[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN113214830A - Double-acid assisted synthesis of CsPbX3Method for quantum dots - Google Patents

Double-acid assisted synthesis of CsPbX3Method for quantum dots Download PDF

Info

Publication number
CN113214830A
CN113214830A CN202110500565.6A CN202110500565A CN113214830A CN 113214830 A CN113214830 A CN 113214830A CN 202110500565 A CN202110500565 A CN 202110500565A CN 113214830 A CN113214830 A CN 113214830A
Authority
CN
China
Prior art keywords
acid
mixed solution
cspbx
dodecylbenzene sulfonic
precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110500565.6A
Other languages
Chinese (zh)
Inventor
宋继中
张百松
方涛
袁诗晨
杨林翔
李贤胜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing University of Science and Technology
Original Assignee
Nanjing University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing University of Science and Technology filed Critical Nanjing University of Science and Technology
Priority to CN202110500565.6A priority Critical patent/CN113214830A/en
Publication of CN113214830A publication Critical patent/CN113214830A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/664—Halogenides
    • C09K11/665—Halogenides with alkali or alkaline earth metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G21/00—Compounds of lead
    • C01G21/006—Compounds containing, besides lead, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Luminescent Compositions (AREA)

Abstract

The invention discloses a double-acid-assisted synthesis CsPbX3A method of quantum dots. The method comprises the steps of dissolving cesium salt by two organic acids with different steric hindrance to form a cesium precursor, adding lead bromide and tetra-n-octylammonium bromide into toluene to form a lead precursor, finally injecting the cesium precursor into the lead precursor, and stirring for reaction to obtain CsPbX3And (4) quantum dots. The invention adopts the dual acid to regulate and synthesize the stable high-quality CsPbX3The quantum dots have enhanced luminescent performance and crystallization quality, and can be used for preparing CsPbX with high luminescent efficiency3A quantum dot light emitting device.

