CN112886390A - Multi-group symmetrical array high-power optical fiber coupling semiconductor laser packaging structure and method - Google Patents
Multi-group symmetrical array high-power optical fiber coupling semiconductor laser packaging structure and method Download PDFInfo
- Publication number
- CN112886390A CN112886390A CN202010462594.3A CN202010462594A CN112886390A CN 112886390 A CN112886390 A CN 112886390A CN 202010462594 A CN202010462594 A CN 202010462594A CN 112886390 A CN112886390 A CN 112886390A
- Authority
- CN
- China
- Prior art keywords
- laser
- type single
- reflector
- collimating lens
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention relates to a packaging structure and a packaging method for a multi-group symmetrical array high-power optical fiber coupling semiconductor laser, belonging to the technical field of semiconductor laser packaging. The invention avoids the problem of mutual interference possibly caused by space beam combination of the high-power single-group laser, obviously improves the quality of a light source, and simultaneously avoids the problem of uneven heat dissipation of the high-power single-group laser.
Description
Technical Field
The invention relates to a packaging structure and a packaging method for a plurality of groups of symmetrical-array high-power optical fiber coupling semiconductor lasers, and belongs to the technical field of semiconductor laser packaging.
Background
After decades of development, semiconductor lasers are more and more well known to the society and have been applied in multiple fields, the photoelectric conversion efficiency of semiconductor lasers is more than 60%, which is far higher than that of other similar products, the energy consumption is low, the heat accumulation in devices is less, the service life is long, the collimation is good, the illumination distance is long, and the like, and the semiconductor lasers are more and more widely applied as a new technology in the similar industries of the society. Semiconductor lasers have various advantages, which make them increasingly receive wide attention from all social circles. At present, a single group of high-power optical fiber coupling semiconductor laser is commonly used in the market, the size of the single group of high-power optical fiber coupling semiconductor laser is limited by the size of a space structure, the possibility of mutual interference in the laser transmission process exists, as a chip is arranged on a step with a certain height difference and is far away from the heat dissipation bottom, the thermal resistance is relatively large, the heat conduction efficiency is low, and the processing precision requirements on the step and a reflector are higher due to the multiple reflector types, although the single structure is relatively simple, the assembly requirements on the laser are very high, the adjustment is complex, and the size is relatively large.
Chinese patent document CN100576666 discloses a high-power light beam coupling semiconductor laser, which includes two semiconductor lasers with the same wavelength and the same polarization state and a beam expanding focusing device, wherein the two semiconductor lasers are oppositely arranged on the same optical axis, a right-angle polarization coupling prism with a polarization film plated on an inclined surface thereof is arranged on a light path between the two semiconductor lasers, a quarter-wave plate is attached to a right-angle surface on one side of the right-angle polarization coupling prism, an outgoing light beam of one laser is transmitted to the beam expanding focusing device after being reflected by the right-angle polarization coupling prism, and an outgoing light beam of the other laser is coupled with the reflected light beam into a beam for transmission after being reflected by the quarter-wave plate to realize 90-degree rotation of the polarization direction. The laser has the advantages of complex installation and adjustment, difficult industrial application and incapability of avoiding the possibility of mutual interference in the laser transmission process.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a multi-group symmetrical array high-power optical fiber coupling semiconductor laser packaging structure, which avoids the possibility of mutual interference in the laser transmission process, has lower assembly requirement on the laser and is simple to adjust.
The invention also provides a packaging method of the packaging structure of the multi-group symmetrical array high-power optical fiber coupling semiconductor laser.
The technical scheme of the invention is as follows:
a packaging structure of multiple symmetrical array high-power fiber coupled semiconductor lasers comprises a shell, an R-type single-group laser, an L-type single-group laser, a polarization beam combiner and a fiber coupler,
the laser device comprises a shell and is characterized in that the shell is a cuboid, a groove is formed in one side of the cuboid, a step is arranged on one side of the lower surface of the groove, an R-type single-group laser and an L-type single-group laser are respectively arranged at two ends of the upper surface of the step, a polarization beam combiner is arranged on the lower surface of the groove in front of the step, and an optical fiber coupler is arranged on the shell on the other.
