CN112768137B - Preparation method of electrode with narrow channel - Google Patents
Preparation method of electrode with narrow channel Download PDFInfo
- Publication number
- CN112768137B CN112768137B CN202011505313.4A CN202011505313A CN112768137B CN 112768137 B CN112768137 B CN 112768137B CN 202011505313 A CN202011505313 A CN 202011505313A CN 112768137 B CN112768137 B CN 112768137B
- Authority
- CN
- China
- Prior art keywords
- paste
- narrow channel
- electrode
- substrate
- flash lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a preparation method of an electrode with a narrow channel, which comprises the following steps: preparing a groove on a substrate according to a designed pattern, coating conductive paste on the substrate, and then carrying out flash lamp sintering to obtain an electrode with a narrow channel, wherein the narrow channel is positioned in the groove. According to the preparation method of the electrode with the narrow channel, disclosed by the invention, the flash lamp sintering technology is adopted, so that materials such as metal or quantum dots in the slurry absorb and release light energy, and the surface layer of the polymer film of the substrate is fused and shrunk when the instantaneous temperature reaches above 400 ℃, so that the electrode with the narrow channel is prepared, and the prepared electrode is convenient, rapid, safe and low in cost, and the channel is narrow.
Description
Technical Field
The invention belongs to the technical field of printed electronics, and particularly relates to a preparation method of an electrode with a narrow channel.
Background
There are many methods for preparing narrow channel electrodes, such as photolithography, printing, and vacuum system-based methods (e.g., evaporation, sputtering, etc.). Printing processes have been developed very rapidly in recent years because of their high throughput and low cost. Among the printing methods, conventional screen printing is the main method for preparing printed circuits due to low cost and high yield. However, conventional screen printing can be difficult to print patterns with channels within 60 μm due to limitations in screen parameters, paste, and printing equipment.
Disclosure of Invention
In view of the above, in order to overcome the defects of the prior art, the present invention aims to provide a method for preparing an electrode with a narrow channel, which can quickly and conveniently prepare an electrode with a narrow channel of 20-80 μm.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method of making an electrode having a narrow channel, comprising the steps of: preparing a groove on a substrate according to a designed pattern, coating conductive paste on the substrate, and then carrying out flash lamp sintering to obtain an electrode with a narrow channel, wherein the narrow channel is positioned in the groove.
According to some preferred embodiments of the invention, the energy of the irradiation in the flash lamp sintering is 0.1 to 20J/cm 2 The time for the flash lamp to sinter is 0.1-10ms, soThe irradiation in the flash lamp sintering is performed by using a xenon lamp.
The xenon lamp sintering technology can complete the sintering of material slurry of metal or quantum dots and the like instantly, and has no obvious destructive effect on a polymer substrate. The edge melting phenomenon of the edge of a printed line can be caused in the process of flash lamp sintering, and the phenomenon is that the surface layer of a polymer film of a matrix is melted and shrunk to the degree of 10-30 mu m when the instantaneous temperature reaches above 400 ℃ because materials such as metal or quantum dots absorb the light energy released by a xenon lamp, and the electrode with a narrow channel can be well prepared by adopting the principle. And moreover, the xenon lamp sintering can well avoid the oxidation of copper, and the method is more suitable for the application of copper slurry.
According to some preferred embodiment aspects of the present invention, the conductive paste is a paste containing one, two or more of copper, silver, gold, platinum, a carbon material, a tin alloy, and quantum dots. Copper, silver, gold, platinum, carbon materials, tin alloys, quantum dots and the like are powder particles or flakes dispersed in the slurry, have light absorption property, and can convert light energy into heat energy. When the material is powdery, the average grain diameter is 0.1-0.5 μm; when the material is in a flake shape, the average grain diameter is 5-10 μm, so that the material can absorb light better and convert into heat energy during flash lamp sintering, and sintering is completed. The carbon material is graphene, carbon nano tubes and the like, and the tin alloy is tin-bismuth alloy, tin-silver-copper alloy and the like.
According to some preferred embodiments of the present invention, the conductive paste includes one of copper paste, silver paste, carbon paste, gold paste, and platinum paste, and the carbon paste is a paste including graphene and/or carbon nanotubes.
