CN113130304A - Wet etching method for electrode metal layer of silicon carbide device - Google Patents
Wet etching method for electrode metal layer of silicon carbide device Download PDFInfo
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- CN113130304A CN113130304A CN201911391962.3A CN201911391962A CN113130304A CN 113130304 A CN113130304 A CN 113130304A CN 201911391962 A CN201911391962 A CN 201911391962A CN 113130304 A CN113130304 A CN 113130304A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 62
- 239000002184 metal Substances 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000001039 wet etching Methods 0.000 title claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 114
- 239000007788 liquid Substances 0.000 claims abstract description 68
- 230000008569 process Effects 0.000 claims abstract description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Abstract
The present disclosure provides a wet etching method for an electrode metal layer of a silicon carbide device. The method comprises the following steps: adjusting the position of a SiC wafer to be etched to enable an electrode metal layer to be etched on the SiC wafer to be vertical to the liquid level of etching liquid and enable a main positioning edge of the SiC wafer to form a first preset angle with the liquid level of the etching liquid; wherein the first preset angle is 40 to 50 °; immersing the silicon carbide wafer into the etching liquid according to a preset frequency so as to etch the electrode metal layer; and taking out the silicon carbide wafer immersed in the etching liquid each time, and standing for a preset time. The etching difference of each tube core in the longitudinal direction and the transverse direction in the electrode metal layer etching process can be eliminated, hydrogen bubbles which are generated in the electrode metal layer etching process and are attached to the surface of the electrode metal layer can be eliminated, and etching residues are avoided. The electrical property and the yield of the device are improved, and the manufacturing cost is saved.
Description
Technical Field
The disclosure relates to the technical field of semiconductor devices, in particular to a wet etching method for an electrode metal layer of a silicon carbide device.
Background
The silicon carbide material has the advantages of wide band gap, high thermal conductivity, high breakdown field strength, high saturation velocity and the like, and the manufactured power device can greatly exert the characteristics of high temperature, high frequency and low loss, so that the silicon carbide material has great application prospects in the aspects of high pressure, high temperature, high frequency, high power, strong radiation and the like.
In the manufacturing process of the silicon carbide device, the wet etching mode of the electrode metal layer on the silicon carbide wafer mainly comprises a rotary spraying mode and a tank body soaking mode. In the tank body soaking etching mode, due to the vertical shaking of the mechanical arm, etching bubbles and other reasons, the difference between the transverse (X direction) etching rate and the longitudinal (Y direction) etching rate of the same silicon carbide wafer is large, large-area etching residues exist in the transverse (X direction) or the longitudinal (Y direction), particularly the etching uniformity of the edge of a tube core is poor, and the electrical performance of a silicon carbide device and the qualification rate of products are influenced finally.
Disclosure of Invention
In order to solve the problems, the present disclosure provides a wet etching method for an electrode metal layer of a silicon carbide device.
In a first aspect, the present disclosure provides a wet etching method for an electrode metal layer of a silicon carbide device, including:
adjusting the position of a SiC wafer to be etched to enable an electrode metal layer to be etched on the SiC wafer to be vertical to the liquid level of etching liquid and enable a main positioning edge of the SiC wafer to form a first preset angle with the liquid level of the etching liquid; wherein the first preset angle is 40 to 50 °;
immersing the silicon carbide wafer into the etching liquid according to a preset frequency so as to etch the electrode metal layer; and taking out the silicon carbide wafer immersed in the etching liquid each time, and standing for a preset time.
According to an embodiment of the present disclosure, preferably, the step of immersing the silicon carbide wafer into the etching solution at a preset frequency to etch the electrode metal layer includes:
and immersing the silicon carbide wafer into the etching liquid according to a preset frequency and controlling the silicon carbide wafer to vertically shake in the etching liquid so as to accelerate the etching rate of the electrode metal layer.
According to the embodiment of the present disclosure, preferably, a first preset angle is formed between the main positioning edge of the sic wafer and the liquid level of the etching liquid, so that the lateral edge of the tube core on the sic wafer and the liquid level of the etching liquid form the first preset angle, and a second preset angle is formed between the longitudinal edge of the tube core and the liquid level of the etching liquid, so as to eliminate the etching difference between the lateral edge and the longitudinal edge;
the transverse edge is an edge of the tube core parallel to the main positioning edge, the longitudinal edge is an edge of the tube core perpendicular to the main positioning edge, and the first preset angle and the second preset angle are complementary.
According to an embodiment of the present disclosure, preferably, the preset frequency is 1 to 5 minutes/time.
According to an embodiment of the present disclosure, preferably, the preset time period is 1 second to 20 seconds, so as to eliminate hydrogen bubbles generated during the etching process and attached to the surface of the electrode metal layer.
According to the embodiment of the present disclosure, preferably, the thickness of the electrode metal layer is greater than or equal to 1 um.
According to the embodiment of the present disclosure, preferably, the material of the electrode metal layer is an AlSi compound.
According to the embodiment of the present disclosure, preferably, the content of Si in the electrode metal layer is less than 20%.
By adopting the technical scheme, the following technical effects can be at least achieved:
the wet etching method for the electrode metal layer of the silicon carbide device comprises the steps of adjusting the position of a silicon carbide wafer before etching to enable the electrode metal layer to be etched on the silicon carbide wafer to be perpendicular to the liquid level of etching liquid, enabling the main positioning edge of the silicon carbide wafer to form a first preset angle with the liquid level of the etching liquid, eliminating the longitudinal and transverse etching difference of each tube core on the silicon carbide wafer in the etching process of the electrode metal layer, and improving the etching uniformity of the edge of the tube core. Immersing the silicon carbide wafer into the etching liquid according to a preset frequency so as to etch the electrode metal layer; the SiC wafer immersed in the etching liquid is taken out and stands for a preset time each time, so that hydrogen bubbles generated in the etching process and attached to the surface of the electrode metal layer can be eliminated, and etching residues caused by the fact that the etching liquid is separated from the electrode metal layer by the hydrogen bubbles are avoided. The method is simple to operate and easy to realize, shortens the time of the electrode metal layer etching process, improves the electrical performance and the yield of the silicon carbide-based power device, and saves the manufacturing cost.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:
FIG. 1 is a schematic flow chart illustrating a method for wet etching an electrode metal layer of a silicon carbide device according to an exemplary embodiment of the present disclosure;
fig. 2 is an angled schematic view of a silicon carbide wafer during a wet etch process, according to an exemplary embodiment of the present disclosure.
Detailed Description
Embodiments of the present disclosure will be described in detail with reference to the accompanying drawings and examples, so that how to apply technical means to solve technical problems and achieve the corresponding technical effects can be fully understood and implemented. The embodiments and the features of the embodiments of the present disclosure can be combined with each other without conflict, and the formed technical solutions are all within the protection scope of the present disclosure. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. The following detailed description of the preferred embodiments of the present disclosure, however, the present disclosure may have other embodiments in addition to these detailed descriptions.
As shown in fig. 1, the wet etching method for an electrode metal layer of a silicon carbide device provided in this embodiment includes the following steps:
step S101: as shown in fig. 2, adjusting the position of the sic wafer 100 to be etched, so that the electrode metal layer 102 to be etched on the sic wafer 100 is perpendicular to the liquid level of the etching solution, and the main positioning edge 103 of the sic wafer 100 and the liquid level of the etching solution form a first preset angle θ; wherein, the first preset angle theta is 40-50 deg.
Specifically, the silicon carbide wafer 100 is fixed in an etching basket, the position of the silicon carbide wafer 100 in the etching basket is adjusted through a piece arranging device, so that an electrode metal layer 102 to be etched on the silicon carbide wafer 100 is perpendicular to the liquid level of etching liquid, the silicon carbide wafer 100 can be vertically inserted into the etching liquid, a main positioning edge 103 of the silicon carbide wafer 100 and the liquid level of the etching liquid form a first preset angle theta, and the first preset angle theta is 40-50 degrees. The secondary alignment edge 104 of the silicon carbide wafer 100 is at an angle of 90-theta to the surface of the etching liquid.
The main positioning edge 103 is a positioning edge along the X direction, and the sub positioning edge 104 is a positioning edge along the Y direction. The primary locating edge 103 is perpendicular to the secondary locating edge 104.
Die 101 is a chiplet having integrated silicon carbide power devices on silicon carbide wafer 100.
The silicon carbide wafer 100 is a silicon carbide wafer to be wet-etched after the processes of depositing an electrode metal layer 102, homogenizing, exposing and developing.
The electrode metal layer 102 is an aluminum metal layer, and the material is an AlSi compound, wherein the percentage content of Si is less than 20%, and the thickness of the electrode metal layer 102 is greater than or equal to 1 um.
In this embodiment, the wet etching method of the electrode metal layer 102 is a bath immersion method.
In the production of an aluminum metal layer, a heated mixed solution of phosphoric acid, nitric acid, sulfuric acid and water is generally used as an etching solution. The nitric acid mainly serves to increase the etching rate, and if too much nitric acid affects the corrosion resistance of the photoresist, sulfuric acid is used to improve the etching uniformity.
Step S102: immersing the silicon carbide wafer 100 into an etching solution according to a preset frequency beta to etch the electrode metal layer 102; wherein, the silicon carbide wafer 100 immersed in the etching solution is taken out and stands for a preset time T each time.
Specifically, the etching basket fixed with the silicon carbide wafer 100 is immersed into the etching solution according to the preset frequency β, so that the silicon carbide wafer 100 is immersed into the etching solution to etch the electrode metal layer 102, and in the etching process, the mechanical arm can shake the etching basket up and down in the etching solution, namely, the mechanical arm controls the silicon carbide wafer 100 to shake up and down, so that the etching rate is accelerated, and the process time is shortened. Wherein, the silicon carbide wafer 100 immersed in the etching solution is taken out and stands for a preset time T each time.
However, in the prior art, the main positioning edge of the silicon carbide wafer is parallel to the liquid level of the etching liquid, that is, the longitudinal edge of the die is perpendicular to the liquid level of the etching liquid, and the transverse edge is parallel to the liquid level of the etching liquid, and the vertical shaking of the silicon carbide wafer causes the difference of the etching rates of the longitudinal edge and the transverse edge of the die, which causes the etching residue of the die edge.
In the embodiment, as shown in fig. 2, since the main positioning edge 103 of the sic wafer 100 forms a first preset angle θ with the liquid level of the etching liquid, the edge 1011 in the transverse direction (the X direction is parallel to the main positioning edge 103) of the die 101 forms the first preset angle θ with the liquid level of the etching liquid, and the edge 1012 in the longitudinal direction (the Y direction is perpendicular to the main positioning edge 103) forms a second preset angle α with the liquid level of the etching liquid, that is, the transverse edge 1011 and the longitudinal edge 1012 are immersed in the etching liquid in a V-shaped manner, so that the etching difference of the die 101 in the longitudinal direction and the transverse direction is eliminated, the etching rates of the transverse edge 1011 and the longitudinal edge 1012 are the same, the etching uniformity of the edge of the die 101 is improved, and the etching residue of the edge of the die 101 is reduced. The first preset angle theta and the second preset angle alpha are complementary.
During the etching process, since the areas of the surface of the sic wafer 100 not to be etched are coated with the photoresist as a mask, the areas are not etched, and the areas not protected by the photoresist are etched to form the desired pattern.
The temperature of the etching solution is generally between 35 ℃ and 45 ℃, and the etching reaction is as follows:
2Al+6H3PO4→2Al(H2PO4)3+3H2↑
therefore, hydrogen bubbles are generated during etching, and if the hydrogen bubbles adhere to the surface of the electrode metal layer 102, the progress of etching of the electrode metal layer 102 is inhibited, resulting in non-uniform etching and etching residue. Although sulfuric acid can reduce interfacial tension, reducing this problem, there is a limit. And the isotropy etching performance of the wet etching is too strong, so that the transverse drilling corrosion phenomenon is easy to occur.
The preset frequency beta is 1 to 5 minutes per time, and the preset time period T is 1 to 20 seconds. That is, the time interval from the current operation of immersing the silicon carbide wafer 100 in the etching liquid to the next operation of immersing the silicon carbide wafer 100 in the etching liquid is 1 minute to 5 minutes, and the silicon carbide wafer 100 is left to stand for 1 second to 20 seconds each time after being taken out from the etching liquid, and then the next immersion operation is performed. And repeating the immersion and extraction actions according to the preset frequency beta until the etching is finished.
The method can eliminate the hydrogen bubbles generated in the etching process and attached to the surface of the electrode metal layer 102, avoid etching residues caused by the separation of the etching liquid and the electrode metal layer 102 by the hydrogen bubbles, and can weaken the transverse drilling corrosion phenomenon of wet etching.
It should be noted that the wet etching method in this embodiment is also applicable to other film etching processes requiring wet etching.
In summary, the embodiments of the present disclosure provide a wet etching method for an electrode metal layer of a silicon carbide device, in which a position of a silicon carbide wafer 100 is adjusted before etching, so that an electrode metal layer 102 to be etched on the silicon carbide wafer 100 is perpendicular to a liquid level of an etching solution, and a main positioning edge of the silicon carbide wafer 100 and the liquid level of the etching solution form a first preset angle θ, thereby eliminating etching differences between a longitudinal direction and a transverse direction of each die 101 during etching of the electrode metal layer 102, and improving etching uniformity of edges of the die 101. Immersing the silicon carbide wafer 100 into an etching solution according to a preset frequency beta to etch the electrode metal layer 102; the silicon carbide wafer 100 immersed in the etching solution is taken out and kept standing for a preset time T each time, so that hydrogen bubbles generated in the etching process of the electrode metal layer 102 and attached to the surface of the electrode metal layer 102 can be eliminated, and etching residues caused by the fact that the etching solution is separated from the electrode metal layer 102 by the hydrogen bubbles are avoided. The method is simple to operate and easy to realize, shortens the time of the electrode metal layer 102 etching process, improves the electrical performance and the yield of the silicon carbide-based power device, and saves the manufacturing cost.
The above is merely a preferred embodiment of the present disclosure and is not intended to limit the present disclosure, which may be variously modified and varied by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
Although the embodiments disclosed in the present disclosure are described above, the descriptions are only for the convenience of understanding the present disclosure, and are not intended to limit the present disclosure. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure, and that the scope of the disclosure is to be limited only by the appended claims.
Claims (8)
1. A wet etching method for an electrode metal layer of a silicon carbide device is characterized by comprising the following steps:
adjusting the position of a SiC wafer to be etched to enable an electrode metal layer to be etched on the SiC wafer to be vertical to the liquid level of etching liquid and enable a main positioning edge of the SiC wafer to form a first preset angle with the liquid level of the etching liquid; wherein the first preset angle is 40 to 50 °;
immersing the silicon carbide wafer into the etching liquid according to a preset frequency so as to etch the electrode metal layer; and taking out the silicon carbide wafer immersed in the etching liquid each time, and standing for a preset time.
2. The method for wet etching an electrode metal layer of a silicon carbide device according to claim 1, wherein the step of immersing the silicon carbide wafer into the etching solution at a predetermined frequency to etch the electrode metal layer comprises:
and immersing the silicon carbide wafer into the etching liquid according to a preset frequency and controlling the silicon carbide wafer to vertically shake in the etching liquid so as to accelerate the etching rate of the electrode metal layer.
3. The wet etching method for the electrode metal layer of the silicon carbide device according to claim 2, wherein a main positioning edge of the silicon carbide wafer forms a first preset angle with a liquid level of the etching liquid, so that a transverse edge of a tube core on the silicon carbide wafer forms the first preset angle with the liquid level of the etching liquid, and a longitudinal edge of the tube core forms a second preset angle with the liquid level of the etching liquid, so as to eliminate etching difference between the transverse edge and the longitudinal edge;
the transverse edge is an edge of the tube core parallel to the main positioning edge, the longitudinal edge is an edge of the tube core perpendicular to the main positioning edge, and the first preset angle and the second preset angle are complementary.
4. The method of claim 1, wherein the predetermined frequency is 1 to 5 minutes/time.
5. The wet etching method for the electrode metal layer of the silicon carbide device according to claim 1, wherein the predetermined period of time is 1 to 20 seconds to eliminate hydrogen bubbles generated during the etching process and attached to the surface of the electrode metal layer.
6. The method of claim 1, wherein the thickness of the electrode metal layer is greater than or equal to 1 um.
7. The wet etching method for the electrode metal layer of the silicon carbide device according to claim 1, wherein the electrode metal layer is made of an AlSi compound.
8. The method of claim 7, wherein the electrode metal layer contains less than 20% Si.
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| CN201911391962.3A CN113130304A (en) | 2019-12-30 | 2019-12-30 | Wet etching method for electrode metal layer of silicon carbide device |
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| CN201911391962.3A CN113130304A (en) | 2019-12-30 | 2019-12-30 | Wet etching method for electrode metal layer of silicon carbide device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113948388A (en) * | 2021-08-31 | 2022-01-18 | 福建毫米电子有限公司 | Wet etching method and distributed parameter circuit layout |
| CN114724948A (en) * | 2022-03-30 | 2022-07-08 | 青岛惠科微电子有限公司 | Wet etching method and device for silicon wafer |
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- 2019-12-30 CN CN201911391962.3A patent/CN113130304A/en active Pending
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