CN112687609B - Method for growing AlN epitaxial layer by using graphite plate and substrate and graphite plate - Google Patents
Method for growing AlN epitaxial layer by using graphite plate and substrate and graphite plate Download PDFInfo
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- CN112687609B CN112687609B CN202011558595.4A CN202011558595A CN112687609B CN 112687609 B CN112687609 B CN 112687609B CN 202011558595 A CN202011558595 A CN 202011558595A CN 112687609 B CN112687609 B CN 112687609B
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- 239000000758 substrate Substances 0.000 title claims abstract description 102
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 94
- 239000010439 graphite Substances 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 32
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 15
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 239000004575 stone Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000889 atomisation Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a method for growing an AlN epitaxial layer by using a graphite disk and a substrate, which comprises the graphite disk and the substrate for placing the substrate and is characterized in that: 1) A circle of bulges are arranged on the graphite disc groove for placing the substrate, which is close to the outer boundary, and the height of the bulges is 0.1-1mm, and a concentric ring structure is formed between the bulges and the bottom of the graphite disc groove; 2) Etching the back surface of the edge of the substrate for one circle to form a groove with the depth of 0.1-0.5mm, wherein the formed annular groove just fits with the protrusion of the surface of the graphite disc, so that the protrusion of the graphite disc can be embedded into the groove of the back surface of the etched substrate; 3) Growing an AlN epitaxial layer by using the graphite plate and a substrate; according to the invention, on one hand, the problem that the AlN layer is easy to crack due to the fact that the AlN layer with higher crystal quality is obtained is solved, on the other hand, the influence of centrifugal force on the substrate is reduced, a sheet source with better uniformity is obtained, the above two points are combined, and the yield is improved as a whole.
Description
Technical Field
The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for growing an AlN epitaxial layer by utilizing a graphite plate and a substrate.
Background
A light emitting Diode (LED for short, english LIGHT EMITTING) is a solid semiconductor Diode light emitting device, and is widely used in the lighting fields of indicator lamps, display screens, and the like. The method for preparing the LED wafer at the present stage is mainly realized by Metal organic chemical vapor deposition (English is Metal-organic Chemical Vapor Deposition, MOCVD for short), and the flow can be briefly described as follows: placing an epitaxial wafer substrate (such as a sapphire substrate/Si substrate) on a groove of a graphite disc (WAFER CARRIER), introducing the epitaxial wafer substrate and the graphite disc into an MOCVD reaction chamber, heating the reaction chamber to a set temperature, and introducing an organic metal compound and a five-group gas in a matching way to break chemical bonds on the wafer substrate and re-polymerize the organic metal compound and the five-group gas to form the LED epitaxial layer.
In the MOCVD epitaxy process, the phenomenon of overlarge warpage of an epitaxial wafer often occurs. The warping surface deflects reflected light, so that the temperature control is inaccurate, the epitaxial wafer is heated unevenly, the distribution consistency of temperature-sensitive parameters such as wavelength, doping level and the like in epitaxial growth cannot be controlled, and finally the product performance is influenced. When the substrate rotates at a high speed (200-1200 RPM), the number of crystals at the center of the substrate may be smaller relative to the number of crystals at the edges during the epitaxy process, and the stress distribution of the surface of the whole epitaxial wafer may be changed during the growth process, so that the center region of the substrate is tilted, the temperature of the region is lower, on one hand, the phenomenon of incomplete growth and mergence of AlN partial regions is caused, the rejection is caused, and on the other hand, the wavelength of the subsequent LED epitaxial wafer is also caused to deviate, and the STD deviation is caused.
AlN belongs to a third-generation wide-bandgap semiconductor material, and the crystal of AlN has a stable hexagonal wurtzite structure, has the largest direct band gap in a III-V semiconductor material, has high heat conductivity, high resistivity, strong breakdown field and small dielectric coefficient, and is an excellent electronic material for high-temperature high-frequency and high-power devices. AlN, which is oriented along the c-axis, has excellent piezoelectric properties and high-speed propagation properties of acoustic surface waves, and is an excellent piezoelectric material for surface acoustic wave devices. Meanwhile, alN crystals and GaN crystals have very similar lattice constants and thermal expansion coefficients, and are preferred substrate materials for epitaxially growing AlGaN photoelectric devices.
While AlN has many advantages, alN materials are very difficult to prepare. High temperature and high pressure equipment and an accurate source flow control system are required for AlN production. Generally, the thicker the AlN film is deposited, the better the crystal quality of the AlN film is. When the AlN film is prepared to a certain thickness, surface cracks are easy to form because of larger lattice mismatch between AlN and the substrate, the cracks are easy to generate from the edge of the substrate, and the cracks extend from the edge area to the central area along with the increase of the thickness, so that the yield is affected. In order to obtain an AlN film with higher crystal quality, the thickness of the film layer needs to be increased, but cracks are easily introduced, resulting in poor yield. In order to obtain higher surface yield, the thickness of the AlN thin film layer is reduced, and the crystal quality of the AlN thin film is poor. This contradiction in AlN film growth makes it currently difficult to obtain a high quality crack-free AlN film substrate, resulting in a very limited application of AlN films.
Based on the reasons, the application provides the method for growing the AlN epitaxial layer by using the graphite disk and the substrate and the graphite disk, which can improve the quality of the AlN thin film crystal, reduce the surface cracks of the AlN thin film, improve the yield and facilitate the improvement of the performance of devices prepared on the AlN thin film material.
Disclosure of Invention
Aiming at the existing problems, the invention provides a method for growing an AlN epitaxial layer by utilizing a graphite disk and a substrate and the graphite disk.
The invention provides a method for growing an AlN epitaxial layer by using a graphite plate and a substrate, which is characterized by comprising the following steps:
1) Forming a circle of bulges near the outer boundary of a graphite disc groove for placing a substrate, and forming a concentric ring structure with the bottom of the graphite disc groove;
2) Etching the back surface of the edge of the substrate to form an annular groove, wherein the formed annular groove just fits with the surface bulge of the graphite disc, so that the annular bulge can be embedded into the groove on the back surface of the substrate;
3) An AlN epitaxial layer is grown on the substrate.
Further, the protruding structures in the graphite disc for placing the substrate are 0.5-5mm away from the boundary of the groove of the graphite disc, the heights of all the areas are consistent, the height is 0.1-1mm, and the width is 0.1-5mm.
Further, the back of the edge of the substrate is etched into an annular groove with the depth of 0.1-0.5mm, the formed annular groove is just matched with the surface bulge of the graphite disc, the etching width is 0.1-5mm, and the etching position of the back of the substrate is 0.1-2mm away from the edge.
Further, placing the specially designed graphite disc and the substrate into a reaction chamber of a growth device, controlling the temperature of the reaction chamber to be 600-1200 ℃, introducing trimethylaluminum and ammonia gas into the reaction chamber, then growing a buffer layer, controlling the temperature of the reaction chamber to be 1100-1500 ℃ and the pressure to be 20-300mbar, introducing trimethylaluminum and ammonia gas into the reaction chamber, and then generating an AlN epitaxial layer on the buffer growth layer, wherein the thickness of the AlN epitaxial layer is a, and a is more than or equal to 1 and less than or equal to 5 mu m;
Compared with the prior art, the invention has the following advantages and beneficial effects:
1) During epitaxy, the stone disk rotates at a high speed, and in the prior art, the substrate is generally laid on the stone disk, so that the stone disk rotates along with the stone disk, the rotation amplitude is large, sometimes the substrate deviates from the initial position greatly, and the epitaxial positions of the substrates at different positions on the disk are different greatly. In this case, as the epitaxial wafer rotates, the initial positions of crystal growth are inconsistent, the number of crystals at the central position of the substrate may be smaller relative to the edge positions under the action of centrifugal force, and the stress distribution of the surface of the whole epitaxial wafer may be changed during the growth process, so that the central region of the substrate is tilted. According to the invention, the graphite disc and the substrate adopt a fit mode, so that the substrate cannot rotate greatly, the positions of each substrate in the large disc are consistent, on one hand, the uniformity between sheets can be improved, on the other hand, the warpage can be reduced, the uniformity in sheets is improved, the problem of large warpage of the central area of the substrate caused by large centrifugal force is solved, the phenomenon of incomplete growth combination of AlN partial areas caused by lower temperature of the central area of an epitaxial wafer is avoided, the rejection rate is greatly reduced, meanwhile, the wavelength uniformity of a subsequently grown LED is improved, and the STD deviation is reduced.
2) The temperature is higher in the areas where the graphite disk and the substrate are in direct contact than in other areas where they are not in contact. Thus, when AlN is grown, the longitudinal growth rate is higher than the lateral growth rate in the region where the graphite disk and the substrate are in direct contact, and thus the contacted region may produce a dense hexagonal columnar structure. The stress buffer area formed by the defects is used for blocking the crack of the edge layer of the substrate from extending to the center, so that the yield is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it will be obvious that the drawings in the following description are some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of a substrate recess of a graphite disk in accordance with one embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a substrate groove of a graphite disk according to yet another embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a substrate recess of a graphite disk in accordance with yet another embodiment of the present invention;
FIG. 4 is a top view of the backside of the substrate of the present invention;
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of the embodiments of the present application will be given with reference to the accompanying drawings. However, those of ordinary skill in the art will understand that in various embodiments of the present application, numerous technical details have been set forth in order to provide a better understanding of the present application. The claimed application may be practiced without these specific details and with various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not be construed as limiting the specific implementation of the present application, and the embodiments can be mutually combined and referred to without contradiction.
The present invention will be described in detail with reference to specific examples.
Example 1
A method for growing an AlN epitaxial layer by utilizing a graphite plate and a substrate comprises the following specific steps:
1) A graphite disk groove is provided, the cross section of which is shown in figure 1 and is inverted trapezoid. A circle of protruding structures are arranged on the graphite disc groove for placing the substrate, close to the outer boundary, and a concentric ring structure is formed at the bottom of the graphite disc groove. The protruding structure 1 in the graphite disc groove is a continuous circular ring structure, the distance from the upper boundary of the graphite disc groove is 1.5mm, and the heights of all areas of the circular ring protruding structure are consistent. The height of the annular bulge structure is higher than the thickness of the substrate, the wider the width is, the better the effect is, but the surface yield of the epitaxial wafer is seriously affected by the too wide width, and the height is preferably 0.5mm and the width is preferably 1mm.
2) A substrate is provided, the backside top view of which is shown in fig. 4. The back of the edge of the substrate is etched to form an annular groove 4 with the depth of 0.2mm and the width of 1.1mm, the annular groove 4 is 1mm away from the edge of the back of the substrate, and the formed annular groove 4 is just matched with the surface bulge of the graphite disc, so that the annular bulge can be embedded into the groove 4 of the back of the substrate. Meanwhile, the height of the protruding structure 1 of the graphite disc is 0.5mm, the depth of the annular groove 4 of the substrate is 0.2mm, after the protrusions are embedded into the groove 4 on the back of the substrate, the back of the substrate does not contact with the groove surface of the graphite disc, namely, only the groove surface of the substrate is in contact with the protruding structure surface of the graphite disc, and the part outside the groove of the substrate is not in contact with the groove of the graphite disc, so that when AlN grows, the temperature is higher than that of other non-contacted parts, the longitudinal growth speed is higher than the transverse growth speed, and therefore, the contacted area can generate a dense hexagonal column structure. Wherein the thickness of the substrate is usually within 0.5mm, the annular groove 4 cannot be etched too deeply, otherwise the substrate is easily broken; the width of the groove is not too large, otherwise, the area of the direct contact of the substrate and the stone mill is increased, the area generated by dense hexagons is increased, the area with rough surface is increased, and the surface yield is affected.
3) Placing the substrate in the step 2) in the graphite disc in the step 1), and introducing the substrate into a reaction chamber of MOCVD.
Specifically, the temperature of the reaction chamber was controlled to 650 ℃, 50ml of TMAL and 2500ml of NH 3 were introduced into the reaction chamber, the pressure of the reaction chamber was controlled to 100mbar, and a 30nm AlN buffer layer was grown. The temperature of the reaction chamber was controlled at 1400℃and the pressure at 50mbar, 150ml TMAL and 5000ml NH 3 were introduced into the reaction chamber and grown for 2 hours to give an AlN layer with a thickness of 2000 nm.
The AlN layer edge is a dense hexagonal area, few surface cracks are generated, the cracks are blocked outside the hexagonal area, no extension exists, and the whole surface of the AlN layer has no atomization area.
XRD test was conducted on the AlN layer obtained as described above, which had high crystal quality and a good surface, wherein the half width in the (002) direction was 150arcsec and the half width in the (102) direction was 380arcsec.
Example 2
A method for growing an AlN epitaxial layer by utilizing a graphite plate and a substrate comprises the following specific steps:
1) A graphite disk recess is provided, a schematic cross-sectional view of which is shown in fig. 2. A circle of protruding structures are arranged on the graphite disc groove for placing the substrate, close to the outer boundary, and a concentric ring structure is formed at the bottom of the graphite disc groove. The protruding structures 2 in the graphite disc grooves are discontinuous columnar structures, all columnar structures are combined together to form a circular ring shape, the distance between the columnar structures and the boundary of the graphite disc grooves is 1.5mm, the heights of all areas of the protruding structures are consistent, the protruding size is preferably 0.5mm high, 0.9mm wide, and the spacing between the front columnar protruding structure and the rear columnar protruding structure is 0.01mm.
2) A substrate is provided, the backside top view of which is shown in fig. 4. The back of the edge of the substrate is etched to form an annular groove 4 with the depth of 0.2mm and the width of 1mm, the annular groove 4 is 0.7mm away from the edge of the back of the substrate, and the formed annular groove 4 is just matched with the surface bulge of the graphite disc, so that the columnar bulge can be embedded into the groove 4 of the back of the substrate.
3) Placing the substrate in the step 2) in the graphite disc in the step 1), introducing the graphite disc into a reaction chamber of MOCVD, controlling the temperature of the reaction chamber to 650 ℃, introducing 50ml of TMAL and 2500ml of NH 3 into the reaction chamber, controlling the pressure of the reaction chamber to 100mbar, and growing an AlN buffer layer of 30 nm. The temperature of the reaction chamber was controlled at 1400℃and the pressure at 50mbar, and after 180ml TMAL and 5000ml NH 3 were introduced into the reaction chamber, the reaction chamber was grown for 2 hours to give an AlN layer having a thickness of 2500 nm.
The AlN layer edge is a dense hexagonal area, few surface cracks are generated, the cracks are blocked outside the hexagonal area, no extension exists, and the whole surface of the AlN layer has no atomization area.
XRD test was conducted on the AlN layer obtained as described above, which had high crystal quality and a good surface, wherein the half width in the (002) direction was 130arcsec and the half width in the (102) direction was 350arcsec.
Example 3
A method for growing an AlN epitaxial layer by utilizing a graphite plate and a substrate comprises the following specific steps:
1) A graphite disk recess is provided, a schematic cross-sectional view of which is shown in fig. 3. A circle of protruding structures are arranged on the graphite disc groove for placing the substrate, close to the outer boundary, and a concentric ring structure is formed at the bottom of the graphite disc groove. The protruding structure 3 in the graphite disc groove is a discontinuous stacked columnar structure, the distance from the boundary of the graphite disc groove is 1.5mm, the heights of all areas of the protruding structure are consistent, the height is 0.5mm, the upper width is 0.5mm, the lower width is 0.9mm, and the interval between the front stacked columnar protruding structure and the rear stacked columnar protruding structure is 0.015mm.
2) A substrate is provided, the backside top view of which is shown in fig. 4. The back of the edge of the substrate is etched to form an annular groove 4 with the depth of 0.25mm and the width of 1mm, the annular groove 4 is 0.5mm away from the edge of the back of the substrate, and the formed annular groove 4 is just matched with the surface bulge of the graphite disc, so that the columnar bulge can be embedded into the groove 4 of the back of the substrate.
3) Placing the substrate in the step 2) in the graphite disc in the step 1), introducing the graphite disc into a reaction chamber of MOCVD, controlling the temperature of the reaction chamber to 650 ℃, introducing 50ml of TMAL and 2500ml of NH 3 into the reaction chamber, controlling the pressure of the reaction chamber to 100mbar, and growing an AlN buffer layer of 30 nm. The temperature of the reaction chamber was controlled at 1400℃and the pressure at 50mbar, and after introducing 200ml TMAL and 5000ml NH 3 into the reaction chamber, the reaction chamber was grown for 2.5 hours to give an AlN layer having a thickness of 4500 nm.
The AlN layer edge is a dense hexagonal area, few surface cracks are generated, the cracks are blocked outside the hexagonal area, no extension exists, and the whole surface of the AlN layer has no atomization area.
XRD test was conducted on the AlN layer obtained as described above, which had high crystal quality and a good surface, wherein the half width in the (002) direction was 95arcsec and the half width in the (102) direction was 280arcsec.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (14)
1. A method for growing an AlN epitaxial layer using a graphite disc and a substrate, comprising the steps of:
1) Forming a circle of bulges with the height of 0.1-1mm on the graphite disc groove for placing the substrate, and forming a concentric ring structure with the bottom of the graphite disc groove;
2) Etching the back surface of the edge of the substrate to form an annular groove with the depth of 0.1-0.5mm, wherein the width of the annular groove is 1mm or 1.1mm, and the formed annular groove is matched with the annular bulge on the surface of the graphite disc so that the annular bulge on the surface of the graphite disc is embedded into the groove on the back surface of the substrate;
3) An AlN epitaxial layer is grown on the substrate.
2. A method of growing an AlN epitaxial layer using a graphite disc and a substrate according to claim 1, wherein the raised structures in the graphite disc on which the substrate is placed are 0.5-5mm from the boundary of the grooves of the graphite disc.
3. The method of growing an AlN epitaxial layer using a graphite disc and a substrate according to claim 1, wherein the raised structures in the graphite disc on which the substrate is placed are selected from one of a ring structure, a plurality of discontinuous columnar structures, a plurality of discontinuous mesa-like or cone-like structures.
4. A method of growing an AlN epitaxial layer using a graphite disc and a substrate according to claim 1 or 3, wherein the raised structures of the graphite disc are uniform in height in each region, 0.1-1mm.
5. A method of growing an AlN epitaxial layer using a graphite disc and a substrate according to any one of claims 1-3, wherein the graphite disc relief structure is 0.1-5mm wide.
6. A method of growing an AlN epitaxial layer using a graphite disc and a substrate according to any one of claims 1-3, wherein the raised structures of the graphite disc form concentric annular structures with the bottoms of the grooves of the graphite disc.
7. A method of growing an AlN epitaxial layer using a graphite disc and a substrate according to claim 1, wherein the back-side etching width of the substrate is 0.1-5mm.
8. A method of growing an AlN epitaxial layer using a graphite disc and a substrate according to claim 1, wherein the back-side etching position of the substrate is 0.1-2mm from the edge.
9. A method of growing an AlN epitaxial layer using a graphite disc and a substrate according to claim 1, wherein the AlN epitaxial layer in step 3) includes an AlN buffer layer and an AlN layer grown on the AlN buffer layer.
10. The method for growing an AlN epitaxial layer using a graphite disc and a substrate according to claim 1, wherein step 3) specifically comprises: placing the graphite disc and the substrate into a reaction chamber of a growth device, controlling the temperature of the reaction chamber to be 600-1200 ℃, introducing trimethylaluminum and ammonia gas into the reaction chamber, then growing an AlN buffer layer, controlling the temperature of the reaction chamber to be 1100-1500 ℃ and the pressure to be 20-400mbar, and generating an AlN layer on the AlN buffer layer after introducing trimethylaluminum and ammonia gas into the reaction chamber.
11. The method for growing an AlN epitaxial layer using a graphite plate and a substrate according to claim 10, wherein the AlN epitaxial layer has a thickness of a and a is 0.5.ltoreq.a.ltoreq.5. Mu.m.
12. A graphite disk for growing an AlN epitaxial layer, comprising: the graphite disc groove for placing the substrate is characterized in that the longitudinal section of the graphite disc groove is in an inverted trapezoid shape, a circle of protruding structures are arranged on the graphite disc groove close to the outer boundary, a concentric ring structure is formed with the bottom of the graphite disc groove, and the heights of all areas of the ring protruding structures are consistent.
13. A graphite disc for growing an AlN epitaxial layer according to claim 12, wherein the raised structures are 1.5mm from the upper boundary of the grooves of the graphite disc, and the annular raised structures are 0.5mm high and 1mm wide.
14. A graphite disc for growing an AlN epitaxial layer according to claim 12, wherein the raised structures in the substrate-placed graphite disc are selected from one of a ring structure, a plurality of discontinuous columnar structures, a plurality of discontinuous mesa-like or cone-like structures.
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| CN103824796A (en) * | 2014-01-07 | 2014-05-28 | 苏州新纳晶光电有限公司 | Graphite bearing disc for LED epitaxial process, and matching substrate thereof |
| CN105442039A (en) * | 2015-12-30 | 2016-03-30 | 晶能光电（常州）有限公司 | Graphite disc for accommodating silicon substrate for MOCVD (metal-organic chemical vapor deposition) |
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| JP2006222134A (en) * | 2005-02-08 | 2006-08-24 | Hitachi Cable Ltd | Tray for semiconductor wafer |
| CN203839357U (en) * | 2014-05-12 | 2014-09-17 | 保定天威英利新能源有限公司 | Fixing pallet for chip carrying boxes for silicon chips |
| CN109183001A (en) * | 2018-11-27 | 2019-01-11 | 中山德华芯片技术有限公司 | A kind of graphite plate applied to epitaxial growth of semiconductor material growth |
| CN210314481U (en) * | 2019-07-31 | 2020-04-14 | 安徽三安光电有限公司 | Graphite plate and matched substrate thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103824796A (en) * | 2014-01-07 | 2014-05-28 | 苏州新纳晶光电有限公司 | Graphite bearing disc for LED epitaxial process, and matching substrate thereof |
| CN105442039A (en) * | 2015-12-30 | 2016-03-30 | 晶能光电（常州）有限公司 | Graphite disc for accommodating silicon substrate for MOCVD (metal-organic chemical vapor deposition) |
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