CN112737543A - High-performance surface acoustic wave resonator based on POI structure and manufacturing method - Google Patents
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000013078 crystal Substances 0.000 claims abstract description 21
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 238000003780 insertion Methods 0.000 abstract description 3
- 230000037431 insertion Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910003465 moissanite Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910012463 LiTaO3 Inorganic materials 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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Abstract
The invention relates to a high-performance surface acoustic wave resonator based on a POI structure and a manufacturing method thereof. The surface acoustic wave resonator includes: at least one Bragg reflection layer composed of a substrate layer of a high acoustic velocity material and a low acoustic velocity material layer formed on the substrate layer, wherein the substrate layer is 5 lambda thick, and the low acoustic velocity material is LGS with the Euler angle (90 degrees, 90 degrees and 0 degrees) of 0.1 lambda thick; a single crystal 36 DEG YX LiTaO formed over the layer of low acoustic velocity material3A piezoelectric layer of thickness 0.5 λ; and an electrode provided on the piezoelectric layer, the electrode duty cycle being 0.5-0.6, wherein λ is the wavelength of an acoustic wave excited by the electrode. The surface acoustic wave resonator has high frequency, low insertion loss, high FOM value and no stray, and the TCF value is close to zero.
Description
Technical Field
The invention relates to an acoustic wave resonator/filter, in particular to a high-performance acoustic surface wave resonator based on a POI structure in a mobile phone radio frequency front end and a manufacturing method thereof.
Background
With the development of wireless communication applications, people have higher and higher requirements on data transmission speed. Corresponding to the high utilization of spectrum resources and the complexity of the communication protocol. In order to support sufficient data transmission rates within a limited bandwidth, stringent requirements are placed on the various performances of the radio frequency system.
In the rf front-end module, the filter plays a crucial role. There are currently three major types of filters in the field, Surface Acoustic Wave (SAW), Bulk Acoustic Wave (BAW), and thin film bulk acoustic wave (FBAR) filters. And SAW is the mainstream of low frequency and medium frequency band, and is very suitable for use below 1.5GHz, and the upper limit of frequency is 2.5-3 GHz.
The SAW filter mainly uses the piezoelectric effect, when a voltage is applied to the crystal, the crystal is mechanically deformed, and electric energy is converted into mechanical energy. Its technology has evolved from Normal-SAW, TC-SAW, and further to IHP-SAW, as well as future XBAR technologies.
Existing IHP-SAW technology uses a hybrid technology similar to the multilayer reflective gate structure of SAW device + SMR-BAW device. The mixed structure technology not only endows the SAW device with the characteristic of simple single-side processing technology, but also endows the SMR-BAW device with the characteristic of low energy leakage.
IHP-SAW filters are a major development trend in the SAW filter industry at present due to their excellent temperature compensation performance, low insertion loss, and comparable or even superior to some BAW and FBAR filters.
The conventional IHP-SAW filter has the following three advantages:
1. the IHP-SAW filter with high Q value adopts a multi-layer reflection gate structure of SMR-BAW to focus more surface acoustic wave energy on the surface of the substrate, thereby reducing the loss of acoustic waves in the transmission process and improving the Q value of the device. The high Q characteristic (Qmax-3000, traditional SAW Qmax-1000) makes it have high out-of-band rejection, steep passband edge roll-off, and high isolation.
2. The TCF of the IHP-SAW can reach less than or equal to-20 ppm/DEG C, the further optimized design can reach 0 ppm/DEG C, and the TCF of the TC-SAW taking the lithium niobate as the piezoelectric layer is from-20 to-25 ppm/DEG C.
3. And (4) good heat dissipation performance.
The SMR-BAW multilayer reflection gate structure of the IHP-SAW filter is realized by alternately stacking high acoustic impedance and low acoustic impedance. The low acoustic impedance material mostly adopts TCF material with positive temperature coefficient, such as silicon dioxide; the high acoustic impedance layer is usually made of a material with a low temperature coefficient, such as SiN, W, etc.
However, the conventional IHP-SAW filter has the following problems:
firstly, the IHP-SAW working frequency is about 3.5GHz, and the high-frequency requirement of 5G communication can not be met (generally more than 5G is needed);
the quality factor Q of the IHP-SAW is about 3000 at most, and the requirement of low insertion loss of 5G communication is not met;
and TCF of the IHP-SAW can reach less than or equal to-20 ppm/DEG C, the frequency temperature coefficient is still larger, and the requirement of low frequency temperature coefficient (less than or equal to-10 ppm/DEG C) of 5G communication is not met.
Therefore, it is necessary to improve the operating frequency and the overall performance of the surface acoustic wave resonator.
Disclosure of Invention
This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter; nor is it intended to be used as an aid in determining or limiting the scope of the claimed subject matter.
The invention utilizes heterogeneous integration technology to convert LiTaO into LiTaO3The single crystal piezoelectric layer is combined with a high-sound-velocity high-heat-conduction substrate layer of the silicon carbide single crystal substrate, a single crystal LGS (lanthanum gallium silicate) inserted between the single crystal piezoelectric layer and the silicon carbide single crystal substrate layer is used as a temperature compensation layer and a low-sound-velocity layer, and a POI structure and a Bragg reflection layer are formed with the silicon carbide substrate layer, so that the working frequency and the comprehensive performance of the radio frequency surface acoustic wave filter are further improved.
A surface acoustic wave resonator of the present invention includes:
at least one Bragg reflection layer with thickness of 5 λ composed of substrate layer of high sound velocity material and low sound velocity material layer formed on the substrate layer, wherein the high sound velocity material of the substrate layer is selected from AlN and Al2O3SiC, diamond, W, the substrate layer has a low sound velocity materialThe material layer has more than three times of sound velocity, the Euler angle of the low-sound-velocity material LGS is (90 degrees, 90 degrees and 0 degrees), and the thickness is 0.1 lambda;
single crystal 36 ° YX LiTaO formed over a layer of low acoustic velocity material3A piezoelectric layer having a thickness of 0.5 λ; and
and electrodes with a duty ratio of 0.5-0.6 provided on the piezoelectric layers, the electrodes being a laminate of Ti, Mo, Al.
Where λ is the wavelength of the acoustic wave excited by the electrodes.
The surface acoustic wave resonator further comprises a plurality of Bragg reflection layers, the number n of the Bragg reflection layers can be 10 at most, n substrate layers and n low-sound-velocity material layers are alternately stacked and formed by plating a low-sound-velocity LGS material on the substrate layers in one mode of PECVD, CVD, PVD, MOCVD and MBE, and a piezoelectric layer is formed on the low-sound-velocity material layer of the Bragg reflection layer at the uppermost layer.
The electrodes in a surface acoustic wave resonator of the present invention may or may not be completely embedded in the piezoelectric layer. The thickness of the electrode is 180nm, the length of the electrode along the aperture is 10 lambda, and the number of electrode finger pairs is 1000 pairs.
A method for manufacturing a surface acoustic wave resonator of the present invention includes:
providing a substrate layer of a high acoustic velocity material having a thickness of 5 λ, the high acoustic velocity material being selected from AlN, Al2O3At least one of SiC, diamond, and W;
plating a low-sound-velocity material LGS with the thickness of 0.1 lambda Euler angle (90 degrees, 90 degrees and 0 degrees) on the substrate layer in a mode of one of PECVD, CVD, PVD, MOCVD and MBE to form a low-sound-velocity material LGS layer, wherein the sound velocity of the substrate layer is more than three times that of the low-sound-velocity material layer;
formation of single crystal 36 ° YX LiTaO over a layer of low acoustic velocity LGS material3A piezoelectric layer of a high acoustic velocity material having a thickness of 0.5 λ;
an IDT electrode is formed on the piezoelectric layer, the IDT electrode is formed by sequentially laminating Ti, Mo and Al, the electrode can be completely embedded into the piezoelectric layer or not embedded into the piezoelectric layer, the thickness of the electrode is 180nm, the length of the electrode along the aperture is 10 lambda, and the number of electrode finger pairs is 1000. Where λ is the acoustic wavelength excited by the IDT electrode.
These and other features and advantages will become apparent upon reading the following detailed description and upon reference to the accompanying drawings. It is to be understood that both the foregoing general description and the following detailed description are explanatory only and are not restrictive of aspects as claimed.
Drawings
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which specific embodiments of the invention are shown. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to refer to like parts throughout the drawings. The drawings are only schematic and are not to be construed as limiting the actual dimensional proportions.
Figure 1 is a schematic diagram of a resonator according to the present invention;
FIG. 2 is a schematic diagram of a Bragg reflector layer according to the present invention;
fig. 3 is a schematic structural view of a resonator having n bragg reflectors according to the present invention;
FIG. 4 is a diagram of a parametric structural model of a resonator according to the present invention;
FIG. 5 is a graph showing the change of TCF value with Euler angle at room temperature of LGS;
FIG. 6 shows K at room temperature of LGSt 2Schematic plot of the variation with euler angle;
FIG. 7 is a diagram of the resonator admittance of a 1-layer Bragg reflector layer;
FIG. 8 is a diagram of the resonator admittance of a 2-layer Bragg reflector layer;
FIG. 9 is a diagram of the resonator admittance of a 3-layer Bragg reflector layer;
fig. 10 is a flow chart of the manufacturing process of the high-performance surface acoustic wave resonator based on the POI structure of the present invention.
