CN112002356B - Information storage component, circuit and display device - Google Patents
Information storage component, circuit and display device Download PDFInfo
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- CN112002356B CN112002356B CN201910447965.8A CN201910447965A CN112002356B CN 112002356 B CN112002356 B CN 112002356B CN 201910447965 A CN201910447965 A CN 201910447965A CN 112002356 B CN112002356 B CN 112002356B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The embodiment of the invention belongs to the technical field of electronics, and provides an information storage component, a circuit and a display device, wherein the information storage component is formed by adopting an electronic switch module comprising at least one electronic switch tube unit and an energy storage module for storing charges, the electronic switch tube unit comprises an electronic switch tube pair group formed by a first electronic switch tube and a second electronic switch tube, and the control of the electronic switch tube unit on bidirectional current is realized, so that the defect that the electronic switch tube only has control capacity on unidirectional current due to the limitation of a manufacturing process is overcome, the information storage component is not limited by the manufacturing process, and the memory function of a capacitor can still be realized.
Description
Technical Field
The embodiment of the invention belongs to the technical field of electronics, and particularly relates to an information storage component, a circuit and a display device.
Background
At present, in order to store a voltage value in a circuit, a capacitor having a charge storage function is generally applied to the circuit together with a switching device, and writing and storing of voltage value information are realized by controlling on and off of the switching device, for example, the capacitor is connected to a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) in a conventional switching connection manner, and the MOSFET is turned on at a specific time to charge the capacitor, so that the voltage value information is written into the capacitor and stored.
In the circuit structure, in order to realize the writing and storage of the voltage value information, the MOSFET is required to have the switching characteristic on the current input by the source electrode and the drain electrode, however, most of the discrete MOSFETs at present are prepared by adopting a vertical process, only have the control capability on the unidirectional current, and cannot realize the memory function of the capacitor.
Disclosure of Invention
The embodiment of the invention provides an information storage component, a circuit and a display device, and aims to solve the problem that most of the conventional discrete MOSFETs only have control capability on unidirectional current and cannot realize the memory function of a capacitor.
The embodiment of the invention provides an information storage assembly, which comprises: the energy storage device comprises an electronic switch module and an energy storage module;
the electronic switch module comprises at least one electronic switch unit, each electronic switch unit comprises a first sub electronic switch unit and a second sub electronic switch unit, the first end of the first sub electronic switch unit is a voltage signal input end, the second end of the first sub electronic switch unit is connected with the second end of the second sub electronic switch unit, a node between the third end of the first sub electronic switch unit and the third end of the second sub electronic switch unit is a control signal input end, the first end of the second sub electronic switch unit is connected with the first end of the energy storage module, the second end of the energy storage module is a switch signal input end, the third end of the energy storage module is grounded, and a parasitic diode in the first sub electronic switch unit is reversely connected in series with a parasitic diode in the second sub electronic switch unit.
Optionally, the first sub-electronic switch unit is a first electronic switch tube, and the second sub-electronic switch unit is a second electronic switch tube;
the first end of the first electronic switching tube is connected with the cathode of a parasitic diode in the first electronic switching tube, the first end of the second electronic switching tube is connected with the cathode of a parasitic diode in the second electronic switching tube, the second end of the first electronic switching tube, the anode of the parasitic diode in the first electronic switching tube, the second end of the second electronic switching tube and the anode of the parasitic diode in the second electronic switching tube are connected in common, and the third end of the first electronic switching tube is connected with the third end of the second electronic switching tube; or
The second end of the first electronic switching tube is connected with the anode of the parasitic diode in the first electronic switching tube, the second end of the second electronic switching tube is connected with the anode of the parasitic diode in the second electronic switching tube, the first end of the first electronic switching tube, the cathode of the parasitic diode in the second electronic switching tube and the first end of the second electronic switching tube are connected in common, and the third end of the first electronic switching tube is connected with the third end of the second electronic switching tube.
Optionally, the electronic switch module includes m electronic switch tube units, m is greater than or equal to 2,m and is a positive integer, and the m electronic switch tube units are sequentially connected in series;
the first end of the first electronic switch tube unit is connected with the input end of the electronic switch module, the control end of the first electronic switch tube unit is connected with the control end of the electronic switch module, the second end of the first electronic switch tube unit is connected with the first end of the second electronic switch tube unit, the control end of the second electronic switch tube unit is connected with the control end of the electronic switch module, and so on, the first end of the mth electronic switch tube unit is connected with the second end of the (m-1) th electronic switch tube unit, the control end of the mth electronic switch tube unit is connected with the control end of the electronic switch module, and the second end of the mth electronic switch tube unit is connected with the output end of the electronic switch module.
Optionally, the electronic switch module includes n electronic switch tube units, n ≧ 2,n is a positive integer, and the n electronic switch tube units are connected in parallel;
the first end of the first electronic switch tube unit is connected with the input end of the electronic switch module, the control end of the first electronic switch tube unit is connected with the control end of the electronic switch module, the second end of the first electronic switch tube unit is connected with the output end of the electronic switch module, and so on, the first end of the nth electronic switch tube unit is connected with the input end of the electronic switch module, the control end of the nth electronic switch tube unit is connected with the control end of the electronic switch module, and the output end of the nth electronic switch tube unit is connected with the output end of the electronic switch module.
Optionally, the first electronic switching tube and the second electronic switching tube are both N-type MOS tubes, or the first electronic switching tube and the second electronic switching tube are both P-type MOS tubes.
Optionally, the first electronic switching tube and the second electronic switching tube are both vertical MOS transistors.
Optionally, the energy storage module includes a third electronic switching tube, a gate of the third electronic switching tube is connected to the first end of the energy storage module, a source of the third electronic switching tube is connected to the second end of the energy storage module, and a drain of the third electronic switching tube is connected to the third end of the energy storage module.
Another embodiment of the present invention also provides an information storage circuit including: an information storage component as claimed in any preceding claim;
a light emitting module; and
a current limiting module;
the switch signal input end of the information storage component is connected with the first end of the light-emitting module, the second end of the light-emitting module is connected with the first end of the current-limiting module, and the second end of the current-limiting module is connected with the light-emitting power supply signal input end of the information storage circuit.
Optionally, the information storage circuit further includes: a package for packaging the electronic switch module;
the package body includes: a scanning signal interface, a data signal input interface and a data signal output interface;
the input end of the electronic switch module is connected with the data signal input interface, the control end of the electronic switch module is connected with the scanning signal interface, and the output end of the electronic switch module is connected with the data signal output interface.
Another embodiment of the present invention also provides a display device, including:
a display panel comprising a plurality of information storage components as described in any preceding claim; and
and the control unit is electrically connected with the display panel, and is used for driving the display panel.
In the information storage component, the circuit and the display device provided by the embodiment of the invention, the information storage component is formed by adopting the electronic switch module comprising at least one electronic switch tube unit and the energy storage module for storing electric charges, wherein the electronic switch tube unit comprises an electronic switch tube pair group formed by a first electronic switch tube and a second electronic switch tube, and the control of the electronic switch tube unit on bidirectional current is realized, so that the defect that the electronic switch tube only has control capability on unidirectional current due to the limitation of a manufacturing process is overcome, the information storage component can not be limited by the manufacturing process, and the memory function of a capacitor can still be realized.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1 is a schematic diagram of an equivalent circuit of an information storage assembly provided by one embodiment of the present invention;
FIG. 2 is a schematic diagram of the operation of an information storage component provided by one embodiment of the present invention;
FIG. 3 is a schematic diagram of an equivalent circuit of an information storage assembly provided by another embodiment of the present invention;
fig. 4 is a schematic structural diagram of an electronic switching tube unit provided by an embodiment of the invention;
FIG. 5 is a schematic diagram of an equivalent circuit of an information storage component according to another embodiment of the present invention;
FIG. 6 is a schematic diagram of an equivalent circuit of an information storage component according to another embodiment of the present invention;
FIG. 7 is a schematic diagram of an equivalent circuit of an information storage component according to another embodiment of the present invention;
FIG. 8 is a schematic diagram of an equivalent circuit of an information storage component according to another embodiment of the present invention;
FIG. 9 is a schematic diagram of an equivalent circuit of an information storage assembly according to another embodiment of the present invention;
FIG. 10 is a schematic diagram of an equivalent circuit of an information storage circuit according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of a package of an information storage assembly according to an embodiment of the present invention;
FIG. 12 is a schematic diagram of an equivalent circuit of an information storage circuit according to another embodiment of the present invention;
fig. 13 is a schematic diagram of a display device according to an embodiment of the invention.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the technical solutions in the embodiments of the present invention will be clearly described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "comprises" and "comprising," and any variations thereof, in the description and claims of this invention and the above-described drawings are intended to cover non-exclusive inclusions. For example, a process, method, or system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus. Furthermore, the terms "first", "second", and "third", etc. are used to distinguish different objects, and are not used to describe a particular order.
The MOSFET adopting the vertical process has the characteristics that the drain electrode is positioned on a substrate, and the source electrode and the drain electrode are asymmetrical, wherein an equivalent parasitic diode is connected in parallel with the MOSFET between the source electrode and the drain electrode, the anode of the parasitic diode is electrically connected with the source electrode of the MOSFET, and the cathode of the parasitic diode is electrically connected with the drain electrode of the MOSFET, so that the source electrode voltage cannot be higher than the drain electrode voltage, and the MOSFET cannot control the bidirectional current.
The embodiment of the invention adopts an electronic switch module comprising at least one electronic switch tube unit and an energy storage module for storing charges to form an information storage component, wherein the electronic switch tube unit comprises an electronic switch tube pair group formed by a first electronic switch tube and a second electronic switch tube, and the control of the electronic switch tube unit on bidirectional current is realized, so that the defect that a discrete electronic switch tube manufactured by a vertical process only has control capacity on unidirectional current is overcome, the information storage component is not limited by a manufacturing process, and the memory function of a capacitor can still be realized.
The discrete electronic component in the embodiment of the present invention refers to an electronic component that functions as an independent circuit and constitutes a basic unit of a circuit, for example, a resistor, a capacitor, an inductor, an electromechanical element (a connector, a switch, a relay, or the like), an electroacoustic device, an optoelectronic device, a sensitive component, a display device, a piezoelectric device, or the like.
FIG. 1 is a schematic diagram of an equivalent circuit of an information storage component provided by one embodiment of the invention. As shown in fig. 1, the information storage component in this embodiment includes: the electronic switch module 10 includes at least one electronic switch unit 11, each electronic switch unit 11 includes a first sub-electronic switch unit M1 and a second sub-electronic switch unit M2, a first end of the first sub-electronic switch unit M1 is a voltage signal input end, a second end of the first sub-electronic switch unit M1 is connected to a second end of the second sub-electronic switch unit M2, a node between a third end of the first sub-electronic switch unit M1 and a third end of the second sub-electronic switch unit M2 is a control signal input end, a first end of the second sub-electronic switch unit M2 is connected to a first end of the energy storage module 20, a second end of the energy storage module 20 is a switch signal input end, a third end of the energy storage module 20 is grounded, and a parasitic diode D1 in the first sub-electronic switch unit M1 and a parasitic diode D2 in the second sub-electronic switch unit M1 are connected in series in a reverse direction.
In this embodiment, specifically, a first end of the first sub-electronic switch unit M1 is set as a voltage signal input end, the voltage signal input end is configured to receive a voltage signal, the voltage signal passes through the electronic switch unit 11 and is stored in the energy storage module 20, a second end of the first sub-electronic switch unit M1 is connected to a second end of the second sub-electronic switch unit M2, a node between a third end of the first sub-electronic switch unit M1 and a third end of the second sub-electronic switch unit M2 is a control signal input end, the control signal input end is configured to receive a control signal, and the control signal is configured to control on and off of the electronic switch unit, so as to set an amount of charges stored in the energy storage module 20 according to a user requirement, so as to achieve a purpose of storing a voltage value. In this embodiment, the parasitic diode D1 in the first sub-electronic switch unit M1 is connected in series with the parasitic diode D2 in the second sub-electronic switch unit M1 in reverse, so that the electronic switch unit 11 is not limited by the process of the electronic switch device, the problem of charge leakage when the level of the signal input by the control signal input terminal changes is avoided, and the purpose of controlling the bidirectional current is achieved.
In this embodiment, the energy storage module 20 forms a potential difference across the energy storage module 20 by storing charges, so as to store corresponding voltage information, specifically, when the charges input to the energy storage module 20 gradually increase, the potential difference across the energy storage module 20 and an electric field generated by the charges start to gradually increase, and the potential difference across the energy storage module 20 and the stored voltage value are in a one-to-one correspondence relationship, so that the electronic switch module 10 is controlled to be turned on and off and the received voltage signal, and the number of the charges stored in the energy storage module 20 is controlled, so as to adjust the potential difference across the energy storage module 20, so as to store corresponding voltage information, thereby achieving the purpose of storing voltage information.
In one embodiment, the first sub-electronic switching unit M1 and the second sub-electronic switching unit M2 have the same structure. In this embodiment, the first sub-electronic switch unit M1 and the second sub-electronic switch unit M2 having the same structure are connected in series in reverse, so that the parasitic diode D1 in the first sub-electronic switch unit M1 is connected in series in reverse with the parasitic diode D2 in the second sub-electronic switch unit M2, so that the electronic switch unit 11 is not limited by the process of the electronic switch device, the problem of charge leakage occurring when the level of the signal input by the control signal input terminal changes is avoided, and the purpose of controlling the bidirectional current is achieved.
In one embodiment, an input terminal of the electronic switch module 10 serves as a voltage signal input terminal of the information storage component, a control terminal of the electronic switch module 10 serves as a control signal input terminal of the information storage component, an output terminal of the electronic switch module 10 is connected to a first terminal of the energy storage module 20, a second terminal of the energy storage module is grounded, and a third terminal of the energy storage module 20 is connected to a switching signal input terminal of the information storage component;
the electronic switch module 10 includes at least one electronic switch tube unit 11, a first end of the at least one electronic switch tube unit 11 is connected to an input end of the electronic switch module 10, a second end of the at least one electronic switch tube unit 11 is connected to an output end of the electronic switch module 10, and a control end of the at least one electronic switch tube unit 11 is connected to a control end of the electronic switch module 10.
In one embodiment, the first sub electronic switching unit M1 is a first electronic switching tube, and the second sub electronic switching unit M2 is a second electronic switching tube, wherein a first end of the first electronic switching tube is connected to a cathode of the parasitic diode D1 in the first electronic switching tube, a second end of the first electronic switching tube, an anode of the parasitic diode D1 in the first electronic switching tube, a second end of the second electronic switching tube, and an anode of the parasitic diode D2 in the second electronic switching tube are connected in common, a first end of the second electronic switching tube is connected to a cathode of the parasitic diode D2 in the second electronic switching tube, and a third end of the first electronic switching tube is connected to a third end of the second electronic switching tube.
In one embodiment, the drain of the first electronic switch tube may be the first terminal of the first electronic switch tube, the source of the first electronic switch tube may be the second terminal of the first electronic switch tube, and the gate of the first electronic switch tube may be the third terminal of the first electronic switch tube. The drain of the second electronic switch tube may be the first terminal of the second electronic switch tube, the source of the second electronic switch tube may be the second terminal of the second electronic switch tube, and the gate of the second electronic switch tube may be the third terminal of the second electronic switch tube.
In this embodiment, the first electronic switch tube and the second electronic switch tube are manufactured by a vertical process, referring to fig. 1, an equivalent parasitic diode D1 is arranged between a source and a drain of the first electronic switch tube, and an equivalent parasitic diode D2 is arranged between a source and a drain of the second electronic switch tube, wherein an anode of the equivalent parasitic diode D1 is electrically connected to the source of the first electronic switch tube, a cathode of the equivalent parasitic diode D1 is electrically connected to the drain of the first electronic switch tube, an anode of the equivalent parasitic diode D2 is electrically connected to the source of the second electronic switch tube, and a cathode of the equivalent parasitic diode D2 is electrically connected to the drain of the second electronic switch tube.
In one embodiment, the first electronic switch tube and the second electronic switch tube are field effect transistors, and particularly, the field effect transistors control the current of the output loop by controlling the electric field effect of the input loop.
Fig. 2 is a schematic diagram of an information storage assembly according to an embodiment of the present invention, referring to fig. 2, when a voltage signal is at a high level and a control signal is at a low level, the first sub electronic switch unit M1 is turned off, at this time, no current flows into the energy storage module 20, the potential of the energy storage module 20 is at a low level, when the voltage signal is at a high level and the control signal is at a high level, the first sub electronic switch unit M1 is turned on, the voltage signal charges the energy storage module 20, at this time, the potential of the energy storage module 20 is the same as the voltage signal, and after the potential of the voltage signal changes from the high level to the low level, the first sub electronic switch unit M1 is turned off, and due to the existence of the parasitic capacitor D1 and the parasitic capacitor D2, the charge in the energy storage module 20 does not flow to the voltage signal input end through the electronic switch module 10, so that the energy storage module 20 stores input voltage information, and achieves the purpose of memorizing voltage.
In one embodiment, referring to fig. 3, in this embodiment, the first sub electronic switching unit M1 is a first electronic switching tube, the second sub electronic switching unit M2 is a second electronic switching tube, the second end of the first electronic switching tube, the anode of the parasitic diode D1 in the first electronic switching tube, and the first end of the electronic switching tube unit 11 are connected in common, the first end of the first electronic switching tube, the cathode of the parasitic diode D1 in the first electronic switching tube, the cathode of the parasitic diode D2 in the second electronic switching tube, and the first end of the second electronic switching tube are connected in common, the second end of the second electronic switching tube, the anode of the parasitic diode D2 in the second electronic switching tube, and the second end of the electronic switching tube unit 11 are connected in common, and the third end of the first electronic switching tube and the second electronic switching tube are connected in common to the control end of the electronic switching tube unit 11.
In this embodiment, when the voltage signal is a high level and the control signal is a low level, the second sub electronic switch unit M2 is turned off, no current flows into the energy storage module 20 at this time, the potential of the energy storage module 20 is a low level, when the voltage signal is a high level and the control signal is a high level, the second sub electronic switch unit M2 is turned on, the voltage signal charges the energy storage module 20, the potential of the energy storage module 20 is the same as the voltage signal at this time, and when the potential of the voltage signal changes from the high level to the low level, the second sub electronic switch unit M2 is turned off, and due to the existence of the parasitic capacitor D1 and the parasitic capacitor D2, the charge in the energy storage module 20 does not flow to the voltage signal input end through the electronic switch module 10, so as to store the input voltage information by the energy storage module 20 and achieve the purpose of memorizing the voltage.
Fig. 4 is a schematic structural diagram of an electronic switch unit according to an embodiment of the present invention, and referring to fig. 4, a first electronic switch is fabricated by a vertical process, a drain of the first electronic switch is located on a substrate, and a source and the drain are asymmetric, in this embodiment, a second electronic switch having the same structure as the first electronic switch is fabricated beside a first sub-electronic switch unit M1 fabricated by the vertical process, and electrical connection of a drain end is implemented by using conductivity of two electronic switches, where N + in fig. 4 represents heavy doping of an N-type element, N-represents light doping of an N-type element, and P-represents light doping of a P-type element.
In one embodiment, referring to fig. 5, the electronic switch module 10 includes m electronic switch tube units 11, where m ≧ 2,m is a positive integer, and then m electronic switch tube units 11 are connected in series in sequence;
the first end of the first electronic switch tube unit 11 is connected to the input end of the electronic switch module 10, the control end of the first electronic switch tube unit 11 is connected to the control end of the electronic switch module 10, the second end of the first electronic switch tube unit 11 is connected to the first end of the second electronic switch tube unit 11, the control end of the second electronic switch tube unit 11 is connected to the control end of the electronic switch module 10, and so on, the first end of the mth electronic switch tube unit 11 is connected to the second end of the (m-1) th electronic switch tube unit 11, the control end of the mth electronic switch tube unit 11 is connected to the control end of the electronic switch module 10, and the second end of the mth electronic switch tube unit 11 is connected to the output end of the electronic switch module 10.
In this embodiment, the m electronic switching tube units 11 are sequentially connected in series to perform the same function, and when a short circuit occurs in a parasitic diode in one of the electronic switching tubes through the series connection, at this time, because other parasitic diodes still exist in the series connection, the information storage module can still realize the control of the circuit, thereby avoiding the problem that the whole circuit fails because only one electronic switching tube unit 11 is short-circuited due to the parasitic diode.
In one embodiment, referring to fig. 6, the electronic switch module 10 includes n electronic switch tube units 11, where n ≧ 2,n is a positive integer, and then n electronic switch tube units 11 are connected in parallel;
the first end of the first electronic switch tube unit 11 is connected to the input end of the electronic switch module 10, the control end of the first electronic switch tube unit 11 is connected to the control end of the electronic switch module 10, the second end of the first electronic switch tube unit 11 is connected to the output end of the electronic switch module 10, and so on, the first end of the mth electronic switch tube unit 11 is connected to the input end of the electronic switch module 10, the control end of the mth electronic switch tube unit 11 is connected to the control end of the electronic switch module 10, and the first end of the mth electronic switch tube unit 11 is connected to the output end of the electronic switch module 10.
In this embodiment, n electronic switch tube units 11 are connected in parallel, and when an electronic switch tube in one of the branches is open-circuited, the information storage assembly can still control the circuit due to the existence of other parallel branches, thereby avoiding the problem that the whole circuit fails when the electronic switch tube is open-circuited in only one electronic switch tube unit 11.
In an embodiment, referring to fig. 7, the electronic switch module 10 may further include a plurality of electronic switch tube units 11, where the electronic switch tube units 11 may form a plurality of sets of series circuits and then are connected in parallel, so that when a parasitic capacitance short circuit occurs simultaneously in an electronic switch tube in the electronic switch module 10 or an open circuit occurs due to damage of the electronic switch tube, the information storage component may still effectively control the circuit, and the problem that the whole circuit fails due to damage of the electronic switch tube in the electronic switch module 10 is avoided.
In one embodiment, the first electronic switching tube and the second electronic switching tube are both N-type MOS tubes, or the first electronic switching tube and the second electronic switching tube are both P-type MOS tubes. For example, when the first electronic switching tube is an N-type MOS tube, the source of the N-type MOS tube is the source of the first electronic switching tube, the drain of the N-type MOS tube is the first end of the first electronic switching tube, and the gate of the N-type MOS tube is the third end of the first electronic switching tube; when the second electronic switch tube is also an N-type MOS tube, the source of the N-type MOS tube is the second end of the second electronic switch tube, the drain of the N-type MOS tube is the first end of the second electronic switch tube, and the gate of the N-type MOS tube is the third end of the second electronic switch tube, and by designing the first electronic switch tube and the second electronic switch tube in an opposite manner, the parasitic capacitance D1 in the first electronic switch tube and the parasitic capacitance D2 in the second electronic switch tube are opposite in direction, and specifically, the cathode of the parasitic capacitance D1 is connected to the cathode of the parasitic capacitance D2, so that not only the leakage of the information storage device can be suppressed, but also the electronic switch tube unit 11 can have a function of controlling a bidirectional current.
In one embodiment, the first electronic switching tube and the second electronic switching tube are both vertical MOS transistors, and in particular, the first electronic switching tube and the second electronic switching tube are prepared by a vertical process, so that the first electronic switching tube and the second electronic switching tube in the electronic switching tube unit 11 can be formed on the same substrate, for example, the drains of the two electronic switching tubes can be electrically connected by using the conductive property of the substrate by disposing one same MOSFET beside the one MOSFET.
In one embodiment, referring to fig. 8, the energy storage module 20 includes a third electronic switch M3, a gate of the third electronic switch M3 is connected to the first end of the energy storage module 20, a source of the third electronic switch M3 is connected to the second end of the energy storage module 20, and a drain of the third electronic switch M3 is connected to the third end of the energy storage module 20. In this embodiment, since the parasitic capacitance exists inside the third electronic switch tube M3, the effect of storing charges can be achieved by the parasitic capacitance, so as to realize the storage of the voltage information.
In one embodiment, the third electronic switching tube M3 may be a MOSFET, and the parasitic capacitance of the MOSFET is used to achieve the effect of storing charges, so as to achieve the purpose of storing voltage information.
In an embodiment, referring to fig. 9, the energy storage module 20 further includes a first capacitor C1, a first end of the first capacitor C1 is connected to the gate of the third electronic switch M3, and a second end of the first capacitor C1 is connected to the source of the third electronic switch M3. In this embodiment, the charges flowing into the energy storage module 20 may be stored by additionally adding a capacitor, wherein the capacitance of the first capacitor C1 may also be adjusted according to the magnitude of the required storage voltage value.
Fig. 10 is a schematic diagram of an equivalent circuit of an information storage circuit according to an embodiment of the present invention, and referring to fig. 10, the information storage circuit in this embodiment includes: an information storage component as described in the above embodiments;
a light emitting module 30; and
a current limiting module 40;
the switch signal input end of the information storage component is connected with the first end of the light-emitting module 30, the second end of the light-emitting module 30 is connected with the first end of the current limiting module 40, and the second end of the current limiting module 40 is connected with the light-emitting power supply signal input end of the information storage circuit.
In one embodiment, referring to fig. 11, the information storage circuit further includes: a package body 12 for packaging the electronic switch module;
the package body 12 includes: a scanning signal interface, a data signal input interface and a data signal output interface;
the input end of the electronic switch module 10 is connected to the data signal input interface, the control end of the electronic switch module 10 is connected to the scan signal interface, and the output end of the electronic switch module 10 is connected to the data signal output interface.
In the present embodiment, the number of solder joints on the printed circuit board is reduced by packaging the electronic switch module 10 in the package 12. When welding on printed circuit board, the solder joint is more, the line of walking in the printed circuit board is more complicated, its design is more difficult, the cost just is higher, because electronic switch module 10's electronic components's connection is fixed, encapsulate electronic switch module 10 in packaging body 12, in order to form an electronic switch that can control bidirectional current, thereby reach the voltage information to control in the energy storage module 20, and make under the condition of not increasing printed circuit board's wiring density by a large amount, to reducing the volume of information storage subassembly, do not increase drive circuit's complexity.
In one embodiment, referring to fig. 12, the light emitting module 30 includes an LED chip LED1, a cathode of the LED chip LED1 is connected to a first end of the light emitting module 30, and an anode of the LED chip LED1 is connected to a second end of the light emitting module 30.
In one embodiment, the color of the first LED chip LED1 may be set according to user needs.
In one embodiment, referring to fig. 11, the current limiting module 40 includes a first resistor R1, wherein a first end of the first resistor R1 is connected to a first end of the current limiting module 40, and a second end of the first resistor R1 is connected to a second end of the current limiting module 40.
Fig. 13 is a schematic equivalent circuit diagram of a display device according to an embodiment of the invention. As shown in fig. 13, the display device 60 in the present embodiment includes:
a display panel 62, the display panel 62 comprising a plurality of information storage components as described in any of the above embodiments; and
the control unit 61, the control unit 61 is used for driving the display panel 62, and the control unit 61 is electrically connected with the display panel 62.
In one embodiment, the control Unit 61 may be implemented by a general-purpose Integrated Circuit, such as a Central Processing Unit (CPU), or an Application Specific Integrated Circuit (ASIC).
In one embodiment, the display panel 62 includes a pixel array composed of rows of pixels and columns of pixels.
In the information storage component, the circuit and the display device provided by the embodiment of the invention, the information storage component is formed by adopting the electronic switch module comprising at least one electronic switch tube unit and the energy storage module for storing electric charges, wherein the electronic switch tube unit comprises an electronic switch tube pair group formed by a first electronic switch tube and a second electronic switch tube, and the control of the electronic switch tube unit on bidirectional current is realized, so that the defect that a discrete electronic switch tube only has control capacity on unidirectional current due to the limitation of a manufacturing process is overcome, the information storage component can not be limited by the manufacturing process, and the memory function of a capacitor can still be realized.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. An information storage assembly, comprising: the energy storage device comprises an electronic switch module and an energy storage module;
the electronic switch module comprises at least one electronic switch unit, each electronic switch unit comprises a first sub electronic switch unit and a second sub electronic switch unit, the first end of the first sub electronic switch unit is a voltage signal input end, the second end of the first sub electronic switch unit is connected with the second end of the second sub electronic switch unit, a node between the third end of the first sub electronic switch unit and the third end of the second sub electronic switch unit is a control signal input end, the first end of the second sub electronic switch unit is connected with the first end of the energy storage module, the second end of the energy storage module is a switch signal input end, the third end of the energy storage module is grounded, and a parasitic diode in the first sub electronic switch unit is reversely connected in series with a parasitic diode in the second sub electronic switch unit;
the energy storage module forms a potential difference at two ends of the energy storage module by storing charges so as to store corresponding voltage information;
the quantity of the charges in the energy storage module is adjusted by controlling the on and off of the electronic switch module and the voltage signal received by the electronic switch module.
2. The information storage assembly of claim 1 wherein the first sub-electronic switching unit is a first electronic switching tube and the second sub-electronic switching unit is a second electronic switching tube;
the first end of the first electronic switching tube is connected with the cathode of a parasitic diode in the first electronic switching tube, the first end of the second electronic switching tube is connected with the cathode of a parasitic diode in the second electronic switching tube, the second end of the first electronic switching tube, the anode of the parasitic diode in the first electronic switching tube, the second end of the second electronic switching tube and the anode of the parasitic diode in the second electronic switching tube are connected in common, and the third end of the first electronic switching tube is connected with the third end of the second electronic switching tube; or
The second end of the first electronic switching tube is connected with the anode of the parasitic diode in the first electronic switching tube, the second end of the second electronic switching tube is connected with the anode of the parasitic diode in the second electronic switching tube, the first end of the first electronic switching tube, the cathode of the parasitic diode in the second electronic switching tube and the first end of the second electronic switching tube are connected in common, and the third end of the first electronic switching tube is connected with the third end of the second electronic switching tube.
3. The information storage assembly of claim 1 wherein the electronic switch module comprises m electronic switch tube units, m ≧ 2,m is a positive integer, and m of the electronic switch tube units are connected in series in sequence;
the first end of the first electronic switch tube unit is connected with the input end of the electronic switch module, the control end of the first electronic switch tube unit is connected with the control end of the electronic switch module, the second end of the first electronic switch tube unit is connected with the first end of the second electronic switch tube unit, the control end of the second electronic switch tube unit is connected with the control end of the electronic switch module, and so on, the first end of the mth electronic switch tube unit is connected with the second end of the (m-1) th electronic switch tube unit, the control end of the mth electronic switch tube unit is connected with the control end of the electronic switch module, and the second end of the mth electronic switch tube unit is connected with the output end of the electronic switch module.
4. The information storage assembly of claim 1 wherein the electronic switch module comprises n electronic switch tube units, n ≧ 2,n is a positive integer, and n of the electronic switch tube units are connected in parallel;
the first end of the first electronic switch tube unit is connected with the input end of the electronic switch module, the control end of the first electronic switch tube unit is connected with the control end of the electronic switch module, the second end of the first electronic switch tube unit is connected with the output end of the electronic switch module, and so on, the first end of the nth electronic switch tube unit is connected with the input end of the electronic switch module, the control end of the nth electronic switch tube unit is connected with the control end of the electronic switch module, and the output end of the nth electronic switch tube unit is connected with the output end of the electronic switch module.
5. The information storage module as claimed in claim 2, wherein the first electronic switching transistor and the second electronic switching transistor are both N-type MOS transistors, or the first electronic switching transistor and the second electronic switching transistor are both P-type MOS transistors.
6. The information storage assembly of claim 2 wherein the first electronic switching tube and the second electronic switching tube are vertical MOS transistors.
7. The information storage assembly of claim 1, wherein the energy storage module comprises a third electronic switch, a gate of the third electronic switch is connected to the first terminal of the energy storage module, a source of the third electronic switch is connected to the second terminal of the energy storage module, and a drain of the third electronic switch is connected to the third terminal of the energy storage module.
8. An information storage circuit, comprising: an information storage component as claimed in any one of claims 1 to 7;
a light emitting module; and
a current limiting module;
the switch signal input end of the information storage component is connected with the first end of the light-emitting module, the second end of the light-emitting module is connected with the first end of the current-limiting module, and the second end of the current-limiting module is connected with the light-emitting power supply signal input end of the information storage circuit.
9. The information storage circuit of claim 8, wherein the information storage circuit further comprises: a package for packaging the electronic switch module;
the package body includes: a scanning signal interface, a data signal input interface and a data signal output interface;
the input end of the electronic switch module is connected with the data signal input interface, the control end of the electronic switch module is connected with the scanning signal interface, and the output end of the electronic switch module is connected with the data signal output interface.
10. A display device, comprising:
a display panel comprising a plurality of information storage components as claimed in any one of claims 1 to 7; and
and the control unit is electrically connected with the display panel, and is used for driving the display panel.
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| CN201910447965.8A CN112002356B (en) | 2019-05-27 | 2019-05-27 | Information storage component, circuit and display device |
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| CN201910447965.8A CN112002356B (en) | 2019-05-27 | 2019-05-27 | Information storage component, circuit and display device |
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| CN112002356B true CN112002356B (en) | 2022-12-09 |
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| CN1855192A (en) * | 2005-04-20 | 2006-11-01 | 视宝制造股份有限公司 | Driver circuit for plasma display panels having the function of energy reclaiming |
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