CN112951899A - Annular MIS gate enhanced AlGaN channel heterojunction power device and preparation method thereof - Google Patents
Annular MIS gate enhanced AlGaN channel heterojunction power device and preparation method thereof Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 98
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000002090 nanochannel Substances 0.000 claims abstract description 43
- 238000005530 etching Methods 0.000 claims description 44
- 230000004888 barrier function Effects 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 238000009616 inductively coupled plasma Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 238000001259 photo etching Methods 0.000 claims description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 229910052593 corundum Inorganic materials 0.000 claims description 12
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- 230000006911 nucleation Effects 0.000 claims description 5
- 238000010899 nucleation Methods 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 description 14
- 230000008020 evaporation Effects 0.000 description 12
- 150000002739 metals Chemical class 0.000 description 12
- 238000005566 electron beam evaporation Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001883 metal evaporation Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005275 alloying Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention relates to an annular MIS gate enhanced AlGaN channel heterojunction power device and a preparation method thereof, wherein the power device comprises: a substrate; a source region portion disposed on one side on the substrate; a drain region portion disposed on the other side of the substrate and disposed opposite to the source region portion; the nano channels are arranged between the source region part and the drain region part at intervals and are suspended above the substrate; a source electrode disposed on the source region portion; a drain electrode disposed on the drain region portion; the dielectric layer is arranged between the source electrode and the drain electrode and covers two side surfaces of the nano channel vertical to the substrate and the top surface of the nano channel; and the gate electrode is positioned between the source electrode and the drain electrode and covers two side surfaces of the dielectric layer, which are vertical to the substrate, the top surface of the dielectric layer and the bottom surface of the nano channel. The annular MIS gate enhanced AlGaN channel heterojunction power device provided by the invention realizes the enhancement of the device and improves the breakdown voltage of the device.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to an annular MIS gate enhanced AlGaN channel heterojunction power device and a preparation method thereof.
Background
In recent years, GaN-based high electron mobility transistors have been studied with a great deal of attention in the field of power electronics because of their advantages such as high breakdown field, high electron mobility, and high thermal conductivity. Due to the characteristics of spontaneous polarization and piezoelectric polarization, the AlGaN/GaN HEMT is a natural depletion type device, which limits the application of GaN devices in the field of high-voltage switches.
At present, methods for realizing an enhanced power device are more, but under a large current condition, threshold voltage drift is still a problem of the enhanced power device due to the fact that heat resistance is increased to cause channel electrons of the device to transfer to a buffer layer.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides an annular MIS gate enhanced AlGaN channel heterojunction power device and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
the invention provides an annular MIS gate enhanced AlGaN channel heterojunction power device, which comprises:
a substrate;
a source region portion disposed on one side on the substrate;
a drain region portion disposed on the other side on the substrate and disposed opposite to the source region portion;
the nano channels are arranged between the source region part and the drain region part at intervals and are arranged above the substrate in a suspending way;
a source electrode disposed on the source region part;
a drain electrode disposed on the drain region portion;
the dielectric layer is arranged between the source electrode and the drain electrode and covers two side surfaces of the nano channel, which are vertical to the substrate, and the top surface of the nano channel;
and the gate electrode is positioned between the source electrode and the drain electrode and covers two side surfaces of the dielectric layer, which are vertical to the substrate, the top surface of the dielectric layer and the bottom surface of the nano channel.
In one embodiment of the present invention, each of the source region portion and the drain region portion includes an NbN layer, a GaN channel layer, and an AlGaN barrier layer, which are sequentially stacked from bottom to top.
In one embodiment of the present invention, the nanochannel includes the GaN channel layer and the AlGaN barrier layer stacked in this order from bottom to top.
In one embodiment of the invention, the substrate comprises a substrate base sheet, an AlN nucleating layer and a GaN buffer layer which are sequentially stacked from bottom to top, wherein the substrate base sheet is a Si substrate, a sapphire substrate or a SiC substrate.
In an embodiment of the present invention, the dielectric layer is made of Al2O3The thickness of the material is 10-30 nm.
In one embodiment of the invention, the thickness of the NbN layer is 20-100nm, the thickness of the GaN channel layer is 20-100nm, the thickness of the AlGaN barrier layer is 10-30nm, and the composition of Al is 15% -35%.
In one embodiment of the present invention, the width of the nanochannel is in the range of 50-300 nm.
The invention also provides a preparation method of the annular MIS gate enhanced AlGaN channel heterojunction power device, which comprises the following steps:
s1: selecting a substrate, and growing an AlN nucleating layer, a GaN buffer layer, an NbN layer, a GaN channel layer and an AlGaN barrier layer on the substrate in sequence;
s2: preparing a source electrode and a drain electrode on the AlGaN barrier layer;
s3: etching the AlGaN barrier layer and the GaN channel layer between the source electrode and the drain electrode to form a plurality of channels;
s4: depositing Al on the top layer and the side wall of the channel2O3A dielectric layer, removing Al at the channel interval by photoetching and etching process2O3Dielectric layer and Al outside the gate electrode region2O3A dielectric layer;
s5: removing NbN layers between the channels and below the channels to form AlGaN/GaN nanometer channels with suspended bottoms;
s6: depositing gate metal, covering with Al2O3A dielectric layer and the bottom surface of the AlGaN/GaN nano channel.
S7: and preparing metal interconnection on the electrode.
In an embodiment of the present invention, the S3 includes:
s31: photoetching masks of the active regions except the source region part and the drain region part by using an electron beam photoetching machine;
s32: and etching a deep groove in the plasma by using an inductively coupled plasma etching machine, etching the AlGaN barrier layer and the GaN channel layer between the source electrode and the drain electrode to form a plurality of channels, wherein the etching depth of the deep groove is 30-130nm, and the width of each channel is 50-300 nm.
In an embodiment of the present invention, the S5 includes: placing the device into an inductively coupled plasma etcher, and introducing XeF2And (3) gas is used for completely etching the NbN layers between the channels and below the channels, and the device is taken out to form the AlGaN/GaN nanometer channel with the suspended bottom.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention relates to an annular MIS gate enhanced AlGaN channel heterojunction power device which adopts an annular gate structure, and a gate electrode is arranged from four directionsThe channel electric field is modulated to realize an enhancement device and improve the breakdown voltage of the device, and Al is arranged in the gate electrode2O3The dielectric layer reduces the electric leakage of the gate electrode;
2. according to the annular MIS gate enhanced AlGaN channel heterojunction power device, the bottom gate electrode blocks a conductive path of channel electrons flowing to the buffer layer, so that the stability of the threshold voltage of the device in a large-current and thermal environment is ensured;
3. the invention relates to a preparation method of a ring MIS gate enhanced AlGaN channel heterojunction power device, which adopts NbN as a sacrificial layer and XeF2The NbN layer below the channel is removed through reaction with the AlGaN/GaN nano channel, and the AlGaN/GaN nano channel with the suspended bottom is formed.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a three-dimensional structural diagram of an annular MIS gate enhanced AlGaN channel heterojunction power device according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a nanochannel of another ring MIS gate enhanced AlGaN channel heterojunction power device provided by an embodiment of the present invention;
fig. 3 is a schematic diagram of a method for manufacturing an annular MIS gate enhanced AlGaN channel heterojunction power device according to an embodiment of the present invention;
fig. 4a to 4f are process diagrams of manufacturing an annular MIS gate enhanced AlGaN channel heterojunction power device according to an embodiment of the present invention.
Detailed Description
In order to further illustrate the technical means and effects of the present invention adopted to achieve the predetermined object, the following detailed description is provided with reference to the accompanying drawings and the detailed embodiments for a power device of a ring MIS gate enhanced AlGaN channel heterojunction and the method for manufacturing the same according to the present invention.
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. The technical means and effects of the present invention adopted to achieve the predetermined purpose can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are provided for reference and description only and are not used for limiting the technical scheme of the present invention.
Example one
Referring to fig. 1 and fig. 2 in combination, fig. 1 is a perspective structural view of an annular MIS gate enhanced AlGaN channel heterojunction power device according to an embodiment of the present invention; fig. 2 is a nanochannel cross-sectional view of another ring MIS gate-enhanced AlGaN channel heterojunction power device according to an embodiment of the present invention. As shown in the figure, the power device of the ring MIS gate enhanced AlGaN channel heterojunction of the present embodiment includes: the structure comprises a substrate 1, a source region part 2, a drain region part 3, a plurality of nano-channels 4, a source electrode 5, a drain electrode 6, a dielectric layer 7 and a gate electrode 8. Wherein the source region portion 2 is provided on one side on the substrate 1; a drain region portion 3 is provided on the other side on the substrate 1, and is disposed opposite to the source region portion 2; the nano channels 4 are arranged between the source region part 2 and the drain region part 3 at intervals and are arranged above the substrate 1 in a suspending way; the source electrode 5 is provided on the source region portion 2; a drain electrode 6 is provided on the drain region portion 3; the dielectric layer 7 is arranged between the source electrode 5 and the drain electrode 6 and covers two side surfaces of the nano channel 4 vertical to the substrate 1 and the top surface of the nano channel 4; the gate electrode 8 is located between the source electrode 5 and the drain electrode 6, and covers two side surfaces of the dielectric layer 7 perpendicular to the substrate 1, the top surface of the dielectric layer 7, and the bottom surface of the nano-channel 4.
In the present embodiment, as shown in fig. 1, the power device of ring MIS gate enhanced AlGaN channel heterojunction is provided with one nanochannel 4. The ring-shaped MIS gate enhanced AlGaN channel heterojunction power device as shown in FIG. 2 is provided with three nano-channels 4, and the bottoms of gate electrodes 8 are connected with each other.
Further, the source region portion 2 and the drain region portion 3 each include an NbN layer 9, a GaN channel layer 10, and an AlGaN barrier layer 11, which are stacked in this order from bottom to top. The nano-channel 4 comprises a GaN channel layer 10 and an AlGaN barrier layer 11 which are sequentially stacked from bottom to top. The GaN channel layer 10 and the AlGaN barrier layer 11 form a heterojunction.
In this embodiment, the NbN layer 9 has a thickness of 20 to 100nm, the GaN channel layer 10 has a thickness of 20 to 100nm, the AlGaN barrier layer 11 has a thickness of 10 to 30nm, and the composition of Al is 15 to 35%.
Furthermore, the dielectric layer 7 is made of Al2O3The thickness of the material is 10-30 nm.
Further, the substrate 1 includes a substrate base wafer 101, an AlN nucleation layer 102, and a GaN buffer layer 103, which are stacked in this order from bottom to top, wherein the substrate base wafer 101 is a Si substrate, a sapphire substrate, or a SiC substrate.
In this embodiment, the width of the nano-channel 4 is 50-300 nm.
In this embodiment, the gate electrode 8 is in an annular structure to surround the AlGaN/GaN nano channel from four aspects, so that the threshold voltage of the device is shifted forward, the control force of the gate electrode is significantly improved, and the gate electrode 8 modulates the channel electric field from four directions, thereby improving the breakdown voltage of the device while realizing enhancement of the device. In addition, the gate electrode at the bottom blocks a conductive path of channel electrons flowing to the buffer layer, and the stability of the threshold voltage of the device in a large-current and thermal environment is ensured. In addition, Al is provided in the gate electrode2O3And the dielectric layer reduces the leakage of the gate electrode.
Example two
The embodiment provides a method for manufacturing an annular MIS gate enhanced AlGaN channel heterojunction power device, and please refer to fig. 3, where fig. 3 is a schematic diagram of the method for manufacturing the annular MIS gate enhanced AlGaN channel heterojunction power device according to the embodiment of the present invention. As shown, the method includes:
s1: selecting a substrate, and growing an AlN nucleating layer, a GaN buffer layer, an NbN layer, a GaN channel layer and an AlGaN barrier layer on the substrate in sequence;
s2: preparing a source electrode and a drain electrode on the AlGaN barrier layer;
s3: etching the AlGaN barrier layer and the GaN channel layer between the source electrode and the drain electrode to form a plurality of channels;
s4: depositing Al on the top and side walls of the trench2O3A dielectric layer, removing Al at the channel interval by photoetching and etching process2O3Dielectric layer and Al outside the gate electrode region2O3A dielectric layer;
s5: removing NbN layers between the channels and below the channels to form AlGaN/GaN nanometer channels with suspended bottoms;
s6: depositing gate metal, covering with Al2O3A dielectric layer and the bottom surface of the AlGaN/GaN nano channel.
S7: and preparing metal interconnection on the electrode.
Specifically, step S3 includes:
s31: photoetching masks of the active regions except the source region part and the drain region part by using an electron beam photoetching machine;
s32: and etching a deep groove in the plasma by using an inductively coupled plasma etching machine, etching the AlGaN barrier layer and the GaN channel layer between the source electrode and the drain electrode to form a plurality of channels, wherein the etching depth of the deep groove is 30-130nm, and the width of the channel is 50-300 nm.
Specifically, step S5 includes: placing the device into an inductively coupled plasma etcher, and introducing XeF2And (3) gas is used for completely etching the NbN layers between the channels and below the channels, and the device is taken out to form the AlGaN/GaN nanometer channel with the suspended bottom.
Further, the following three specific embodiments are given to describe in detail the preparation method of the power device of the ring MIS gate enhanced AlGaN channel heterojunction in this embodiment. Referring to fig. 4a-4f, fig. 4a-4f are schematic diagrams illustrating a manufacturing process of a power device with a ring-shaped MIS gate enhanced AlGaN channel heterojunction according to an embodiment of the present invention.
(1) Preparing an annular MIS gate enhanced AlGaN channel heterojunction power device with the channel width of 50 nm:
step 1: selecting a Si substrate 001, and sequentially growing an AlN nucleation layer 002, a GaN buffer layer 003, an NbN layer 004, a GaN channel layer 005 and an AlGaN barrier layer 006 on the Si substrate 001, as shown in fig. 4 a.
The thickness of the GaN buffer layer 003 is 1 μm, the thickness of the NbN layer 004 is 20nm, the thickness of the GaN channel layer 005 is 20nm, the thickness of the AlGaN barrier layer 006 is 10nm, the Al component is 15%, and the GaN channel layer 005 and the AlGaN barrier layer 006 form an AlGaN/GaN heterojunction.
Step 2: source and drain electrodes (not shown) are prepared.
a) Exposing by using a Stepper photoetching machine to form a source and drain region mask pattern;
b) preparing source and drain ohmic contact metals by adopting an electron beam evaporation table, and stripping the metals after the evaporation of the source and drain ohmic contact metals is finished;
the source metal and the drain metal are respectively selected from Ti/Al/Ni/Au in sequence, the thickness of Ti is 20nm, the thickness of Al is 120nm, the thickness of Ni is 45nm, and the thickness of Au is 55 nm;
c) n at 870 deg.C2And carrying out rapid thermal annealing for 30s in the atmosphere, and alloying the source and drain ohmic contact metals to finish the preparation of the source electrode and the drain electrode.
And step 3: a plurality of channel structures are prepared.
a) Firstly, spin coating is carried out by a spin coater to obtain a photoresist mask; then, exposing by adopting an electron beam lithography machine to form a strip-shaped pattern;
b) the substrate with the mask is etched in Cl by an inductively coupled plasma etching machine2Etching deep groove structure in plasma to etch AlGaN barrier layer 006 and GaN channel layer 005, wherein the etching depth of the deep groove is 30nm, channel with width of 50nm is formed, and Cl is adopted2The plasma etch performs mesa isolation to a depth exceeding 100nm as shown in figure 4 b.
And 4, step 4: preparation of Al2O3A dielectric layer 007;
a) deposition of Al with a thickness of 10nm on a substrate by means of an ALD apparatus2O3A dielectric layer, as shown in FIG. 4 c;
b) exposing with Stepper photoetching machine to obtain photoresist mask, and etching with ICP etching machine in Cl2Al at the spacing of nano-channels under plasma conditions2O3Dielectric layer and Al outside the gate electrode region2O3And removing the dielectric layer.
And 5: removing NbN layer below the channel, placing the substrate in an ICP etching machine, and introducing XeF2And (4) etching the NbN layer just below the channel completely by using gas to form an AlGaN/GaN nano channel with a suspended bottom, and taking out the substrate as shown in figures 4d and 4 e.
Step 6: preparing a gate electrode 008, evaporating gate metal at an evaporation rate of 0.1nm/s by adopting an electron beam evaporation table, and stripping the metal after evaporation to obtain the gate electrode 008, wherein the gate electrode 008 covers Al2O3The dielectric layer and the bottom surface of the AlGaN/GaN nanochannel as shown in fig. 4 f.
Wherein, the gate metal is sequentially selected from Ni/Au, wherein the thickness of Ni is 20nm, and the thickness of Au is 200 nm.
And 7: passivation layers and open-hole interconnects (not shown) are prepared.
a) NH by adopting PECVD process3Is a source of N, SiH4The source is a Si source, and a SiN passivation layer with a thickness of 60nm is deposited on the uppermost AlGaN barrier layer 006;
b) in CF using an inductively coupled plasma etcher4Etching and removing the SiN layer in the electrode area in the plasma to form an interconnection opening;
c) and (3) carrying out lead electrode metal evaporation on the substrate with the mask manufactured by adopting an electron beam evaporation table at an evaporation rate of 0.3nm/s, and finally stripping after the lead electrode metal evaporation is finished to obtain the complete lead electrode. Wherein, the metal is Ti/Au, the thickness of Ti is 20nm, and the thickness of Au is 200 nm.
(2) Preparing an annular MIS gate enhanced AlGaN channel heterojunction power device with the channel width of 175 nm:
step 1: selecting a Si substrate 001, and sequentially growing an AlN nucleation layer 002, a GaN buffer layer 003, an NbN layer 004, a GaN channel layer 005 and an AlGaN barrier layer 006 on the Si substrate 001, as shown in fig. 4 a.
The thickness of the GaN buffer layer 003 is 3 μm, the thickness of the NbN layer 004 is 60nm, the thickness of the GaN channel layer 005 is 60nm, the thickness of the AlGaN barrier layer 006 is 20nm, the Al component is 55%, and the GaN channel layer 005 and the AlGaN barrier layer 006 form an AlGaN/GaN heterojunction.
Step 2: source and drain electrodes (not shown) are prepared.
a) Exposing by using a Stepper photoetching machine to form a source and drain region mask pattern;
b) preparing source and drain ohmic contact metals by adopting an electron beam evaporation table, and stripping the metals after the evaporation of the source and drain ohmic contact metals is finished;
the source metal and the drain metal are respectively selected from Ti/Al/Ni/Au in sequence, the thickness of Ti is 20nm, the thickness of Al is 120nm, the thickness of Ni is 45nm, and the thickness of Au is 55 nm;
c) n at 870 deg.C2And carrying out rapid thermal annealing for 30s in the atmosphere, and alloying the source and drain ohmic contact metals to finish the preparation of the source electrode and the drain electrode.
And step 3: a plurality of channel structures are prepared.
a) Firstly, spin coating is carried out by a spin coater to obtain a photoresist mask; then, exposing by adopting an electron beam lithography machine to form a strip-shaped pattern;
b) the substrate with the mask is etched in Cl by an inductively coupled plasma etching machine2Etching deep groove structure in plasma to etch AlGaN barrier layer 006 and GaN channel layer 005, wherein the etching depth of the deep groove is 80nm, channel with width of 175nm is formed, and Cl is adopted2The plasma etch performs mesa isolation to a depth in excess of 200nm, as shown in figure 4 b.
And 4, step 4: preparation of Al2O3A dielectric layer 007;
a) deposition of Al with a thickness of 20nm on a substrate by means of an ALD apparatus2O3A dielectric layer, as shown in FIG. 4 c;
b) exposing with Stepper photoetching machine to obtain photoresist mask, and etching with ICP etching machine in Cl2Al at the spacing of nano-channels under plasma conditions2O3Dielectric layer and Al outside the gate electrode region2O3And removing the dielectric layer.
And 5: removing NbN layer below the channel, placing the substrate into an ICP etching machine, and introducingXeF2And (4) etching the NbN layer just below the channel completely by using gas to form an AlGaN/GaN nano channel with a suspended bottom, and taking out the substrate as shown in figures 4d and 4 e.
Step 6: preparing a gate electrode 008, evaporating gate metal at an evaporation rate of 0.1nm/s by adopting an electron beam evaporation table, and stripping the metal after evaporation to obtain the gate electrode 008, wherein the gate electrode 008 covers Al2O3The dielectric layer and the bottom surface of the AlGaN/GaN nanochannel as shown in fig. 4 f.
Wherein, the gate metal is sequentially selected from Ni/Au, wherein the thickness of Ni is 20nm, and the thickness of Au is 200 nm.
And 7: passivation layers and open-hole interconnects (not shown) are prepared.
a) NH by adopting PECVD process3Is a source of N, SiH4The source is a Si source, and a SiN passivation layer with a thickness of 60nm is deposited on the uppermost AlGaN barrier layer 006;
b) in CF using an inductively coupled plasma etcher4Etching and removing the SiN layer in the electrode area in the plasma to form an interconnection opening;
c) and (3) carrying out lead electrode metal evaporation on the substrate with the mask manufactured by adopting an electron beam evaporation table at an evaporation rate of 0.3nm/s, and finally stripping after the lead electrode metal evaporation is finished to obtain the complete lead electrode. Wherein, the metal is Ti/Au, the thickness of Ti is 20nm, and the thickness of Au is 200 nm.
(3) Preparing an annular MIS gate enhanced AlGaN channel heterojunction power device with the channel width of 300 nm:
step 1: selecting a Si substrate 001, and sequentially growing an AlN nucleation layer 002, a GaN buffer layer 003, an NbN layer 004, a GaN channel layer 005 and an AlGaN barrier layer 006 on the Si substrate 001, as shown in fig. 4 a.
The thickness of the GaN buffer layer 003 is 5 μm, the thickness of the NbN layer 004 is 100nm, the thickness of the GaN channel layer 005 is 100nm, the thickness of the AlGaN barrier layer 006 is 30nm, the Al component is 55%, and the GaN channel layer 005 and the AlGaN barrier layer 006 form an AlGaN/GaN heterojunction.
Step 2: source and drain electrodes (not shown) are prepared.
a) Exposing by using a Stepper photoetching machine to form a source and drain region mask pattern;
b) preparing source and drain ohmic contact metals by adopting an electron beam evaporation table, and stripping the metals after the evaporation of the source and drain ohmic contact metals is finished;
the source metal and the drain metal are respectively selected from Ti/Al/Ni/Au in sequence, the thickness of Ti is 20nm, the thickness of Al is 120nm, the thickness of Ni is 45nm, and the thickness of Au is 55 nm;
c) n at 870 deg.C2And carrying out rapid thermal annealing for 30s in the atmosphere, and alloying the source and drain ohmic contact metals to finish the preparation of the source electrode and the drain electrode.
And step 3: a plurality of channel structures are prepared.
a) Firstly, spin coating is carried out by a spin coater to obtain a photoresist mask; then, exposing by adopting an electron beam lithography machine to form a strip-shaped pattern;
b) the substrate with the mask is etched in Cl by an inductively coupled plasma etching machine2Etching deep groove structure in plasma to etch AlGaN barrier layer 006 and GaN channel layer 005 to obtain channel with width of 300nm and depth of 130nm, and using Cl2The plasma etch performs mesa isolation to a depth in excess of 300nm, as shown in figure 4 b.
And 4, step 4: preparation of Al2O3A dielectric layer 007;
a) deposition of Al on a substrate with a thickness of 30nm by means of an ALD apparatus2O3A dielectric layer, as shown in FIG. 4 c;
b) exposing with Stepper photoetching machine to obtain photoresist mask, and etching with ICP etching machine in Cl2Al at the spacing of nano-channels under plasma conditions2O3Dielectric layer and Al outside the gate electrode region2O3And removing the dielectric layer.
And 5: removing NbN layer below the channel, placing the substrate in an ICP etching machine, and introducing XeF2And (4) etching the NbN layer just below the channel completely by using gas to form an AlGaN/GaN nano channel with a suspended bottom, and taking out the substrate as shown in figures 4d and 4 e.
Step 6: preparation ofAnd a gate electrode 008, wherein the gate metal is evaporated at an evaporation rate of 0.1nm/s by adopting an electron beam evaporation table, and metal stripping is carried out after evaporation is finished to obtain the gate electrode 008, wherein the gate electrode 008 covers Al2O3The dielectric layer and the bottom surface of the AlGaN/GaN nanochannel as shown in fig. 4 f.
Wherein, the gate metal is sequentially selected from Ni/Au, wherein the thickness of Ni is 20nm, and the thickness of Au is 200 nm.
And 7: passivation layers and open-hole interconnects (not shown) are prepared.
a) NH by adopting PECVD process3Is a source of N, SiH4The source is a Si source, and a SiN passivation layer with a thickness of 60nm is deposited on the uppermost AlGaN barrier layer 006;
b) in CF using an inductively coupled plasma etcher4Etching and removing the SiN layer in the electrode area in the plasma to form an interconnection opening;
c) and (3) carrying out lead electrode metal evaporation on the substrate with the mask manufactured by adopting an electron beam evaporation table at an evaporation rate of 0.3nm/s, and finally stripping after the lead electrode metal evaporation is finished to obtain the complete lead electrode. Wherein, the metal is Ti/Au, the thickness of Ti is 20nm, and the thickness of Au is 200 nm.
The preparation method of the ring-shaped MIS gate enhancement type AlGaN channel heterojunction power device adopts NbN as a sacrificial layer and XeF2The NbN layer below the channel is removed through reaction with the AlGaN/GaN nano channel, and the AlGaN/GaN nano channel with the suspended bottom is formed.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of additional like elements in the article or device comprising the element. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The directional or positional relationships indicated by "upper", "lower", "left", "right", etc., are based on the directional or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. An annular MIS gate enhanced AlGaN channel heterojunction power device, comprising:
a substrate;
a source region portion disposed on one side on the substrate;
a drain region portion disposed on the other side on the substrate and disposed opposite to the source region portion;
the nano channels are arranged between the source region part and the drain region part at intervals and are arranged above the substrate in a suspending way;
a source electrode disposed on the source region part;
a drain electrode disposed on the drain region portion;
the dielectric layer is arranged between the source electrode and the drain electrode and covers two side surfaces of the nano channel, which are vertical to the substrate, and the top surface of the nano channel;
and the gate electrode is positioned between the source electrode and the drain electrode and covers two side surfaces of the dielectric layer, which are vertical to the substrate, the top surface of the dielectric layer and the bottom surface of the nano channel.
2. The ring-shaped MIS gate enhanced AlGaN channel heterojunction power device according to claim 1, wherein the source region portion and the drain region portion each comprise a NbN layer, a GaN channel layer, and an AlGaN barrier layer, which are stacked in this order from bottom to top.
3. The toroidal MIS gate-enhanced AlGaN channel heterojunction power device according to claim 1, wherein said nanochannel comprises said GaN channel layer and said AlGaN barrier layer stacked in this order from bottom to top.
4. The ring-shaped MIS gate-enhanced AlGaN channel heterojunction power device of claim 1, wherein the substrate comprises a substrate base, an AlN nucleation layer and a GaN buffer layer which are sequentially stacked from bottom to top, wherein the substrate base is a Si substrate, a sapphire substrate or a SiC substrate.
5. The ring-shaped MIS gate-enhanced AlGaN channel heterojunction power device as claimed in claim 1, wherein the dielectric layer is made of Al2O3The thickness of the material is 10-30 nm.
6. The toroidal MIS gate-enhanced AlGaN channel heterojunction power device as claimed in claim 2, wherein the NbN layer has a thickness of 20-100nm, the GaN channel layer has a thickness of 20-100nm, the AlGaN barrier layer has a thickness of 10-30nm, and the Al component is 15-35%.
7. The toroidal MIS gate enhanced AlGaN channel heterojunction power device according to claim 1, wherein the width of the nanochannel is in the range of 50-300 nm.
8. A preparation method of an annular MIS gate enhanced AlGaN channel heterojunction power device is characterized by comprising the following steps:
s1: selecting a substrate, and growing an AlN nucleating layer, a GaN buffer layer, an NbN layer, a GaN channel layer and an AlGaN barrier layer on the substrate in sequence;
s2: preparing a source electrode and a drain electrode on the AlGaN barrier layer;
s3: etching the AlGaN barrier layer and the GaN channel layer between the source electrode and the drain electrode to form a plurality of channels;
s4: depositing Al on the top layer and the side wall of the channel2O3A dielectric layer, removing Al at the channel interval by photoetching and etching process2O3Dielectric layer and Al outside the gate electrode region2O3A dielectric layer;
s5: removing NbN layers between the channels and below the channels to form AlGaN/GaN nanometer channels with suspended bottoms;
s6: depositing gate metal, covering with Al2O3The bottom surfaces of the medium layer and the AlGaN/GaN nanometer channel;
s7: and preparing metal interconnection on the electrode.
9. The method according to claim 8, wherein the S3 includes:
s31: photoetching masks of the active regions except the source region part and the drain region part by using an electron beam photoetching machine;
s32: and etching a deep groove in the plasma by using an inductively coupled plasma etching machine, etching the AlGaN barrier layer and the GaN channel layer between the source electrode and the drain electrode to form a plurality of channels, wherein the etching depth of the deep groove is 30-130nm, and the width of each channel is 50-300 nm.
10. The method according to claim 8, wherein the S5 includes: placing the device into an inductively coupled plasma etcher, and introducing XeF2And (3) gas is used for completely etching the NbN layers between the channels and below the channels, and the device is taken out to form the AlGaN/GaN nanometer channel with the suspended bottom.
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