CN111952138A - In-situ atomic layer deposition scanning electron microscope - Google Patents
In-situ atomic layer deposition scanning electron microscope Download PDFInfo
- Publication number
- CN111952138A CN111952138A CN202010823490.0A CN202010823490A CN111952138A CN 111952138 A CN111952138 A CN 111952138A CN 202010823490 A CN202010823490 A CN 202010823490A CN 111952138 A CN111952138 A CN 111952138A
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- electron microscope
- atomic layer
- layer deposition
- chamber
- cavity
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 48
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 27
- 238000007789 sealing Methods 0.000 claims abstract description 22
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 238000013016 damping Methods 0.000 claims description 18
- 239000012780 transparent material Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 9
- 238000012360 testing method Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004154 testing of material Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
- F16F15/00—Suppression of vibrations in systems; Means or arrangements for avoiding or reducing out-of-balance forces, e.g. due to motion
- F16F15/02—Suppression of vibrations of non-rotating, e.g. reciprocating systems; Suppression of vibrations of rotating systems by use of members not moving with the rotating systems
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16M—FRAMES, CASINGS OR BEDS OF ENGINES, MACHINES OR APPARATUS, NOT SPECIFIC TO ENGINES, MACHINES OR APPARATUS PROVIDED FOR ELSEWHERE; STANDS; SUPPORTS
- F16M11/00—Stands or trestles as supports for apparatus or articles placed thereon ; Stands for scientific apparatus such as gravitational force meters
- F16M11/42—Stands or trestles as supports for apparatus or articles placed thereon ; Stands for scientific apparatus such as gravitational force meters with arrangement for propelling the support stands on wheels
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16M—FRAMES, CASINGS OR BEDS OF ENGINES, MACHINES OR APPARATUS, NOT SPECIFIC TO ENGINES, MACHINES OR APPARATUS PROVIDED FOR ELSEWHERE; STANDS; SUPPORTS
- F16M7/00—Details of attaching or adjusting engine beds, frames, or supporting-legs on foundation or base; Attaching non-moving engine parts, e.g. cylinder blocks
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Aviation & Aerospace Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an in-situ atomic layer deposition scanning electron microscope, which relates to the field of in-situ testing and comprises a rack, wherein an electron microscope chamber is arranged on the rack, an opening is formed in one side of the electron microscope chamber, a sealing valve is fixedly connected to the opening end of one side of the electron microscope chamber, an atomic layer deposition chamber is fixedly installed on one side, away from the electron microscope chamber, of the sealing valve, a horizontally arranged magnetic rod is fixedly installed on one side, away from the sealing valve, of the atomic layer deposition chamber, a magnetic rod shaft is movably arranged in the magnetic rod in a penetrating mode, and the end part of the magnetic rod shaft can horizontally move in the atomic layer deposition chamber; the electron gun is installed at the top of the electron microscope cavity in a sealing mode, and the molecular pump is connected to the bottom of the electron microscope cavity in a sealing mode. The invention can test in-situ atomic layer deposition and dynamically monitor the micro-morphology of the material after the atomic layer deposition of the film in the whole process.
Description
Technical Field
The invention relates to the technical field of in-situ testing, in particular to an in-situ atomic layer deposition scanning electron microscope.
Background
The application of the in-situ testing technology plays a role in promoting the development of materials science, and the micro-morphology of various materials and products thereof can be more deeply revealed by dynamically monitoring the micro-morphology of the materials through an electron microscope in the whole process of material testing.
In industrial production, in order to improve the performance of various materials, surface coating is one of the most widely used methods, and at present, Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), sol-gel method (sol-gel), and Atomic Layer Deposition (ALD) are mainly used as preparation methods. Among them, atomic layer deposition technology is a special chemical vapor deposition technology, and the prepared coating has various advantages compared with other methods. Atomic Layer Deposition (ALD) is becoming an essential technology in the field of microelectronic device fabrication, semiconductors.
At present, the existing device can not carry out in-situ atomic layer deposition test and can not dynamically monitor the micro appearance of the material after the atomic layer deposition film in the whole process, so that the development of an in-situ atomic layer deposition test system has important significance for researching the appearance of the material film.
Disclosure of Invention
The invention aims to provide an in-situ atomic layer deposition scanning electron microscope, which is used for solving the problems in the prior art, can test in-situ atomic layer deposition and can dynamically monitor the micro-morphology of a material after an atomic layer deposition film in the whole process.
In order to achieve the purpose, the invention provides the following scheme:
the invention provides an in-situ atomic layer deposition scanning electron microscope, which comprises a rack, wherein an electron microscope chamber is arranged on the rack, an opening is formed in one side of the electron microscope chamber, a sealing valve is fixedly connected to the opening end of one side of the electron microscope chamber, an atomic layer deposition chamber is fixedly installed on one side, away from the electron microscope chamber, of the sealing valve, a horizontally arranged magnetic rod is fixedly installed on one side, away from the sealing valve, of the atomic layer deposition chamber, a magnetic rod shaft is movably arranged in the magnetic rod in a penetrating mode, and the end part of the magnetic rod shaft can horizontally move in the atomic layer deposition chamber or the electron microscope chamber; the electron gun is installed at the top of the electron microscope cavity in a sealing mode, and the molecular pump is connected to the bottom of the electron microscope cavity in a sealing mode.
Optionally, a damping table is fixedly mounted on the frame, and the electron microscope cavity is fixedly arranged on the damping table; the damping platform is provided with a through hole, and the molecular pump is connected with the electron microscope cavity through the through hole of the damping platform.
Optionally, an observation window is arranged on the side wall of the cavity of the electron microscope, and the observation window is made of transparent materials.
Optionally, four ground feet are symmetrically arranged at the bottom of the rack, and the height of each ground foot can be adjusted.
Optionally, the bottom of the frame is provided with a roller, and the roller is arranged between two adjacent ground feet.
Optionally, four cushion blocks are symmetrically arranged at the bottom of the electron microscope cavity, and the electron microscope cavity is fixedly connected with the damping table through the cushion blocks.
Compared with the prior art, the invention has the following technical effects:
the device has a simple structure, is convenient to use, can be used for testing in-situ atomic layer deposition, and can dynamically monitor the micro-morphology of the material after the atomic layer deposition of the film in the whole process; the vibration damping table can eliminate vibration so as not to influence equipment.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic structural view of an in situ ALD SEM in accordance with the present invention;
FIG. 2 is a schematic diagram of a sample coating state in an in-situ ALD scanning electron microscope in accordance with the present invention;
FIG. 3 is a schematic diagram of the observation state of the appearance of a sample in an in-situ atomic layer deposition scanning electron microscope according to the present invention;
wherein, 1 is a frame, 2 is an electron microscope chamber, 3 is a sealing valve, 4 is an atomic layer deposition chamber, 5 is a magnetic rod, 6 is a magnetic rod shaft, 7 is an electron gun, 8 is a molecular pump, 9 is a damping table, 10 is a ground foot, 11 is a roller, 12 is a cushion block, and 13 is a sample.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide an in-situ atomic layer deposition scanning electron microscope, which is used for solving the problems in the prior art, can test in-situ atomic layer deposition and can dynamically monitor the micro-morphology of a material after an atomic layer deposition film in the whole process.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
The invention provides an in-situ atomic layer deposition scanning electron microscope, as shown in fig. 1-3, the in-situ atomic layer deposition scanning electron microscope comprises a rack 1, an electron microscope chamber 2 is arranged on the rack 1, an opening is arranged on one side of the electron microscope chamber 2, a sealing valve 3 is fixedly connected to the opening end on one side of the electron microscope chamber 2, an atomic layer deposition chamber 4 is fixedly installed on one side of the sealing valve 3 away from the electron microscope chamber 2, a horizontally arranged magnetic rod 5 is fixedly installed on one side of the atomic layer deposition chamber 4 away from the sealing valve 3, a magnetic rod shaft 6 is movably arranged in the magnetic rod 5 in a penetrating manner, and the end part of the magnetic rod shaft 6 can; electron gun 7 is installed to electron microscope cavity 2 top sealing, and electron microscope cavity 2 bottom sealing connection has molecular pump 8.
Preferably, the frame 1 is fixedly provided with a damping table 9, and the electron microscope chamber 2 is fixedly arranged on the damping table 9; a through hole is formed in the damping table 9, and the molecular pump 8 is connected with the electron microscope cavity 2 through the through hole of the damping table 9. An observation window is arranged on the side wall of the electron microscope cavity 2 and made of transparent materials. Four ground feet 10 are symmetrically arranged at the bottom of the frame 1, and the height of the ground feet 10 can be adjusted. The bottom of the frame 1 is provided with a roller 11, and the roller 11 is arranged between two adjacent ground feet 10. Four cushion blocks 12 are symmetrically arranged at the bottom of the electron microscope cavity 2, and the electron microscope cavity 2 is fixedly connected with the damping table 9 through the cushion blocks 12.
When the device is used, a sample 13 is firstly placed at one end of a magnetic force rod shaft 6, film coating is carried out in an atomic layer deposition chamber 4, a sealing valve 3 is opened after the film coating is finished, the magnetic force rod shaft 6 is pushed to transfer the sample 13 into an electron microscope chamber 2, the sample 13 is positioned below an electron gun 7 to carry out appearance observation, and after the appearance observation is finished, the magnetic force rod shaft 6 is pulled to transfer the sample 13 back to the atomic layer deposition chamber 4 to carry out second film coating, and then the sample 13 is taken out. The molecular pump 8 is used for vacuumizing the electron microscope cavity 2, and the damping table 9 can eliminate vibration so as to avoid influencing equipment.
The principle and the implementation mode of the invention are explained by applying a specific example, and the description of the embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (6)
1. An in situ atomic layer deposition scanning electron microscope, comprising: the device comprises a rack, wherein an electron microscope chamber is arranged on the rack, an opening is formed in one side of the electron microscope chamber, a sealing valve is fixedly connected to the opening end of one side of the electron microscope chamber, an atomic layer deposition chamber is fixedly mounted on one side, away from the electron microscope chamber, of the sealing valve, a magnetic rod which is horizontally arranged is fixedly mounted on one side, away from the sealing valve, of the atomic layer deposition chamber, a magnetic rod shaft is movably arranged in the magnetic rod in a penetrating mode, and the end portion of the magnetic rod shaft can horizontally move in the atomic layer deposition chamber or the electron microscope; the electron gun is installed at the top of the electron microscope cavity in a sealing mode, and the molecular pump is connected to the bottom of the electron microscope cavity in a sealing mode.
2. The in situ atomic layer deposition scanning electron microscope of claim 1, wherein: a damping table is fixedly arranged on the rack, and the electron microscope cavity is fixedly arranged on the damping table; the damping platform is provided with a through hole, and the molecular pump is connected with the electron microscope cavity through the through hole of the damping platform.
3. The in situ atomic layer deposition scanning electron microscope of claim 1, wherein: and an observation window is arranged on the side wall of the cavity of the electron microscope and is made of transparent materials.
4. The in situ atomic layer deposition scanning electron microscope of claim 1, wherein: four ground feet are symmetrically arranged at the bottom of the rack, and the height of the ground feet can be adjusted.
5. The in situ atomic layer deposition scanning electron microscope of claim 4, wherein: the gyro wheel is installed to the frame bottom, the gyro wheel sets up in adjacent two between the lower margin.
6. The in situ atomic layer deposition scanning electron microscope of claim 2, wherein: four cushion blocks are symmetrically arranged at the bottom of the electron microscope cavity, and the electron microscope cavity is fixedly connected with the damping table through the cushion blocks.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010823490.0A CN111952138A (en) | 2020-08-17 | 2020-08-17 | In-situ atomic layer deposition scanning electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010823490.0A CN111952138A (en) | 2020-08-17 | 2020-08-17 | In-situ atomic layer deposition scanning electron microscope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111952138A true CN111952138A (en) | 2020-11-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010823490.0A Pending CN111952138A (en) | 2020-08-17 | 2020-08-17 | In-situ atomic layer deposition scanning electron microscope |
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| CN (1) | CN111952138A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1607636A (en) * | 2003-08-06 | 2005-04-20 | 应用材料有限公司 | Process stability monitoring using an integrated metrology tool |
| US20080274282A1 (en) * | 2007-02-14 | 2008-11-06 | Bent Stacey F | Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition |
| CN108461417A (en) * | 2018-01-17 | 2018-08-28 | 北京北方华创微电子装备有限公司 | Semiconductor equipment |
| CN109671666A (en) * | 2017-10-14 | 2019-04-23 | 应用材料公司 | For the ALD copper of BEOL interconnection and integrating for high temperature PVD copper deposition |
| CN110534405A (en) * | 2018-05-23 | 2019-12-03 | 台湾积体电路制造股份有限公司 | Handle the work station and method of workpiece |
| CN111033712A (en) * | 2017-08-03 | 2020-04-17 | 应用材料以色列公司 | Method and system for moving a substrate |
| CN111272792A (en) * | 2020-03-24 | 2020-06-12 | 深圳市速普仪器有限公司 | Pretreatment equipment for electron microscope sample |
-
2020
- 2020-08-17 CN CN202010823490.0A patent/CN111952138A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1607636A (en) * | 2003-08-06 | 2005-04-20 | 应用材料有限公司 | Process stability monitoring using an integrated metrology tool |
| US20080274282A1 (en) * | 2007-02-14 | 2008-11-06 | Bent Stacey F | Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition |
| CN111033712A (en) * | 2017-08-03 | 2020-04-17 | 应用材料以色列公司 | Method and system for moving a substrate |
| CN109671666A (en) * | 2017-10-14 | 2019-04-23 | 应用材料公司 | For the ALD copper of BEOL interconnection and integrating for high temperature PVD copper deposition |
| CN108461417A (en) * | 2018-01-17 | 2018-08-28 | 北京北方华创微电子装备有限公司 | Semiconductor equipment |
| CN110534405A (en) * | 2018-05-23 | 2019-12-03 | 台湾积体电路制造股份有限公司 | Handle the work station and method of workpiece |
| CN111272792A (en) * | 2020-03-24 | 2020-06-12 | 深圳市速普仪器有限公司 | Pretreatment equipment for electron microscope sample |
Non-Patent Citations (1)
| Title |
|---|
| G. JEEVANANDAM , ET AL.: "‘Cleanroom’ in SEM" * |
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Application publication date: 20201117 |