CN112485640A - Detection method and device for built-in capacitor, detection equipment and storage medium - Google Patents
Detection method and device for built-in capacitor, detection equipment and storage medium Download PDFInfo
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- CN112485640A CN112485640A CN202011294573.1A CN202011294573A CN112485640A CN 112485640 A CN112485640 A CN 112485640A CN 202011294573 A CN202011294573 A CN 202011294573A CN 112485640 A CN112485640 A CN 112485640A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/10—Measuring sum, difference or ratio
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/30—Measuring the maximum or the minimum value of current or voltage reached in a time interval
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2605—Measuring capacitance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
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Abstract
The embodiment of the invention discloses a detection method, a detection device, detection equipment and a storage medium for a built-in capacitor. The method comprises the following steps: acquiring the charging current value of each channel to be detected, wherein a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected; respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value, and acquiring a detection voltage value of each built-in capacitor; and determining whether each built-in capacitor of the chip to be detected is correctly installed or not according to each charging current value and each detection voltage value, and generating a detection result. By adopting the technical scheme, the detection time of the built-in capacitor of the chip to be detected can be shortened, the detection efficiency of the built-in capacitor is improved, and the detection of the built-in capacitor in the mass production stage of the chip to be detected is realized.
Description
Technical Field
The invention relates to the technical field of detection, in particular to a detection method, a detection device, detection equipment and a storage medium for a built-in capacitor.
Background
At present, most of the external pins of the chip are connected by capacitors inside the chip to realize the filtering performance of the chip pins.
In order to ensure that the chip is not missed or mistakenly pasted with the capacitor in the production process, the built-in capacitor corresponding to the chip pin needs to be detected according to a chip design drawing. The existing capacitor testing technology mostly adopts an oscillating circuit, and the capacitance is obtained by measuring the resonant frequency, so that whether the built-in capacitor of the chip is correctly pasted or not is judged.
However, in this detection method, a single detection of the built-in capacitor of the chip takes a long time, and the cost is high, so that the detection of the built-in capacitor in the stage of mass production of the chip cannot be realized.
Disclosure of Invention
In view of this, embodiments of the present invention provide a method, an apparatus, a device and a storage medium for detecting a built-in capacitor, so as to achieve built-in capacitor detection in a stage of mass production of chips.
In a first aspect, an embodiment of the present invention provides a method for detecting a built-in capacitor, including:
acquiring the charging current value of each channel to be detected, wherein a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected;
respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value, and acquiring a detection voltage value of each built-in capacitor;
and determining whether each built-in capacitor of the chip to be detected is correctly installed or not according to each charging current value and each detection voltage value, and generating a detection result.
In a second aspect, an embodiment of the present invention provides a detection apparatus for a built-in capacitor, including:
the current acquisition module is used for acquiring the charging current value of each channel to be detected, wherein the built-in capacitor of the chip to be detected is connected with at least one channel to be detected through the pin of the chip to be detected;
the voltage detection module is used for respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value and acquiring a detection voltage value of each built-in capacitor;
and the result generation module is used for determining whether each built-in capacitor of the chip to be detected is correctly installed or not according to each charging current value and each detection voltage value, and generating a detection result.
In a third aspect, an embodiment of the present invention provides a detection apparatus, including:
one or more processors;
a memory for storing one or more programs,
when the one or more programs are executed by the one or more processors, the one or more processors implement the method for detecting the built-in capacitor according to the embodiment of the present invention.
In a fourth aspect, the embodiment of the present invention further provides a computer-readable storage medium, on which a computer program is stored, and the computer program, when executed by a processor, implements the method for detecting the built-in capacitor according to the embodiment of the present invention.
In the technical scheme for detecting the built-in capacitors, the charging current value of a channel to be detected, which is connected with each built-in capacitor of the chip to be detected through a pin of the chip to be detected, is obtained, the charging current value of each channel to be detected is respectively adopted to charge the built-in capacitor connected with the corresponding channel to be detected, the detection voltage value of each built-in capacitor is obtained, and whether each built-in capacitor of the chip to be detected is correctly installed or not is determined according to the charging current value and the charging voltage value of each built-in capacitor, so that the detection result is generated. By adopting the technical scheme, the capacitance value of the built-in capacitor can be detected without using an oscillating circuit, the parallel detection of the built-in capacitors of the chip to be detected can be realized, the time consumed by the detection of the built-in capacitors of the chip to be detected can be shortened, the detection efficiency of the built-in capacitors is improved, and the detection of the built-in capacitors in the mass production stage of the chip to be detected is realized.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments made with reference to the following drawings:
fig. 1 is a schematic flowchart of a method for detecting a built-in capacitor according to an embodiment of the present invention;
fig. 2 is a schematic flowchart of a detection method for a built-in capacitor according to a second embodiment of the present invention;
fig. 3 is a block diagram of a detecting apparatus with a built-in capacitor according to a third embodiment of the present invention;
fig. 4 is a schematic structural diagram of a detection apparatus according to a fourth embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some but not all of the relevant aspects of the present invention are shown in the drawings. In addition, the embodiments and features of the embodiments in the present invention may be combined with each other without conflict.
Example one
The embodiment of the invention provides a detection method of a built-in capacitor. The method can be executed by a detection device of the built-in capacitor, wherein the device can be realized by software and/or hardware, can be integrated in detection equipment and is suitable for a scene of detecting the built-in capacitor of the chip. Fig. 1 is a schematic flowchart of a detection method for a built-in capacitor according to an embodiment of the present invention. As shown in fig. 1, the method for detecting a built-in capacitor provided in this embodiment may include:
s110, obtaining the charging current value of each channel to be detected, wherein the built-in capacitor of the chip to be detected is connected with at least one channel to be detected through the pin of the chip to be detected.
Here, the charging current value may be understood as a current value of a current that each test channel needs to input to the internal capacitor connected thereto when detecting the internal capacitor. The chip to be detected can be understood as a chip which needs to detect the built-in capacitor, such as a chip obtained by mass production. The channel to be detected can be a detection channel which needs to be opened in the detection, different channels to be detected are connected with different pins of the chip to be detected, the pins connected with the channels to be detected can be the same pins of the chip to be detected and can also be the pins of different chips to be detected, namely, the detection equipment can detect the built-in capacitor of only one chip to be detected at a time and can also detect the built-in capacitors of different chips to be detected, and the detection equipment can specifically and specifically depend on the actual detection requirement and the number of the built-in capacitors which need to be detected by the chip to be detected, for example, when the number of the chips to be detected is large and the number of the built-in capacitors which need to be detected by each chip to be detected is small (for example, the number is; when the number of the chips to be detected is small or the number of the built-in capacitors to be detected of each chip to be detected is large (for example, more than 300), only one chip to be detected can be detected at a time.
In this embodiment, the detection device may be provided with a plurality of detection channels, for example, the number of the detection channels may be greater than 100 or 200, and for example, the detection device may be provided with 360 detection channels; correspondingly, when each built-in capacitor in the chip to be detected is detected, a pin connected with each built-in capacitor can be connected with one or two detection channels of the detection equipment, for example, when one end of the built-in capacitor is grounded, a pin connected with the other end of the built-in capacitor can be connected with one detection channel of the detection equipment; when both ends of the built-in capacitor are not grounded, the pin connected to one end of the built-in capacitor may be connected to one detection channel of the detection device, and the pin connected to the other end of the built-in capacitor may be connected to the other detection channel of the detection device. The following description will be given taking as an example that one end of the built-in capacitor is already grounded.
In an embodiment, the charging current value of each channel to be detected may be set by a detector, for example, after each built-in capacitor to be detected of a chip to be detected is connected to different detection channels of the detection device through a pin connected to the built-in capacitor, the detector may set the charging current value of the channel to be detected that needs to be turned on (i.e., needs to be charged at this time) and the charging current value of each channel to be detected through the upper computer, that is, the detector may input the charging current value of each detection channel through the upper computer, and the upper computer obtains the detection current value input by the detector and writes the detection current value into the memory configured to the detection device. The memory of the detection device may be any type of memory, preferably a Double Data Rate (Double Data Rate) synchronous dynamic random access memory, and the memory may be physically connected to a processor of the detection device, and the processor of the detection device may be a Field Programmable Gate Array (FPGA).
In another embodiment, the charging current value of each channel to be detected can be calculated by the detection device. At this time, preferably, the obtaining of the charging current value of each channel to be detected includes: acquiring capacitor parameters of a built-in capacitor connected with each channel to be detected, wherein the capacitor parameters comprise a theoretical capacitance value, a charging current threshold value and a detection voltage threshold value; and determining the charging current value of each channel to be detected according to preset detection time and the capacitor parameters.
