CN112967965B - Alignment method, alignment device, alignment apparatus, and computer storage medium - Google Patents
Alignment method, alignment device, alignment apparatus, and computer storage medium Download PDFInfo
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Abstract
According to the alignment method, the alignment device, the alignment equipment and the computer storage medium, when the identification points on the second wafer are located in the alignment space of the alignment piece, the first deformation of the first wafer is obtained, the second deformation is obtained according to the first deformation, the adjusting piece is controlled to deform by the second deformation, and the second wafer is driven to generate the target deformation when the adjusting piece deforms, so that the second wafer is matched with the deformation of the first wafer. When the second wafer is deformed, a first movement distance of the mark point on the second wafer is obtained according to the target deformation, when the first movement distance is larger than a preset distance, the mark point is aligned by the alignment piece, deviation is generated or the mark point cannot be aligned, so that the alignment piece is controlled to move a second distance relative to the mark point according to the first movement distance, the mark point is enabled to be positioned within the alignment distance of the alignment piece, the alignment piece is enabled to align the mark point again, the second wafer is enabled to be matched with the first wafer to be deformed, the alignment precision and stability of the alignment piece are improved, and then bonding quality between the wafers is improved.
Description
Technical Field
The application belongs to the technical field of semiconductors, and particularly relates to an alignment method, an alignment device, alignment equipment and a computer storage medium.
Background
With the continuous development of electronic devices, the electronic devices are popular with the majority of users due to portability and rich and varied operability. But at the same time, the expected value and the requirement of the user on the electronic equipment are also higher and higher, and the requirement on the semiconductor chip is greatly improved. In the semiconductor manufacturing process, as the integration level of semiconductor chips is higher and higher, the critical dimensions are smaller and smaller, and the wafer manufacturing is more and more important for manufacturing semiconductor devices. For example, during wafer processing, the wafer may accumulate a lot of stress due to the surface films and heat treatments, and thus may bend and expand to some extent, thereby affecting the bonding alignment of different wafers.
Disclosure of Invention
In view of this, a first aspect of the present application provides an alignment method comprising:
when the mark points on the second wafer are positioned in the alignment space of the alignment piece, acquiring a first deformation of the first wafer;
controlling the adjusting piece to deform by a second deformation amount according to the first deformation amount so as to enable the second wafer arranged on the adjusting piece to deform by a target deformation amount;
Obtaining a first movement distance of the identification point on the second wafer according to the target deformation; and
and when the first movement distance is greater than a preset distance, controlling the alignment piece to move a second movement distance relative to the identification point according to the first movement distance, so that the identification point is positioned in the alignment space of the alignment piece.
According to the alignment method provided by the first aspect of the application, when the identification points on the second wafer are positioned in the alignment space of the alignment piece, the alignment piece aligns the identification points, the second deformation amount is obtained according to the first deformation amount by obtaining the first deformation amount of the first wafer, the adjustment piece is controlled to deform by the second deformation amount, and as the second wafer is arranged on the adjustment piece, the adjustment piece is deformed to drive the second wafer to deform by the target deformation amount, so that the second wafer is matched with the deformation of the first wafer.
When the second wafer is deformed, a first movement distance of the identification point on the second wafer is obtained according to the target deformation, when the first movement distance is larger than a preset distance, the alignment mark point of the alignment piece generates deviation or cannot be aligned, so that the alignment piece is controlled to move a second distance relative to the identification point according to the first movement distance, the identification point is enabled to be positioned in the alignment space of the alignment piece, the alignment piece is enabled to align the identification point again, the second wafer is enabled to be matched with the first wafer to be deformed, meanwhile, the alignment precision and alignment stability of the alignment piece are improved, and bonding quality between the wafers is further improved.
Wherein "when the mark point on the second wafer is located in the alignment space of the alignment member," obtaining the first deformation of the first wafer "includes:
acquiring an initial distance between the identification point on the second wafer and the alignment piece;
judging whether the identification point on the second wafer is positioned in the alignment space of the alignment piece according to the initial distance;
and when the identification point on the second wafer is positioned in the alignment space of the alignment piece, acquiring a first deformation of the first wafer.
Wherein the "controlling the adjustment member to deform by the second deformation amount according to the first deformation amount so as to cause the second wafer disposed on the adjustment member to deform by the target deformation amount" includes:
acquiring the initial deformation of the second wafer and the initial deformation of the adjusting piece;
and controlling the adjusting piece to deform by the second deformation amount according to the first deformation amount, the initial deformation amount of the second wafer and the initial deformation amount of the adjusting piece.
Wherein the "controlling the adjustment member to deform by the second deformation amount according to the first deformation amount so as to cause the second wafer disposed on the adjustment member to deform by the target deformation amount" includes:
When the second wafer is attached to the adjusting piece, controlling the adjusting piece to deform by the second deformation according to the first deformation so as to enable the second wafer arranged on the adjusting piece to deform by the target deformation; wherein the target deformation amount is equal to the second deformation amount.
Before the step of controlling the adjusting member to deform by the second deformation amount according to the first deformation amount when the second wafer is attached to the adjusting member, so that the second wafer on the adjusting member deforms by the target deformation amount, the method further comprises:
acquiring the gas quantity between the second wafer and the adjusting piece;
judging whether the second wafer is attached to the adjusting piece according to the gas quantity;
before the adjusting piece is controlled to deform by the second deformation amount according to the first deformation amount so as to enable the second wafer arranged on the adjusting piece to deform by the target deformation amount, the method further comprises the step of;
acquiring an initial distance between the identification point on the second wafer and the alignment piece;
after "the adjusting member is controlled to deform by the second deformation amount according to the first deformation amount so as to deform the second wafer provided on the adjusting member by the target deformation amount", the method further includes:
Obtaining a first movement direction of the identification point according to the initial distance and the target deformation;
obtaining a second movement direction of the alignment member according to the first movement direction; wherein the first movement direction is the same as the second movement direction.
