CN113035725B - Deep cavity bonding method - Google Patents
Deep cavity bonding method Download PDFInfo
- Publication number
- CN113035725B CN113035725B CN202110215120.3A CN202110215120A CN113035725B CN 113035725 B CN113035725 B CN 113035725B CN 202110215120 A CN202110215120 A CN 202110215120A CN 113035725 B CN113035725 B CN 113035725B
- Authority
- CN
- China
- Prior art keywords
- bonding
- chopper
- tool
- wire
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 229920001875 Ebonite Polymers 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 8
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005299 abrasion Methods 0.000 claims description 3
- 230000004323 axial length Effects 0.000 claims description 3
- 238000011109 contamination Methods 0.000 claims description 3
- 210000001503 joint Anatomy 0.000 claims description 3
- 238000005728 strengthening Methods 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 8
- 238000004377 microelectronic Methods 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 235000014820 Galium aparine Nutrition 0.000 description 1
- 240000005702 Galium aparine Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
- H01L2224/78314—Shape
- H01L2224/78315—Shape of the pressing surface, e.g. tip or head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
The invention relates to a deep cavity bonding method, which belongs to the technical field of microelectronic packaging; step one, manufacturing a bonding tool; step two, manufacturing a fixed clamp; thirdly, carrying out plasma cleaning on the surface of the device to be bonded; fourthly, horizontally placing the device to be bonded on a device fixing plate, and vacuumizing to fix the device to be bonded; setting bonding pressure, bonding power and bonding time, and bonding; the invention also develops a bonding method suitable for the deep cavity bonding tool, solves the problem of bonding reliability of the deep cavity power device, is suitable for deep cavity bonding application scenes, and greatly widens the packaging capability of the deep cavity power device.
Description
Technical Field
The invention belongs to the technical field of microelectronic packaging, and relates to a deep cavity bonding method.
Background
The power semiconductor device is also called a power electronic device, and is a core device for realizing electric energy conversion and circuit control of the power electronic device. The main application comprises frequency conversion, rectification, transformation, power amplification, power control and the like, and has the energy-saving effect. The power semiconductor device is widely applied to the power and electronic fields such as mobile communication, consumer electronics, energy source traffic, rail traffic, industrial control, power generation and distribution, and the like, and covers low, medium and high power levels.
With the continuous improvement of the electrical performance of devices, higher requirements are put on the electrical connection inside the devices. Electrical connections between chips and housings within such semiconductor devices are currently made primarily through aluminum wire wedge bonding. However, as the device structure becomes more complex, the cavity depth increases. Therefore, the inner lead of the power semiconductor device is too close to the inner wall of the cavity, and the bonding space is small, so that the lead bonding cannot be performed.
Disclosure of Invention
The invention solves the technical problems that: the method for bonding the deep cavity is provided, meanwhile, the bonding method applicable to the deep cavity bonding tool is developed, the problem of bonding reliability of the deep cavity power device is solved, the method is applicable to deep cavity bonding application scenes, and the packaging capability of the deep cavity power device is greatly widened.
The solution of the invention is as follows:
a deep cavity bonding method comprising the steps of:
step one, manufacturing a bonding tool, wherein the bonding tool comprises a wedge-shaped tool, a shredding tool and a lead wire guide pipe;
step two, manufacturing a fixing clamp, wherein the fixing clamp comprises a device fixing plate, a hard rubber sealing gasket, a vacuum pipeline joint, a powerful magnet and a fixing seat;
thirdly, carrying out plasma cleaning on the surfaces of the devices to be bonded to remove contamination on the surfaces of the chips and the shell;
fourthly, horizontally placing the device to be bonded on a device fixing plate, opening a vacuum pipeline joint, and vacuumizing through an external vacuumizing device to fix the device to be bonded;
and fifthly, setting bonding pressure, bonding power and bonding time according to the diameter of the output lead of the lead guide pipe, and bonding.
In the above deep cavity bonding method, in the first step, the bonding tool specifically includes:
the wedge-shaped tool is vertically arranged; the lead guide pipe is correspondingly arranged at the front cutter surface of the chopper of the wedge-shaped tool; the shredding tool is arranged between the wedge-shaped tool and the lead wire guide pipe; the wire conveyed by the wire guide pipe is bonded on the upper surface of the device to be bonded by a wedge tool, and after bonding is finished, the wire is cut off by a shredding tool.