Detailed Description
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which specific embodiments of the invention are shown. Various advantages and benefits of the present invention will become apparent to those of ordinary skill in the art upon reading the following detailed description of the specific embodiments. It should be understood, however, that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. The following embodiments are provided so that the invention may be more fully understood. Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by those of skill in the art to which this application belongs. The terms "front, back, up, down" and the like are used only for expressing relative positions without other limiting meanings.
Fig. 1 is a schematic diagram of a resonator having a bragg reflective layer according to the present invention, fig. 2 is a schematic diagram of a bragg reflective layer, and fig. 4 is a corresponding parametric structural model diagram of a resonator having a bragg reflective layer. This is explained first in conjunction with fig. 1, 2 and 4.
The resonator of the present invention comprises a substrate layer 101 of high acoustic velocity material, a low acoustic velocity LGS layer 102, a piezoelectric layer 103 and electrodes 104.
The substrate layer 101 is made of a high acoustic velocity material having a high acoustic impedance, and may be selected from AlN and Al2O3SiC, diamond, W. The substrate layer has a thickness of 5 λ (λ is the wavelength of the acoustic wave excited by the electrode fingers, λ is 1 μm).
On top of the high sound velocity substrate layer 101 is a low sound velocity LGS layer 102. The Euler angle of the LGS is 90 degrees, 90 degrees and 0 degrees, a layer of single crystal LGS (lanthanum gallium silicate) is plated on the substrate layer 101 of the high sound velocity material in a PECVD (plasma enhanced chemical vapor deposition), CVD (chemical vapor deposition), PVD (physical vapor deposition), MBE (molecular beam epitaxy) mode and the like to serve as a temperature compensation layer and a low sound velocity layer, the sound velocity is 2450m/s, and the low sound velocity layer has weak piezoelectric property. The thickness of the LGS layer 102 is 0.1 λ. The sound velocity of the substrate layer of the high sound velocity material is more than 3 times of that of the LGS layer with the low sound velocity
As shown in fig. 2, the low-sound-velocity LGS layer 102 and the high-sound-velocity substrate layer 101 together form a bragg reflection layer, which prevents the leakage of sound waves from the substrate direction, and can improve the Q value of the device.
The material of the piezoelectric layer 103 is single crystal 36 ° YX LiTaO3And a thickness of 0.5 lambda.
An interdigital transducer (IDT) electrode 104 is provided on the piezoelectric layer 103, and is formed by stacking Ti, Mo, and Al, the bottom layer is Ti, the top layer is Al, and the middle layer isThe layer is Mo. Coefficient of electromechanical coupling k2＝(π2/8)(fp2-fs2)/fs2Wherein fs is the resonance frequency and fp is the antiresonance frequency. The duty cycle of the electrodes may be selected from 0.5-0.6. The width of the electrodes and the spacing between the electrodes, both 0.25 lambda, are shown in fig. 4, and the electrodes are preferably completely embedded in the piezoelectric layer. The electrodes may not be embedded in the piezoelectric layer (not shown), the thickness of the electrodes is 180nm, the length len of the aperture of the electrodes is 10 λ, and the number of pairs of electrode fingers is 1000 pairs.
Fig. 1 and 4 show only one substrate layer of a high acoustic velocity material and one LGS layer of a low acoustic velocity. However, this may be multi-layered. Fig. 3 is a schematic structural diagram of a resonator with multiple (n) bragg reflective layers, where n may be 2-10 layers, and the substrate layers of high-sound-velocity material and the low-sound-velocity LGS layers are alternately stacked, and those skilled in the art can select the corresponding number of layers according to design needs.
FIG. 5 is a graph showing the change of TCF value with Euler angle at normal temperature of LGS.
The TCF value of LGS varies with euler angle (90 °,90 °, Φ) in the X-cut direction at normal temperature (T ═ 25 ℃), and as can be seen from the graph, the TCF value of LGS varies with the crystal tangent, and as Φ increases, the TCF value of LGS varies from 68ppm/° c to-15 ppm/° c, and when Φ is 40, the TCF is 68ppm/° c, which is the maximum value of the positive frequency temperature coefficient; when Φ is 140, TCF is-15 ppm/° c, the TCF value does not vary linearly with the Φ value. The invention takes phi as 0 and TCF as 45 ppm/DEG C.
FIG. 6 shows K at room temperature of LGSt 2Schematic plot of the change with euler angle.
K of LGSt 2The change of Euler angle (90 deg., phi) along the Y-cut direction is shown, and k of LGS is shownt 2As the crystal tangency varies, the k of the LGS increases with phit 2Varying between 0.01% and 0.39%, when Φ is 80-100, kt 20.01%, is kt 2Minimum value, at which LGS piezoelectricity is minimum; when phi is 180, kt 20.39% or kt 2Maximum value, where the LGS piezoelectricity is greatest. The invention takes LGS Euler angle (90)90 deg., 0) at which the LGS has the lowest piezoelectric properties and the introduced stray is the lowest.
Fig. 7 is an admittance diagram of the resonator when the number of bragg emission layers is 1.
As can be seen from the figure, fs is 4.616GHz, fp is 4.848GHz, and f0＝4.732GHz，k212.7%, relative bandwidth 5%, Q5401, high Q, and no spurs. FOM ═ k2Q and FOM are comprehensive indexes of the resonator, the FOM values of SAW and TC-SAW are generally less than 100, the FOM values of IHP SAW and FBAR are both less than 200, the resonator with the FOM value more than 200 is very rare, the FOM in the embodiment of the invention is 686, and the frequency temperature coefficient TCF (TCD) is 2.89 ppm/DEG C.
Fig. 8 is a resonator admittance diagram of a 2-layer bragg reflector layer.
As can be seen from the figure, fs is 4.611GHz, fp is 4.836GHz, and f0＝4.7235GHz，k212.32%, relative bandwidth 4.9%, Q5282, high Q, and no spurs, this example of the invention FOM 651, frequency temperature coefficient tcf (tcd) 2.89ppm/° c.
Fig. 9 is a resonator admittance diagram of a 3-layer bragg reflector layer.
As can be seen from the figure, fs is 4.613GHz, fp is 4.843GHz, f0＝4.728GHz，k212.6%, relative bandwidth 5%, Q5427, high Q, and no spurs, 684 for FOM for this example of the invention, 2.89 ppm/deg.c for the temperature coefficient of frequency tcf (tcd).
Fig. 10 is a flowchart of a manufacturing process of the high-performance surface acoustic wave resonator based on the POI structure of the present invention, which includes the following steps:
in step 1001, a high acoustic velocity material substrate layer is provided.
The high acoustic velocity material with high acoustic impedance can be AlN or Al2O3One of SiC, diamond, and W, the substrate layer has a thickness of 5 λ (λ is the wavelength of an acoustic wave excited by an electrode finger, and λ is 1 μm).
In step 1002, an LGS low acoustic velocity material layer is plated on the high acoustic velocity material substrate layer by PECVD, CVD, MOCVD, MBE, or the like.
The Euler angle of the LGS low-sound-velocity material layer is (90 DEG, 0 DEG); the thickness of the LGS layer was 0.1 λ.
The high-sound-velocity material substrate layer and the LGS low-sound-velocity material layer formed in the previous step jointly form a Bragg reflection layer, and the sound velocity of the high-sound-velocity material substrate layer is more than 3 times that of the LGS low-sound-velocity material layer. The person skilled in the art can choose a multilayer bragg reflector layer (which may preferably be 2-10 layers) according to the design needs. When the number n of layers is two or more, the process returns to step 1001 after the end step 1002 to form another bragg reflector layer. The process is cycled until n bragg reflective layers are formed.
At step 1003, a single crystal 36 ° YX LiTaO is formed over the uppermost LGS low acoustic velocity material layer3The piezoelectric layer of the high sound velocity material is 0.5 lambda thick.
In step 1004, IDT electrodes are formed on the piezoelectric layer. The IDT electrode is formed by laminating Ti, Mo and Al. The electrode duty cycle is 0.5-0.6, the electrodes may or may not be completely embedded in the piezoelectric layer, the electrode thickness is 180nm, the electrode length len ═ 10 λ along the aperture, and the number of pairs of electrode fingers is 1000 pairs.
