CN113182726A - Soldering tin for welding semiconductor and use method of soldering tin - Google Patents
Soldering tin for welding semiconductor and use method of soldering tin Download PDFInfo
- Publication number
- CN113182726A CN113182726A CN202110369687.6A CN202110369687A CN113182726A CN 113182726 A CN113182726 A CN 113182726A CN 202110369687 A CN202110369687 A CN 202110369687A CN 113182726 A CN113182726 A CN 113182726A
- Authority
- CN
- China
- Prior art keywords
- soldering tin
- soldering
- tin
- weight portions
- welding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 238000005476 soldering Methods 0.000 title claims abstract description 63
- 238000003466 welding Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000005057 refrigeration Methods 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 11
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000679 solder Inorganic materials 0.000 claims description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 10
- 238000004321 preservation Methods 0.000 abstract description 8
- 239000002994 raw material Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000003723 Smelting Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/268—Pb as the principal constituent
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention relates to the technical field of semiconductor refrigerating element production raw materials, in particular to soldering tin for welding a semiconductor and a use method of the soldering tin. The soldering tin for soldering semiconductor refrigerating part includes tin 60-63 weight portions, lead 30-33 weight portions, bismuth 0.8-1.2 weight portions, tellurium 0.8-1.2 weight portions, copper 0.2-0.4 weight portions and silver 0.2-0.4 weight portions; the technical scheme of the using method of the soldering tin is realized as follows: the soldering tin is placed in an environment with the temperature of 80-110 ℃ for at least 48 hours before use and is welded under heat preservation. The soldering tin for welding the semiconductor refrigeration piece and the using method of the soldering tin have the advantage that the crystal grains are firmly welded between the upper metal sheet and the lower metal sheet.
Description
Technical Field
The invention relates to the technical field of raw materials for producing semiconductor refrigeration parts, in particular to soldering tin for welding the semiconductor refrigeration parts and a welding using method.
Background
The operating principle of the semiconductor cooling device is based on the peltier principle, and the effect was first discovered in 1834 by j.a.c peltier, i.e. when a circuit consisting of two different conductors a and B is energized with direct current, some other heat is released at the junction in addition to joule heat, while the other junction absorbs heat, and the phenomenon caused by the peltier effect is reversible, and when the current direction is changed, the heat releasing and absorbing junction is changed, and the absorbed and released heat is proportional to the current intensity I.
The semiconductor refrigerating device comprises two ceramic insulating plates positioned on the upper surface and the lower surface, wherein the two ceramic insulating plates are an upper ceramic plate on the upper surface and a lower ceramic plate on the lower surface respectively, a plurality of upper metal sheets are welded on the lower surface of the upper ceramic plate, a plurality of lower metal sheets are welded on the upper surface of the lower ceramic plate, and a plurality of crystal grains are welded between the upper metal sheets and the lower metal sheets.
The crystal grains comprise an N-type semiconductor crystal grain and a P-type semiconductor crystal grain, and soldering tin is used for soldering the crystal grains between the upper metal sheet and the lower metal sheet.
In the prior art, the types of soldering tin are many, for example, the soldering tin composed of 63% of tin and 37% of lead is called eutectic soldering tin, the melting point of the soldering tin is 183 ℃, and in addition, high-temperature lead-free soldering tin, medium-temperature lead-free soldering tin and the like exist.
In the prior art, common soldering tin is used for welding metal sheets, the welding firmness degree between the metal sheets and crystal grains is an important index for measuring the semiconductor refrigeration piece, and the soldering tin in the prior art is easy to open the welding, and the refrigeration piece cannot endure the change of sudden heat and shock cooling and cannot meet the requirement for producing high-quality semiconductor refrigeration pieces.
Disclosure of Invention
The invention aims to solve the defects, provides a soldering tin for welding a semiconductor refrigeration piece, which has firm welding between a metal sheet and a semiconductor crystal grain and is not easy to crack, and also provides a using method of the soldering tin.
The technical scheme of the invention for welding the soldering tin of the semiconductor refrigeration piece is realized as follows: the soldering tin for soldering semiconductor refrigerating part includes tin 60-63 weight portions, lead 30-33 weight portions, bismuth 0.8-1.2 weight portions, tellurium 0.8-1.2 weight portions, copper 0.2-0.4 weight portions and silver 0.2-0.4 weight portions.
Preferably, 61 parts by weight of tin, 31 parts by weight of lead, 1.0 part by weight of bismuth, 1.0 part by weight of tellurium, 0.3 part by weight of copper and 0.3 part by weight of silver are contained.
Preferably, the solder further contains 0.2 to 0.4 parts of zinc.
The technical scheme of the using method of the soldering tin is realized as follows: the soldering tin is placed in an environment with the temperature of 80-110 ℃ for at least 48 hours before use and is welded under heat preservation.
The invention has the beneficial effects that: the soldering tin for welding the semiconductor refrigeration piece and the using method of the soldering tin have the advantage that the crystal grains are firmly welded between the upper metal sheet and the lower metal sheet.
Detailed Description
The present invention will be further described with reference to the following examples.
Example 1
60 g of tin and 30 g of lead are melted, mixed and smelted.
The first solder is prepared.
Example 2
60 grams of tin, 30 grams of lead, 0.8 grams of bismuth, and 0.8 grams of tellurium were taken.
And preparing the second soldering tin.
Example 3
60 g of tin, 30 g of lead, 0.2 g of copper and 0.2 g of silver are melted, mixed and smelted.
And preparing the third soldering tin.
Example 4
Taking 60 g of tin, 30 g of lead, 0.8 g of bismuth, 0.8 g of tellurium, 0.2 g of copper and 0.2 g of silver, melting, mixing and smelting.
And obtaining the fourth soldering tin.
Example 5
Taking 63 g of tin, 33 g of lead, 1.2 g of bismuth, 1.2 g of tellurium, 0.4 g of copper and 0.4 g of silver, melting, mixing and smelting.
And preparing the fifth soldering tin.
Example 6
Taking 61 g of tin, 31 g of lead, 1 g of bismuth, 1 g of tellurium, 0.3 g of copper and 0.0 g of silver, melting, mixing and smelting.
And obtaining the sixth soldering tin.
Weld the refrigeration piece respectively with above-mentioned soldering tin, be about to the crystalline grain welding at last sheetmetal under and between the sheetmetal, adopt welding under the normal atmospheric temperature, get respectively that welding 2000 pieces refrigerate the piece and obtain first group respectively and refrigerate the piece (with first soldering tin welded refrigeration piece, lower with), second group refrigerate the piece, third group refrigerate the piece, fourth group refrigerate the piece, fifth group refrigerate the piece, sixth group refrigerate the piece, the following table is the quantity that the semiconductor refrigeration that damages because of welding after a period will:
the purpose of soldering a semiconductor crystal grain to a conductive plate firmly can be achieved only by a solder comprising, by weight, 60 to 63 parts of tin, 30 to 33 parts of lead, 0.8 to 1.2 parts of bismuth, 0.8 to 1.2 parts of tellurium, 0.2 to 0.4 parts of copper, and 0.2 to 0.4 parts of silver, and there is no characteristic of soldering firmly either in the absence of bismuth and tellurium or in the absence of copper and silver.
The above examples were repeated, and 0.2 to 0.4 parts of zinc was further added to the above solder. According to the testing method, the welded refrigerating piece is firmer and more durable.
And (4) conclusion: it is preferable to add 0.2 to 0.4 part of zinc to the solder.
And placing the fourth soldering tin, the fifth soldering tin and the sixth soldering tin at normal temperature and directly soldering to obtain 2000 cold welding refrigerating parts respectively. And placing the fourth soldering tin, the fifth soldering tin and the sixth soldering tin in an environment of 80-110 ℃ for 48 hours, and performing heat preservation welding to obtain 2000 heat preservation welding refrigerators respectively. The amount lost by open welding after 200 days is shown in the table
The above-described heat-insulated and welded refrigerating device was not changed when the solder was kept at a temperature for more than 60 hours.
The heat-insulating welding refrigerating piece is also suitable for adding 0.2-0.4 part of zinc into soldering tin.
And placing the first soldering tin, the second soldering tin and the third soldering tin in an environment of 80-110 ℃ for 48 hours, and performing heat preservation welding to obtain a refrigerating piece obtained by heat preservation welding of the refrigerating piece and a refrigerating piece obtained by direct welding at normal temperature respectively, wherein the welding firmness degree is not changed.
The fourth soldering tin, the fifth soldering tin and the sixth soldering tin are placed in an environment of 80-110 ℃ for 48 hours and are welded with other components in a heat preservation mode, and the welding firmness degree of iron, iron copper and the like is not changed.
And (4) conclusion: the solder is placed in an environment of 80-110 ℃ for 48 hours and is subjected to heat preservation welding, so that the welding firmness can be improved, and the method is only suitable for welding the fourth solder, the fifth solder and the sixth solder to the semiconductor.
The above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention, and the technical solutions are all covered in the scope of the description of the present invention.