In the above deep cavity bonding method, the vertical axial length L1 of the wedge tool is 3 inches; the wedge-shaped tool is made of tungsten carbide, and the abrasion life of the wedge-shaped tool exceeds 50 ten thousand bonding points; the bottom end of the wedge-shaped tool is provided with a chopper; the chopper adopts a vapor deposition method to carry out titanium dioxide strengthening treatment, and the wear resistance of the chopper is improved.
In the deep cavity bonding method, the chamfer angle a of the chopper is 30 degrees when seen from the lead wire direction; seen from the side, the included angle b between the front cutter surface of the riving knife and the vertical direction is 5 degrees, and the included angle c between the rear cutter surface of the riving knife and the vertical direction is 5 degrees.
In the deep cavity bonding method, the bottom end of the riving knife is provided with the inverted V-shaped groove when seen from the lead direction; the slotting angle d of the inverted V-shaped groove is 70 degrees; setting the width of the inverted V-shaped groove to be L2; the depth of the inverted V-shaped groove is L3; the width of the chopper is L4 when seen from the direction of the lead; when the wire diameter is 250 μm, L2 is 310 μm, L4 is 485 μm, and L3 is 191 μm; when the wire diameter is 380 μm, L2 is 465 μm, L4 is 737 μm, and L3 is 287 μm; when the wire diameter was 500. Mu.m, L2 was 622. Mu.m, L4 was 965. Mu.m, and L3 was 378. Mu.m.
In the above deep cavity bonding method, the front edge and the rear edge of the riving knife are both in a rounded structure when seen from the side; when the diameter of the lead is 250 mu m, the bonding point length L5 of the chopper is 720 mu m, the radius r2 of the rear edge is 203 mu m, and the radius r1 of the front edge is 254 mu m; when the diameter of the lead is 380 mu m, the bonding point length L5 of the chopper is 1080 mu m, the radius r2 of the trailing edge is 305 mu m, and the radius r1 of the leading edge is 381 mu m; when the wire diameter is 500 μm, the bond point length L5 of the chopper is 1440 μm, the trailing edge radius r2 is 406 μm, and the leading edge radius r1 is 508 μm.
In the above deep cavity bonding method, in the second step, the fixing fixture specifically includes:
the fixed seat is horizontally arranged; the powerful magnet is embedded and arranged at the center of the bottom of the fixed seat, so that the fixed seat is fixed; the device fixing plate is horizontally arranged at the top of the fixing seat; a groove is arranged in the center of the upper surface of the device fixing plate; the device to be bonded is horizontally placed in the groove of the device fixing plate; a vacuum pipeline is arranged in the fixing seat, and one end of the vacuum pipeline is communicated with the groove of the device fixing plate; the other end of the vacuum pipeline is communicated with the side wall of the fixed seat, and a vacuum pipeline connector is arranged at the end and is connected with an external vacuumizing device; the hard rubber sealing gasket is of an annular structure; the hard rubber sealing gasket is arranged at the butt joint surface of the device fixing plate and the fixing seat, so that the vacuum degree between the device fixing plate and the fixing seat is ensured.
In the above deep cavity bonding method, in the third step, during plasma cleaning, the cleaning power is greater than 300W; the cleaning medium is Ar gas with the concentration of 70 sccm; the cleaning time was 200s.
The deep cavity bonding method is characterized by comprising the following steps of: in the fifth step, when the diameter of the wire is 250 μm, the bonding pressure is 300g; the bonding power is 8.5W; the bonding time is 80ms; when the wire diameter is 380 μm, the bonding pressure is 400g; the bonding power is 11.3W; the bonding time is 100ms; when the wire diameter is 500 μm, the bonding pressure is 800g; the bonding power is 12.7W; the bonding time was 120ms.
Compared with the prior art, the invention has the beneficial effects that:
(1) The total length of the wedge-shaped tool designed by the invention is 3 inches, and the chamfer angle a of the chopper is 30 degrees; seen from the side, the included angle b between the front cutter surface and the vertical direction of the riving knife is 5 degrees, and the included angle c between the rear cutter surface and the vertical direction is 5 degrees, so that the maximum bondable depth reaches 1.6 inches;
(2) According to the invention, the structure size of the chopper of the wedge-shaped tool is determined according to different lead diameters, and the slotting angle, the slotting width and the slotting depth of the inverted V-shaped groove are designed; the bonding wire is uniformly and stably deformed by designing the top end structure of the wedge-shaped tool;
(3) The invention determines the structural size according to different wire diameters, develops a bonding method suitable for a deep cavity bonding tool, solves the problem of bonding reliability of the deep cavity power device, is suitable for deep cavity bonding application scenes, and greatly widens the packaging capability of the deep cavity power device.