Preferably, the R-type single-group laser comprises a bottom plate, a stepped heat sink is arranged on the bottom plate, a laser chip is arranged on the stepped heat sink, the mounting height of the laser chip can be correspondingly adjusted according to actual needs, a fast-axis collimating lens is arranged on the light emitting side of the laser chip, a slow-axis collimating lens and a reflector are further arranged on the bottom plate, and light of the laser chip passes through the fast-axis collimating lens and the slow-axis collimating lens and is reflected out through the reflector.
Preferably, the L-shaped single-group laser comprises a bottom plate, a stepped heat sink is arranged on the bottom plate, a laser chip is arranged on the stepped heat sink, the installation height of the laser chip can be adjusted correspondingly according to actual needs, a fast-axis collimating lens is arranged on the light emitting side of the laser chip, a slow-axis collimating lens and a reflector are further arranged on the bottom plate, and light of the laser chip passes through the fast-axis collimating lens and the slow-axis collimating lens and is reflected by the reflector; the reflector of the R-type single-group laser on the same step is in mirror symmetry with the reflector of the L-type single-group laser; and the laser reflected by the reflector of the R-type single group laser and the laser reflected by the reflector of the L-type single group laser enter the polarization beam combiner together.
Preferably, the groove shape is the cuboid, and groove lower surface one side is equipped with 4 groups of steps.
Preferably, the optical fiber coupler comprises a coupling lens, a fixing seat and an optical fiber assembly, the coupling lens is assembled at one end of the fixing seat, the optical fiber assembly is assembled at the other end of the fixing seat, the fixing seat is assembled on the shell, the coupling lens is arranged on the inner side of the shell, and the optical fiber assembly is arranged on the outer side of the shell.
Preferably, the cross section of the polarization beam combiner is a right trapezoid, the upper surface of the polarization beam combiner is an S3 surface, a hollow part is arranged in the polarization beam combiner, the hollow part is close to the side surface where the bevel edge of the right trapezoid is located, the side surface in the hollow part corresponding to the side surface of the bevel edge is an S4 surface, the cross section of the hollow part is a parallelogram, the side surface of the bevel edge is parallel to an S4 surface, a rectangular opening is formed in the lower surface of the hollow part, the size of the S1 surface of the lower surface of the hollow part is the same as that of the S2 surface of the lower surface of the polarization beam combiner, and the side surface. After two beams of laser enter the polarization beam combiner, one beam of laser is transmitted through the S1 surface, reflected by the side surface of the oblique edge, reflected by the S4 surface and transmitted and output through the S3 surface, the other beam of laser is transmitted through the S2 surface and transmitted and output through the S3 surface, and the two beams of laser form one beam of output.
Preferably, the fast axis collimating lens is an aspheric cylindrical lens, the shape of the fast axis collimating lens is a semi-cylinder, the surface S1 is a curved surface, the surface S2 is a plane, the fast axis collimating lens is installed on the laser chip module through the surface S2, the residual divergence angle of fast axis collimation is less than or equal to 5mrad, the two surfaces S1 and S2 are coated with AR films, the transmissivity is greater than or equal to 99.5% @785 and 985nm, and the laser damage threshold is as follows: not less than 15KW/cm2。
Preferably, the slow axis collimating lens is a spherical cylindrical lens in the shape of a cuboid, one surface S1 is set as a curved surface, the surface S1 facing the plane S2 is a surface, the residual divergence angle of slow axis collimation is less than or equal to 15mrad, two surfaces S1 and S2 are coated with AR films, the transmissivity is more than or equal to 99.5% @785 and 985nm, the incidence angle AOI is 0-12.5Deg, and the laser damage threshold is more than or equal to 10KW/cm2。
Preferably, the reflecting mirror is a 45-degree high-reflectivity mirror, the reflectivity is more than or equal to 99 percent, and the S surface is an opaque planeThe S surface is not transmitted, is totally reflected, is coated with a film, the reflectivity AR is more than or equal to 99% @780-900nm, the reflectivity BR is more than or equal to 99% @900-1000nm, the incident angle AOI is 45+/-5Deg, and the laser damage threshold is as follows: not less than 10KW/cm2。
Preferably, the step heat sink is provided with a drainage groove, when the laser chip module is sintered on the step heat sink, the overflowed part of solder can be discharged to the heat sink below along with the drainage groove, so that the pollution of a luminous area of the cavity surface to influence the subsequent alignment of the fast axis is avoided.
