CN113130470B - Micro-display structure and manufacturing method thereof - Google Patents
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- CN113130470B CN113130470B CN202110431761.2A CN202110431761A CN113130470B CN 113130470 B CN113130470 B CN 113130470B CN 202110431761 A CN202110431761 A CN 202110431761A CN 113130470 B CN113130470 B CN 113130470B
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- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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Abstract
The invention discloses a micro-display structure which comprises a plurality of main control chips, a driving chip and a heat dissipation type frame body, wherein the micro-display structure is a multi-chip integrated embedded structure, the main control chips are manufactured on the driving chip, the main control chips and the driving chip are electrically connected with an IC chip structure, and the IC chip is connected with a chip placing area 5 on the heat dissipation type frame body. The invention comprises two or more main control chips and driving chips, reduces IC process difficulty and process stability risk by adopting a multi-chip scheme, is beneficial to combination of various functional chips, selects proper chips according to actual needs and can add new chips to realize new functions. The structure is the rectangle heat dissipation formula framework of shaping on the chip, can realize dispelling the heat fast, improves the life of chip, reduces the influence that the temperature risees the unusual promotion of silica-based OLED luminance fast. The invention also provides a manufacturing method of the micro-display structure.
Description
Technical Field
The invention belongs to the technical field of display screens, and particularly relates to a micro-display structure and a manufacturing method thereof.
Background
The performance requirements of the silicon-based OLED on the IC chip are gradually improved, functions are continuously increased according to application scenes, the IC design is increasingly complex, the IC process difficulty is increased, the risk of poor process is brought, the IC is continuously promoted to be re-modified, and the cost is increased. Therefore, a new design scheme and a process capability improvement scheme are required, or a multi-chip integration scheme is adopted to split the functions of the main control chip and the driving chip, so that only the edition of the main control chip is required to be changed when a new function is added, and the driving chip is not changed or is slightly changed. The heat generated by the IC during operation affects the brightness of the silicon-based OLED, and generally needs to be compensated for temperature, and a heat dissipation structure needs to be designed on a small-sized packaging structure to facilitate heat dissipation and prolong the service life of the integrated circuit.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a micro display structure, which adopts a multi-chip scheme to reduce the IC process difficulty and the process stability risk, is beneficial to the combination of various functional chips, selects a proper chip according to the actual requirement and can add a new chip to realize a new function; the invention also provides a manufacturing method of the micro-display structure.
In order to achieve the purpose, the technical scheme of the invention is as follows: a microdisplay architecture characterized by: the micro-display structure is of a multi-chip integrated embedded structure, the main control chip is manufactured on the driving chip, the main control chip is electrically connected with the driving chip and is connected with an IC chip structure, and the IC chip is connected with a chip placement area on the heat dissipation type frame body.
Furthermore, the micro-display structure also comprises a display area, and the display area is manufactured on the driving chip.
Furthermore, the display area comprises an Anode + OLED layer, a TFE layer, a CF layer and a CG layer, wherein the Anode + OLED layer, the TFE layer, the CF layer and the CG layer are stacked up and down, the Anode + OLED layer, the TFE layer, the CF layer and the CG layer are sequentially arranged from bottom to top, and the Anode + OLED layer is connected to the driving chip.
Furthermore, the microdisplay structure further comprises a Bonding area, wherein the Bonding area is manufactured on the driving chip and is arranged between the display area and the main control chip or is arranged at the edge of the driving chip.
Furthermore, a plurality of steps are arranged on the inner wall of the heat dissipation type frame body, and a heat dissipation mechanism used for dissipating heat of the IC chip is arranged on the steps.
Further, the heat dissipation mechanism comprises an upper heat dissipation mechanism for dissipating heat from the front side of the IC chip and a lower heat dissipation mechanism for dissipating heat from the back side of the IC chip, and the IC chip is located between the upper heat dissipation mechanism and the lower heat dissipation mechanism.
Further, go up heat dissipation mechanism and include inserting groove, pressure spring, cooling tube and guide way, the inserting groove sets up on the wall of the front and back both sides of step, and the pressure spring setting is in the inserting groove, and the both ends of cooling tube support and lean on the pressure spring, and the guide way sets up on the diapire of step.
Furthermore, lower heat dissipation mechanism includes the fixed plate, the shaping is at the oblique connecting plate of putting of fixed plate one end and the heat-conducting layer of setting at the bottom, and fixed plate detachably sets up on the wall of inserting groove below step side.
Further, the heat conduction layer comprises a single-layer structure and a multi-layer structure which are composed of graphite, copper or silver good heat conduction metal; the radiating pipe is internally provided with fibers and water, and the insertion groove is a strip-shaped insertion groove.
Based on the above microdisplay structure, the present invention further provides a method for fabricating a microdisplay structure, the method comprising:
a. the micro display adopts a multi-chip integrated embedded structure and comprises a plurality of main control chips and driving chips, wherein the main control chips are manufactured on the driving chips, the circuit pattern transfer is completed in the main control chip area through exposure, the circuit forming is completed through etching, and the cooperative work is formed in a mode of electrically connecting the driving chips;
a display area structure formed by an anode + OLED layer, a TFE layer, a CF layer and a CG layer is manufactured on a driving chip, a Bonding area is arranged between the display area and a main control chip or at the edge of the driving chip, the Bonding area can adopt a wire Bonding or FPC mixed Bonding scheme, and the overall structure of the micro-display can be connected with an external module in a PCB and FPC manner;
c. the chip structure that main control chip, driver chip, display area and Bonding district constitute places the district at the chip of rectangle heat dissipation formula framework through the OCA laminating, and what the cooling tube in the heat dissipation formula framework adopted is the cooling tube heat dissipation technique of using on the display card chip, is equipped with fibre and water in the cooling tube.
The technical scheme adopted by the invention has the advantages that:
1. the invention adopts a multi-chip scheme to reduce the IC process difficulty and the process stability risk, is beneficial to the combination of various functional chips, selects a proper chip according to the actual requirement and can add a new chip to realize a new function. The structure is the rectangle heat dissipation formula framework of shaping on the chip, can realize dispelling the heat fast, improves the life of chip, reduces the influence that the temperature risees the unusual promotion of silica-based OLED luminance fast.
2. The chip slicing design of the micro display can reduce the design difficulty and the process difficulty, the cost can be reduced and the design period can be shortened by separating the driving control module and the display module, the main control chip and the driving display chip adopt different processes and exert the advantages of the main control chip and the driving display chip, the power consumption of the chips can be reduced, the yield, the service life and the reliability of the chips can be improved, and the COC applied to the silicon-based OLED micro display can improve the frame frequency and the resolution and provide more functions and intelligent design.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a schematic structural diagram of a main control chip, a driving chip, an OLED display area and a Bonding area according to the present invention;
FIG. 2 is a schematic top view of a chip heat dissipation frame according to the present invention;
fig. 3 is a partial schematic view of an upper heat dissipation mechanism according to the present invention.
The labels in the above figures are: 1. a main control chip; 2. a driving chip; 3. a display area; 31. an Anode + OLED layer; 32. a TFE layer; 33. a CF layer; 34. a CG layer; 4. a binding area; 5. a heat dissipating frame; 51. a chip placement area; 52. and (4) a step.
Detailed Description
In the present invention, it is to be understood that the term "length"; "Width"; "Up"; "Down"; "front"; "Back"; "left"; "Right"; "vertical"; "horizontal"; "Top"; "bottom" "inner"; "outer"; "clockwise"; "counterclockwise"; "axial"; "planar direction"; "circumferential" and the like indicate orientations or positional relationships that are based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the indicated device or element must have a particular orientation; constructed and operative in a particular orientation and therefore should not be construed as limiting the invention.
The English related by the invention has the corresponding meanings as follows: and an Anode: anode, OLED: organic light emitting diode, TFE: film encapsulation, CF: color filtering, CG: cover glass, die bonding: binding, wire binding: routing and binding, FPC: flexible circuit board, PCB: a printed circuit board; OCA (optical Clear adhesive), which is a special double-sided adhesive without base material and optical transparency, belongs to the pressure-sensitive adhesive. Colorless and transparent, the light transmittance is more than 90 percent, the cementing strength is good, the cement can be solidified at room temperature or middle temperature, and the curing shrinkage is small.
As shown in fig. 1 to 3, a microdisplay configuration characterized by: the micro display device comprises a plurality of main control chips 1, a driving chip 2 and a heat dissipation type frame body 5, wherein the micro display structure is a multi-chip integrated embedded structure, the main control chip 1 is manufactured on the driving chip 2, the main control chip 1 and the driving chip 2 are electrically connected with an IC chip structure, and the IC chip is connected with a chip placing area 51 on the heat dissipation type frame body 5. The invention comprises two or more main control chips 1 and driving chips 2, reduces IC process difficulty and process stability risk by adopting a multi-chip scheme, is beneficial to combination of various functional chips, selects proper chips according to actual needs and can add new chips to realize new functions. The structure is the rectangle heat dissipation formula framework of shaping on the chip, can realize dispelling the heat fast, improves the life of chip, reduces the influence that the temperature risees the unusual promotion of silica-based OLED luminance fast.
The microdisplay configuration further includes a display region 3, the display region 3 being fabricated on the driver chip 2. The display area 3 comprises an Anode + OLED layer 31, a TFE layer 32, a CF layer 33 and a CG layer 34, wherein the Anode + OLED layer 31, the TFE layer 32, the CF layer 33 and the CG layer 34 are stacked up and down, the Anode + OLED layer 31, the TFE layer 32, the CF layer 33 and the CG layer 34 are arranged from bottom to top in sequence, and the Anode + OLED layer 31 is connected to the driving chip 2.
The micro display structure further comprises a Bonding area 4, wherein the Bonding area 4 is manufactured on the driving chip 2 and is arranged between the display area 3 and the main control chip 1 or is arranged at the edge of the driving chip 2.
The novel micro-display chip slicing design can reduce design difficulty and process difficulty, the drive control module and the display module can reduce cost and shorten design period by separation, the main control chip and the drive display chip adopt different processes and exert advantages of the main control chip and the drive display chip, chip power consumption can be reduced, the chip yield, the service life and the reliability are improved, and the COC (chip on chip) is applied to a silicon-based OLED micro-display, so that the frame frequency and the resolution can be improved, and more functions and intelligent design are provided.
The inner wall of the heat dissipating frame 5 is provided with a plurality of steps 52, and the steps 52 are provided with a heat dissipating mechanism for dissipating heat from the IC chip. The heat dissipation mechanism comprises an upper heat dissipation mechanism used for dissipating heat of the front side of the IC chip and a lower heat dissipation mechanism used for dissipating heat of the back side of the IC chip, and the IC chip is located between the upper heat dissipation mechanism and the lower heat dissipation mechanism.
A partition 57 for partitioning the chip placement area 51 is further provided in the heat dissipation frame 5, both ends of the partition 57 are in close contact with the inner wall of the heat dissipation frame 5, and the bottom of the partition 57 is in contact with a step surface of an upper step in the heat dissipation frame 5. On one hand, the chip placing region 51 can be divided to place various chips and contact and collision among the chips; on the other hand, the heat radiation type housing 5 can be reinforced to enhance the structural strength of the heat radiation type housing 5. Preferably, a silicon rubber pad is arranged on the plate surface of the partition plate 57, and the partition plate 57 is placed to cause collision and abrasion to the chip.
The upper heat dissipation mechanism comprises plug-in connection grooves 53, pressure springs 54, heat dissipation pipes 55 and guide grooves 56, the plug-in connection grooves 53 are arranged on the front side wall and the rear side wall of the step 52, the pressure springs 54 are arranged in the plug-in connection grooves, two ends of each heat dissipation pipe 55 abut against the pressure springs, the guide grooves 56 are arranged on the bottom wall of the step 52, the heat dissipation pipes 55 are internally provided with return pipes 551, the return pipes 551 pass through the guide grooves 56 and enter the heat dissipation pipes 55 of the adjacent plug-in connection grooves 53, and the return pipes 551 in the adjacent heat dissipation pipes 55 are communicated with each other; the arrangement of the return pipe increases the heat dissipation area, prolongs the passing time of the cooling liquid on the step, and further improves the cooling effect. Preferably, the insertion groove is a strip-shaped insertion groove; the radiating pipe adopts the radiating pipe radiating technology adopted on the display card chip, and fibers and water are arranged in the radiating pipe.
The lower heat dissipation mechanism comprises a fixing plate, an inclined connecting plate and a heat conduction layer, wherein the inclined connecting plate is formed at one end of the fixing plate, the heat conduction layer is arranged at the bottom layer, the fixing plate is detachably arranged on the wall of the step side below the inserting groove, and the preferable heat conduction layer comprises a single-layer structure and a multi-layer structure which are composed of good heat conduction metals such as graphite, copper or silver. The LED backlight module can realize quick heat dissipation, prolong the service life of a chip, and reduce the influence of quick rise of temperature on abnormal brightness improvement of the silicon-based OLED.
The fixed plate is located at the bottom of the heat dissipation type frame body 5, one end of the connecting plate is connected to the side wall of the heat dissipation type frame body 5, and the other end of the connecting plate is connected to the fixed plate.
Based on the micro-display structure, the invention also provides a manufacturing method of the micro-display structure, which comprises the following steps:
a. the micro display adopts a multi-chip integrated embedded structure and comprises a plurality of main control chips and driving chips, wherein the main control chips are manufactured on the driving chips, the circuit pattern transfer is completed in the main control chip area through exposure, the circuit forming is completed through etching, and the cooperative work is formed in a mode of electrically connecting the driving chips;
a display area structure formed by the anode + OLED layer 31, the TFE layer 32, the CF layer 33 and the CG layer 34 is manufactured on a driving chip, a Bonding area is arranged between the display area and a main control chip or at the edge of the driving chip, the Bonding area can adopt a wire Bonding or FPC hybrid Bonding scheme, and the overall structure of the micro-display can be connected with an external module in a PCB and FPC manner;
c. the chip structure that main control chip 1, driver chip 2, display area 3 and Bonding district 4 constitute places the district at the chip of rectangle heat dissipation formula framework through the OCA laminating, and what the cooling tube in the heat dissipation formula framework 5 adopted is the cooling tube heat dissipation technique of using on the display card chip, is equipped with fibre and water in the cooling tube.
The multi-chip scheme adopted by the invention can reduce the IC process difficulty and the process stability risk, is beneficial to the combination of various functional chips, selects a proper chip according to the actual requirement and can add a new chip to realize a new function; the heat radiation structure can realize quick heat radiation, prolong the service life of the chip and reduce the influence of quick rise of temperature on abnormal brightness improvement of the silicon-based OLED.
The invention is described above with reference to the accompanying drawings, it is obvious that the specific implementation of the invention is not limited by the above-mentioned manner, and it is within the scope of the invention to adopt various insubstantial modifications of the technical solution of the invention or to apply the concept and technical solution of the invention directly to other occasions without modification.
Claims (5)
1. A microdisplay architecture characterized by: the micro display comprises a plurality of main control chips (1), a driving chip (2) and a heat dissipation type frame body (5), wherein the micro display structure is a multi-chip integrated embedded structure, the main control chips (1) are manufactured on the driving chip (2), the main control chips (1) and the driving chip (2) are electrically connected with an IC chip structure, and the IC chip is connected with a chip placement area (51) on the heat dissipation type frame body (5); the micro-display structure further comprises a display area (3), and the display area (3) is manufactured on the driving chip (2); the micro display structure further comprises a Bonding area (4), wherein the Bonding area (4) is manufactured on the driving chip (2) and is arranged between the display area (3) and the main control chip (1) or is arranged at the edge of the driving chip (2); a plurality of steps (52) are arranged on the inner wall of the heat dissipation type frame body (5), and a heat dissipation mechanism for dissipating heat of the IC chip is arranged on the steps (52); the heat dissipation mechanism comprises an upper heat dissipation mechanism for dissipating heat of the front side of the IC chip and a lower heat dissipation mechanism for dissipating heat of the back side of the IC chip, and the IC chip is positioned between the upper heat dissipation mechanism and the lower heat dissipation mechanism; the upper heat dissipation mechanism comprises an insertion groove, a pressure spring, a heat dissipation pipe and a guide groove, the insertion groove is formed in the front side wall and the rear side wall of the step (52), the pressure spring is arranged in the insertion groove, two ends of the heat dissipation pipe abut against the pressure spring, and the guide groove is formed in the bottom wall of the step (52); the heat dissipation pipe (55) is internally provided with a return pipe (551), the return pipe (551) enters the heat dissipation pipe (55) of the adjacent plug-in groove (53) from the guide groove (56), and the return pipes (551) in the adjacent heat dissipation pipes (55) are communicated with each other; the heat dissipation type frame body (5) is also internally provided with a partition plate (57) for separating the chip placing area (51), two ends of the partition plate (57) are in close contact with the inner wall of the heat dissipation type frame body (5), and the bottom of the partition plate (57) is in contact with the step surface of the upper step in the heat dissipation type frame body (5).
2. A microdisplay architecture according to claim 1 in which: the display area (3) comprises an Anode + OLED layer (31), a TFE layer (32), a CF layer (33) and a CG layer (34), wherein the Anode + OLED layer (31), the TFE layer (32), the CF layer (33) and the CG layer (34) are stacked up and down, the Anode + OLED layer (31), the TFE layer (32), the CF layer (33) and the CG layer (34) are sequentially arranged from bottom to top, and the Anode + OLED layer (31) is connected onto the driving chip (2).
3. A microdisplay architecture according to claim 2 in which: the lower heat dissipation mechanism comprises a fixed plate, an inclined connecting plate and a heat conduction layer, wherein the inclined connecting plate is formed at one end of the fixed plate, the heat conduction layer is arranged at the bottom layer, and the fixed plate is detachably arranged on the wall of the step side below the insertion groove.
4. A microdisplay architecture according to claim 3 in which: the heat conduction layer comprises a single-layer structure and a multi-layer structure which are composed of graphite, copper or silver good heat conduction metal; the radiating pipe is internally provided with fibers and water, and the insertion groove is a strip-shaped insertion groove.
5. A method for manufacturing a micro-display structure is characterized in that: a microdisplay structure according to any of claims 1-4 in which the method of fabrication comprises:
a. the micro display adopts a multi-chip integrated embedded structure and comprises a plurality of main control chips and driving chips, wherein the main control chips are manufactured on the driving chips, the circuit pattern transfer is completed in the main control chip area through exposure, the circuit forming is completed through etching, and the cooperative work is formed in a mode of electrically connecting the driving chips;
a display area structure formed by an anode + OLED layer (31), a TFE layer (32), a CF layer (33) and a CG layer (34) is manufactured on a driving chip, a Bonding area is arranged between the display area and a main control chip or at the edge of the driving chip, a wire Bonding or FPC hybrid Bonding scheme can be adopted in the Bonding area, and the overall structure of the micro-display can be connected with an external module in a PCB and FPC manner;
c. the chip structure that main control chip (1), driver chip (2), display area (3) and Bonding district (4) constitute places the district at the chip of rectangle heat dissipation formula framework through the OCA laminating, and what the cooling tube in heat dissipation formula framework (5) adopted is the cooling tube heat dissipation technique of using on the display card chip, is equipped with fibre and water in the cooling tube.
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| CN111180600A (en) * | 2020-01-06 | 2020-05-19 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting diode device structure and manufacturing method thereof |
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| CN100514633C (en) * | 2006-09-12 | 2009-07-15 | 日月光半导体制造股份有限公司 | System-in-package structure |
| WO2012016047A1 (en) * | 2010-07-28 | 2012-02-02 | Flex Lighting Ii, Llc | Light emitting device with optical redundancy |
| CN105810845B (en) * | 2016-05-17 | 2018-05-25 | 武汉华星光电技术有限公司 | OLED device packaging structure, OLED device and display screen |
| CN108962849B (en) * | 2016-08-22 | 2020-10-16 | 山东汉旗科技有限公司 | A method of packaging an integrated circuit |
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| CN111180600A (en) * | 2020-01-06 | 2020-05-19 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting diode device structure and manufacturing method thereof |
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