Drawings
FIG. 1 is a bonding flow chart of the present invention;
FIG. 2 is a schematic view of the mating of the bonding tool and the fixture of the present invention;
FIG. 3 is a front and side view of the riving knife of the present invention;
FIG. 4 is an enlarged view of portion A of FIG. 3 in accordance with the present invention;
FIG. 5 is an enlarged view of portion B of FIG. 3 in accordance with the present invention;
FIG. 6 is a schematic diagram of a first point bonding process for bonding a riving knife;
FIG. 7 is a schematic diagram of a process of drawing a wire by a riving knife;
FIG. 8 is a schematic diagram of a second point bonding process performed by the riving knife.
Detailed Description
The invention is further illustrated below with reference to examples.
The invention provides a deep cavity bonding method, designs a bonding tool which can adapt to a deep cavity and a small-space power device shell, develops a process method suitable for deep cavity bonding, ensures smooth implementation of deep cavity structure power device aluminum wire bonding, solves the problem of deep cavity power device bonding reliability, is suitable for deep cavity bonding application scenes, and greatly widens the packaging capacity of the deep cavity power device.
The deep cavity bonding method, as shown in fig. 1, specifically comprises the following steps:
step one, manufacturing a bonding tool 1, as shown in fig. 2, comprising a wedge tool 11, a shredding tool 12 and a wire guide tube 13; the wedge tool 11 is placed vertically; the lead guide pipe 13 is correspondingly arranged at the front cutter surface position of the riving knife of the wedge-shaped tool 11; the shredding tool 12 is arranged between the wedge tool 11 and the wire guide tube 13; the wire fed by the wire guide 13 is bonded to the upper surface of the device to be bonded by the wedge tool 11, and after the bonding is completed, the wire is cut by the wire cutting tool 12. Bonding wire on the device, wire feeding, wire breaking and other steps are realized through the cooperation of the wedge-shaped tool 11, the wire cutting tool 12 and the wire guide pipe 13
Wherein the wedge tool 11 has a vertical axial length L1 of 3 inches; the wedge-shaped tool 11 is made of tungsten carbide, and the abrasion life exceeds 50 ten thousand bonding points; the bottom end of the wedge-shaped tool 11 is provided with a riving knife 111; the chopper 111 adopts a vapor deposition method to carry out titanium dioxide strengthening treatment, so that the wear resistance of the chopper 111 is improved, and the service life of the chopper 111 is prolonged.
As shown in fig. 3, the chamfer a of the riving knife 111 is 30 ° as viewed from the lead direction; the rake face of the riving knife 111 has an angle b of 5 ° with the vertical direction and the relief face has an angle c of 5 ° with the vertical direction when viewed from the side.
As shown in fig. 4, the bottom end of the riving knife 111 is provided with an inverted V-shaped groove as viewed from the lead direction; the slotting angle d of the inverted V-shaped groove is 70 degrees; setting the width of the inverted V-shaped groove to be L2; the depth of the inverted V-shaped groove is L3; the width of the riving knife 111 as seen in the lead direction is L4; when the wire diameter is 250 μm, L2 is 310 μm, L4 is 485 μm, and L3 is 191 μm; when the wire diameter is 380 μm, L2 is 465 μm, L4 is 737 μm, and L3 is 287 μm; when the wire diameter was 500. Mu.m, L2 was 622. Mu.m, L4 was 965. Mu.m, and L3 was 378. Mu.m, as shown in Table 1.
TABLE 1
| Diameter of lead (mum) | L2(μm) | L4(μm) | L3(μm) |
| 250 | 310 | 485 | 191 |
| 380 | 465 | 737 | 287 |
| 500 | 622 | 965 | 378 |
As shown in fig. 5, the front and rear edges of the riving knife 111 are rounded in side view; when the diameter of the lead is 250 μm, the bonding point length L5 of the chopper 111 is 720 μm, the trailing edge radius r2 is 203 μm, and the leading edge radius r1 is 254 μm; when the lead diameter is 380 μm, the bonding point length L5 of the chopper 111 is 1080 μm, the trailing edge radius r2 is 305 μm, and the leading edge radius r1 is 381 μm; when the wire diameter is 500 μm, the bond point length L5 of the cleaver 111 is 1440 μm, the trailing radius r2 is 406 μm, and the leading radius r1 is 508 μm, as shown in Table 2.
