CN113046700A - Semi-shielding device for end face coating of strip-shaped semiconductor laser and coating method - Google Patents
Semi-shielding device for end face coating of strip-shaped semiconductor laser and coating method Download PDFInfo
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- CN113046700A CN113046700A CN201911366659.8A CN201911366659A CN113046700A CN 113046700 A CN113046700 A CN 113046700A CN 201911366659 A CN201911366659 A CN 201911366659A CN 113046700 A CN113046700 A CN 113046700A
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- coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- Engineering & Computer Science (AREA)
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a semi-shielding device for end face coating of a bar-shaped semiconductor laser and a coating method, and the semi-shielding device comprises a workpiece disc, a shielding plate, a correction plate, a coating source and a coating machine, wherein the coating machine is internally provided with a cavity structure, the coating source is arranged at the bottom of the inner side of the cavity structure, the workpiece disc is arranged at the upper part of the cavity structure, the workpiece disc is connected with an upper bracket of the coating machine through a rotating shaft, the shielding plate is arranged at the lower side of the workpiece disc, the shielding plate is fixed to two sides of the cavity through a support frame, the correction plate is arranged at the lower side of the shielding plate and is connected with the inner side of the cavity. The invention has good coating uniformity, can improve the quality of the strip-shaped semiconductor laser chip and improve the yield. The problems of poor product quality and influence on the performance of the strip-shaped semiconductor laser caused by poor evaporation uniformity in the prior art are solved.
Description
Technical Field
The invention relates to the technical field of semiconductor laser chip manufacturing, in particular to a semi-shielding device for coating a film on an end face of a strip-shaped semiconductor laser and a film coating method.
Background
The bar-shaped semiconductor Laser (LD) has the advantages of small volume, light weight, high conversion efficiency, long service life and the like, is widely applied to the fields of solid laser pumping, industrial processing, laser medical treatment, military and the like, and has very wide application prospect and market value.
In the process of producing a strip-shaped semiconductor laser chip, end face coating aiming at a laser bar is one of very important process steps. The end face coating of the bar-shaped semiconductor laser mainly has two purposes: 1. the protection of the cavity surface is realized, the end surface of the laser is prevented from being polluted by water vapor, oil stain, dust and the like in the atmospheric environment, and the crystal dangling bond generated by dissociation is prevented from reacting with oxidizing gas, and the performance and the service life of the laser are reduced by the reaction; 2. the reflectivity of two end faces of the strip laser is reasonably adjusted, the threshold current and the emitting efficiency of the laser are optimized, and the maximum laser power output of a single face is finally realized.
Chinese patent CN 101748367 discloses a device and a method for coating a film on a cavity surface of a semiconductor laser, wherein the device is composed of three wafer bearing tables fixed on an evaporation platform at an inclined angle, when in use, the laser with the cavity surface cleaved is firstly placed on the wafer bearing tables, and the cavity surface is close to the edge of the wafer bearing tables; then fixing the laser by using the spring piece, wherein the upper surface of the laser is protected by the spring piece; and finally, mounting the wafer bearing platform on an evaporation platform, and putting the mounted evaporation platform into an evaporation cavity for evaporation. In the evaporation process, the upper surface of the laser is covered by the spring piece, the lower surface of the laser is tightly attached to the bearing table, and the cavity surface of the laser and the evaporation plane form a certain inclination angle, so that the upper surface and the lower surface of the laser are protected and cannot be coated by an evaporation film, and the possibility of introducing a metal short circuit or coating a metal electrode by an insulating film during evaporation is effectively avoided. However, the technique of this patent has problems and disadvantages in that: only the use of a spring piece for fixing the chip is described, no specific clamping structure is described, and the inclined structure thereof causes a certain angle between the end face of the strip-shaped semiconductor laser to be evaporated and an evaporation source, so that the evaporation uniformity is greatly influenced.
Chinese patent CN 2741238 discloses a fixture for semiconductor laser cavity surface coating, belonging to the technical field of semiconductor laser process. The technical problem that this patent technique was solved is: the existing clamp has a complex structure and is difficult to process, the surface of the cavity is easily polluted or damaged due to extremely troublesome strip installation, and the clamped thin plate is also easily subjected to mechanical damage to the laser strip. The fixture for coating the cavity surface of the semiconductor laser provided by the patent technology consists of three parallel concave plates (5), a rectangular thin plate (8) and a square frame for fixing and clamping. The technique of this patent suffers from problems and disadvantages in that: the concave plate and the square plate are combined and fixed, but the requirement on the size of the chip is single, and if the size is not suitable, the flat fixed coating is difficult to realize; and the fixture can be polluted during film coating, the cavity surface can be damaged necessarily, and the performance of the strip-shaped semiconductor laser is influenced.
