CN112259663A - Packaging process of energy-saving and environment-friendly LED lamp - Google Patents
Packaging process of energy-saving and environment-friendly LED lamp Download PDFInfo
- Publication number
- CN112259663A CN112259663A CN202011142308.1A CN202011142308A CN112259663A CN 112259663 A CN112259663 A CN 112259663A CN 202011142308 A CN202011142308 A CN 202011142308A CN 112259663 A CN112259663 A CN 112259663A
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- CN
- China
- Prior art keywords
- chip
- saving
- energy
- led lamp
- packaging process
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012858 packaging process Methods 0.000 title claims abstract description 19
- 239000003292 glue Substances 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000003756 stirring Methods 0.000 claims abstract description 9
- 238000007689 inspection Methods 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 7
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 6
- 231100000719 pollutant Toxicity 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 230000007480 spreading Effects 0.000 claims abstract description 6
- 238000003892 spreading Methods 0.000 claims abstract description 6
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- 239000010419 fine particle Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 7
- 230000008023 solidification Effects 0.000 claims description 7
- 239000004593 Epoxy Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 230000000704 physical effect Effects 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 2
- 239000000356 contaminant Substances 0.000 claims 2
- 238000012536 packaging technology Methods 0.000 claims 2
- 230000006866 deterioration Effects 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 8
- 238000005476 soldering Methods 0.000 abstract 1
- 239000000084 colloidal system Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 3
- 244000025254 Cannabis sativa Species 0.000 description 2
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 description 2
- 235000012765 Cannabis sativa ssp. sativa var. spontanea Nutrition 0.000 description 2
- 235000009120 camo Nutrition 0.000 description 2
- 235000005607 chanvre indien Nutrition 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011487 hemp Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a packaging process of an energy-saving environment-friendly LED lamp, which comprises the following steps: s1: cleaning; s2: chip inspection; s3: crystal expansion; s4: stirring; s5: dispensing; s6: solidifying the crystal; s7: short baking; s8: welding wires; s9: front measurement; s10: sealing; s11: long baking; s12: post-measurement; s13: and (6) packaging. According to the invention, through cleaning before dispensing and before bonding wires, invisible pollutants cannot exist on the substrate, the spreading of glue and the sticking of a chip are facilitated, and meanwhile, the residual of some fine particles introduced in the curing process is avoided, so that the situations of poor welding strength and poor quality of pseudo-soldering or welding-bonding are avoided, the glue is completely cured by long-time baking, and in the later use, the situation of continuous curing cannot occur, so that the cured object is deformed, the bonding wires on the surface of the chip are broken, and the phenomenon of low light-emitting efficiency cannot occur.
Description
Technical Field
The invention relates to the technical field of LED lamps, in particular to a packaging process of an energy-saving and environment-friendly LED lamp.
Background
The LED and the light emitting diode are solid semiconductor devices, can directly convert electricity into light, and the practicability and commercialization of high-performance LEDs are realized, so that the lighting technology faces a new revolution.
Disclosure of Invention
The invention aims to provide a packaging process of an energy-saving and environment-friendly LED lamp, which aims to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: the packaging process of the energy-saving and environment-friendly LED lamp comprises the following steps:
s1: cleaning; s2: chip inspection; s3: crystal expansion; s4: stirring; s5: dispensing; s6: solidifying the crystal; s7: short baking; s8: welding wires; s9: front measurement; s10: sealing; s11: long baking; s12: post-measurement; s13: and (6) packaging.
Preferably, the step of S1: cleaning, plasma cleaning equipment takes place chemistry or physical action through between the plasma that the ionization formed and the material surface, the completion is to the getting rid of surface contamination thing and oxide layer, thereby improve the surface activity of device, adopt plasma surface cleaning equipment to get rid of the oxide and the particle contamination on device surface, in order to promote product reliability, improve product quality, cleaning work needs to go on before the point is glued with the bonding wire simultaneously, if there is the invisible pollutant of naked eye on the base plate, be unfavorable for spreading of glue and pasting of chip, some tiny granules of avoiding introducing simultaneously at the in-process of solidification remain, thereby avoid welded intensity variation, the rosin joint appears or the poor condition of welding quality.
Preferably, the step of S2: and (4) chip inspection, which is to inspect through a microscope to determine whether the surface of the material has mechanical damage and pits, whether the size of the chip and the size of the electrode meet the process requirements, and whether the electrode pattern is complete.
Preferably, the step of S3: and (3) crystal expansion, namely separating the arranged dense and hemp wafers a little for crystal solidification, wherein the separation distance is 0.4-0.7 mm.
Preferably, the step of S4: stirring, heating and stirring the silver colloid through the reaction kettle, and mixing and uniformly mixing the silver colloid.
Preferably, the step of S5: and dispensing, namely dispensing the uniformly mixed curing glue on the top of the support and positioning the curing glue at the mounting position of the wafer.
Preferably, the step of S6: and (5) fixing the crystal, wherein the chip after crystal expansion corresponds to the dispensing position through tweezers under a microscope.
Preferably, the step of S7: and short baking, namely baking the chip after die bonding in an oven for 1.5-2.3h at the baking temperature of 200-230 ℃, wherein the oven is not opened during the product baking period.
Preferably, the step of S8: and (4) bonding wires, wherein gold wires are welded between the electrodes and the pins of the LED chip by using a wire bonding machine.
Preferably, the step of S9: and forward measurement, connecting the electrode after the wire is welded with power supply equipment, and observing whether the LED chip can work or not.
Preferably, the step of S10: and (3) sealing, namely injecting liquid epoxy into the LED forming die cavity, then inserting the LED support subjected to pressure welding into the LED forming die cavity, putting the LED support into an oven, curing the epoxy, and then removing the LED from the die cavity to form the LED.
Preferably, the step of S11: and (3) long baking to completely cure the glue, so that during later use, the condition of continuous curing can not occur, the cured substance is deformed, and the bonding wires on the surface of the chip are broken, and therefore, the phenomenon of low light emitting efficiency can not occur, the long baking time is 20-30 minutes, and the long baking temperature is 170-200 ℃.
Preferably, the step of S12: and (4) post-testing, and connecting the electrode subjected to wire welding with power supply equipment again to ensure that the LED chip can work.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, through cleaning before dispensing and before bonding wires, pollutants invisible to naked eyes do not exist on the substrate, glue spreading and chip bonding are facilitated, residual of some fine particles introduced in the curing process is avoided, the problems of poor welding strength, poor insufficient welding quality and poor welding quality are avoided, long baking is carried out, the glue is completely cured, and in later use, the phenomenon that the cured object is deformed to break the bonding wires on the surface of the chip due to the continuous curing condition is avoided, so that the phenomenon of low light emitting efficiency is avoided, and the problems that the durability of the packaged LED lamp is poor and the packaged LED lamp is easy to damage due to the defects of poor cleaning effect and poor glue fixing effect in the packaging process of the conventional LED lamp are solved.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The packaging process of the energy-saving and environment-friendly LED lamp comprises the following steps:
s1: cleaning; s2: chip inspection; s3: crystal expansion; s4: stirring; s5: dispensing; s6: solidifying the crystal; s7: short baking; s8: welding wires; s9: front measurement; s10: sealing; s11: long baking; s12: post-measurement; s13: and (6) packaging.
Through rinse before the point is glued and before the bonding wire, make can not have the invisible pollutant of naked eye on the base plate, do benefit to the spreading of glue and pasting of chip, some tiny granules of avoiding introducing in the in-process of solidification remain, thereby avoid welded intensity variation, the poor condition of rosin joint or welding quality appears, long roast, make glue solidify completely, in later use, the condition of continuation solidification can not appear, lead to the cured substance to warp, the bonding wire on chip surface is broken, thereby the phenomenon that light-emitting efficiency is low can not take place, it is poor to have the cleaning performance at the packaging in-process to have solved current LED lamp, and the weak point of solid glue effect is poor, lead to the LED lamp durability after the encapsulation poor, the problem of easy damage.
S1: cleaning, plasma cleaning equipment takes place chemistry or physical action through between the plasma that the ionization formed and the material surface, the completion is to the getting rid of surface contamination thing and oxide layer, thereby improve the surface activity of device, adopt plasma surface cleaning equipment to get rid of the oxide and the particle contamination on device surface, in order to promote product reliability, improve product quality, cleaning work needs to go on before the point is glued with the bonding wire simultaneously, if there is the invisible pollutant of naked eye on the base plate, be unfavorable for spreading of glue and pasting of chip, some tiny granules of avoiding introducing simultaneously at the in-process of solidification remain, thereby avoid welded intensity variation, the rosin joint appears or the poor condition of welding quality.
S2: and (4) chip inspection, which is to inspect through a microscope to determine whether the surface of the material has mechanical damage and pits, whether the size of the chip and the size of the electrode meet the process requirements, and whether the electrode pattern is complete.
S3: and (3) crystal expansion, namely separating the arranged dense and hemp wafers a little for crystal solidification, wherein the separation distance is 0.4-0.7 mm.
S4: stirring, heating and stirring the silver colloid through the reaction kettle, and mixing and uniformly mixing the silver colloid.
S5: and dispensing, namely dispensing the uniformly mixed curing glue on the top of the support and positioning the curing glue at the mounting position of the wafer.
S6: and (5) fixing the crystal, wherein the chip after crystal expansion corresponds to the dispensing position through tweezers under a microscope.
S7: and short baking, namely baking the chip after die bonding in an oven for 1.5-2.3h at the baking temperature of 200-230 ℃, wherein the oven is not opened during the product baking period.
S8: and (4) bonding wires, wherein gold wires are welded between the electrodes and the pins of the LED chip by using a wire bonding machine.
S9: and forward measurement, connecting the electrode after the wire is welded with power supply equipment, and observing whether the LED chip can work or not.
S10: and (3) sealing, namely injecting liquid epoxy into the LED forming die cavity, then inserting the LED support subjected to pressure welding into the LED forming die cavity, putting the LED support into an oven, curing the epoxy, and then removing the LED from the die cavity to form the LED.
S11: and (3) long baking to completely cure the glue, so that during later use, the condition of continuous curing can not occur, the cured substance is deformed, and the bonding wires on the surface of the chip are broken, and therefore, the phenomenon of low light emitting efficiency can not occur, the long baking time is 20-30 minutes, and the long baking temperature is 170-200 ℃.
S12: and (4) post-testing, and connecting the electrode subjected to wire welding with power supply equipment again to ensure that the LED chip can work.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (13)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011142308.1A CN112259663A (en) | 2020-10-23 | 2020-10-23 | Packaging process of energy-saving and environment-friendly LED lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011142308.1A CN112259663A (en) | 2020-10-23 | 2020-10-23 | Packaging process of energy-saving and environment-friendly LED lamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112259663A true CN112259663A (en) | 2021-01-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011142308.1A Pending CN112259663A (en) | 2020-10-23 | 2020-10-23 | Packaging process of energy-saving and environment-friendly LED lamp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112259663A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113329564A (en) * | 2021-04-10 | 2021-08-31 | 山东永而佳电子科技有限公司 | Light-emitting diode production process and surface roughening processing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022318A (en) * | 2012-12-14 | 2013-04-03 | 深圳市九洲光电科技有限公司 | LED display screen package process based on COB (chip on board) technology and LED display screen |
| US20130214386A1 (en) * | 2010-11-26 | 2013-08-22 | Tianshui Huatian Technology Co., Ltd. | Sip system-integration ic chip package and manufacturing method thereof |
| CN104253204A (en) * | 2014-08-28 | 2014-12-31 | 江西量一光电科技有限公司 | LED (light emitting diode) wafer encapsulation method |
| CN105374921A (en) * | 2015-08-28 | 2016-03-02 | 安徽福恩光电科技有限公司 | LED lamp bead encapsulation technology |
| CN107634135A (en) * | 2017-08-17 | 2018-01-26 | 芜湖晶鑫光电照明有限公司 | A kind of LED lamp panel packaging technology flow |
| CN110290650A (en) * | 2019-05-14 | 2019-09-27 | 广州视源电子科技股份有限公司 | LED lamp panel and packaging method thereof |
-
2020
- 2020-10-23 CN CN202011142308.1A patent/CN112259663A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130214386A1 (en) * | 2010-11-26 | 2013-08-22 | Tianshui Huatian Technology Co., Ltd. | Sip system-integration ic chip package and manufacturing method thereof |
| CN103022318A (en) * | 2012-12-14 | 2013-04-03 | 深圳市九洲光电科技有限公司 | LED display screen package process based on COB (chip on board) technology and LED display screen |
| CN104253204A (en) * | 2014-08-28 | 2014-12-31 | 江西量一光电科技有限公司 | LED (light emitting diode) wafer encapsulation method |
| CN105374921A (en) * | 2015-08-28 | 2016-03-02 | 安徽福恩光电科技有限公司 | LED lamp bead encapsulation technology |
| CN107634135A (en) * | 2017-08-17 | 2018-01-26 | 芜湖晶鑫光电照明有限公司 | A kind of LED lamp panel packaging technology flow |
| CN110290650A (en) * | 2019-05-14 | 2019-09-27 | 广州视源电子科技股份有限公司 | LED lamp panel and packaging method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113329564A (en) * | 2021-04-10 | 2021-08-31 | 山东永而佳电子科技有限公司 | Light-emitting diode production process and surface roughening processing device |
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| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20210122 |