CN112635950B - Dielectric waveguide filter and method for manufacturing the same - Google Patents
Dielectric waveguide filter and method for manufacturing the same Download PDFInfo
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- CN112635950B CN112635950B CN202011611352.2A CN202011611352A CN112635950B CN 112635950 B CN112635950 B CN 112635950B CN 202011611352 A CN202011611352 A CN 202011611352A CN 112635950 B CN112635950 B CN 112635950B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
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Abstract
The present disclosure relates to a dielectric waveguide filter and a method for manufacturing the same, the method for manufacturing the dielectric waveguide filter includes: forming a medium body, wherein the medium body comprises a first surface and a second surface which are oppositely arranged, and the first surface is provided with a blind hole; photoetching the bottom of the blind hole to form an auxiliary hole for adjusting the frequency; and forming a patterned metal layer on the surface of the dielectric body. According to the technical scheme provided by the embodiment of the disclosure, the auxiliary hole for adjusting the frequency is formed at the bottom of the blind hole by adopting a photoetching process, so that the frequency of the filter can be adjusted to a low frequency, and the problem that the frequency of a batch of products with higher frequency cannot be adjusted downwards in the production process is solved; and because the non-contact debugging method is adopted, compared with the traditional polishing debugging mode, the method is beneficial to reducing loss and debugging cost.
Description
Technical Field
The present disclosure relates to the field of communications technologies, and in particular, to a dielectric waveguide filter and a method for manufacturing the same.
Background
With the development of communication technology, the requirements on the size and performance of filters (including ceramic dielectric waveguide filters, ceramic filters for short) in communication devices are high, the ceramic filters have advantages in the application of the 5G field, and with the large-scale construction of 5G base stations, the 5G base stations will fully benefit from the revolution brought by the 5G technology. The ceramic filter is prepared by plating a metal layer on the surface of the dielectric ceramic, removing unnecessary metal material on the metal layer to form a required metal pattern, i.e. performing demetalization treatment to form a coupling capacitor pattern, thereby realizing the filtering function.
In order to meet the frequency requirement of the ceramic filter, the frequency of the ceramic filter needs to be debugged in the production process of the ceramic filter. The mode that the tradition adopted artifical to polish gets rid of unnecessary metal material, but this mode formation tiny size degree of difficulty is great, and the consumptive material is more, and the cost is higher. In order to improve the above problem, a photolithography process may be used for frequency tuning. However, in the photolithography process, the light source is vertically lithographed from top to bottom, which limits the debugging only from low frequency to high frequency, and cannot perform electrical performance debugging on high frequency products (i.e. filters) in batch production.
Disclosure of Invention
To solve the above technical problem or at least partially solve the above technical problem, the present disclosure provides a dielectric waveguide filter and a method of manufacturing the same.
The present disclosure provides a method for manufacturing a dielectric waveguide filter, comprising:
forming a medium body, wherein the medium body comprises a first surface and a second surface which are oppositely arranged, and the first surface is provided with a blind hole;
photoetching the bottom of the blind hole to form an auxiliary hole for adjusting the frequency;
and forming a patterned metal layer on the surface of the dielectric body.
In some embodiments, the forming a media body comprises:
pressing the ceramic dielectric material into a green body;
and sintering the green body into a ceramic dielectric body at a preset temperature.
In some embodiments, when the frequency of the dielectric waveguide filter needs to be decreased, the depth of the auxiliary hole is increased and/or the cross-sectional area of the auxiliary hole is increased.
In some embodiments, the performing lithography on the bottom of the blind via includes:
photoetching the bottom of the blind hole under the condition of preset beam radius and preset beam energy;
the cross-sectional area of the auxiliary hole is in direct proportion to the radius of the light beam, and the depth of the auxiliary hole is in direct proportion to the energy of the light beam.
In some embodiments, the pattern of the metal layer comprises at least one of a circle, an ellipse, a polygon, and a composite pattern.
In some embodiments, the material of the metal layer comprises silver.
In some embodiments, the metal layer is formed in a manner including: immersion silver, electroplating, spraying, silk-screen printing or film coating.
The disclosure also provides a dielectric waveguide filter, which comprises a dielectric body, wherein the dielectric body comprises a first surface and a second surface which are oppositely arranged, the first surface is provided with a blind hole, and the bottom of the blind hole is superposed with an auxiliary hole for adjusting the frequency; and the surface of the medium body is provided with a patterned metal layer.
In some embodiments, the dielectric body is made of a ceramic material, the metal layer is made of a silver material, the blind holes are formed by pressing and sintering, and the auxiliary holes are formed by laser lithography.
In some embodiments, the frequency of the dielectric waveguide filter is reduced by increasing the cross-sectional area of the auxiliary holes and/or increasing the depth of the auxiliary holes.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
according to the preparation method of the dielectric waveguide filter, the blind hole is formed in the first surface of the dielectric body, the auxiliary hole for adjusting the low frequency is formed at the bottom of the blind hole through photoetching, then the surface of the dielectric body is metalized, the frequency of the dielectric waveguide filter can be adjusted to be low through the auxiliary hole, namely, the frequency is moved to be low, and the problem that the frequency of the dielectric waveguide filter is high in the batch production process is solved; meanwhile, a photoetching process is adopted, and the non-contact debugging mode is adopted, so that the abrasion problem in the traditional polishing debugging mode is solved, the loss is favorably reduced, and the cost is reduced.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the embodiments or technical solutions in the prior art description will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 is a schematic flow chart illustrating a method for manufacturing a dielectric waveguide filter according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a dielectric waveguide filter provided in an embodiment of the present disclosure, in which an auxiliary hole is superimposed at the bottom of a blind hole;
fig. 3 is a schematic diagram illustrating a structural comparison between a media body and a conventional media body according to an embodiment of the disclosure;
fig. 4 is a schematic diagram illustrating a comparison between structures of a dielectric waveguide filter and a conventional dielectric waveguide filter according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram illustrating comparison between performances of a dielectric waveguide filter provided in an embodiment of the present disclosure and a conventional dielectric waveguide filter;
FIG. 6 is a graph of frequency as a function of depth of an auxiliary hole provided by embodiments of the present disclosure;
FIG. 7 is a graph of frequency as a function of radius of an auxiliary hole provided by embodiments of the present disclosure;
FIG. 8 is a graph of lithographic effects of an auxiliary via at two different lithographic radii provided by an embodiment of the present disclosure;
fig. 9 is a schematic diagram illustrating a comparison between performances of another dielectric waveguide filter provided in the embodiment of the present disclosure and a conventional dielectric waveguide filter.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced otherwise than as described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.
In the filter frequency debugging mode, if a manual polishing processing mode is adopted to remove part of the metal layer on the surface of the dielectric body, because the microwave dielectric ceramic material has the characteristics of high brittleness, high hardness and the like, the difficulty of etching the coupling capacitor microgrooves on the surface of the dielectric body by using the traditional manual polishing implementation mode is high, and the ceramic surface is easy to damage; simultaneously, traditional manual work is polished for the machining mode, and this mode exists consumptive material wearing and tearing, and the consumptive material is along with long-time easy production dimensional deviation that uses promptly, difficult industrialization management and control, and the consumptive material replaces and leads to the processing cost higher.
In this regard, the patterning of the metal layer may be accomplished by a photolithography process, such as laser etching. The laser etching process has the advantages of non-contact, no pollution, realization of micron-scale fine processing and strong automatic integration capability.
Therefore, the metal layer on the surface of the ceramic filter is patterned in a laser etching mode, and electrode manufacturing and frequency debugging can be realized; the traditional manual turning, grinding and debugging mode is replaced by laser etching, so that the etching precision is high, the production is controllable, and the debugging efficiency is improved; and because there is not bistrique loss, very big reduction the debugging cost.
In the frequency debugging (namely laser debugging) method applying laser etching, laser photoetching is adopted to remove part of a metal layer, such as silver, on the surface of a medium body, so that the frequency of a filter can be increased, namely the pass band moves to high frequency, and the requirement of the electrical performance index of the filter is met.
However, in the laser debugging in the related art, since the light source performs vertical photolithography from top to bottom, that is, the metal layer on the surface of the dielectric body is gradually thinned, the frequency debugging can only be performed from a low frequency to a high frequency, and a product with a higher frequency cannot be debugged again in the low frequency direction, so that the frequency debugging of a filter with a higher frequency cannot be performed.
In order to solve the above problem, an embodiment of the present disclosure provides a method for manufacturing a dielectric waveguide filter, where a method of performing photolithography on a bottom of a blind hole on a first surface of a dielectric body and then performing metallization is adopted, so that a frequency of the filter can move to a low frequency, and a problem of a high frequency in mass production is solved. Specifically, the method can also be referred to as a dielectric waveguide filter laser inverse debugging method, and specifically comprises the following steps: pressing and sintering the ceramic to obtain a filter substrate, namely a dielectric body; photoetching is carried out in a hole (namely a blind hole) of a filter base body, and an auxiliary hole is overlapped and formed at the bottom of the blind hole; and carrying out a surface metallization process on the filter substrate after photoetching to form the filter. Further, by increasing the diameter and/or depth of the lithography circle, the frequency can be controlled to move to a low frequency, and the control of the frequency shift variation is realized.
The following provides an exemplary description of a method for manufacturing a dielectric waveguide filter, a dielectric waveguide filter formed by the method, and benefits achieved by the method, with reference to fig. 1 to 9.
In some embodiments, fig. 1 illustrates a method of making a dielectric waveguide filter according to embodiments of the present disclosure. As shown in fig. 1, the preparation method includes the following steps.
And S110, forming a dielectric body.
The medium body comprises a first surface and a second surface which are arranged oppositely, and the first surface is provided with a blind hole.
Wherein a direction in which the first surface points toward the second surface may be referred to as a height direction of the dielectric waveguide filter, and the first surface and the second surface are spaced apart in the height direction of the dielectric waveguide filter.
The opening of the blind hole is arranged on the first surface, the depth direction of the opening is the same as the height direction of the dielectric waveguide filter, and the depth of the blind hole is smaller than the height of the dielectric body. The first surface is provided with at least one blind hole, and optionally, one blind hole is provided in the center of the first surface, or two or more blind holes are symmetrically provided on the first surface, which is not limited in the disclosure.
Optionally, the four corners of the dielectric body may be provided with rounded corners and/or chamfered corners to improve the coupling energy.
In some embodiments, where a ceramic dielectric body is employed, this step may comprise:
the method comprises the following steps: pressing the ceramic dielectric material into a green body.
Step two: and sintering the green body into the ceramic dielectric body at a preset temperature.
Specifically, the ceramic dielectric body may be formed from a ceramic dielectric material through a pressing and sintering process using a pressing mold.
The preset temperature may be set based on the ceramic dielectric material, or may be a temperature range, such as 1000 ℃, 1100 ℃ to 1200 ℃, or other temperature ranges, which is not limited in the disclosure.
And S120, photoetching the bottom of the blind hole to form an auxiliary hole for adjusting the frequency.
And photoetching the bottom of the blind hole on the dielectric body, for example, etching by using laser to form a frequency adjusting hole which is continuously sunken towards the second surface, wherein the frequency adjusting hole is called as an auxiliary hole and can be used for adjusting the frequency.
Illustratively, fig. 2 shows a structure of a dielectric body in which an auxiliary hole is superimposed on the bottom of a blind hole according to an embodiment of the present disclosure. Referring to fig. 2, the z direction represents the height direction of the dielectric waveguide filter, which is also the depth direction of the blind hole; providing blind holes 211 in the first surface 201 of the dielectric body 200, the blind holes 211 being formed in the press sintering step described above; the auxiliary holes 212 are formed in superposition at the bottom of the blind hole 211.
It should be noted that fig. 2 only shows a cross section of a single frequency hole (which may include a blind hole and an auxiliary hole, and may also be understood as an auxiliary hole) by way of example, and in other embodiments, the number and distribution manner of the frequency holes may be set based on requirements of the dielectric waveguide filter, and embodiments of the present disclosure are not limited.
Illustratively, fig. 3 shows a structural comparison of a media body of an embodiment of the present disclosure with an existing media body. Referring to fig. 3, in the dielectric waveguide filter 20 provided in the embodiment of the present disclosure, the first surface 201 of the dielectric body 200 is provided with a blind hole 211, and an auxiliary hole 212 is formed at the bottom of the blind hole 211 in an overlapping manner; in the conventional dielectric waveguide filter 001, the dielectric body 01 only includes the blind hole 011, and an auxiliary hole or other structures are not superposed at the bottom of the blind hole 011.
Fig. 3 shows only 6 frequency holes by way of example, and the frequency holes are distributed in an array of 2 rows and 3 columns, in other embodiments, the number of the frequency holes may also be other numbers, and other arrangements may be adopted, and the embodiments of the present disclosure are not limited.
And S130, forming a patterned metal layer on the surface of the dielectric body.
The patterned metal layer is a metal layer with a preset hollow pattern, and can be formed in a mask coating mode or a mode of taking out the metal layer in a preset area after plating.
Exemplarily, fig. 4 shows a structure comparison diagram of a dielectric waveguide filter of an embodiment of the present disclosure and a conventional dielectric waveguide filter, which is understood as a structure after surface metallization of a dielectric body on the basis of fig. 3. Wherein 001 represents the existing dielectric waveguide filter, which is an unlithographically debugged ceramic product; 20 represents a dielectric waveguide filter provided by the embodiment of the disclosure, and 205 represents a metal layer, which is a ceramic product after photoetching debugging. In contrast, in the embodiment of the present disclosure, after the auxiliary holes 212 are stacked in the blind holes 211 of the conventional dielectric body, the metal layer 205 is formed.
Exemplarily, fig. 5 shows a performance comparison diagram of a dielectric waveguide filter according to an embodiment of the present disclosure and an existing dielectric waveguide filter. Wherein the abscissa X represents frequency in hertz (Hz); the ordinate Y represents the Insertion Loss (Insertion Loss) in decibels (dB); l001 represents the electrical performance curve of the conventional dielectric waveguide filter, L301 represents the electrical performance curve of the dielectric waveguide filter of the embodiment of the present disclosure, and the curves in fig. 5 share the same abscissa. The comparison shows that the electrical property of the dielectric waveguide filter debugged by photoetching is superior to that of the dielectric waveguide filter debugged without photoetching.
In the above embodiment, the amount of change in frequency shift of the frequency shift to a low frequency can be controlled by setting the depth and the sectional area size of the auxiliary hole; correspondingly, the diameter of the lithography circle and the depth parameter in the adjustable lithography apparatus control the amount of the frequency shift variation, as exemplified below.
In some embodiments, when the frequency of the dielectric waveguide filter needs to be decreased, the depth of the auxiliary hole is increased and/or the cross-sectional area of the auxiliary hole is increased.
The depth of the auxiliary hole is the height of the auxiliary hole along the height direction of the dielectric waveguide filter, and the cross-sectional area of the auxiliary hole is the area of the cross section of the auxiliary hole perpendicular to the depth direction of the auxiliary hole, and can also be understood as the area of the cross section of the auxiliary hole parallel to the first plane. The deeper the depth of the auxiliary hole is, the lower the frequency of the dielectric waveguide filter is; the larger the cross-sectional area of the auxiliary hole, the lower the frequency of the dielectric waveguide filter. Thus, by increasing at least one of the depth of the auxiliary hole and the cross-sectional area of the auxiliary hole, the frequency of the dielectric waveguide filter can be reduced.
Illustratively, fig. 6 shows a frequency versus depth of the auxiliary hole for an embodiment of the present disclosure. Wherein, the abscissa Hs represents the depth of the auxiliary hole in millimeters (mm); the ordinate re represents the response of the dielectric waveguide filter, which may be frequency; l31 represents the trend curve of frequency with depth. As shown in fig. 6, as the depth of the auxiliary hole increases, the frequency of the dielectric waveguide filter becomes smaller, that is, the frequency shifts to a lower frequency.
Illustratively, fig. 7 shows a plot of frequency versus radius of the secondary aperture for an embodiment of the present disclosure. Wherein the abscissa R2 represents the radius of the auxiliary pores in micrometers (μm); the ordinate re represents the response of the dielectric waveguide filter, which may be frequency; l32 represents the trend of frequency with radius. As shown in fig. 7, as the radius of the auxiliary hole increases, the frequency of the dielectric waveguide filter becomes smaller, that is, the frequency shifts to a lower frequency.
In some embodiments, on the basis of fig. 1, performing photolithography at the bottom of the blind via in S120 may specifically include:
and photoetching the bottom of the blind hole under the conditions of preset beam radius and preset beam energy.
The cross-sectional area of the auxiliary hole is in direct proportion to the radius of the light beam, and the depth of the auxiliary hole is in direct proportion to the energy of the light beam.
Based on the method, the radius of the auxiliary hole can be increased by increasing the radius of the preset light beam, and the frequency of the dielectric waveguide filter is reduced; by increasing the beam energy, the depth of the auxiliary hole can be increased, and the frequency of the dielectric waveguide filter can be reduced.
The preset beam radius and the preset beam energy may be set based on the frequency requirement of the dielectric waveguide filter, which is not limited in the embodiments of the present disclosure.
Illustratively, fig. 8 shows a graph of lithographic effects of the auxiliary holes at two different lithographic radii in an embodiment of the present disclosure. When the radius R00 of the blind hole 211 is the same, and the radius R01 of the first auxiliary hole 2121 is greater than the radius R02 of the second auxiliary hole 2122, the former is smaller than the latter corresponding to the frequency of the dielectric waveguide filter.
Illustratively, when the pass band frequency of the dielectric waveguide filter is required to be 3400MHz-3600MHz, fig. 9 shows a performance comparison diagram of a dielectric waveguide filter according to an embodiment of the present disclosure and an existing dielectric waveguide filter. Wherein the abscissa X represents frequency in hertz (Hz); the ordinate Y represents the Insertion Loss (Insertion Loss) in decibels (dB); l002 represents the electrical performance curve of the existing dielectric waveguide filter, characterizing the electrical performance of a product metallized without the photolithographic ceramic, L302 represents the electrical performance curve of the dielectric waveguide filter of the embodiments of the present disclosure, characterizing the electrical performance of the ceramic metallized after photolithographic tuning, and the curves in fig. 9 share the same abscissa. As can be seen by comparison, the passband of the filter is higher by 30MHz before photoetching debugging, and the passband frequency is lower by 10MHz after photoetching debugging. Therefore, the passband of the filter can be moved to a low level by means of photoetching ceramic and then metalizing.
In some embodiments, the material of the metal layer comprises silver.
Therefore, the electrical property requirement of the metal layer can be met, and the product cost can be ensured. In other embodiments, the material of the metal layer may also include copper, gold, or other conductive materials.
In some embodiments, the metal layer is formed in a manner including: immersion silver, electroplating, spraying, silk-screen printing or film coating.
Specifically, the step of metallizing the surface of the ceramic filter may adopt the manners of dipping silver, electroplating, spraying, silk-screen printing, plating, etc.
In some embodiments, the pattern of the metal layer includes at least one of a circle, an ellipse, a polygon, and a composite pattern.
In particular, the pattern can be flexibly set based on the requirements of the dielectric waveguide filter.
The embodiment of the disclosure provides a preparation method of a dielectric waveguide filter, which can realize laser inverse debugging. In the method, a filter substrate is obtained by pressing and sintering ceramic; photoetching is carried out in the blind hole of the filter substrate to form an auxiliary hole for adjusting the frequency; and carrying out a surface metallization process on the filter substrate after photoetching, thus photoetching patterns in the ceramic blind holes, removing partial ceramic on the surface, and then metalizing to realize the low frequency shift. Further, the larger the ceramic photoetching area of the dielectric waveguide filter is, the more the frequency moves towards the lower part, and the frequency moving direction is opposite to that of a conventional photoetching silver removing mode; the deeper the ceramic photoetching depth of the dielectric waveguide filter is, the more the frequency moves to the lower side, and the frequency moving direction is opposite to that of the conventional photoetching silver removing mode.
Compared with the existing dielectric waveguide filter debugging method which adopts manual polishing debugging, the laser debugging method is adopted in the embodiment of the invention, the frequency shift effect is achieved by removing the ceramic at the bottom of the blind hole, and the frequency can be shifted to a low frequency by removing the ceramic at the bottom of the blind hole; and laser debugging is adopted, the photoetching ceramic can be automatically produced in batches, the production efficiency is improved, the cost is reduced, and the problem of products in batches with high frequency in the production process is solved.
On the basis of the above embodiments, embodiments of the present disclosure also provide a dielectric waveguide filter, which can be formed by any one of the above methods for manufacturing a dielectric waveguide filter.
By way of example, with continuing reference to fig. 3 and 4, the dielectric waveguide filter 20 includes a dielectric body 200, the dielectric body 200 includes a first surface 201 and a second surface (not shown in the drawings) which are oppositely arranged, the first surface 201 is provided with a blind hole 211, and the bottom of the blind hole 211 is superposed with an auxiliary hole 212 for adjusting the frequency; and the surface of the dielectric body 200 is provided with a patterned metal layer 205.
Therefore, the auxiliary hole 212 is arranged at the bottom of the blind hole 211, so that the low frequency can be adjusted, and the problem of high-frequency batch products in the production process can be improved.
In some embodiments, the dielectric body 200 is made of a ceramic material, the metal layer 205 is made of a silver material, the blind holes 211 are formed by press sintering, and the auxiliary holes 212 are formed by laser lithography.
Thus, through laser photoetching of ceramic, the auxiliary hole 212 can be formed at the bottom of the blind hole 211, and laser inverse debugging is realized; meanwhile, the etching efficiency of the photoetching ceramic is high, for example, about 3 seconds is needed, the batch automatic production can be realized, the production efficiency is improved, and the cost is reduced.
In some embodiments, the frequency of the dielectric waveguide filter is reduced by increasing the cross-sectional area of the auxiliary holes and/or increasing the depth of the auxiliary holes.
Wherein, the deeper the depth of the auxiliary hole is, the lower the frequency of the dielectric waveguide filter is; the larger the cross-sectional area of the auxiliary hole, the lower the frequency of the dielectric waveguide filter. Based on this, by increasing at least one of the depth of the auxiliary hole and the cross-sectional area of the auxiliary hole, it is possible to achieve a reduction in the frequency of the dielectric waveguide filter.
According to the dielectric waveguide filter provided by the embodiment of the disclosure, the auxiliary hole 212 is arranged at the bottom of the blind hole 211, so that the low frequency can be adjusted, and the problem of high-frequency batch products in the production process can be improved.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
The previous description is only for the purpose of describing particular embodiments of the present disclosure, so as to enable those skilled in the art to understand or implement the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method of making a dielectric waveguide filter, comprising:
forming a medium body, wherein the medium body comprises a first surface and a second surface which are oppositely arranged, and the first surface is provided with a blind hole;
photoetching the bottom of the blind hole to form an auxiliary hole for adjusting the frequency;
forming a patterned metal layer on the surface of the dielectric body;
and carrying out photoetching treatment on the metal layer to increase the frequency.
2. The method of claim 1, wherein the forming a dielectric body comprises:
pressing the ceramic dielectric material into a green body;
and sintering the green body into a ceramic dielectric body at a preset temperature.
3. The production method according to claim 1, wherein when the frequency of the dielectric waveguide filter needs to be lowered, the depth of the auxiliary hole is increased and/or the cross-sectional area of the auxiliary hole is increased.
4. The method for preparing the blind via according to claim 3, wherein the photolithography is performed on the bottom of the blind via, and comprises:
photoetching the bottom of the blind hole under the conditions of preset beam radius and preset beam energy;
the cross-sectional area of the auxiliary hole is in direct proportion to the radius of the light beam, and the depth of the auxiliary hole is in direct proportion to the energy of the light beam.
5. The method of claim 1, wherein the pattern of the metal layer comprises at least one of a circle, an ellipse, a polygon, and a composite pattern.
6. The method according to claim 1, wherein the material of the metal layer comprises silver.
7. The method according to claim 6, wherein the metal layer is formed in a manner including: immersion silver, electroplating, spraying, silk-screen printing or film coating.
8. A dielectric waveguide filter is characterized by comprising a dielectric body, wherein the dielectric body comprises a first surface and a second surface which are oppositely arranged, the first surface is provided with a blind hole, and the bottom of the blind hole is superposed with an auxiliary hole for adjusting the frequency; and the surface of the medium body is provided with a patterned metal layer, and the metal layer is used for being subjected to photoetching treatment to increase the frequency.
9. The dielectric waveguide filter of claim 8 wherein the dielectric body is a ceramic material, the metal layer is a silver material, the blind holes are formed by press sintering, and the auxiliary holes are formed by laser lithography.
10. A dielectric waveguide filter according to claim 8, wherein the frequency of the dielectric waveguide filter is reduced by increasing the cross-sectional area of the auxiliary holes and/or increasing the depth of the auxiliary holes.
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| CN101013768A (en) * | 1999-06-15 | 2007-08-08 | Cts公司 | Ablative method for forming RF ceramic block filters |
| CN109509942A (en) * | 2013-04-16 | 2019-03-22 | 华为技术有限公司 | A kind of dielectric resonator, dielectric filter and manufacturing method |
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