According to some preferred embodiments of the present invention, the conductive paste includes a solvent, and the flash lamp has a pre-baking step for removing the solvent before sintering. After the solvent is removed, the conductive paste forms a conductive film with a thickness of 0.1-30 μm on the substrate. The substances constituting the film have light absorption properties and can convert light energy into heat energy.
In some embodiments of the present invention, the solvent is preferably ethylene glycol, ethylene glycol methyl ether, diethylene glycol ethyl ether acetate, etc., and the corresponding pre-baking parameter is 100 ℃ for 10 min.
According to some preferred embodiments of the invention, the groove is prepared by scribing, laser engraving or embossing on the substrate using a blade. The depth of the groove is 100-500 μm, and the width is 100-300 μm.
According to some preferred embodiments of the invention, the glass transition temperature of the substrate is less than or equal to 100 ℃.
According to some preferred embodiments of the invention, the substrate comprises one of PET, PEN, PP, PC, PU.
According to some preferred embodiments of the present invention, the coating is to cover the conductive paste on the substrate by printing or coating.
According to some preferred embodiments of the invention, the printing comprises one of screen printing, flexography, gravure printing, and transfer printing.
In some embodiments of the present invention, the method for preparing an electrode having a narrow channel specifically comprises the steps of:
1) forming a groove on the substrate according to the designed pattern;
2) preparing conductive slurry, coating the conductive slurry on a base material, and pre-drying to obtain a conductive film;
3) and (4) carrying out flash lamp sintering by adopting a xenon lamp to obtain the electrode with the narrow channel.
Compared with the prior art, the invention has the beneficial effects that: according to the preparation method of the electrode with the narrow channel, disclosed by the invention, the flash lamp sintering technology is adopted, so that materials such as metal or quantum dots in the slurry absorb and release light energy, and the surface layer of the polymer film of the substrate is fused and shrunk when the instantaneous temperature reaches above 400 ℃, so that the electrode with the narrow channel is prepared, and the prepared electrode is convenient, rapid, safe and low in cost, and the channel is narrow.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a first schematic diagram of step 2) in a preferred embodiment of the present invention;
FIG. 2 is a second schematic diagram of step 2) in a preferred embodiment of the present invention;
FIG. 3 is a schematic representation of step 3) in a preferred embodiment of the invention;
FIG. 4 is an enlarged view of a narrow channel prepared in preferred embodiment 1 of the present invention;
in the drawings: a substrate-1, a conductive film-2, a groove-3 and a channel-4.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not a whole embodiment. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1 to 4, the method for manufacturing an electrode having a narrow channel in the present embodiment includes the steps of:
1) preparation of electroconductive paste
The conductive paste in this embodiment is copper paste, and the components and the specific preparation process of the copper paste refer to patent 201810186271.9, which is named as: disclosed are copper conductive paste suitable for xenon lamp sintering and a preparation method thereof.
2) Forming a conductive film
As shown in FIG. 1, the PET substrate was cut into grooves of 100 μm in depth and 20 μm in width by a blade.
The copper paste prepared in step 1) was printed on a PET substrate using a screen printing process, as shown in fig. 2.
And (3) pre-drying at 80 ℃ to remove the solvent in the copper paste, so that the copper paste forms a copper film on the surface of the PET substrate, wherein the thickness of the copper film is 5 μm in the embodiment. The copper film has light absorption and can convert light energy into heat energy. The groove is the position of the narrow channel.
3) Flash lamp sintering
Adopting a xenon lamp to carry out flash lamp sintering, wherein the energy is controlled to be 1.5J/cm during sintering 2 The time is 1 ms. As shown in fig. 3, an electrode having a narrow channel pattern is obtained.
The final narrow channel pattern obtained in this example is shown in fig. 4, where the channel width is about 20 μm.
Example 2
As shown in fig. 1 to 4, the method for manufacturing an electrode having a narrow channel in the present embodiment includes the steps of:
1) preparation of electroconductive paste
The conductive paste in this embodiment is a silver paste, and components and a specific preparation process of the silver paste can refer to patent 201810180178.7, which is named as: a printing conductive silver paste and a preparation method thereof.
