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CN113066893A - Double-sided PERC solar cell and preparation method thereof - Google Patents

Double-sided PERC solar cell and preparation method thereof Download PDF

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Publication number
CN113066893A
CN113066893A CN201911290591.XA CN201911290591A CN113066893A CN 113066893 A CN113066893 A CN 113066893A CN 201911290591 A CN201911290591 A CN 201911290591A CN 113066893 A CN113066893 A CN 113066893A
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silicon
film
silicon nitride
nitride film
layer
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马胜
童锐
张忠卫
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Nantong Sumin Energy Technology Co ltd
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Nantong Sumin Energy Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
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    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract

The invention discloses a double-sided PERC solar cell and a preparation method thereof, wherein the method comprises the steps of pretreating a silicon wafer; depositing a silicon oxide film, a silicon oxynitride film and a silicon nitride film with multiple layers of refractive indexes on the back surface of the silicon wafer in sequence; and carrying out post-treatment on the silicon wafer to finish the preparation of the double-sided PERC solar cell. The silicon oxide film and the silicon oxynitride film in the invention are both compact, have good chemical stability and strong impurity diffusion and water vapor permeation resistance, can effectively solve the back PID problem, and both the two films are good passivation films without affecting the electrical performance.

Description

Double-sided PERC solar cell and preparation method thereof
Technical Field
The invention belongs to the technical field of crystalline silicon solar cell preparation, and particularly relates to a double-sided PERC solar cell and a preparation method thereof.
Background
The pid (potential Induced degradation) effect, i.e. the high-voltage Induced attenuation effect, is an attenuation effect of solar modules under high-voltage conditions. The complete mechanism for the PID effect generated in photovoltaic systems remains to be studied, and is currently divided into three categories: 1. the components can form higher system voltage (600V-1000V) after being connected in series, and the components are longThe solar cell module works at high voltage, leakage current exists among cover plate glass, packaging materials and frames, a large amount of charges are accumulated on the surface of a cell, so that the passivation effect of the surface of the cell is deteriorated, the filling factor, short-circuit current and open-circuit voltage are reduced, the performance of the module is lower than the design standard, the phenomenon is a surface polarization effect, and the attenuation is reversible; 2. when the device is negatively biased, the leakage current anode ions (usually Na)+) The current flows into the battery piece, the parallel resistance of the battery is reduced, namely impurities appear in the semiconductor, and the impurities can form a conductive channel in the battery, so that the current output of the assembly is reduced; 3. the edge part of the photovoltaic module is easy to enter water vapor, the EVA can generate acetic acid after hydrolysis, the acetic acid reacts with Na in the glass, and a large amount of Na which can move freely can be generated+The silver-based electrolyte can react with silver grid lines on the surface of the battery piece, so that the grid lines of the battery are corroded, the series resistance is increased, the performance of the assembly is attenuated, and the attenuation can not be recovered.
Because the back of the double-sided PERC battery adopts a grid line design, the double sides have the PID problem, and the PID problem of the front side at present has a mature technical scheme in the industrialization process, for example, the front side of the battery is oxidized by ozone, thermal oxygen, nitric acid and the like to prepare a compact oxidation film layer, and meanwhile, the compact oxidation film layer is matched with a common EVA packaging film. The current mainstream film structure on the back comprises only an alumina film and a silicon nitride film, because Al2O3the/Si contact surface has a high fixed negative charge density, and Na is precipitated from the back glass in the dual-glass assembly+The electric charge in the alumina is redistributed, so that the passivation effect is deteriorated, an oxide layer exists on the front side, the anti-PID effect is achieved, the back side is not provided, the double-sided battery is packaged by adopting a POE material with higher compactness aiming at the assembly end, but the packaging process is complex because the POE material is expensive, the method does not have the cost advantage, and in addition, even if the POE material is used for packaging, the attenuation of the back side PID is still higher.
Disclosure of Invention
Aiming at the problems, the invention provides a double-sided PERC solar cell and a preparation method thereof, and the prepared double-sided PERC solar cell can reduce the front attenuation to 0.75% and the back attenuation to 0.74% under a certain condition (-1500V, 85 ℃ and 85% humidity 192 h).
In order to achieve the technical purpose and achieve the technical effects, the invention is realized by the following technical scheme:
in a first aspect, the present invention provides a method for preparing a double-sided PERC solar cell, comprising:
preprocessing a silicon wafer;
depositing a silicon oxide film, a silicon oxynitride film and a silicon nitride film with multiple layers of refractive indexes on the back surface of the silicon wafer in sequence;
and carrying out post-treatment on the silicon wafer to finish the preparation of the double-sided PERC solar cell.
Optionally, the multilayer refractive index silicon nitride film comprises, in order:
the film comprises a first layer of silicon nitride film, wherein the refractive index of the first layer of silicon nitride film is 2.46, and the thickness of the first layer of silicon nitride film is 35-55 nm;
the second layer of silicon nitride film has a refractive index of 2.35 and a thickness of 20-40 nm;
and the third layer of silicon nitride film has the refractive index of 2.05 and the thickness of 25-50 nm.
Optionally, the deposition method of the multilayer refractive index silicon nitride film comprises:
setting SiH4At a flow rate of 800sccm, NH3The flow rate of the silicon nitride film is 4800sccm, and a first silicon nitride film layer is formed;
setting SiH4At a flow rate of 800sccm, NH3The flow rate of (2) is 5600sccm, forming a second silicon nitride film;
setting SiH4Flow rate of (1) 1000sccm, NH3The flow rate of (2) is 8000sccm, and a third silicon nitride film is formed.
Optionally, the thickness of the silicon oxynitride film is 5-30 nm, and the deposition method comprises:
setting the gas flow ratio of NH3 to SiH4 to be 1.5-5; NH (NH)3And N2The gas flow rate of O is 1-3, and deposition is carried outAnd forming the silicon oxynitride film by adopting plasma enhanced chemical vapor deposition for 100-250 seconds.
Optionally, the thickness of the silicon oxide film is 3-10 nm, and the deposition method comprises:
setting SiH4The concentration is 200-800 sccm, N2The concentration of O is 2-4 slm, the temperature is 350-450 ℃, and in the ozone deposition process, O is generated2At a concentration of 15. + -. 5slm, N2Concentration 35. + -.10 slm, O3The concentration is 400 +/-50 ppm, and the silicon oxide film is formed by adopting a plasma enhanced chemical vapor deposition or ozone deposition mode.
Optionally, the pre-processing comprises:
texturing a silicon wafer to form a textured surface;
diffusing the front side of the silicon wafer to form a doping layer, wherein a PN junction exists in the doping layer;
polishing the back of the silicon wafer, and removing PN junctions at the edge of the silicon wafer;
oxidizing the front side of the silicon wafer;
the post-processing comprises:
depositing a silicon nitride film on the front surface of the silicon wafer;
performing laser grooving on the back of the silicon wafer;
printing an electrode;
and (5) sintering and testing.
In a second aspect, the present invention provides a bifacial PERC solar cell comprising:
a silicon wafer;
the front passivation film layer comprises a front silicon oxide film and a front silicon nitride film which are sequentially arranged, and the front silicon oxide film covers the front of the silicon wafer;
the back passivation film layer comprises a silicon oxide film, a silicon oxynitride film and a silicon nitride film with multiple layers of refractive indexes, wherein the silicon oxide film covers the back of the silicon wafer;
the silver grid line is arranged on the front passivation film layer;
and the aluminum grid line is arranged on the back passivation film layer.
Optionally, the silicon nitride film with multiple layers of refractive indexes comprises, in sequence:
the film comprises a first layer of silicon nitride film, wherein the refractive index of the first layer of silicon nitride film is 2.46, and the thickness of the first layer of silicon nitride film is 35-55 nm;
the second layer of silicon nitride film has a refractive index of 2.35 and a thickness of 20-40 nm;
and the third layer of silicon nitride film has the refractive index of 2.05 and the thickness of 25-50 nm.
Optionally, the thickness of the silicon oxynitride film is 5-30 nm, and the deposition method comprises:
setting the gas flow ratio of NH3 to SiH4 to be 1.5-5; NH (NH)3And N2And the gas flow ratio of O is 1-3, the deposition time is 100-250 seconds, and the silicon oxynitride film is formed by adopting plasma enhanced chemical vapor deposition.
Optionally, the thickness of the silicon oxide film is 3-10 nm, and the deposition method comprises:
setting SiH4The concentration is 200-800 sccm, N2The concentration of O is 2-4 slm, the temperature is 350-450 ℃, and in the ozone deposition process, O is generated2At a concentration of 15. + -. 5slm, N2Concentration 35. + -.10 slm, O3The concentration is 400 +/-50 ppm, and the silicon oxide film is formed by adopting a plasma enhanced chemical vapor deposition or ozone deposition mode.
Compared with the prior art, the invention has the beneficial effects that:
the silicon oxide/silicon oxynitride film is compact, has good chemical stability and strong impurity diffusion and water vapor permeation resistance, can effectively solve the PID problem, and has good passivation film layers without affecting the electrical property;
the back silicon nitride in the invention adopts a multi-film layer design, particularly the film thickness of the first layer is 35-55 nm, the refractive index is 2.46, the influence of PID can be effectively reduced by a compact film layer, and in addition, the optical loss can be effectively reduced by the design of gradual change of the refractive index.
By adopting the double-sided PERC solar cell, the POE process is not needed to be adopted at the assembly end to realize PID resistance, the cost can be reduced, and the process is simpler.
Drawings
In order that the present disclosure may be more readily and clearly understood, reference is now made to the following detailed description of the present disclosure taken in conjunction with the accompanying drawings, in which:
fig. 1 is a schematic structural diagram of a battery according to an embodiment of the present invention;
the silicon chip comprises a silicon chip 1, a front passivation film 2, a front silicon nitride film 11, a front silicon oxide film 12, a back passivation film 3, a silicon oxide film 22, a silicon oxynitride film 23, a silicon nitride film with a multi-layer refractive index 21, a silver grid line 4 and an aluminum grid line 5.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the scope of the invention.
The following detailed description of the principles of the invention is provided in connection with the accompanying drawings.
Example 1
The embodiment of the invention provides a preparation method of a double-sided PERC solar cell, which specifically comprises the following steps:
(1) pretreating the silicon wafer 1;
(2) depositing a silicon oxide film, a silicon oxynitride film and a silicon nitride film with multiple layers of refractive indexes on the back surface of the silicon wafer 1 in sequence;
(3) and carrying out post-treatment on the silicon wafer 1 to finish the preparation of the double-sided PERC solar cell.
In a specific implementation manner of the embodiment of the present invention, the total thickness of the multilayer silicon nitride thin film with refractive index is 80-110 nm, and the total thickness is three layers, and the deposition method of the multilayer silicon nitride thin film with refractive index includes:
setting SiH4At a flow rate of 800sccm, NH3With a flow rate of 4800sccm, a first layer of nitridation is formedA silicon thin film;
setting SiH4At a flow rate of 800sccm, NH3The flow rate of (2) is 5600sccm, forming a second silicon nitride film;
setting SiH4Flow rate of (1) 1000sccm, NH3The flow rate of (2) is 8000sccm, and a third silicon nitride film is formed.
The refractive index of the first layer of silicon nitride film is 2.46, and the thickness of the first layer of silicon nitride film is 45 nm; the refractive index of the second layer of silicon nitride film is 2.35, and the thickness is 25 nm; the refractive index of the third silicon nitride film is 2.05, and the thickness is 20 nm.
In a specific implementation manner of the embodiment of the present invention, the silicon oxynitride film and the silicon nitride film are both formed by plasma enhanced chemical vapor deposition.
The thickness of the silicon oxynitride film is 5-30 nm, and the deposition method comprises the following steps:
setting the gas flow ratio of NH3 to SiH4 to be 1.5-5; NH (NH)3And N2The gas flow proportion of O is 1-3, the silicon oxynitride film is formed, and the deposition time of the silicon oxynitride is 100-250 seconds;
specifically, NH is set3Gas flow rate of 600sccm, SiH4The gas flow rate of (1) is 2000sccm, N2And the gas flow of the O is 1500sccm, and the silicon oxynitride film is formed.
The thickness of the silicon oxide film is 3-10 nm, and the deposition method comprises the following steps:
setting SiH4The concentration is 200-800 sccm, N2The concentration of O is 2-4 slm, the temperature is 350-450 ℃, and in the ozone deposition process, O is generated2At a concentration of 15. + -. 5slm, N2Concentration 35. + -.10 slm, O3The concentration is 400 +/-50 ppm, the silicon oxide film is formed by adopting a plasma enhanced chemical vapor deposition or ozone deposition mode, and the deposition time of the silicon nitride is 450-700 seconds.
Preferably, the ratio of the thickness of the silicon nitride film to the thickness of the silicon oxynitride film is 3 to 6.
The pretreatment is the prior art, and specifically comprises the following steps:
texturing the silicon wafer 1 to form a textured surface;
diffusing the front side of the silicon wafer 1 to form a doping layer, wherein a PN junction exists in the doping layer;
polishing the back surface of the silicon wafer 1, and removing PN junctions at the edge of the silicon wafer 1;
oxidation is performed on the front surface of the silicon wafer 1.
The post-treatment is the prior art, and specifically comprises the following steps:
depositing a silicon nitride film on the front surface of the silicon wafer 1;
performing laser grooving on the back of the silicon wafer 1;
printing an electrode;
and (5) sintering and testing.
By adopting the method, the prepared double-sided battery has the front surface attenuated by 0.75% and the back surface attenuated by 0.74% under the specific test condition (-1500V, the temperature is 85 ℃, and the humidity is 85% for 192h), and the specific reference is made in table 1.
TABLE 1
Figure BDA0002316139710000051
Example 2
The invention provides a double-sided PERC solar cell which can be obtained by the preparation method of the double-sided PERC cell in the embodiment 1, and specifically, the double-sided PERC solar cell in the embodiment of the invention comprises the following components:
a silicon wafer 1;
the front passivation film layer 2 comprises a front silicon oxide film 11 and a front silicon nitride film 12 which are sequentially arranged, and the front silicon oxide film 12 covers the front of the silicon wafer 1;
a back passivation film layer 3 including a silicon oxide film 22, a silicon oxynitride film 23, and a silicon nitride film 21 having a plurality of refractive indexes sequentially disposed, the silicon oxide film 22 covering the back surface of the silicon wafer 1;
the silver grid line 4 is arranged on the front passivation film layer 2;
and the aluminum grid line 5 is arranged on the back passivation film layer 3.
In a specific implementation manner of the embodiment of the present invention, the silicon nitride film 21 with multiple layers of refractive indexes includes:
the film comprises a first layer of silicon nitride film, wherein the refractive index of the first layer of silicon nitride film is 2.46, and the thickness of the first layer of silicon nitride film is 35-55 nm;
the second layer of silicon nitride film has a refractive index of 2.35 and a thickness of 20-40 nm;
and the third layer of silicon nitride film has the refractive index of 2.05 and the thickness of 25-50 nm.
In a specific implementation manner of the embodiment of the present invention, the thickness of the silicon oxynitride film 23 is 5 to 30nm, and the deposition method includes:
setting the gas flow ratio of NH3 to SiH4 to be 1.5-5; NH (NH)3And N2And the gas flow proportion of O is 1-3, the deposition time is 100-250 seconds, and the silicon oxynitride film 23 is formed by adopting plasma enhanced chemical vapor deposition.
In a specific implementation manner of the embodiment of the present invention, the thickness of the silicon oxide film 22 is 3 to 10nm, and the deposition method includes:
setting SiH4The concentration is 200-800 sccm, N2The concentration of O is 2-4 slm, the temperature is 350-450 ℃, and in the ozone deposition process, O is generated2At a concentration of 15. + -. 5slm, N2Concentration 35. + -.10 slm, O3The silicon oxide film 22 is formed by plasma enhanced chemical vapor deposition or ozone deposition with the concentration of 400 +/-50 ppm.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (10)

1. A preparation method of a double-sided PERC solar cell is characterized by comprising the following steps:
preprocessing a silicon wafer;
depositing a silicon oxide film, a silicon oxynitride film and a silicon nitride film with multiple layers of refractive indexes on the back surface of the silicon wafer in sequence;
and carrying out post-treatment on the silicon wafer to finish the preparation of the double-sided PERC solar cell.
2. The method of claim 1, wherein the multilayer refractive index silicon nitride film comprises, in order:
the film comprises a first layer of silicon nitride film, wherein the refractive index of the first layer of silicon nitride film is 2.46, and the thickness of the first layer of silicon nitride film is 35-55 nm;
the second layer of silicon nitride film has a refractive index of 2.35 and a thickness of 20-40 nm;
and the third layer of silicon nitride film has the refractive index of 2.05 and the thickness of 25-50 nm.
3. The method of claim 2, wherein the depositing the multilayer refractive index silicon nitride film comprises:
setting SiH4At a flow rate of 800sccm, NH3The flow rate of the silicon nitride film is 4800sccm, and a first silicon nitride film layer is formed;
setting SiH4At a flow rate of 800sccm, NH3The flow rate of (2) is 5600sccm, forming a second silicon nitride film;
setting SiH4Flow rate of (1) 1000sccm, NH3The flow rate of (2) is 8000sccm, and a third silicon nitride film is formed.
4. The method of claim 1, wherein the silicon oxynitride film has a thickness of 5-30 nm, and the deposition method comprises:
setting the gas flow ratio of NH3 to SiH4 to be 1.5-5; NH (NH)3And N2And the gas flow ratio of O is 1-3, the deposition time is 100-250 seconds, and the silicon oxynitride film is formed by adopting plasma enhanced chemical vapor deposition.
5. The method of claim 1, wherein the silicon oxide film has a thickness of 3-10 nm, and the deposition method comprises:
setting SiH4The concentration is 200-800 sccm, N2The concentration of O is 2-4 slm, the temperature is 350-450 ℃, and in the ozone deposition process, O is generated2At a concentration of 15. + -. 5slm, N2Concentration 35. + -.10 slm, O3The concentration is 400 +/-50 ppm, and the silicon oxide film is formed by adopting a plasma enhanced chemical vapor deposition or ozone deposition mode.
6. The method of claim 1, wherein the pre-treating comprises:
texturing a silicon wafer to form a textured surface;
diffusing the front side of the silicon wafer to form a doping layer, wherein a PN junction exists in the doping layer;
polishing the back of the silicon wafer, and removing PN junctions at the edge of the silicon wafer;
oxidizing the front side of the silicon wafer;
the post-processing comprises:
depositing a silicon nitride film on the front surface of the silicon wafer;
performing laser grooving on the back of the silicon wafer;
printing an electrode;
and (5) sintering and testing.
7. A bifacial PERC solar cell, comprising:
a silicon wafer;
the front passivation film layer comprises a front silicon oxide film and a front silicon nitride film which are sequentially arranged, and the front silicon oxide film covers the front of the silicon wafer;
the back passivation film layer comprises a silicon oxide film, a silicon oxynitride film and a silicon nitride film with multiple layers of refractive indexes, wherein the silicon oxide film covers the back of the silicon wafer;
the silver grid line is arranged on the front passivation film layer;
and the aluminum grid line is arranged on the back passivation film layer.
8. The bifacial PERC solar cell of claim 7, wherein: the silicon nitride film with the multilayer refractive index comprises the following components in sequence:
the film comprises a first layer of silicon nitride film, wherein the refractive index of the first layer of silicon nitride film is 2.46, and the thickness of the first layer of silicon nitride film is 35-55 nm;
the second layer of silicon nitride film has a refractive index of 2.35 and a thickness of 20-40 nm;
and the third layer of silicon nitride film has the refractive index of 2.05 and the thickness of 25-50 nm.
9. The bifacial PERC solar cell of claim 7, wherein: the thickness of the silicon oxynitride film is 5-30 nm, and the deposition method comprises the following steps:
setting the gas flow ratio of NH3 to SiH4 to be 1.5-5; NH (NH)3And N2And the gas flow ratio of O is 1-3, the deposition time is 100-250 seconds, and the silicon oxynitride film is formed by adopting plasma enhanced chemical vapor deposition.
10. The bifacial PERC solar cell of claim 7, wherein: the thickness of the silicon oxide film is 3-10 nm, and the deposition method comprises the following steps:
setting SiH4The concentration is 200-800 sccm, N2The concentration of O is 2-4 slm, the temperature is 350-450 ℃, and in the ozone deposition process, O is generated2At a concentration of 15. + -. 5slm, N2Concentration 35. + -.10 slm, O3The concentration is 400 +/-50 ppm, and the silicon oxide film is formed by adopting a plasma enhanced chemical vapor deposition or ozone deposition mode.
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Application publication date: 20210702