A packaging method of a packaging structure of a plurality of groups of symmetrical array high-power optical fiber coupling semiconductor lasers comprises the following steps:
(1) a laser chip is arranged on the stepped heat sink, a fast-axis collimating lens is arranged on the light emitting side of the laser chip, a slow-axis collimating lens and a reflector are arranged on the bottom plate, and an R-type single-group laser and an L-type single-group laser are respectively formed;
(2) the R-type single-group laser and the L-type single-group laser are respectively arranged on steps in the groove, and a reflector of the R-type single-group laser on the same step and a reflector of the L-type single-group laser are in mirror symmetry;
(3) and a polarization beam combiner and an optical fiber coupler are arranged in the groove to complete the packaging of a plurality of groups of symmetrical array high-power optical fiber coupling semiconductor lasers.
The invention has the beneficial effects that:
1. the novel packaging structure of the multiple groups of symmetrical arrays of the R-type single-group laser and the L-type single-group laser avoids the problem of mutual interference possibly caused by spatial beam combination of the high-power single-group laser, obviously improves the quality of a light source, and simultaneously avoids the problem of uneven heat dissipation of the high-power single-group laser.
2. The invention has simple structure, improves the manufacturing efficiency, has simple adjustment and meets the requirement of high power by packaging a plurality of groups of lasers.
3. The polarization beam combiner solves the problem of power attenuation caused by long transmission distance of the existing single-group laser with the same power, greatly improves the output power of unit volume, and is beneficial to fiber coupling with higher power.
Drawings
FIG. 1 is a top view of the structure of the present invention;
FIG. 2 is a schematic structural view of the present invention;
FIG. 3 is a top view of an R-type single group laser of the present invention;
FIG. 4 is a schematic diagram of an R-type single group laser structure according to the present invention;
FIG. 5 is a top view of an L-shaped single group laser of the present invention;
FIG. 6 is a schematic diagram of an L-shaped single group laser structure according to the present invention;
FIG. 7 is a top view of the housing of the present invention;
FIG. 8 is a schematic view of the housing structure of the present invention;
FIG. 9 is a schematic diagram of a polarization beam combiner according to the present invention;
FIG. 10 is an optical top view of the present invention;
FIG. 11 is a schematic diagram of a fast axis collimating lens of the present invention;
FIG. 12 is a schematic diagram of a slow-axis collimating lens of the present invention;
FIG. 13 is a schematic view of a reflector structure according to the present invention;
wherein, 1, R type single group laser; 2. an L-type single group laser; 3. a housing; 4. a polarization beam combiner; 5. a coupling lens; 6. a fixed seat; 7. an optical fiber assembly; 8. a laser chip; 9. a fast axis collimating lens; 10. a slow axis collimating lens; 11. a mirror; 12. a groove; 13. a step; 14. a drainage groove; 15. a base plate; 16. a stepped heat sink.
Detailed Description
The present invention will be further described by way of examples, but not limited thereto, with reference to the accompanying drawings.