TABLE 2
| Diameter of lead (mum) | L5(μm) | r2(μm) | r1(μm) |
| 250 | 720 | 203 | 254 |
| 380 | 1080 | 305 | 381 |
| 500 | 1440 | 406 | 508 |
Step two, as shown in fig. 2, manufacturing a fixing clamp 2, wherein the fixing clamp comprises a device fixing plate 21, a hard rubber sealing gasket 22, a vacuum pipeline joint 23, a powerful magnet 24 and a fixing seat 25; the fixed seat 25 is horizontally arranged; the powerful magnet 24 is embedded and arranged at the center of the bottom of the fixed seat 25, so that the fixed seat 25 is fixed; the device fixing plate 21 is horizontally installed on the top of the fixing seat 25; a groove is arranged at the center of the upper surface of the device fixing plate 21; the device to be bonded is placed horizontally in the groove of the device fixing plate 21; a vacuum pipeline is arranged in the fixed seat 25, and one end of the vacuum pipeline is communicated with the groove of the device fixing plate 21; the other end of the vacuum pipeline is communicated with the side wall of the fixed seat 25, and a vacuum pipeline joint 23 is arranged at the end and is connected with an external vacuumizing device; the hard rubber gasket 22 has an annular structure; the hard rubber sealing gasket 22 is arranged at the butt joint surface of the device fixing plate 21 and the fixing seat 25, so that the vacuum degree between the device fixing plate 21 and the fixing seat 25 is ensured.
Thirdly, carrying out plasma cleaning on the surfaces of the devices to be bonded to remove contamination on the surfaces of the chips and the shell; during plasma cleaning, the cleaning power is more than 300W; the cleaning medium is Ar gas with the concentration of 70 sccm; the cleaning time was 200s.
And fourthly, horizontally placing the device to be bonded on the device fixing plate 21, opening the vacuum pipeline joint 23, and vacuumizing through an external vacuumizing device to fix the device to be bonded.
And fifthly, setting bonding pressure, bonding power and bonding time according to the diameter of the output lead of the lead guide pipe 13, and bonding. When the wire diameter is 250 μm, the bonding pressure is 300g; the bonding power is 8.5W; the bonding time is 80ms; when the wire diameter is 380 μm, the bonding pressure is 400g; the bonding power is 11.3W; the bonding time is 100ms; when the wire diameter is 500 μm, the bonding pressure is 800g; the bonding power is 12.7W; the bonding time was 120ms. The specific parameters are shown in Table 3.
TABLE 3 Table 3
| Diameter of lead (mum) | Bonding pressure (g) | Bonding power (w) | Bonding time (ms) |
| 250 | 300 | 8.5 | 80 |
| 380 | 400 | 11.3 | 100 |
| 500 | 800 | 12.7 | 120 |
FIG. 6 illustrates a first point bonding process of a riving knife combination bonding, wherein the riving knife falls to contact the upper surface of a bonding area, and pressure, power and time are sequentially applied, so that bonding points are formed on the bonding area by bonding wires.
FIG. 7 is a drawing process of the chopper assembly, wherein the bonding length and radian between two points are set to form a bonding wire bonding path, and the bonding wire shape is completed.
FIG. 8 shows a second point bonding process of the riving knife assembly, wherein the riving knife is fallen and contacted with the upper surface of the bonding area, and pressure, power and time are sequentially applied, and the bonding wire forms bonding points in the bonding area, wherein the bonding pressure has the greatest influence on the morphology of the bonding points, the bonding power and the bonding time mainly influence the bonding strength of the bonding points, and specific parameter set values are shown in Table 3. The cutter falls to cut off the bonding wire, the aluminum wire is pulled out of the guide pipe by means of the connecting force of incomplete cutting of the cutter, and then the bonding tool rises to a certain height and falls to press the aluminum wire into the cutter groove so as to prepare for bonding of the next point.
Table 4 shows the bonding force values of different bonding wires in the bonding strength test process, and the bonding quality meets the assessment requirement of the bonding strength in GJB128A-1997 (250 μm > 120g,380 μm > 220g,500 μm > 300 g) through the comprehensive judgment of the bonding force values and failure modes.
TABLE 4 Table 4
| Diameter of lead (mum) | Data 1 | Data 2 | Data 3 | Data 4 | Data 5 | Data 6 |
| 250 | 563.66 | 524.81 | 537.25 | 578.43 | 560.32 | 511.78 |
| 380 | 968.56 | 938.77 | 912.26 | 898.97 | 923.08 | 914.23 |
| 500 | 1106.53 | 1138.27 | 1133.89 | 1063.74 | 1058.26 | 1087.23 |
The wire cutting tool 12 cuts off the bonding wire of the device under the drive of the motor after bonding is completed at the second point.
Optionally, the device fixing plate 21 may be selected according to the size of the device, so as to adapt to the packaging of the devices in different packaging forms.
In addition, the top plane of the bonding tool 1 is parallel to the upper surface of the device to be bonded.
In addition, the wire composition used was 99.99% pure aluminum wire, which was divided into 250 μm, 380 μm and 500 μm in diameter.
The invention discloses a deep cavity bonding tool structure and a bonding method thereof, wherein the bonding tool has a special size structure and enough hardness and wear resistance. The bonding method mainly comprises a fixed fixture structure of the device, and the bonding tool is matched with the technological parameters of the fixed fixture to realize the wire bonding of the device.
In addition, the vacuum degree of the bonding fixing clamp can be adjusted according to the size of the device, and the fixing capacity of the device is further improved.
Although the present invention has been described in terms of the preferred embodiments, it is not intended to be limited to the embodiments, and any person skilled in the art can make any possible variations and modifications to the technical solution of the present invention by using the methods and technical matters disclosed above without departing from the spirit and scope of the present invention, so any simple modifications, equivalent variations and modifications to the embodiments described above according to the technical matters of the present invention are within the scope of the technical matters of the present invention.
Claims (3)
1. A deep cavity bonding method, characterized by: the method comprises the following steps:
step one, manufacturing a bonding tool (1) which comprises a wedge-shaped tool (11), a shredding tool (12) and a lead wire guide pipe (13);
the bonding tool (1) specifically comprises:
the wedge-shaped tool (11) is vertically arranged; the lead guide pipe (13) is correspondingly arranged at the front cutter surface of the chopper of the wedge-shaped tool (11); the shredding tool (12) is arranged between the wedge-shaped tool (11) and the lead wire guide pipe (13); the wire conveyed by the wire guide pipe (13) is bonded on the upper surface of a device to be bonded by a wedge-shaped tool (11), and after bonding is finished, the wire is cut off by a shredding tool (12);
the vertical axial length L1 of the wedge tool (11) is 3 inches; the wedge-shaped tool (11) is made of tungsten carbide, and the abrasion life exceeds 50 ten thousand bonding points; the bottom end of the wedge-shaped tool (11) is provided with a chopper (111); the chopper (111) adopts a vapor deposition method to carry out titanium dioxide strengthening treatment, so that the wear resistance of the chopper (111) is improved;
the chamfer angle a of the chopper (111) is 30 degrees when seen from the lead wire direction; seen from the side, the included angle b between the front cutter surface and the vertical direction of the chopper (111) is 5 degrees, and the included angle c between the rear cutter surface and the vertical direction is 5 degrees;
the bottom end of the chopper (111) is provided with an inverted V-shaped groove when seen from the lead direction; the slotting angle d of the inverted V-shaped groove is 70 degrees; setting the width of the inverted V-shaped groove to be L2; the depth of the inverted V-shaped groove is L3; the width of the chopper (111) is L4 when seen from the lead direction; when the wire diameter is 250 μm, L2 is 310 μm, L4 is 485 μm, and L3 is 191 μm; when the wire diameter is 380 μm, L2 is 465 μm, L4 is 737 μm, and L3 is 287 μm; when the wire diameter was 500. Mu.m, L2 was 622. Mu.m, L4 was 965. Mu.m, and L3 was 378. Mu.m;