The invention utilizes heterogeneous integration technology to convert LiTaO into LiTaO3The single crystal piezoelectric film is combined with a high-acoustic-velocity and high-heat-conduction substrate, a silicon carbide single crystal substrate is used as the substrate, the silicon carbide single crystal substrate has high acoustic velocity, special tangential single crystal LGS (lanthanum gallium silicate) is used as a temperature compensation layer and a low acoustic velocity layer, a POI structure and a Bragg reflection layer are formed with silicon carbide, the thickness, the width, the duty ratio and the aperture length of an electrode are adjusted, and the piezoelectric characteristic of the LGS is changed along with the tangential direction, so that the high-frequency low-insertion-loss high-FOM value and stray-free surface acoustic wave resonator can be
The frequency temperature coefficient of LGS is used for changing with the tangential direction to regulate LiNbO3The thicknesses of the piezoelectric layer and the LGS layer can enable the TCF value of the resonator to be close to zero.
The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present disclosure, and the present disclosure should be construed as being covered by the claims and the specification.
Claims (10)
1. A surface acoustic wave resonator comprising:
at least one Bragg reflection layer composed of a substrate layer of a high sound velocity material and a low sound velocity material layer formed on the substrate layer, wherein the substrate layer is 5 lambda thick, the low sound velocity material is LGS with Euler angles (90 degrees, 90 degrees and 0 degrees) of 0.1 lambda thick, and the sound velocity of the substrate layer is more than three times that of the low sound velocity material layer;
a single crystal 36 DEG YX LiTaO formed over the layer of low acoustic velocity material3A piezoelectric layer of thickness 0.5 λ; and
electrodes arranged on the piezoelectric layer, the duty ratio of the electrodes is 0.5-0.6,
where λ is the wavelength of the acoustic wave excited by the electrode.
2. The surface acoustic wave resonator according to claim 1, wherein the number n of bragg reflection layers is 1 to 10, n substrate layers and n low sound velocity material layers are alternately laminated, and the piezoelectric layer is formed on the low sound velocity material layer of the bragg reflection layer at the uppermost layer.
3. The surface acoustic wave resonator according to claim 1, wherein the high acoustic velocity material of the substrate layer is selected from AlN, Al2O3At least one of SiC, diamond, W, the layer of low acoustic velocity material is plated on the substrate layer by one of PECVD, CVD, PVD, MOCVD, MBE.
4. A surface acoustic wave resonator according to claim 1, wherein said electrode is an IDT electrode, which is a laminate of Ti, Mo, and Al, wherein the bottom layer is Ti, the middle layer is Mo, and the top layer is Al.
5. A surface acoustic wave resonator as set forth in claim 1, wherein said electrode is entirely buried in the piezoelectric layer.
6. A surface acoustic wave resonator as set forth in claim 1, wherein said electrode is not buried in the piezoelectric layer.
7. A surface acoustic wave resonator as set forth in claim 4, wherein said electrode thickness is 180nm, the electrode length along the aperture is 10 λ, and the number of pairs of electrode fingers is 1000 pairs.
8. A method for manufacturing a surface acoustic wave resonator, comprising:
providing a substrate layer of high acoustic velocity material having a thickness of 5 λ;
plating a low sound velocity material LGS with the thickness of 0.1 lambda Euler angle (90 degrees, 90 degrees and 0 degrees) on the substrate layer to form a low sound velocity material layer;
forming single crystal 36 ° YX LiTaO over the low acoustic velocity material layer3A piezoelectric layer of a high acoustic velocity material having a thickness of 0.5 λ; and
an IDT electrode is formed on the piezoelectric layer,
wherein λ is an acoustic wave wavelength excited by the IDT electrode.
9. The method of claim 8, wherein the step of plating the substrate layer with LGS is performed by one of PECVD, CVD, MOCVD, MBE, and the steps of providing the substrate layer and plating the LGS are repeated a plurality of times to form an alternating stack of n substrate layers and n layers, n not exceeding 10.
10. The method of claim 8, wherein the IDT electrode is formed by sequentially stacking Ti, Mo, and Al, wherein the bottom layer is Ti, the middle layer is Mo, and the top layer is Al.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114362710A (en) * | 2021-12-03 | 2022-04-15 | 中国科学院上海微系统与信息技术研究所 | an acoustic resonator |
| WO2023087211A1 (en) * | 2021-11-18 | 2023-05-25 | 华为技术有限公司 | Saw resonator and saw filter |
| CN117118388A (en) * | 2023-08-21 | 2023-11-24 | 天通瑞宏科技有限公司 | Multilayer composite wafer and thin film elastic wave device |
| WO2024001872A1 (en) * | 2022-06-30 | 2024-01-04 | 华为技术有限公司 | Surface acoustic wave filter, apparatus, and electronic device |
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| WO2024001872A1 (en) * | 2022-06-30 | 2024-01-04 | 华为技术有限公司 | Surface acoustic wave filter, apparatus, and electronic device |
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