CN112518110B - Laser processing method and laser processing apparatus - Google Patents
Laser processing method and laser processing apparatus Download PDFInfo
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- CN112518110B CN112518110B CN202010978979.5A CN202010978979A CN112518110B CN 112518110 B CN112518110 B CN 112518110B CN 202010978979 A CN202010978979 A CN 202010978979A CN 112518110 B CN112518110 B CN 112518110B
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- 238000012545 processing Methods 0.000 title claims abstract description 112
- 238000003672 processing method Methods 0.000 title claims abstract description 16
- 238000003384 imaging method Methods 0.000 claims abstract description 29
- 238000001514 detection method Methods 0.000 claims abstract description 23
- 230000001678 irradiating effect Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 description 50
- 230000005856 abnormality Effects 0.000 description 19
- 230000007246 mechanism Effects 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 8
- 238000002679 ablation Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
Provided are a laser processing method and a laser processing apparatus, wherein non-transitory anomalies in laser processing are easily noticeable. The laser processing method comprises the following steps: a processing step of irradiating a laser beam onto an upper surface side of a workpiece to process the workpiece; an imaging step of imaging the upper surface side of the workpiece at a predetermined timing in the processing step, and acquiring an image of an irradiated region of the irradiated laser beam on the upper surface side; a detection step of detecting, in the image obtained in the imaging step, at least one of the size and the position of an irradiated region that is a region brighter than the other regions; and a calculation step of repeating the imaging step and the detection step in the processing step for a plurality of different regions of the object to be processed, or performing the imaging step and the detection step in the processing step for a plurality of objects to be processed, respectively, and calculating a deviation of at least one of the size and the position of the irradiated region detected in each detection step.
Description
Technical Field
The present invention relates to a laser processing method and a laser processing apparatus for processing a workpiece by irradiating the workpiece with a laser beam.
Background
For example, a laser processing apparatus is used to process and divide a workpiece such as a semiconductor wafer. The laser processing device includes, for example: a laser oscillator that emits a pulsed laser beam; a condenser for condensing the laser beam emitted from the laser oscillator on the object to be processed; and a chuck table disposed below the condenser.
For example, when a workpiece is processed by a pulsed laser beam having a wavelength absorbed by the workpiece, the workpiece is first held by a chuck table. Next, the converging point of the laser beam is positioned on a line (i.e., a spacer) for dividing the workpiece, and the converging point and the chuck table are relatively moved along the line for dividing. Thus, the workpiece is ablated along the moving path to form a laser processing groove.
During the ablation process, it is checked whether the laser processing groove is formed according to the design. For example, it is checked whether or not the position of the converging point of the laser beam deviates from a predetermined processing position (for example, refer to patent document 1). In addition, during ablation processing, it is sometimes checked whether the width of the laser processing groove deviates from a set value (for example, see patent literature 2).
In addition, a pulsed laser beam having a wavelength absorbed by a workpiece is irradiated to the workpiece, and a plasma beam generated in an irradiated region of the laser beam is sometimes confirmed (for example, refer to patent document 3). An image of a processing region is acquired by photographing with a plasma beam, and a deviation between an irradiation position of a laser beam and a predetermined processing position is measured from the image.
In addition, a pulsed laser beam having a wavelength absorbed by a workpiece is irradiated to the workpiece, and a light emitting region generated in the irradiated region of the laser beam is sometimes confirmed (for example, refer to patent document 4). An image of the processing region is acquired by photographing the light-emitting region, and it is determined whether or not the shape of the light-emitting region deviates from a predetermined shape.
In an image obtained by capturing an irradiated region to which a laser beam is irradiated, the irradiated region is a region brighter than other regions, and is used for observing the laser processing situation in real time.
However, even when there is no particular abnormality in the laser processing apparatus, there is a case where the shape of the irradiated region in the image suddenly changes. In addition, there are cases where the position of the irradiated region suddenly deviates from the irradiation position of the laser beam.
In addition, although fragments (Debris) generated by the ablation process adhere to the glass cover provided at the lower part of the condenser, when the amount of adhering fragments increases as the process proceeds, the deviation of the shape and position of the irradiated region becomes large.
Patent document 1: japanese patent laid-open publication 2016-104491
Patent document 2: japanese patent application laid-open No. 2017-28030
Patent document 3: japanese patent laid-open publication No. 2017-120820
Patent document 4: japanese patent application laid-open No. 2018-202468
If the shape of the irradiated region in the image deviates from a predetermined shape, the processing may not be performed according to the design. In addition, when the position of the irradiated region in the image deviates from a predetermined processing position, there is a possibility that a device formed on the processed object may be damaged.