When the first movement distance is greater than the preset distance, the method controls the alignment member to move a second movement distance relative to the identification point according to the first movement distance, so that the identification point is located in the alignment space of the alignment member, and then further comprises the following steps:
controlling the adjusting piece to move relative to the first wafer so as to bond the surface of the second wafer arranged on the adjusting piece with the surface of the first wafer;
and controlling the alignment piece to return to an initial position according to the second movement distance and the second movement direction of the identification point.
When the first movement distance is greater than a preset distance, controlling the alignment member to move a second movement distance relative to the identification point according to the first movement distance so that the identification point is located in the alignment space of the alignment member includes:
acquiring the deformation speed of the adjusting piece deformed by the second deformation amount;
According to the deformation speed, obtaining the movement speed of the alignment piece relative to the movement of the mark point;
when the first movement distance is greater than the preset distance, controlling the alignment member to move at the movement speed for a second movement distance relative to the identification point according to the first movement distance, so that the identification point is positioned in the alignment space of the alignment member; and when the adjusting piece finishes the deformation of the second deformation amount, the aligning piece moves to complete the second movement distance.
Wherein the step of obtaining the movement speed of the alignment member relative to the mark point according to the deformation speed includes:
according to the deformation speed, obtaining the movement speed of the alignment piece relative to the movement of the mark point; wherein the deformation speed is equal to the movement speed.
Wherein when the first movement distance is greater than the preset distance, the control of the second movement distance of the alignment element relative to the identification point according to the first movement distance includes:
when the first movement distance is greater than a preset distance, controlling the alignment piece to move a second movement distance relative to the identification point according to the first movement distance; wherein the first movement distance is equal to the second movement distance.
A second aspect of the present application provides an alignment device comprising:
an acquisition unit for acquiring a first deformation amount of a first wafer;
the control unit is used for controlling the adjusting piece to deform by a second deformation amount according to the first deformation amount so as to enable the second wafer arranged on the adjusting piece to deform by a target deformation amount;
the control unit is further used for obtaining a first movement distance of the identification point on the second wafer according to the target deformation;
when the first movement distance is greater than a preset distance, the control unit is further used for controlling the alignment piece to move a second movement distance relative to the identification point so that the identification point is located in the alignment space of the alignment piece.
According to the alignment device provided by the second aspect of the application, the second wafer can be matched with the first wafer to deform through the mutual matching of the acquisition unit and the control unit, and meanwhile, the alignment precision and the alignment stability of the alignment piece are improved, so that the bonding quality between the wafers is improved.
The third aspect of the application provides an alignment device, which comprises a shell, an adjusting piece, an alignment piece and a processor, wherein a containing space is formed in the shell, the adjusting piece and the alignment piece are arranged in the containing space, the alignment piece is used for aligning a mark point of a second wafer arranged on the adjusting piece, the processor is arranged in the containing space and electrically connected with the adjusting piece and the alignment piece, and the processor is used for executing the alignment method provided by the first aspect of the application.
According to the alignment equipment provided by the third aspect of the application, the alignment accuracy and the alignment stability of the alignment piece can be improved while the second wafer is matched with the first wafer to deform by executing the alignment method provided by the first aspect of the application, so that the bonding quality between the wafers is improved.
A fourth aspect of the application provides a computer storage medium storing a computer program comprising program instructions which, when executed by a processor, cause the processor to perform an alignment method as provided by the first aspect of the application.
According to the computer storage medium provided by the fourth aspect of the application, by executing the alignment method provided by the first aspect of the application, the alignment accuracy and the alignment stability of the alignment piece can be improved while the second wafer is matched with the first wafer to deform, so that the bonding quality between the wafers is improved.
Drawings
In order to more clearly explain the technical solutions in the embodiments of the present application, the drawings that are used in the embodiments of the present application will be described below.
Fig. 1 is a flow chart of an alignment method according to an embodiment of the application.
Fig. 2 is a schematic structural diagram of wafer bonding according to an embodiment of the present application.
Fig. 3 is a schematic structural view of an alignment apparatus according to an embodiment of the present application.
Fig. 4 is a schematic structural view of an alignment apparatus according to still another embodiment of the present application.
Fig. 5 is a schematic structural view of an alignment apparatus according to another embodiment of the present application.
Fig. 6 is a schematic flow chart included in S100 according to an embodiment of the application.
Fig. 7 is a schematic flow chart included in S200 according to an embodiment of the application.
Fig. 8 is a schematic flow chart included in S200 according to another embodiment of the application.
Fig. 9 is a schematic flow chart included in S230 according to an embodiment of the application.
Fig. 10 is a schematic flow chart included in S200 according to another embodiment of the application.
Fig. 11 is a schematic flow chart included in S400 according to an embodiment of the application.
Fig. 12 is a schematic flow chart included in S400 according to another embodiment of the present application.
Fig. 13 is a schematic flow chart included in S440 in an embodiment of the application.
Fig. 14 is a schematic flow chart included in S400 according to another embodiment of the application.
Fig. 15 is an electronic structure diagram of an alignment device according to an embodiment of the application.
Description of the reference numerals:
the device comprises a first wafer-11, a second wafer-12, a marking point-121, an alignment part-13, a distance judging part 131, a vacuum adsorption part 132, an adjusting part-14, an alignment device-2, an acquisition unit-21, a control unit-22, an alignment device-3, a shell-31, an accommodating space-311, a processor-32, a computer storage medium-4, an alignment space-L, a first movement distance-L1 and a second movement distance-L2.
Detailed Description
The following are preferred embodiments of the present application, and it should be noted that modifications and variations can be made by those skilled in the art without departing from the principle of the present application, and these modifications and variations are also considered as the protection scope of the present application.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein may be combined with other embodiments. Embodiments of the present application will be described in detail below with reference to the accompanying drawings.
Before the technical scheme of the application is described, the technical problems in the related art are described in detail.
With the continuous development of electronic devices, the electronic devices are popular with the majority of users due to portability and rich and varied operability. But at the same time, the expected value and the requirement of the user on the electronic equipment are also higher and higher, and the requirement on the semiconductor chip is greatly improved. In the semiconductor manufacturing process, as the integration level of semiconductor chips is higher and higher, the critical dimensions are smaller and smaller, and the wafer manufacturing is more and more important for manufacturing semiconductor devices. For example, during wafer processing, the wafer may accumulate a lot of stress due to the surface films and heat treatments, and thus may bend and expand to some extent, thereby affecting the bonding alignment of different wafers.
In the related art, the stability of the wafer manufacturing process and the difference between different machines may cause different wafers to have different amounts of bending and expansion, so that there is a deformation difference between wafers or between wafer groups, and such a difference is difficult to eliminate. Meanwhile, in the wafer bonding process, in order to eliminate the influence caused by deformation difference between wafers, the deformation amount of the wafers to be bonded is adjusted, the deformation of the wafers can drive the deformation of the identification points on the wafers, so that the alignment parts cannot align with the identification points or deviate from the alignment of the identification points, the bonding quality of the wafers is further reduced, and the deformation difference has an increasing influence on the manufacture of semiconductor devices along with the updating of the technology.
In view of this, the present application proposes an alignment method to solve the above problems. Referring to fig. 1 to 3, fig. 1 is a flow chart of an alignment method according to an embodiment of the application, fig. 2 is a structural diagram of wafer bonding according to an embodiment of the application, and fig. 3 is a structural diagram of an alignment apparatus according to an embodiment of the application. The alignment method is applied to the alignment apparatus 3 for aligning the first wafer 11 with the second wafer 12, and includes, but is not limited to, S100, S200, S300, S400. Among them, S100, S200, S300, S400 are described in detail below.
S100: when the mark point 121 on the second wafer 12 is located within the alignment space L of the alignment member 13, a first deformation amount of the first wafer 11 is obtained.
Specifically, wafers (wafer) are basic raw materials for manufacturing semiconductor devices, and are subjected to a series of semiconductor manufacturing processes to form very small circuit structures, and then cut, packaged and tested to form chips, which are widely used in various electronic devices. It will be appreciated that during processing, the wafer is subject to numerous surface films and heat treatments, and that a significant amount of stress is built up on the wafer, resulting in some degree of bending deformation. The first deformation amount of the first wafer 11 may be obtained by means of a laser scanning technique, an image sensing technique, or the like.
Specifically, the alignment member 13 in this embodiment is mainly used for aligning the mark point 121 on the second wafer 12. The alignment member 13 has an alignment pitch L, and when the distance between the alignment member 13 and the object to be aligned is within the alignment pitch L, the alignment member 13 aligns the identification point 121. The alignment of the alignment member 13 with the mark point 121 is understood to mean that the alignment member 13 can accurately acquire the image of the mark point 121 on the second wafer 12.
Alternatively, when the mark point 121 on the second wafer 12 is located within the alignment pitch L of the alignment member 13, the alignment member 13 directly corresponds to the mark point 121 on the first wafer 11, and the alignment member 13 aligns with the mark point 121 on the second wafer 12.
Alternatively, the alignment member 13 includes, but is not limited to, a lens, an optical lens, a micro lens, a zoom lens, an infrared lens, etc., and the alignment interval L of the alignment member 13 may be understood as a focal length range in which the alignment member 13 can obtain a clear image of the identification point 121, when the identification point 121 is located outside the alignment interval L, it may cause the alignment member 13 to lose focus, and it may be difficult to obtain a clear image of the identification point 121, and when the identification point 121 is located within the alignment interval L, the alignment member 13 focuses the identification point 121, i.e., the alignment member 13 aligns the identification point 121.
The alignment member 13 has a maximum alignment distance and a minimum alignment distance. The maximum alignment distance, the minimum alignment distance, and the spacing between the maximum and minimum alignment distances constitute an alignment spacing L of the alignment assembly. Wherein, the maximum alignment distance refers to the maximum distance that the alignment member 13 can align with the mark point 121, and the minimum alignment distance refers to the minimum distance that the alignment member 13 can align with the mark point 121.
S200: controlling the adjusting piece 14 to deform by a second deformation amount according to the first deformation amount so as to enable the second wafer 12 arranged on the adjusting piece 14 to deform by a target deformation amount;
specifically, in order to bond the second wafer 12 to the first wafer 11, the deformation of the second wafer 12 needs to be matched with the deformation of the first wafer 11. It can be understood that the first deformation amount of the first wafer 11 is obtained, the second deformation amount matched with the first deformation amount is calculated according to the first deformation amount, and the deformation of the adjusting member 14 is controlled to deform by the second deformation amount, and the deformation of the adjusting member 14 drives the second wafer 12 arranged on the adjusting member 14 to generate the deformation of the target deformation amount. The target deformation is obtained according to the second deformation, and a specific calculation manner will be described in detail below.
Alternatively, the adjusting member 14 in the present embodiment is mainly used for fixing the second wafer 12 and deforming the second wafer 12, and the adjusting member 14 includes, but is not limited to, a fixture, a chuck, a transmission fixture, and the like.
Optionally, the first deformation amount and the second deformation amount are obtained through a preset calculation mode, and the corresponding calculation mode can be adjusted according to different matching requirements of the first wafer 11 and the second wafer 12. For example, when the first wafer 11 is matched with the second wafer 12, the first deformation amount is equal to the second deformation amount, and then the second deformation amount can be directly obtained by the first deformation amount. For another example, when the first wafer 11 is matched with the second wafer 12, the first deformation is proportional to the second deformation by a factor, and then the second deformation may be based on the first deformation and the proportional factor. Further alternatively, the calculation manners of the first deformation amount and the second deformation amount may be adjusted or obtained by other manners, which are not described herein.
S300: obtaining a first movement distance L1 of the identification point 121 on the second wafer 12 according to the target deformation;
referring to fig. 4 together, fig. 4 is a schematic structural diagram of an alignment apparatus according to another embodiment of the application. Specifically, since the mark point 121 is disposed on the second wafer 12, when the second wafer 12 disposed on the adjusting member 14 is deformed, the mark point 121 is deformed and displaced along with the second wafer 12. Wherein the identification point 121 is moved by a first movement distance L1 such that the distance from the identification point 121 on the second wafer 12 to the alignment member 13 is changed. Alternatively, the marking point 121 is moved by the first movement distance L1 such that the vertical distance from the marking point 121 on the second wafer 12 to the alignment member 13 is changed. Further alternatively, the distance from the mark point 121 to the alignment member 13 on the second wafer 12 refers to the distance from the mark point 121 to the surface of the alignment member 13 on the side close to the mark point 121.
In some embodiments, the overall deformation of the second wafer 12 is the same, and since the identification point 121 is disposed on the second wafer 12, the location of the identification point 121 also generates the target deformation when the second wafer 12 generates the target deformation, and thus the first movement distance L1 is equal to the value of the target deformation in value.
Alternatively, the overall deformation of the second wafer 12 is different, and the first movement distance L1 of the mark point 121 on the second wafer 12 may be obtained according to the target deformation and the deformation coefficient of the second wafer 12. Of course, in other embodiments, the first movement distance L1 may be obtained from the target deformation amount in other manners.
Step S400: when the first movement distance L1 is greater than a preset distance, the alignment member 13 is controlled to move by a second movement distance L2 relative to the identification point 121 according to the first movement distance L1, so that the identification point 121 is located within the alignment space L of the alignment member 13.
Referring to fig. 5 together, fig. 5 is a schematic structural diagram of an alignment apparatus according to another embodiment of the application. Alternatively, when the second wafer 12 is deformed, the first movement distance L1 of the identification point 121 on the second wafer 12 is obtained according to the target deformation amount, and when the first movement distance L1 is greater than the preset distance, the alignment member 13 is deviated from aligning with the identification point 121 or cannot align with the identification point 121. Therefore, the distance between the alignment member 13 and the mark point 121 can be adjusted by controlling the movement of the alignment member 13 relative to the mark point 121 by the second distance according to the first movement distance L1 so that the mark point 121 is located within the alignment pitch L of the alignment member 13, and the alignment member 13 realigns the mark point 121.
Further alternatively, according to the difference of the movement direction of the identification point 121 on the second wafer 12, the preset distance in this embodiment is the difference between the initial distance between the identification point 121 and the alignment member 13 and the minimum alignment distance, or the preset distance is the difference between the identification point 121 and the alignment member 13 and the maximum alignment distance.
According to the alignment method provided by the embodiment, when the identification point 121 on the second wafer 12 is located in the alignment space L of the alignment member 13, the alignment member 13 aligns the identification point 121, and the second deformation amount is obtained according to the first deformation amount by obtaining the first deformation amount of the first wafer 11, so as to control the adjustment member 14 to deform by the second deformation amount, and as the second wafer 12 is arranged on the adjustment member 14, the adjustment member 14 deforms, the second wafer 12 is driven to deform by the target deformation amount, so that the second wafer 12 matches the deformation of the first wafer 11.
When the second wafer 12 is deformed, a first movement distance L1 of the identification point 121 on the second wafer 12 is obtained according to the target deformation amount, when the first movement distance L1 is greater than a preset distance, the alignment piece 13 aligns the identification point 121 to generate deviation or can not align the identification point 121, so that the alignment piece 13 is controlled to move a second distance relative to the identification point 121 according to the first movement distance L1, the identification point 121 is positioned in an alignment space L of the alignment piece 13, the alignment piece 13 aligns the identification point 121, the alignment piece 13 is matched with the first wafer 11 to deform, and meanwhile, the alignment precision and alignment stability of the alignment piece 13 are improved, and then the bonding quality between the wafers is improved.
Referring to fig. 6, fig. 6 is a schematic flow chart of S100 according to an embodiment of the application. In this embodiment, S100 "obtaining the first deformation amount of the first wafer 11 when the mark point 121 on the second wafer 12 is located within the alignment pitch L of the alignment member 13" includes S110, S120, and S130. The descriptions of S110, S120, and S130 are as follows.
S110, acquiring the initial distance between the identification point 121 on the second wafer 12 and the alignment piece 13.
S120, judging whether the identification point 121 on the second wafer 12 is positioned within the alignment space L of the alignment piece 13 according to the initial distance.
S130, when the mark point 121 on the second wafer 12 is located within the alignment pitch L of the alignment member 13, the first deformation amount of the first wafer 11 is obtained.
Through the steps, the initial position of the identification point 121 on the second wafer 12 can be directly judged, and the initial position is ensured to be positioned in the alignment space L, so that the alignment piece 13 is aligned with the identification point 121 in advance, and the subsequent steps are convenient to carry out.
In some embodiments, the method for determining whether the mark point 121 on the second wafer 12 is located within the alignment pitch L of the alignment member 13 according to the initial distance is to determine whether the initial distance is equal to any one of the maximum alignment distance or the minimum alignment distance, or the initial distance is smaller than the maximum alignment distance or larger than the minimum alignment distance. If so, the identification point 121 is located within the alignment pitch L, otherwise, the identification point 121 is located outside the alignment pitch L.
For example, when the alignment distance L of the alignment member 13 is y 1 To y 2 The preset distance is y 0 Then when y 1 ≤y 0 ≤y 2 When the mark point 121 on the second wafer 12 is located in the alignment space L of the alignment member 13, the first deformation amount of the first wafer 11 is obtained. Of course, in other embodiments, there are other ways to determine whether the mark point 121 is located within the alignment space L according to the initial distance, for example, if the alignment member 13 includes a distance determining portion 131, the distance determining portion 131 directly obtains the initial distance, and determines whether the initial distance is located within the preset alignment space L.
Referring to fig. 7 together, fig. 7 is a schematic flow chart of S200 according to an embodiment of the application. In this embodiment, S200 "controlling the adjustment member 14 to deform by the second deformation amount according to the first deformation amount so that the second wafer 12 disposed on the adjustment member 14 deforms by the target deformation amount" includes S210 and S220. The descriptions of S210 and S220 are as follows.
S210, acquiring an initial deformation amount of the second wafer 12 and an initial deformation amount of the adjuster 14.
S220, controlling the deformation of the adjusting piece 14 with the second deformation amount according to the first deformation amount, the initial deformation amount of the second wafer 12 and the initial deformation amount of the adjusting piece 14.
In some embodiments, the initial deformation amount is generated due to stress during the manufacturing process of the second wafer 12, and the adjusting member 14 is used for adjusting the deformation, and the initial state thereof generally has the initial deformation amount, so that the initial deformation amount of the second wafer 12 and the initial deformation amount of the adjusting member 14 need to be considered while the deformation amount of the adjusting member 14 is controlled by the first deformation amount.
For example, the first deformation is x 1 The initial deformation of the second wafer 12 is x 2 The initial deformation of the regulating member 14 is b, the second deformation y x Then is y x ＝k*(x 1 -x 2 ) +b, wherein k is a correction coefficient, the value range is 0.1 to 1, and the correction coefficient is determined according to different wafer deformation conditions. In other embodiments, of course, the initial deflection of the trim 14 may be 0,
therefore, through the above steps, the second deformation amount can be obtained from the correction coefficient, the first deformation amount, the initial deformation amount of the second wafer 12, and the initial deformation amount of the adjustment member 14. Specifically, the second deformation amount may be obtained by adding the initial deformation amount of the adjustment member 14 to the product of the correction coefficient and the difference between the second deformation amount and the initial deformation amount of the second wafer 12.
Referring to fig. 8 together, fig. 8 is a schematic flow chart of S200 according to another embodiment of the application. In this embodiment, S200 "controlling the adjustment member 14 to deform by the second deformation amount according to the first deformation amount so as to deform the second wafer 12 disposed on the adjustment member 14 by the target deformation amount" includes S230. The description of S230 is as follows.
S230, when the second wafer 12 is attached to the adjusting piece 14, controlling the adjusting piece 14 to deform by the second deformation amount according to the first deformation amount, so that the second wafer 12 arranged on the adjusting piece 14 deforms by the target deformation amount; wherein the target deformation amount is equal to the second deformation amount.
Specifically, since the second wafer 12 is disposed on the adjusting member 14, the deformation of the adjusting member 14 drives the second wafer 12 to deform, when the second wafer 12 is attached to the adjusting member 14, and the adjusting member 14 deforms by the second deformation, the second wafer 12 generates the target deformation, and the target deformation is equal to the second deformation.
In this embodiment, the second wafer 12 is attached to the adjusting member 14, so that the calculation process of the target deformation and the second deformation is removed, the calculation steps are reduced, the alignment method is simpler, and the quick alignment between the alignment member 13 and the second wafer 12 is facilitated, so that the first wafer 11 and the second wafer 12 are conveniently matched.
Referring to fig. 9 together, fig. 9 is a schematic flow chart of S230 according to an embodiment of the application. In this embodiment, when the second wafer 12 is attached to the adjustment member 14, the adjustment member 14 is controlled to deform by the second deformation amount according to the first deformation amount, so that the second wafer 12 provided on the adjustment member 14 is deformed by the target deformation amount at S230 "; wherein the target deformation amount is equal to the second deformation amount "including S230a, S230b before. The descriptions of S230a and S230b are as follows.
S230a, acquiring the gas amount between the second wafer 12 and the adjustment member 14.
And S230b, judging whether the second wafer 12 is attached to the adjusting piece 14 according to the gas quantity.
In some embodiments, the adjusting member 14 has a vacuum adsorption portion 132, the second wafer 12 is adsorbed on the adjusting member 14 by the vacuum adsorption portion 132, the amount of gas between the second wafer 12 and the adjusting member 14 can be obtained by the vacuum adsorption portion 132, and when the amount of gas between the second wafer 12 and the adjusting member 14 is 0, it can be determined that the second wafer 12 is attached to the adjusting member 14.
Referring to fig. 10 together, fig. 10 is a schematic flow chart included in S200 according to another embodiment of the application. In this embodiment, S200 "before controlling the adjustment member 14 to deform by the second deformation amount according to the first deformation amount so as to deform the second wafer 12 disposed on the adjustment member 14 by the target deformation amount" includes S190; s240 and S250 are included after S200 "the adjustment member 14 is controlled to deform by the second deformation amount according to the first deformation amount so that the second wafer 12 disposed on the adjustment member 14 is deformed by the target deformation amount". Among them, S190, S240, S250 are described below.
S190, acquiring the initial distance between the identification point 121 on the second wafer 12 and the alignment piece 13.
S240, obtaining the first movement direction of the identification point 121 according to the initial distance and the target deformation amount.
S250, obtaining a second movement direction of the alignment piece 13 according to the first movement direction; wherein the first movement direction is the same as the second movement direction.
Specifically, after the initial distance between the mark point 121 on the second wafer 12 and the alignment member 13 is obtained, when the mark point 121 on the second wafer 12 is located in the alignment space L of the alignment member 13, a first deformation amount of the first wafer 11 is obtained; the adjusting piece 14 is controlled to deform by the second deformation amount according to the first deformation amount, so that the second wafer 12 arranged on the adjusting piece 14 deforms by the target deformation amount, the identification point 121 on the second wafer 12 moves along with the deformation of the second wafer 12, the distance between the identification point 121 and the alignment piece 13 is changed, and the alignment distance between the identification point 121 and the alignment piece 13 can be obtained. By comparing the initial distance with the alignment distance, a first direction of movement of the identification point 121 may be derived. It follows that the first movement direction of the identification point 121 is obtained from the initial distance and the target deformation amount.
Optionally, the first direction of movement is the same as the second direction of movement. It can be understood that, since the first movement direction is the same as the second movement direction, when calculating the first movement distance L1 of the identification point 121 and the second movement distance L2 of the alignment member 13 moving relative to the identification point 121, only specific values of the first movement distance L1 and the second movement distance L2 are calculated to obtain specific positions of the alignment member 13 and the identification point 121, which is beneficial to improving alignment stability of the alignment member 13, and simplifying and accelerating operation steps of the alignment method. Of course, in other embodiments, the first movement direction and the second movement direction may be different, and the present embodiment will be described only with reference to the first movement direction and the second movement direction being the same.
In some embodiments, the first direction of motion is a direction perpendicular to the horizontal, and the second direction of motion is the same as the first direction of motion.
Referring to fig. 11 together, fig. 11 is a schematic flow chart of S400 according to an embodiment of the application. In this embodiment, S400 "when the first movement distance L1 is greater than the preset distance, the alignment member 13 is controlled to move by the second movement distance L2 relative to the identification point 121 according to the first movement distance L1, so that the identification point 121 is located within the alignment space L of the alignment member 13" and then S410 and S420 are included. The descriptions of S410 and S420 are as follows.
S410, controlling the movement of the adjusting member 14 relative to the first wafer 11, so as to bond the surface of the second wafer 12 disposed on the adjusting member 14 with the surface of the first wafer 11.
S420, controlling the alignment member 13 to return to the initial position according to the second movement distance L2 and the second movement direction of the identification point 121.
It can be understood that the adjusting member 14 is controlled to move relative to the first wafer 11 to drive the second wafer 12 to move relative to the first wafer 11, so that the surface of the second wafer 12 disposed on the adjusting member 14 is bonded to the surface of the first wafer 11, and the aligning member 13 is controlled to return to the initial position at this time, so that when the next wafer bonding operation starts, the aligning member 13 is beneficial to align the alignment mark of the next wafer, so as to accelerate the next wafer bonding operation progress, and further the alignment efficiency and the wafer bonding quality of the whole alignment method.
Referring to fig. 12 together, fig. 12 is a flowchart of S400 according to another embodiment of the application. In this embodiment, S400 "when the movement distance is greater than the preset distance, the alignment member 13 is controlled to move by the movement distance relative to the identification point 121, so that the identification point 121 is located within the alignment space L of the alignment member 13" and then includes S430, S440, and S450. Among them, S430, S440, S450 are described as follows.
And S430, obtaining the deformation speed of the adjusting piece 14 deformed by the second deformation amount.
S440, according to the deformation speed, obtaining the movement speed of the alignment member 13 relative to the identification point 121.
S450, when the first movement distance L1 is greater than the preset distance, controlling the alignment member 13 to move at the movement speed by a second movement distance L2 relative to the identification point 121 according to the first movement distance L1, so that the identification point 121 is positioned in the alignment space L of the alignment member 13; wherein, when the adjusting member 14 finishes the deformation of the second deformation amount, the aligning member 13 moves to complete the second movement distance L2.
Specifically, when the adjusting member 14 finishes the deformation of the second deformation amount, the movement of the alignment member 13 finishes the second movement distance L2, that is, the total time for the adjusting member 14 to finish the second deformation amount is equal to the total time for the alignment member 13 to finish the second movement distance L2. Therefore, when the adjusting member 14 finishes the deformation of the second deformation amount, the aligning member 13 completes the alignment synchronously, which is beneficial to unifying the identity of the alignment method, standardizing the alignment process, shortening the preparation time before the next alignment work and improving the alignment efficiency.
It can be understood that, since the mark point 121 is disposed on the second wafer 12, the movement speed of the mark point 121 can be obtained according to the deformation speed of the second wafer 12, and the movement speed of the alignment member 13 relative to the mark point 121 can be obtained according to the fact that the time for ending the second deformation amount of the adjustment member 14 is the same as the total time for completing the second movement distance L2 of the alignment member 13 and the second movement distance L2 for moving the alignment member 13 relative to the mark point 121. It will be appreciated that the second movement distance L2 can be derived from the movement speed and the total time.
Referring to fig. 13 together, fig. 13 is a schematic flow chart included in S440 in an embodiment of the application. In this embodiment, S440 "when the movement distance is greater than the preset distance, the alignment member 13 is controlled to move by the movement distance with respect to the identification point 121 so that the identification point 121 is located within the alignment space L of the alignment member 13" then includes S440a. The description of S440a is as follows.
S440a, according to the deformation speed, obtaining the movement speed of the alignment member 13 relative to the identification point 121; wherein the deformation speed is equal to the movement speed.
It will be appreciated that, since the mark point 121 is provided on the second wafer 12, when the partial deformation amount of the second wafer 12 including the mark point 121 coincides with the target deformation amount of the second wafer 12, the deformation speed of the second wafer 12 is equal to the movement speed of the mark point 121.
Referring to fig. 14 together, fig. 14 is a flowchart of S400 according to another embodiment of the application. In this embodiment, S400 "when the first movement distance L1 is greater than the preset distance, controlling the alignment member 13 to move by the second movement distance L2" relative to the identification point 121 according to the first movement distance L1 includes S460. The description of S460 is as follows.
S460, when the first movement distance L1 is greater than a preset distance, controlling the alignment member 13 to move by a second movement distance L2 relative to the identification point 121 according to the first movement distance L1; wherein the first movement distance L1 is equal to the second movement distance L2.
It can be understood that, since the mark point 121 on the second wafer 12 is located in the alignment space L of the alignment member 13 in the alignment method, the first deformation of the first wafer 11 is obtained, when the first movement distance L1 is equal to the second movement distance L2, and when the mark point 121 moves by the first movement distance L1, it can be ensured that the mark point 121 is still located in the alignment space L after the mark point 121 moves by the second movement distance L2 relative to the mark point 121, i.e. the alignment member 13 is still aligned with the mark point 121, so as to improve the alignment accuracy and alignment stability of the alignment member 13, and further improve the bonding quality between the wafers.
The above is a detailed description of the alignment method of the present application, and according to an embodiment of the present application, there is also provided an alignment apparatus 2 and an alignment device 3. The method may be used to control the alignment device and the alignment apparatus 1 described above. Of course, the alignment device 2 and the alignment apparatus 3 may be controlled by other methods, which is not limited in this application. The alignment device 2, the alignment equipment 3 and the alignment method provided by the embodiment of the application can be matched with each other for use, and can also be independently used, so that the essence of the application is not affected.
Referring to fig. 15 together, fig. 15 is an electronic structure diagram of an alignment device according to an embodiment of the application. The present embodiment also provides an alignment device 2, which is applied to an alignment apparatus 3, where the alignment device 2 includes an obtaining unit 21 and a control unit 22, the obtaining unit 21 is configured to obtain a first deformation amount of a first wafer 11, and the control unit 22 is configured to control the adjustment member 14 to deform by a second deformation amount according to the first deformation amount, so as to deform the second wafer 12 provided on the adjustment member 14 by a target deformation amount; the control unit 22 is further configured to obtain a first movement distance L1 of the identification point 121 on the second wafer 12 according to the target deformation; when the movement distance is greater than the preset distance, the control unit 22 is further configured to control the alignment member 13 to move by a second movement distance L2 relative to the identification point 121, so that the identification point 121 is located within the alignment space L of the alignment member 13.
According to the alignment device 2 provided by the application, the second wafer 12 can be matched with the first wafer 11 to deform through the mutual matching of the acquisition unit 21 and the control unit 22, and meanwhile, the alignment precision and the alignment stability of the alignment piece 13 are improved, so that the bonding quality between the wafers is improved.
The present embodiment further provides an alignment apparatus 3, including a housing 31, an adjusting member 14, an alignment member 13, and a processor 32, where an accommodating space 311 is formed in the housing 31, the adjusting member 14 and the alignment member 13 are disposed in the accommodating space 311, the alignment member 13 is used for aligning the mark point 121 of the second wafer 12 disposed on the adjusting member 14, the processor 32 is disposed in the accommodating space 311 and electrically connects the adjusting member 14 and the alignment member 13, and the processor 32 is used for executing the alignment method described above.
Alternatively, the processor 32 may be one or more central processing units, CPUs. In the case where the processor 32 is a CPU, the CPU may be a single-core CPU or a multi-core CPU.
Alternatively, the processor 32 may include a central processing unit 32 (central processing unit, CPU), a digital signal processor 32 (digital signal processor, DSP), an application-specific integrated circuit (application-specific integrated circuit, ASIC), a field programmable gate array (field programmable gate array, FPGA), or the like.
The present embodiment also provides a computer storage medium 4, by executing the above alignment method, the second wafer 12 can be deformed while matching the first wafer 11, so as to improve the alignment accuracy and alignment stability of the alignment member 13, and further improve the bonding quality between the wafers.
Optionally, the computer storage medium 4 stores a computer program comprising program instructions that, when executed by the processor 32, cause the processor 32 to perform the alignment method described above.
According to the computer storage medium 4 provided by the application, the second wafer 12 can be matched with the first wafer 11 to deform by executing the alignment method, and meanwhile, the alignment precision and the alignment stability of the alignment piece 13 are improved, so that the bonding quality between the wafers is improved.
Those skilled in the art will appreciate that implementing all or part of the above-described embodiments may be accomplished by way of a computer program stored on a computer-readable storage medium, which when executed may comprise the steps of embodiments of the methods described above. The present application may be a system, method, and/or computer program product. The computer program product may include a computer readable storage medium having computer readable program instructions embodied thereon for causing the processor 32 to implement aspects of the present application.
The computer readable storage medium may be a tangible device that can hold and store instructions for use by an instruction execution device. Alternatively, a computer readable storage medium includes, but is not limited to, an electronic storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination of the foregoing. Further alternatively, the computer readable storage medium (a non-exhaustive list) includes: portable computer disks, hard disks, random Access Memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), static Random Access Memory (SRAM), portable compact disk read-only memory (CD-ROM), digital Versatile Disks (DVD), memory sticks, floppy disks, mechanical coding devices, punch cards or in-groove structures such as punch cards or grooves having instructions stored thereon, and any suitable combination of the foregoing. Computer-readable storage media, as used herein, are not to be construed as transitory signals per se, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through waveguides or other transmission media (e.g., optical pulses through fiber optic cables), or electrical signals transmitted through wires.
The computer readable program instructions described herein may be downloaded from a computer readable storage medium to the respective computing/processing device or to an external computer or external storage device via a network, such as the internet, a local area network, a wide area network, and/or a wireless network. The network may include copper transmission cables, fiber optic transmissions, wireless transmissions, routers, firewalls, switches, gateway computers and/or edge servers. The network interface card or network interface in each computing/processing device receives computer readable program instructions from the network and forwards the computer readable program instructions for storage in a computer readable storage medium in the respective computing/processing device.
Computer program instructions for carrying out operations of the present application may be assembly instructions, instruction Set Architecture (ISA) instructions, machine-related instructions, microcode, firmware instructions, state setting data, or source or object code written in any combination of one or more programming languages, including an object oriented programming language such as Smalltalk, c++ or the like and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The computer readable program instructions may be executed entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any kind of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or may be connected to an external computer (for example, through the Internet using an Internet service provider). In some embodiments, aspects of the present application are implemented by personalizing electronic circuitry, such as programmable logic circuitry, field Programmable Gate Arrays (FPGAs), or Programmable Logic Arrays (PLAs), with state information for computer readable program instructions, which can execute the computer readable program instructions.
Aspects of the present application are described herein with reference to flowchart illustrations and/or block diagrams of methods, apparatus and computer program products according to embodiments of the application. It will be understood that each block of the flowchart illustrations and/or block diagrams, and combinations of blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer-readable program instructions.
These computer readable program instructions may be provided to a processor 32 of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor 32 of the computer or other programmable data processing apparatus, create means for implementing the functions/acts specified in the flowchart and/or block diagram block or blocks. These computer readable program instructions may also be stored in a computer readable storage medium that can direct a computer, programmable data processing apparatus, and/or other devices to function in a particular manner, such that the computer readable medium having the instructions stored therein includes an article of manufacture including instructions which implement the function/act specified in the flowchart and/or block diagram block or blocks.
The computer readable program instructions may also be loaded onto a computer, other programmable data processing apparatus, or other devices to cause a series of operational steps to be performed on the computer, other programmable apparatus or other devices to produce a computer implemented process such that the instructions which execute on the computer, other programmable apparatus or other devices implement the functions/acts specified in the flowchart and/or block diagram block or blocks.
The flowcharts and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of instructions, which comprises one or more executable instructions for implementing the specified logical function(s). In some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
The foregoing has outlined rather broadly the more detailed description of embodiments of the application in order that the principles and embodiments of the application may be better understood, and in order that the present application may be better understood; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present application, the present description should not be construed as limiting the present application in view of the above.
Claims (13)
1. An alignment method for aligning a first wafer with a second wafer, comprising:
when the identification points on the second wafer are positioned in the alignment space of the alignment piece, acquiring a first deformation of the first wafer;
controlling the adjusting piece to deform by a second deformation amount according to the first deformation amount so as to enable the second wafer arranged on the adjusting piece to deform by a target deformation amount;
obtaining a first movement distance of the identification point on the second wafer according to the target deformation; and
and when the first movement distance is greater than a preset distance, controlling the alignment piece to move a second movement distance relative to the identification point according to the first movement distance, so that the identification point is positioned in the alignment space of the alignment piece.
2. The alignment method of claim 1, wherein obtaining the first deformation of the first wafer when the mark point on the second wafer is within the alignment pitch of the alignment member comprises:
acquiring an initial distance between the identification point on the second wafer and the alignment piece;
judging whether the identification point on the second wafer is positioned in the alignment space of the alignment piece according to the initial distance;
and when the identification point on the second wafer is positioned in the alignment space of the alignment piece, acquiring a first deformation of the first wafer.
3. The method of claim 1, wherein controlling the deformation of the tuning element by the second deformation amount according to the first deformation amount to deform the second wafer disposed on the tuning element by the target deformation amount comprises:
acquiring the initial deformation of the second wafer and the initial deformation of the adjusting piece;
and controlling the adjusting piece to deform by the second deformation amount according to the first deformation amount, the initial deformation amount of the second wafer and the initial deformation amount of the adjusting piece.
4. The alignment method of claim 1, wherein controlling the deformation of the adjustment member by the second deformation amount according to the first deformation amount to deform the second wafer provided on the adjustment member by the target deformation amount comprises:
When the second wafer is attached to the adjusting piece, controlling the adjusting piece to deform by the second deformation according to the first deformation so as to enable the second wafer arranged on the adjusting piece to deform by the target deformation; wherein the target deformation amount is equal to the second deformation amount.
5. The alignment method of claim 4, further comprising, before "when the second wafer is attached to the adjustment member, controlling the adjustment member to deform by a second deformation amount according to the first deformation amount so as to deform the second wafer provided on the adjustment member by a target deformation amount:
acquiring the gas quantity between the second wafer and the adjusting piece;
and judging whether the second wafer is attached to the adjusting piece according to the gas quantity.
6. The alignment method of claim 1, further comprising, before "controlling the adjustment member to deform by a second deformation amount according to the first deformation amount so as to deform a second wafer provided on the adjustment member by a target deformation amount";
acquiring an initial distance between the identification point on the second wafer and the alignment piece;
after "the adjusting member is controlled to deform by the second deformation amount according to the first deformation amount so as to deform the second wafer provided on the adjusting member by the target deformation amount", the method further includes:
Obtaining a first movement direction of the identification point according to the initial distance and the target deformation;
obtaining a second movement direction of the alignment member according to the first movement direction; wherein the first movement direction is the same as the second movement direction.
7. The alignment method of claim 6, wherein when the first movement distance is greater than a preset distance, controlling the alignment member to move a second movement distance relative to the mark point according to the first movement distance so that the mark point is located within the alignment pitch of the alignment member, further comprises:
controlling the adjusting piece to move relative to the first wafer so as to bond the surface of the second wafer arranged on the adjusting piece with the surface of the first wafer;
and controlling the alignment piece to return to an initial position according to the second movement distance and the second movement direction of the identification point.
8. The alignment method of claim 1, wherein controlling the alignment member to move a second movement distance relative to the mark point according to the first movement distance so that the mark point is located within the alignment pitch of the alignment member when the first movement distance is greater than a preset distance comprises:
Acquiring the deformation speed of the adjusting piece deformed by the second deformation amount;
according to the deformation speed, obtaining the movement speed of the alignment piece relative to the movement of the mark point;
when the first movement distance is greater than the preset distance, controlling the alignment member to move at the movement speed for a second movement distance relative to the identification point according to the first movement distance, so that the identification point is positioned in the alignment space of the alignment member; and when the adjusting piece finishes the deformation of the second deformation amount, the aligning piece moves to complete the second movement distance.
9. The alignment method of claim 8, wherein deriving a movement velocity of the alignment member relative to the marker point based on the deformation velocity comprises:
according to the deformation speed, obtaining the movement speed of the alignment piece relative to the movement of the mark point; wherein the deformation speed is equal to the movement speed.
10. The alignment method of claim 1, wherein controlling the alignment member to move a second movement distance relative to the identification point according to the first movement distance when the first movement distance is greater than a preset distance comprises:
When the first movement distance is greater than a preset distance, controlling the alignment piece to move a second movement distance relative to the identification point according to the first movement distance; wherein the first movement distance is equal to the second movement distance.
11. An alignment device, comprising:
an acquisition unit for acquiring a first deformation amount of a first wafer;
the control unit is used for controlling the adjusting piece to deform by a second deformation amount according to the first deformation amount so as to enable the second wafer arranged on the adjusting piece to deform by a target deformation amount;
the control unit is further used for obtaining a first movement distance of the identification point on the second wafer according to the target deformation;
when the movement distance is greater than a preset distance, the control unit is further used for controlling the alignment piece to move a second movement distance relative to the identification point so that the identification point is located in the alignment space of the alignment piece.
12. An alignment apparatus, wherein the alignment apparatus comprises a housing, an adjusting member, an alignment member, and a processor, wherein the housing has a receiving space therein, the adjusting member and the alignment member are disposed in the receiving space, the alignment member is used for aligning an identification point of a second wafer disposed on the adjusting member, the processor is disposed in the receiving space and electrically connects the adjusting member and the alignment member, and the processor is used for executing the alignment method according to any one of claims 1 to 10.
13. A computer storage medium storing a computer program comprising program instructions which, when executed by a processor, cause the processor to perform the alignment method of any of claims 1-10.
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| JP2017049456A (en) * | 2015-09-02 | 2017-03-09 | キヤノン株式会社 | Distortion detection method, exposure equipment, exposure method, and device manufacturing method |
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