Example 1: as shown in fig. 1-2, the present embodiment provides a package structure of multiple symmetric arrays of high-power fiber-coupled semiconductor lasers, which includes a housing 3, an R-type single-group laser 1, an L-type single-group laser 2, a polarization beam combiner 4 and a fiber coupler, wherein,
the shell 3 is a cuboid, a groove 12 is formed in one side of the cuboid, a step 13 is formed in one side of the lower surface of the groove 12, the shell is structured as shown in figures 7-8, an R-type single-group laser 1 and an L-type single-group laser 2 are respectively arranged at two ends of the upper surface of the step 13, a polarization beam combiner 4 is arranged on the lower surface of the groove 12 in front of the step 13, and an optical fiber coupler is arranged on the shell 3 above the other side of the lower surface of the groove 12.
The R-type single-group laser 1 comprises a bottom plate 15, a stepped heat sink 16 is arranged on the bottom plate 15, a laser chip 8 is arranged on the stepped heat sink 16 at the lowest price, a fast-axis collimating lens 9 is arranged on the light emitting side of the laser chip 8, a slow-axis collimating lens 10 and a reflector 11 are further arranged on the bottom plate 15, the R-type single-group laser 1 is structurally shown in figures 3-4, and light of the laser chip 8 passes through the fast-axis collimating lens 9 and the slow-axis collimating lens 10 and is reflected and emitted through the reflector 11.
The L-shaped single-group laser 2 comprises a bottom plate 15, a stepped heat sink 16 is arranged on the bottom plate 15, a laser chip 8 is arranged on the lowest level of the stepped heat sink 16, a fast-axis collimating lens 9 is arranged on the light emitting side of the laser chip 8, a slow-axis collimating lens 10 and a reflector 11 are further arranged on the bottom plate 15, the structure of the L-shaped single-group laser 2 is shown in the figures 5-6, and light of the laser chip 8 passes through the fast-axis collimating lens 9 and the slow-axis collimating lens 10 and is reflected and emitted through the reflector 11; the reflecting mirror 11 of the R-type single-group laser 1 on the same step is in mirror symmetry with the reflecting mirror 11 of the L-type single-group laser 2; the laser light reflected by the reflector of the R-type single group laser and the laser light reflected by the reflector of the L-type single group laser enter the polarization beam combiner 4 together, as shown in fig. 10.
The cross section of the polarization beam combiner 4 is a right trapezoid, the upper surface of the polarization beam combiner 4 is an S3 surface, a hollow part is arranged in the polarization beam combiner, the hollow part is close to the side surface where the bevel edge of the right trapezoid is located, the side surface in the hollow part corresponding to the side surface of the bevel edge is an S4 surface, the cross section of the hollow part is a parallelogram, the side surface of the bevel edge is parallel to an S4 surface, a rectangular opening is formed in the lower surface of the hollow part, the size of the S1 surface of the lower surface of the hollow part is the same as that of the S2 surface of the lower surface of the polarization beam combiner, the side surface of the bevel edge is 45 degrees relative to the S. After two beams of laser enter the polarization beam combiner 4, one beam of laser is transmitted through the S1 plane, reflected by the side face of the oblique edge, reflected by the S4 plane and transmitted and output through the S3 plane, the other beam of laser is transmitted through the S2 plane and transmitted and output through the S3 plane, and the two beams of laser form one beam of laser to be output.