the front edge and the rear edge of the chopper (111) are of a rounded structure when seen from the side; when the diameter of the lead is 250 mu m, the bonding point length L5 of the chopper (111) is 720 mu m, the radius r2 of the rear edge is 203 mu m, and the radius r1 of the front edge is 254 mu m; when the diameter of the lead is 380 mu m, the bonding point length L5 of the chopper (111) is 1080 mu m, and the radius r2 of the trailing edge is 305 mu m m The radius r1 of the leading edge is 381 mu m The method comprises the steps of carrying out a first treatment on the surface of the When the diameter of the lead wire is 500 mu m When the bonding point length L5 of the chopper (111) is 1440 mu m Trailing edge radius r2 of 406 μ m The radius r1 of the leading edge is 508 mu m ；
Step two, manufacturing a fixing clamp (2), wherein the fixing clamp comprises a device fixing plate (21), a hard rubber sealing gasket (22), a vacuum pipeline joint (23), a powerful magnet (24) and a fixing seat (25);
the fixed clamp (2) comprises the following components:
the fixed seat (25) is horizontally arranged; the powerful magnet (24) is embedded and arranged at the center of the bottom of the fixed seat (25), so that the fixed seat (25) is fixed; the device fixing plate (21) is horizontally arranged at the top of the fixing seat (25); a groove is arranged in the center of the upper surface of the device fixing plate (21); the device to be bonded is horizontally placed in a groove of a device fixing plate (21); a vacuum pipeline is arranged in the fixing seat (25), and one end of the vacuum pipeline is communicated with the groove of the device fixing plate (21); the other end of the vacuum pipeline is communicated with the side wall of the fixed seat (25), and a vacuum pipeline joint (23) is arranged at the end and is connected with an external vacuumizing device; the hard rubber sealing gasket (22) is of an annular structure; the hard rubber sealing gasket (22) is arranged at the butt joint surface of the device fixing plate (21) and the fixing seat (25), so that the vacuum degree between the device fixing plate (21) and the fixing seat (25) is ensured;
thirdly, carrying out plasma cleaning on the surfaces of the devices to be bonded to remove contamination on the surfaces of the chips and the shell;
fourthly, horizontally placing the device to be bonded on a device fixing plate (21), opening a vacuum pipeline joint (23), and vacuumizing through an external vacuumizing device to fix the device to be bonded;
and fifthly, setting bonding pressure, bonding power and bonding time according to the diameter of the output lead of the lead guide pipe (13) to bond.
2. The deep cavity bonding method of claim 1, wherein: in the third step, the cleaning power is more than 300W during plasma cleaning; the cleaning medium is Ar gas with the concentration of 70 sccm; the cleaning time was 200s.
3. A deep cavity bonding method according to claim 2, characterized in that: in the fifth step, when the diameter of the wire is 250 μm, the bonding pressure is 300g; the bonding power is 8.5W; the bonding time is 80ms; when the wire diameter is 380 μm, the bonding pressure is 400g; the bonding power is 11.3W; the bonding time is 100ms; when the wire diameter is 500 μm, the bonding pressure is 800g; the bonding power is 12.7W; the bonding time was 120ms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110215120.3A CN113035725B (en) | 2021-02-25 | 2021-02-25 | Deep cavity bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110215120.3A CN113035725B (en) | 2021-02-25 | 2021-02-25 | Deep cavity bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113035725A CN113035725A (en) | 2021-06-25 |
| CN113035725B true CN113035725B (en) | 2024-04-02 |
Family
ID=76462447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110215120.3A Active CN113035725B (en) | 2021-02-25 | 2021-02-25 | Deep cavity bonding method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113035725B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114799472A (en) * | 2022-03-16 | 2022-07-29 | 东莞市乾丰电子科技有限公司 | Wedge-shaped cleaver and aluminum wire bonding method |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4790897A (en) * | 1987-04-29 | 1988-12-13 | Lsi Logic Corporation | Device for bonding of lead wires for an integrated circuit device |