Chinese patent CN103225068A discloses a clamping fixture for end face coating of semiconductor laser chip, the device includes: the mounting, the both ends of mounting are fixed with two connecting axles respectively, the mounting has the extension through two connecting axle swing joint, be connected with the spring between extension and the mounting. Still include supplementary dress strip instrument, supplementary dress strip instrument includes the base, the pedestal connection has the handle seat, be provided with the lead screw on the handle seat, the base surface is provided with left guide rail and right guide rail, is connected with the pull rod between left guide rail and the right guide rail, the pull rod with screw connection. The technique of this patent suffers from problems and disadvantages in that: this patent has the problem that the anchor clamps expansion end easily receives the coating film material to influence and leads to the mobility to worsen, can't be according to the corresponding holder thickness of bar width adjustment to and the anchor clamps expansion end easily receives the influence of centre gripping anchor clamps in the coating film and causes to the bar clamping-force not enough, lead to the problem that the bar drops.
At present, in the LD semiconductor laser chip manufacturing process industry, coating equipment plays a key role, but the coating equipment has the problems that the coating source is not concentric with the center of a workpiece disc for coating, the divergent angle of the coating source is asymmetric during coating, the end surface coating thickness is inconsistent, the thickness uniformity is poor, the coating effect is not ideal, the finally formed strip-shaped semiconductor laser chip has poor quality and low qualification rate, and the like.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a semi-shielding device for coating the end face of a strip-shaped semiconductor laser; the invention has good coating uniformity, can improve the quality of the strip-shaped semiconductor laser chip and improve the yield. The problems of poor product quality and influence on the performance of the strip-shaped semiconductor laser caused by poor evaporation uniformity in the prior art are solved.
The invention also provides a method for coating the end face of the strip-shaped semiconductor laser.
The technical scheme adopted by the invention for overcoming the technical problems is as follows:
the utility model provides a half device that shelters from of bar semiconductor laser terminal surface coating film, including the work piece dish, the shielding plate, the correction board, the coating film source, the coating machine, the inside cavity structures that is of coating machine, the inboard bottom of cavity structures is located to the coating film source, the upper portion of cavity structures is located to the work piece dish, the work piece dish is through pivot and coating machine upper portion leg joint, the work piece dish downside is located to the shielding plate, the shielding plate passes through the support frame and fixes the both sides to the cavity, the shielding plate downside is located to the correction board and is connected with the cavity inboard, the part that the work piece dish exposes after sheltering from through the shielding plate.
The shielding plate keeps a close distance with the workpiece disc above.
A semi-shielding coating method for coating on the end face of a strip-shaped semiconductor laser comprises the following steps:
a) partially shielding a workpiece disc for coating the end face of the strip-shaped semiconductor laser through a shielding plate;
b) adjusting the end face coating area of the bar-shaped semiconductor laser to enable the original center line to move rightwards to coincide with the center line of the coating source, so that the coating source and the end face coating area of the bar-shaped semiconductor laser form a complete conical surface during coating;
c) after the correction is carried out by the coating correction plate, the end face of the bar-shaped semiconductor laser on the workpiece disc is uniformly coated, and the thicknesses of products on an inner ring, a middle ring and an outer ring of the end face of the bar-shaped semiconductor laser are kept consistent;
d) the end face coating area of the bar-shaped semiconductor laser is adjusted through the baffle plate, so that the original central line of the workpiece disc is moved right to coincide with the central line of the coating source, the angle from the coating source to the left corner of the workpiece disc is reduced from large to small, and the coating consistency from the coating source to the coating area and the coating compactness are obviously improved.
The end face coating area of the strip-shaped semiconductor laser is an area calculated by geometric drawing in the cavity, and the center line of the end face coating area of the strip-shaped semiconductor laser is superposed with the center line of the coating source.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention solves the problem of uneven film coating of the film coating machine with the film coating source not concentric with the center of the workpiece disc, can greatly improve the product quality, greatly improve the yield, reduce the production cost and obviously improve the economic benefit. The problem of among the prior art because adopt the bar semiconductor laser terminal surface that the slope structure needs the coating by vaporization and evaporation source have the poor product quality that leads to the fact of the poor coating by vaporization homogeneity that certain angle exists and influence bar semiconductor laser performance is solved.