The capacitor parameters may include a theoretical capacitance value, a charging current threshold value and a detection voltage value of the built-in capacitor, the theoretical capacitance value may be understood as a theoretical value of a capacitance of the built-in capacitor, the charging current threshold value may be understood as a current threshold value when the built-in capacitor normally works, the charging current threshold value may include a maximum current threshold value and a minimum current threshold value, the detection voltage threshold value may be understood as a voltage value to which the capacitor at least needs to be raised in the current detection process, and the capacitor parameters of each built-in capacitor may be input into the upper computer by a detection person. The detection time range may be understood as the detection time for the detection, and may be a preset time value or a preset time range, and the following description will take the detection time as the preset time value as an example.
In the above embodiment, the detection personnel can set the current detection time, and correspondingly, the detection device can control the voltage value of each built-in capacitor to rise to a proper voltage value within the detection time so as to perform detection, so that when the detection time is reached, the detection of each built-in capacitor is completed, the detection of each built-in capacitor can be completed synchronously as much as possible during the same detection, and the waiting time of the detection personnel is reduced.
Exemplary embodiments of the inventionBefore detecting the chips to be detected which are produced in batch at this time, a detector can set the channels to be detected which need to be opened at this time and the connection relation between each channel to be detected and each built-in capacitor of the chips to be detected, and input the capacitor parameters and the detection time of each built-in capacitor of the chips to be detected into an upper computer; correspondingly, the upper computer can write the identification information of the channel to be detected, which is required to be opened at this time and is input by a detection person, the capacitor parameters of the built-in capacitor connected with each channel to be detected and the detection time into the detection equipment; therefore, the detection equipment can determine the channel to be detected to be opened according to the identification information written in by the upper computer, and determine the charging current value of the detection channel according to the detection time written in by the upper computer and the capacitor parameter of the built-in capacitor connected with each channel to be detected, for example, the charging current value can be based on the formula i0＝C0×u0/t0Calculating to obtain the charging current value of each channel to be detected, wherein i0The value of the charging current for the channel to be detected, C0Theoretical capacitance value u of a built-in capacitor connected to a channel to be detected0For the value of the voltage, t, detected by the built-in capacitor connected to the channel to be detected0Is the detection time.
When the host computer writes the identification information of the channel to be detected which needs to be opened at this time and is input by a detection person into the detection device, for example, a channel register which is used for recording the detection channel which needs to be opened and the detection channel which does not need to be opened can be arranged in the detection device, each bit in the channel register corresponds to one detection channel, bit 1 indicates that the corresponding detection channel needs to be opened when being detected, bit 0 indicates that the corresponding detection channel does not need to be opened when being detected, therefore, the host computer can set the bit corresponding to the channel to be detected which needs to be opened at this time in the channel register as 1, and set the bit corresponding to the channel to be detected which needs to be opened at this time in the channel register as 0.
It can be understood that, because the detection time is usually set by the detection person in consideration of the charging current threshold of the internal capacitor, that is, the detection time set by the detection person generally does not cause the actual charging current of the internal capacitor to be outside the charging current range during normal operation of the internal capacitor, in this embodiment, when determining the charging current value of each channel to be detected, the charging current threshold of each internal capacitor may also be not considered, and the charging current value of each detection channel is determined only according to the preset detection time and the theoretical capacitance value of the internal capacitor, at this time, the capacitor parameters may only include the theoretical capacitance value and the detection voltage threshold.
And S120, respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting the corresponding charging current value, and acquiring the detection voltage value of each built-in capacitor.
Here, the detected voltage value of the built-in capacitor may be understood as a voltage value of the built-in capacitor detected during the charging process.
In this embodiment, the detection device may detect the detection capacitance of the internal capacitor connected to each channel to be detected in parallel, for example, control the charging device arranged in each channel to be detected and used for charging the internal capacitor to charge the internal capacitor connected to the channel to be detected with the charging current value of the channel to be detected, and control the detection device arranged in each channel to be detected to detect the detection voltage value of the channel to be detected.
In an embodiment, the charging device disposed in the channel to be detected may be a Parametric Measurement Unit (PMU), and the detecting device disposed in the channel to be detected may be an analog to Digital Conversion (ADC) chip, and accordingly, the controlling the channels to be detected to charge the connected internal capacitors with corresponding charging current values and obtain the detection voltage values of the internal capacitors includes: for each channel to be detected, controlling a parameter measuring unit in the channel to be detected to charge a built-in capacitor connected with the channel to be detected by adopting target current, and periodically detecting a detection voltage value of the built-in capacitor through an analog-to-digital conversion chip in the channel to be detected; and the current value of the target current is the charging current value of the built-in capacitor connected with the channel to be detected.
In the above embodiment, each detection channel of the detection device may be provided with a parameter measurement unit and an analog-to-digital conversion chip, and the parameter measurement unit in a certain channel to be detected may be connected to the analog-to-digital conversion chip in the channel to be detected, the pin of the chip to be detected, and the processor of the detection device, respectively; the analog-to-digital conversion chip in a certain channel to be detected can be respectively connected with the pin of the chip to be detected and the processor of the detection equipment.
For example, the processor of the detection device may simultaneously send a charging instruction for controlling the parameter measuring unit to charge the built-in capacitor connected to the channel to be detected according to the charging current value of the corresponding channel to be detected to the parameter measuring unit in each channel to be detected; correspondingly, after receiving the charging instruction sent by the processor, the parameter measuring unit in each channel to be detected can charge the built-in capacitor connected with the channel to be detected according to the charging current value corresponding to the charging instruction.
In this embodiment, each channel to be detected may continuously charge the internal capacitor connected thereto until the internal capacitor has reached the maximum amount of electricity that it can accommodate or receives a stop charging instruction sent by the processor; or when the charging time reaches a preset timeout time, that is, the charging of the internal capacitor connected to the charging time is stopped, in this case, preferably, the method for detecting the internal capacitor provided in this embodiment may further include: and when the charging time of each built-in capacitor reaches the preset overtime time, controlling each channel to be detected to stop charging the connected built-in capacitor. The timeout time may be set by a detection person or calculated by the detection device according to the detection time set by the detection person, for example, the timeout time is set to a set multiple (e.g., 3 times) of the detection time; the detection device may send a charging stop instruction to a certain channel to be detected when the magnitude or number of the detection voltage value detected by the channel to be detected can already determine whether the internal capacitor connected to the channel to be detected is correctly installed, or send a charging stop instruction to each channel to be detected when the magnitude or number of the detection voltage value detected by all the channels to be detected can already determine whether the internal capacitor connected to the corresponding detection channel is correctly installed, which is not limited in this embodiment.
And S130, determining whether each built-in capacitor of the chip to be detected is correctly installed or not according to each charging current value and each detection voltage value, and generating a detection result.
In this embodiment, the method for determining whether each built-in capacitor is correctly installed may be selected as needed, for example, by determining whether a difference between a first voltage value actually reached by a voltage value of a certain built-in capacitor within a certain time period and a second voltage value that should be reached within the time period is within a certain voltage range, if yes, it is determined that the built-in capacitor is correctly installed, and if not, it is determined that the built-in capacitor is not correctly installed; or the capacitance value of the built-in capacitor can be calculated according to the charging current value and the detection voltage value of the built-in capacitor, if the capacitance value is within a certain error range with the theoretical capacitance value, the built-in capacitor is determined to be correctly installed, and if not, the built-in capacitor is determined to be incorrectly installed.
The method for detecting the built-in capacitors provided in the embodiment of the present invention obtains the charging current value of the to-be-detected channel connected to each built-in capacitor of the to-be-detected chip through the pin of the to-be-detected chip, charges the built-in capacitor connected to the corresponding to-be-detected channel by using the charging current value of each to-be-detected channel, obtains the detection voltage value of each built-in capacitor, and determines whether each built-in capacitor of the to-be-detected chip is correctly installed according to the charging current value and the charging voltage value of each built-in capacitor, thereby generating a detection result. By adopting the technical scheme, the capacitance value of the built-in capacitor can be detected without using an oscillating circuit, the parallel detection of the built-in capacitors of the chip to be detected can be realized, the time consumed by the detection of the built-in capacitors of the chip to be detected can be shortened, the detection efficiency of the built-in capacitors is improved, and the detection of the built-in capacitors in the mass production stage of the chip to be detected is realized.
Example two
Fig. 2 is a schematic flow chart of a detection method for a built-in capacitor according to this embodiment. On the basis of the above embodiment, the present embodiment optimizes "determining whether each built-in capacitor of the chip to be detected is correctly mounted according to each charging current value and each detection voltage value" as follows: calculating the detection capacitance value of each built-in capacitor according to the charging current value and the detection voltage value of each built-in capacitor; and sending the detection capacitance values of the built-in capacitors to an upper computer so as to determine whether the built-in capacitors of the chip to be detected are correctly installed or not according to the detection capacitance values by the upper computer.
Further, before the step of respectively controlling each channel to be detected to charge the connected built-in capacitor with the corresponding charging current value, the method further comprises the following steps: and respectively controlling each channel to be detected to apply 0V voltage to the connected built-in capacitor so as to release residual charges in each built-in capacitor.
Correspondingly, as shown in fig. 2, the method for detecting a built-in capacitor provided in this embodiment may include:
s210, obtaining the charging current value of each channel to be detected, wherein the built-in capacitor of the chip to be detected is connected with at least one channel to be detected through the pin of the chip to be detected.
And S220, respectively controlling each channel to be detected to apply 0V voltage to the connected built-in capacitor so as to release residual charges in each built-in capacitor.
In this embodiment, since there may be residual charges in the built-in capacitor of the chip to be detected, after each channel to be detected is enabled, the parameter measuring unit in each channel to be detected may be first controlled to output 0V voltage to the built-in capacitor connected to the channel to be detected, so as to control each built-in capacitor to discharge, thereby preventing the residual charges in the built-in capacitor from affecting the detection of the built-in capacitor. The residual charge may be connected to the charge remaining in the built-in capacitor.
S230, controlling a parameter measuring unit in each channel to be detected to charge a built-in capacitor connected with the channel to be detected by adopting target current, and periodically detecting the detection voltage value of the built-in capacitor through an analog-to-digital conversion chip in the channel to be detected; and the current value of the target current is the charging current value of the built-in capacitor connected with the channel to be detected.
And S240, calculating the detection capacitance value of each built-in capacitor according to the charging current value and the detection voltage value of each built-in capacitor.
The capacitance value can be understood as the capacitance value of the built-in capacitor detected by the detection device.
Specifically, the detected voltage value change amount of each internal capacitor per unit time may be calculated from the monitored voltage values of each internal capacitor in at least two detection cycles, and the detected capacitance value of each internal capacitor may be calculated from the charging current of each internal capacitor and the detected voltage value change amount of each internal capacitor per unit time.
In order to further improve the accuracy of the calculated detected capacitance values of the internal capacitors and further improve the accuracy of the finally generated detection results, it is preferable that the calculating of the detected capacitance values of the internal capacitors from the charging current values and the detection voltage values of the internal capacitors includes: for each built-in capacitor, determining the voltage rise time of the built-in capacitor from a preset minimum voltage value to a preset maximum voltage value according to the detection voltage value of the built-in capacitance value in each detection period; and calculating the detection capacitance value of the built-in capacitor according to the charging current value, the voltage rise time and the voltage difference value between the preset maximum voltage value and the preset minimum voltage value. The preset minimum voltage value and the preset maximum voltage value can be two voltage values in a time period in which the capacitor is charged stably, and can be preset by a detection person.
For example, after controlling each channel to be detected to charge the connected built-in capacitors, the detection device may periodically detect a detection voltage value of each built-in capacitor, determine whether the detection voltage value reaches a preset minimum voltage value, start timing when the detection voltage value reaches the preset minimum voltage value, continue to determine whether the detection voltage value of the built-in capacitor reaches a preset maximum voltage value, and stop timing when the detection voltage value reaches the preset maximum voltage value to obtain a voltage rise time of the built-in capacitor; and then calculating the ratio of the difference between the preset maximum voltage value and the preset minimum voltage value to the voltage rise time, and further calculating the product of the ratio and the charging current value of the built-in capacitor, so as to obtain the detection capacitance value of the built-in capacitor.
And S250, sending the detection capacitance values of the built-in capacitors to an upper computer, and determining whether the built-in capacitors of the chip to be detected are correctly installed or not according to the detection capacitance values through the upper computer to generate a detection result.
For example, after the detection device detects the detected capacitance value of each built-in capacitor, the detection device may store the detected capacitance value of each built-in capacitor in a memory and notify the upper computer that the detection is completed, for example, setting a detection register inside the detection device from 0 to 1 to represent that the detected capacitance value of each built-in capacitor has been completed; when monitoring that the detection register is set to be 1, the upper computer can determine that the detection of the detection capacitance value of each built-in capacitor is completed, reads the detection capacitance value of each built-in capacitor from a memory of the detection device, and further judges whether the difference value between the detection capacitance value of each built-in capacitor and the theoretical capacitance value of each built-in capacitor is within a preset capacitance range, if so, the correct installation of the built-in capacitor can be judged; if not, the built-in capacitor is judged not to be installed correctly, and the detection result of the chip to be detected is further determined to be unqualified.
The method for detecting the built-in capacitors provided by the second embodiment of the invention obtains the charging current values of the channels to be detected, firstly controls the channels to be detected to apply 0V voltage to the connected built-in capacitors, then controls the channels to be detected to charge the connected built-in capacitors by adopting the corresponding charging current values, detects the detection voltage values of the built-in capacitors, further calculates the detection capacitors of the built-in capacitors according to the charging current values and the detection voltage values, and sends the detection capacitors of the built-in capacitors to the upper computer, so that the upper computer judges whether the built-in capacitors are correctly installed according to the detection capacitance values of the built-in capacitors, and generates detection results. By adopting the technical scheme, the accuracy of the detection capacitance value of the built-in capacitor obtained by detection can be further improved, and the accuracy of the detection result of the chip to be detected is further improved.
EXAMPLE III
The third embodiment of the invention provides a detection device for a built-in capacitor. The device can be realized by software and/or hardware, can be integrated in a detection device, and can detect the built-in capacitor by executing the detection method of the built-in capacitor. Fig. 3 is a block diagram of a detecting device with a built-in capacitor according to a third embodiment of the present invention. As shown in fig. 3, the apparatus includes: a current acquisition module 301, a voltage detection module 302, and a result generation module 303, wherein,
the current obtaining module 301 is configured to obtain a charging current value of each channel to be detected, where a built-in capacitor of a chip to be detected is connected to at least one channel to be detected through a pin of the chip to be detected;
the voltage detection module 302 is configured to respectively control each channel to be detected to charge the connected built-in capacitor with a corresponding charging current value, and obtain a detection voltage value of each built-in capacitor;
and a result generating module 303, configured to determine whether each built-in capacitor of the chip to be detected is correctly mounted according to each charging current value and each detection voltage value, and generate a detection result.
In the detection apparatus for the built-in capacitors provided by the third embodiment of the present invention, the current obtaining module 301 obtains the charging current value of the to-be-detected channel connected to each built-in capacitor of the to-be-detected chip through the pin of the to-be-detected chip, the voltage detecting module 302 charges the built-in capacitor connected to the corresponding to-be-detected channel by using the charging current value of each to-be-detected channel, and obtains the detection voltage value of each built-in capacitor, and the result generating module 303 determines whether each built-in capacitor of the to-be-detected chip is correctly installed according to the charging current value and the charging voltage value of each built-in capacitor, so. By adopting the technical scheme, the capacitance value of the built-in capacitor can be detected without using an oscillating circuit, the parallel detection of the built-in capacitors of the chip to be detected can be realized, the time consumed by the detection of the built-in capacitors of the chip to be detected can be shortened, the detection efficiency of the built-in capacitors is improved, and the detection of the built-in capacitors in the mass production stage of the chip to be detected is realized.
In the foregoing solution, the voltage detection module 302 may specifically be configured to: for each channel to be detected, controlling a parameter measuring unit in the channel to be detected to charge a built-in capacitor connected with the channel to be detected by adopting target current, and periodically detecting a detection voltage value of the built-in capacitor through an analog-to-digital conversion chip in the channel to be detected; and the current value of the target current is the charging current value of the built-in capacitor connected with the channel to be detected.
In the foregoing solution, the result generating module 303 may include: a capacitance calculation unit for calculating a detection capacitance value of each built-in capacitor from a charging current value and a detection voltage value of each built-in capacitor; and the result generation unit is used for sending the detection capacitance values of the built-in capacitors to an upper computer so as to determine whether the built-in capacitors of the chip to be detected are correctly installed or not according to the detection capacitance values through the upper computer and generate a detection result.
In the above aspect, the capacitance calculating unit may include: the time detection subunit is used for determining the voltage rising time of the built-in capacitor from a preset minimum voltage value to a preset maximum voltage value according to the detection voltage value of the built-in capacitor in each detection period; and the capacitance calculating subunit is used for calculating the detection capacitance value of the built-in capacitor according to the charging current value, the voltage rise time and the voltage difference value between the preset maximum voltage value and the preset minimum voltage value.
Further, the detection apparatus for a built-in capacitor provided in this embodiment may further include: and the charging stopping module is used for controlling each channel to be detected to stop charging the connected built-in capacitors when the charging time of each built-in capacitor reaches the preset overtime.
Further, the detection apparatus for a built-in capacitor provided in this embodiment may further include: and the charge releasing module is used for respectively controlling each channel to be detected to apply 0V voltage to the connected built-in capacitor before the channel to be detected is respectively controlled to charge the connected built-in capacitor with the corresponding charging current value so as to release residual charges in the built-in capacitors.
In the foregoing aspect, the current obtaining module may include: the device comprises a parameter acquisition unit, a parameter detection unit and a parameter detection unit, wherein the parameter acquisition unit is used for acquiring capacitor parameters of a built-in capacitor connected with each channel to be detected, and the capacitor parameters comprise a theoretical capacitance value, a charging current threshold value and a detection voltage threshold value; and the current determining unit is used for determining the charging current value of each channel to be detected according to preset detection time and the capacitor parameter.
The detection device for the built-in capacitor provided by the third embodiment of the invention can execute the detection method for the built-in capacitor provided by any embodiment of the invention, and has the corresponding functional modules and beneficial effects of the execution of the detection method for the built-in capacitor. For details of the technology not described in detail in this embodiment, reference may be made to a method for detecting a built-in capacitor provided in any embodiment of the present invention.
Example four
Fig. 4 is a schematic structural diagram of a detecting apparatus according to a fourth embodiment of the present invention, as shown in fig. 4, the detecting apparatus includes a processor 40 and a memory 41, and may further include a plurality of detecting channels 42; the number of the processors 40 in the detection device may be one or more, and one processor 40 is taken as an example in fig. 4; the processor 40, memory 41 and the various detection channels in the detection device may be connected by a bus or other means.
The memory 41, as a computer-readable storage medium, may be used to store software programs, computer-executable programs, and modules, such as program instructions/modules corresponding to the detection method of the built-in capacitor in the embodiment of the present invention (for example, the current acquisition module 301, the voltage detection module 302, and the result generation module 303 in the detection apparatus of the built-in capacitor). The processor 40 executes various functional applications and data processing of the detection apparatus by executing software programs, instructions and modules stored in the memory 41, that is, implements the detection method of the built-in capacitor described above.
The memory 41 may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required for at least one function; the storage data area may store data created according to the use of the terminal, and the like. Further, the memory 41 may include high speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other non-volatile solid state storage device. In some examples, memory 41 may further include memory located remotely from processor 40, which may be connected to the detection device via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
The detection channel 42 may include a parameter measuring unit 421 and an analog-to-digital conversion chip 422, the parameter measuring unit 421 may be configured to charge the built-in capacitor, and the analog-to-digital conversion chip 422 may be configured to detect a detected capacitance value of the built-in capacitor and convert the detected capacitance value from an analog signal to a digital signal. A fourth embodiment of the present invention further provides a storage medium containing computer-executable instructions, which when executed by a computer processor, perform a method for detecting a built-in capacitor, the method including:
acquiring the charging current value of each channel to be detected, wherein a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected;
respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value, and acquiring a detection voltage value of each built-in capacitor;
and determining whether each built-in capacitor of the chip to be detected is correctly installed or not according to each charging current value and each detection voltage value, and generating a detection result.
Of course, the storage medium provided by the embodiment of the present invention contains computer-executable instructions, and the computer-executable instructions are not limited to the method operations described above, and may also perform related operations in the detection method of the built-in capacitor provided by any embodiment of the present invention.
From the above description of the embodiments, it is obvious for those skilled in the art that the present invention can be implemented by software and necessary general hardware, and certainly, can also be implemented by hardware, but the former is a better embodiment in many cases. Based on such understanding, the technical solutions of the present invention may be embodied in the form of a software product, which can be stored in a computer-readable storage medium, such as a floppy disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a FLASH Memory (FLASH), a hard disk or an optical disk of a computer, and includes several instructions for enabling a computer device (which may be a personal computer, a server, or a network device) to execute the methods according to the embodiments of the present invention.
It should be noted that, in the embodiment of the detection apparatus with a built-in capacitor, the included units and modules are merely divided according to functional logic, but are not limited to the above division, as long as the corresponding functions can be realized; in addition, specific names of the functional units are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present invention.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method for detecting a built-in capacitor is characterized in that,
acquiring the charging current value of each channel to be detected, wherein a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected;
respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value, and acquiring a detection voltage value of each built-in capacitor;
and determining whether each built-in capacitor of the chip to be detected is correctly installed or not according to each charging current value and each detection voltage value, and generating a detection result.
2. The method according to claim 1, wherein the separately controlling each channel to be detected to charge the connected built-in capacitor with a corresponding charging current value and obtaining a detection voltage value of each built-in capacitor comprises:
for each channel to be detected, controlling a parameter measuring unit in the channel to be detected to charge a built-in capacitor connected with the channel to be detected by adopting target current, and periodically detecting a detection voltage value of the built-in capacitor through an analog-to-digital conversion chip in the channel to be detected; and the current value of the target current is the charging current value of the built-in capacitor connected with the channel to be detected.
3. The method according to claim 2, wherein the determining whether each built-in capacitor of the chip to be detected is correctly mounted according to each charging current value and each detection voltage value comprises:
calculating the detection capacitance value of each built-in capacitor according to the charging current value and the detection voltage value of each built-in capacitor;
and sending the detection capacitance values of the built-in capacitors to an upper computer so as to determine whether the built-in capacitors of the chip to be detected are correctly installed or not according to the detection capacitance values by the upper computer.
4. The method according to claim 3, wherein calculating the detected capacitance value of each built-in capacitor from the charging current value and the detected voltage value of each built-in capacitor comprises:
for each built-in capacitor, determining the voltage rising time of the built-in capacitor from a preset minimum voltage value to a preset maximum voltage value according to the detection voltage value of the built-in capacitor in each detection period;
and calculating the detection capacitance value of the built-in capacitor according to the charging current value, the voltage rise time and the voltage difference value between the preset maximum voltage value and the preset minimum voltage value.
5. The method of any of claims 1-4, further comprising:
and when the charging time of each built-in capacitor reaches the preset overtime time, controlling each channel to be detected to stop charging the connected built-in capacitor.
6. The method according to any one of claims 1 to 4, wherein before the step of respectively controlling each channel to be detected to charge the connected built-in capacitor with the corresponding charging current value, the method further comprises the following steps:
and respectively controlling each channel to be detected to apply 0V voltage to the connected built-in capacitor so as to release residual charges in each built-in capacitor.
7. The method according to any one of claims 1 to 4, wherein the obtaining of the charging current value of each channel to be detected comprises:
acquiring capacitor parameters of a built-in capacitor connected with each channel to be detected, wherein the capacitor parameters comprise a theoretical capacitance value, a charging current threshold value and a detection voltage threshold value;
and determining the charging current value of each channel to be detected according to preset detection time and the capacitor parameters.
8. A detection device with a built-in capacitor is characterized in that,
the current acquisition module is used for acquiring the charging current value of each channel to be detected, wherein the built-in capacitor of the chip to be detected is connected with at least one channel to be detected through the pin of the chip to be detected;
the voltage detection module is used for respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value and acquiring a detection voltage value of each built-in capacitor;
and the result generation module is used for determining whether each built-in capacitor of the chip to be detected is correctly installed or not according to each charging current value and each detection voltage value, and generating a detection result.
9. A detection apparatus, comprising:
one or more processors;
a memory for storing one or more programs,
when executed by the one or more processors, cause the one or more processors to implement the apparatus for built-in capacitor detection method of any one of claims 1-7.
10. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the method of the detection apparatus of the built-in capacitor of any one of claims 1 to 7.
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| CN202011294573.1A CN112485640B (en) | 2020-11-18 | 2020-11-18 | Method, device, equipment and storage medium for detecting built-in capacitor |
| KR1020237010525A KR20230056773A (en) | 2020-11-18 | 2021-09-27 | Detection method, apparatus, detection device and storage medium of built-in capacitor |
| JP2023521908A JP7569450B2 (en) | 2020-11-18 | 2021-09-27 | Method, device, and storage medium for detecting built-in capacitors |
| PCT/CN2021/120914 WO2022105431A1 (en) | 2020-11-18 | 2021-09-27 | Built-in capacitor detection method and apparatus, detection device, and storage medium |
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| CN202011294573.1A CN112485640B (en) | 2020-11-18 | 2020-11-18 | Method, device, equipment and storage medium for detecting built-in capacitor |
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| JP (1) | JP7569450B2 (en) |
| KR (1) | KR20230056773A (en) |
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| WO2022105431A1 (en) * | 2020-11-18 | 2022-05-27 | 苏州华兴源创科技股份有限公司 | Built-in capacitor detection method and apparatus, detection device, and storage medium |
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| CN110353714B (en) * | 2019-07-19 | 2023-02-03 | 上海联影医疗科技股份有限公司 | CT equipment abnormity detection method, device, equipment and storage medium |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2022105431A1 (en) | 2022-05-27 |
| JP7569450B2 (en) | 2024-10-17 |
| KR20230056773A (en) | 2023-04-27 |
| CN112485640B (en) | 2023-06-27 |
| JP2023545138A (en) | 2023-10-26 |
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