Claims (4)
1. The soldering tin for soldering semiconductor refrigerating part includes tin 60-63 weight portions, lead 30-33 weight portions, bismuth 0.8-1.2 weight portions, tellurium 0.8-1.2 weight portions, copper 0.2-0.4 weight portions and silver 0.2-0.4 weight portions.
2. The solder for soldering a semiconductor cooler as set forth in claim 1, wherein: comprising 61 parts by weight of tin, 31 parts by weight of lead, 1.0 part by weight of bismuth, 1.0 part by weight of tellurium, 0.3 part by weight of copper and 0.3 part by weight of silver.
3. The solder for soldering a semiconductor cooler according to claim 1 or 2, wherein: the soldering tin also contains 0.2-0.4 parts of zinc.
4. The use method of the soldering tin for welding the semiconductor refrigeration piece comprises the following steps: soldering semiconductor dies and metal sheets using the solder according to claims 1-3, the solder being placed in an environment of 80-110 ℃ for at least 48 hours prior to soldering and being soldered at an elevated temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110369687.6A CN113182726A (en) | 2021-04-07 | 2021-04-07 | Soldering tin for welding semiconductor and use method of soldering tin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110369687.6A CN113182726A (en) | 2021-04-07 | 2021-04-07 | Soldering tin for welding semiconductor and use method of soldering tin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113182726A true CN113182726A (en) | 2021-07-30 |
Family
ID=76975063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110369687.6A Pending CN113182726A (en) | 2021-04-07 | 2021-04-07 | Soldering tin for welding semiconductor and use method of soldering tin |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113182726A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5328521A (en) * | 1993-03-08 | 1994-07-12 | E. I. Du Pont De Nemours And Company | Kinetic solder paste composition |
| CN1126647A (en) * | 1994-08-02 | 1996-07-17 | 昭和电工株式会社 | Solder paste for ball grid array |
| CN101132881A (en) * | 2004-12-01 | 2008-02-27 | 爱尔发加热有限公司 | Solder alloy |
| CN102416513A (en) * | 2011-12-19 | 2012-04-18 | 吴江市合成电子机械厂 | Preheating tin soldering machine |
| CN202845984U (en) * | 2012-11-16 | 2013-04-03 | 河源市南和通讯实业有限公司 | Preheating device of automatic soldering machine |
| CN108544120A (en) * | 2018-03-05 | 2018-09-18 | 西安理工大学 | A kind of photovoltaic welding belt tin-lead base low-melting brazing filler metal alloy and preparation method thereof |
| EP3401053A1 (en) * | 2017-05-11 | 2018-11-14 | Panasonic Intellectual Property Management Co., Ltd. | Solder alloy and bonded structure using the same |
| CN108856952A (en) * | 2018-05-24 | 2018-11-23 | 太仓荣中机电科技有限公司 | A kind of soldering gun release mechanism |
| EP3461580A1 (en) * | 2017-09-29 | 2019-04-03 | Panasonic Intellectual Property Management Co., Ltd. | Solder alloy and junction structure using same |
-
2021
- 2021-04-07 CN CN202110369687.6A patent/CN113182726A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5328521A (en) * | 1993-03-08 | 1994-07-12 | E. I. Du Pont De Nemours And Company | Kinetic solder paste composition |
| CN1126647A (en) * | 1994-08-02 | 1996-07-17 | 昭和电工株式会社 | Solder paste for ball grid array |
| CN101132881A (en) * | 2004-12-01 | 2008-02-27 | 爱尔发加热有限公司 | Solder alloy |
| CN102416513A (en) * | 2011-12-19 | 2012-04-18 | 吴江市合成电子机械厂 | Preheating tin soldering machine |
| CN202845984U (en) * | 2012-11-16 | 2013-04-03 | 河源市南和通讯实业有限公司 | Preheating device of automatic soldering machine |
| EP3401053A1 (en) * | 2017-05-11 | 2018-11-14 | Panasonic Intellectual Property Management Co., Ltd. | Solder alloy and bonded structure using the same |
| EP3461580A1 (en) * | 2017-09-29 | 2019-04-03 | Panasonic Intellectual Property Management Co., Ltd. | Solder alloy and junction structure using same |
| CN108544120A (en) * | 2018-03-05 | 2018-09-18 | 西安理工大学 | A kind of photovoltaic welding belt tin-lead base low-melting brazing filler metal alloy and preparation method thereof |
| CN108856952A (en) * | 2018-05-24 | 2018-11-23 | 太仓荣中机电科技有限公司 | A kind of soldering gun release mechanism |
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| PB01 | Publication | ||
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Application publication date: 20210730 |