| JPH03206632A (en) * | 1990-01-08 | 1991-09-10 | Matsushita Electric Ind Co Ltd | Wire bonding apparatus |
| JP2001176915A (en) * | 1999-12-15 | 2001-06-29 | Nec Corp | Wire bonding device and wire bonding method |
| JP2002151542A (en) * | 2000-11-14 | 2002-05-24 | Mitsubishi Electric Corp | Method and system for manufacturing semiconductor package |
| JP2003142520A (en) * | 2001-11-07 | 2003-05-16 | Hitachi Ltd | Method of manufacturing semiconductor device |
| CN103372715A (en) * | 2012-04-20 | 2013-10-30 | 先进科技新加坡有限公司 | Image-assisted system for adjusting a bonding tool |
| CN110783213A (en) * | 2019-10-15 | 2020-02-11 | 中国电子科技集团公司第二十九研究所 | Wedge-shaped cleaver for wire bonding and preparation method |
| CN210878199U (en) * | 2019-10-17 | 2020-06-30 | 成都精蓉创科技有限公司 | No-step straight-through type round hole wire guide hole deep cavity welding cleaver |
| CN211605128U (en) * | 2020-01-07 | 2020-09-29 | 贵州振华风光半导体有限公司 | High-reliability reverse bonding clamp |
-
2021
- 2021-02-25 CN CN202110215120.3A patent/CN113035725B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4790897A (en) * | 1987-04-29 | 1988-12-13 | Lsi Logic Corporation | Device for bonding of lead wires for an integrated circuit device |
| JPH03206632A (en) * | 1990-01-08 | 1991-09-10 | Matsushita Electric Ind Co Ltd | Wire bonding apparatus |
| JP2001176915A (en) * | 1999-12-15 | 2001-06-29 | Nec Corp | Wire bonding device and wire bonding method |
| JP2002151542A (en) * | 2000-11-14 | 2002-05-24 | Mitsubishi Electric Corp | Method and system for manufacturing semiconductor package |
| JP2003142520A (en) * | 2001-11-07 | 2003-05-16 | Hitachi Ltd | Method of manufacturing semiconductor device |
| CN103372715A (en) * | 2012-04-20 | 2013-10-30 | 先进科技新加坡有限公司 | Image-assisted system for adjusting a bonding tool |
| CN110783213A (en) * | 2019-10-15 | 2020-02-11 | 中国电子科技集团公司第二十九研究所 | Wedge-shaped cleaver for wire bonding and preparation method |
| CN210878199U (en) * | 2019-10-17 | 2020-06-30 | 成都精蓉创科技有限公司 | No-step straight-through type round hole wire guide hole deep cavity welding cleaver |
| CN211605128U (en) * | 2020-01-07 | 2020-09-29 | 贵州振华风光半导体有限公司 | High-reliability reverse bonding clamp |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113035725A (en) | 2021-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113035725B (en) | Deep cavity bonding method | |
| JP6715601B2 (en) | Optical semiconductor device package | |
| WO2011122455A1 (en) | Electrode terminal, and method for producing electrode terminal | |
| TWI352368B (en) | Plasma head and plasma-discharging device using th | |
| WO2016161884A1 (en) | Method of layer scan-processing by high-speed electrical arc discharge on open-type three-dimensional flow path | |
| CN110131263B (en) | Copper rod | |
| JP2011192464A (en) | Connection method of electric wire flux | |
| CN215008142U (en) | Wedge-shaped riving knife | |
| CN107634170A (en) | The processing technology of electric automobile flexibility mains connection of the two with hard copper row | |
| CN102500681B (en) | Method for processing and forming pipe fitting connection end of motorcycle frame | |
| CN104253018B (en) | The manufacturing method of semiconductor device | |
| US20200191492A1 (en) | In-Process Roll-Bond Plate and Method for Manufacturing a Roll-Bond Heat Exchanger | |
| CN218253384U (en) | Novel ultrasonic welding machine for probe | |
| CN211028533U (en) | Welding device for composite current collector and foil of lithium ion battery | |
| CN109514063A (en) | A kind of motor winding welding technique | |
| CN213519894U (en) | Fine wire bonding riving knife | |
| CN114505570A (en) | Method for improving welding performance of direct current relay | |
| CN107030910A (en) | A kind of cutting method of semiconductor | |
| CN113770501A (en) | Wedge-shaped cleaver structure for improving bonding density of lead | |
| CN215145517U (en) | Split type eutectic welding suction nozzle | |
| CN215379564U (en) | Vacuum degassing clamp device for special-shaped connecting pipe mobile phone radiating fin | |
| CN221937199U (en) | Wafer cutting blade | |
| CN105645147B (en) | Pre-pressing structure for bending and rebounding of flexible material and pre-pressing method thereof | |
| CN217096032U (en) | Semiconductor power-on device | |
| CN218855864U (en) | Deep cavity welding wedge-shaped cleaver with groove type tool bit end face |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |