CN112904499A - Semiconductor laser and planar optical waveguide coupling structure, optical path system and manufacturing method - Google Patents
Semiconductor laser and planar optical waveguide coupling structure, optical path system and manufacturing method Download PDFInfo
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- CN112904499A CN112904499A CN202110121434.7A CN202110121434A CN112904499A CN 112904499 A CN112904499 A CN 112904499A CN 202110121434 A CN202110121434 A CN 202110121434A CN 112904499 A CN112904499 A CN 112904499A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
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Abstract
The invention discloses a coupling structure of a semiconductor laser and a planar optical waveguide, an optical path system and a manufacturing method, and relates to the technical field of semiconductor lasers. The coupling structure comprises an input waveguide structure and a parabolic shaping structure, wherein the input waveguide structure is positioned at one end of the parabolic shaping structure, and the waveguide structure of the parabolic shaping structure is parabolic; the input waveguide structure is tightly attached to the output end of the semiconductor laser, the size of the input waveguide structure is matched with the mode spot of the semiconductor laser, and one end, far away from the input waveguide structure, of the parabolic shaping structure is connected with the optical waveguide transmission structure. The coupling structure provided by the invention is a structure for directly coupling the semiconductor laser and the planar optical waveguide, and compared with a light path coupling structure of a laser-lens-planar optical waveguide device, the coupling structure reduces elements such as lenses and the like, has the advantages of simple light path structure, high coupling efficiency, simple assembly process and more advantageous cost, and is suitable for batch production.
Description
Technical Field
The invention relates to the technical field of semiconductor laser, in particular to a coupling structure of a semiconductor laser and a planar optical waveguide, an optical path system and a manufacturing method.
Background
With the rapid development of 5G optical communication and data centers and the large demand of services such as cloud computing and cloud storage, the demand of high-speed optical modules in the market is increasing. In order to expand the bandwidth and increase the network capacity, Wavelength Division Multiplexing (WDM) technology has been widely used in optical modules. The optical transmitting module based on WDM technology mainly includes: n semiconductor lasers, N coupling lenses, a planar optical waveguide multiplexing device, isolators (1 or N), an optical fiber connector, an output port and the like. Among them, the optical path coupling between the semiconductor laser and the planar optical waveguide multiplexing device is the most critical assembly process. Because the divergence angle of the semiconductor laser is large, in order to improve the coupling efficiency, light spots output by the semiconductor laser need to be focused by the coupling lens and then enter the planar optical waveguide multiplexing device, so that the optical path system is large in size, complex in structure and complex in optical module assembly process.
In order to reduce the complexity of an optical path system and an assembly process, the semiconductor laser can be directly coupled with the planar optical waveguide multiplexing device without focusing by a coupling lens, the optical path coupling structure is simple, the size is small, the assembly process is simple, the cost is more advantageous, and the optical path coupling structure is suitable for batch production. However, coupling efficiency is not high due to the mismatch of the mode spot size and the effective refractive index between the semiconductor laser and the planar optical waveguide multiplexing device.
Disclosure of Invention
The invention aims to provide a coupling structure of a semiconductor laser and a planar optical waveguide, an optical path system and a manufacturing method, which are used for reducing the complexity of the optical path system and the assembly process of an optical module. Compared with the existing laser-lens-planar optical waveguide device coupling, the optical path system only comprises the laser and the planar optical waveguide device, has the advantages of simple optical path coupling structure, small volume, simple assembly process and more advantageous cost, and is suitable for mass production.
The invention provides a coupling structure of a semiconductor laser and a planar optical waveguide, which comprises an input waveguide structure and a parabolic shaping structure, wherein the input waveguide structure is positioned at one end of the parabolic shaping structure, and the waveguide structure of the parabolic shaping structure is parabolic;
the input waveguide structure is tightly attached to the output end of the semiconductor laser, the size of the input waveguide structure is matched with the mode spot of the semiconductor laser as much as possible, one end, far away from the input waveguide structure, of the parabolic shaping structure is connected with the optical waveguide transmission structure, and the optical waveguide transmission structure is connected with the core layer of the planar optical waveguide.
The invention also provides an optical path system applying the coupling structure, which comprises a semiconductor laser, the coupling structure, an optical waveguide transmission structure and a planar optical waveguide, wherein one end of the coupling structure is tightly attached to the output end of the semiconductor laser, and the other end of the coupling structure is connected with the core layer of the planar optical waveguide through the optical waveguide transmission structure.
Preferably, the waveguide width and thickness of the core layer of the planar optical waveguide are the same as those of the waveguide connected with the parabolic shaping structure; or
The waveguide width and the thickness of the core layer of the planar optical waveguide are different from those of the waveguide connected with the parabolic shaping structure, and the core layer of the planar optical waveguide is coupled with the parabolic shaping structure through a tapered waveguide structure.
Preferably, the waveguide of the tapered waveguide structure is linear, parabolic or exponential.
Preferably, the optical waveguide transmission structure supports only single-mode transmission.
Preferably, the coupling structure and the optical waveguide transmission structure are monolithically integrated structures based on the same substrate.
Preferably, the coupling structure is a planar optical waveguide structure based on silicon dioxide or silicon nitride.
Preferably, the optical waveguide transmission structure is a planar optical waveguide structure based on silicon dioxide or silicon nitride.
Preferably, the semiconductor laser is mounted on a ceramic or CuW heat sink.
The invention also provides a method for manufacturing the optical path system, which comprises the following steps:
firstly, simulating the mode characteristic of an output light spot of a semiconductor laser, and according to the refractive index characteristics of a core layer and a cladding layer of a planar optical waveguide, simulating and designing an optical waveguide transmission structure to enable the optical waveguide transmission structure to only support single-mode transmission;
secondly, matching the width and the thickness of the input waveguide structure with a far-field light spot output by a laser through simulation, and shaping the light spot by using a parabolic shaping structure;
thirdly, finishing the process manufacturing of the planar optical waveguide according to the design structure of the planar optical waveguide;
and finally, performing active coupling on the semiconductor laser and the planar optical waveguide through a coupling structure to complete the manufacture of the optical path system.
The semiconductor laser and planar optical waveguide coupling structure, the optical path system and the manufacturing method have the following advantages:
1. the coupling structure provided by the invention is a structure for directly coupling the semiconductor laser and the planar optical waveguide. Compared with the optical path coupling structure of a laser-lens-planar optical waveguide device, the coupling structure has the advantages of less introduction of elements such as lenses and the like, simple optical path structure, small volume, simple assembly process and more advantages in cost, is suitable for batch production and is particularly suitable for preparation of multi-path light emitting modules;
2. the coupling structure of the present invention includes an input waveguide structure and a parabolic shaping structure. Compared with the output port of a semiconductor laser and a beam shaping structure based on other materials, the coupling structure is simple, the process is simple, the realization is easy, and the core layer of the planar optical waveguide are integrated based on the same cladding without introducing extra material media;
3. the coupling efficiency of the coupling structure can reach or even exceed that of a lens focusing light path.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is an optical circuit system including a semiconductor laser and a planar optical waveguide coupling structure;
FIG. 2 is an X-Y, X-Z, Y-Z view of the coupling structure;
FIG. 3 is an N-way optical path system;
FIG. 4 is an output spot of a semiconductor laser;
FIG. 5 is an output spot of a planar optical waveguide;
FIG. 6 is the result of the variation of the coupling-out power with the length of the parabolic shaping structure;
fig. 7 shows simulation results of mode field transmission of the coupling structure of the semiconductor laser and the planar optical waveguide in X-Z and Y-Z planes.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, 2 and 3, the present invention provides a coupling structure of a semiconductor laser and a planar optical waveguide, wherein the coupling structure includes an input waveguide structure and a parabolic shaping structure, the input waveguide structure is located at one end of the parabolic shaping structure, and the waveguide structure of the parabolic shaping structure is parabolic, so as to increase mode matching with the semiconductor laser, realize shaping effect on an input light spot, and improve coupling efficiency. The input waveguide structure is closely attached to the output end of the semiconductor laser, and the size of the input waveguide structure is matched with the mode spot of the semiconductor laser. One end of the parabolic shaping structure, which is far away from the input waveguide structure, is connected with an optical waveguide transmission structure in the planar optical waveguide, and the optical waveguide transmission structure is tightly connected with a core layer of the planar optical waveguide.
In this embodiment, the thickness of the input waveguide structure in the Z direction of the waveguide transmission direction, i.e. the thickness in the laser propagation direction, is zero, i.e. the input waveguide structure is an end face of a parabolic shaping structure. The waveguide structures of the parabolic shaping structure in the X-Z direction and the Y-Z direction are both parabolic.
Based on the coupling structure, the invention also provides an optical path system which comprises a semiconductor laser, a coupling structure and a planar optical waveguide, wherein one end of the coupling structure is tightly attached to the output end of the semiconductor laser, and the other end of the coupling structure is connected with the core layer of the planar optical waveguide through an optical waveguide transmission structure.
In this embodiment, the waveguide width and thickness of the optical waveguide transmission structure are the same as or different from the waveguide width and thickness connected to the parabolic shaping structure. If different, a tapered waveguide structure needs to be introduced between the two, and the waveguide of the tapered waveguide structure can be designed into a linear type, a parabolic type, an exponential type and the like.
The optical waveguide transmission structure only supports single-mode transmission and is used for realizing transmission of single-mode light beams.
The semiconductor laser is a Gaussian single-mode semiconductor laser with a far-field divergence angle of 10-40 degrees in the X direction and 10-45 degrees in the Y direction.
The coupling structure is a planar optical waveguide structure based on materials such as silicon dioxide and silicon nitride.
The optical waveguide transmission structure is a planar optical waveguide structure based on materials such as silicon dioxide and silicon nitride.
The coupling structure and the optical waveguide transmission structure are monolithically integrated structures based on the same substrate.
The parabolic shaping structure of the coupling structure can realize shaping of light spots with large input divergence angles, so that more light beams are converged in a core layer of the planar optical waveguide, and transmission loss is reduced.
The semiconductor laser is attached to heat sinks with good heat dissipation characteristics such as ceramics and CuW.
The coupling gap between the semiconductor laser and the coupling structure is zero or a small coupling distance close to zero, in order to improve the coupling efficiency.
The optical path system can be applied to a high-speed single-channel optical module or a parallel optical module for 40G, 100G and 400G optical transmission.
Based on the optical path system, the invention also provides a manufacturing method of the optical path system, which comprises the following steps:
firstly, simulating the mode characteristics of the output light spot of the semiconductor laser, and according to the characteristics of the refractive indexes of a core layer and a cladding layer of the planar optical waveguide, simulating and designing an optical waveguide transmission structure to enable the optical waveguide transmission structure to only support single-mode transmission.
Secondly, a coupling structure is designed according to the output light spot of the semiconductor laser, wherein the design principle of the width and the thickness of the input waveguide structure is matched with the far-field light spot output by the laser as much as possible through simulation, and the design principle of the parabolic shaping structure is used for shaping the light spot, so that more light beams are converged in a core layer of the planar optical waveguide, and the transmission loss is reduced.
And thirdly, finishing the process manufacturing of the planar optical waveguide according to the design structure of the planar optical waveguide. The semiconductor laser is mounted on a heat sink with good heat dissipation characteristics such as ceramic and CuW, and the output port of the semiconductor laser preferably protrudes a part of the edge of the heat sink for coupling.
And finally, performing active coupling on the semiconductor laser and the planar optical waveguide through a coupling structure to complete the manufacture of the semiconductor laser-planar optical waveguide component. The optical path system of the invention can be applied to the preparation of N light emitting modules, as shown in fig. 3, the complexity of the whole optical path system is greatly reduced due to the introduction of less N lenses, the assembly process is greatly simplified, the cost is correspondingly reduced, and the optical path system is suitable for the batch production of optical modules.
The invention is further described below with reference to specific examples.
In this embodiment, the emission wavelength of a semiconductor laser is 1.3 μm, and a planar optical waveguide is made of a silica material.
Firstly, the output light spots of a semiconductor laser and a planar optical waveguide structure are simulated, the output light spot of the semiconductor laser is shown in fig. 4, the refractive index difference between a core layer and a cladding layer of the planar optical waveguide is 0.02, the width and the thickness of the optical waveguide transmission structure are designed to be 8 μm, and the output light spot is shown in fig. 5.
And secondly, performing simulation design on the coupling structure, wherein the width and the height of the input waveguide structure are designed to be 1.4 mu m, and ensuring that the output mode of the input waveguide structure is matched with the semiconductor laser as much as possible. Next, a parabolic shaping structure is designed, and the width and thickness of a waveguide connected to the optical waveguide transmission structure are designed to be the same as those of the optical waveguide transmission structure. The result of the simulated change of the coupling output power along with the length of the parabolic shaping structure is shown in fig. 6, the optimal length is 60 μm, the maximum coupling optical power is 65%, and the optical path coupling efficiency of the semiconductor laser-coupling lens-planar optical waveguide is achieved or even superior. The simulation results of mode field transmission of the coupling structure of the semiconductor laser and the planar optical waveguide in the X-Z and Y-Z planes are shown in fig. 7.
And finally, carrying out process manufacturing on the semiconductor laser and the planar optical waveguide component, wherein the coupling efficiency of the coupling structure adopting the simulation design is up to or even superior to that of a lens optical path.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. The semiconductor laser and planar optical waveguide coupling structure is characterized by comprising an input waveguide structure and a parabolic shaping structure, wherein the input waveguide structure is positioned at one end of the parabolic shaping structure, and the waveguide structure of the parabolic shaping structure is parabolic;
the input waveguide structure is tightly attached to the output end of the semiconductor laser, the size of the input waveguide structure is matched with the mode spot of the semiconductor laser as much as possible, one end, far away from the input waveguide structure, of the parabolic shaping structure is connected with the optical waveguide transmission structure, and the optical waveguide transmission structure is connected with the core layer of the planar optical waveguide.
2. An optical path system using the coupling structure of the semiconductor laser and the planar optical waveguide of claim 1, comprising a semiconductor laser, a coupling structure, an optical waveguide transmission structure and a planar optical waveguide, wherein one end of the coupling structure is closely attached to the output end of the semiconductor laser, and the other end of the coupling structure is connected to the core layer of the planar optical waveguide through the optical waveguide transmission structure.
3. The optical circuit system of claim 2, wherein the waveguide width and thickness of the core layer of the planar optical waveguide are the same as those of the waveguide connected to the parabolic shaping structure; or
The waveguide width and the thickness of the core layer of the planar optical waveguide are different from those of the waveguide connected with the parabolic shaping structure, and the core layer of the planar optical waveguide is coupled with the parabolic shaping structure through a tapered waveguide structure.
4. The optical path system of claim 3, wherein the waveguide of the tapered waveguide structure is linear, parabolic, or exponential.
5. The optical circuit system of claim 2 wherein the optical waveguide transmission structure supports only single mode transmission.
6. The optical circuit system of claim 2, wherein the coupling structure and the optical waveguide transmission structure are monolithically integrated structures based on a same substrate.
7. The optical circuit system of claim 2, wherein the coupling structure is a silicon dioxide or silicon nitride based planar optical waveguide structure.
8. The optical circuit system of claim 2, wherein the optical waveguide transmission structure is a silicon dioxide or silicon nitride based planar optical waveguide structure.
9. The optical path system of claim 2, wherein the semiconductor laser is mounted on a ceramic or CuW heat sink.
10. The method for manufacturing an optical path system according to any one of claims 2 to 9, comprising the steps of:
firstly, simulating the mode characteristic of an output light spot of a semiconductor laser, and according to the refractive index characteristics of a core layer and a cladding layer of a planar optical waveguide, simulating and designing an optical waveguide transmission structure to enable the optical waveguide transmission structure to only support single-mode transmission;
secondly, matching the width and the thickness of the input waveguide structure with a far-field light spot output by a laser through simulation, and shaping the light spot by using a parabolic shaping structure;
thirdly, finishing the process manufacturing of the planar optical waveguide according to the design structure of the planar optical waveguide;
and finally, performing active coupling on the semiconductor laser and the planar optical waveguide through a coupling structure to complete the manufacture of the optical path system.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113900181A (en) * | 2021-09-22 | 2022-01-07 | 南京理工大学 | Waveguide edge integrated coupler and preparation method thereof |
| CN114114537A (en) * | 2021-12-08 | 2022-03-01 | 南通大学 | Design method of ultra-compact adiabatic tapered waveguide |
| CN114706164A (en) * | 2022-03-31 | 2022-07-05 | 深圳市速腾聚创科技有限公司 | Waveguide conversion chip and laser radar |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101907754A (en) * | 2010-07-09 | 2010-12-08 | 浙江大学 | Waveguide coupler chip for semiconductor laser |
| CN105759374A (en) * | 2016-05-17 | 2016-07-13 | 武汉电信器件有限公司 | Planar optical waveguide structure and coupling structure and coupling method thereof |
| CN111580216A (en) * | 2020-06-11 | 2020-08-25 | 山东明灿光电科技有限公司 | Planar optical waveguide chip and waveguide type single-mode fiber laser |
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2021
- 2021-01-28 CN CN202110121434.7A patent/CN112904499A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101907754A (en) * | 2010-07-09 | 2010-12-08 | 浙江大学 | Waveguide coupler chip for semiconductor laser |
| CN105759374A (en) * | 2016-05-17 | 2016-07-13 | 武汉电信器件有限公司 | Planar optical waveguide structure and coupling structure and coupling method thereof |
| CN111580216A (en) * | 2020-06-11 | 2020-08-25 | 山东明灿光电科技有限公司 | Planar optical waveguide chip and waveguide type single-mode fiber laser |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113900181A (en) * | 2021-09-22 | 2022-01-07 | 南京理工大学 | Waveguide edge integrated coupler and preparation method thereof |
| CN114114537A (en) * | 2021-12-08 | 2022-03-01 | 南通大学 | Design method of ultra-compact adiabatic tapered waveguide |
| CN114706164A (en) * | 2022-03-31 | 2022-07-05 | 深圳市速腾聚创科技有限公司 | Waveguide conversion chip and laser radar |
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Application publication date: 20210604 |