CN112630616A - Diode electrical property testing method - Google Patents
Diode electrical property testing method Download PDFInfo
- Publication number
- CN112630616A CN112630616A CN202011504056.2A CN202011504056A CN112630616A CN 112630616 A CN112630616 A CN 112630616A CN 202011504056 A CN202011504056 A CN 202011504056A CN 112630616 A CN112630616 A CN 112630616A
- Authority
- CN
- China
- Prior art keywords
- diode
- testing method
- pulse
- current
- heating box
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 46
- 238000010438 heat treatment Methods 0.000 claims abstract description 33
- 238000010998 test method Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 7
- 230000009471 action Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a diode electrical property testing method which is characterized by comprising the following specific steps: s1, heating the diode, placing the diode to be tested on a test supporting plate, placing the test supporting plate and the diode into a heating box, and setting the temperature range of the heating box to be 40-140 ℃; s2, electrifying the diode, and applying electric pulse flow to two ends of the diode to be tested, wherein the pulse width of the pulse flow is 100 mus, and the range of the pulse flow is 0.5A-2.5A; and S3, recording data, namely respectively recording voltage drop data of the diode under different pulse currents at the same temperature and under different temperatures with the same pulse current intensity. The constant current testing method provided by the invention is used for testing the diode, and the testing value is accurate.
Description
Technical Field
The invention relates to the technical field of diodes, in particular to a diode electrical property testing method.
Background
In electronic circuits, diodes are often used, which are one of the earliest semiconductor devices in birth and are widely used, and a crystal diode is a pn junction formed by a p-type semiconductor and an n-type semiconductor, and a space charge layer is formed at both sides of the interface of the pn junction and a self-established electric field is established. When no external voltage exists, the diffusion current caused by the carrier concentration difference of two sides of the p-n junction is equal to the drift current caused by the self-established electric field, and the p-n junction is in an electric balance state. When the outside has forward voltage bias, the mutual inhibition of the outside electric field and the self-established electric field increases the diffusion current of the carriers, so that the forward current is caused. When the outside has reverse voltage bias, the outside electric field and the self-established electric field are further strengthened to form reverse saturation current I0 irrelevant to the reverse bias voltage value in a certain reverse voltage range. When the applied reverse voltage is high to a certain degree, the electric field intensity in the pn junction space charge layer reaches a critical value to generate a multiplication process of carriers, a large number of electron-hole pairs are generated, and a reverse breakdown current with a large value is generated, which is called as a breakdown phenomenon of the diode. The heat dissipation performance of the diode, especially for a high-voltage high-power diode, is greatly affected, and if the heat cannot be effectively transmitted in time under the condition of high voltage and large current, heat accumulation inside the device and junction temperature rise can be caused, so that the reliability of the device is reduced, even the function of the device is failed, and the device cannot work safely. Therefore, the diode needs to be detected. The traditional detection method has high cost, long time consumption and great damage to the packaged diode
Disclosure of Invention
The present invention is directed to a method for testing electrical characteristics of a diode, so as to solve the problems mentioned in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a diode electrical property test method is characterized by comprising the following specific steps:
s1 heating diode
Placing the diode to be tested on a test supporting plate, placing the test supporting plate and the diode into a heating box, and setting the temperature range of the heating box to be 40-140 ℃;
s2, energizing the diode
Applying pulse current to two ends of the diode to be tested, wherein the range of the pulse current is 0.5A-2.5A;
s3 recording data
Diode drop data were recorded separately.
Preferably, the step S1 sets a temperature point 20 ℃ higher per liter.
Preferably, in the step 2, the current is measured at a current measuring point with a height of 0.5A per liter.
Preferably, the heating time in step S1 is 15min to 30 min.
Preferably, the pulse width of the pulse current in step S2 is 100 μ S.
Preferably, in step S3, voltage drop data of the diodes at different temperatures and different pulse currents at the same temperature and different temperatures at the same pulse current intensity are recorded respectively.
Preferably, in step S2, the diode under test is located in the heating box.
Compared with the prior art, the invention has the beneficial effects that:
1. the testing method of the invention can not damage the device to be tested, and does not need to unseal the device to be tested;
2. the diode is tested by the constant current testing method, and the testing value is accurate.
Drawings
FIG. 1 is a cross-sectional view of an overall structure of a method for testing electrical properties of a diode according to the present invention;
FIG. 2 is a graph of the voltage drop of the diode of the present invention at different pulse current levels at 40 deg.C;
FIG. 3 is a graph of the voltage drop of the diode of the present invention at different temperatures with 1mA pulse current intensity.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1-3, the present invention provides a technical solution: a method for testing electrical property of a diode comprises the following steps:
s1 heating diode
Placing the diode to be tested on a test supporting plate, placing the test supporting plate and the diode into a heating box, and setting the temperature of the heating box to be 40 ℃;
s2, energizing the diode
Applying electric pulse current to two ends of the diode to be tested, wherein the range of the pulse current is 0.5A;
s3 recording data
And recording voltage drop data of the diode.
The step S1, setting a temperature point 20 ℃ higher per liter.
In the step 2, the current is taken as a current test point with the height of 0.5A per liter.
The heating time in step S1 is 15 min.
The pulse width of the pulse current in step S2 is 100 μ S.
In step S3, voltage drop data of the diodes at different temperatures and different pulse currents at the same temperature and different temperatures at the same pulse current intensity are recorded respectively.
In step S2, the diode under test is located in the heating box.
Example 2
Referring to fig. 1-3, the present invention provides a technical solution: a method for testing electrical property of a diode comprises the following steps:
s1 heating diode
Placing the diode to be tested on a test supporting plate, placing the test supporting plate and the diode into a heating box, and setting the temperature of the heating box to be 40 ℃;
s2, energizing the diode
Applying pulse current to two ends of the diode to be tested, wherein the range of the pulse current is 0.7A;
s3 recording data
And recording voltage drop data of the diode.
The step S1, setting a temperature point 20 ℃ higher per liter.
In the step 2, the current is taken as a current test point with the height of 0.5A per liter.
The heating time in step S1 is 15 min.
The pulse width of the pulse current in step S2 is 100 μ S.
In step S3, voltage drop data of the diodes at different temperatures and different pulse currents at the same temperature and different temperatures at the same pulse current intensity are recorded respectively.
In the step S2, the diode under test is located in the heating box
Example 3
Referring to fig. 1-3, the present invention provides a technical solution: a method for testing electrical property of a diode comprises the following steps:
s1 heating diode
Placing the diode to be tested on a test supporting plate, placing the test supporting plate and the diode into a heating box, and setting the temperature range of the heating box to be 60 ℃;
s2, energizing the diode
Applying pulse current to two ends of the diode to be tested, wherein the range of the pulse current is 0.7A;
s3 recording data
And recording voltage drop data of the diode.
The step S1, setting a temperature point 20 ℃ higher per liter.
In the step 2, the current is taken as a current test point with the height of 0.5A per liter.
The heating time in step S1 is 15 min.
The pulse width of the pulse current in step S2 is 100 μ S.
In step S3, voltage drop data of the diodes at different temperatures and different pulse currents at the same temperature and different temperatures at the same pulse current intensity are recorded respectively.
Example 4
Referring to fig. 1-3, the present invention provides a technical solution: a method for testing electrical property of a diode comprises the following steps:
s1 heating diode
Placing the diode to be tested on a test supporting plate, placing the test supporting plate and the diode into a heating box, and setting the temperature range of the heating box to be 140 ℃;
s2, energizing the diode
Applying electric pulse current to two ends of the diode to be tested, wherein the pulse current is 2.5A;
s3 recording data
And recording voltage drop data of the diode.
The step S1, setting a temperature point 20 ℃ higher per liter.
In the step 2, the current is taken as a current test point with the height of 0.5A per liter.
The heating time in step S1 is 30 min.
The pulse width of the pulse current in step S2 is 100 μ S.
In step S3, voltage drop data of the diodes at different temperatures and different pulse currents at the same temperature and different temperatures at the same pulse current intensity are recorded respectively.
The working principle is as follows: when the test is carried out, firstly, currents with the same intensity are added to the diode, the internal temperature of the diode rises due to the fact that the power consumption of the diode can generate heat, after the diode is electrified for a certain time, when the heat generation and the heat dissipation of the diode are balanced, the internal junction temperature of the diode is stable, and the voltage drop of the diode at the moment is measured. Then stopping electrifying the diode, increasing the temperature of the diode through the heating box, adding a very short pulse current to the diode when the temperature of the diode is increased to a certain value, wherein the current is the same as the direct current applied previously, the pulse time is very short, the heat generation of the diode in the period of time can be ignored, the temperature of the diode is considered to be the temperature of the heating box, the voltage drop on the diode at the moment is measured, the error of the measured voltage is very small due to the fact that the current applied by people is large, the characteristic that the current of the diode rises along with the voltage index is utilized, and the change of the voltage is completely caused by the change of junction temperature.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A diode electrical property test method is characterized by comprising the following specific steps:
s1 heating diode
Placing the diode to be tested on a test supporting plate, placing the test supporting plate and the diode into a heating box, and setting the temperature range of the heating box to be 40-140 ℃;
s2, energizing the diode
Applying pulse current to two ends of the diode to be tested, wherein the range of the pulse current is 0.5A-2.5A;
s3 recording data
Diode drop data was recorded.
2. The electrical testing method of the diode of claim 1, wherein: the step S1, setting a temperature point 20 ℃ higher per liter.
3. The electrical testing method of the diode of claim 1, wherein: in the step 2, the current is taken as a current test point with the height of 0.5A per liter.
4. The electrical testing method of the diode of claim 1, wherein: the heating time in the step S1 is 15min-30 min.
5. The electrical testing method of the diode of claim 1, wherein: the pulse width of the pulse current in step S2 is 100 μ S.
6. The electrical testing method of the diode of claim 1, wherein: in step S3, voltage drop data of the diodes at different temperatures and different pulse currents at the same temperature and different temperatures at the same pulse current intensity are recorded respectively.
7. The electrical testing method of the diode of claim 1, wherein: in step S2, the diode under test is located in the heating box.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011504056.2A CN112630616A (en) | 2020-12-18 | 2020-12-18 | Diode electrical property testing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011504056.2A CN112630616A (en) | 2020-12-18 | 2020-12-18 | Diode electrical property testing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112630616A true CN112630616A (en) | 2021-04-09 |
Family
ID=75316962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011504056.2A Pending CN112630616A (en) | 2020-12-18 | 2020-12-18 | Diode electrical property testing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112630616A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102759544A (en) * | 2012-07-06 | 2012-10-31 | 东南大学 | Method for testing thermal resistance of high-power silicon carbide diode |
| CN102944824A (en) * | 2012-11-09 | 2013-02-27 | 绍兴旭昌科技企业有限公司 | Test method for testing rectifier diode transient high temperature reverse leakage current |
| CN103424678A (en) * | 2012-06-06 | 2013-12-04 | 上海理工大学 | Test system and test method for measuring AC-LED junction temperature |
| CN103954899A (en) * | 2014-04-09 | 2014-07-30 | 北京工业大学 | Method for measuring diode transient temperature rise in real time |
| CN103995223A (en) * | 2014-04-11 | 2014-08-20 | 清华大学深圳研究生院 | Method and apparatus for measuring thermal characteristic of LED |
| CN108802592A (en) * | 2018-08-24 | 2018-11-13 | 无锡市产品质量监督检验院 | A kind of bypass diode test device and test method |
| CN208752169U (en) * | 2018-08-24 | 2019-04-16 | 无锡市产品质量监督检验院 | A kind of bypass diode test device |
| CN111693840A (en) * | 2020-06-18 | 2020-09-22 | 山东宝乘电子有限公司 | Method for testing thermal resistance of Schottky diode by utilizing reverse characteristic |
-
2020
- 2020-12-18 CN CN202011504056.2A patent/CN112630616A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103424678A (en) * | 2012-06-06 | 2013-12-04 | 上海理工大学 | Test system and test method for measuring AC-LED junction temperature |
| CN102759544A (en) * | 2012-07-06 | 2012-10-31 | 东南大学 | Method for testing thermal resistance of high-power silicon carbide diode |
| CN102944824A (en) * | 2012-11-09 | 2013-02-27 | 绍兴旭昌科技企业有限公司 | Test method for testing rectifier diode transient high temperature reverse leakage current |
| CN103954899A (en) * | 2014-04-09 | 2014-07-30 | 北京工业大学 | Method for measuring diode transient temperature rise in real time |
| CN103995223A (en) * | 2014-04-11 | 2014-08-20 | 清华大学深圳研究生院 | Method and apparatus for measuring thermal characteristic of LED |
| CN108802592A (en) * | 2018-08-24 | 2018-11-13 | 无锡市产品质量监督检验院 | A kind of bypass diode test device and test method |
| CN208752169U (en) * | 2018-08-24 | 2019-04-16 | 无锡市产品质量监督检验院 | A kind of bypass diode test device |
| CN111693840A (en) * | 2020-06-18 | 2020-09-22 | 山东宝乘电子有限公司 | Method for testing thermal resistance of Schottky diode by utilizing reverse characteristic |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kim et al. | Reexamination of photovoltaic hot spotting to show inadequacy of the bypass diode | |
| Kim et al. | Photovoltaic hot-spot detection for solar panel substrings using AC parameter characterization | |
| Sabbaghpur Arani et al. | The comprehensive study of electrical faults in PV arrays | |
| Herrmann et al. | Hot spot investigations on PV modules-new concepts for a test standard and consequences for module design with respect to bypass diodes | |
| Kim et al. | Photovoltaic hot spot analysis for cells with various reverse-bias characteristics through electrical and thermal simulation | |
| Tina et al. | Monitoring and diagnostics of photovoltaic power plants | |
| Nasrin et al. | Quantifying device degradation in live power converters using SSTDR assisted impedance matrix | |
| Zhang et al. | Temperature and reverse voltage across a partially shaded Si PV cell under hot spot test condition | |
| Luo et al. | Online high-power PiN diode chip temperature extraction and prediction method with maximum recovery current di/dt | |
| Kaplar et al. | PV inverter performance and reliability: What is the role of the IGBT? | |
| Luo et al. | Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules | |
| Tang et al. | Design and implementation of a simulator for photovoltaic modules | |
| Pralgauskaitė et al. | Reliability investigation of light-emitting diodes via low frequency noise characteristics | |
| Singh et al. | An improved hot spot mitigation approach for photovoltaic modules under mismatch conditions | |
| CN110632489B (en) | Leakage current-based IGBT junction temperature monitoring circuit and method | |
| US20120038385A1 (en) | In-process measurement apparatus | |
| CN112630616A (en) | Diode electrical property testing method | |
| Chen et al. | Degradation assessment of 1.2-kV SiC MOSFETs and comparative study with 1.2-kV Si IGBTs under power cycling | |
| Hower et al. | Stable hot spots and second breakdown in power transistors | |
| Xu et al. | Research on hot spot risk of high wattage solar modules | |
| Al Abdullah et al. | Study of the effects related to the electric reverse stress currents on the mono-Si solar cell electrical parameters | |
| Macku et al. | Analysis of fluctuation processes in forward‐biased solar cells using noise spectroscopy | |
| Hu et al. | Condition monitoring for solder layer degradation in multi‐device system based on neural network | |
| Yang et al. | Investigation of the relationship between reverse current of crystalline silicon solar cells and conduction of bypass diode | |
| Al‐Soeidat et al. | Experimental study of static and dynamic behaviours of cracked PV panels |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210409 |