2) Forming a conductive film
As shown in FIG. 1, grooves were formed in the PEN substrate by laser engraving, the grooves having a depth of 300 μm and a width of 30 μm in this example.
The silver paste prepared in step 1) was printed on a PEN substrate using a screen printing process, as shown in fig. 2.
And (3) pre-baking at 100 ℃ to remove the solvent in the silver paste, so that the silver paste forms a silver film on the surface of the PEN substrate, wherein the thickness of the silver film is 10 μm in the embodiment. The silver film has light absorption and can convert light energy into heat energy. The groove is the position of the narrow channel.
3) Flash lamp sintering
Adopting a xenon lamp to carry out flash lamp sintering, wherein the energy is controlled to be 5J/cm during sintering 2 The time is 2 ms. As shown in fig. 3, an electrode having a narrow channel (about 30 μm) pattern was obtained.
Example 3
As shown in fig. 1 to 4, the method for manufacturing an electrode having a narrow channel in the present embodiment includes the steps of:
1) preparation of electroconductive paste
The conductive paste in this embodiment is gold paste.
2) Forming a conductive film
As shown in fig. 1, the PP substrate was engraved with a laser to obtain grooves, which in this example were 400 μm deep and 60 μm wide.
Printing the gold paste prepared in step 1) on a PP substrate by a flexographic printing process, as shown in fig. 2.
And (3) pre-drying at 100 ℃ to remove the solvent in the gold paste, so that the gold paste forms a gold film on the surface of the PP (polypropylene) base material, wherein the thickness of the gold film in the embodiment is 15 microns. The gold film has light absorption and can convert light energy into heat energy. The groove is the position of the narrow channel.
3) Flash lamp sintering
Adopting a xenon lamp to carry out flash lamp sintering, wherein the energy is controlled to be 10J/cm during sintering 2 The time is 4 ms. As shown in fig. 4, an electrode having a narrow channel (about 50 μm) pattern was obtained.
According to the preparation method of the electrode with the narrow channel, disclosed by the invention, the flash lamp sintering technology is adopted, so that materials such as metal or quantum dots in the slurry absorb and release light energy, and the surface layer of the polymer film of the substrate is fused and shrunk when the instantaneous temperature reaches above 400 ℃, so that the electrode with the narrow channel is prepared, and the prepared electrode is convenient, rapid, safe and low in cost, and the channel is narrow.
The above-mentioned embodiments are provided only for illustrating the technical idea and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and to implement the present invention, and not to limit the protection scope of the present invention by this, and all equivalent changes or modifications made according to the spirit of the present invention should be covered in the protection scope of the present invention.
Claims (10)
1. A method for preparing an electrode with a narrow channel is characterized by comprising the following steps: preparing a groove on a substrate according to a designed pattern, coating conductive slurry on the substrate, and then carrying out flash lamp sintering to obtain an electrode with a narrow channel, wherein the narrow channel is positioned in the groove; the width of the narrow channel is 20-80 μm.
2. The method according to claim 1, wherein the energy of irradiation in the flash lamp sintering is 0.1 to 20J/cm 2 The irradiation time is 0.1-10ms, and a xenon lamp is adopted for irradiation.
3. The method according to claim 1, wherein the conductive paste is a paste containing one, two or more of copper, silver, gold, platinum, a carbon material, and a tin alloy.
4. The method according to claim 3, wherein the conductive paste comprises one of copper paste, silver paste, carbon paste, gold paste, and platinum paste.
5. The method according to claim 1, wherein the conductive paste contains a solvent, and the flash lamp has a pre-baking step for removing the solvent before sintering.
6. The method of claim 1, wherein the grooves are formed by scribing, laser engraving, or embossing on the substrate using a blade.
7. The method of claim 1, wherein the substrate has a glass transition temperature of 100 ℃ or less.
8. The method of claim 7, wherein the substrate comprises one of PET, PEN, PP, PC, PU.
9. The preparation method of claim 1, wherein the coating is performed by applying the conductive paste on the substrate by printing or coating.
10. The method of claim 9, wherein the printing comprises one of screen printing, flexography, gravure, and transfer printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011505313.4A CN112768137B (en) | 2020-12-18 | 2020-12-18 | Preparation method of electrode with narrow channel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011505313.4A CN112768137B (en) | 2020-12-18 | 2020-12-18 | Preparation method of electrode with narrow channel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112768137A CN112768137A (en) | 2021-05-07 |
| CN112768137B true CN112768137B (en) | 2022-09-16 |
Family
ID=75694454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011505313.4A Active CN112768137B (en) | 2020-12-18 | 2020-12-18 | Preparation method of electrode with narrow channel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112768137B (en) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
| TWI738824B (en) * | 2010-03-26 | 2021-09-11 | 友輝光電股份有限公司 | A method of forming an optical film |
| US8468680B2 (en) * | 2010-08-24 | 2013-06-25 | Roche Diagnostics Operations, Inc. | Biosensor test member and method for making the same |
| CN103594413A (en) * | 2012-08-14 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | A method for manufacturing a shallow trench isolating structure |
| CN103108492B (en) * | 2013-01-17 | 2015-10-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | The manufacture method of flexible print circuit and manufacturing installation |
| CN104392963B (en) * | 2014-05-16 | 2017-07-11 | 中国科学院微电子研究所 | Three-dimensional semiconductor device manufacturing method |
| CN110473655B (en) * | 2018-05-10 | 2021-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparent conductive film and preparation method thereof |
| CN108807278A (en) * | 2018-06-11 | 2018-11-13 | 中国科学院微电子研究所 | Semiconductor device and method for manufacturing the same |
-
2020
- 2020-12-18 CN CN202011505313.4A patent/CN112768137B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112768137A (en) | 2021-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Dimitriou et al. | Printable conductive inks used for the fabrication of electronics: an overview | |
| CN109421402B (en) | Laser engraving preparation method of high-conductivity graphene film array | |
| CN105304157B (en) | transparent conductive film with conductive copper network and preparation method thereof | |
| KR20120132424A (en) | Light sintering method of conductive Cu nano ink | |
| JP2012119611A (en) | Manufacturing method of through hole electrode substrate | |
| KR20120132111A (en) | Light sintering method of conductive Ag nano ink | |
| EP3598461A1 (en) | Dispersion, method for producing conductive pattern-equipped structure by using dispersion, and conductive pattern-equipped structure | |
| Hernandez-Castaneda et al. | Laser sintering of Cu nanoparticles on PET polymer substrate for printed electronics at different wavelengths and process conditions | |
| KR102397518B1 (en) | Formulations and processes for producing high-conductivity copper patterns | |
| JP2019512151A (en) | Conductive paste containing silicone oil | |
| CN112768137B (en) | Preparation method of electrode with narrow channel | |
| CN109074919B (en) | Method for forming transparent conductive pattern | |
| US12012523B2 (en) | Conductive film formation composition and method for manufacturing conductive film | |
| KR101679144B1 (en) | Composition for forming conductive copper pattern by light sintering including carbon nanostructures, method for preparing conductive copper pattern by light sintering, and electronic device including the conductive copper pattern prepared therefrom | |
| Liang et al. | Femtosecond Laser Patterning Wettability‐Assisted PDMS for Fabrication of Flexible Silver Nanowires Electrodes | |
| KR101104601B1 (en) | Paste for roll-to-plate patterning used in preparation of solar cell electrode and method for roll-to-plate patterning using the same | |
| JP2008144151A (en) | Printing ink and its manufacturing method, and electrode for plasma display panel obtained by using printing ink and its manufacturing method | |
| CN108257731B (en) | Laser localized removal preparation method of stacked metal grid type transparent electrode | |
| JP2009245844A (en) | Conductive paste | |
| CN112768138B (en) | Preparation method of pattern with narrow channel | |
| JP5353248B2 (en) | Wiring board and method of manufacturing wiring board | |
| CN109074917B (en) | Method for forming transparent conductive pattern | |
| KR101748105B1 (en) | Method for forming wiring line | |
| DE102004056492B3 (en) | Metal contained thermoplastic paste structured application method for thick film technologies, involves exhibiting one of temperatures by substrate, at which paste is transferred from medium to substrate and paste remains stable | |
| CN111261316B (en) | Conductive particle and ultraviolet light curing conductive silver paste containing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |