CN112489848A - Semiconductor radiation battery - Google Patents
Semiconductor radiation battery Download PDFInfo
- Publication number
- CN112489848A CN112489848A CN202011416015.8A CN202011416015A CN112489848A CN 112489848 A CN112489848 A CN 112489848A CN 202011416015 A CN202011416015 A CN 202011416015A CN 112489848 A CN112489848 A CN 112489848A
- Authority
- CN
- China
- Prior art keywords
- graphene
- semiconductor
- electrode
- battery
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 229910003465 moissanite Inorganic materials 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000000926 separation method Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000000233 ultraviolet lithography Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a semiconductor radiation battery, mainly comprising: the graphene-based photovoltaic module comprises a semiconductor conversion layer, a graphene upper electrode and a metal lower electrode, wherein the semiconductor conversion layer, the graphene upper electrode and the metal lower electrode are sequentially formed on a substrate. The characteristic of small atomic number of graphene is utilized to break through the defect that the cell conversion efficiency is reduced due to the deposition effect of a metal upper electrode on Beta particles in the traditional Beta radiation cell. The Beta electron high-transmittance electrode is realized, and meanwhile, the high carrier mobility of graphene is combined, so that the separation of electron-hole pairs generated by radiation is enhanced, the conversion efficiency of the battery is further improved, and the high-efficiency semiconductor radiation battery is realized.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a semiconductor radiation battery.
Background
The nuclear battery has the characteristics of high energy density, long service life, no influence of external environment and the like, and has wide application prospects in the fields of aerospace, deep sea exploration and micro motors. In particular, the semiconductor radiation battery using the radiation volt effect has the characteristics of small volume, light weight and easy integration. With the maturity of semiconductor material preparation technology, the material becomes the most potential energy conversion material of radiation battery. In the traditional nuclear battery preparation process, the common electrode material is metal or alloy such as Al, Cu, Au, Ni, Ag, Pt and the like. However, the deposition of the emission source in the metal electrode layer is substantially converted into heat energy, and the higher the atomic number, the greater the deposition probability. Therefore, the electrode is generally a thin metal electrode with a small atomic number. However, the metal electrodes commonly used at present have large atomic numbers.
Disclosure of Invention
In order to overcome the existing technical problems, the invention provides a graphene electrode semiconductor Beta radiation battery. The graphene is composed of carbon elements, has a low atomic number, and can reduce the deposition of an emission source; meanwhile, the organic electroluminescent device has high carrier mobility, and can realize rapid separation of electron-hole pairs. Therefore, the effective absorption efficiency and the energy conversion efficiency of the radiation battery can be improved.
In order to achieve the purpose, the invention adopts the following specific technical scheme: the semiconductor radiation battery is characterized by comprising a semiconductor conversion layer, a graphene upper electrode and a metal lower electrode, wherein the semiconductor conversion layer and the graphene upper electrode are sequentially formed above a substrate, and the metal lower electrode is formed below the substrate.
Preferably, the thickness of the graphene upper electrode layer is 1-100 nm.
Preferably, the material of the semiconductor conversion layer is selected from any one of SiC, GaN, ZnO, and diamond.
Preferably, the structure of the semiconductor conversion layer is any one of a PN junction structure, a PIN junction structure, or a schottky structure.
Preferably, the lower metal electrode material is any one of Ti, Al, and Au.
Preferably, the contact type of the metal electrode is an ohmic contact.
Preferably, the preparation method of the graphene upper electrode of the semiconductor Beta radiation battery comprises the following steps:
s1: the thermal decomposition method of silicon carbide is mainly used in silicon carbide radiation battery.
S2: the wet transfer CVD graphene method can be applied to radiation batteries made of any materials, such as SiC, GaN, ZnO and diamond radiation detectors.
S3: the method for spin coating, drip coating and spray coating the graphene solution can be applied to radiation batteries made of any materials, such as SiC, GaN, ZnO and diamond radiation detectors.
Preferably, a metal wiring point is prepared on the graphene upper electrode by using a mask method, so that the preparation of the graphene electrode Beta radiation battery is completed.
The invention can obtain the following technical effects:
1. the graphene atomic number is small, the defect that the cell conversion efficiency is reduced due to the deposition effect of metal electrodes on Beta particles in the traditional Beta radiation cell is overcome, and the cell conversion efficiency is improved.
2. The graphene has high carrier mobility, promotes the separation of electrons and holes, and improves the conversion efficiency of the battery.
Drawings
Fig. 1 is a schematic structural diagram of a PN-type semiconductor radiation battery according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a PIN-type semiconductor radiation battery according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a schottky-type semiconductor radiation cell according to an embodiment of the present invention.
Wherein the reference numerals include:
the structure comprises a substrate 1, a semiconductor conversion layer 2, a graphene upper electrode 3 and a metal lower electrode 4.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
A semiconductor radiation cell provided by the present invention will be described in detail below.
The invention provides a semiconductor radiation battery, which mainly comprises: a semiconductor conversion layer 2, an upper electrode and a metal lower electrode 4 formed below the substrate 1 in sequence on the substrate 1; wherein the upper electrode is a graphene upper electrode 3 with Beta electron high transmittance. The characteristic of small atomic number of graphene is utilized to break through the defect that the cell conversion efficiency is reduced due to the deposition effect of a metal upper electrode on Beta particles in the traditional Beta radiation cell. The Beta electron high-transmittance electrode is realized, and meanwhile, the high carrier mobility of graphene is combined, so that the separation of electron-hole pairs generated by radiation is enhanced, and the conversion efficiency of the battery is further improved. A high-efficiency semiconductor radiation battery is realized.
The substrate 1 may be any base material that is sufficient for the growth of a radiation absorbing layer.
The framework of the semiconductor conversion layer 2 can be a PN junction structure, a PIN junction structure or a Schottky structure;
the material choice for the metal lower electrode 4 may be Ti/Al/Au;
the contact type of the metal lower electrode 4 is ohmic contact;
for the material selection of the semiconductor conversion layer 2, different materials can be selected according to different preparation methods;
the preparation method of the graphene electrode can be selected according to different requirements, and comprises the following steps:
s1: the thermal decomposition method of silicon carbide is mainly used in silicon carbide radiation battery.
S2: the wet transfer CVD graphene method can be applied to radiation batteries made of any materials, such as SiC, GaN, ZnO and diamond radiation detectors.
S3: the method for spin coating, drip coating and spray coating the graphene solution can be applied to radiation batteries made of any materials, such as SiC, GaN, ZnO and diamond radiation detectors.
Fig. 1 is a schematic structural diagram of a PN-type semiconductor radiation battery according to an embodiment of the present invention.
As shown in fig. 1, in embodiment 1 of the present invention, a substrate 1 is a conductive silicon carbide substrate, and a semiconductor conversion layer 2 of a PN junction type SiC epitaxial structure is prepared on the conductive silicon carbide substrate 1; the metal lower electrode 4 is a Ti/Au ohmic electrode and is formed on the lower surface of the conductive silicon carbide substrate 1 by using electron beam evaporation and thermal evaporation processes, and annealing operation is carried out to ensure that the metal lower electrode 4 is stably formed; then, transferring CVD graphene on a P-type silicon carbide layer, namely a P-type layer by using a wet method to form a graphene upper electrode 3; and finally, preparing a metal wiring point on the graphene upper electrode 3 by using a mask method, and completing the preparation of the graphene electrode SiC Beta radiation battery.
Fig. 2 is a schematic structural diagram of a PIN-type semiconductor radiation battery according to another embodiment of the present invention.
As shown in fig. 2, in embodiment 2 of the present invention, a substrate 1 is a sapphire substrate, and a PIN-type GaN epitaxial structure, i.e., a semiconductor conversion layer 2, is prepared on the sapphire substrate by using an MOCVD method; the metal lower electrode 4 is a Ti/Au ohmic electrode, is formed on the lower surface of the conductive silicon carbide substrate 1 by using electron beam evaporation and thermal evaporation processes, and is annealed to form the metal lower electrode 4 stably; then transferring the CVD graphene onto the P-type layer by using a wet transfer process to form a graphene upper electrode 3; etching the p layer and the i layer by using a semiconductor etching process to expose the connection part of the n-type layer electrode; preparing a mask pattern of an electrode area exposed out of the n-type layer by using an alignment process in ultraviolet lithography, and realizing an n-type layer electrode by using an electron beam evaporation process; and (3) realizing a mask pattern of a metal wiring area of the graphene upper electrode 3 by utilizing an alignment process in ultraviolet lithography, preparing a graphene metal wiring point, and finishing the preparation of the graphene electrode GaN Beta radiation battery.
The graphene semiconductor Beta radiation battery of the invention can also have various changes and modifications, and is not limited to the specific structure of the above embodiment. For example, fig. 3 is a schematic structural diagram of a schottky-type semiconductor radiation cell according to a third embodiment of the present invention. Wherein, the semiconductor conversion layer 2 is of a Schottky structure.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.
Claims (8)
1. The semiconductor radiation battery is characterized by comprising a semiconductor conversion layer (2) and a graphene upper electrode (3) which are sequentially formed above a substrate (1), and a metal lower electrode (4) formed below the substrate (1).
2. The semiconductor radiation cell according to claim 1, characterized in that the graphene upper electrode (3) has a thickness of 1-100 nm.
3. The semiconductor radiation cell according to claim 1, characterized in that the material of the semiconductor conversion layer (2) is selected from any one of SiC, GaN, ZnO, diamond.
4. The semiconductor radiation cell as claimed in claim 1, characterized in that the structure of the semiconductor conversion layer (2) is any one of a PN junction structure, a PIN junction structure or a schottky structure.
5. The semiconductor radiation cell according to claim 1, characterized in that the material of the metal bottom electrode (4) is selected from any one of Ti, Al, Au.
6. A semiconductor radiation cell according to claim 1, characterized in that the contact type of the metal bottom electrode (4) is an ohmic contact.
7. The semiconductor radiation battery as claimed in claim 1, characterized in that the method for preparing the graphene upper electrode (3) of the semiconductor radiation battery comprises the following steps:
s1: thermal decomposition of silicon carbide.
S2: and (3) a wet transfer CVD graphene method.
S3: and a method for spin coating, drip coating and spray coating of graphene solution.
8. The semiconductor radiation battery according to claim 1, characterized in that the preparation of the graphene electrode radiation battery is completed by preparing metal wiring points on the graphene upper electrode (3) by using a mask method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011416015.8A CN112489848A (en) | 2020-12-07 | 2020-12-07 | Semiconductor radiation battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011416015.8A CN112489848A (en) | 2020-12-07 | 2020-12-07 | Semiconductor radiation battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112489848A true CN112489848A (en) | 2021-03-12 |
Family
ID=74940445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011416015.8A Pending CN112489848A (en) | 2020-12-07 | 2020-12-07 | Semiconductor radiation battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112489848A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113284959A (en) * | 2021-05-11 | 2021-08-20 | 中国科学院长春光学精密机械与物理研究所 | Graphene optimized wide-bandgap semiconductor radiation detector |
| CN114203327A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | P-i-n junction, preparation method, diode and beta nuclear battery |
| CN114203329A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | GaN-based Schottky diode, beta nuclear battery and preparation method thereof |
Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203312306U (en) * | 2013-05-22 | 2013-11-27 | Kmt纳米科技（香港）有限公司 | Transparent solar cell |
| CN103606514A (en) * | 2013-12-03 | 2014-02-26 | 西安电子科技大学 | Chemical corrosion transfer method based on GaN substrate CVD epitaxial growth graphene |
| CN103904186A (en) * | 2014-03-28 | 2014-07-02 | 上海大学 | Semiconductor device based on graphene electrode and manufacturing method thereof |
| CN104409127A (en) * | 2014-11-14 | 2015-03-11 | 中国工程物理研究院核物理与化学研究所 | Composite converting type isotope battery |
| CN104810411A (en) * | 2014-01-24 | 2015-07-29 | 中国科学院上海微系统与信息技术研究所 | Photoconductive ultraviolet detector and manufacturing method thereof |
| CN104900497A (en) * | 2015-06-15 | 2015-09-09 | 北京工业大学 | Method for directly growing graphene on nonmetallic substrate |
