CN112435935B - Chemical mechanical polishing load monitoring method for groove filling structure - Google Patents
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- 239000000126 substance Substances 0.000 title claims abstract description 56
- 238000005498 polishing Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000012544 monitoring process Methods 0.000 title claims abstract description 39
- 238000005530 etching Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 239000010937 tungsten Substances 0.000 claims description 13
- 238000005259 measurement Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 238000004364 calculation method Methods 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 25
- 238000004627 transmission electron microscopy Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a chemical mechanical polishing load monitoring method of a groove filling structure, which comprises the following steps: step one, forming grooves on a wafer by etching, measuring key dimensions of the grooves at different depths, and obtaining the relation between the depths of the grooves and the key dimensions; filling a first film layer in the groove; step three, performing chemical mechanical polishing to remove the first film outside the grooves and form a groove filling structure formed by the first film filled in each groove; and step four, measuring the critical dimension of the groove filling structure, and combining the relation between the depth of the groove and the critical dimension to obtain the height of the groove filling structure and obtain the corresponding chemical mechanical polishing load. The invention can realize quick nondestructive detection of the chemical mechanical polishing load of the groove filling structure, realize calculation automation, improve detection efficiency and reduce cost.
Description
Technical Field
The present invention relates to the field of semiconductor integrated circuit fabrication, and more particularly, to a method for monitoring a Chemical Mechanical Polishing (CMP) load (loading) of a trench filling structure.
Background
Chemical mechanical polishing technology is a means of achieving global planarization in integrated circuit fabrication, and is designed to achieve a surface that is both planar and free of scratches and impurity contamination.
Due to the variability of chemical attack during CMP, a perfectly flat surface is often not obtained. The associated effects of tungsten chemical mechanical polishing in the middle of the line (MEOL) of integrated circuit fabrication processes are caused: dishing (Dishing) and Erosion (Erosion). In addition, the thickness of the remainder of the CMP process is different in different areas due to the different pattern densities in the different areas during the process, i.e., significant loading is present during CMP.
The tungsten chemical mechanical polishing is mainly applied to a manufacturing process of a through hole or a contact hole filled with tungsten, wherein corresponding openings, namely grooves, are formed on an interlayer film, then a tungsten layer is filled in the grooves, and then the tungsten chemical mechanical polishing is carried out, so that the tungsten layer outside the grooves is removed, and the surfaces of the tungsten layer in the grooves and the grooves are leveled. Semiconductor integrated circuits are typically formed on wafers, and due to the large size of the wafers, the desired recesses are formed in different areas of the wafer; moreover, the pattern densities of the grooves in different areas of the wafer are not completely the same, and according to the difference of the pattern densities, there are Dense areas (Dense regions) and wide-sparse areas (Iso regions), so that the CMP loads of the different areas of the wafer are different, the CMP loads represent the difficulty of removing the film layer of the CMP, and the residual thickness or the surface height of the corresponding film layer are different after the CMP is completed. The difference in the height of the film surface after CMP is completed is obviously detrimental to the subsequent process.
In the new manufacturing process development stage, the prior art often requires characterization and analysis of the load between dense and wide open areas caused by chemical mechanical polishing by means of focused example beam cutting (FIB) and Transmission Electron Microscopy (TEM).
The use of FIB and TEM for characterization and analysis suffers from the disadvantages of (1) being very time consuming; (2) discard Wafer; (3) the cost is high. And Monitor pads (Monitor pads) are used to Monitor the load, the Monitor pads are not consistent with the interior of the pattern.
Disclosure of Invention
The invention aims to provide a chemical mechanical polishing load monitoring method for a groove filling structure, which can realize rapid nondestructive detection of chemical mechanical polishing load of the groove filling structure and can realize calculation automation.
In order to solve the technical problems, the method for monitoring the chemical mechanical polishing load of the groove filling structure provided by the invention comprises the following steps:
and firstly, etching a groove on a wafer, measuring critical dimensions at different depths of the groove, and obtaining the relation between the depth of the groove and the critical dimensions.
And secondly, filling a first film layer in the groove, wherein the groove is completely filled with the first film layer and extends out of the groove.
And thirdly, removing the first film layer outside the grooves by chemical mechanical polishing, polishing the first film layer in the groove area to be level with the top surface of the grooves, and forming a groove filling structure on the first film layer filled in each groove after the chemical mechanical polishing is completed.
And step four, measuring the critical dimension of the groove filling structure, and obtaining the height of the groove filling structure and the chemical mechanical polishing load corresponding to the groove filling structure by combining the measured critical dimension of the groove filling structure with the relation between the depth of the groove and the critical dimension.
A further improvement is that the wafer consists of a semiconductor substrate.
A further improvement is that the semiconductor substrate comprises a silicon substrate.
In a further improvement, in the first step, a plurality of grooves are formed on the wafer, and the grooves are distributed in different areas of the wafer.
In a further improvement, in the first step, a plurality of grooves are selected as monitoring points, and the monitoring points are distributed in a plurality of areas of the wafer.
In a further improvement, a plurality of chips are integrated on the semiconductor substrate of the wafer, and a plurality of semiconductor devices are integrated in each of the chips.
A further improvement is that the monitoring points are distributed at different positions of the chips or at different chips on the wafer or at a middle area or an edge area of the wafer.
The further improvement is that the groove is an opening of a through hole, and the groove filling structure is a through hole;
or the groove is a groove, and the groove filling structure is a metal connecting wire filled in the groove.
Further improvement is that the groove is formed on the interlayer film.
In a further improvement, when the groove filling structure is a through hole, the first film layer includes a tungsten layer.
When the groove filling structure is a metal connecting wire, the first film layer comprises an aluminum layer.
A further improvement is that in step one, critical dimensions at different depths of the groove are measured using a Critical Dimension Scanning Electron Microscope (CDSEM).
A further improvement is that in step four, the critical dimensions of the trench fill structure are measured by electron back-scattered image (BSE) measurement.
A further improvement is that electron back-scattering image measurements are achieved using the electron back-scattering image mode of the CDSEM.
A further improvement is performed in a post etch inspection (AEI) process in step one.
In the second step, before forming the tungsten layer, the method further comprises the steps of forming a Ti layer and a TiN layer and annealing.
A further improvement is that the semiconductor device includes a fin transistor (FinFET).
In the fourth step, the cmp load is obtained from the height ratio of the groove filling structure corresponding to each monitoring point.
Compared with the prior method which needs to adopt FIB to perform destructive cutting on products and adopts high-cost TEM to measure the height of the groove filling structure to monitor the chemical mechanical polishing load of the groove filling structure and adopts liner monitoring irrelevant to the pattern of the groove filling structure to monitor the chemical mechanical polishing load of the groove filling structure, the invention has the following beneficial effects:
according to the invention, the critical dimension of the groove is measured after the groove is finished or in the etching process of the groove, and the critical dimensions of different depths of the groove are measured, so that the relation between the depth of the groove and the critical dimension can be obtained; after the subsequent chemical mechanical polishing process is completed, the critical dimension of the groove filling structure is directly measured, and then the height of the groove filling structure and further the chemical mechanical polishing load corresponding to the groove filling structure can be obtained according to the critical dimension of the groove filling structure obtained by measurement and the relation between the depth of the groove and the critical dimension.
Therefore, the invention can convert the critical dimensions of the groove with different depths into the height of the groove filling structure and further obtain the chemical mechanical polishing load by measuring the critical dimensions of the groove filling structure, namely the invention can obtain the chemical mechanical polishing load by measuring the corresponding critical dimensions and combining calculation, and the product is not required to be cut, so that the product is not damaged; the height of the groove filling structure does not need to be directly measured, so that the groove filling structure can be realized without adopting a high-cost TEM (transmission electron microscope), such as CDSEM (scanning electron microscope) measurement; the invention is obtained by directly measuring the groove filling structure without measuring a liner irrelevant to the graph; therefore, the invention can realize quick nondestructive detection of the chemical mechanical polishing load of the groove filling structure, can realize calculation automation, and finally can improve the detection efficiency and save the cost, including saving the material cost, the time cost and the labor cost.
Drawings
The invention is described in further detail below with reference to the attached drawings and detailed description:
FIG. 1 is a flow chart of a method for monitoring a CMP load of a groove-filling structure according to an embodiment of the present invention;
FIG. 2A is a photograph of a groove formed in step one of the method of an embodiment of the present invention;
FIG. 2B is a photograph of a groove filling structure formed in step four of the method of the present invention;
FIG. 2C is a cross-sectional view of a groove of a method of an embodiment of the invention;
FIG. 2D is a cross-sectional view of a groove filling structure of a method of an embodiment of the present invention;
FIG. 3A is a graph of the depth and critical dimensions of the first groove of FIG. 2A;
FIG. 3B is a graph of the depth and critical dimensions of the second groove of FIG. 2A.
Detailed Description
FIG. 1 is a flow chart of a method for monitoring the CMP load of a groove filling structure according to an embodiment of the invention; the chemical mechanical polishing load monitoring method of the groove filling structure comprises the following steps:
and firstly, etching a groove on a wafer, measuring critical dimensions at different depths of the groove, and obtaining the relation between the depth of the groove and the critical dimensions.
In an embodiment of the present invention, the wafer is composed of a semiconductor substrate. The semiconductor substrate includes a silicon substrate.
In the embodiment of the invention, the groove is an opening of a through hole, and the groove filling structure is a through hole. In other embodiments can also be: the groove is a groove, and the groove filling structure is a metal connecting wire filled in the groove.
The groove is formed on the interlayer film.
The formation area of the recess is selected by a photolithography process, so that a photolithography process is required before etching.
CDSEM was used to measure critical dimensions at different depths of the groove. The CDSEM measurement step is performed directly in the AEI process.
A plurality of grooves are formed on the wafer, the grooves being distributed in different areas of the wafer.
Preferably, a plurality of grooves are selected as monitoring points, and the monitoring points are distributed in a plurality of areas of the wafer.
The semiconductor substrate of the wafer is integrated with a plurality of chips, and each chip is integrated with a plurality of semiconductor devices. The semiconductor device includes a FinFET.
The distribution positions of the monitoring points are different positions of the chips or different chips on the wafer or the middle area or the edge area of the wafer.
FIG. 2A is a photograph of a groove formed in step one of the methods of embodiments of the present invention; in fig. 2A, a plurality of grooves are included, wherein a first groove corresponding to the mark 101a and a second groove corresponding to the mark 101b are used, and a critical dimension of the first groove 101a is denoted by L and a critical dimension of the second groove 101b is denoted by M.
There are multiple measurements as the critical dimensions of the groove will be measured at different depths of the groove. FIG. 2C is a cross-sectional view of a groove of a method according to an embodiment of the invention; it can be seen that the critical dimensions of the groove were measured at a total of 4 depths, 4 depths being expressed as distances from the bottom surface of the groove, respectively: 0, S1, S2, S3; wherein 0 denotes the bottom surface of the groove.
The critical dimensions corresponding to the 4 positions for the first recess 101a are: l4, L3, L2, L1; from these measurements, a fitted curve 201 of the depth and critical dimensions corresponding to the first groove 101a as shown in fig. 3A can be obtained.
The critical dimensions corresponding to the 4 positions for the second recess 101b are: m4, M3, M2, M1. From these measurements, a fitted curve 202 of depth and critical dimensions corresponding to the second groove 101B as shown in FIG. 3B can be obtained.
And secondly, filling a first film layer in the groove, wherein the groove is completely filled with the first film layer and extends out of the groove.
In an embodiment of the present invention, the first film layer includes a tungsten layer. In other embodiments, when the groove filling structure is a metal wire, the first film layer includes an aluminum layer.
The method further comprises the step of forming a Ti layer and a TiN layer and annealing the Ti layer and the TiN layer before forming the tungsten layer.
And thirdly, removing the first film layer outside the grooves by chemical mechanical polishing, polishing the first film layer in the groove area to be level with the top surface of the grooves, and forming a groove filling structure on the first film layer filled in each groove after the chemical mechanical polishing is completed.
And step four, measuring the critical dimension of the groove filling structure, and obtaining the height of the groove filling structure and the chemical mechanical polishing load corresponding to the groove filling structure by combining the measured critical dimension of the groove filling structure with the relation between the depth of the groove and the critical dimension.
In the embodiment of the invention, the critical dimension of the groove filling structure is measured by an electron back scattering image measuring method. Preferably, electron back-scattering image measurement is achieved using the electron back-scattering image mode of the CDSEM.
As shown in fig. 2B, a photograph of the groove filling structure formed in step four of the method according to the embodiment of the present invention; the mark 102A corresponds to a first groove filling structure formed in the first groove 101a of fig. 2A; the mark 102b corresponds to a second groove filling structure formed in the second groove 101b of fig. 2A.
As can be seen from fig. 2B, after the formation of the groove filling structure, the critical dimension N1 of the first groove filling structure 102a and the critical dimension N2 of the second groove filling structure 102B can be measured directly by the electron back-scattered image mode of the CDSEM.
As can be seen in fig. 2C, the placement of critical dimensions N1 and N2, respectively, both positions of critical dimensions N1 and N2 correspond between S3 and S4. In the groove of fig. 2C, the critical dimensions N1 and N2 are not actually measured, so the heights of the critical dimensions N1 and N2 are calculated.
Fig. 2D shows a critical dimension N1 and a corresponding height X1 of the first trench filling structure 102a, and a critical dimension N1 and a corresponding height X2 of the second trench filling structure 102b, respectively. In the existing method, the heights X1 and X2 are required to be obtained by cutting through FIB and measuring through TEM, and in the embodiment of the present invention, the corresponding heights X1 and X2 are obtained by directly measuring the critical dimensions N1 and N2 of the surface and calculating. The description is as follows:
the calculation method of the height X1 comprises the following steps:
as shown in fig. 3A, the slope α of the curve 201 can be expressed as:
the slope α obtained by the above two formulas (1) and (2) is equal, so that the value of the height X1 can be obtained.
Also, the height X2 is calculated by:
as shown in fig. 3B, the slope β of the curve 202 can be expressed as:
the slope β obtained by the above two formulas (3) and (4) is equal, so that the value of the height X2 can be obtained.
For the wafer, if the surface of the wafer is flat, the surface heights of the locations are the same; if the surface is uneven, the corresponding surface heights are different, and the difference between the heights can be obtained by directly calculating the ratio between the heights, so that the flatness of the surface of the wafer can be obtained. Similarly, the cmp load can be obtained from the height ratio of the groove filling structure corresponding to each monitor point.
From equations (1) and (3), it can be obtained:
from equations (2) and (4) can be obtained:
the ratio α/β obtained by the above two formulas (5) and (6) is equal, so that the ratio of the heights X1 and X2 can be obtained:
compared with the existing method which needs to adopt FIB to perform destructive cutting on products and adopts high-cost TEM to measure the height of the groove filling structure to monitor the chemical mechanical polishing load of the groove filling structure and adopts liner monitoring irrelevant to the pattern of the groove filling structure to monitor the chemical mechanical polishing load of the groove filling structure, the embodiment of the invention has the following beneficial effects:
according to the embodiment of the invention, the critical dimension of the groove is measured after the groove is finished or in the etching process of the groove, and the critical dimensions of different depths of the groove are measured, so that the relation between the depth of the groove and the critical dimension can be obtained; after the subsequent chemical mechanical polishing process is completed, the critical dimension of the groove filling structure is directly measured, and then the height of the groove filling structure and further the chemical mechanical polishing load corresponding to the groove filling structure can be obtained according to the critical dimension of the groove filling structure obtained by measurement and the relation between the depth of the groove and the critical dimension.
Therefore, in the embodiment of the invention, only the critical dimensions of the grooves with different depths and the critical dimensions of the groove filling structure are measured to convert the critical dimensions into the height of the groove filling structure and further obtain the chemical mechanical polishing load, namely, the embodiment of the invention only the corresponding critical dimensions are measured and combined with calculation to obtain the chemical mechanical polishing load, and the product is not required to be cut, so that the product is not damaged; the height of the groove filling structure does not need to be directly measured, so that the groove filling structure can be realized without adopting a high-cost TEM (transmission electron microscope), such as CDSEM (scanning electron microscope) measurement; the embodiment of the invention is completely obtained by directly measuring the groove filling structure, and the liner irrelevant to the graph is not required to be measured; therefore, the embodiment of the invention can realize quick nondestructive detection of the chemical mechanical polishing load of the groove filling structure, can realize calculation automation, and finally can improve the detection efficiency and save the cost, including saving the material cost, the time cost and the labor cost.
The present invention has been described in detail by way of the embodiments, but these should not be construed as limiting the invention. Many variations and modifications may be made by one skilled in the art without departing from the principles of the invention, which is also considered to be within the scope of the invention.
Claims (17)
1. A method for monitoring the load of chemical mechanical polishing of a groove filling structure is characterized by comprising the following steps:
step one, forming grooves on a wafer by etching, measuring key dimensions of the grooves at different depths, and obtaining the relation between the depths of the grooves and the key dimensions;
filling a first film layer in the groove, wherein the first film layer completely fills the groove and extends out of the groove;
removing the first film outside the grooves by chemical mechanical polishing, and polishing the first film in the groove area to be level with the top surface of the grooves, wherein after the chemical mechanical polishing is completed, the first film filled in each groove is formed into a groove filling structure;
and step four, measuring the critical dimension of the groove filling structure, and obtaining the height of the groove filling structure and the chemical mechanical polishing load corresponding to the groove filling structure by combining the measured critical dimension of the groove filling structure with the relation between the depth of the groove and the critical dimension.
2. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 1, wherein: the wafer is composed of a semiconductor substrate.
3. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 2, wherein: the semiconductor substrate includes a silicon substrate.
4. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 2, wherein: in a first step, a plurality of grooves are formed on the wafer, the grooves being distributed in different areas of the wafer.
5. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 4, wherein: in the first step, a plurality of grooves are selected as monitoring points, and the monitoring points are distributed in a plurality of areas of the wafer.
6. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 5, wherein: the semiconductor substrate of the wafer is integrated with a plurality of chips, and each chip is integrated with a plurality of semiconductor devices.
7. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 6, wherein: the distribution positions of the monitoring points are different positions of the chips or different chips on the wafer or the middle area or the edge area of the wafer.
8. The method for monitoring the cmp load of a recess filling structure according to any one of claims 1 to 7, wherein: the groove is an opening of the through hole, and the groove filling structure is the through hole;
or the groove is a groove, and the groove filling structure is a metal connecting wire filled in the groove.
9. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 8, wherein: the groove is formed on the interlayer film.
10. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 8, wherein: when the groove filling structure is a through hole, the first film layer comprises a tungsten layer;
when the groove filling structure is a metal connecting wire, the first film layer comprises an aluminum layer.
11. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 8, wherein: in step one, CDSEM is used to measure critical dimensions at different depths of the recess.
12. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 10, wherein: and step four, measuring the critical dimension of the groove filling structure by an electron back scattering image measuring method.
13. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 12, wherein: electron back-scattering image measurement was achieved using the electron back-scattering image mode of CDSEM.
14. The method for monitoring the load of a chemical mechanical polishing process of a groove filling structure according to claim 11, wherein: in step one, the AEI process is performed.
15. The method for monitoring the load of a chemical mechanical polishing process of a groove filling structure according to claim 11, wherein: in the second step, before forming the tungsten layer, the method further comprises the steps of forming a Ti layer and a TiN layer and annealing.
16. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 6, wherein: the semiconductor device includes a FinFET.
17. The method for monitoring the load of chemical mechanical polishing of a groove filling structure according to claim 5, 6 or 7, wherein: in the fourth step, the cmp load is obtained from the height ratio of the groove filling structure corresponding to each monitoring point.
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| CN101572241A (en) * | 2008-04-30 | 2009-11-04 | 中芯国际集成电路制造(北京)有限公司 | Resistance simulation method for metal interconnection structure |
| CN105563299A (en) * | 2014-11-05 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method for metal |
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