Disclosure of Invention
However, since the shape and position of the irradiated region in the image may change due to a sudden change, it is difficult to know whether the region is a temporary abnormality or a non-temporary abnormality due to a sudden change. The present invention has been made in view of the above-described problems, and an object thereof is to easily notice non-transitory abnormalities in laser processing.
According to one aspect of the present invention, there is provided a laser processing method for processing a workpiece by irradiating the workpiece with a pulsed laser beam having a wavelength absorbed by the workpiece, the laser processing method including: a holding step of holding the workpiece by a holding table; a processing step of irradiating the laser beam onto the upper surface side of the object held by the holding table to process the object; an imaging step of imaging the upper surface side of the workpiece at a predetermined timing in the processing step, and acquiring an image of an irradiated region of the upper surface side, on which the laser beam is irradiated; a detection step of detecting, in the image obtained in the imaging step, at least one of the size and the position of the irradiated region, which is a region brighter than the other regions; and a calculation step of repeating the imaging step and the detection step in the processing step for a plurality of different regions of the object to be processed, or performing the imaging step and the detection step in the processing step for a plurality of the objects to be processed, respectively, and calculating a deviation of at least one of the size and the position of the irradiated region detected in each detection step.
Preferably, the laser processing method further has the following warning step: when the deviation of at least one of the size and the position of the irradiated area calculated in the calculating step exceeds a preset threshold value, a warning is issued.
According to another aspect of the present invention, there is provided a laser processing apparatus for processing a workpiece by irradiating the workpiece with a pulsed laser beam having a wavelength absorbed by the workpiece, the laser processing apparatus including: a holding table for holding the workpiece; a photographing unit that photographs the object held by the holding table; a laser beam irradiation unit that irradiates the laser beam; a detection unit that detects at least one of a size and a position of an irradiated region, which is a region brighter than other regions, in an image obtained by photographing an irradiated region of the upper surface side, on which the laser beam is irradiated, with the photographing unit at a predetermined timing of processing the object by irradiating the laser beam from the laser beam irradiation unit to the upper surface side of the object held by the holding table; and a calculating unit that calculates a deviation of at least one of the size and the position of the irradiated region detected by the detecting unit.
In the laser processing method according to one embodiment of the present invention, the upper surface side of the workpiece is photographed at a predetermined timing in the processing step, and an image of the irradiated region of the irradiated laser beam on the upper surface side is obtained (photographing step). In the image obtained in the photographing step, at least one of the size and the position of the irradiated region, which is a region brighter than the other regions, is detected (detecting step).
Further, the imaging step and the detecting step in the processing step are repeated for a plurality of different regions of the object to be processed, or the imaging step and the detecting step in the processing step are performed for a plurality of objects to be processed, respectively. Then, a deviation of at least one of the size and the position of the irradiated region detected in each detection step is calculated (calculation step).
In the calculation step, since the deviation of at least one of the shape and the position of the irradiated region is quantitatively evaluated, the operator easily notices a non-temporary abnormality in the laser processing. This can prevent the abnormality of the laser processing from being ignored, and can prevent the degradation of the processing quality.
Drawings
Fig. 1 is a perspective view of a laser processing apparatus.
Fig. 2 is a diagram showing a structural example of the laser beam irradiation unit.
Fig. 3 is a timing chart illustrating the imaging of a wafer.
Fig. 4 is a flow chart of a laser processing method.
Fig. 5 is a partial cross-sectional side view of a wafer or the like showing a holding step.
Fig. 6 is a partial cross-sectional side view of a wafer or the like showing a processing step.
Fig. 7 is an example of an image obtained in the photographing step.
Fig. 8 is a graph showing a deviation in the size of the irradiated region.
Fig. 9 (a) is an example of an image in the case where the center line of the division scheduled line coincides with the center line of the irradiated region, and fig. 9 (B) is an example of an image in the case where the center line of the division scheduled line does not coincide with the center line of the irradiated region.
Fig. 10 is an example of an image having two irradiated regions according to embodiment 2.
Description of the reference numerals
11: A wafer (workpiece); 11a: front (upper surface); 11b: a back surface; 13: dividing a predetermined line; 13a: a center line; 15: a device; 17: a frame; 19: a protective tape; 21: a wafer unit; 23: processing marks; 25: an irradiated region; 25a: a center line; 27: a key pattern; 2: a laser processing device; 4: a base station; 6: chuck table (holding table); 6a: a holding surface; 6b: a clamp unit; 8: a horizontal movement mechanism (processing feeding member, indexing feeding member); 10: an X-axis guide rail; 12: an X-axis movable workbench; 14: an X-axis ball screw; 16: an X-axis pulse motor; 18: a Y-axis guide rail; 20: y-axis moving workbench; 22: a Y-axis ball screw; 24: a Y-axis pulse motor; 26: a workbench mounting base; 28: a cover; 30: a support structure; 30a: a column section; 30b: an arm section; 32: a laser beam irradiation unit; 32a: a condenser; 32b: a condensing lens; 34: a1 st camera unit; 36: a laser beam generating section; 38: a laser oscillator; 40: a repetition frequency setting unit; 42: a dichroic mirror; 50: a strobe light irradiation unit; 52: a strobe light source; 54: an aperture; 56: a collimating lens; 58: a reflecting mirror; 60: a beam splitter; 62: a2 nd camera unit (photographing unit); 64: a lens group; 64a: an aberration correcting lens; 64b: an imaging lens; 66: a photographing element; 70: a control unit; 72: a detection unit; 74: a calculation unit; l: a laser beam; d: distance.
Detailed Description
An embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a perspective view of a laser processing apparatus 2. In fig. 1, a part of the components of the laser processing apparatus 2 is shown as functional blocks.
By using the laser processing apparatus 2, for example, a wafer (workpiece) 11 mainly made of a semiconductor material such as silicon is processed. The wafer 11 has a disk shape, and the thickness from the front surface 11a to the back surface 11b is, for example, about 10 μm to 800 μm.
The material, shape, structure, size, and the like of the workpiece are not limited. For example, the workpiece may be mainly made of a semiconductor material other than silicon such as gallium arsenide (GaAs) or silicon carbide (SiC), glass, resin, ceramic, or the like, or may be other than circular.
A plurality of lines (streets) 13 for dividing are set on the wafer 11 (see fig. 5, etc.). Devices 15 such as ICs (INTEGRATED CIRCUIT: integrated circuits) and LSIs (large scale integrated circuits) are provided in the regions on the front surface 11a side divided by the plural lines 13. A key pattern 27 (see fig. 9) (also referred to as a target pattern or an alignment mark) is included on the front surface of each device 15.
A metal ring-shaped frame 17 is disposed around the wafer 11, and the frame 17 has an opening with a diameter larger than that of the wafer 11. A protective tape 19 of a substantially circular shape having a diameter larger than that of the opening of the frame 17 is attached to one surface of the frame 17 and the back surface 11b of the wafer 11.
The protective tape 19 is a resin film, and has a laminated structure including an adhesive layer (not shown) having adhesiveness and a base layer (not shown) having no adhesiveness. The adhesive layer is, for example, an ultraviolet-curable resin layer, and is provided on the entire surface of the resin base layer.
By tightly adhering the adhesive layer side of the protective tape 19 to the back surface 11b side of the wafer 11 and the outer peripheral portion of the frame 17, a wafer unit 21 is formed in which the wafer 11 is supported by the frame 17 via the protective tape 19.
The laser processing device 2 has a substantially rectangular parallelepiped base 4 on which each component is mounted. A chuck table (holding table) 6 for holding the wafer unit 21 is provided on the upper surface side of the base 4.
A horizontal movement mechanism (machining feed member, indexing feed member) 8 is provided below the chuck table 6, and the horizontal movement mechanism 8 moves the chuck table 6 in the X-axis direction (machining feed direction) and the Y-axis direction (indexing feed direction).
The horizontal movement mechanism 8 has a pair of X-axis guide rails 10, and the pair of X-axis guide rails 10 are fixed to the upper surface of the base 4 and are substantially parallel to the X-axis direction. An X-axis moving table 12 is slidably mounted on the X-axis guide rail 10.
A nut portion (not shown) is provided on the rear surface side (lower surface side) of the X-axis moving table 12, and an X-axis ball screw 14 substantially parallel to the X-axis guide rail 10 is rotatably coupled to the nut portion.
An X-axis pulse motor 16 is connected to one end of the X-axis ball screw 14. The X-axis moving table 12 moves in the X-axis direction along the X-axis guide rail 10 by rotating the X-axis ball screw 14 with the X-axis pulse motor 16.
A pair of Y-axis guide rails 18 substantially parallel to the Y-axis direction are fixed to the front surface (upper surface) of the X-axis moving table 12. A Y-axis moving table 20 is slidably mounted on the Y-axis guide 18.