| US20150279491A1 (en) * | 2014-03-31 | 2015-10-01 | Medtronic, Inc. | Nuclear radiation particle power converter |
| CN105024004A (en) * | 2015-06-12 | 2015-11-04 | 蔡鸿 | A high luminous efficiency chip of a vertical LED structure and with heat radiation characteristics and a manufacturing method thereof |
| CN105551949A (en) * | 2015-12-11 | 2016-05-04 | 中国电子科技集团公司第五十五研究所 | Method of adopting two-dimensional graphene thin film to improve conductivity of substrate during electron beam nano gate writing |
| CN105742394A (en) * | 2016-02-29 | 2016-07-06 | 北京邮电大学 | Black phosphorus/graphene heterostructure-based ultraviolet detector and production method thereof |
| US20160268128A1 (en) * | 2015-03-12 | 2016-09-15 | International Business Machines Corporation | Selective epitaxy using epitaxy-prevention layers |
| CN106298967A (en) * | 2015-06-02 | 2017-01-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Silicon carbide diode and preparation method thereof |
| CN107195724A (en) * | 2017-05-16 | 2017-09-22 | 江南大学 | A kind of method that application Graphene electrodes prepare AlGaN Schottky solar blind ultraviolet detectors on GaN self-supported substrates |
| JP2017199887A (en) * | 2016-04-29 | 2017-11-02 | キヤノン電子株式会社 | Organic photoelectric conversion device and solar battery |
| CN107945901A (en) * | 2017-12-13 | 2018-04-20 | 深圳贝塔能量技术有限公司 | A kind of quantum dot beta voltaic element |
| CN108281492A (en) * | 2018-02-01 | 2018-07-13 | 北京派克贸易有限责任公司 | A kind of composite substrate structure |
| CN108899374A (en) * | 2017-05-15 | 2018-11-27 | 中国科学院微电子研究所 | Silicon-based solar cell and preparation method thereof |
| CN109309131A (en) * | 2018-09-14 | 2019-02-05 | 中国科学院长春光学精密机械与物理研究所 | Graphene transparent electrode dual stage face carbonization silicon radiation detector and preparation method thereof |
| CN111755534A (en) * | 2020-06-10 | 2020-10-09 | 浙江大学 | Graphene/semiconductor built-in electric field regulated PN junction solar cell and preparation method thereof |
| CN111968772A (en) * | 2020-08-25 | 2020-11-20 | 中国科学院合肥物质科学研究院 | Heterojunction isotope battery based on graphene |
-
2020
- 2020-12-07 CN CN202011416015.8A patent/CN112489848A/en active Pending
Patent Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203312306U (en) * | 2013-05-22 | 2013-11-27 | Kmt纳米科技（香港）有限公司 | Transparent solar cell |
| CN103606514A (en) * | 2013-12-03 | 2014-02-26 | 西安电子科技大学 | Chemical corrosion transfer method based on GaN substrate CVD epitaxial growth graphene |
| CN104810411A (en) * | 2014-01-24 | 2015-07-29 | 中国科学院上海微系统与信息技术研究所 | Photoconductive ultraviolet detector and manufacturing method thereof |
| CN103904186A (en) * | 2014-03-28 | 2014-07-02 | 上海大学 | Semiconductor device based on graphene electrode and manufacturing method thereof |
| US20150279491A1 (en) * | 2014-03-31 | 2015-10-01 | Medtronic, Inc. | Nuclear radiation particle power converter |
| CN104409127A (en) * | 2014-11-14 | 2015-03-11 | 中国工程物理研究院核物理与化学研究所 | Composite converting type isotope battery |
| US20160268128A1 (en) * | 2015-03-12 | 2016-09-15 | International Business Machines Corporation | Selective epitaxy using epitaxy-prevention layers |
| CN106298967A (en) * | 2015-06-02 | 2017-01-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Silicon carbide diode and preparation method thereof |
| CN105024004A (en) * | 2015-06-12 | 2015-11-04 | 蔡鸿 | A high luminous efficiency chip of a vertical LED structure and with heat radiation characteristics and a manufacturing method thereof |
| CN104900497A (en) * | 2015-06-15 | 2015-09-09 | 北京工业大学 | Method for directly growing graphene on nonmetallic substrate |
| CN105551949A (en) * | 2015-12-11 | 2016-05-04 | 中国电子科技集团公司第五十五研究所 | Method of adopting two-dimensional graphene thin film to improve conductivity of substrate during electron beam nano gate writing |
| CN105742394A (en) * | 2016-02-29 | 2016-07-06 | 北京邮电大学 | Black phosphorus/graphene heterostructure-based ultraviolet detector and production method thereof |
| JP2017199887A (en) * | 2016-04-29 | 2017-11-02 | キヤノン電子株式会社 | Organic photoelectric conversion device and solar battery |
| CN108899374A (en) * | 2017-05-15 | 2018-11-27 | 中国科学院微电子研究所 | Silicon-based solar cell and preparation method thereof |
| CN107195724A (en) * | 2017-05-16 | 2017-09-22 | 江南大学 | A kind of method that application Graphene electrodes prepare AlGaN Schottky solar blind ultraviolet detectors on GaN self-supported substrates |
| CN107945901A (en) * | 2017-12-13 | 2018-04-20 | 深圳贝塔能量技术有限公司 | A kind of quantum dot beta voltaic element |
| CN108281492A (en) * | 2018-02-01 | 2018-07-13 | 北京派克贸易有限责任公司 | A kind of composite substrate structure |
| CN109309131A (en) * | 2018-09-14 | 2019-02-05 | 中国科学院长春光学精密机械与物理研究所 | Graphene transparent electrode dual stage face carbonization silicon radiation detector and preparation method thereof |
| CN111755534A (en) * | 2020-06-10 | 2020-10-09 | 浙江大学 | Graphene/semiconductor built-in electric field regulated PN junction solar cell and preparation method thereof |
| CN111968772A (en) * | 2020-08-25 | 2020-11-20 | 中国科学院合肥物质科学研究院 | Heterojunction isotope battery based on graphene |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113284959A (en) * | 2021-05-11 | 2021-08-20 | 中国科学院长春光学精密机械与物理研究所 | Graphene optimized wide-bandgap semiconductor radiation detector |
| CN114203327A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | P-i-n junction, preparation method, diode and beta nuclear battery |
| CN114203329A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | GaN-based Schottky diode, beta nuclear battery and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11349039B2 (en) | Axially-integrated epitaxially-grown tandem wire arrays | |
| US20150303319A1 (en) | Back contact solar cell and manufacturing method thereof | |
| KR100847741B1 (en) | Point-contacted heterojunction silicon solar cell having passivation layer between the interface of p-n junction and method for fabricating the same | |
| CN112489848A (en) | Semiconductor radiation battery | |
| JP2010533985A (en) | Ordered structure of semiconductor | |
| US20130174896A1 (en) | Tandem solar cell using a silicon microwire array and amorphous silicon photovoltaic layer | |
| US11245046B2 (en) | Multi-junction tandem laser photovoltaic cell and manufacturing method thereof | |
| CN106684177A (en) | P-GaN/i-GaN/n-BN neutron detector | |
| KR100953448B1 (en) | Photoelectric conversion device using semiconductor nano material and method for manufacturing thereof | |
| US20140000689A1 (en) | Nitride semiconductor-based solar cell and manufacturing method thereof | |
| Zhang et al. | Fabrication of two types of ordered InP nanowire arrays on a single anodic aluminum oxide template and its application in solar cells | |
| WO2023098038A1 (en) | Method for preparing columnar electrode structure of perovskite solar cell | |
| KR101393092B1 (en) | Ⅲ-ⅴ group compound solar cell and method for preparing the same | |
| US10243096B2 (en) | Crack-tolerant photovoltaic cell structure and fabrication method | |
| CN110224033B (en) | Iron oxide photo-anode system embedded with silicon pn junction and preparation method | |
| US20210391486A1 (en) | Systems and Methods for Non-Epitaxial High Schottky-Barrier Heterojunction Solar Cells | |
| CN211264978U (en) | Gallium nitride based nuclear battery with multiple junctions | |
| CN110491541B (en) | H-3 silicon carbide isotope battery and manufacturing method thereof | |
| CN110459340B (en) | H-3 silicon carbide PN type isotope battery and manufacturing method thereof | |
| CN110556192B (en) | Pm-147 silicon carbide slow-change PN type isotope battery and manufacturing method thereof | |
| CN113284959A (en) | Graphene optimized wide-bandgap semiconductor radiation detector | |
| KR101464086B1 (en) | Solar cell structure using multiple junction compound | |
| CN108962418B (en) | Pm-147 silicon carbide slow-change Schottky isotope battery and manufacturing method thereof | |
| CN110556193B (en) | Pm-147 silicon carbide graded N region isotope battery and manufacturing method thereof | |
| CN111599881B (en) | Single crystal cuprous oxide composite semiconductor nano generator and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |