CN111883631A - Preparation method of UVC-LED light-emitting device - Google Patents
Preparation method of UVC-LED light-emitting device Download PDFInfo
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- CN111883631A CN111883631A CN202010852001.4A CN202010852001A CN111883631A CN 111883631 A CN111883631 A CN 111883631A CN 202010852001 A CN202010852001 A CN 202010852001A CN 111883631 A CN111883631 A CN 111883631A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000003292 glue Substances 0.000 claims abstract description 34
- 230000004907 flux Effects 0.000 claims abstract description 22
- 238000005476 soldering Methods 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 14
- 230000005496 eutectics Effects 0.000 claims description 36
- 238000004140 cleaning Methods 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 239000011265 semifinished product Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000009835 boiling Methods 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000001954 sterilising effect Effects 0.000 description 6
- 238000004659 sterilization and disinfection Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 4
- 238000012795 verification Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
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- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a preparation method of a UVC-LED luminescent device, which is characterized by comprising the following steps: s1, fixing a wafer on a support through soldering flux by die bonding, wherein the support comprises a base and a box dam, the bottom of the box dam is integrally connected with the base, and the soldering flux is added into a space surrounded by the box dam; parameters of the die bonder: the height of the scraper of the glue carrying disc is less than or equal to 1-2mm, the height distance from the origin of the dispensing head to the pulp grabbing position is between 950-. According to the invention, the baking temperature is found to have a crucial influence on the generation of bubbles through a plurality of experiments, and the technical scheme provides a set of heating program to reduce the baking temperature and prolong the time, so that the adhesive in the glue is uniformly diffused to the glass and the bracket, the final yield is high, and the problem of unqualified products caused by the generation of bubbles is greatly improved.
Description
Technical Field
The invention relates to the technical field of LED lamp sterilization, in particular to a preparation method of a UVC-LED light-emitting device.
Background
UV refers to ultraviolet ray, UVC is the C wave band in ultraviolet ray, the wavelength is between 100-280nm, but the wavelength below 200 nm is vacuum ultraviolet ray, so the wavelength of UVC passing through the atmosphere is between 200-275 nm.
UV can destroy the molecular structure of DNA (deoxyribonucleic acid) or RNA (ribonucleic acid) of microorganisms, so that bacteria can die or cannot reproduce, and the aim of sterilization is fulfilled. Among all ultraviolet rays, UVC, which is a short-wave ultraviolet ray, has the strongest sterilization effect, and thus is widely used in sterilization technology.
For example, conventional ultraviolet lamps have been used to emit light from mercury lamps, which are very dangerous, and the mercury lamps have been completely prohibited under Water Council. And the UVC LED is the only alternative scheme of relying on the spectrum as a novel ultraviolet sterilization mode. Because the ultraviolet light source belongs to pure physical sterilization and does not contain any harmful substance, the miniaturization characteristic of the UVC LED element brings more imagination space for application scenes, and most of the imagination space cannot be realized by the traditional mercury lamp. In addition, the UVCLED has the advantages of quick starting, more allowable switching times, available battery power supply and the like.
At present, three forms are packaged in a UVC LED production process: organic encapsulation, semi-inorganic encapsulation (also referred to as "near-inorganic encapsulation"), and all-inorganic encapsulation. At present, a semi-inorganic packaging product is adopted in the domestic mainstream market, mainly comprises a ceramic support with a cup and quartz glass, and the lens is placed by coating anti-ultraviolet glue on the edge area of a ceramic substrate with the cup. Specifically, the glue is dispensed on the top of the cup or the step, and then the quartz glass is covered for curing and bonding. In the process, how to control high heat management and airtightness has a crucial influence on the product quality; in the existing semi-inorganic packaging type process, a glass lens and a ceramic substrate with a cup are connected through glue to form a closed cavity. Because the closed cavity cannot be vacuumized, when the glue is thermally cured, air in the cavity is easily heated, expanded and overflowed to form bubbles, and an air channel is formed under severe conditions. At the moment, external water vapor and impurities can enter the product through the bubbles and the air channels, so that the materials such as wafers, substrates and the like are polluted, the air tightness of the product is seriously influenced, and the light emitting performance and the reliability are influenced. Therefore, a preparation method of the VC-LED light-emitting device is provided.