2. The uniformity of the strip-shaped semiconductor end face coating film is obviously improved, the thickness consistency of the inner ring, the middle ring and the outer ring of the strip-shaped semiconductor end face coating film is improved, and the stability of the central wavelength is obviously improved.
3. The strip-shaped semiconductor laser chip formed by the invention has the advantages that the stability of each parameter, power, current and voltage is obviously improved, the reliability and the service life of the product are improved, the use and maintenance cost is reduced, and the economic benefit is improved.
4. The effective evaporation distance of the invention is shortened, so that the compactness of the coating film on the end surface of the strip-shaped semiconductor is obviously improved, and the capability of the product adapting to various environments is obviously improved.
Drawings
Fig. 1 is a schematic structural diagram of an end face coating device of a strip-shaped semiconductor laser according to the present invention.
In the figure, 1 workpiece disc, 2 baffle plate, 3 coating area, 4 correction plate, 5 coating source, 6 coating machine cavity structure, 7 rotating shaft, 8 coating source central line, 9 workpiece disc original central line, 10 support.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not all embodiments.
As shown in fig. 1, a half-shielding device for end face coating of a bar-shaped semiconductor laser comprises a workpiece disc 1, a shielding plate 2, a correction plate 4, a coating source 5 and a coating machine 6, wherein the coating machine 6 is internally of a cavity structure, the coating source 5 is arranged at the bottom of the inner side of the cavity structure, the workpiece disc 1 is arranged at the upper part of the cavity structure, the workpiece disc 1 is connected with a bracket 10 at the upper part of the coating machine 6 through a rotating shaft 7, the shielding plate 2 is arranged at the lower side of the workpiece disc 1, the shielding plate 2 is fixed to two sides of the cavity through a supporting frame, the correction plate 4 is arranged at the lower side of the shielding plate 2 and is connected with the inner side of the cavity, the exposed part of the workpiece disc 1 after being shielded by the shielding plate 2 below is a coating area 3, and the coating area 3 in the figure is the maximum. The specific shape of the correction plate 4 varies depending on the film system.
In order to obtain a good effect and meet different coating requirements, the shielding plate 2 keeps a close distance from the workpiece disc 1 above, and the closer the shielding plate 2 is to the workpiece disc 1, the better the evaporation effect is ensured.
A semi-shielding coating method for coating on the end face of a strip-shaped semiconductor laser comprises the following steps:
a) the method comprises the following steps that a workpiece disc 1 for end face film coating of a strip-shaped semiconductor laser is partially shielded through a shielding plate 2;
b) adjusting the strip-shaped semiconductor laser end surface coating area 3 to enable the original center line to move rightwards to coincide with the coating source center line 8, and enabling the coating source 5 and the strip-shaped semiconductor laser end surface coating area 3 to form a complete conical surface during coating;
c) after the workpiece disc 1 is corrected by the coating correction plate 4, the end face of the bar-shaped semiconductor laser is uniformly coated, and the thicknesses of products on the inner ring, the middle ring and the outer ring of the end face of the bar-shaped semiconductor laser are kept consistent;
d) the shielding plate 2 is used for adjusting the strip-shaped semiconductor laser end face coating area 3, so that the original central line 9 of the workpiece disc is moved right to coincide with the central line 8 of the coating source, the angle from the coating source 5 to the left side of the workpiece disc 1 is changed from a large angle a to a small angle b, and the coating consistency and the coating compactness from the coating source 5 to the coating area 3 are obviously improved.
The coating area 3 is an area calculated by geometrically drawing in the cavity, so that the center line of the coating area 3 on the end face of the strip-shaped semiconductor laser coincides with the center line of the coating source 5, and the coating uniformity is ensured.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present patent, and these modifications and substitutions should also be regarded as the protection scope of the present patent.
Claims (4)
1. The utility model provides a half device that shelters from of bar semiconductor laser terminal surface coating film, which is characterized by, including work piece dish 1, the shielding plate, the correction plate, the coating film source, the coating machine, the inside cavity structures that is of coating machine, the inboard bottom of cavity structures is located to the coating film source, cavity structures's upper portion is located to the work piece dish, the work piece dish is through pivot and coating machine upper portion leg joint, the work piece dish downside is located to the shielding plate, the shielding plate passes through the both sides that the support frame is fixed to the cavity, the shielding plate downside is located to the correction plate and is connected with the cavity inboard, the part that the work piece dish exposes after sheltering from through.
