CN112683404A - Metal micro Dewar vacuum structure of infrared detector - Google Patents
Metal micro Dewar vacuum structure of infrared detector Download PDFInfo
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- CN112683404A CN112683404A CN201910985856.1A CN201910985856A CN112683404A CN 112683404 A CN112683404 A CN 112683404A CN 201910985856 A CN201910985856 A CN 201910985856A CN 112683404 A CN112683404 A CN 112683404A
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- 239000002184 metal Substances 0.000 title claims abstract description 28
- 238000009413 insulation Methods 0.000 claims abstract description 98
- 230000003287 optical effect Effects 0.000 claims abstract description 48
- 239000011261 inert gas Substances 0.000 claims abstract description 20
- 239000003292 glue Substances 0.000 claims abstract description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 9
- 230000002035 prolonged effect Effects 0.000 abstract description 5
- 238000010943 off-gassing Methods 0.000 abstract description 3
- 238000005057 refrigeration Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 229920006335 epoxy glue Polymers 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
The application discloses a metal micro Dewar vacuum structure of an infrared detector, which comprises a vacuum heat insulation sleeve, a vacuum cavity and a vacuum cavity, wherein the vacuum heat insulation sleeve is a double-layer inner vacuum structure, an optical window is arranged at one end of the vacuum heat insulation sleeve, and an opening is arranged at the opposite end of the optical window; the core column is columnar; one end of the core column extends into the inner space of the vacuum heat insulation sleeve through the opening of the vacuum heat insulation sleeve, and the other end of the core column is hermetically attached to the shell of the vacuum heat insulation sleeve; the infrared detector chip is stuck on the end part of one end of the core column extending into the inner space of the heat insulation sleeve. The vacuum heat insulation sleeve is of a double-layer inner vacuum structure, and the stability of the Dewar vacuum degree in a long time is guaranteed. The infrared detector assembly works in an inert gas environment, and the vacuum degree of the dewar cannot be influenced by the outgassing of glue used when the infrared detector chip is adhered to the cold plate on the core column. The two factors ensure that the Dewar vacuum degree is kept stable for a long time, so that the infrared detector assembly has obviously prolonged service life and storage life compared with the infrared detector assembly packaged by the traditional vacuum Dewar.
Description
Technical Field
The invention relates to the field of infrared detectors, in particular to a metal micro Dewar vacuum structure of an infrared detector.
Background
The metal micro Dewar is mainly applied to a refrigeration type semiconductor infrared detector. The refrigeration type semiconductor infrared detector is a sensor for simultaneously realizing acquisition of infrared information and information processing, and has wide application in military and civil fields.
The working temperature of the refrigeration type semiconductor infrared detector chip is generally between 77K and 150K according to different types, a J-T refrigerator or a Stirling refrigerator is adopted as the refrigeration mode, the output power of the two refrigeration modes is a determined value and is generally small under the condition of specified volume and weight, so the refrigeration type semiconductor infrared detector chip needs to be packaged in a miniature Dewar if the refrigeration type semiconductor infrared detector chip needs to continuously work, and then the chip is refrigerated. The role of the micro-dewar is to provide a packaging and thermal isolation environment for the semiconductor chip.
Fig. 1 shows a prior art metal micro-dewar structure, which mainly comprises a stem 105, a shell 102 and an optical window 101. The stem 105 is made of a material with good heat insulation, and the shell 102 and the stem 105 are generally connected together by welding. The housing 102, stem 105, and optical window 101 form a vacuum chamber therebetween.
The main problems of the existing vacuum metal micro-Dewar are as follows: (1) the infrared detector chip cannot resist high temperature, so the Dewar can only heat the assembly to below 100 ℃ generally during vacuumizing and exhausting, so that a large amount of gas molecules are in the internal material of the Dewar, and the Dewar can gradually deflate in the using and storing processes, so that the vacuum degree of the Dewar is reduced, and the heat power consumption of the infrared detector assembly is increased; (2) the infrared detector chip and cold shield need to be bonded to the cold plate above stem 105 with glue that also outgases in a vacuum environment and also causes the dewar to lose vacuum.
Under the combined action of the two factors, the dewar can increase the power consumption of the detector assembly after being used for a long time and cannot be refrigerated to the working temperature, so that the infrared detector assembly fails. In addition, in the process of vacuumizing and exhausting, the time for baking and heating the whole assembly is more than 360 hours, which can cause the performance degradation of the chip, reduce the packaging yield of the detector chip and influence the use and storage life of the detector.
Disclosure of Invention
The invention provides a metal micro-Dewar vacuum structure of an infrared detector, which aims to solve the problems that the yield of metal micro-Dewar packaging cannot be improved and the service life and storage life of an infrared detector assembly cannot be prolonged in the prior art.
The invention provides a metal micro Dewar vacuum structure of an infrared detector, which is characterized by comprising: a vacuum heat insulation sleeve, a core column and an infrared detector chip;
the vacuum heat insulation sleeve is of a double-layer inner vacuum structure, an optical window is arranged at one end of the vacuum heat insulation sleeve, and an opening is arranged at the opposite end of the optical window;
the core column is columnar; one end of the core column extends into the inner space of the vacuum heat-insulating sleeve through an opening of the vacuum heat-insulating sleeve, and the other end of the core column is in sealing fit with the vacuum heat-insulating sleeve shell;
the infrared detector chip is adhered to one end part of the core column extending into the inner space of the heat insulation sleeve.
Optionally, the vacuum heat insulation sleeve is a double-layer inner vacuum structure, and an optical window is arranged at one end of the vacuum heat insulation sleeve, specifically, the optical window is arranged on one layer of the outer side of the double-layer inner vacuum structure of the vacuum heat insulation sleeve, and the optical window is arranged on one layer of the inner side.
Optionally, the filter, the cold screen, and the infrared detector chip are stacked in sequence from top to bottom at an end of the core column extending into the inner space of the heat insulating sleeve.
Optionally, the vacuum heat insulation sleeve is a double-layer inner vacuum structure, and an optical window is arranged at one end of the vacuum heat insulation sleeve, specifically, the optical window is arranged on one layer of the outer side of the double-layer inner vacuum structure of the vacuum heat insulation sleeve, and the optical filter is arranged on one layer of the inner side.
Optionally, the end part, attached to the core column, of the infrared detector chip, extending into the inner space of the heat insulating sleeve is specifically a lead wire arranged at the other end of the core column, and the lead wire extends along the extending direction of the core column and is fixedly connected to the infrared detector chip on the core column.
Optionally, one side of the vacuum heat-insulating sleeve is provided with an exhaust hole, and the exhaust hole is connected with a special exhaust device and used for exhausting the vacuum heat-insulating sleeve.
Optionally, the vacuum insulation sleeve is filled with an inert gas, and is filled by a vent hole arranged at the bottom of the stem, wherein the inert gas includes: nitrogen, argon.
Optionally, the vacuum insulation sleeve is filled with inert gas for preventing the infrared detector chip from surface frosting.
Optionally, the bottom of the core column is provided with a vent hole for injecting inert gas when preparing the double-inner-layer vacuum structure of the vacuum heat insulation sleeve.
Optionally, one end of the core column extends into the inner space of the vacuum heat insulation sleeve through the opening of the vacuum heat insulation sleeve, and the other end of the core column is in sealing fit with the vacuum heat insulation sleeve.
Compared with the prior art, the invention has the following advantages: the application provides a metal micro Dewar vacuum structure of an infrared detector, which comprises a vacuum heat insulation sleeve which is a double-layer inner vacuum structure, wherein an optical window is arranged at one end of the vacuum heat insulation sleeve, and an opening is arranged at the opposite end of the optical window; the core column is columnar; one end of the core column extends into the inner space of the vacuum heat insulation sleeve through the opening of the vacuum heat insulation sleeve, and the other end of the core column is hermetically attached to the shell of the vacuum heat insulation sleeve; the infrared detector chip is stuck on the end part of one end of the core column extending into the inner space of the heat insulation sleeve.
The vacuum heat-insulating sleeve is of a double-layer inner vacuum structure and is assembled with the core column containing the detector device after the heat-insulating sleeve is exhausted, so that the Dewar can be heated to 300 ℃ during vacuumizing and exhausting, gas molecules on the inner surface of the double-inner-layer vacuum structure of the vacuum heat-insulating sleeve are effectively removed, the gas release of the infrared detector assembly in the using and storing process is reduced, and the vacuum degree of the Dewar is guaranteed to be kept stable for a long time. The infrared detector assembly works in an inert gas environment, and the air release of glue adopted by the infrared detector chip adhered to the cold plate on the core column does not influence the vacuum degree of the dewar, so that the power consumption of the dewar is not influenced. The two characteristic factors ensure that the Dewar vacuum degree is kept stable for a long time, so that the infrared detector assembly has obviously prolonged service life and storage life compared with the infrared detector assembly packaged by the traditional vacuum Dewar.
Drawings
FIG. 1 is a schematic longitudinal cross-sectional view of a prior art metal micro-Dewar configuration;
wherein, the optical window 101, the outer shell 102, the ceramic lead wire ring 103, the exhaust hole 104, the stem 105, the positioning screw hole 106;
FIG. 2 is a schematic longitudinal sectional view showing a structure of a vacuum insulation jacket in a metal micro Dewar vacuum structure of an infrared detector according to a first embodiment of the present invention;
FIG. 3 is a schematic longitudinal cross-sectional view of a metal micro-Dewar vacuum structure of an infrared detector according to a first embodiment of the present disclosure;
the device comprises an optical window (1)301, an optical window (2)302, a vacuum heat insulation sleeve 303, an exhaust hole 304, a core column 305, an infrared detector chip 306, an optical filter 307 and a cold screen 308; in fig. 2 and 3, like reference numerals designate like elements of the drawings;
FIG. 4 is a schematic longitudinal cross-sectional view of a metal micro-Dewar vacuum structure of an infrared detector according to a second embodiment of the present application;
the infrared detector comprises an optical window 401, a filter 402, a vacuum insulation sleeve 403, an exhaust hole 404, a core column 405 and an infrared detector chip 406.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, but rather construed as limited to the embodiments set forth herein.
The embodiment of the application provides a metal micro-Dewar vacuum structure of an infrared detector, and fig. 2 is a longitudinal section schematic diagram of a structure diagram of a vacuum heat insulation sleeve in the metal micro-Dewar vacuum structure of the infrared detector provided by the first embodiment of the application. Fig. 3 is a schematic longitudinal cross-sectional view of a metal micro-dewar vacuum structure of an infrared detector according to a first embodiment of the present application.
Referring to fig. 3, a metal micro-dewar vacuum structure of an infrared detector provided in a first embodiment of the present application includes: a vacuum insulation sleeve 303, a core column 305 and an infrared detector chip 306.
The vacuum heat insulation sleeve 303 is a double-layer internal vacuum structure, an optical window 301 is arranged at one end of the vacuum heat insulation sleeve, and an opening is arranged at the opposite end of the optical window 301; in the present embodiment, the vacuum insulation jacket 303 provided with the optical window 301 at one end thereof is provided in two structures; the following first embodiment explains the first structure.
Specifically, as shown in fig. 3, the vacuum insulation sleeve 303 is a double-layer internal vacuum structure, an optical window is arranged at one end of the vacuum insulation sleeve, specifically, an optical window (1)301 is arranged on one layer of the outer side of the double-layer internal vacuum structure of the vacuum insulation sleeve 303, an optical window (2)302 is arranged on one layer of the inner side of the double-layer internal vacuum structure of the vacuum insulation sleeve 303, and the optical window (1)301 and the optical window (2)302 are welded with the outer shell of the vacuum insulation sleeve 303 in a diffusion welding mode.
In addition, the filter 307 is placed on a cold shield 308 above the stem 305, as shown in fig. 3. One end of the core column 305 extends into the inner space of the vacuum heat insulation sleeve 303 through the opening of the vacuum heat insulation sleeve 303, and the other end is hermetically attached to the outer shell of the vacuum heat insulation sleeve 303; the core column 305 and the vacuum heat insulation sleeve 303 are sealed and attached by adopting glue, and the adopted glue adopts different epoxy glue according to different refrigeration modes. The end of the core column 305 extending into the inner space of the vacuum insulation cover 303 is stacked with the filter 307, the cold shield 308 and the infrared detector chip 306 from top to bottom.
The infrared detector chip 306 is attached to an end of the stem 305 extending into the space inside the vacuum insulation cover 303. On one hand, the infrared detector chip 306 is adhered to one end of the core column 305 extending into the inner space of the vacuum insulation sleeve 303 by glue, wherein the glue used is different epoxy glue according to different refrigeration modes. On the other hand, a lead wire is provided at the other end of the stem 305, the lead wire extends along the extending direction of the stem 305, and is fixedly connected with the infrared detector chip 306 on the stem 305, and specifically, the infrared detector chip 306 is fixed on a cold plate (not shown) at the other end of the stem 305 by the lead wire extending to the bottom of the stem 305.
In the prior art, the way of fixing the infrared detector chip to the stem is mostly the way as shown in fig. 1, and two ceramic lead rings 103 are respectively connected to the infrared detector chip by one end of a lead, and one end is fixed to two sides of the case 102. In this manner, the leads conduct heat from the enclosure directly to the cold plate, resulting in increased heat loss from the dewar, and failure of the assembly due to the leads being in a suspended state and being easily disconnected when the assembly is subjected to vibration and external shock. Therefore, the infrared detector chip 306 of the first embodiment of the present application is fixed on the stem 305, the lead is fixed on the stem, and the lead is longer, and the thermal conductivity is poorer, so that the lead can be led out in a manner of higher reliability and less increase of heat consumption of the dewar compared with the traditional dewar.
In particular, in the process of preparing the metal micro-Dewar vacuum structure of the infrared detector, the core column 305 and the shell of the vacuum heat insulation sleeve 303 are adhered together by adopting glue, wherein the glue adopted adopts different epoxy glue according to different refrigeration modes. In addition, in order to better fully exhaust the vacuum heat insulation sleeve 303 and facilitate the subsequent filling of inert gas into the Dewar, one side of the vacuum heat insulation sleeve 303 is provided with an exhaust hole 304, and the exhaust hole 304 is connected with special exhaust equipment. The vacuum heat-insulating sleeve 303 is a double-layer internal vacuum structure, so that the Dewar can be heated while vacuumizing and exhausting, the heating temperature can be controlled to be about 300 ℃, the exhausting time is not less than 240 hours, when the vacuum degree of the Dewar is better than 10E-11Pa, the exhausting is finished in the Dewar, and the exhaust hole is sealed by using cold sealing pliers. Therefore, the Dewar is heated at high temperature during vacuumizing and exhausting, gas molecules on the inner surface in the double-inner-layer vacuum structure of the vacuum heat insulation sleeve 303 are effectively removed, and air release of the infrared detector assembly in the use and storage process is reduced, so that the Dewar vacuum degree is kept stable for a long time.
Further, the bottom of the stem 305 is provided with a vent hole for air inflation between the stem 305 and the vacuum insulation sleeve 303. Inert gas is filled into the dewar through the vent hole at the bottom of the core column 305, the main function of the inert gas is to reduce water vapor in the dewar, and the infrared detector chip 306 is refrigerated without surface frosting. Wherein the inert gas comprises nitrogen and argon. In the dewar manufacturing process, after the dewar is filled with nitrogen gas from the vent hole at the bottom of the stem 305, the vent hole is closed.
This is the first structure in which the vacuum insulation jacket 303 has a double-layer internal vacuum structure and the optical window 301 is provided at one end thereof. In the embodiment, the vacuum heat-insulating sleeve 303 is of a double-layer inner vacuum structure, so that the Dewar can be heated to 300 ℃ during vacuumizing and exhausting, gas molecules on the inner surface of the double-inner-layer vacuum structure of the vacuum heat-insulating sleeve 303 are effectively removed, air release of the infrared detector assembly in the using and storing processes is reduced, and the Dewar vacuum degree is guaranteed to be kept stable for a long time. The infrared detector assembly operates in an inert gas environment, and the outgassing of the glue used to bond the infrared detector chip 306 to the cold plate (not shown) above the stem 305 does not affect the dewar's vacuum, nor does it affect the dewar's power consumption. The two characteristic factors ensure that the Dewar vacuum degree is kept stable for a long time, so that the infrared detector assembly has obviously prolonged service life and storage life compared with the infrared detector assembly packaged by the traditional vacuum Dewar.
The second structure is mainly different from the first structure in that the vacuum insulation cover 403 has a double-layer internal vacuum structure and the optical window 401 is disposed at one end thereof, and the optical window 401 and the optical filter 402 are fixed to the outer side and the inner side of the vacuum insulation cover 403 by welding. Fig. 4 is a schematic longitudinal cross-sectional view of a metal micro-dewar vacuum structure of an infrared detector according to a second embodiment of the present application.
Referring to fig. 4, a metal micro-dewar vacuum structure of an infrared detector provided in a second embodiment of the present application includes: vacuum insulation cover 403, core column 405, infrared detector chip 406.
Wherein, the vacuum insulation sleeve 403 is a double-layer internal vacuum structure, an optical window 401 is arranged at one end of the vacuum insulation sleeve, and an opening is arranged at the opposite end of the optical window 401; in the present embodiment, the vacuum insulation jacket 403 provided with the optical window 401 at one end thereof is provided in two structures; the following second embodiment explains the second structure.
Specifically, as shown in fig. 4, the vacuum insulation cover 403 is a double-layer internal vacuum structure, an optical window 401 is disposed at one end of the vacuum insulation cover, specifically, the optical window 401 is disposed on one outer layer of the double-layer internal vacuum structure of the vacuum insulation cover 403, the optical filter 402 is disposed on one inner layer, and the optical window 401 and the optical filter 402 are welded to the vacuum insulation cover 403 by diffusion welding.
Further, as shown in fig. 4, one end of the stem 405 is extended into the internal space of the vacuum insulation cover 403 through the opening of the vacuum insulation cover 403, and the other end is hermetically attached to the outer shell of the vacuum insulation cover 403; the core column 405 and the vacuum insulation sleeve 403 are sealed and attached by adopting glue, and the adopted glue adopts different epoxy glue according to different refrigeration modes. The end of the stem 405 extending into the vacuum insulation cover 403 is stacked with a cold shield (not shown) and an infrared detector chip 406 from top to bottom.
The infrared detector chip 406 is attached to an end of the stem 405 extending into the space inside the vacuum insulation cover 403. On one hand, the infrared detector chip 406 is adhered to one end of the core column 405 extending into the inner space of the vacuum insulation sleeve 403 by glue, wherein the glue used is different epoxy glue according to different refrigeration modes. On the other hand, a lead wire is provided at the other end of the stem 405, the lead wire extends along the extending direction of the stem 405 and is fixedly connected with the infrared detector chip 406 on the stem 405, and specifically, the infrared detector chip 406 is fixed on a cold plate (not shown) at the other end of the stem 405 by the lead wire extending to the bottom of the stem 405.
In the prior art, the way of fixing the infrared detector chip to the stem is mostly the way as shown in fig. 1, and two ceramic lead rings 103 are respectively connected to the infrared detector chip by one end of a lead, and one end is fixed to two sides of the case 102. In this manner, the leads conduct heat from the enclosure directly to the cold plate, resulting in increased heat loss from the dewar, and failure of the assembly due to the leads being in a suspended state and being easily disconnected when the assembly is subjected to vibration and external shock. Therefore, the infrared detector chip 406 in the first embodiment of the present application is fixed to the stem 405, and the lead is fixed to the stem, and the lead is relatively long, so that the thermal conductivity is relatively poor, and therefore, compared with the traditional dewar, the lead is led out in a manner of higher reliability and less increase of heat consumption of the dewar.
In particular, in the process of preparing the metal micro Dewar vacuum structure of the infrared detector, the core column 405 and the shell of the vacuum heat insulation sleeve 403 are adhered together by glue, wherein the glue used adopts different epoxy glue according to different refrigeration modes. In addition, in order to better fully exhaust the vacuum insulation sleeve 403 and facilitate the subsequent filling of inert gas into the dewar, one side of the vacuum insulation sleeve 403 is provided with an exhaust hole 404, and the exhaust hole 404 is connected with a special exhaust device. The vacuum heat-insulating sleeve 403 is a double-layer internal vacuum structure, so that the Dewar can be heated while vacuumizing and exhausting, the heating temperature can be controlled to be about 300 ℃, the exhausting time is not less than 240 hours, when the vacuum degree of the Dewar is better than 10E-11Pa, the exhausting is finished in the Dewar, and the exhaust hole is sealed by using cold sealing pliers. Therefore, the Dewar is heated at high temperature during vacuumizing and exhausting, gas molecules on the inner surface in the double-inner-layer vacuum structure of the vacuum heat insulation sleeve 403 are effectively removed, and air release of the infrared detector assembly in the use and storage process is reduced, so that the Dewar vacuum degree is kept stable for a long time.
Further, the bottom of the stem 405 is provided with a vent hole for air inflation between the stem 405 and the vacuum insulation cover 403. Inert gas is filled into the dewar through the vent hole at the bottom of the core column 405, the main function of the inert gas is to reduce water vapor in the dewar, and surface frosting cannot occur after the infrared detector chip 406 is refrigerated. Wherein the inert gas comprises nitrogen and argon. In the process of manufacturing the Dewar, after the Dewar is filled with nitrogen gas from the vent hole at the bottom of the core column 405, the vent hole is closed.
This is the second structure in which the vacuum insulation jacket 403 has a double-layer internal vacuum structure and the optical window 401 is provided at one end thereof. In the embodiment, the vacuum heat-insulating sleeve 403 is of a double-layer inner vacuum structure, so that the Dewar can be heated to 300 ℃ during vacuumizing and exhausting, gas molecules on the inner surface of the double-inner-layer vacuum structure of the vacuum heat-insulating sleeve 403 can be effectively removed, and air release of the infrared detector assembly in the use and storage processes is reduced, so that the Dewar vacuum degree is kept stable for a long time. The infrared detector assembly operates in an inert gas environment, and the outgassing of the glue used to bond the infrared detector chip 406 to the cold plate (not shown) above the stem 405 does not affect the dewar's vacuum, nor does it affect the dewar's power consumption. The two characteristic factors ensure that the Dewar vacuum degree is kept stable for a long time, so that the infrared detector assembly has obviously prolonged service life and storage life compared with the infrared detector assembly packaged by the traditional vacuum Dewar.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto, and variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.
Claims (10)
1. A little dewar vacuum structure of infrared detector's metal, its characterized in that includes: a vacuum heat insulation sleeve, a core column and an infrared detector chip;
the vacuum heat insulation sleeve is of a double-layer inner vacuum structure, an optical window is arranged at one end of the vacuum heat insulation sleeve, and an opening is arranged at the opposite end of the optical window;
the core column is columnar; one end of the core column extends into the inner space of the vacuum heat-insulating sleeve through an opening of the vacuum heat-insulating sleeve, and the other end of the core column is in sealing fit with the vacuum heat-insulating sleeve shell;
the infrared detector chip is adhered to one end part of the core column extending into the inner space of the heat insulation sleeve.
2. The metallic micro-Dewar vacuum structure for infrared detector of claim 1, characterized in that the vacuum insulation jacket is a double-layer inner vacuum structure with an optical window at one end, specifically the outer layer of the double-layer inner vacuum structure of the vacuum insulation jacket is provided with an optical window and the inner layer is provided with an optical window.
3. The metallic micro-Dewar vacuum structure for infrared detector of claim 1 or 2, characterized in that the end of the stem extending into the inner space of the vacuum heat insulating sheath is stacked with the filter, the cold shield and the infrared detector chip from top to bottom.
4. The metallic micro-Dewar vacuum structure for infrared detector of claim 1, characterized in that the vacuum heat insulation jacket is a double-layer inner vacuum structure, and an optical window is arranged at one end of the vacuum heat insulation jacket, specifically, the optical window is arranged on the outer layer of the double-layer inner vacuum structure of the vacuum heat insulation jacket, and the optical filter is arranged on the inner layer.
5. The metal micro-Dewar vacuum structure of an infrared detector of claim 1, wherein the infrared detector chip is adhered to one end of the stem extending into the inner space of the heat insulating sleeve, specifically, a lead is provided at the other end of the stem, and the lead extends along the extending direction of the stem and is fixedly connected with the infrared detector chip on the stem.
6. The metallic micro-Dewar vacuum structure for infrared detector of claim 1, characterized in that one side of the vacuum heat insulation jacket is provided with a vent hole, and the vent hole is connected with a special exhaust device for exhausting the vacuum heat insulation jacket.
7. The metal micro-Dewar vacuum structure of infrared detector of claim 1, characterized in that the vacuum insulation cover is filled with inert gas filled by a vent hole provided at the bottom of the stem, wherein the inert gas comprises: nitrogen, argon.
8. The metallic micro-dewar vacuum structure of the infrared detector as set forth in claim 1, wherein the vacuum insulation jacket is filled with inert gas for preventing surface frost formation of the infrared detector chip.
9. The metal micro-Dewar vacuum structure for infrared detector of claim 1 or 7, which is characterized in that the bottom of the stem is provided with a vent hole for filling inert gas when preparing the double inner layer vacuum structure of the vacuum heat insulation sleeve.
10. The metal micro-Dewar vacuum structure for infrared detector of claim 1, wherein one end of the stem extends into the inner space of the vacuum heat insulation sleeve through the opening of the vacuum heat insulation sleeve, and the other end is tightly attached to the vacuum heat insulation sleeve, in particular, the other end of the stem is tightly attached to the vacuum heat insulation sleeve by glue.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113339702A (en) * | 2021-07-01 | 2021-09-03 | 段娜 | Refrigerating system and liquid helium dewar bottle gas protection device |
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| CN211347102U (en) * | 2019-10-17 | 2020-08-25 | 北京弘芯科技有限公司 | Metal micro Dewar vacuum structure of infrared detector |
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2019
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| RU53772U1 (en) * | 2006-02-28 | 2006-05-27 | Закрытое акционерное общество "Матричные технологии" | INFRARED RADIATION RECEIVER (OPTIONS) |
| RU64744U1 (en) * | 2007-04-05 | 2007-07-10 | Открытое акционерное общество "Московский завод "САПФИР" | CRYOSTAT FOR INFRARED RADIATION RECEIVER |
| CN206179845U (en) * | 2016-11-04 | 2017-05-17 | 北京有色金属研究总院 | Composite films lead wire type metal dewar |
| RU192540U1 (en) * | 2019-07-23 | 2019-09-23 | Акционерное общество "Московский завод "САПФИР" | Cooled planar photodiode based on indium antimonide crystals |
| CN211347102U (en) * | 2019-10-17 | 2020-08-25 | 北京弘芯科技有限公司 | Metal micro Dewar vacuum structure of infrared detector |
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| CN113339702A (en) * | 2021-07-01 | 2021-09-03 | 段娜 | Refrigerating system and liquid helium dewar bottle gas protection device |
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