CN113257968B - Light-emitting diode with nitrogen polar surface n-type electron barrier layer - Google Patents
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 50
- 230000004888 barrier function Effects 0.000 title claims abstract description 21
- 150000004767 nitrides Chemical class 0.000 claims abstract description 112
- 230000000903 blocking effect Effects 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 38
- 229910002704 AlGaN Inorganic materials 0.000 claims description 34
- 229910002601 GaN Inorganic materials 0.000 claims description 23
- 239000002131 composite material Substances 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- 230000005855 radiation Effects 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 7
- 230000010287 polarization Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 10
- 239000000969 carrier Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 230000005699 Stark effect Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a light-emitting diode with a nitrogen polar surface n-type electronic barrier layer, which sequentially comprises a substrate, a nitrogen polar nitride layer, a polarity reversal nitride layer, an n-type nitride ohmic contact layer, an n-type nitrogen polar surface electronic barrier layer, a non-doped superlattice structure layer, a multi-quantum well active layer and a p-type nitride ohmic contact layer from bottom to top. And respectively arranging an n-type electrode and a p-type electrode on the n-type nitride ohmic contact layer and the p-type nitride ohmic contact layer. The n-type electron blocking layer with the nitrogen polar surface can limit the number of electrons entering the active region from space, and the traditional p-type doped electron blocking layer is removed, so that the injection rate of holes can be increased, the number of the holes and the electrons injected into the active region can be kept at a balanced level, the probability of radiation recombination light emission of electrons and holes in the active region can be improved, and the performance of the light-emitting diode can be improved.
Description
Technical Field
The invention provides a Light Emitting Diode (LED) with a nitrogen polar surface n-type electron blocking layer, belonging to the technical field of semiconductor photoelectron materials and device manufacturing.
Background
Because the LED has the advantages of high efficiency, energy conservation, high reliability, long service life and the like, and has great advantages in energy conservation, emission reduction and environmental protection compared with the traditional illumination light source, the LED gradually replaces the traditional illumination modes such as a fluorescent lamp, an incandescent lamp and the like at present. However, as shown in fig. 2, the internal quantum efficiency of the LED is rapidly reduced under the condition of high current injection, electrons easily overcome the limitation of the quantum well and reach the p region to recombine with holes in a non-radiative manner, which is a main factor causing the reduction of the light emitting efficiency of the LED under the condition of high current density, and the application and development of the LED are severely restricted. Therefore, reducing the leakage rate of electrons is one of the important ways to improve the light emitting efficiency of LEDs.
Since electrons have a smaller effective mass and higher mobility than holes and the concentration of electrons in the LED is much greater than that of holes, excess electrons can easily pass through the multiple quantum well active region into the p-type region, causing severe current leakage and thus lowering the light emitting efficiency of the LED chip. In order to effectively block the overflow of electrons and improve the injection efficiency of holes, researchers have tried to improve the electron blocking layer structure by various methods, including an AlGaN electron blocking layer with a gradually changed Al composition, a p-AlGaN/GaN superlattice electron blocking layer, a composite polar surface electron blocking layer, and the like. However, these electron blocking layers still do not satisfactorily solve the following technical problems: 1) the traditional p-type electron blocking layer can block electron leakage and simultaneously reduce hole injection efficiency, so that the radiation recombination efficiency and the luminous efficiency of carriers in the LED are reduced; 2) lattice mismatch between a multi-quantum well active region and an electron blocking layer is generally large, so that a strong polarization electric field exists in the active region, energy band bending of a heterojunction interface is caused, wave functions of electrons and holes are separated in space, and radiation recombination efficiency of current carriers is reduced, namely the so-called quantum confinement Stark effect; 3) the p-type electron blocking layer using a nitrogen polar face for improving the hole injection efficiency often requires heavy doping of Mg element to induce polarity inversion, which causes doping accumulation of Mg in the thin film, resulting in deterioration of crystal quality. Therefore, further improvement in designing and preparing a suitable electron blocking layer structure is of great significance in improving the luminous efficiency of the gallium nitride-based LED.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the prior art, the n-type electron blocking layer structure with the nitrogen polar surface is provided, so that the internal quantum efficiency of the LED is improved, and the luminous efficiency of an LED device is improved.
The technical scheme is as follows: a light-emitting diode with a nitrogen polar surface n-type electron blocking layer comprises a substrate 101, a nitrogen polar surface nitride layer 102, a polarity reversal nitride layer 103, an n-type nitride ohmic contact layer 104, an n-type nitrogen polar surface electron blocking layer 106, a non-doped superlattice structure nitride layer 107, a multi-quantum well active layer 108, a p-type nitride ohmic contact layer 109, an n-type electrode 105 arranged on the n-type nitride ohmic contact layer 104 and a p-type electrode 110 arranged on the p-type nitride ohmic contact layer 109 which are sequentially arranged from bottom to top.
Further, the forbidden bandwidth of the n-type nitrogen polar plane electron blocking layer 106 is greater than the forbidden bandwidths of the barrier layer in the non-doped superlattice structure nitride layer 107 and the barrier layer in the multiple quantum well active layer 108, and the forbidden bandwidth of the barrier layer in the non-doped superlattice structure nitride layer 107 is greater than the forbidden bandwidth of the barrier layer in the multiple quantum well active layer 108.
Further, the n-type electron blocking layer 106 on the nitrogen polar surface is made of AlGaN, InGaN ternary nitride material or AlInGaN quaternary nitride material with uniform or gradually changed components, the thickness is 1-20nm, Si is used for n-type doping, and the concentration of electrons formed by doping is 1 x 1018～5×1019cm-3。
Further, the number of repetition cycles of the undoped superlattice nitride layer 107 is 2-20, the forbidden bandwidth decreases linearly along the growth direction, the length of each cycle is 2-10nm, and any one of an AlGaN/AlInGaN superlattice structure and a composite superlattice structure consisting of ternary or quaternary nitride and AlGaN/AIlnGaN superlattice is selected.
Further, the nitrogen polar face nitride layer 102 is a gallium nitride or aluminum nitride material having a uniform composition.
Furthermore, the thickness of the polarity-reversal nitride layer 103 is 0.1-1 μm, and a patterned GaN/AlN binary nitride material with uniform components is selected.
Further, the thickness of the p-type nitride ohmic contact layer 109 is 20-500 nm, and a p-type GaN binary nitride material with uniform components, or a p-type AlGaN and InGaN ternary nitride material, or a p-type AlInGaN quaternary nitride material, or an AlGaN, InGaN and AlInGaN nitride material with gradually changed components is selected; the p-type nitride ohmic contact layer 109 is p-doped with Mg element to form holes with a concentration of 1X 1016～1×1019cm-3。
Furthermore, the number of repetition cycles of the multiple quantum well active layer 108 is 3-10, the length of each cycle is 3-15 nm, and a GaN binary nitride material with uniform components, or an AlGaN and InGaN ternary nitride material, or an AlInGaN quaternary nitride material, or an AlGaN, InGaN and AlInGaN nitride material with gradually changed components is selected to form the multiple quantum well active layer.
Further, the thickness of the n-type nitride ohmic contact layer 104 is 0.5-5 μm, and an AlGaN ternary nitride layer with uniform components or an InAlGaN quaternary nitride layer, or any one of AlGaN and InAlGaN nitride layers with gradually changed components, an AlGaN/InAlGaN superlattice structure and a composite structure consisting of ternary or quaternary nitride and AlGaN/InAlGaN superlattice is selected; the barrier layer in the n-type nitride ohmic contact layer 104 was n-doped with Si element to have an electron concentration of 1 × 1017～1×1020cm-3。
Has the advantages that: compared with the traditional LED with the p-type electron blocking layer, the LED with the n-type electron blocking layer with the nitrogen polar surface provided by the invention has the following advantages:
1) by employing an n-type electron blocking layer structure having a nitrogen polar surface, a sufficiently high potential barrier can be provided, limiting the amount of electrons entering the active region, and the nitrogen polar surface can provide an electric field opposite to the spontaneous polarization direction of the metal polar surface, helping to cancel part of the polarized electric field, thereby spatially limiting the concentration of electrons in the active region.
2) The direction of the spontaneous polarization electric field of the nitrogen polar surface is opposite to the polarization direction of the active region, which is beneficial to offsetting partial polarization electric field, can reduce the quantum confinement Stark effect in the multiple quantum well active region, increase the radiation recombination probability of electron holes, and thus improve the internal quantum efficiency of the LED.
3) The undoped nitride superlattice structure layer can effectively reduce lattice mismatch between the n-type electron blocking layer and the multi-quantum well active region, so that a polarization electric field caused by a piezoelectric polarization effect is reduced, an effective potential barrier of the n-type electron blocking layer on the nitrogen polar surface is improved, two-dimensional electron gas density at a heterojunction interface is reduced, and space distribution uniformity and coincidence rate of carriers are improved.
4) Because the p-type electron blocking layer in the traditional LED structure is removed, the injection efficiency of holes to the multi-quantum well active region can be obviously increased, so that the concentration of the holes and electrons in the active region can be maintained at a balanced level, and the radiation recombination efficiency of the electrons and the holes can be improved.
Drawings
Fig. 1 is a schematic cross-sectional structure view of an LED with an n-type electron blocking layer having a nitrogen polar surface according to the present invention, wherein: the substrate 101, the nitrogen polar surface nitride layer 102, the polarity reversal nitride layer 103, the n-type nitride ohmic contact layer 104, the n-type electrode 105, the n-type nitrogen polar surface electron barrier layer 106, the undoped superlattice structure nitride layer 107, the multi-quantum well active layer 108, the p-type nitride ohmic contact layer 109 and the p-type electrode 110;
fig. 2 is a schematic view of a cross-sectional structure of an LED prepared by the prior art, wherein: a substrate 201, a nitride nucleation layer 202, a nitride buffer layer 203, an n-type nitride ohmic contact layer 204, a multiple quantum well active region 205, a p-type nitride electron blocking layer 206, a p-type nitride hole injection layer 207, an Indium Tin Oxide (ITO) conductive layer 208, an n-type electrode 209, and a p-type electrode 210.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in fig. 1, a light emitting diode having a n-type electron blocking layer with a nitrogen polar surface includes a substrate 101, a nitride layer 102 with a nitrogen polar surface, a polarity-reversed nitride layer 103, an n-type nitride ohmic contact layer 104, an electron blocking layer 106 with an n-type nitrogen polar surface, a nitride layer 107 with a non-doped superlattice structure, a multiple quantum well active layer 108, and an ohmic contact layer 109, which are sequentially arranged from bottom to top, and an n-type electrode 105 arranged on the n-type nitride ohmic contact layer 104 and a p-type electrode 110 arranged on the ohmic contact layer 109.
The nitrogen polar surface nitride layer 102 is a gallium nitride or aluminum nitride material with uniform composition. The thickness of the polarity inversion nitride layer 103 is 0.1-1 μm, and a GaN/AlN binary nitride material with uniform components and subjected to patterning treatment is selected.
n-type nitrideThe thickness of the ohmic contact layer 104 is 0.5-5 μm, and any one of an AlGaN ternary nitride layer with uniform components, an InAlGaN quaternary nitride layer, or an AlGaN, InAlGaN nitride layer with gradually changed components, an AlGaN/InAlGaN superlattice structure and a composite structure consisting of ternary or quaternary nitride and AlGaN/InAlGaN superlattice is selected; the barrier layer in the n-type nitride ohmic contact layer 104 was n-doped with Si element to have an electron concentration of 1 × 1017～1×1020cm-3。
The forbidden band width of the n-type nitrogen polar surface electron blocking layer 106 is larger than the forbidden band widths of the barrier layers in the non-doped superlattice structure nitride layer 107 and the barrier layers in the multiple quantum well active layer 108, and the forbidden band width of the barrier layers in the non-doped superlattice structure nitride layer 107 is larger than the forbidden band width of the barrier layers in the multiple quantum well active layer 108. The N-type electron blocking layer 106 of the nitrogen polar surface is made of AlGaN, InGaN ternary nitride material or AlInGaN quaternary nitride material with uniform or gradual change components, the thickness is 1-20nm, Si is used for n-type doping, and the concentration of electrons formed by doping is 1 x 1018～5×1019cm-3。
The number of repetition cycles of the undoped superlattice nitride layer 107 is 2-20, the forbidden bandwidth decreases linearly along the growth direction, the length of each period is 2-10nm, and any one of an AlGaN/AlInGaN superlattice structure and a composite superlattice structure consisting of ternary or quaternary nitride and AlGaN/AIlnGaN superlattice is selected.
The number of repetition cycles of the multiple quantum well active layer 108 is 3-10, the length of each cycle is 3-15 nm, and a GaN binary nitride material with uniform components, or an AlGaN and InGaN ternary nitride material, or an AlInGaN quaternary nitride material, or an AlGaN, InGaN and AlInGaN nitride material with gradually changed components is selected to form the multiple quantum well active layer.
The thickness of the p-type nitride ohmic contact layer 109 is 20-500 nm, and a p-type GaN binary nitride material with uniform components, or a p-type AlGaN and InGaN ternary nitride material, or a p-type AlInGaN quaternary nitride material, or an AlGaN, InGaN and AlInGaN nitride material with gradually changed components is selected; the p-type nitride ohmic contact layer 109 is usedMg element is doped p-type, and the concentration of holes formed by doping is 1 multiplied by 1016～1×1019cm-3。
In this embodiment, the light emitting diode comprises a c-plane sapphire substrate 101, a nitrogen polar plane GaN layer 102, a polarity-reversed AlN layer 103, and n-type Al0.2Ga0.8N-ohmic contact layer 104, N-type nitrogen polar surface Al0.3Ga0.7N-electron blocking layer 106, undoped AlxGa1-xN/AlyGa1-yNitride layer 107 of N superlattice structure, In0.2Ga0.8N/GaN multi-quantum well active layer 108, p-type GaN ohmic contact layer 109, and N-type Al0.2Ga0.8An N-type electrode 105 disposed on the N-ohmic contact layer 104, and a p-type electrode 110 disposed on the p-type GaN ohmic contact layer 109.
The thickness of the nitrogen polar surface GaN layer 102 was 50nm, the thickness of the polarity-reversed AlN layer 103 was 500nm, and n-type Al0.2Ga0.8The thickness of the N-type ohmic contact layer 104 was 2 μm, and the N-type nitrogen polar surface Al0.3Ga0.7The thickness of the N electron blocking layer 106 is 20nm, and the N electron blocking layer is not doped with AlxGa1-xN/AlyGa1-yAl in N superlattice structure 107xGa1-xN and AlyGa1-yThe thickness of the N layer is respectively 4nm and 6nm, the length of each period is 10nm, the period is repeated for 20 periods, the total thickness is 200nm, x is linearly decreased from 0.3 to 0.05 along the growth direction, y is linearly decreased from 0.25 to 0 along the growth direction, In0.2Ga0.8In N/GaN multiple quantum well active layer 1080.2Ga0.8The N-well width is 3nm, the GaN barrier thickness is 7nm, the cycle length is 10nm, 20 cycles are repeated, the total thickness is 200nm, and the thickness of the p-type GaN ohmic contact layer 109 is 100 nm.
By using n-type Al with nitrogen polar face0.3Ga0.7The N-electron blocking layer structure spatially and temporally limits the number of electrons entering the active region. Specifically, n-type nitrogen polar face Al0.3Ga0.7The N electron blocking layer can provide a high enough potential barrier and an electric field opposite to the spontaneous polarization direction of the metal polar surface, so that the concentration of electrons in the active region can be controlled; and a self-electrode of the nitrogen polar faceThe direction of the electric field is opposite to the polarization direction in the active region, which is beneficial to offsetting partial polarization electric field, reducing the quantum confinement Stark effect in the multiple quantum well active region, increasing the radiation recombination probability of electron holes and further improving the internal quantum efficiency of the LED. Meanwhile, the p-type electron blocking layer in the traditional LED structure is removed, so that the injection efficiency of holes to the multi-quantum well active region can be remarkably increased, the concentration of the holes and electrons in the active region can be maintained at a balanced level, and the radiation recombination efficiency of the electrons and the holes can be improved. In addition, the adoption of the undoped nitride superlattice structure layer can effectively reduce n-type Al0.3Ga0.7N electron blocking layer and In0.2Ga0.8Lattice mismatch between N/GaN multiple quantum well active regions can reduce polarization electric field caused by piezoelectric polarization effect and improve N-type Al of nitrogen polar surface0.3Ga0.7The effective potential barrier of the N electron blocking layer reduces the two-dimensional electron gas density at the heterojunction interface and improves the space distribution uniformity and coincidence rate of the carriers.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. A light emitting diode with a nitrogen polar surface n-type electron blocking layer is characterized in that: the N-type nitride-based multi-quantum-well substrate comprises a substrate (101), a nitrogen polar surface nitride layer (102), a polarity reversal nitride layer (103), an n-type nitride ohmic contact layer (104), an n-type nitrogen polar surface electron barrier layer (106), a non-doped superlattice structure nitride layer (107), a multi-quantum-well active layer (108), a p-type nitride ohmic contact layer (109) which are sequentially arranged from bottom to top, an n-type electrode (105) arranged on the n-type nitride ohmic contact layer (104) and a p-type electrode (110) arranged on the p-type nitride ohmic contact layer (109);
the forbidden band width of the n-type nitrogen polar surface electron blocking layer (106) is larger than the forbidden band width of the barrier layer in the non-doped superlattice structure nitride layer (107) and the forbidden band width of the barrier layer in the multi-quantum well active layer (108), and the forbidden band width of the barrier layer in the non-doped superlattice structure nitride layer (107) is larger than the forbidden band width of the barrier layer in the multi-quantum well active layer (108).
2. The light emitting diode with a nitrogen polar face n-type electron blocking layer as claimed in claim 1, wherein: the n-type electron blocking layer (106) with the nitrogen polar surface is made of AlGaN, InGaN ternary nitride material or AlInGaN quaternary nitride material with uniform or gradually changed components, the thickness is 1-20nm, Si is used for n-type doping, and the concentration of electrons formed by doping is 1 multiplied by 1018～5×1019cm-3。
3. The light emitting diode with a nitrogen polar face n-type electron blocking layer as claimed in claim 1, wherein: the number of repetition cycles of the undoped superlattice nitride layer (107) is 2-20, the forbidden bandwidth is linearly decreased along the growth direction, the length of each cycle is 2-10nm, and any one of an AlGaN/AlInGaN superlattice structure and a composite superlattice structure consisting of ternary or quaternary nitride and AlGaN/AIlnGaN superlattice is selected.
4. The light-emitting diode having a nitrogen polar plane n-type electron blocking layer according to any one of claims 1 to 3, wherein: the nitrogen polar face nitride layer (102) is a gallium nitride or aluminum nitride material with uniform composition.
5. The light-emitting diode having a nitrogen polar plane n-type electron blocking layer according to any one of claims 1 to 3, wherein: the thickness of the polarity reversal nitride layer (103) is 0.1-1 μm, and a GaN and AlN binary nitride material with uniform components and subjected to patterning treatment is selected.
6. The light-emitting diode having a nitrogen polar plane n-type electron blocking layer according to any one of claims 1 to 3, wherein: the thickness of the p-type nitride ohmic contact layer (109) is 20-500 nm, and a p-type GaN binary nitride material with uniform components or p-type AlGaN and InGaN ternary nitride material is selectedThe material, or p-type AlInGaN quaternary nitride material, or AlGaN, InGaN, AlInGaN nitride material with gradually changed components; the p-type nitride ohmic contact layer (109) is p-doped with Mg element to form holes with a concentration of 1X 1016～1×1019cm-3。
7. A light emitting diode having a nitrogen polar face n-type electron blocking layer according to any one of claims 1 to 3, wherein: the number of repetition cycles of the multiple quantum well active layer (108) is 3-10, the length of each cycle is 3-15 nm, and a GaN binary nitride material with uniform components, or an AlGaN and InGaN ternary nitride material, or an AlInGaN quaternary nitride material, or an AlGaN, InGaN and AlInGaN nitride material with gradually changed components is selected to form the multiple quantum well active layer.
8. The light-emitting diode having a nitrogen polar plane n-type electron blocking layer according to any one of claims 1 to 3, wherein: the thickness of the n-type nitride ohmic contact layer (104) is 0.5-5 mu m, and any one of an AlGaN ternary nitride layer with uniform components, an InAlGaN quaternary nitride layer, an AlGaN/InAlGaN superlattice structure with gradually changed components, an InAlGaN/InAlGaN quaternary nitride layer and a composite structure consisting of ternary or quaternary nitride and AlGaN/InAlGaN superlattice is selected; the barrier layer in the n-type nitride ohmic contact layer (104) is n-doped with Si element to form an electron concentration of 1 x 1017～1×1020cm-3。
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|---|---|---|---|---|
| CN105870283A (en) * | 2016-05-17 | 2016-08-17 | 东南大学 | Light-emitting diode with composite polar face electron blocking layer |
| CN109346575A (en) * | 2018-09-03 | 2019-02-15 | 淮安澳洋顺昌光电技术有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN110970533A (en) * | 2019-12-30 | 2020-04-07 | 广东德力光电有限公司 | Purple light epitaxial structure of LED flip chip and preparation method thereof |
| CN111599903A (en) * | 2020-06-23 | 2020-08-28 | 东南大学 | Ultraviolet LED with polarization-doped composite polar surface electron barrier layer |
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2021
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| CN105870283A (en) * | 2016-05-17 | 2016-08-17 | 东南大学 | Light-emitting diode with composite polar face electron blocking layer |
| CN109346575A (en) * | 2018-09-03 | 2019-02-15 | 淮安澳洋顺昌光电技术有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN110970533A (en) * | 2019-12-30 | 2020-04-07 | 广东德力光电有限公司 | Purple light epitaxial structure of LED flip chip and preparation method thereof |
| CN111599903A (en) * | 2020-06-23 | 2020-08-28 | 东南大学 | Ultraviolet LED with polarization-doped composite polar surface electron barrier layer |
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| Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Light-Emitting Diodes;Yun Li,et.al;《JOURNAL OF DISPLAY TECHNOLOGY》;20130212;第9卷(第4期);第244-248页 * |
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