Disclosure of Invention
The invention mainly aims to provide a preparation method of a UVC-LED luminescent device, which can effectively solve the problems in the background art.
In order to achieve the purpose, the invention adopts the technical scheme that:
a preparation method of a UVC-LED light-emitting device comprises the following steps:
s1, die bonding
Fixing the wafer on a support through soldering flux, wherein the support comprises a base and a dam, the bottom of the dam is integrally connected with the base, and the soldering flux is added into a space enclosed by the dam; parameters of the die bonder: the height of the scraper of the glue carrying disc is less than or equal to 1-2mm, the height distance from the origin of the dispensing head to the pulp grabbing position is between 950-.
S2, eutectic crystal
Placing the semi-finished product subjected to S1 die bonding in a sample placing area of an eutectic machine, and carrying out eutectic baking according to the following procedures: temperature section 1: 70-90 ℃/40S, temperature section 2: 120-140 ℃/25S, temperature section 3: 140-: 140-: 240-: 240-: 310-: 310 and 330 ℃/500S, and finally cooling to 60 ℃; the temperature rising slope is 0.5-2 ℃/S; the flow rate of N2 introduced into each temperature section is controlled to be more than or equal to 25SCFH so as to exhaust air and prevent the eutectic layer from being secondarily oxidized;
s3, plasma cleaning
And (3) carrying out plasma cleaning on the semi-finished product subjected to S2 eutectic crystallization, wherein the plasma cleaning conditions are as follows: backpressure (mton) 50-80; 10-20 parts of argon (sscm); power (W) 180-; cleaning time (sec) 100-; the number of washing times is 1-2;
s4. glue dispensing
Dispensing the cleaned semi-finished product of S3;
s5. cover glass
Sleeving glass on the semi-finished product subjected to glue dispensing within 2 hours, wherein the glass is quartz glass;
s6, baking
The baking is segmented, specifically, the temperature is raised to 40 ℃ within 5min and then kept at 40 ℃ for 1 h; increasing the temperature to 50 ℃ within 5min, then keeping the temperature at 50 ℃ for 1h, increasing the temperature to 60 ℃ within 5min, then keeping the temperature at 60 ℃ for 1h, increasing the temperature to 130 ℃ within 5min, then keeping the temperature at 130 ℃ for 1 h;
s7, cutting;
and S8, detecting the material.
Further, the adding amount of the soldering flux is 1/4-1/2 of the wafer height, and the parameter requirements of the soldering flux are as follows: viscosity is more than or equal to 100KCPS, boiling point is between 180 and 240 DEG C
Preferably, the amount of the die bonding glue in the S1 is controlled to be 1/3-1/2.
Preferably, the support is an aluminum nitride ceramic substrate, the surface of the support is plated with copper, nickel and gold, wherein the copper is more than 65+/-10u, the nickel is more than 3u, and the Au is 0.075u, the support is cooled for 20-30min at room temperature after being preheated for 15min at 130 ℃ for standby after being subjected to plasma cleaning before crystal solidification, and the wafer is arranged in the center of the support.
Preferably, one side of the wafer is also provided with a susceptance diode, and the susceptance is a Si substrate.
Furthermore, the eutectic area of the wafer welding points during eutectic of S2 is required to be more than 3/4 of the total area.
Further, the glue used in the S4 glue dispensing process is SE-125U 2.
Compared with the prior art, the invention has the following beneficial effects:
the method has the advantages that parameters, particularly temperature parameters, related in main process steps are optimized, the rejection rate of the existing process is high, particularly the bubble rate is high, and the temperature of the bracket and a wafer which are contacted with each other is sensed smoothly in the eutectic period, so that the bracket is protected in the whole process, and the bracket is not deformed (the deformation can influence the subsequent dispensing); then, the wafer needs to be heated slowly, the heating rate born by the wafer can not be increased more than the wafer cost, and the wafer also has the function of protecting the UVC wafer; in addition, the problem of high bubble rate is not solved in the prior art, which process step is unclear, and the baking temperature has a crucial influence on the bubbles through multiple experiments;
and secondly, the qualification rate of the prepared UVC-LED can reach a higher level by limiting the parameter standards of all materials, adjusting and optimizing all process parameters and optimizing the process flow.
