CN112242479A - Thermoelectric device with embedded hot-end metal electrode - Google Patents
Thermoelectric device with embedded hot-end metal electrode Download PDFInfo
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- CN112242479A CN112242479A CN202011282123.0A CN202011282123A CN112242479A CN 112242479 A CN112242479 A CN 112242479A CN 202011282123 A CN202011282123 A CN 202011282123A CN 112242479 A CN112242479 A CN 112242479A
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- 239000002184 metal Substances 0.000 title claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 102
- 239000000919 ceramic Substances 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910002899 Bi2Te3 Inorganic materials 0.000 claims description 3
- 229910018985 CoSb3 Inorganic materials 0.000 claims description 3
- 229910002665 PbTe Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
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Abstract
The invention relates to the field of thermoelectric devices, in particular to a thermoelectric device with an embedded hot-end metal electrode. The thermoelectric device includes: ceramic layer, metal electrode layer, contact layer and thermoelectric arm. The ceramic layer is provided with a groove, and the metal electrode layer, the contact layer and part of the thermoelectric arms are embedded into the groove. The invention reduces the damage possibility of the metal electrode layer, particularly the hot-end metal electrode layer, in cold and hot alternation, ensures long-time reliable thermal contact and electric contact among the ceramic layer, the metal electrode layer and the thermoelectric arm, and thereby prolongs the service life of the thermoelectric device.
Description
Technical Field
The invention relates to the field of thermoelectric devices, in particular to a thermoelectric device with an embedded hot-end metal electrode.
Background
The thermoelectric device is a device which directly converts the temperature difference of the cold end and the hot end of the thermoelectric device into electric energy by utilizing the Seebeck effect of a thermoelectric material.
The existing thermoelectric device consists of: a hot-side ceramic layer (planar), a hot-side metal electrode layer (planar, which may not be used when ohmic contact is formed between the thermoelectric legs and the hot-side metal electrode layer, or an n-or p-type thermoelectric leg, a cold-side contact layer (planar), a cold-side metal electrode layer (planar), and a cold-side ceramic layer (planar).
All component layers on the thermoelectric element structure are only in close contact with adjacent layers and are not connected with other layer spans (for example, a cold contact layer is only connected with a lower cold-side metal electrode layer and an upper n or p thermoelectric arm, but not connected with other layer spans).
The thermoelectric element comprises a plurality of n-type and p-type thermoelectric arms, one n-type and one p-type thermoelectric arm, and a pair of pi-type thermocouples are connected through metal electrodes. A thermoelectric device is usually formed by several pairs of pi-type thermocouples connected in series with each other.
The thermoelectric device has severe working conditions, and whether the thermoelectric device can stably work for a long time is a key. The cold end of the thermoelectric device is in a low-temperature state, the deformation is small under the normal condition, and the damage can not happen generally, so that the influence on the service life of the device is small. The hot end of the thermoelectric device is in a high-temperature state, the hot end metal electrode layer in the device is usually large in thermal expansion coefficient and low in yield strength, and stress concentration is also usually generated on the hot end metal electrode. Thus, the hot-side metal electrode layer is the most vulnerable site in the device.
In the traditional structural design of the thermoelectric device, the hot end and the cold end both adopt plane type designs, namely, a flat metal electrode layer is covered on the inner side surface of a flat ceramic plate. With such a design, the hot-side metal electrode in contact with the thermoelectric arm needs to perform both the longitudinal heat conduction function and the transverse electric conduction function to form a current loop with the adjacent thermoelectric arm. In the event of a failure of the metal electrode, such as a typical longitudinal tear or fracture, electrical and thermal conduction is affected simultaneously until a current interruption is established.
Disclosure of Invention
The invention aims to: the thermoelectric device with the embedded hot-end metal electrode is provided, aiming at the problem that in the prior art, the metal electrode is easy to break, so that the electric conduction and the heat conduction are affected at the same time.
In order to achieve the purpose, the invention adopts the technical scheme that:
a thermoelectric device with an embedded hot-end metal electrode comprises a hot-end ceramic layer and a hot-end metal electrode layer, wherein the hot-end ceramic layer is provided with a hot-end groove; the hot end metal electrode layer is partially or completely embedded into the hot end groove.
It can be understood that, in the embedded structure, the hot-end metal electrode layer is limited in the hot-end ceramic layer, and the hot-end ceramic layer basically cannot deform at high temperature, so that even if the hot-end metal electrode layer expands in the heating process, the hot-end metal electrode layer is also bound by the hot-end groove, and the possibility of fracture caused by expansion is greatly reduced. And even if slight breakage occurs, it is easily re-welded in subsequent heating.
Furthermore, the scheme also comprises a hot end contact layer, wherein the hot end metal electrode layer is completely embedded into the hot end groove, the hot end contact layer is in contact with or connected with the hot end metal electrode layer, and the hot end contact layer is partially or completely embedded into the hot end groove.
It will be appreciated that when a hot-side contact layer is included, the hot-side contact layer is embedded in the hot-side recess together with the hot-side metal electrode layer, and the hot-side contact layer is laid on the side of the hot-side metal electrode layer remote from the hot-side ceramic layer. The embedding mode is convenient for further limiting the hot end metal electrode layer (at the moment, the hot end metal electrode layer is completely surrounded by the hot end groove wall and the hot end contact layer), and longitudinal deformation of the hot end metal electrode layer after being heated is prevented. Meanwhile, the hot end contact layer is convenient to fix, and good contact between the hot end contact layer and the hot end metal electrode layer is ensured.
Furthermore, the scheme also comprises a thermoelectric arm, and one end of the thermoelectric arm is embedded into the hot end groove.
It can be understood that the embedding manner increases the contact area of the thermoelectric arms and the hot-side contact layer or the hot-side metal electrode layer (because the sides of the thermoelectric arms of the embedded part are in contact with the hot-side metal electrode layer or the hot-side contact layer after one end of the thermoelectric arms is embedded into the hot-side groove), and the sensitivity of the thermoelectric element is increased.
As a preferred scheme of the present invention, the hot end ceramic layer is a rectangular parallelepiped structure with the hot end groove, or an annular structure with the hot end groove.
It can be understood that the structure of the two hot-end ceramic layers can embed the hot-end electrode layer and the hot-end contact layer and embed one end of the electric heating arm, and simultaneously meets the shape requirement of the thermoelectric element on the market.
Furthermore, the hot end groove consists of two connected boss-shaped grooves.
It will be appreciated that the design of the hot side ceramic layer shape and the hot side recess shape facilitates better embedding of the hot side metal electrode layer, the hot side contact layer and the one end of the hot side arm, while facilitating the separation of the electrical and thermal conduction functions to different locations of the hot side metal electrode layer (thermal conduction is achieved primarily by the electrode layer in the convex upper half of the convex hot side recess and electrical conduction is achieved primarily by the electrode layer in the convex lower half of the convex hot side recess because the electrode layer in the convex upper half is closer to the heat source and the electrode layer in the convex lower half has a larger area of connection with the other hot side arm).
In a preferred embodiment of the present invention, the hot-end ceramic layer is made of AlN, SiC or Al2O3、Si3N4Is made of one or more materials.
It can be understood that the hot-end ceramic layer made of the above materials has the advantages of excellent thermal conductivity, high-temperature insulation, high-temperature resistance and the like.
In a preferred embodiment of the present invention, the thermoelectric material of the thermoelectric legs is Bi2Te3A base, a half-Heusler base, a PbTe base, a MgAgSb base, a SiGe base, a Mg base3Sb2Radical and CoSb3One or more of the base groups.
It can be understood that the thermoelectric material has a large Seebeck coefficient and a low thermal conductivity, and high performance of the thermoelectric material is ensured.
In a preferred embodiment of the present invention, the hot-end metal electrode layer is made of one or more materials selected from Cu, Au, and Ag.
It can be understood that the electrode layer made of Cu, Au or Ag material has better conductivity and ductility, and reduces the possibility of tearing and breaking of the electrode layer during repeated heating.
In a preferred embodiment of the present invention, the hot-side contact layer is made of one or two materials selected from Ni and Fe.
It is understood that the hot side contact layer made of the above materials has a low thermal expansion coefficient, and the thermal treatment in a specific temperature range stabilizes the thermal expansion coefficient and has a good high temperature resistance.
As a preferred scheme of the present invention, the cold end ceramic layer may be provided with a cold end groove, the cold end metal electrode layer and the cold end contact layer are embedded in the cold end groove, and the other end of the thermoelectric arm is embedded in the cold end groove.
Preferably, the cold end grooves are of a size and shape consistent with the hot end grooves.
It can be understood that the cold side of the thermoelectric element can also adopt an embedded design with the same hot side, thereby further increasing the performance and the service life of the cold side of the thermoelectric element.
Due to the adoption of the technical scheme, the invention has the beneficial effects that:
(1) this scheme designs a thermoelectric device with embedded hot junction metal electrode, under this kind of hot junction structural design, has increased the area of laying of metal electrode layer, and stress concentration value greatly reduces, has reduced the destroyed possibility of hot junction metal electrode layer.
(2) In the scheme, the hot end metal electrode layer is limited in the hot end groove of the hot end ceramic plate, so that even if micro cracks appear on the hot end metal electrode material embedded in the hot end ceramic plate, the hot end metal electrode layer is easily welded again in the subsequent repeated heating process, and the possibility of tearing and breaking is greatly reduced.
(3) The scheme realizes that the electric conduction function and the heat conduction function are separated to different positions of the hot-end metal electrode layer. Even if the hot end metal electrode layer in the shape of the hot end groove cylinder is torn, the electric conduction cannot be influenced, and the device can still work normally.
Drawings
Fig. 1 is a schematic view of a thermoelectric device having an embedded hot-side metal electrode in example 1;
FIG. 2 is a schematic top view of a hot-end ceramic layer with a hot-end groove in example 1;
FIG. 3 is a schematic front view of a hot-end ceramic layer with a hot-end groove according to example 1;
FIG. 4 is a schematic side view of a hot-end ceramic layer with a hot-end groove in example 1;
FIG. 5 is a schematic top view of the hot-end metal electrode sheet in example 1;
FIG. 6 is a schematic front view of the hot-end metal electrode sheet in example 1;
FIG. 7 is a schematic view of a thermoelectric device having an embedded hot-side metal electrode in example 2;
the labels in the figure are: the structure comprises a 1-hot end ceramic layer, a 2-hot end metal electrode layer, a 3-p type thermoelectric arm, a 4-cold end contact layer, a 5-cold end metal electrode layer, a 6-cold end ceramic layer, a 7-n type thermoelectric arm and an 8-hot end contact layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, the term "thermoelectric legs" refers to both n-type thermoelectric legs and p-type thermoelectric legs together or either of them.
Example 1
Please refer to fig. 1-6:
the invention designs a thermoelectric device with an embedded hot-end metal electrode, which comprises: the hot end ceramic layer comprises a hot end ceramic layer 1, a hot end metal electrode layer 2, a hot end contact layer 8, a p-type thermoelectric arm 3, an n-type thermoelectric arm 7, a cold end contact layer 4, a cold end metal electrode layer 5, a cold end ceramic layer 6 and a hot end groove.
The hot end ceramic layer 1 is in a cuboid block shape, and two hot end grooves are formed in one surface of the hot end ceramic layer at intervals; the hot end groove is composed of two connected boss-shaped grooves. The hot end groove shape can be understood in particular as two parts, namely a lower cuboid shape and an upper two cylindrical shape.
One side of the hot end metal electrode layer 2 is tightly attached to the inner wall of the hot end groove, and the other side of the hot end metal electrode layer is tightly attached to one side of the hot end contact layer 8. The other side of the hot end contact layer 8 is tightly attached to one end of the thermoelectric arm, and the hot end metal electrode layer 2, the hot end contact layer 8 and one end of the thermoelectric arm are tightly embedded into the hot end groove layer by layer.
The other end of above-mentioned thermoelectric arm is connected with the laminating of the one side of cold junction contact layer 4, the another side of cold junction contact layer 4 is connected with the laminating of the one side of cold junction metal electrode layer 5, the another side of cold junction metal electrode layer 5 with the laminating of cold junction ceramic layer 6 is connected.
The thermoelectric arms comprise p-type thermoelectric arms 3 and n-type thermoelectric arms 7, wherein the n-type thermoelectric arms 7 and the p-type thermoelectric arms 3 are horizontally staggered and connected in series through the hot-end metal electrode layer 2 and the cold-end metal electrode layer 5.
In the present embodiment, the size of the hot-end ceramic layer 1 is 16.8 mm by 5 mm by 1.8 mm; the size of the cuboid-shaped part below the hot end groove is 7.6 mm 4 mm 0.3 mm; the sizes of the two upper cylinders are phi 1.5 mm and phi 0.6 mm; the thickness of the hot-end metal electrode plate 2 is 0.3 mm; the thickness of the hot end contact layer 8 is 0.2 mm; the size of the n-type thermoelectric arm 7 and the size of the p-type thermoelectric arm 3 are both phi 1 mm and phi 2 mm; the depth of one end of the thermoelectric arm embedded into the hot end groove is 0.4 mm; the thickness of the cold end contact layer 4 is 0.2 mm; the thickness of the cold end metal electrode plate 5 is 0.3 mm; the cold end ceramic layer 6 has dimensions of 16.8 mm 2 mm 0.9 mm.
It will be appreciated that the above dimensions are only given as an example of a preferred embodiment. In other dimension designs of the scheme, the depth of the cylindrical part of the hot-end groove is required to be larger than the sum of the thicknesses of the hot-end metal electrode layer 2 and the hot-end contact layer 8, and one end part of the thermoelectric arm can be embedded into the cylindrical part of the hot-end groove. The lateral dimension of the cylindrical part of the hot end groove needs to ensure that the side surface of the embedded part of the thermoelectric arm can be tightly contacted with the hot end contact layer 8 after the hot end of the thermoelectric arm is embedded. The transverse size of the cuboid-shaped part with the hot-end groove only needs to be capable of enabling one end of the n-type thermoelectric arm and one end of the p-type thermoelectric arm to be embedded simultaneously (the condition of series connection is met), and the longitudinal size of the cuboid-shaped part is not limited.
In a preferred embodiment, the hot-end ceramic layer 1 is AlN, SiC or Al2O3、Si3N4One or more of them.
In a preferred embodiment, the thermoelectric material of the thermoelectric arm is Bi2Te3A base, a half-Heusler base, a PbTe base, a MgAgSb base, a SiGe base, a Mg base3Sb2Radical or CoSb3One or more of the base groups.
In a preferred embodiment, the hot-side metal electrode layer 2 is made of one or more materials selected from Cu, Au, and Ag.
In a preferred embodiment, the hot-end contact layer is made of one or two of Ni and Fe.
Example 2
The main difference between this embodiment and embodiment 1 is that the present embodiment provides a thermoelectric device with embedded hot-side metal electrodes, in which the hot-side ceramic layer 1 and the cold-side ceramic layer 6 are annular. Specifically, as shown in fig. 7:
in this embodiment, hot junction ceramic layer 1 and cold junction ceramic layer 6 are two coaxial ring bodies, cold junction ceramic layer 6 surrounds hot junction ceramic layer 1.
Three hot end grooves are arranged on the outer wall of the hot end ceramic layer 1 at intervals; one side of the hot end metal electrode layer 2 is tightly attached to the inner wall of the hot end groove, and the other side of the hot end metal electrode layer is tightly attached to one side of the hot end contact layer 8. The other side of the hot end contact layer 8 is tightly attached to one end of the thermoelectric arm, and the hot end metal electrode layer 2, the hot end contact layer 8 and one end of the thermoelectric arm are tightly embedded into the hot end groove layer by layer.
The other end of above-mentioned thermoelectric arm is connected with the laminating of the one side of cold junction contact layer 4, the another side of cold junction contact layer 4 is connected with the laminating of the one side of cold junction metal electrode layer 5, the another side of cold junction metal electrode layer 5 with the inner wall laminating of cold junction ceramic layer 6 is connected.
It will be appreciated that the present embodiment provides a thermoelectric device having an embedded hot side metal electrode in another configuration.
Example 3
The main difference between this embodiment and embodiment 1 or embodiment 2 described above is that this embodiment provides a thermoelectric device with an embedded hot-side metal electrode without a hot-side contact layer.
At this time, ohmic contact is formed between the thermoelectric arm and the hot-side metal electrode layer 2, that is, one end of the thermoelectric arm is directly contacted with the hot-side metal electrode layer 2.
It can be understood that, in this embodiment, only the size of each portion of the hot-side groove needs to be changed simply, so that the metal electrode layer 2 and one end of the thermoelectric arm can be embedded into the hot-side groove, and the side surface of the embedded portion of the thermoelectric arm can be in close contact with the hot-side metal electrode layer 2. Other structures, dimensions and materials may be the same as those of the above embodiments, and are not described herein.
Example 4
This embodiment is different from embodiment 1 or embodiment 2 or embodiment 3 described above in that this embodiment provides a thermoelectric device having both end metal electrodes embedded.
In a specific difference, in this embodiment, a cold end groove is formed in one surface of the cold end ceramic layer 6; the cold end metal electrode layer 5 and the cold end contact layer 4 are embedded into the cold end groove; the other end of the thermoelectric arm is embedded into the cold end groove.
It can be understood that the cold end of the thermoelectric element of this embodiment adopts the same embedding manner as the hot end, and the designed structure, size, and material may be the same as any of the above embodiments, which is not described herein again.
It is understood that the foregoing embodiments illustrate thermoelectric devices having four and six thermoelectric legs embedded hot side metal electrodes for better illustration of the present solution. In practice, however, the present solution may include several n-type or p-type thermoelectric legs connected in series, which is not limited by the embodiment.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A thermoelectric device with an embedded hot end metal electrode comprises a hot end ceramic layer and a hot end metal electrode layer, and is characterized in that the hot end ceramic layer is provided with a hot end groove; the hot end metal electrode layer is partially or completely embedded into the hot end groove.
2. The thermoelectric device with the embedded hot-side metal electrode as claimed in claim 1, further comprising a hot-side contact layer, wherein the hot-side metal electrode layer is completely embedded in the hot-side groove, the hot-side contact layer is connected with the hot-side metal electrode layer, and the hot-side contact layer is partially or completely embedded in the hot-side groove.
3. The thermoelectric device with an embedded hot side metal electrode as claimed in claim 1, further comprising a thermoelectric leg, one end of said thermoelectric leg being embedded in said hot side recess.
4. The thermoelectric device with an embedded hot-side metal electrode as claimed in claim 1, wherein said hot-side ceramic layer is a rectangular parallelepiped structure with said hot-side recess or an annular structure with said hot-side recess.
5. The thermoelectric device with an embedded hot side metal electrode as claimed in claim 1, wherein said hot side recess is comprised of two connected mesa-shaped recesses.
6. The thermoelectric device with embedded hot-side metal electrode as claimed in claim 1, wherein said hot-side ceramic layer is made of AlN, SiC, Al2O3、Si3N4Is made of one or more materials.
7. The thermoelectric device with embedded hot-side metal electrode as claimed in claim 1, wherein the thermoelectric material of the thermoelectric legs is Bi2Te3A base, a half-Heusler base, a PbTe base, a MgAgSb base, a SiGe base, a Mg base3Sb2Radical and CoSb3One or more of the base.
8. The thermoelectric device with embedded hot-side metal electrode as claimed in claim 1, wherein said hot-side metal electrode layer is made of one or more materials selected from Cu, Au, Ag.
9. A thermoelectric device with embedded hot side metal electrode as claimed in claim 1 wherein the hot side contact layer is made of one or both of Ni, Fe.
10. A thermoelectric device with an embedded hot side metal electrode as claimed in any one of claims 1 to 9 further comprising a cold side ceramic layer, a cold side metal electrode layer and a cold side contact layer; the cold junction ceramic layer is equipped with the cold junction recess, cold junction metal electrode layer with the embedding of cold section contact layer the cold junction recess, the other end embedding of thermoelectric arm the cold junction recess.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0846250A (en) * | 1994-08-02 | 1996-02-16 | Chichibu Onoda Cement Corp | Thermo-module for thermoelectric cooling |
| WO2002021608A1 (en) * | 2000-09-04 | 2002-03-14 | Shin-Etsu Handotai Co., Ltd. | Thermoelement |
| US20050150538A1 (en) * | 2004-01-09 | 2005-07-14 | Industrial Technology Research Institute | Micro thermoelectric device and manufacturing method thereof |
| KR20100025067A (en) * | 2008-08-27 | 2010-03-09 | 한국전기연구원 | Thermoelectric module using substrate with prominence and depression |
| KR20200000985A (en) * | 2018-06-26 | 2020-01-06 | 현대자동차주식회사 | Thermoelectric conversion module and a method for manufacturing thereof |
| CN213425014U (en) * | 2020-11-16 | 2021-06-11 | 西华大学 | Thermoelectric device with embedded metal electrode |
-
2020
- 2020-11-16 CN CN202011282123.0A patent/CN112242479A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0846250A (en) * | 1994-08-02 | 1996-02-16 | Chichibu Onoda Cement Corp | Thermo-module for thermoelectric cooling |
| WO2002021608A1 (en) * | 2000-09-04 | 2002-03-14 | Shin-Etsu Handotai Co., Ltd. | Thermoelement |
| US20050150538A1 (en) * | 2004-01-09 | 2005-07-14 | Industrial Technology Research Institute | Micro thermoelectric device and manufacturing method thereof |
| KR20100025067A (en) * | 2008-08-27 | 2010-03-09 | 한국전기연구원 | Thermoelectric module using substrate with prominence and depression |
| KR20200000985A (en) * | 2018-06-26 | 2020-01-06 | 현대자동차주식회사 | Thermoelectric conversion module and a method for manufacturing thereof |
| CN213425014U (en) * | 2020-11-16 | 2021-06-11 | 西华大学 | Thermoelectric device with embedded metal electrode |
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