2. The device as claimed in claim 1, wherein the shielding plate is kept at a close distance from the upper workpiece disk.
3. A semi-shielding film coating method for coating a strip-shaped semiconductor laser end face is characterized by comprising the following steps:
a) partially shielding a workpiece disc for coating the end face of the strip-shaped semiconductor laser through a shielding plate;
b) adjusting the end face coating area of the bar-shaped semiconductor laser to enable the original center line to move rightwards to coincide with the center line of the coating source, so that the coating source and the end face coating area of the bar-shaped semiconductor laser form a complete conical surface during coating;
c) after the correction is carried out by the coating correction plate, the end face of the bar-shaped semiconductor laser on the workpiece disc is uniformly coated, and the thicknesses of products on an inner ring, a middle ring and an outer ring of the end face of the bar-shaped semiconductor laser are kept consistent;
d) the end face coating area of the bar-shaped semiconductor laser is adjusted through the baffle plate, so that the original central line of the workpiece disc is moved right to coincide with the central line of the coating source, the angle from the coating source to the left corner of the workpiece disc is reduced from large to small, and the coating consistency from the coating source to the coating area and the coating compactness are obviously improved.
4. The method as claimed in claim 3, wherein the bar-shaped semiconductor laser end face coating area is an area calculated by geometric mapping inside the cavity, and the center line of the bar-shaped semiconductor laser end face coating area coincides with the center line of the coating source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911366659.8A CN113046700A (en) | 2019-12-26 | 2019-12-26 | Semi-shielding device for end face coating of strip-shaped semiconductor laser and coating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911366659.8A CN113046700A (en) | 2019-12-26 | 2019-12-26 | Semi-shielding device for end face coating of strip-shaped semiconductor laser and coating method |
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| CN113046700A true CN113046700A (en) | 2021-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911366659.8A Pending CN113046700A (en) | 2019-12-26 | 2019-12-26 | Semi-shielding device for end face coating of strip-shaped semiconductor laser and coating method |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5579869A (en) * | 1978-12-06 | 1980-06-16 | Matsushita Electric Ind Co Ltd | Vacuum deposition apparatus |
| US5622567A (en) * | 1992-11-30 | 1997-04-22 | Mitsubishi Denki Kabushiki Kaisha | Thin film forming apparatus using laser |
| CN104004995A (en) * | 2014-06-05 | 2014-08-27 | 上海和辉光电有限公司 | Vapor plating device, vapor plating equipment and vapor plating method |
| US20140262754A1 (en) * | 2013-03-15 | 2014-09-18 | Semicat, Inc. | Physical vapor deposition methods and systems to form semiconductor films using counterbalance magnetic field generators |
| CN206289298U (en) * | 2016-12-27 | 2017-06-30 | 光驰科技(上海)有限公司 | A kind of radome for realizing ion gun uniform irradiation film plating substrate |
| CN206940976U (en) * | 2017-06-19 | 2018-01-30 | 南阳凯鑫光电股份有限公司 | Coating machine and coating apparatus |
-
2019
- 2019-12-26 CN CN201911366659.8A patent/CN113046700A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5579869A (en) * | 1978-12-06 | 1980-06-16 | Matsushita Electric Ind Co Ltd | Vacuum deposition apparatus |
| US5622567A (en) * | 1992-11-30 | 1997-04-22 | Mitsubishi Denki Kabushiki Kaisha | Thin film forming apparatus using laser |
| US20140262754A1 (en) * | 2013-03-15 | 2014-09-18 | Semicat, Inc. | Physical vapor deposition methods and systems to form semiconductor films using counterbalance magnetic field generators |
| CN104004995A (en) * | 2014-06-05 | 2014-08-27 | 上海和辉光电有限公司 | Vapor plating device, vapor plating equipment and vapor plating method |
| CN206289298U (en) * | 2016-12-27 | 2017-06-30 | 光驰科技(上海)有限公司 | A kind of radome for realizing ion gun uniform irradiation film plating substrate |
| CN206940976U (en) * | 2017-06-19 | 2018-01-30 | 南阳凯鑫光电股份有限公司 | Coating machine and coating apparatus |
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Application publication date: 20210629 |
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