CN112687722B - Display backboard, preparation method thereof and display panel - Google Patents
Display backboard, preparation method thereof and display panel Download PDFInfo
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- CN112687722B CN112687722B CN202011548943.XA CN202011548943A CN112687722B CN 112687722 B CN112687722 B CN 112687722B CN 202011548943 A CN202011548943 A CN 202011548943A CN 112687722 B CN112687722 B CN 112687722B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000010410 layer Substances 0.000 claims abstract description 426
- 229910052751 metal Inorganic materials 0.000 claims abstract description 192
- 239000002184 metal Substances 0.000 claims abstract description 192
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000011229 interlayer Substances 0.000 claims abstract description 44
- 238000000059 patterning Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical group [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 14
- 239000010408 film Substances 0.000 description 12
- 238000002310 reflectometry Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
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Abstract
The invention provides a display backboard and a preparation method thereof, and a display panel, wherein the display backboard comprises a substrate, a first metal layer, an interlayer dielectric layer, a second metal layer, an additional metal layer, an antireflection layer and a flat layer, the second metal layer and the additional metal layer are arranged on one side of the interlayer dielectric layer far away from the substrate, the antireflection layer is arranged on one side of the second metal layer far away from the substrate, the flat layer covers the second metal layer, the additional metal layer is arranged corresponding to the first metal layer, so that the thickness of the flat layer above the first metal layer is equal to the thickness of the flat layer above the second metal layer, and the influence of film interference phenomenon generated by the flat layer above metal wires of different film layers on the antireflection effect can be avoided by preparing the additional metal layer arranged on the same layer as the second metal layer.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display backboard, a preparation method thereof and a display panel.
Background
Since a plurality of metal wires exist in a Micro Light-Emitting Diode (Micro-LED) display back panel or an Organic Light-Emitting Diode (OLED) display back panel, the problem of reflectivity polarization of a screen can be caused, so that the actual viewing effect is affected, the reflection of the screen is usually reduced by using a black matrix or black oil shielding metal wire or by using a circular polarizer, however, the defects of reducing the aperture ratio, increasing the experimental process, lowering the coating precision and the like exist in the mode of shielding the metal wire by using the black matrix or the black oil, the defects of reducing the brightness of emergent Light and the like exist in the mode of using the circular polarizer, and the defects of reducing the brightness of emergent Light and the like exist in the mode of using the thin film interference principle in the prior art.
In view of the foregoing, it is desirable to provide a novel display back plate, a manufacturing method thereof, and a display panel, so as to solve the above-mentioned technical problems.
Disclosure of Invention
The display backboard, the preparation method thereof and the display panel provided by the invention solve the technical problem that when the existing display backboard utilizes film interference to reduce reflectivity, the final anti-reflection effect is affected due to inconsistent thickness of films above metal wires of different film layers.
In order to solve the problems, the technical scheme provided by the invention is as follows:
an embodiment of the present invention provides a display back plate, including:
a substrate;
the first metal layer is arranged on the substrate;
an interlayer dielectric layer covering the first metal layer;
the second metal layer and the additional metal layer are arranged on one side of the interlayer dielectric layer, which is far away from the substrate; the anti-reflection layer is arranged on one side of the second metal layer away from the substrate; and
a planarization layer covering the second metal layer;
wherein the additional metal layer is disposed corresponding to the first metal layer such that a thickness of the flat layer over the first metal layer is equal to a thickness of the flat layer over the second metal layer.
According to the display backboard provided by the embodiment of the invention, the display backboard further comprises:
a light shielding layer disposed on the substrate;
a buffer layer covering the light shielding layer and the substrate;
an active layer disposed on the buffer layer;
a gate insulating layer overlying the active layer and the buffer layer;
the grid electrode layer is arranged on the grid electrode insulating layer; and
the source electrode and the drain electrode are arranged on the interlayer dielectric layer, are connected to the active layer through a first via hole and a second via hole respectively, and are connected to the shading layer through a third via hole;
wherein the first metal layer includes the gate layer and the second metal layer includes the source and the drain.
According to the display backboard provided by the embodiment of the invention, the orthographic projection of the additional metal layer on the substrate covers the orthographic projection of the first metal layer on the substrate.
According to the display backboard provided by the embodiment of the invention, the additional metal layer is connected with the first metal layer through the fourth via hole arranged on the flat layer.
According to the display backboard provided by the embodiment of the invention, the material of the anti-reflection layer is molybdenum oxide.
According to the display backboard provided by the embodiment of the invention, the display backboard is a Micro-LED display backboard or an OLED display backboard.
The embodiment of the invention provides a display panel, which comprises the display backboard.
The embodiment of the invention provides a preparation method of a display backboard, which comprises the following steps:
s10: providing a substrate, and forming a first metal layer on the substrate;
s20: forming an interlayer dielectric layer on the first metal layer;
s30: forming a second metal layer and an additional metal layer on the interlayer dielectric layer, wherein the additional metal layer is arranged corresponding to the first metal layer;
s40: forming an anti-reflection layer on one side of the second metal layer and the additional metal layer away from the substrate; and
s50: and forming a flat layer on the anti-reflection layer, wherein the flat layer covers the interlayer dielectric layer, the second metal layer, the additional metal layer and the anti-reflection layer, and the thickness of the flat layer above the second metal layer is equal to that of the flat layer above the additional metal layer.
According to the method for preparing the display backboard provided by the embodiment of the invention, in the step of preparing the display backboard, the method further comprises the following steps:
patterning a light shielding layer on the substrate;
forming a buffer layer on the light shielding layer and the substrate;
patterning an active layer on the buffer layer;
patterning a gate insulating layer on the active layer;
patterning a gate electrode layer on the gate insulating layer;
forming the interlayer dielectric layer on the gate layer, the active layer and the buffer layer;
patterning on the interlayer dielectric layer to form a source electrode and a drain electrode connected with the active layer;
patterning the interlayer dielectric layer to form the additional metal layer;
forming the anti-reflection layer on the source electrode and the drain electrode and the additional metal layer; and
the planarization layer is formed on the source electrode, the drain electrode, and the additional metal layer and the anti-reflection layer.
According to the manufacturing method of the display backboard provided by the embodiment of the invention, the second metal layer and the additional metal layer are manufactured by adopting the same process.
The beneficial effects of the invention are as follows: according to the display backboard, the preparation method thereof and the display panel, the additional metal layer which is arranged on the same layer as the second metal layer is prepared, and the additional metal layer is arranged opposite to the first metal layer, so that the thickness of the flat layer above the first metal layer is consistent with the thickness of the flat layer above the second metal layer, the influence of film interference phenomenon generated by the flat layers above metal wires of different film layers on the anti-reflection effect is avoided, and the anti-reflection effect of the display panel can be optimized.
Drawings
In order to more clearly illustrate the embodiments or the technical solutions in the prior art, the following description will briefly introduce the drawings that are needed in the embodiments or the description of the prior art, it is obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of a display back plate according to an embodiment of the present invention;
FIG. 2 is a graph of thickness versus reflectivity of an anti-reflective layer according to an embodiment of the present invention;
FIG. 3 is a flowchart of a method for manufacturing a display back plate according to an embodiment of the present invention;
fig. 3A to 3E are schematic flow chart structures of a method for manufacturing a display back plate according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments refers to the accompanying drawings, which illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., are only referring to the directions of the attached drawings. Accordingly, directional terminology is used to describe and understand the invention and is not limiting of the invention. In the drawings, like elements are designated by like reference numerals.
The invention aims at solving the defect that when the display backboard in the prior art utilizes thin film interference to reduce the reflectivity, the final anti-reflection effect can be affected due to the inconsistent thickness of the flat layer above the metal wires of different film layers.
Referring to fig. 1, the display back plate provided in the embodiment of the invention includes a substrate 101, a first metal layer 107, an interlayer dielectric layer 105, a second metal layer 108, an additional metal layer 109, an anti-reflection layer 110 and a flat layer 111, wherein the first metal layer 107 is disposed on the substrate 101, the interlayer dielectric layer 105 covers the first metal layer 107, the second metal layer 108 and the additional metal layer 109 are disposed on a side of the interlayer dielectric layer 105 away from the substrate 101, the anti-reflection layer 110 is disposed on a side of the second metal layer 108 away from the substrate 101, and the flat layer 111 covers the second metal layer 108.
Because the light can generate thin film interference when passing through the anti-reflection layer 110, the reflection light formed by the anti-reflection layer 110 and the reflection light formed by the first metal layer 107 and the second metal layer 108 can reduce the reflection light of the display backboard through the interference cancellation effect of the light, thereby reducing the reflectivity and improving the display quality of the picture.
The interlayer dielectric layer 105 and the flat layer 111 are made of one or more of silicon oxide, silicon nitride and silicon oxynitride, and the thickness of the thin film layers such as the interlayer dielectric layer 105 and the flat layer 111 is about several hundred nanometers, so that light can have relatively obvious thin film interference phenomenon in the interlayer dielectric layer 105 and the flat layer 111 to affect the reflectivity, and the inconsistent thickness of the interlayer dielectric layer 105 and the flat layer 111 above the metal wires of different film layers can lead to different antireflection effects of the antireflection layer 110 on the light. In the embodiment of the present invention, the additional metal layer 109 and the second metal layer 108 are arranged in the same layer, and the additional metal layer 109 is arranged corresponding to the first metal layer 107, on the one hand, since the thickness of the additional metal layer 109 is about several hundred nanometers, no light substantially passes through the additional metal layer 109 to reach the interlayer dielectric layer 105, and therefore the interlayer dielectric layer 105 above the first metal layer 107 will not affect the anti-reflection effect; on the other hand, the additional metal layer 109 is disposed, so that the thickness of the flat layer 111 above the first metal layer 107 is equal to the thickness of the flat layer 111 above the second metal layer 108, thereby avoiding the occurrence of the phenomenon of different anti-reflection effects caused by inconsistent thicknesses of the flat layers 111 above the metal wires of different film layers.
Further, the display back plate further includes a light shielding layer 102, a buffer layer 103, an active layer 104, a gate insulating layer 106, a gate layer 1071, a source 1081, and a drain 1082; specifically, the light shielding layer 102 is disposed on the substrate 101, and is used for shielding light, so as to effectively avoid light leakage of the display backboard; the buffer layer 103 is disposed on the substrate 101, and is configured to slow down an impact force of vibration on the display backboard during a moving process; the active layer 104 is disposed on the buffer layer 103, the material of the active layer 104 may be indium gallium zinc oxide (indium gallium zinc oxide, IGZO), the active layer 104 includes doped regions 1041 at two ends and an undoped region 1042 between the two doped regions 1041, and the doped regions 1041 may be formed by ion implantation or the like; the gate layer 1071 is disposed on the gate insulating layer 106 and corresponds to the undoped region 1042 of the active layer 104; the source electrode 1081 and the drain electrode 1082 are disposed on the interlayer dielectric layer 105, the source electrode 1081 and the drain electrode 1082 are connected to the doped region 1041 of the active layer 104 through a first via 112 and a second via 113, respectively, the drain electrode 1082 is connected to the light shielding layer 102 through a third via 114, specifically, the first via 112 and the second via 113 pass through the interlayer dielectric layer 105, and the third via 114 passes through the interlayer dielectric layer 105 and the buffer layer 103.
The first metal layer 107 and the second metal layer 108 may be metals or alloys having excellent conductive properties such as copper, titanium, molybdenum, etc., the first metal layer 107 includes the gate electrode 1071, the second metal layer 108 includes the source electrode 1081 and the drain electrode 1082, further, the first metal layer 107 further includes a scan line, and the second metal layer 108 further includes a data line.
In the embodiment of the present invention, the front projection of the additional metal layer 109 on the substrate 101 covers the front projection of the first metal layer 107 on the substrate 101, so as to adjust the thicknesses of the flat layer 111 and the anti-reflection layer 110, thereby achieving the effect of uniform low reflectivity of the whole surface of the display back plate.
It will be appreciated that the additional metal layer 109 and the first metal layer 107 are co-layer and that the additional metal layer 109 and the first metal layer 107 are of equal height such that the thickness of the planar layer 111 above the first metal layer 107 is equal to the thickness of the planar layer 111 above the second metal layer 108.
Further, in the embodiment of the present invention, the additional metal layer 109 and the first metal layer 107 may be connected through the fourth via 115 disposed on the flat layer 111, and of course, in other embodiments, the additional metal layer 109 and the first metal layer 107 may not be connected, which should not be limited thereto.
Specifically, the anti-reflection layer 110 is an inorganic thin film with a weak absorption coefficient, for example, the material of the anti-reflection layer 110 is molybdenum oxide (MoOx), etc., in general, for a three-layer structure such as an air/anti-reflection layer/metal routing, when the thickness of the anti-reflection layer 110 is equal to 1/4 wavelength, a lower reflectivity can be obtained, and accordingly, in the embodiment of the present invention, a uniform low reflectivity can be obtained relatively easily by designing the thicknesses of the anti-reflection layer 110 and the flat layer 111, and specific values can be obtained by theoretical calculation according to the dielectric constant parameters of the anti-reflection layer 110 and the flat layer 111, for example, referring to experimental data provided in fig. 2, under the condition that the thickness of the flat layer 111 is 250nm, the anti-reflection layer 110 is made of molybdenum oxide (MoOx) material, and when the thickness of the anti-reflection layer 110 is 60nm, the reflectivity is the lowest.
Specifically, the display backboard may be a Micro-LED display backboard or an OLED display backboard, and when the display backboard is a Micro-LED display backboard, the display backboard further includes an LED chip, and after a thin film transistor array is formed on the substrate, the LED chip is transferred to above the thin film transistor array by a massive transfer manner; when the display back plate is an OLED display back plate, the display back plate further includes a film structure including an organic light emitting layer, a pixel defining layer, and a packaging layer disposed on the thin film transistor array, which is not described herein.
Referring to fig. 3, the method for manufacturing a display back plate according to the embodiment of the invention includes the following steps:
s10: a substrate 101 is provided, and a first metal layer 107 is formed on the substrate 101.
Specifically, referring to fig. 3A, the substrate 101 may be a flexible substrate, the material of the substrate 101 is Polyimide (PI), the first metal layer 107 is formed on the substrate 101 by patterning through a yellow light process, the first metal layer 107 includes a plurality of metal wires, and the material of the first metal layer 107 may be a metal or an alloy with excellent conductive properties, such as copper, titanium, and molybdenum.
S20: an interlayer dielectric layer 105 is formed on the first metal layer 107.
Specifically, referring to fig. 3B, the dielectric layer may be formed on the first metal layer 107 by deposition, sputtering or coating, and the material of the interlayer dielectric layer 105 may be one or more of silicon oxide, silicon nitride and silicon oxynitride.
S30: a second metal layer 108 and an additional metal layer 109 are formed on the interlayer dielectric layer 105, and the additional metal layer 109 is disposed corresponding to the first metal layer 107.
Specifically, referring to fig. 3C, the second metal layer 108 and the additional metal layer 109 are formed on the interlayer dielectric layer 105 through a yellow light process, the first metal layer 107 includes a plurality of metal wires, and the material of the second metal layer 108 may contain metals or alloys with excellent conductivity such as copper, titanium and molybdenum; the additional metal layer 109 is disposed corresponding to the first metal layer 107, the second metal layer 108 and the additional metal layer 109 are manufactured by the same process, so that the process can be saved, and the second metal layer 108 and the additional metal layer 109 can be made of the same material.
S40: an anti-reflection layer 110 is formed on the side of the second metal layer 108 and the additional metal layer 109 remote from the substrate 101.
Specifically, referring to fig. 3D, an anti-reflection material may be sputtered on a side of the second metal layer 108 and the additional metal layer 109 away from the substrate 101, and then the anti-reflection layer 110 is formed by an etching process, where the material of the anti-reflection layer 110 may be molybdenum oxide (MoOx) or the like.
S50: a planarization layer 111 is formed on the anti-reflection layer 110, wherein the planarization layer 111 covers the interlayer dielectric layer 105, the second metal layer 108, the additional metal layer 109, and the anti-reflection layer 110, and a thickness of the planarization layer 111 above the second metal layer 108 is equal to a thickness of the planarization layer 111 above the additional metal layer 109.
Specifically, referring to fig. 3E, the planarization layer 111 may be formed on the anti-reflection layer 110 by deposition, sputtering or coating, and the material of the planarization layer 111 may be one or more of silicon oxide, silicon nitride and silicon oxynitride.
In the embodiment of the present invention, the additional metal layer 109 disposed corresponding to the first metal layer 107 is formed on the interlayer dielectric layer 105, so that the thickness of the flat layer 111 above the second metal layer 108 is equal to the thickness of the flat layer 111 above the additional metal layer 109, thereby avoiding the occurrence of the phenomenon of different anti-reflection effects caused by inconsistent thicknesses of the flat layers 111 above the metal wires of different film layers.
In the embodiment of the present invention, it is possible to relatively easily obtain uniform low reflectivity by designing the thicknesses of the anti-reflection layer 110 and the planarization layer 111.
Further, in the step of preparing the display back plate, further comprising:
patterning a light shielding layer 102 on the substrate 101;
forming a buffer layer 103 on the light shielding layer 102 and the substrate 101;
patterning an active layer 104 on the buffer layer 103;
patterning a gate insulating layer 106 on the active layer 104;
patterning a gate layer 1071 on the gate insulating layer 106;
forming the interlayer dielectric layer 105 on the gate layer 1071, the active layer 104, and the buffer layer 103;
patterning a source electrode 1081 and a drain electrode 1082 connected to the active layer 104 on the interlayer dielectric layer 105;
patterning the additional metal layer 109 on the interlayer dielectric layer 105;
forming the anti-reflection layer 110 on the source electrode 1081 and the drain electrode 1082 and the additional metal layer 109; and
the planarization layer 111 is formed on the source electrode 1081, the drain electrode 1082, and the additional metal layer 109 and the anti-reflection layer 110.
The light shielding layer 102, the active layer 104, the gate insulating layer 106, the gate electrode 1071, the source electrode 1081, the drain electrode 1082, and the additional metal layer 109 may be formed through a yellow light process, and the buffer layer 103, the interlayer dielectric layer 105, and the planarization layer 111 may be formed through deposition, sputtering, or coating methods, respectively.
The source electrode 1081 and the drain electrode 1082 are connected to the doped region 1041 of the active layer 104 through a first via 112 and a second via 113, respectively, and the drain electrode 1082 is connected to the light shielding layer 102 through a third via 114, specifically, the first via 112 and the second via 113 pass through the interlayer dielectric layer 105, and the third via 114 passes through the interlayer dielectric layer 105 and the buffer layer 103.
Specifically, the first metal layer 107 includes the gate electrode 1071, the second metal layer 108 includes the source electrode 1081 and the drain electrode 1082, further, the first metal layer 107 further includes a scan line, and the second metal layer 108 further includes a data line.
The embodiment of the invention also comprises a display panel, wherein the display panel comprises the display backboard in the embodiment, and the display panel can be a Micro-LED display panel or an OLED display panel.
The beneficial effects are as follows: according to the display backboard, the preparation method thereof and the display panel provided by the embodiment of the invention, the additional metal layer which is arranged on the same layer as the second metal layer is prepared, and the additional metal layer is arranged opposite to the first metal layer, so that the thickness of the flat layer above the first metal layer is consistent with the thickness of the flat layer above the second metal layer, the influence of film interference phenomenon generated by the flat layers above metal wires of different film layers on the anti-reflection effect is avoided, and the anti-reflection effect of the display panel can be optimized.
In summary, although the present invention has been described in terms of the preferred embodiments, the preferred embodiments are not limited to the above embodiments, and various modifications and changes can be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention is defined by the appended claims.
Claims (8)
1. A display back sheet, comprising:
a substrate;
the first metal layer is arranged on the substrate;
an interlayer dielectric layer covering the first metal layer;
the second metal layer and the additional metal layer are arranged on one side of the interlayer dielectric layer, which is far away from the substrate;
the anti-reflection layer is arranged on one side of the second metal layer and the additional metal layer, which is far away from the substrate; and
a planarization layer covering the second metal layer;
wherein the additional metal layer is disposed corresponding to the first metal layer such that a thickness of the flat layer above the first metal layer is equal to a thickness of the flat layer above the second metal layer; the orthographic projection of the additional metal layer on the substrate covers the orthographic projection of the first metal layer on the substrate, and the additional metal layer is connected with the first metal layer through a fourth via hole arranged on the flat layer.
2. The display back plate of claim 1, wherein the display back plate further comprises:
a light shielding layer disposed on the substrate;
a buffer layer covering the light shielding layer and the substrate;
an active layer disposed on the buffer layer;
a gate insulating layer overlying the active layer and the buffer layer;
the grid electrode layer is arranged on the grid electrode insulating layer; and
the source electrode and the drain electrode are arranged on the interlayer dielectric layer, are connected to the active layer through a first via hole and a second via hole respectively, and are connected to the shading layer through a third via hole;
wherein the first metal layer includes the gate layer and the second metal layer includes the source and the drain.
3. The display back plate of claim 1, wherein the material of the anti-reflection layer is molybdenum oxide.
4. The display back panel of claim 1, wherein the display back panel is a Micro-LED display back panel or an OLED display back panel.
5. A display panel comprising the display back sheet according to any one of claims 1 to 4.
6. The preparation method of the display backboard is characterized by comprising the following steps:
s10: providing a substrate, and forming a first metal layer on the substrate;
s20: forming an interlayer dielectric layer on the first metal layer;
s30: forming a second metal layer and an additional metal layer on the interlayer dielectric layer, wherein the additional metal layer is arranged corresponding to the first metal layer;
s40: forming an anti-reflection layer on one side of the second metal layer and the additional metal layer away from the substrate; and
s50: forming a flat layer on the anti-reflection layer, wherein the flat layer covers the interlayer dielectric layer, the second metal layer, the additional metal layer and the anti-reflection layer, and the thickness of the flat layer above the second metal layer is equal to the thickness of the flat layer above the additional metal layer; the orthographic projection of the additional metal layer on the substrate covers the orthographic projection of the first metal layer on the substrate, and the additional metal layer is connected with the first metal layer through a fourth via hole arranged on the flat layer.
7. The method of manufacturing a display back sheet according to claim 6, wherein in the step of manufacturing the display back sheet, further comprising:
patterning a light shielding layer on the substrate;
forming a buffer layer on the light shielding layer and the substrate;
patterning an active layer on the buffer layer;
patterning a gate insulating layer on the active layer;
patterning a gate electrode layer on the gate insulating layer;
forming the interlayer dielectric layer on the gate layer, the active layer and the buffer layer;
patterning on the interlayer dielectric layer to form a source electrode and a drain electrode connected with the active layer;
patterning the interlayer dielectric layer to form the additional metal layer;
forming the anti-reflection layer on the source electrode and the drain electrode and the additional metal layer; and
the planarization layer is formed on the source electrode, the drain electrode, and the additional metal layer and the anti-reflection layer.
8. The method of claim 6, wherein the second metal layer and the additional metal layer are formed by the same process.
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| CN202011548943.XA CN112687722B (en) | 2020-12-24 | 2020-12-24 | Display backboard, preparation method thereof and display panel |
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| CN202011548943.XA CN112687722B (en) | 2020-12-24 | 2020-12-24 | Display backboard, preparation method thereof and display panel |
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| CN112687722B true CN112687722B (en) | 2024-03-05 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130106754A (en) * | 2012-03-20 | 2013-09-30 | 엘지디스플레이 주식회사 | Organic light emitting diode display device and method for manufacturing the same |
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| KR20160086016A (en) * | 2015-01-08 | 2016-07-19 | 삼성디스플레이 주식회사 | Thin film transistor array panel and manufacturing method therfor |
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| KR20130106754A (en) * | 2012-03-20 | 2013-09-30 | 엘지디스플레이 주식회사 | Organic light emitting diode display device and method for manufacturing the same |
| CN109214260A (en) * | 2017-06-30 | 2019-01-15 | 三星显示有限公司 | Input sensing unit, display device and the method for manufacturing input sensing unit |
| CN107293256A (en) * | 2017-07-17 | 2017-10-24 | 武汉天马微电子有限公司 | Pixel circuit, electroluminescent display panel and display device |
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