The fast axis collimating lens 9 is an aspheric cylindrical lens, the shape is a semi-cylinder, the surface S1 is a curved surface, the surface S2 is a plane, as shown in fig. 11, the fast axis collimating lens is installed on the laser chip module through the surface S2, the residual divergence angle of fast axis collimation is 5mrad, the two surfaces S1 and S2 are coated with AR films, the transmissivity is 99.5% @785 @ 985nm, and the laser damage threshold is 15KW/cm2。
The slow axis collimating lens 10 is a spherical cylindrical lens with a cuboid shape, one surface of the S1 is a curved surface, the surface of the S1 facing the curved surface is an S2 surface, as shown in FIG. 12, the residual divergence angle of slow axis collimation is 15mrad, both surfaces of the S1 and S2 are coated with AR films, the transmissivity is 99.5% @785 and 985nm, the incident angle AOI is 0-12.5Deg, and the laser damage threshold is 10KW/cm2。
The reflector 11 is a 45-degree high-reflectivity mirror, as shown in fig. 13, the reflectivity is 99%, the S surface is an opaque plane, the S surface is not transmissive, is totally reflective, and is coated with a film, the reflectivity AR is 99% @780-2。
A packaging method of a packaging structure of a plurality of groups of symmetrical array high-power optical fiber coupling semiconductor lasers comprises the following steps:
(1) a laser chip 8 is arranged on the stepped heat sink 16, a fast axis collimating lens 9 is arranged on the light emitting side of the laser chip 8, a slow axis collimating lens 10 and a reflector 11 are arranged on the bottom plate 15, and an R-type single-group laser 1 and an L-type single-group laser 2 are respectively formed;
(2) the R-type single-group laser 1 and the L-type single-group laser 2 are respectively arranged on steps in the groove 12, and a reflector of the R-type single-group laser 1 on the same step is in mirror symmetry with a reflector of the L-type single-group laser 2;
(3) and a polarization beam combiner 4 and an optical fiber coupler are arranged in the groove 12 to complete the packaging of a plurality of groups of symmetrical array high-power optical fiber coupling semiconductor lasers.
Example 2: the structure of the packaging structure of the high-power optical fiber coupling semiconductor laser with multiple groups of symmetrical arrays is as described in embodiment 1, and the difference is that the groove 12 is cuboid, and 4 groups of steps are arranged on one side of the lower surface of the groove 12.
Example 3: the structure of the packaging structure of the multi-group symmetrical array high-power optical fiber coupling semiconductor laser is as described in embodiment 1, and the difference is that the optical fiber coupler comprises a coupling lens 5, a fixed seat 6 and an optical fiber assembly 7, wherein the coupling lens 5 is assembled at one end of the fixed seat 6, the optical fiber assembly 7 is assembled at the other end of the fixed seat 6, the fixed seat 6 is assembled on a shell 3, the coupling lens 5 is arranged on the inner side of the shell 3, and the optical fiber assembly 7 is arranged on the outer side of the shell 3.
Example 4: the structure of the packaging structure of the high-power optical fiber coupling semiconductor laser with multiple groups of symmetrical arrays is as described in embodiment 1, and the difference is that a drainage groove 14 is formed in a stepped heat sink 16, when a laser chip 8 is sintered on the stepped heat sink 16, part of overflowing solder can be discharged to a heat sink below along with the drainage groove 14, and the pollution of a luminous area of a cavity surface to influence the subsequent alignment of a fast axis is avoided.
Comparative example: the comparative example provides a multi-chip optical fiber coupling semiconductor laser, and the structure is that a chip is welded on a heat sink, then the chip is collimated by a fast axis collimating lens and a slow axis collimating lens, the chip is horizontally reflected to a focusing lens by reflectors with different heights, and finally the chip is coupled into a horizontal optical fiber in a focusing manner, parameters of the comparative example and parameters of the example 1 are shown in a table 1, as can be seen from the table 1, the performance of each parameter of the example 1 is superior to that of the comparative example, the yield of the example 1 is obviously improved compared with that of the comparative example, the failure rate is reduced, and the improvement effect is obvious.
Table 1: comparison of comparative example with parameters of example 1
Claims (10)
1. A packaging structure of a plurality of groups of symmetrical array high-power optical fiber coupling semiconductor lasers is characterized by comprising a shell, an R-type single-group laser, an L-type single-group laser, a polarization beam combiner and an optical fiber coupler, wherein,
the laser device comprises a shell and is characterized in that the shell is a cuboid, a groove is formed in one side of the cuboid, a step is arranged on one side of the lower surface of the groove, an R-type single-group laser and an L-type single-group laser are respectively arranged at two ends of the upper surface of the step, a polarization beam combiner is arranged on the lower surface of the groove in front of the step, and an optical fiber coupler is arranged on the shell on the other.
2. The package structure of multiple symmetrical arrays of high power fiber coupled semiconductor lasers as claimed in claim 1, wherein the R-type single group laser includes a bottom plate, a stepped heat sink is disposed on the bottom plate, a laser chip is disposed on the stepped heat sink, a fast axis collimating lens is disposed on a light emitting side of the laser chip, a slow axis collimating lens and a reflector are disposed on the bottom plate, and light of the laser chip passes through the fast axis collimating lens and the slow axis collimating lens and is reflected by the reflector.
3. The package structure of multiple symmetrical arrays of high-power fiber-coupled semiconductor lasers as claimed in claim 2, wherein the L-shaped single-group laser comprises a bottom plate, a stepped heat sink is disposed on the bottom plate, a laser chip is disposed on the stepped heat sink, a fast-axis collimating lens is disposed on a light emitting side of the laser chip, a slow-axis collimating lens and a reflector are further disposed on the bottom plate, and light of the laser chip passes through the fast-axis collimating lens and the slow-axis collimating lens and is reflected by the reflector; the reflector of the R-type single-group laser on the same step is in mirror symmetry with the reflector of the L-type single-group laser; the laser reflected by the reflector of the R-type single group laser and the laser reflected by the reflector of the L-type single group laser enter the polarization beam combiner together;
preferably, the groove shape is the cuboid, and groove lower surface one side is equipped with 4 groups of steps.
4. The package structure of multiple symmetrical arrays of high power fiber-coupled semiconductor lasers as claimed in claim 1, wherein the fiber coupler comprises a coupling lens, a holder and a fiber assembly, the coupling lens is mounted on one end of the holder, the fiber assembly is mounted on the other end of the holder, the holder is mounted on the housing, the coupling lens is inside the housing, and the fiber assembly is outside the housing.
5. The package structure of multiple symmetric arrays of high-power fiber-coupled semiconductor lasers according to claim 1, wherein the cross section of the polarization beam combiner is a right trapezoid, the upper surface of the polarization beam combiner is an S3 plane, a hollow portion is provided in the polarization beam combiner, the hollow portion is close to the side where the bevel edge of the right trapezoid is located, the side corresponding to the side of the bevel edge in the hollow portion is an S4 plane, the cross section of the hollow portion is a parallelogram, the side of the bevel edge is parallel to the S4 plane, the lower surface of the hollow portion is provided with a rectangular opening, the size of the S1 plane of the lower surface of the hollow portion is the same as that of the S2 plane of the lower surface of the polarization beam combiner, and the side of the bevel edge.
6. The package structure of multiple symmetric arrays of high-power fiber-coupled semiconductor laser devices as claimed in claim 2, wherein the fast axis collimating lens is an aspheric cylindrical lens, the shape is a semi-cylinder, the surface S1 is a curved surface, the surface S2 is a plane, the fast axis collimating lens is mounted on the laser chip module through the surface S2, the residual divergence angle of fast axis collimation is less than or equal to 5mrad, the surfaces S1 and S2 are coated with AR films, the transmittance is greater than or equal to 99.5% @785 + 985nm, the laser damage threshold: not less than 15KW/cm 2.
7. The package structure of multiple symmetric arrays of high-power fiber-coupled semiconductor lasers as claimed in claim 2, wherein the slow-axis collimating lens is a spherical cylindrical lens with a rectangular parallelepiped shape, one surface of S1 is a curved surface, the surface of S1 facing the curved surface is a surface of S2, the slow-axis collimation residual divergence angle is less than or equal to 15mrad, both surfaces of S1 and S2 are coated with AR films, the transmittance is greater than or equal to 99.5% @785 @ 985nm, the incident angle AOI is 0-12.5Deg, and the laser damage threshold is greater than or equal to 10KW/cm 2.
8. The package structure of multiple symmetric arrays of high-power fiber-coupled semiconductor laser as claimed in claim 2, wherein the reflector is a 45-degree high-reflectivity mirror, the reflectivity is greater than or equal to 99%, the S-plane is opaque plane, the S-plane is opaque, totally reflective, and coated on the S-plane, the reflectivity AR is greater than or equal to 99% @ 780-: not less than 10KW/cm 2.
9. The package structure of multiple symmetric arrays of high-power fiber-coupled semiconductor lasers as claimed in claim 2, wherein the step heat sink is provided with a drainage groove.
10. The method for packaging multiple symmetrical arrays of high power fiber coupled semiconductor laser packages according to claim 3, comprising the steps of:
(1) a laser chip is arranged on the stepped heat sink, a fast-axis collimating lens is arranged on the light emitting side of the laser chip, a slow-axis collimating lens and a reflector are arranged on the bottom plate, and an R-type single-group laser and an L-type single-group laser are respectively formed;
(2) the R-type single-group laser and the L-type single-group laser are respectively arranged on steps in the groove, and a reflector of the R-type single-group laser on the same step and a reflector of the L-type single-group laser are in mirror symmetry;
(3) and a polarization beam combiner and an optical fiber coupler are arranged in the groove to complete the packaging of a plurality of groups of symmetrical array high-power optical fiber coupling semiconductor lasers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010462594.3A CN112886390A (en) | 2020-05-27 | 2020-05-27 | Multi-group symmetrical array high-power optical fiber coupling semiconductor laser packaging structure and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010462594.3A CN112886390A (en) | 2020-05-27 | 2020-05-27 | Multi-group symmetrical array high-power optical fiber coupling semiconductor laser packaging structure and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112886390A true CN112886390A (en) | 2021-06-01 |
Family
ID=76042808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010462594.3A Pending CN112886390A (en) | 2020-05-27 | 2020-05-27 | Multi-group symmetrical array high-power optical fiber coupling semiconductor laser packaging structure and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112886390A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114498287A (en) * | 2022-04-02 | 2022-05-13 | 北京热刺激光技术有限责任公司 | Semiconductor optical fiber coupling device |
| CN115832861A (en) * | 2022-09-26 | 2023-03-21 | 中南大学 | Semiconductor laser polarization beam splitting prism and reflection prism coupling packaging equipment |
| CN117526074A (en) * | 2024-01-05 | 2024-02-06 | 山东华光光电子股份有限公司 | Distributed feedback type passive mode locking stable laser and manufacturing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102401949A (en) * | 2011-12-02 | 2012-04-04 | 北京工业大学 | Optical fiber coupling module of platform-type turning and reflecting single-tube semiconductor laser |
| US20150219905A1 (en) * | 2014-02-05 | 2015-08-06 | Nlight Photonics Corporation | Single-emitter line beam system |
| CN104836119A (en) * | 2015-05-26 | 2015-08-12 | 深圳市创鑫激光股份有限公司 | Optical fiber coupled laser |
| CN106384935A (en) * | 2015-07-28 | 2017-02-08 | 海信集团有限公司 | Laser light source system and display apparatus |
| CN110308527A (en) * | 2019-07-24 | 2019-10-08 | 苏州长光华芯光电技术有限公司 | A kind of optically coupled device of laser |
| CN110718848A (en) * | 2019-09-18 | 2020-01-21 | 深圳市星汉激光科技有限公司 | Semiconductor laser device |
| CN112103768A (en) * | 2020-11-09 | 2020-12-18 | 深圳市星汉激光科技有限公司 | Semiconductor laser |
-
2020
- 2020-05-27 CN CN202010462594.3A patent/CN112886390A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102401949A (en) * | 2011-12-02 | 2012-04-04 | 北京工业大学 | Optical fiber coupling module of platform-type turning and reflecting single-tube semiconductor laser |
| US20150219905A1 (en) * | 2014-02-05 | 2015-08-06 | Nlight Photonics Corporation | Single-emitter line beam system |
| CN104836119A (en) * | 2015-05-26 | 2015-08-12 | 深圳市创鑫激光股份有限公司 | Optical fiber coupled laser |
| CN106384935A (en) * | 2015-07-28 | 2017-02-08 | 海信集团有限公司 | Laser light source system and display apparatus |
| CN110308527A (en) * | 2019-07-24 | 2019-10-08 | 苏州长光华芯光电技术有限公司 | A kind of optically coupled device of laser |
| CN110718848A (en) * | 2019-09-18 | 2020-01-21 | 深圳市星汉激光科技有限公司 | Semiconductor laser device |
| CN112103768A (en) * | 2020-11-09 | 2020-12-18 | 深圳市星汉激光科技有限公司 | Semiconductor laser |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114498287A (en) * | 2022-04-02 | 2022-05-13 | 北京热刺激光技术有限责任公司 | Semiconductor optical fiber coupling device |
| CN114498287B (en) * | 2022-04-02 | 2022-06-28 | 北京热刺激光技术有限责任公司 | Semiconductor optical fiber coupling device |
| CN115832861A (en) * | 2022-09-26 | 2023-03-21 | 中南大学 | Semiconductor laser polarization beam splitting prism and reflection prism coupling packaging equipment |
| CN115832861B (en) * | 2022-09-26 | 2024-04-16 | 中南大学 | Semiconductor laser polarization beam splitter prism and reflection prism coupling packaging equipment |
| CN117526074A (en) * | 2024-01-05 | 2024-02-06 | 山东华光光电子股份有限公司 | Distributed feedback type passive mode locking stable laser and manufacturing method thereof |
| CN117526074B (en) * | 2024-01-05 | 2024-05-24 | 山东华光光电子股份有限公司 | Distributed feedback type passive mode locking stable laser and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110718848A (en) | Semiconductor laser device | |
| CN112886390A (en) | Multi-group symmetrical array high-power optical fiber coupling semiconductor laser packaging structure and method | |
| WO2020052515A1 (en) | Laser beam combining device with an unstable resonator cavity | |
| CN114883910A (en) | Semiconductor laser module based on TO encapsulation multiple single tubes | |
| CN111367140A (en) | Projector optical system, projector optical engine and projection method | |
| CN210490075U (en) | Semiconductor laser device | |
| CN112886382A (en) | Single-group high-power optical fiber coupling semiconductor laser packaging structure and application | |
| CN109149369B (en) | Multi-single-tube semiconductor laser collimation beam combination structure | |
| CN112636158A (en) | Semiconductor laser with double-layer optical path | |
| CN112615248A (en) | Blue laser | |
| CN111916991A (en) | Polarization type high-power laser | |
| CN217545225U (en) | Semiconductor laser of multi-chip package | |
| CN114243451B (en) | Semiconductor pump source and fiber laser | |
| CN116581636A (en) | Multi-optical-path laser based on polarization beam combination, control method and equipment | |
| CN114976876A (en) | Semiconductor laser of multi-chip package | |
| CN116154589A (en) | Laser pump source | |
| CN212230775U (en) | Polarization type high-power laser | |
| CN210490083U (en) | Laser device | |
| CN114172015A (en) | Focusing coupling light path of semiconductor laser | |
| CN112787220A (en) | High-power semiconductor laser | |
| CN112310800A (en) | Compact optical fiber coupling output semiconductor laser | |
| CN220753996U (en) | Multi-tail fiber output laser pumping source | |
| CN215732668U (en) | Anti-return semiconductor laser | |
| CN221651957U (en) | Step-free semiconductor laser | |
| CN221614376U (en) | Semiconductor laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210601 |