposed on the substrate, the light emitting element including at least one vertical cavity surface emitting laser, the vertical cavity surface emitting laser including:
a substrate;
a first reflective layer disposed on the substrate;
an active layer disposed on the first reflective layer, for emitting a laser beam;
a second reflective layer disposed on the active layer;
wherein the second reflecting layer comprises a plurality of optical scattering layers, the laser beam passes through the optical scattering layers to form a far-field light spot, the optical scattering layers scatter the laser beam at the edge into the central area of the far-field light spot, and the optical scattering layers are stacked or arranged at intervals;
wherein the optical scattering layer comprises optical scattering particles thereon, the optical scattering particles comprising undulating interfaces;
wherein the roughness of the optical scattering layer is greater than the roughness of the first reflective layer.
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| US10072815B2 (en) * | 2016-06-23 | 2018-09-11 | Apple Inc. | Top-emission VCSEL-array with integrated diffuser |
| KR102183019B1 (en) * | 2018-09-10 | 2020-11-26 | 광전자 주식회사 | Highly efficient oxidation-type VCSEL comprising an anti-reflection layer and method for manufacturing thereof |
| CN110071424B (en) * | 2019-03-29 | 2020-07-07 | 华灿光电(苏州）有限公司 | Vertical cavity surface emitting laser and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109411582A (en) * | 2018-10-31 | 2019-03-01 | 扬州乾照光电有限公司 | A kind of LED chip of roughing in surface and preparation method thereof |
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