Drawings
FIG. 1 is a schematic view of a normal bubble product;
FIG. 2 is a schematic view of a defective bubble product;
fig. 3 is a schematic diagram of the result of the glass knock inspection.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
Example 1
A preparation method of a UVC-LED light-emitting device comprises the following steps:
s1, die bonding: fixing a wafer on a support through a soldering flux, wherein the support comprises a base and a box dam, the bottom of the box dam is integrally connected with the base, the support is an aluminum nitride ceramic substrate, the surface of the support is plated with copper, nickel and gold, the copper is more than 65+/-10u, the nickel is more than 3u, and the Au is 0.075 u;
adding soldering flux into the space enclosed by the dam, wherein the adding amount of the soldering flux is 1/2 of the height of the wafer, and the parameter requirements of the soldering flux are as follows: viscosity = 130KCPS, boiling point at 180 ℃;
parameters of the die bonder: the height of the scraper of the glue carrying disc is less than or equal to 1-2mm, the height distance from the origin of the glue dispensing head to the pulp grabbing position is between 950-; the quantity of die bonding glue in the S1 is controlled to be 1/3, and glue is needed to be fed to four corners and four sides of the wafer;
s2, eutectic crystal: placing the semi-finished product subjected to S1 die bonding in a sample placing area of an eutectic machine, wherein the eutectic area of a welding point of a wafer is required to be more than 3/4 of the total area during eutectic, and carrying out eutectic baking according to the following procedures:
temperature section 1: the temperature is increased from room temperature to 70 ℃ within 40S;
temperature section 2: the temperature rises to 120 ℃ in 25S;
temperature section 3: the temperature rises to 140 ℃ in 30S;
temperature section 4: maintaining at 140 deg.C for 50S;
temperature section 5: the temperature rises to 240 ℃ in 50S;
temperature section 6: maintaining at 240 deg.c for 100S;
temperature section 7: the temperature rose to 310 ℃ in 40S;
temperature section 8: maintaining at 310 deg.C for 500S, and cooling to 60 deg.C; the flow rate of N2 introduced into each temperature section is controlled to be more than or equal to 25SCFH so as to exhaust air and prevent the eutectic layer from being secondarily oxidized;
s3, plasma cleaning: and (3) carrying out plasma cleaning on the semi-finished product subjected to S2 eutectic crystallization, wherein the plasma cleaning conditions are as follows: backpressure (mton) 50; argon (sscm) 10; a power (W) 180; cleaning time (sec) 100; the number of washing times is 1;
s4, dispensing: dispensing the cleaned semi-finished product of S3, wherein the glue is SE-125U 2;
s5, glass sleeving: sleeving the dispensed semi-finished product with quartz glass within 2 hours;
s6, baking: the baking is segmented, specifically, the temperature is raised to 40 ℃ within 5min and then kept at 40 ℃ for 1 h; increasing the temperature to 50 ℃ within 5min, then keeping the temperature at 50 ℃ for 1h, increasing the temperature to 60 ℃ within 5min, then keeping the temperature at 60 ℃ for 1h, increasing the temperature to 130 ℃ within 5min, then keeping the temperature at 130 ℃ for 1 h;
s7, cutting: cutting the finished product prepared in the step S6 into single UVC-LEDs;
and S8, detecting the material.
Example 2
A preparation method of a UVC-LED light-emitting device comprises the following steps:
s1, die bonding: fixing a wafer on a support through a soldering flux, wherein the support comprises a base and a box dam, the bottom of the box dam is integrally connected with the base, the support is an aluminum nitride ceramic substrate, the surface of the support is plated with copper, nickel and gold, the copper is more than 65+/-10u, the nickel is more than 3u, and the Au is 0.075 u;
adding soldering flux into the space enclosed by the dam, wherein the adding amount of the soldering flux is 1/2 of the height of the wafer, and the parameter requirements of the soldering flux are as follows: viscosity = 130KCPS, boiling point at 200 ℃;
parameters of the die bonder: the height of the scraper of the glue carrying disc is less than or equal to 1-2mm, the height distance from the origin of the glue dispensing head to the pulp grabbing position is between 950-; the quantity of die bonding glue in the S1 is controlled to be 1/2, and glue is needed to be fed to four corners and four sides of the wafer;
s2, eutectic crystal: placing the semi-finished product subjected to S1 die bonding in a sample placing area of an eutectic machine, wherein the eutectic area of a welding point of a wafer is required to be more than 3/4 of the total area during eutectic, and carrying out eutectic baking according to the following procedures:
temperature section 1: the temperature is increased from room temperature to 80 ℃ within 40S;
temperature section 2: the temperature rose to 130 ℃ in 25S;
temperature section 3: the temperature rises to 150 ℃ in 30S;
temperature section 4: maintaining at 150 deg.C for 50S;
temperature section 5: the temperature rises to 250 ℃ within 50S;
temperature section 6: maintaining at 250 deg.C for 100S;
temperature section 7: the temperature rises to 320 ℃ in 40S;
temperature section 8: maintaining at 320 deg.C for 500S, and cooling to 60 deg.C; the flow rate of N2 introduced into each temperature section is controlled to be more than or equal to 25SCFH so as to exhaust air and prevent the eutectic layer from being secondarily oxidized;
s3, plasma cleaning: and (3) carrying out plasma cleaning on the semi-finished product subjected to S2 eutectic crystallization, wherein the plasma cleaning conditions are as follows: backpressure (mton) 70; argon (sscm) 15; a power (W) 190; a cleaning time (sec) 130; the number of washing times is 2;
s4, dispensing: dispensing the cleaned semi-finished product of S3, wherein the glue is SE-125U 2;
s5, glass sleeving: sleeving the dispensed semi-finished product with quartz glass within 2 hours;
s6, baking: the baking is segmented, specifically, the temperature is raised to 40 ℃ within 5min and then kept at 40 ℃ for 1 h; increasing the temperature to 50 ℃ within 5min, then keeping the temperature at 50 ℃ for 1h, increasing the temperature to 60 ℃ within 5min, then keeping the temperature at 60 ℃ for 1h, increasing the temperature to 130 ℃ within 5min, then keeping the temperature at 130 ℃ for 1 h;
s7, cutting: cutting the finished product prepared in the step S6 into single UVC-LEDs;
and S8, detecting the material.
Example 3
A preparation method of a UVC-LED light-emitting device comprises the following steps:
s1, die bonding: fixing a wafer on a support through a soldering flux, wherein the support comprises a base and a box dam, the bottom of the box dam is integrally connected with the base, the support is an aluminum nitride ceramic substrate, the surface of the support is plated with copper, nickel and gold, the copper is more than 65+/-10u, the nickel is more than 3u, and the Au is 0.075 u;
adding soldering flux into the space enclosed by the dam, wherein the adding amount of the soldering flux is 1/2 of the height of the wafer, and the parameter requirements of the soldering flux are as follows: viscosity = 130KCPS, boiling point at 200 ℃;
parameters of the die bonder: the height of the scraper of the glue carrying disc is less than or equal to 1-2mm, the height distance from the origin of the glue dispensing head to the pulp grabbing position is between 950-; the quantity of die bonding glue in the S1 is controlled to be 1/2, and glue is needed to be fed to four corners and four sides of the wafer;
