CN112363350A

CN112363350A - Back plate, backlight module and preparation method of back plate

Info

Publication number: CN112363350A
Application number: CN202011245275.3A
Authority: CN
Inventors: 刘欢; 曾亭; 江玉; 许占齐; 胡海峰; 董万如; 李永飞; 杨健; 徐鹏; 李猛猛; 高琪; 卢鑫泓; 齐琪
Original assignee: BOE Technology Group Co Ltd; Hefei Xinsheng Optoelectronics Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd; Hefei Xinsheng Optoelectronics Technology Co Ltd
Priority date: 2020-11-10
Filing date: 2020-11-10
Publication date: 2021-02-12
Anticipated expiration: 2040-11-10
Also published as: CN112363350B

Abstract

The disclosure provides a back plate, a backlight module and a preparation method of the back plate, belongs to the technical field of display, and can solve the technical problem that the existing back plate is poor in reliability. The present disclosure provides a backplane comprising: a substrate; a first connection electrode and a second connection electrode both disposed on the substrate; the first insulating layer and the first protective layer are sequentially arranged on one side, away from the substrate, of the layer where the first connecting electrode and the second connecting electrode are located; the first bonding pad, the second bonding pad and the third bonding pad are all arranged on one side of the first protective layer, which is far away from the substrate; the second insulating layer and the second protective layer are sequentially arranged on one side, away from the substrate, of the layer where the first bonding pad, the second bonding pad and the third bonding pad are located; the material curing temperature of the first insulating layer is lower than 150 ℃, and the material of the first protective layer is an inorganic material; and/or the curing temperature of the material of the second insulating layer is lower than 150 ℃, and the material of the second protective layer is an inorganic material.

Description

Back plate, backlight module and preparation method of back plate

Technical Field

The disclosure belongs to the technical field of display, and particularly relates to a back plate, a backlight module and a preparation method of the back plate.

Background

With the rise and the maturity of the Organic Light-Emitting Diode (OLED) display technology, the OLED products are becoming new in the market. In contrast, Liquid Crystal Display (LCD) technology has certain performance differences from OLED Display technology in all aspects. In order to better improve the display performance of the LCD, especially to surpass the OLED display technology in terms of contrast ratio, and to keep the price and reliability advantages of the LCD, Mini Light-Emitting Diode (Mini-LED) backplanes have come into use.

At present, the Mini-LED back plate is mainly manufactured by two processes of high temperature or low temperature, an inorganic layer is required to be added in front of a high-temperature insulating layer in the high-temperature process to protect an electrode from being oxidized, the inorganic layer is easy to bubble and peel due to the high temperature of the high-temperature insulating layer, and a dry etching process is required to be carried out behind the high-temperature insulating layer, so that burrs are easily generated at the edge of the high-temperature insulating layer, and the product yield is influenced; the low-temperature insulating layer adopted in the low-temperature process is not resistant to high temperature, reflow soldering needs to be adopted in the subsequent die bonding process, and the structure of the low-temperature insulating layer is easily damaged by high temperature, so that the product quality is influenced.

Disclosure of Invention

The present disclosure is directed to at least one of the technical problems in the prior art, and provides a back plate, a backlight module and a method for manufacturing the back plate.

In a first aspect, an embodiment of the present disclosure provides a backplane, including:

a substrate;

a first connection electrode and a second connection electrode both disposed on the substrate;

the first insulating layer and the first protective layer are sequentially arranged on one side, away from the substrate, of the layer where the first connecting electrode and the second connecting electrode are located; a first via hole and a second via hole are formed in the first insulating layer and the first protective layer, and orthographic projections of the first via hole and the second via hole on the substrate are at least partially overlapped with orthographic projections of the first connecting electrode and the second connecting electrode on the substrate respectively;

the first bonding pad, the second bonding pad and the third bonding pad are arranged on one side, away from the substrate, of the first protection layer, the first bonding pad is electrically connected with the first connecting electrode through the first via hole, and the third bonding pad is electrically connected with the second connecting electrode through the second via hole;

the second insulating layer and the second protective layer are sequentially arranged on one side, away from the substrate, of the layer where the first bonding pad, the second bonding pad and the third bonding pad are located; a third via hole, a fourth via hole and a fifth via hole are formed in the second insulating layer and the second protective layer, and orthographic projections of the third via hole, the fourth via hole and the fifth via hole on the substrate are respectively at least partially overlapped with orthographic projections of the first pad, the second pad and the third pad on the substrate; the third via is configured to electrically connect the first pad with a first electrode of a light emitting device; the fourth via is configured to electrically connect the second pad with a second electrode of a light emitting device; the fifth via is configured to electrically connect the third pad with a driving circuit board;

the material curing temperature of the first insulating layer is lower than 150 ℃, and the material of the first protective layer is an inorganic material; and/or the presence of a gas in the gas,

the material curing temperature of the second insulating layer is lower than 150 ℃, and the material of the second protective layer is an inorganic material.

Optionally, the materials of the first insulating layer and the second insulating layer each include: acrylic material or silane material.

Optionally, the first protective layer and the second protective layer comprise one or more layers, and the material of each layer comprises: silicon oxide, silicon nitride or silicon oxynitride.

Optionally, the first connection electrode and the second connection electrode each include: a main body conductive layer and a conductive protection layer; the material of the main body conductive layer comprises: copper; the material of the conductive protection layer comprises: a copper-nickel alloy.

Optionally, the back plate further comprises: a buffer layer;

the buffer layer is arranged on one side of the substrate, which is close to the layer where the first connecting electrode and the second connecting electrode are arranged.

In a second aspect, an embodiment of the present disclosure provides a backlight module including the back plate provided as above.

Optionally, the backlight module further includes: a light emitting device and a driving circuit board;

a first electrode of the light emitting device is electrically connected with the first bonding pad through the third via hole, and a second electrode is electrically connected with the second bonding pad through the fourth via hole;

the driving circuit board is electrically connected with the third bonding pad through the fifth via hole.

Optionally, the light emitting device comprises: a micro light emitting diode.

In a third aspect, an embodiment of the present disclosure provides a method for manufacturing a back plate, including:

forming a first connection electrode and a second connection on a substrate;

coating a first insulating material on one side of the layer where the first connecting electrode and the second connecting electrode are located, which is far away from the substrate, and curing the first insulating material to form a first insulating layer; forming a first via hole and a second via hole penetrating through the first insulating layer in the first insulating layer;

forming a first protective layer on one side of the first insulating layer, which faces away from the substrate; forming a first via hole and a second via hole penetrating through the first insulating layer in the first protective layer; orthographic projections of the first via hole and the second via hole on the substrate are at least partially overlapped with orthographic projections of the first connecting electrode and the second connecting electrode on the substrate respectively;

forming a first bonding pad, a second bonding pad and a third bonding pad on one side of the first protective layer, which faces away from the substrate; the first pad is electrically connected to the first connection electrode through the first via hole, and the third pad is electrically connected to the second connection electrode through the second via hole;

coating a second insulating material on one side, away from the substrate, of the layer where the first bonding pad, the second bonding pad and the third bonding pad are located, and curing the second insulating material to form a second insulating layer; forming a third via hole, a fourth via hole and a fifth via hole which penetrate through the second insulating layer in the second insulating layer;

forming a second protective layer on one side of the second insulating layer, which is far away from the substrate; forming a third via hole, a fourth via hole and a fifth via hole which penetrate through the second protective layer in the second protective layer; orthographic projections of the third via hole, the fourth via hole and the fifth via hole on the substrate are respectively at least partially overlapped with orthographic projections of the first bonding pad, the second bonding pad and the third bonding pad on the substrate.

Optionally, the forming a first via and a second via penetrating through the first insulating layer in the first protection layer includes: forming a first via hole and a second via hole penetrating through the first insulating layer in the first protective layer by a screen printing process;

forming a third via hole, a fourth via hole and a fifth via hole which penetrate through the second protection layer in the second protection layer; and forming a third through hole, a fourth through hole and a fifth through hole which penetrate through the second protective layer in the second protective layer through a screen printing process.

Drawings

Fig. 1 is a schematic structural diagram of a back plate according to an embodiment of the present disclosure;

fig. 2 is a schematic structural diagram of a backlight module according to an embodiment of the disclosure;

fig. 3 is a schematic flow chart of a method for manufacturing a back plate according to an embodiment of the present disclosure;

fig. 4a to 4f are schematic structural diagrams corresponding to each step of a method for manufacturing a backplane according to an embodiment of the present disclosure.

Detailed Description

For a better understanding of the technical aspects of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.

Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. Also, the use of the terms "a," "an," or "the" and similar referents do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.

Example one

Fig. 1 is a schematic structural diagram of a back plate according to an embodiment of the present disclosure, as shown in fig. 1, the back plate includes: a substrate 101; a first connection electrode 102 and a second connection electrode 103, both disposed on the substrate 101; a first insulating layer 104 and a first protective layer 105, which are sequentially disposed on the side of the layer where the first connecting electrode 102 and the second connecting electrode 103 are located away from the substrate 101; first and

second via holes

106 and 107 are formed in the first insulating layer 104 and the first protective layer 105, and orthographic projections of the first and

second via holes

106 and 107 on the substrate 101 at least partially overlap with orthographic projections of the first and

second connection electrodes

102 and 103 on the substrate 101, respectively; a first pad 108, a second pad 109 and a third pad 110, which are all disposed on a side of the first protective layer 105 away from the substrate 101, wherein the first pad 108 is electrically connected to the first connection electrode 102 through a first via 106, and the third pad 110 is electrically connected to the second connection electrode 103 through a second via 107; a second insulating layer 111 and a second protective layer 112, which are sequentially arranged on the side of the layer where the first pad 108, the second pad 109 and the third pad 110 are located, which is far away from the substrate 101; third, fourth and

fifth vias

113, 114 and 115 are formed in the second insulating layer 111 and the second protective layer 112, and orthographic projections of the third, fourth and

fifth vias

113, 114 and 115 on the substrate 101 at least partially overlap with orthographic projections of the first, second and

third pads

108, 109 and 110 on the substrate 101, respectively; the third via 113 is configured to electrically connect the first pad 108 with the first electrode of the light emitting device; the fourth via 114 is configured to electrically connect the second pad 109 with the second electrode of the light emitting device; the fifth via hole 115 is configured to electrically connect the third pad 110 with the driving circuit board; the curing temperature of the first insulating layer 104 is lower than 150 ℃, and the first protective layer 105 is made of an inorganic material; and/or the curing temperature of the material of the second insulating layer 111 is lower than 150 degrees celsius, and the material of the second protective layer 112 is an inorganic material.

It should be noted that, in practical applications, the back plate provided in the embodiments of the present disclosure may be connected to a light emitting device and a driving circuit board, and used as a backlight module of a display product to implement brightness adjustment. Specifically, the first pad 108 and the second pad 109 may be connected to a first electrode and a second electrode of the light emitting device, respectively, and the first pad 108 is connected to the first connection electrode 102; the third pad 110 may be connected with an output terminal of the driving circuit board, and the third pad 110 may be connected with the second connection electrode 103. Meanwhile, the first connection electrode 102 and the second connection electrode 103 may be connected to each other by a signal line (not shown), and the second pad 103 may be connected to a ground terminal of the driving circuit board by a signal line (not shown). The driving signal provided by the driving circuit board may be transmitted to the first electrode of the light emitting device through a signal channel composed of the third pad 111, the second connection electrode 103, the first connection electrode 102, and the first pad 108, and a current loop may be formed through the second pad 109 to drive the light emitting device to emit light, and the luminance of the light emitting device may be adjusted by adjusting the driving signal output from the driving circuit board, thereby implementing luminance adjustment.

In the backplane provided by the embodiment of the present invention, the material curing temperature of the first insulating layer 104 is lower than 150 ℃, and the first insulating layer 104 is a low-temperature insulating material, and when the first insulating layer 104 is formed by a low-temperature process, the first connecting electrode 102 and the second connecting electrode 103 covered by the first insulating layer can be prevented from being oxidized. The first protective layer 105 is made of an inorganic material, and can protect the first insulating layer 104 made of a low-temperature insulating material, and the first insulating layer 104 can be prevented from aging and degeneration due to the influence of high temperature when high-temperature processes such as die bonding and the like are performed on the back plate. Similarly, the second insulating layer 111 can prevent the first pad 108, the second pad 109 and the third pad 110 covered by the second insulating layer 111 from being oxidized, the second protective layer 112 can protect the second insulating layer 111 made of a low-temperature insulating material, and the second insulating layer 111 can be prevented from being aged and denatured due to high temperature during subsequent high-temperature processes such as die bonding and the like performed on the backplane. On the other hand, the first insulating layer 104 is formed first, and then the first protective layer 105 is formed, so that the first protective layer 105 is located on the side of the first insulating layer 104 away from the substrate 101, which can prevent the first protective layer 105 from bursting and generating blister deformation. Similarly, the second insulating layer 111 is formed first, and then the second protective layer 112 is formed, so that the second protective layer 112 is located on the side of the second insulating layer 111 away from the substrate 101, which can prevent the second protective layer 112 from bubbling and deforming. It can be seen that the backboard provided by the embodiment of the disclosure has good high temperature resistance, corrosion resistance and bubbling prevention performance, can improve the product reliability, and ensures good display effect of the display product, thereby improving the user experience.

In some embodiments, the materials of the first insulating layer 104 and the second insulating layer 111 each include: acrylic material or silane material.

It should be noted that the second insulating layer 104 and the second insulating layer 111 may be made of the same material, and the material temperature is lower than 150 degrees celsius, and the second insulating layer 104 and the second insulating layer 111 may be formed by a low temperature process, so as to prevent the first connecting electrode 102 and the second connecting electrode 103 covered by the first insulating layer 104 from being oxidized, and prevent the first pad 108, the second pad 109 and the third pad 110 covered by the second insulating layer 111 from being oxidized, thereby improving the product performance and prolonging the service life of the product. Specifically, the materials of the first insulating layer 104 and the second insulating layer 111 may each include: acrylic material or silane material. It is understood that the first insulating layer 104 and the second insulating layer 111 can be made of different materials, and can also be made of other low-temperature insulating materials, which are not listed here.

In some embodiments, the first protective layer 105 and the second protective layer 112 comprise one or more layers of structures, and the materials of each layer of structure comprise: silicon oxide, silicon nitride or silicon oxynitride.

It should be noted that the first protective layer 105 and the second protective layer 112 may have a one-layer structure or a multi-layer structure, and are made of inorganic materials. The first protection layer 105 can protect the first insulation layer 104 made of the low-temperature insulation material, and the first insulation layer 104 can be prevented from aging and degeneration caused by high temperature influence when high-temperature processes such as die bonding and the like are performed on the backboard. Similarly, the second passivation layer 112 can prevent the second insulating layer 111 from aging due to high temperature. Specifically, the material of each layer structure of the first protective layer 105 and the second protective layer 112 may be silicon oxide, silicon nitride, or silicon oxynitride. It is understood that the first protective layer 105 and the second protective layer 112 may be made of other inorganic materials, which are not listed here.

In some embodiments, the first connection electrode 102 and the second connection electrode 103 each include: a main body conductive layer and a conductive protection layer; the material of the main body conductive layer includes: copper; the material of the conductive protective layer includes: copper-nickel alloy

It should be noted that the first connection electrode 102 and the second connection electrode 103 may be made of a composite metal film layer, and include: a main body conductive layer and a conductive protection layer. The material of the main conductive layer may be a metal material with good conductivity such as copper. The material of the conductive protective layer can be molybdenum, or molybdenum alloy, copper-nickel alloy and the like. Preferably, a copper-nickel alloy can be used as a conductive protective layer to prevent the copper electrode from being oxidized, and meanwhile, the copper-nickel alloy can be matched with subsequent solder paste for component assembling. In the preparation process, the first connection electrode 102 and the second connection electrode 103 may be formed by magnetron sputtering or electroplating.

In some embodiments, the back plate further comprises: a buffer layer; the buffer layer is disposed on a side of the substrate 101 adjacent to the layer where the first connection electrode 102 and the second connection electrode 103 are located.

It should be noted that the substrate 101 in the embodiment of the disclosure may be a rigid substrate such as a glass substrate, or may be a flexible substrate such as a polyimide substrate, and in order to relieve the stress between the substrate 101 and the first and

second connection electrodes

102 and 103 thereon, a buffer layer may be formed on the substrate 101 to prevent process fragments from occurring. Specifically, the material of the buffer layer may be an inorganic material including silicon nitride, silicon oxide, silicon oxynitride, or the like. Of course, the material of the buffer layer may also be other inorganic materials, which are not listed here.

Example two

Fig. 2 is a schematic structural diagram of a backlight module according to an embodiment of the disclosure, and as shown in fig. 2, the backlight module includes a back plate according to any of the embodiments, and further includes: a light emitting device 201 and a driving circuit board (not shown in the figure); a first electrode of the light emitting device 201 is electrically connected to the first pad 108 through the third via 113, and a second electrode is electrically connected to the second pad 109 through the fourth via 114; the driving circuit board is electrically connected to the third pad 110 through the fifth via 115.

It should be noted that, in the backlight module provided by the embodiment of the present disclosure, the first pad 108 and the second pad 109 may be connected to the first electrode and the second electrode of the light emitting device 201, respectively, and the first pad 108 is connected to the first connecting electrode 102; the third pad 110 may be connected with an output terminal of the driving circuit board, and the third pad 110 may be connected with the second connection electrode 103. Meanwhile, the first connection electrode 102 and the second connection electrode 103 may be connected to each other by a signal line (not shown), and the second pad 103 may be connected to a ground terminal of the driving circuit board by a signal line (not shown). The driving signal provided by the driving circuit board may be transmitted to the first electrode of the light emitting device 201 through a signal channel composed of the third pad 111, the second connection electrode 103, the first connection electrode 102, and the first pad 108, and a current loop is formed through the second pad 109 to drive the light emitting device 201 to emit light, and the luminance of the light emitting device is adjusted by adjusting the driving signal output by the driving circuit board, thereby achieving luminance adjustment.

In some embodiments, the light emitting device 201 includes: a micro light emitting diode.

It should be noted that the light emitting device 201 in the embodiment of the present disclosure includes a Micro light emitting diode, and specifically, may be a Micro LED or a mini LED. In the embodiment of the present disclosure, the light emitting device 201 is exemplified as a mini LED. In the assembly process of the display module, a large number of prepared mini LEDs can be transferred onto the back plate by adopting a massive transfer technology, the first electrode and the second electrode of the mini LED are respectively connected with the first bonding pad 108 and the second bonding pad 109 in the back plate, and light emission is realized under the driving of a driving signal provided by the driving circuit board, so that the brightness adjustment of a pixel level is realized.

EXAMPLE III

Fig. 3 is a schematic flow chart of a method for manufacturing a back plate according to an embodiment of the present disclosure, and as shown in fig. 3, the method for manufacturing the back plate includes the following steps:

s301, a first connection electrode and a second connection are formed on a substrate.

It should be noted that, as shown in fig. 4a, in order to prevent the occurrence of process fragments, a buffer layer may be coated on the substrate, and the first connection electrode and the second connection electrode may be formed on the buffer layer by magnetron sputtering or electroplating. The first connecting electrode and the second connecting electrode can be made of a single material, such as copper, or can be made of a composite metal film layer, wherein the main conductive material can be copper, and the protective layer can be molybdenum, a molybdenum alloy or a copper-nickel alloy.

S302, coating a first insulating material on the side, away from the substrate, of the layer where the first connecting electrode and the second connecting electrode are located, curing the first insulating material to form a first insulating layer, and forming a first via hole and a second via hole which penetrate through the first insulating layer in the first insulating layer.

It should be noted that, as shown in fig. 4b, a low-temperature process may be used to apply the first insulating material to the side of the layer where the first connection electrode and the second connection electrode are located, which faces away from the substrate, wherein the curing temperature of the first insulating material may be less than 150 ℃. And carrying out curing treatment on the first insulating material so that the first insulating material is cured to form a first insulating layer. Therefore, the first connecting electrode and the second connecting electrode covered by the first insulating layer can be prevented from being oxidized, so that the product performance is improved, and the service life of the product is prolonged. In practical applications, the material of the first insulating layer may be an acrylic material or a silane material. The first and second via holes may be formed in the first insulating layer by a photolithography process to expose the first and second connection electrodes.

S303, forming a first protective layer on one side of the first insulating layer, which is far away from the substrate, and forming a first via hole and a second via hole which penetrate through the first insulating layer in the first protective layer; orthographic projections of the first via hole and the second via hole on the substrate are at least partially overlapped with orthographic projections of the first connecting electrode and the second connecting electrode on the substrate respectively.

Note that as shown in fig. 4c, an inorganic material is coated on a side of the first insulating layer facing away from the substrate to form a first protective layer. The first protective layer can protect a first insulating layer made of a low-temperature insulating material, and the first insulating layer can be prevented from being aged and denatured due to the influence of high temperature during subsequent high-temperature processes such as die bonding and the like on the back plate. Specifically, the material of each layer structure in the first protective layer may be silicon oxide, silicon nitride, silicon oxynitride, or the like. First and second via holes are formed in the first protective layer at the same positions as the first and second via holes in the first insulating layer to expose the first and second connection electrodes.

S304, forming a first bonding pad, a second bonding pad and a third bonding pad on one side of the first protective layer, which is far away from the substrate; the first pad is electrically connected to the first connection electrode through the first via hole, and the third pad is electrically connected to the second connection electrode through the second via hole.

It should be noted that, as shown in fig. 4d, the same process as that of the first and second connection electrodes 103 may be adopted to form a first pad, a second pad and a third pad on the side of the first protection layer away from the substrate, and the first pad is connected to the first connection electrode through the first via, and the third pad is connected to the second connection electrode through the second via. The implementation principle is the same as that of the first connection electrode and the second connection electrode, and is not described herein again.

S305, coating a second insulating material on the side, away from the substrate, of the layer where the first pad, the second pad and the third pad are located, curing the second insulating material to form a second insulating layer, and forming a third via hole, a fourth via hole and a fifth via hole which penetrate through the second insulating layer in the second insulating layer.

It should be noted that, as shown in fig. 4e, a second insulating layer may be formed on a side of the layer where the first pad, the second pad, and the third pad are located, which side is away from the substrate, by using the same process as the first insulating layer. The implementation principle is the same as that of the first insulating layer, and is not described herein again. The third via, the fourth via, and the fifth via may be formed in the second insulating layer by a photolithography process to expose the first pad, the second pad, and the third pad.

S306, forming a second protective layer on one side, away from the substrate, of the second insulating layer, and forming a third via hole, a fourth via hole and a fifth via hole which penetrate through the second protective layer in the second protective layer; orthographic projections of the third via hole, the fourth via hole and the fifth via hole on the substrate are respectively at least partially overlapped with orthographic projections of the first bonding pad, the second bonding pad and the third bonding pad on the substrate.

Note that, as shown in fig. 4f, a second protective layer may be formed on a side of the second insulating layer away from the substrate by using the same process as the first protective layer. The implementation principle is the same as that of the first protection layer, and is not described herein again. And forming a third via hole, a fourth via hole and a fifth via hole in the second protective layer at the same positions as the third via hole, the fourth via hole and the fifth via hole in the second insulating layer so as to leak the first pad, the second pad and the third pad, thereby enabling the backplane to be connected with the light emitting device and the driving circuit board.

In some embodiments, the step S303 of forming a first via and a second via penetrating through the first insulating layer in the first protection layer includes: forming a first through hole and a second through hole penetrating through the first insulating layer in the first protective layer through a screen printing process; step S306, forming a third via hole, a fourth via hole and a fifth via hole in the second protective layer, including; and forming a third through hole, a fourth through hole and a fifth through hole which penetrate through the second protective layer in the second protective layer through a screen printing process.

It should be noted that, in the embodiment of the present disclosure, each via hole formed in the first protection layer and the second protection layer is formed by using a screen printing process, instead of a dry etching process in a conventional process, so that a burr generated on a surface of the first insulation layer covered by the first protection layer and a surface of the second insulation layer covered by the second protection layer in a preparation process can be prevented, thereby improving product reliability, and reducing equipment investment, thereby reducing product preparation cost.

It is to be understood that the above embodiments are merely exemplary embodiments that are employed to illustrate the principles of the present disclosure, and that the present disclosure is not limited thereto. It will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the disclosure, and these are to be considered as the scope of the disclosure.

Claims

1. A backing sheet, comprising:

a substrate;

2. The backsheet according to claim 1, wherein the materials of the first and second insulating layers each comprise: acrylic material or silane material.

3. The backsheet according to claim 1, wherein the first protective layer and the second protective layer comprise one or more layers of structures, and the material of each layer of structures comprises: silicon oxide, silicon nitride or silicon oxynitride.

4. The back sheet of claim 1, wherein the first connection electrode and the second connection electrode each comprise a body conductive layer and a conductive protective layer; the material of the main body conductive layer comprises: copper; the material of the conductive protection layer comprises: a copper-nickel alloy.

5. The backsheet according to claim 1, further comprising: a buffer layer;

6. A backlight module comprising the back sheet according to any one of claims 1 to 5.

7. The backlight module according to claim 6, further comprising: a light emitting device and a driving circuit board;

8. A backlight module according to claim 7, wherein the light emitting device comprises: a micro light emitting diode.

9. A method of making a backsheet, comprising:

forming a first connection electrode and a second connection on a substrate;

10. The method for preparing a backplane according to claim 9, wherein the forming of the first and second vias in the first protective layer through the first insulating layer comprises: forming a first via hole and a second via hole penetrating through the first insulating layer in the first protective layer by a screen printing process;