CN112391597B

CN112391597B - Semiconductor processing equipment

Info

Publication number: CN112391597B
Application number: CN202011196032.5A
Authority: CN
Inventors: 金晨; 李建银
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2020-10-30
Filing date: 2020-10-30
Publication date: 2022-12-30
Anticipated expiration: 2040-10-30
Also published as: CN112391597A

Abstract

The embodiment of the application provides semiconductor process equipment. The semiconductor processing equipment is used for carrying out rare earth deposition process on a substrate, and comprises: the electrode assembly and the air inlet mechanism are arranged on the top wall of the process chamber and extend along a first direction; the air inlet mechanism is arranged around the electrode assembly; the moving mechanism is arranged at the bottom in the process chamber, extends along a second direction, and is used for bearing and driving the substrate to move along the second direction, and the second direction is intersected with the first direction; the air exhaust mechanism is arranged on the top wall of the process chamber and communicated with the process chamber, the air exhaust mechanism is positioned on one side of the electrode assembly, the air exhaust mechanism is provided with an air exhaust opening in the process chamber, the air exhaust opening extends along the first direction and is close to the air inlet mechanism, and the air exhaust opening is used for enabling process gas in the process chamber to uniformly pass through the surface of the substrate. According to the embodiment of the application, the sputtering rate of the target can be greatly improved while the coating uniformity is ensured, so that the production cost is greatly reduced.

Description

Semiconductor processing equipment

Technical Field

The application relates to the technical field of semiconductor processing, in particular to semiconductor process equipment.

Background

At present, in the production process of rare earth magnetic materials, the surface of a neodymium iron boron substrate needs to be subjected to rare earth deposition treatment by physical vapor deposition, the neodymium iron boron substrate is uniformly stacked on a tray and sequentially enters a process chamber of semiconductor process equipment, and a rare earth target is arranged below an electrode for sputtering coating. According to the process requirements, the coating thicknesses of all substrates on the tray are required to be kept within a certain range, the coating thickness errors of all the substrates are required to be less than +/-5%, the moving direction of the tray is perpendicular to the length direction of the target when general semiconductor process equipment is designed, the coating uniformity along the moving direction of the tray is good after the whole tray passes below the target, but the coating uniformity along the length direction of the target is ensured according to the design of an electrode, the design of an air distribution system and the design of an air exhaust system.

In the existing vacuum sputtering rare earth coating system technology, due to the technical barrier of the target end design, in order to ensure that the coating uniformity of a substrate on a tray along the length direction of the target meets the requirement, a mode that a very long electrode and the target correspond to a tray with a small size is adopted, so that the end effect (namely the condition that two ends of the target are etched quickly and unevenly) of the target is prevented from influencing the coating uniformity of the substrate on the tray, and although the coating uniformity requirement of the substrate can be ensured, most of sputtered rare earth target atoms do not fall on the substrate, thereby generating great waste. In addition, because the rare earth target material has certain ferromagnetism, a common electrode cannot exert normal sputtering capacity, and finally the sputtering rate of the rare earth target material is low.

Disclosure of Invention

The application provides semiconductor process equipment aiming at the defects of the prior art, and aims to solve the technical problem of how to ensure the coating uniformity and improve the utilization rate of a target material in the prior art.

The embodiment of the application provides semiconductor process equipment for carrying out a deposition process on a substrate, which comprises the following steps: the device comprises a process chamber, an electrode assembly, an air inlet mechanism, a moving mechanism and an air exhaust mechanism; the electrode assembly and the gas inlet mechanism are arranged on the top wall of the process chamber and extend along a first direction; the air intake mechanism is disposed around the electrode assembly; the moving mechanism is arranged at the bottom in the process chamber, extends along a second direction and is used for bearing and driving the substrate to move along the second direction, and the second direction is intersected with the first direction; the air pumping mechanism is arranged on the top wall of the process chamber and communicated with the process chamber, the air pumping mechanism is positioned on one side of the electrode assembly, the air pumping mechanism is provided with an air pumping hole in the process chamber, the air pumping hole extends along the first direction and is arranged close to the air inlet mechanism, and the air pumping hole is used for carrying out pressure equalization on passing process gas so that the process gas in the process chamber can uniformly pass through the surface of the substrate.

In an embodiment of the present application, the gas inlet mechanism includes two gas inlet devices disposed along the first direction, the two gas inlet devices are disposed on the top wall of the process chamber and symmetrically disposed on two sides of the electrode assembly, each gas inlet device is disposed thereon and used for delivering the process gas into the process chamber through the gas inlet hole.

In one embodiment of the present application, the pumping mechanism comprises a flow guiding cover and a flow equalizing plate, wherein the top end of the flow guiding cover is connected with the inner side of the top wall of the process chamber, the bottom end of the flow guiding cover is positioned above the moving mechanism, and the flow guiding cover is arranged around the gas inlet device and used for guiding the plasma to the upper part of the substrate; the flow equalizing plate is arranged in the process chamber, and the side edge of the flow equalizing plate close to the flow guide cover and the bottom end of the flow guide cover are arranged at intervals to form the air suction opening.

In one embodiment of the present application, the pumping mechanism includes a flow guiding cover and a flow equalizing plate, a top end of the flow guiding cover is connected to an inner side of a top wall of the process chamber, a bottom end of the flow guiding cover is located above the moving mechanism, and the flow guiding cover is disposed around the gas inlet device for guiding the plasma above the substrate; the flow equalizing plate is arranged in the process chamber, the side edge of the flow equalizing plate close to the flow guide cover is connected with the bottom end of the flow guide cover, and a plurality of pumping holes which are arranged in parallel are formed in the flow equalizing plate.

In an embodiment of the present application, the air pumping mechanism further includes an air pumping device and a flow regulating valve disposed in the air pumping device, the air pumping device is disposed on the top wall of the process chamber, and the flow regulating valve is used for regulating the gas flow of the air pumping device.

In an embodiment of the present application, the air-extracting device is a high vacuum pump, and the flow regulating valve is a butterfly valve.

In an embodiment of the present application, the moving mechanism includes a tray and a moving device, the tray is disposed on the moving device and is used for carrying one or more substrates; the moving device is used for driving the tray to drive the substrate to move.

In an embodiment of the present application, the electrode assembly and the air inlet mechanism have a first dimension in the first direction, the tray has a second dimension in the first direction, the first dimension is greater than the second dimension by a predetermined value, and the predetermined value is greater than or equal to 150 mm and less than or equal to 200 mm.

In an embodiment of the present application, the electrode assembly, the gas inlet mechanism, the moving mechanism and the gas exhaust mechanism are all disposed centrally in the first direction.

In an embodiment of the present disclosure, the electrode assembly includes a rotating cathode and a rare earth target, the rotating cathode is disposed outside the top wall of the process chamber, and the rare earth target is correspondingly disposed inside the top wall of the process chamber.

The technical scheme provided by the embodiment of the application has the following beneficial technical effects:

according to the embodiment of the application, the pumping hole is formed in the process chamber, the process gas has certain resistance to generate a pressure equalizing effect when passing through the pumping hole, so that the process gas in the sputtering area uniformly passes through the surface of the substrate, the atmosphere in the sputtering area is uniform, and the coating uniformity of the substrate is ensured. As the process gas can uniformly pass through the surface of the target material, the whole target material works in uniform atmosphere, the end effect of the target material is reduced to the maximum extent, the length of the target material can be reduced, and the sputtering rate of the target material is greatly improved.

Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.

Drawings

The above and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

fig. 1 is a schematic front view of semiconductor processing equipment according to an embodiment of the present application;

fig. 2 is a schematic top view of a semiconductor processing apparatus according to an embodiment of the present disclosure;

FIG. 3 is a schematic cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present disclosure with a structure of the omitted portion omitted;

FIG. 4 is a schematic cross-sectional view of a semiconductor processing apparatus illustrating the flow of process gases provided in an embodiment of the present application;

FIG. 5 is a schematic cross-sectional view of a semiconductor processing apparatus illustrating a top view of a process gas flow direction provided by an embodiment of the present application;

FIG. 6 is a schematic side view of semiconductor processing apparatus according to an embodiment of the present application;

FIG. 7 is a schematic front view of a semiconductor processing apparatus illustrating the flow of process gases provided in accordance with an embodiment of the present application;

FIG. 8 is a schematic enlarged partial view of an embodiment of the present disclosure showing an air pumping port in operation;

fig. 9 is a schematic top view illustrating a flow direction of process gases in a semiconductor processing apparatus according to an embodiment of the present application.

Detailed Description

The present application is described in detail below and examples of embodiments of the present application are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements with the same or similar functionality throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.

It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The following describes the technical solution of the present application and how to solve the above technical problems in detail by specific embodiments.

An embodiment of the present application provides a semiconductor processing apparatus for performing a rare earth deposition process on a substrate, where a schematic structural diagram of the semiconductor processing apparatus is shown in fig. 1, and the semiconductor processing apparatus includes: the device comprises a process chamber 1, an electrode assembly 2, an air inlet mechanism 3, a moving mechanism 4 and an air exhaust mechanism 5; the electrode assembly 2 and the gas inlet mechanism 3 are both arranged on the top wall 11 of the process chamber 1 and are both arranged in an extending manner along a first direction; the gas inlet mechanism 3 is arranged around the wire electrode component 2; the moving mechanism 4 is disposed at the bottom of the process chamber 1, and extends along a second direction, and is configured to bear and drive the substrate 100 to move along the second direction, where the second direction intersects with the first direction; the air pumping mechanism 5 is arranged on the top wall 11 of the process chamber 1 and communicated with the process chamber 1, the air pumping mechanism 5 is located on one side of the electrode assembly 2, the air pumping mechanism 5 is provided with an air pumping hole 51 in the process chamber 1, the air pumping hole 51 extends along a first direction and is arranged close to the air inlet mechanism 3, and the air pumping hole 51 is used for equalizing pressure of passing process gas so that the process gas in the process chamber 1 can uniformly pass through the surface of a substrate, wherein the equalizing pressure refers to pressure equalization, and the purpose of equalizing pressure of the passing process gas is to equalize pressure of the process gas at each part of the air pumping hole.

As shown in fig. 1 and fig. 2, the semiconductor processing apparatus may be specifically applied to the production of rare earth magnetic materials, for example, heavy rare earth deposition coating treatment is performed on the surface of the substrate 100 of neodymium iron boron through a physical vapor deposition process, although the embodiment of the present invention is not limited to specific types of rare earths, and may also be applied to light rare earths or medium rare earths, for example. The process chamber 1 has a rectangular parallelepiped structure surrounded by a top wall 11, a bottom wall 12 and four side walls 13, and the whole process chamber 1 may be made of a metal material, but the embodiment of the present invention is not limited thereto. The electrode assembly 2 and the gas inlet mechanism 3 are both disposed on the top wall 11 of the process chamber 1, and may both extend in a first direction, which may be, for example, the width direction of the process chamber 1. The gas inlet mechanism 3 is disposed around the electrode assembly 2, and may be connected to a gas supply device (not shown) of the semiconductor process apparatus for uniformly supplying the process gas into the process chamber 1; the electrode assembly 2 is used to ionize the process gas within the process chamber 1 to form a plasma, which forms a sputtering zone above the moving mechanism 4 by bombarding the electrode assembly 2 to sputter the surface of the electrode assembly 2. The moving mechanism 4 may be specifically disposed at the bottom of the process chamber 1, and the moving mechanism 4 is configured to move the one or more substrates 100 along a second direction of the process chamber 1, for example, the second direction may be a length direction of the process chamber 1, where the second direction intersects with the first direction. For example, the moving mechanism 4 drives the substrate 100 to pass through the sputtering region below the electrode assembly 2 along the left-right direction in the drawing to complete the film coating on the substrate 100, and the second direction intersects the first direction perpendicularly, but the embodiment of the present application is not limited thereto as long as the second direction intersects the first direction. The pumping mechanism 5 may be disposed on the top wall 11 of the process chamber 1 and communicate with the interior of the process chamber 1, for example, the pumping mechanism 5 may be disposed on the right side of the electrode assembly 2, but the embodiment of the present invention is not limited thereto. The pumping port 51 may be specifically located inside the process chamber 1, and may be specifically a strip-shaped hole extending along the first direction. The process gas has certain resistance to generate a pressure equalizing effect when passing through the pumping hole, so that the process gas in the sputtering area uniformly passes through the surface of the substrate, the atmosphere in the sputtering area is uniform, and the coating uniformity of the substrate is ensured. As the process gas can uniformly pass through the surface of the target material, the whole target material works in a uniform atmosphere, the end effect of the target material is reduced to the greatest extent, the length of the target material can be reduced, and the sputtering rate of the target material is greatly improved so as to save the production cost.

It should be noted that the embodiment of the present application is not limited to the specific structure of the process chamber 1 and the specific position of each component, and those skilled in the art can adjust the arrangement according to the actual requirement.

In an embodiment of the present application, as shown in fig. 1 and 2, the gas inlet mechanism 3 includes two gas inlets 31 disposed along a first direction, the two gas inlets 31 are disposed on the top wall 11 of the process chamber 1 and symmetrically disposed on two sides of the electrode assembly 2, each gas inlet 31 is disposed with a gas inlet, and the gas inlets 31 are used for delivering the process gas into the process chamber 1 through the gas inlets. Specifically, the air intake device 31 is a tubular structure with a hollow inside, and a plurality of air intake holes are provided on a side surface facing the moving mechanism 4, that is, a plurality of air intake holes penetrate through a bottom surface of the air intake device 31. Two gas inlets 31 may be disposed on the top wall 11 of the process chamber 1 by means of bolts, and the left and right sides of the electrode assembly 2 are symmetrically disposed to achieve uniform delivery of the process gas.

In one embodiment of the present application, as shown in fig. 1 and 2, the pumping mechanism 5 includes a flow guiding cover 52 and a flow equalizing plate 53, wherein the top end of the flow guiding cover 52 is connected to the inner side of the top wall 11 of the process chamber 1, the bottom end of the flow guiding cover 52 is located above the moving mechanism 4, and the flow guiding cover 52 is disposed around the gas inlet 31 for guiding the plasma above the substrate 100; the flow equalizing plate 53 is disposed in the process chamber 1, and the flow equalizing plate 53 is spaced apart from the bottom end of the flow guiding cover 52 near the side of the flow guiding cover 52 to form the pumping holes 51.

As shown in fig. 1 and fig. 2, the air guide sleeve 52 is a rectangular sleeve structure surrounded by four air guide plates, the air guide sleeve 52 is disposed around the peripheries of the two air inlet devices 31, the top end of the air guide sleeve 52 is connected to the top wall 11 of the process chamber 1 by welding, for example, and the bottom end thereof may be located above the moving mechanism 4 and spaced apart from the moving mechanism 4 in the height direction. By adopting the above design, the range of the sputtering area can be limited by the diversion cover 52, so that the sputtering rate of the target material is higher, and the utilization rate of the target material is further improved to save the production cost while the coating uniformity of the substrate 100 is improved. In addition, the air guide sleeve 52 is simple in structure, and application and maintenance cost can be effectively reduced. The flow equalizing plate 53 may be a rectangular plate made of a metal material, the flow equalizing plate 53 is disposed in the process chamber 1 and located above the moving mechanism 4, and three sides of the flow equalizing plate 53 may be connected to the sidewall 13 of the process chamber 1, for example, by welding, but the embodiment of the present invention is not limited thereto. The side of the uniform flow plate 53 close to the air guide sleeve 52 is matched with the bottom end of the air guide sleeve 52 to form the air suction opening 51. In practical application, the process chamber 1 has a large internal space, so that the distribution of the process gas is wide, and the uniform flow plate 53 is disposed on the flow path of the process gas, so that a large amount of the process gas has a certain resistance to generate a pressure equalizing effect when passing through the pumping hole 51, thereby uniformly pumping the atmosphere near the sputtering region out of the pumping hole 51 and further ensuring the uniformity of the coating. According to the embodiment of the application, the coating uniformity can be realized by adopting a simpler structure, so that the application and maintenance cost is greatly reduced.

Optionally, the pumping mechanism 5 further comprises a shielding plate 56, the shielding plate 56 is located at the bottom of the left side of the pod 52 and is connected to the pod 52 and the sidewall 13 of the process chamber 1, and the shielding plate 56 can prevent the process gas from flowing to the left side of the pod 52, thereby improving the sputtering efficiency.

In one embodiment of the present application, referring to fig. 1 to 2 in combination, the pumping mechanism 5 includes a flow guiding cover 52 and a flow homogenizing plate 53, wherein the top end of the flow guiding cover 52 is connected to the inner side of the top wall 11 of the process chamber 1, the bottom end of the flow guiding cover 52 is located above the moving mechanism 4, and the flow guiding cover 52 is disposed around the gas inlet 31 for guiding the plasma above the substrate 100; the flow equalizing plate 53 is disposed in the process chamber 1, a side of the flow equalizing plate 53 close to the flow guide sleeve 52 is connected to a bottom end of the flow guide sleeve 52, and a plurality of pumping holes 51 arranged in parallel may be formed on the flow equalizing plate 53. Specifically, the side of the flow equalizing plate 53 may be directly connected to the bottom end of the air guide sleeve 52, the pumping holes 51 are directly formed on the flow equalizing plate 53, and the number and the inner diameter of the pumping holes 51 may be adjusted according to different process types, for example, the inner diameter of the pumping holes 51 in the second direction may be 5, 10, 20, 25, 35, 40, 42, 48, 50 mm, etc. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings in real circumstances. By adopting the design, the structure of the application embodiment is simple and reliable, and the applicability and the application range can be effectively improved.

In an embodiment of the present application, as shown in fig. 3 to 5, the pumping mechanism 5 further includes a pumping device 54 and a flow regulating valve 55 disposed in the pumping device 54, the pumping device 54 is disposed on the top wall 11 of the process chamber 1, and the flow regulating valve 55 is used for regulating the gas flow of the pumping device 54. Alternatively, the gas-withdrawal device 54 is a high-vacuum pump and the flow-regulating valve 55 is a butterfly valve.

As shown in fig. 1 to 5, the air-extracting device 54 is a high vacuum pump, the flow-regulating valve 55 is a butterfly valve, the air-extracting device 54 is disposed on the top wall 11 of the process chamber 1, and the two can be connected by screw sealing, and the air-extracting device 54 is used for evacuating the process chamber 1. The flow control valve 55 may be disposed in the pumping device 54 for adjusting the pumping speed of the pumping device 54, or the flow control valve 55 and the pumping device 54 may be disposed on the top wall 11 of the process chamber 1 in sequence, but the embodiment of the present invention is not limited thereto. Referring to fig. 4 and 5, the arrows in the drawings indicate the flow direction of the process gas, and the pressure in the process chamber 1 near the pumping device 54 is relatively low, so the process gas flows toward the pumping device 54, and the process gas is widely distributed due to the large internal space of the process chamber 1, and the uniform flow plate 53 is disposed on the flow path of the process gas, so that a large amount of process gas is influenced by the resistance force when passing through the pumping holes 51 to generate a certain pressure equalizing effect, so that the atmosphere near the sputtering region is uniformly pumped out of the pumping holes 51, thereby ensuring the uniformity of the coating. By adopting the design, the air extracting device 54 adopts the high vacuum pump, so that the working efficiency can be greatly improved, and the production efficiency is improved; since the flow control valve 55 can rapidly and precisely adjust the pumping speed, the vacuum state in the process chamber 1 can be controlled in real time.

It should be noted that the embodiment of the present application is not limited to the specific type of the air pumping device 54 and the flow regulating valve 55, for example, the flow regulating valve 55 can be implemented by other types of valves. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.

In an embodiment of the present application, as shown in fig. 1, the moving mechanism 4 includes a tray 41 and a moving device 42, the tray 41 is disposed on the moving device 42 for carrying one or more substrates 100; the moving device 42 is used for driving the tray 41 to move the substrate 100.

As shown in fig. 1, the tray 41 is a disk-shaped structure made of metal, and the tray 41 is used for carrying one or more substrates 100. The specific shape of the substrate 100 may be a rectangle or a circle, which is not limited in this application. The moving device 42 specifically includes a base 421 and a roller structure 422, the base 421 is disposed at the bottom of the process chamber 1, a plurality of rollers are disposed in parallel along a second direction, that is, are disposed in parallel along a left-right direction in the drawing, and the plurality of roller structures 422 may be driven by a motor to rotate. In practical applications, the tray 41 may be directly placed on the plurality of roller structures 422, and the roller structures 422 rotate to drive the tray 41 and the substrate 100 to move in the left-right direction. By adopting the design, the embodiment of the application has reasonable structural design, can effectively reduce the failure rate and prolong the service life.

In one embodiment of the present application, as shown in fig. 1 and 6, the electrode assembly 2 and the air inlet mechanism 3 have a first dimension in the first direction, and the tray 41 has a second dimension in the first direction, wherein the first dimension is greater than the second dimension by a predetermined value, and the predetermined value is greater than or equal to 150 mm and less than or equal to 200 mm. Alternatively, the electrode assembly 2, the air intake mechanism 3, the moving mechanism 4, and the air exhaust mechanism 5 are all centrally disposed in the first direction.

As shown in fig. 1 and 6, since the pumping hole 51 is formed in the process chamber 1 and the flow guide 52 is formed on the periphery of the gas inlet 31, and the electrode assembly 2 and the gas inlet mechanism 3 have a first dimension in the first direction and the tray 41 has a second dimension in the first direction, the first dimension is larger than the second dimension by a predetermined value, specifically, 150 mm or more and 200 mm or less. By adopting the design, the sputtering area has uniform atmosphere, so that the coating uniformity of the substrate is ensured, the length of the target is greatly shortened, the purchase cost of the target is greatly saved, and the production cost is effectively reduced. In order to further improve the uniformity of the atmosphere in the process chamber 1, the electrode assembly 2, the gas inlet mechanism 3, the moving mechanism 4, and the gas exhaust mechanism 5 may be disposed centrally in the first direction, i.e., each of the components is disposed in a left-right symmetrical manner in a side view of the process chamber 1.

In one embodiment of the present application, as shown in fig. 1, the electrode assembly 2 includes a rotating cathode 21 and a rare earth target 22, the rotating cathode 21 is disposed outside the top wall 11 of the process chamber 1, and the rare earth target 22 is correspondingly disposed inside the top wall 11 of the process chamber 1. In particular, the rotating cathode 21 is in particular arranged outside the top of the process chamber 1 and is connected to the top wall 11 of the process chamber 1. The rare earth target 22 includes, but is not limited to, a terbium target or dysprosium target, and the rare earth target 22 is specifically disposed inside the top wall 11 of the process chamber 1 and corresponds to the position of the rotating cathode 21. Due to the structural characteristics of the rotating cathode 21, unnecessary waste of the rare earth target can be effectively avoided, and the production cost is further saved.

In order to further explain the embodiments of the present application, the following description will be made to the working principle of the embodiments of the present application with reference to the accompanying drawings.

As shown in fig. 1, the pumping port 51 is disposed in the process chamber 1, so that the pumping mechanism 5 has stable and reliable pumping uniformity, thereby effectively solving the problem that the size of the electrode assembly 2 and the gas inlet mechanism 3 along the width of the process chamber 1 is much larger than that of the substrate 100 due to the target end effect. As shown in fig. 7, the dashed lines indicate the approximate path of the process gas, a large amount of the process gas will move towards the pumping device 54 with a lower pressure, the process gas can only diffuse and move within the limited range of the flow distribution plate 53 due to the action of the flow distribution plate 53 and move towards the pumping device 54 according to a fixed path, and due to the existence of the pumping holes 51, the process gas will have a certain resistance before entering the pumping holes 51 with a narrow space, and a queuing phenomenon will occur at the whole pumping holes 51, specifically, as shown in fig. 8, after passing through the pumping holes 51, the process gas will directly move towards the pumping device 54. Since the process gas moves in a vacuum environment to select a path having the smallest resistance and the pumping port 51 has almost the same resistance in the vicinity thereof, the process gas moves in the closest path toward a direction having a lower pressure. As shown in fig. 9, the process gas can uniformly pass through the surface of the rare earth target 22, the entire rare earth target 22 works in a uniform atmosphere, and the influence of the end effect of the target on the uniformity of the coating film is reduced to the greatest extent, so that compared with the prior art, the length of the rare earth target 22 can be greatly shortened, and for this reason, the rotating cathode 21 and the air intake mechanism 3 are also shortened along with the rare earth target 22, thereby greatly reducing the application and manufacturing cost.

By applying the embodiment of the application, at least the following beneficial effects can be realized:

according to the embodiment of the application, the pumping hole is formed in the process chamber, the process gas has certain resistance to generate a pressure equalizing effect when passing through the pumping hole, so that the process gas in the sputtering area uniformly passes through the surface of the substrate, the atmosphere in the sputtering area is uniform, and the uniformity of the film coating of the substrate is ensured. As the process gas can uniformly pass through the surface of the target material, the whole target material works in uniform atmosphere, and the end effect of the target material is reduced to the maximum extent, so that the sputtering rate of the target material is greatly improved, and the production cost is saved.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.

The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.

Claims

1. A semiconductor processing apparatus for performing a deposition process on a substrate, comprising: the device comprises a process chamber, an electrode assembly, an air inlet mechanism, a moving mechanism and an air exhaust mechanism;

the electrode assembly and the gas inlet mechanism are arranged on the top wall of the process chamber and extend along a first direction; the air intake mechanism is disposed around the electrode assembly;

the moving mechanism is arranged at the bottom in the process chamber, extends along a second direction and is used for bearing and driving the substrate to move along the second direction, and the second direction is intersected with the first direction;

the air pumping mechanism is arranged on the top wall of the process chamber and communicated with the process chamber, the air pumping mechanism is positioned on one side of the electrode assembly, the air pumping mechanism is provided with an air pumping hole in the process chamber, the air pumping hole extends along the first direction and is arranged close to the air inlet mechanism, and the air pumping hole is used for carrying out pressure equalization on passing process gas so that the process gas in the process chamber can uniformly pass through the surface of the substrate;

the gas inlet mechanism comprises two gas inlet devices arranged along the first direction, the two gas inlet devices are arranged on the top wall of the process chamber and are symmetrically arranged on two sides of the electrode assembly, each gas inlet device is provided with a gas inlet hole, and the gas inlet devices are used for conveying process gas into the process chamber through the gas inlet holes;

the gas pumping mechanism comprises a flow guide cover and a flow equalizing plate, the top end of the flow guide cover is connected with the inner side of the top wall of the process chamber, the bottom end of the flow guide cover is positioned above the moving mechanism, and the flow guide cover is arranged around the gas inlet device and used for guiding plasma to the position above the substrate; the flow equalizing plate is arranged in the process chamber, the side edge of the flow equalizing plate close to the flow guide cover and the bottom end of the flow guide cover are arranged at intervals to form the air suction ports, or the side edge of the flow equalizing plate close to the flow guide cover is connected with the bottom end of the flow guide cover, and a plurality of air suction ports which are arranged in parallel are formed on the flow equalizing plate.

2. The semiconductor processing apparatus according to claim 1, wherein the pumping mechanism further comprises a pumping device disposed on a top wall of the process chamber and a flow regulating valve disposed within the pumping device for regulating a gas flow of the pumping device.

3. The semiconductor processing apparatus of claim 2, wherein the gas evacuation device is a high vacuum pump and the flow control valve is a butterfly valve.

4. The semiconductor processing apparatus according to any one of claims 1 to 3, wherein the moving mechanism comprises a tray and a moving device, the tray being disposed on the moving device for carrying one or more of the substrates; the moving device is used for driving the tray to drive the substrate to move.

5. The semiconductor processing apparatus of claim 4, wherein the electrode assembly and the gas inlet mechanism have a first dimension in the first direction, the tray has a second dimension in the first direction, the first dimension is greater than the second dimension, and a difference between the first dimension and the second dimension is a predetermined value greater than 150 mm and equal to or less than 200 mm.

6. The semiconductor processing apparatus of claim 5, wherein the electrode assembly, the gas inlet mechanism, the moving mechanism, and the gas exhaust mechanism are centered in the first direction.

7. The semiconductor processing apparatus of any one of claims 1 to 3, wherein the electrode assembly comprises a rotating cathode disposed outside a top wall of the process chamber and a rare earth target correspondingly disposed inside the top wall of the process chamber.