A nut portion (not shown) is provided on the rear surface side (lower surface side) of the Y-axis moving table 20, and a Y-axis ball screw 22 substantially parallel to the Y-axis guide rail 18 is rotatably coupled to the nut portion.
A Y-axis pulse motor 24 is connected to one end of the Y-axis ball screw 22. The Y-axis moving table 20 moves along the Y-axis guide 18 in the Y-axis direction by rotating the Y-axis ball screw 22 with the Y-axis pulse motor 24.
A table mount 26 is provided on the front (upper surface) of the Y-axis moving table 20, and the chuck table 6 is disposed above the table mount 26 with a cover 28 interposed therebetween.
The upper surface of the chuck table 6 serves as a holding surface 6a for holding the wafer 11. A part of the holding surface 6a is formed of a disk-shaped porous member, and the porous member is connected to a suction source (not shown) such as an ejector via a suction path (not shown) or the like formed in the chuck table 6.
When the suction source is operated, a negative pressure is generated on the upper surface (a part of the holding surface 6 a) of the porous member. When the wafer unit 21 is placed on the holding surface 6a so that the protective tape 19 side contacts the holding surface 6a, the back surface 11b side of the wafer 11 is sucked and held by the holding surface 6a when negative pressure is generated.
Four jig units 6b for fixing the frame 17 from the periphery are provided around the holding surface 6 a. A rotation drive source (not shown) is coupled to the table mount 26, and the chuck table 6 is rotated about a rotation axis substantially parallel to the Z-axis direction (vertical direction) by the rotation drive source.
A support structure 30 is provided in a region different from the horizontal movement mechanism 8 in the upper surface of the base 4. The support structure 30 has a columnar column portion 30a. An arm portion 30b extending in the Y-axis direction is provided at the upper end of the column portion 30a so as to protrude toward the horizontal movement mechanism 8 side.
The arm portion 30b is provided with a laser beam irradiation unit 32. The laser beam irradiation unit 32 has a condenser 32a for irradiating the laser beam to the wafer 11 attracted and held by the chuck table 6. The condenser 32a is located on the front end side of the arm portion 30 b.
A1 st camera unit 34 for photographing the wafer 11 and the like held by the chuck table 6 is provided at a position adjacent to the condenser 32 a. The 1 st camera unit 34 is used for adjustment (i.e., alignment) of the positions of the wafer 11 and the laser beam irradiation unit 32, for example.
Here, details of the laser beam irradiation unit 32 will be described with reference to fig. 2. Fig. 2 is a diagram showing a structural example of the laser beam irradiation unit 32. In fig. 2, a part of the constituent elements of the laser beam irradiation unit 32 is shown by a block.
In fig. 2, although the frame 17 and the protective tape 19 are omitted, the wafer 11 is held by the holding surface 6a with the protective tape 19 interposed therebetween so that the front surface 11a is exposed to the back surface 11b side of the wafer 11.
The laser beam irradiation unit 32 has a laser beam generating section 36. The laser beam generating unit 36 includes a laser oscillator 38 that emits a pulsed laser beam. The laser oscillator 38 contains Nd suitable for laser oscillation: YAG, nd: YVO 4, etc.
The laser oscillator 38 is connected to a repetition frequency setting unit 40 that sets the repetition frequency of pulses of the laser beam. The laser beam L emitted from the laser beam generating section 36 has a wavelength absorbed by the wafer 11, for example.
In the case where the wafer 11 is mainly formed of silicon, the wavelength absorbed by the wafer 11 is 355nm, for example. The repetition frequency of the laser beam L used is, for example, 50kHz, and the average output of the laser beam L is, for example, 3.0W.
The laser beam generating unit 36 further includes a wavelength converting unit that converts the wavelength of the laser beam emitted from the laser oscillator 38, a pulse width adjusting unit that adjusts the pulse width of the laser beam, a power adjusting unit (neither of which is shown) that adjusts the output of the laser beam, and the like.
A dichroic mirror 42 is provided near the laser beam generating section 36. The dichroic mirror 42 reflects light of the wavelength (for example, 355 nm) of the laser beam L, but transmits light of other wavelength bands.
A condenser 32a is provided below the dichroic mirror 42. A condensing lens 32b for condensing the laser beam L on the front (upper) surface 11a side of the wafer 11 is provided in the condenser 32a.
The laser beam L emitted from the laser beam generating unit 36 is reflected by the dichroic mirror 42, and then passes through the condensing lens 32b to be condensed on the front surface 11a side of the wafer 11. The wafer 11 is, for example, ablated by the converging point of the laser beam L irradiated on the wafer 11.
The laser beam irradiation unit 32 of the present example has a strobe light irradiation section 50 in addition to the laser beam generation section 36. The strobe light irradiation section 50 has a strobe light source 52 that instantaneously emits white light. The strobe light source 52 is, for example, a xenon flash lamp.
The strobe light source 52 emits light periodically at intervals of 100 μs, for example, to emit white light. Light emitted from the strobe light source 52 passes through the aperture 54 and is incident on the collimator lens 56. The aperture 54 adjusts the amount of light incident from the strobe light source 52 to the collimator lens 56, and the collimator lens 56 converts the light passing through the aperture 54 into parallel light.
A reflecting mirror 58 is provided on the opposite side of the collimator lens 56 from the diaphragm 54. The light emitted from the collimator lens 56 is reflected by the reflecting mirror 58 and travels toward the dichroic mirror 42.
A beam splitter 60 is provided between the mirror 58 and the dichroic mirror 42. As described above, the beam splitter 60 transmits a part of the light reflected by the reflecting mirror 58 toward the dichroic mirror 42. The light transmitted through the dichroic mirror 42 passes through the condenser lens 32b and irradiates the front surface 11a side of the wafer 11.
The light reflected from the front surface 11a side of the wafer 11 is transmitted through the dichroic mirror 42, and a part thereof is reflected by the beam splitter 60 and guided to the 2 nd camera unit (photographing unit) 62.
The 2 nd camera unit 62 includes a lens group 64, and the lens group 64 has an aberration correcting lens 64a and an imaging lens 64b. The lens group 64 guides the incident light from the beam splitter 60 toward a photographing element 66 constituted by a CMOS (Complementary Metal Oxide Semiconductor: complementary metal oxide semiconductor) image sensor, a CCD (Charge Coupled Device: charge coupled device) image sensor, or the like.
Then, information (electric signal) for constituting an image is formed through photoelectric conversion in the imaging element 66. Information constituting the image is output to a control unit 70 described later. Here, light received by the imaging element 66 will be described with reference to fig. 3.
Fig. 3 is a timing chart illustrating the imaging of the wafer 11. The horizontal axis is time (μs). As described above, in the case where the repetition frequency of the laser beam irradiation unit 32 is 50kHz, one pulse of the laser beam L is irradiated to the wafer 11 every 20 μs. In fig. 3, pulses representing the laser beam L are labeled Ls.
The strobe light source 52 irradiates the wafer 11 at a timing different from the irradiation timing of the laser beam L. The strobe light of this example is irradiated onto the wafer 11 at a predetermined timing (50 μs in fig. 3), and then irradiated onto the wafer 11 every 100 μs. In fig. 3, pulses representing strobe light are denoted by St.
A shutter (not shown) is provided in the 2 nd camera unit 62, and the timing of shooting, the shooting time, and the like are adjusted by appropriately controlling the timing of opening and closing the shutter. In this example, the shutter is opened immediately before the strobe light at a predetermined timing emits light, and for example, the shutter is opened for a predetermined time of 50 to 70 μs, and light is taken into the imaging element 66 to perform imaging. In fig. 3, the shooting time is denoted by t.
An image including light (plasma light) generated in an irradiated region of the laser beam L by ablation processing of a part of the wafer 11 by the laser beam L is acquired by the 2 nd camera unit 62. The image also includes a line 13 to be divided irradiated with strobe light and its surroundings (for example, a key pattern described later). In this way, at a predetermined timing in the processing of the wafer 11, an image including the light emission of the laser beam L in the irradiated region, the reflected light of the stroboscopic light, and the like is acquired.
Here, referring back to fig. 1, other components of the laser processing apparatus 2 will be described. The laser processing apparatus 2 has a control unit 70. The control unit 70 controls the operations of the respective components such as the horizontal movement mechanism 8, the laser beam irradiation unit 32, and the 1 st camera unit 34, so as to appropriately process the wafer 11.
The control unit 70 is, for example, a computer, and has CPU, ROM, RAM, a hard disk drive, an input-output device, and the like, which are connected to each other via a main controller. The CPU performs arithmetic processing or the like in accordance with programs, data, or the like stored in a storage section such as a ROM, a RAM, a hard disk drive, or the like.
The control unit 70 functions as a specific means of cooperation of software and hardware resources by the CPU reading in the program stored in the storage section. The control unit 70 has a detection section 72. The detection section 72 is constituted by, for example, a program stored in a storage section.
The detection unit 72 is, for example, an image processing unit that performs processing of edge detection on the image acquired by the 2 nd camera unit 62. The detection unit 72 performs measurement of the length of the measurement object in the predetermined direction, calculation of coordinates of the edge of the measurement object, and the like. Therefore, at least one of the size and the position of the irradiated region 25 (see fig. 7) of the laser beam L in the image is detected by the detecting section 72.
The irradiated region 25 is a region brighter than the other regions in the image acquired by the 2 nd camera unit 62. In addition, when the brightness of the acquired image is inverted, the illuminated area 25 may be displayed darker, but in this case, the determination of the illuminated area 25 is not hindered.
The control unit 70 also has a calculation section 74. The calculation section 74 is constituted by, for example, a program stored in a storage section. The calculating unit 74 calculates a deviation of at least one of the size and the position of the irradiated region 25 detected by the detecting unit 72 for a plurality of different regions of the wafer 11 according to a predetermined function.
The laser processing apparatus 2 is provided with a monitor (not shown). The monitor is, for example, a touch panel type monitor. The monitor functions as an input unit for receiving an input from an operator and a display unit for displaying processing conditions, processing results, and the like.
The monitor is configured to display a warning of occurrence of an abnormality or the like when the laser processing apparatus 2 is abnormal. The laser processing device 2 is provided with a speaker and a warning lamp (both not shown), and the warning lamp is set to flash while sounding an alarm when an abnormality occurs in the laser processing device 2.
Next, a laser processing method for performing ablation processing on the wafer 11 using the laser processing apparatus 2 will be described. Fig. 4 is a flow chart of a laser processing method. In the laser processing method according to embodiment 1, first, the wafer unit 21 is placed on the holding surface 6a so that the front surface 11a is exposed.
Next, the suction source is operated, and the back surface 11b side is held by the holding surface 6a (holding step (S10)). Fig. 5 is a partial cross-sectional side view showing the wafer 11 and the like in the holding step (S10).
Next, the chuck table 6 is positioned directly below the condenser 32a, and alignment is performed using the 1 st camera unit 34, and the rotation driving source and the horizontal movement mechanism 8 are operated to position one line of division scheduled 13 parallel to the X axis.
Then, the chuck table 6 is moved in the X-axis direction at a predetermined processing feed speed (for example, 100 mm/s) while the light converging point of the laser beam L is positioned on one of the dividing lines 13 on the front surface 11a side.
Thus, the laser beam L is irradiated to the front surface 11a along the path of the movement of the converging point, and the wafer 11 is ablated along one line of the planned dividing line 13 (processing step (S20)). Fig. 6 is a partial cross-sectional side view of the wafer 11 and the like showing the processing step (S20).
In the present embodiment, the front face 11a side is photographed using the 2 nd camera unit 62 at a predetermined timing in the processing step (S20). For example, the front face 11a side is photographed once for one division line 13. Thereby, the irradiated region 25 of the irradiated laser beam L on the front surface 11a side is photographed, and an image is acquired (photographing step (S30)).
Fig. 7 is an example of an image obtained in the photographing step (S30). In this example, the processing mark 23 corresponding to the movement path of the converging point is shown, but depending on the method of photographing, the processing mark 23 may not necessarily be shown.
The irradiated region 25 of the laser beam L, which is displayed relatively brightly, exists in the substantial center of the image. The range of the light emitting region of the plasma generated by the irradiation of the laser beam L corresponds to the range of the irradiated region 25 of the laser beam L.
The width of the irradiated region 25 in the Y-axis direction in this example is longer than the width in the X-axis direction (i.e., is an elongated region). In the present embodiment, the detection unit 72 detects at least one of the size and the position of the irradiated region 25 (detection step (S40)).
After the laser beam L is irradiated along one line 13, the chuck table 6 is moved in the Y-axis direction by the horizontal movement mechanism 8. Thus, the condenser 32a is positioned directly above the other line to divide 13 adjacent to the one line to divide 13 in the Y-axis direction.
Then, the processing step (S20), the photographing step (S30), and the detecting step (S40) are performed similarly. In this way, after the processing step (S20), the imaging step (S30), and the detecting step (S40) are performed on all the lines 13 to be divided along the X-axis direction, the chuck table 6 is rotated by 90 degrees by operating the rotation driving source.
Then, the processing step (S20), the photographing step (S30), and the detecting step (S40) are performed similarly for all the lines 13 along the X-axis direction. In this way, the imaging step (S30) and the detecting step (S40) in the processing step (S20) are repeated for a plurality of different regions of the wafer 11.
The calculating unit 74 calculates a deviation of at least one of the size and the position of the irradiated region 25 detected in each detecting step (S40) (calculating step (S50)). The timing of performing the calculation step (S50) is appropriately set according to the type of the workpiece, the processing conditions, and the like. First, an example in which the deviation of the size of the irradiated region 25 is calculated in the calculating step (S50) will be described.
Fig. 8 is a graph showing the deviation of the size of the irradiated region 25. The horizontal axis represents the order of obtaining the irradiated regions 25, and corresponds to the elapsed time from the start of processing. The vertical axis is the dimension (μm) of the length direction of the irradiated region 25 in the direction perpendicular to the length direction of the line to divide 13 during processing (i.e., the Y-axis direction).
In this example, for 20 irradiated regions 25, the standard deviation s is calculated each time the size of the irradiated region 25 in the longitudinal direction (hereinafter, the size of the irradiated region 25) is measured. The standard deviation s is represented by the following equation 1.
[ Math 1]
Here, i and n are natural numbers, i denotes the order of the acquired irradiated regions 25, and n denotes the total number of the acquired irradiated regions 25. x i is the size of the i-th acquired irradiated region 25. In addition, the character with a horizontal line attached to the upper part of x is an average value from x 1 to x n.
In this example, s=0.19 in the case where n=20. In addition, s=0.21 in the case of n=40, and s=0.28 in the case of n=60. Thus, the standard deviation s of this example gradually increases as the measurement progresses. That is, as the processing time passes, the variation in the size of the irradiated region 25 becomes large.
In the calculation step (S50), since the deviation of the shape of the irradiated region 25 is quantitatively evaluated, the operator easily notices a non-temporary abnormality in the laser processing. This can prevent the abnormality of the laser processing from being ignored, and can prevent the degradation of the processing quality. The variation in the size of the irradiated region 25 (i.e., the graph shown in fig. 8) may be displayed on the monitor of the laser processing apparatus 2.
As the processing time elapses, the deviation in the size of the irradiated region 25 tends to be large, and therefore, a threshold value of the deviation may be set in advance. In this case, when the deviation of the size of the irradiated region 25 calculated in the calculating step (S50) exceeds a preset threshold value, the laser processing apparatus 2 issues an alarm such as an alarm display, an alarm sound, or a lamp flashing (alarm step (S60)).
This enables the operator to clearly grasp the occurrence of an abnormality in the laser processing apparatus 2. When the laser processing apparatus 2 is alerted, the operator stops the operation of the laser processing apparatus 2 and performs emergency treatment (for example, removing the fragments adhering to the condenser 32 a). Further, it is preferable to identify the cause of the abnormality.
Next, an example in which the deviation of the position of the irradiated region 25 is calculated in the calculating step (S50) will be described. Fig. 9 (a) shows an example of an image in the case where the center line 13a of the line to be divided 13 coincides with the center line 25a of the irradiated region 25.
The center line 13a of the line 13 is detected by the detecting unit 72 based on, for example, a pattern (i.e., the key pattern 27) of a metal or the like having a predetermined geometric shape provided at a corner of the device 15 in a plan view of the device 15.
Fig. 9 (B) is an example of an image in the case where the center line 13a of the line to divide 13 does not coincide with the center line 25a of the irradiated region 25. The Y-coordinate of the center line 25a shown in fig. 9 (B) is offset from the Y-coordinate of the center line 13a by a distance d in the Y-axis direction.
The calculation unit 74 also calculates the standard deviation s using equation 1 for the Y coordinate of the center line 25 a. But Y i representing the Y coordinate of the center line 25a is used instead of x i of the mathematical formula 1, and an average value from Y 1 to Y n is used instead of an average value from x 1 to x n.
In this way, in the calculation step (S50), since the deviation of the position of the irradiated region 25 (i.e., the Y coordinate of the center line 25 a) is quantitatively evaluated, the operator easily notices a non-temporary abnormality in the laser processing. This can prevent the abnormality of the laser processing from being ignored, and can prevent the degradation of the processing quality. The deviation of the position of the irradiated region 25 obtained in the calculation step (S50) may be displayed on a monitor of the laser processing apparatus 2.
In addition, a threshold value of the deviation of the position of the irradiated region 25 may be set in advance. In this case, when the deviation of the position of the irradiated region 25 calculated in the calculating step (S50) exceeds a preset threshold value, the laser processing apparatus 2 issues an alarm such as an alarm display, an alarm sound, or a lamp flashing (alarm step (S60)).
This enables the operator to clearly grasp the occurrence of an abnormality in the laser processing apparatus 2. In the calculation step (S50) and the warning step (S60), either one or both of the deviation in the size of the irradiated region 25 and the deviation in the position of the irradiated region 25 may be used.
In embodiment 1, one shot is performed for one division line 13, and one irradiated region 25 is detected. However, it is also possible to perform one shot for one line of division scheduled 13 and detect a plurality of irradiated regions 25 for one line of division scheduled 13. Fig. 10 shows an example of an image having two irradiated regions 25 according to embodiment 2.
In embodiment 2, the laser beam L is simultaneously irradiated to two different portions in one line 13 to be divided, and the two irradiated regions 25 are detected. For example, by branching the laser beam L emitted from the laser beam irradiation unit 32 into two, laser processing can be performed simultaneously on two different portions of one line 13.
In embodiment 2, the deviation of at least one of the size and the position of the irradiated region 25 is quantitatively evaluated by performing the holding step (S10) to the warning step (S60). Therefore, the operator easily notices a non-transitory abnormality in the laser processing. This can prevent the abnormality of the laser processing from being ignored, and can prevent the degradation of the processing quality.
Next, embodiment 3 will be described. In embodiment 3, the imaging step (S30) and the inspection step (S40) in the one-time processing step (S20) are performed for one wafer 11. However, by performing the imaging step (S30) and the detecting step (S40) in the processing step (S20) on the plurality of wafers 11, the deviation of at least one of the size and the position of the irradiated region 25 is calculated in the calculating step (S50).
In embodiment 3, the operator easily notices a non-temporary abnormality in laser processing. This can prevent the abnormality of the laser processing from being ignored, and can prevent the degradation of the processing quality.
In addition, the structure, method, and the like of the above-described embodiment can be implemented with appropriate modifications within a range not departing from the object of the present invention. For example, the index of the deviation used in the calculation step (S50) is not limited to the standard deviation S. Variance or other indicators obtained by squaring the standard deviation s may also be used.
Claims (2)
1. A laser processing method for processing a workpiece by irradiating the workpiece with a pulsed laser beam having a wavelength absorbed by the workpiece, characterized in that,
The laser processing method comprises the following steps:
a holding step of holding the workpiece by a holding table;
A processing step of irradiating the laser beam onto the upper surface side of the object held by the holding table to process the object;
An imaging step of imaging the upper surface side of the workpiece at a predetermined timing in the processing step, and acquiring an image of an irradiated region of the upper surface side, on which the laser beam is irradiated;
A detection step of detecting, in the image obtained in the imaging step, at least one of the size and the position of the irradiated region, which is a region brighter than the other regions; and
A calculation step of repeating the imaging step and the detection step in the processing step for a plurality of different regions of the object to be processed, or performing the imaging step and the detection step in the processing step for a plurality of the objects to be processed, respectively, and calculating a standard deviation or a variance of at least one of a size and a position of the plurality of the irradiated regions detected in each detection step,
The laser processing method also has the following warning steps: when the standard deviation or variance of at least one of the sizes and positions of the plurality of irradiated regions calculated in the calculating step exceeds a predetermined threshold value, a warning is issued.
2. A laser processing apparatus for processing a workpiece by irradiating the workpiece with a pulsed laser beam having a wavelength absorbed by the workpiece,
The laser processing device comprises:
A holding table for holding the workpiece;
A photographing unit that photographs the object held by the holding table;
a laser beam irradiation unit that irradiates the laser beam;
a detection unit that detects at least one of a size and a position of an irradiated region, which is a region brighter than other regions, in an image obtained by photographing an irradiated region of the upper surface side, on which the laser beam is irradiated, with the photographing unit at a predetermined timing of processing the object by irradiating the laser beam from the laser beam irradiation unit to the upper surface side of the object held by the holding table; and
A calculation unit that calculates a standard deviation or a variance of at least one of the sizes and positions of the plurality of irradiated regions detected by the detection unit,
The laser processing device also has a monitor, a speaker or a warning light,
The monitor displays a warning when the standard deviation or variance of at least one of the size and the position of the plurality of irradiated regions detected by the detecting unit exceeds a preset threshold,
The speaker sounds an alarm when a standard deviation or a variance of at least one of the size and the position of the plurality of irradiated areas detected by the detecting section exceeds a predetermined threshold,
The warning lamp blinks when a standard deviation or variance of at least one of the sizes and positions of the plurality of irradiated regions detected by the detecting unit exceeds a preset threshold.
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