Description

Double-acid assisted synthesis of CsPbX3Method for quantum dots
Technical Field
The invention belongs to the technical field of quantum dot synthesis, and relates to a double-acid-assisted synthesis CsPbX3A method of quantum dots.
Background
CsPbX3The quantum dot material has the advantages of extremely high quantum yield, narrow light-emitting peak, high carrier mobility, high defect tolerance and the like, and has great development potential in the photoelectric fields of LED devices, solar cells, detectors and the like. However, CsPbX prepared by the existing method3The low luminous efficiency and colloid instability of the quantum dots limit further application thereof. CsPbI prepared from precursor of Xia et al using palmitic acid as solvent3Quantum dots have High PLQY (up to 92%), and palmitic acid can inhibit agglomeration of quantum dots, thereby reducing their regeneration-induced instability (Xia, H.; Wu, S.; Li, L.; Zhang, S., High binding affinity and controlled formation of CsPbX)3(X-Cl/Br, Br, I) peroxide nanocrystals with high quality standards and enhanced stability RSC adv.2018,8(63), 35973-. Yang et al use benzenesulfonic acid as a solvent precursor to prepare perovskite quantum dots, which can firmly bind non-coordinated lead ions and effectively eliminate exciton trapping probability caused by bromine vacancies (Yang, D.; Li, X.; Zhou, W.; et al, CsPbBr)3Quantum Dots 2.0 Benzenesulfonic Acid Equivalent liquid organic and Awakens Complete purification. adv. Mater.2019,31(30), e 1900767.). Tan et al prepared CsPbX from precursors containing octylphosphonic acid3Quantum dots, the quantum dots obtained, due to the strong interaction between Octylphosphonic Acid and lead atoms, obtained high quality dispersion in solvents after multiple purifications, the QLEDs prepared correspond to an external quantum efficiency of 6.5% (Tan, Y.; Zou, Y.; Wu, L.; et al., high luminescence and Stable Perovskite Nanocrystals with an octyl phosphonic Acid as a Light and for Efficient Light-Emitting diodes ACS. Appl. matrix. interfaces 2018,10(4), 3784-3792.). However, the CsPbX synthesized by using monoacid as a surface chelating ligand3The method of quantum dots still has the problem of loss of a large amount of ligands, so that poor colloidal stability is easily caused, and the light efficiency of the quantum dots and the dispersibility of the quantum dots in a solvent are greatly reduced. Therefore, it is urgentDevelopment of suitable acid ligands is required to efficiently passivate CsPbX3The surface defects of the quantum dots and the combination of the ligands and the quantum dots are enhanced, so that the colloidal stability and the luminous efficiency of the quantum dots are improved.
Disclosure of Invention
The invention aims to provide a double-acid-assisted synthesis CsPbX for effectively improving the stability and the luminous efficiency of quantum dot glue3A method of quantum dots.
The technical scheme for realizing the purpose of the invention is as follows:
double-acid assisted synthesis of CsPbX3A method of quantum dots comprising the steps of:
(1) dissolving cesium carbonate in a mixed solution of organic acids to form a cesium precursor, wherein the organic acids are two selected from n-octanoic acid, oleic acid, dodecylbenzene sulfonic acid and n-octylphosphoric acid;
(2) adding lead bromide and tetra-n-octyl ammonium bromide into toluene, and stirring and dissolving in air at room temperature to form a lead precursor;
(3) injecting a cesium precursor into a lead precursor, and stirring for reaction to obtain CsPbX3Adding the quantum dot stock solution into a purification solvent for centrifugation, and re-dispersing the centrifuged precipitate in an organic solvent to obtain purified CsPbX3And (4) quantum dots.
Preferably, in the step (1), the concentration of cesium carbonate in the cesium precursor is 0.2-1 mol/L.
Preferably, in the step (1), the mixed solution of the organic acid is a mixed solution of n-octanoic acid and oleic acid, a mixed solution of n-octanoic acid and dodecylbenzene sulfonic acid, a mixed solution of n-octanoic acid and n-octylphosphoric acid, a mixed solution of oleic acid and dodecylbenzene sulfonic acid, a mixed solution of oleic acid and n-octylphosphoric acid, or a mixed solution of dodecylbenzene sulfonic acid and n-octylphosphoric acid.
Preferably, in the mixed solution of the n-caprylic acid and the oleic acid, the volume ratio of the n-caprylic acid to the oleic acid is 4: 6-8: 2.
Preferably, in the mixed solution of the n-octanoic acid and the dodecylbenzene sulfonic acid, the volume ratio of the n-octanoic acid to the dodecylbenzene sulfonic acid is 3: 7-7: 3.
Preferably, in the mixed solution of n-octanoic acid and n-octylphosphoric acid, the volume ratio of n-octanoic acid to n-octylphosphoric acid is 3: 7-8: 2.
Preferably, in the mixed solution of oleic acid and dodecylbenzene sulfonic acid, the volume ratio of oleic acid to dodecylbenzene sulfonic acid is 2: 8-3: 7.
Preferably, in the mixed solution of oleic acid and n-octyl phosphoric acid, the volume ratio of oleic acid to n-octyl phosphoric acid is 3: 7-5: 5.
Preferably, in the mixed solution of dodecylbenzene sulfonic acid and n-octylphosphoric acid, the volume ratio of dodecylbenzene sulfonic acid to n-octylphosphoric acid is 3: 7-6: 4.
Preferably, in the step (2), the concentration of lead bromide in the lead precursor is 0.02-0.1 mol/L, and the concentration of tetra-n-octylammonium bromide is 0.04-0.2 mol/L.
Preferably, in the step (3), the stirring reaction time is 1-5 min.
Preferably, in the step (3), the purification solvent is a purification solvent conventionally used in the art, such as ethyl acetate, methyl acetate, butyl acetate, isopropanol, n-butanol, t-butanol, acetone, and the like; the CsPbX3The volume ratio of the quantum dot stock solution to the purification solvent is 1: 1-1: 3.
In the step (3), the organic solvent is conventionally used in the art for dispersing CsPbX3Organic solvents for quantum dots, such as n-hexane, n-octane, toluene, and the like.
Compared with the prior art, the invention has the following advantages:
the present invention utilizes two organic acids with different steric hindrance to dissolve cesium salt, and deprotonation functional group of organic acid can be reacted with CsPbX3The uncoordinated lead ions on the surface of the quantum dot are combined and simultaneously bonded with CsPbX through hydrogen bonds3And (3) bromine ion interaction on the surface of the quantum dot. Different steric hindrance of the double organic acids can further improve CsPbX3The surface state of the quantum dot leads the ligand to be orderly combined on the surface, and the exciton recombination is enhanced. The invention adopts the dual acid to regulate and synthesize the stable high-quality CsPbX3Quantum dots, synthesisCsPbX of3The quantum dots have nearly consistent quantum yield and high photoluminescence intensity, the luminescent performance and the crystallization quality of the quantum dots are enhanced, and the quantum dots can be used for preparing CsPbX with high luminescent efficiency3A quantum dot light emitting device.
Drawings
Fig. 1 is an XRD pattern of the quantum dot prepared in example 1.
Fig. 2 is PL plots corresponding to quantum dots obtained in comparative example, example 1, example 2, and example 3.
Fig. 3 is PL plots corresponding to the quantum dots obtained in comparative example, example 2, example 4, and example 5.
Fig. 4 is PL plots corresponding to the quantum dots obtained in comparative example, example 6, example 7, and example 8.
Fig. 5 is a graph of EQE for QLEDs prepared in comparative example, example 1, example 2, and example 3.
Fig. 6 is a graph of EQE for QLEDs prepared in comparative example, example 2, example 4, and example 5.
Fig. 7 is a graph of EQE for QLEDs prepared in comparative example, example 6, example 7, and example 8.
Detailed Description
The invention is described in more detail below with reference to specific embodiments and the accompanying drawings.
Example 1
1) Dissolving 2mmol of cesium carbonate in 1.5mL of n-octanoic acid and 3.5mL of dodecylbenzene sulfonic acid, and stirring the solution in air at room temperature until the cesium carbonate is completely dissolved to prepare a cesium precursor;
2) adding 2mmol of lead bromide and 4.4mmol of tetra-n-octyl ammonium bromide into 30mL of toluene, and stirring the mixture in air at room temperature until the mixture is completely dissolved to obtain a lead precursor;
3) adding a cesium precursor into a lead precursor solution in a reaction flask, and reacting for 3min to obtain CsPbX3Adding 60mL of ethyl acetate into the quantum dot stock solution, centrifuging to remove supernatant, and dispersing the precipitate in 10mL of n-octane to obtain CsPbBr3Quantum dots;
4) sequentially spin-coating PEDOT, PSS, PTAA and CsPbBr on a glass substrate with an ITO electrode3Quantum dots ofAnd sequentially evaporating 40nm of TPBi, 1nm of LiF and 100nm of Al electrodes in the thermal evaporation cavity to obtain the QLED device.
Comparative example 1
The same procedure as in example 1 was used except that 1.5mL of n-octanoic acid and 3.5mL of dodecylbenzenesulfonic acid in step 1) of example 1 were changed to 5mL of n-octanoic acid, and the other conditions were kept the same.
Example 2
The same procedure as in example 1 was used except that 1.5mL of n-octanoic acid and 3.5mL of dodecylbenzenesulfonic acid in step 1) of example 1 were changed to 2.5mL of n-octanoic acid and 2.5mL of dodecylbenzenesulfonic acid, and the other conditions were kept the same.
Example 3
The same procedure as in example 1 was used except that 1.5mL of n-octanoic acid and 3.5mL of dodecylbenzenesulfonic acid in step 1) of example 1 were changed to 3.5mL of n-octanoic acid and 1.5mL of dodecylbenzenesulfonic acid, and the other conditions were kept the same.
Example 4
The same procedure as in example 1 was used except that 1.5mL of n-octanoic acid and 3.5mL of dodecylbenzenesulfonic acid in step 1) of example 1 were changed to 2.5mL of n-octanoic acid and 2.5mL of oleic acid, and the other conditions were kept the same.
Example 5
The same procedure as in example 1 was used except that 1.5mL of n-octanoic acid and 3.5mL of dodecylbenzenesulfonic acid in step 1) of example 1 were changed to 2.5mL of n-octanoic acid and 2.5mL of n-octylphosphoric acid, and the other conditions were kept the same.
Example 6
The same procedure as in example 1 was used except that 1.5mL of n-octanoic acid and 3.5mL of dodecylbenzenesulfonic acid in step 1) of example 1 were changed to 1mL of oleic acid and 4mL of dodecylbenzenesulfonic acid, and the other conditions were kept the same.
Example 7
The same procedure as in example 1 was used except that 1.5mL of n-octanoic acid and 3.5mL of dodecylbenzenesulfonic acid in step 1) of example 1 were changed to 2mL of oleic acid and 3mL of n-octylphosphoric acid, and the other conditions were kept the same.
Example 8
The same procedure as in example 1 was used except that 1.5mL of n-octanoic acid and 3.5mL of dodecylbenzenesulfonic acid in step 1) of example 1 were changed to 2.5mL of n-octylphosphoric acid and 2.5mL of dodecylbenzenesulfonic acid, and the other conditions were kept the same.
As can be seen from FIG. 1, the synthesis of CsPbX assisted by diacid3The nanocrystal is good in crystallinity. FIGS. 2, 3 and 4 show the synthesized CsPbX3The nanocrystalline has a narrow high-purity green light luminous peak (the half-peak width is less than 20nm, and the luminous peak is about 516 nm). As can be seen from FIGS. 5, 6 and 7, the room temperature quantum dots synthesized by the aid of the diacid can achieve a luminous efficiency of over 10 percent and a maximum of 17 percent even without further improvement, which is obviously higher than that of CsPbX synthesized by the monoacid3And (4) quantum dots.

Claims (10)

1. Double-acid assisted synthesis of CsPbX3A method of quantum dots comprising the steps of:
(1) dissolving cesium carbonate in a mixed solution of organic acids to form a cesium precursor, wherein the organic acids are two selected from n-octanoic acid, oleic acid, dodecylbenzene sulfonic acid and n-octylphosphoric acid;
(2) adding lead bromide and tetra-n-octyl ammonium bromide into toluene, and stirring and dissolving in air at room temperature to form a lead precursor;
(3) injecting a cesium precursor into a lead precursor, and stirring for reaction to obtain CsPbX3Adding the quantum dot stock solution into a purification solvent for centrifugation, and re-dispersing the centrifuged precipitate in an organic solvent to obtain purified CsPbX3And (4) quantum dots.
2. The method according to claim 1, wherein in the step (1), the concentration of cesium carbonate in the cesium precursor is 0.2 to 1 mol/L.
3. The method according to claim 1, wherein in the step (1), the mixed solution of the organic acid is a mixed solution of n-octanoic acid and oleic acid, a mixed solution of n-octanoic acid and dodecylbenzene sulfonic acid, a mixed solution of n-octanoic acid and n-octylbenzene phosphoric acid, a mixed solution of oleic acid and dodecylbenzene sulfonic acid, a mixed solution of oleic acid and n-octylbenzene phosphoric acid, or a mixed solution of dodecylbenzene sulfonic acid and n-octylbenzene phosphoric acid.
4. The method according to claim 1, wherein in the mixed solution of the n-octanoic acid and the oleic acid, the volume ratio of the n-octanoic acid to the oleic acid is 4: 6-8: 2; in the mixed solution of the n-octanoic acid and the dodecylbenzene sulfonic acid, the volume ratio of the n-octanoic acid to the dodecylbenzene sulfonic acid is 3: 7-7: 3.
5. The method according to claim 1, wherein in the mixed solution of n-octanoic acid and n-octylphosphoric acid, the volume ratio of n-octanoic acid to n-octylphosphoric acid is 3:7 to 8: 2; in the mixed solution of the oleic acid and the dodecylbenzene sulfonic acid, the volume ratio of the oleic acid to the dodecylbenzene sulfonic acid is 2: 8-3: 7.
6. The method according to claim 1, wherein in the mixed solution of oleic acid and n-octyl phosphoric acid, the volume ratio of oleic acid to n-octyl phosphoric acid is 3: 7-5: 5; in the mixed solution of the dodecylbenzene sulfonic acid and the n-octyl phosphoric acid, the volume ratio of the dodecylbenzene sulfonic acid to the n-octyl phosphoric acid is 3: 7-6: 4.
7. The method according to claim 1, wherein in the step (2), the lead precursor has a lead bromide concentration of 0.02 to 0.1mol/L and tetra-n-octylammonium bromide concentration of 0.04 to 0.2 mol/L.
8. The method according to claim 1, wherein in the step (3), the stirring reaction time is 1-5 min.
9. The method according to claim 1, wherein in the step (3), the purification solvent is ethyl acetate, methyl acetate, butyl acetate, isopropanol, n-butanol, t-butanol or acetone; the CsPbX3The volume ratio of the quantum dot stock solution to the purification solvent is1:1～1:3。
10. The method of claim 1, wherein the organic solvent is n-hexane, n-octane, or toluene.
CN202110500565.6A 2021-05-08 2021-05-08 Double-acid assisted synthesis of CsPbX3Method for quantum dots Pending CN113214830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110500565.6A CN113214830A (en) 2021-05-08 2021-05-08 Double-acid assisted synthesis of CsPbX3Method for quantum dots

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110500565.6A CN113214830A (en) 2021-05-08 2021-05-08 Double-acid assisted synthesis of CsPbX3Method for quantum dots

Publications (1)

Publication Number Publication Date
CN113214830A true CN113214830A (en) 2021-08-06

Family

ID=77094059

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110500565.6A Pending CN113214830A (en) 2021-05-08 2021-05-08 Double-acid assisted synthesis of CsPbX3Method for quantum dots

Country Status (1)

Country Link
CN (1) CN113214830A (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108793234A (en) * 2018-06-11 2018-11-13 南京理工大学 A kind of CsPbX3Quantum dot room temperature synthetic method
CN110157408A (en) * 2019-05-17 2019-08-23 南京理工大学 The method that equivalent ligand synthesizing efficient stablizes full-inorganic halogen perovskite quantum dot scintillator
CN111081816A (en) * 2019-12-19 2020-04-28 华中科技大学 Perovskite nanocrystalline with alkali metal ion passivated surface defect and preparation and application thereof
CN111117598A (en) * 2019-12-19 2020-05-08 华中科技大学 ABX based on room temperature methodnY3-nLigand regulation method and application of perovskite nano particles
CN111171813A (en) * 2020-01-07 2020-05-19 鲁东大学 All-inorganic perovskite CsPbBr3Preparation method of quantum dot superlattice
CN111205853A (en) * 2020-01-22 2020-05-29 上海应用技术大学 Preparation method of silicon dioxide coated all-inorganic perovskite core-shell structure quantum dot
CN111268724A (en) * 2020-02-14 2020-06-12 南京理工大学 Synthesis of CsPbI by room-temperature nonpolar solvent system3Method for perovskite nanocrystalline
CN112625680A (en) * 2020-12-29 2021-04-09 福州大学 Method for improving stability of mixed halogen perovskite

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108793234A (en) * 2018-06-11 2018-11-13 南京理工大学 A kind of CsPbX3Quantum dot room temperature synthetic method
CN110157408A (en) * 2019-05-17 2019-08-23 南京理工大学 The method that equivalent ligand synthesizing efficient stablizes full-inorganic halogen perovskite quantum dot scintillator
CN111081816A (en) * 2019-12-19 2020-04-28 华中科技大学 Perovskite nanocrystalline with alkali metal ion passivated surface defect and preparation and application thereof
CN111117598A (en) * 2019-12-19 2020-05-08 华中科技大学 ABX based on room temperature methodnY3-nLigand regulation method and application of perovskite nano particles
CN111171813A (en) * 2020-01-07 2020-05-19 鲁东大学 All-inorganic perovskite CsPbBr3Preparation method of quantum dot superlattice
CN111205853A (en) * 2020-01-22 2020-05-29 上海应用技术大学 Preparation method of silicon dioxide coated all-inorganic perovskite core-shell structure quantum dot
CN111268724A (en) * 2020-02-14 2020-06-12 南京理工大学 Synthesis of CsPbI by room-temperature nonpolar solvent system3Method for perovskite nanocrystalline
CN112625680A (en) * 2020-12-29 2021-04-09 福州大学 Method for improving stability of mixed halogen perovskite

Similar Documents

Publication Publication Date Title
Yang et al. All-inorganic cesium lead halide perovskite nanocrystals: synthesis, surface engineering and applications
Zhao et al. Fluorescent carbon dots: fantastic electroluminescent materials for light‐emitting diodes
Zhang et al. High-performance quasi-2D perovskite light-emitting diodes: from materials to devices
Li et al. Perovskite quantum dots for light-emitting devices
Wei et al. An overview on enhancing the stability of lead halide perovskite quantum dots and their applications in phosphor-converted LEDs
Xu et al. A comprehensive review of doping in perovskite nanocrystals/quantum dots: evolution of structure, electronics, optics, and light-emitting diodes
Wu et al. In situ passivation of PbBr64–octahedra toward blue luminescent CsPbBr3 nanoplatelets with near 100% absolute quantum yield
Li et al. Surface ligand engineering for near-unity quantum yield inorganic halide perovskite QDs and high-performance QLEDs
Fang et al. Recent advances and prospects toward blue perovskite materials and light‐emitting diodes
CN110205118B (en) Metal halide perovskite nanocrystalline with passivated surface defects, and preparation and application thereof
WO2009084626A1 (en) Core-shell quantum dot fluorescent fine particle
Hoang et al. Surface treatment of inorganic CsPbI3 nanocrystals with guanidinium iodide for efficient perovskite light-emitting diodes with high brightness
Cao et al. Recent advances and perspectives on light emitting diodes fabricated from halide metal perovskite nanocrystals
Pan et al. Progress in the preparation and application of CsPbX 3 perovskites
Huang et al. Cs4PbBr6/CsPbBr3 nanocomposites for all-inorganic electroluminescent perovskite light-emitting diodes
Yang et al. In situ tetrafluoroborate-modified MAPbBr 3 nanocrystals showing high photoluminescence, stability and self-assembly behavior
Shi et al. Formulation of Water-Resistant Fluorescent Ink from Novel Octagonal CsPbBr3/CsPb2Br5 Composite Plates Coordinated with Thermoplastic Polyurethane
Hu et al. Ligand-modified synthesis of shape-controllable and highly luminescent CsPbBr 3 perovskite nanocrystals under ambient conditions
CN113214830A (en) Double-acid assisted synthesis of CsPbX3Method for quantum dots
Yao et al. Recent progress of single-halide perovskite nanocrystals for advanced displays
CN108531163B (en) High-quantum-yield blue-light perovskite colloidal quantum dot material and synthesis method thereof
Zhao et al. Shape-controlled synthesis of CsPbBr 3 nanorods with bright pure blue emission and high stability
CN113122258A (en) Quantum dot, preparation method thereof and quantum dot light-emitting diode
Zhao et al. Challenges and developments for the blue perovskite nanocrystal light-emitting diodes
CN113817459A (en) CsPbI based on perovskite3Quantum dot and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20210806