s2, eutectic crystal: placing the semi-finished product subjected to S1 die bonding in a sample placing area of an eutectic machine, wherein the eutectic area of a welding point of a wafer is required to be more than 3/4 of the total area during eutectic, and carrying out eutectic baking according to the following procedures:
temperature section 1: the temperature is increased from room temperature to 90 ℃ within 40S;
temperature section 2: the temperature rises to 140 ℃ in 25S;
temperature section 3: the temperature rises to 160 ℃ in 30S;
temperature section 4: maintaining at 160 deg.C for 50S;
temperature section 5: the temperature rises to 260 ℃ within 50S;
temperature section 6: maintaining at 260 deg.C for 100S;
temperature section 7: the temperature rose to 330 ℃ in 40S;
temperature section 8: maintaining at 330 deg.C for 500S, and cooling to 60 deg.C; the flow rate of N2 introduced into each temperature section is controlled to be more than or equal to 25SCFH so as to exhaust air and prevent the eutectic layer from being secondarily oxidized;
s3, plasma cleaning: and (3) carrying out plasma cleaning on the semi-finished product subjected to S2 eutectic crystallization, wherein the plasma cleaning conditions are as follows: back pressure (mton) 80; argon (sscm) 20; a power (W) 250; cleaning time (sec) 150; the number of washing times is 2;
s4, dispensing: dispensing the cleaned semi-finished product of S3, wherein the glue is SE-125U 2;
s5, glass sleeving: sleeving the dispensed semi-finished product with quartz glass within 2 hours;
s6, baking: the baking is segmented, specifically, the temperature is raised to 40 ℃ within 5min and then kept at 40 ℃ for 1 h; increasing the temperature to 50 ℃ within 5min, then keeping the temperature at 50 ℃ for 1h, increasing the temperature to 60 ℃ within 5min, then keeping the temperature at 60 ℃ for 1h, increasing the temperature to 130 ℃ within 5min, then keeping the temperature at 130 ℃ for 1 h;
s7, cutting: cutting the finished product prepared in the step S6 into single UVC-LEDs;
and S8, detecting the material.
Comparative example 1
S5 the glass is sleeved and then dried in the oven for 4.5h at 150 ℃, and the rest is the same as the example 1.
Comparative example 2
Temperature section 1: the temperature is increased from room temperature to 90 ℃ within 40S;
temperature section 2: the temperature rises to 140 ℃ in 25S;
temperature section 3: the temperature rises to 160 ℃ in 30S;
temperature section 4: the temperature rises to 260 ℃ within 50S;
temperature section 5: the temperature rose to 330 ℃ in 40S;
temperature section 6: cooling to 150 ℃ in 60S;
temperature section 7: the temperature was reduced to 25 ℃ in 30 seconds, as in example 1.
Quality qualification identification
And (3) detecting correlation: detection under microscope and detection under X-RAY
Firstly, detecting whether bubbles exist or not and the number of the bubbles under a microscope, taking 200pcs of single UVC-LED cut in examples 1-3, comparative example 1 and comparative example 2, and detecting results are shown in the following table, wherein specific structures of normal bubbles and defective bubbles are respectively shown in a figure 1 and a figure 2;
| number of assays/pcs | Number of bubbles/pcs | Rate of bubbles | |
| Example 1 | 200 | 2 | 1.02% |
| Example 2 | 200 | 3 | 1.53% |
| Example 3 | 200 | 0 | 1.23% |
| Comparative example 1 | 200 | 5 | 3.45% |
| Comparative example 2 | 200 | 6 | 2.89% |
Secondly, performing simulation verification 3 times by using an SMT return air welding machine, and checking the bonding condition ok of the warped glass in the embodiments 1 to 3, wherein the specific result is shown in FIG. 3;
randomly drawing 20pcs of examples 1-3 for 24h red ink verification without penetration, randomly drawing 20cps of comparative example 1 and comparative example 2 for 24h red ink verification, wherein 1-2 samples slightly penetrate;
and drop verification (20 cm height for 3 times), testing the UVC-LED200cps prepared in the examples 1-3, the comparative example 1 and the comparative example 2, and detecting that the glass of the examples 1-3 is not bonded and is not dropped, the glass bonding dropping rate of the comparative example 1 is 1 percent, and the glass bonding dropping rate of the comparative example 2 is 0.5 percent.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. A preparation method of a UVC-LED luminescent device is characterized by comprising the following steps:
s1, die bonding
Fixing the wafer on a support through soldering flux, wherein the support comprises a base and a dam, the bottom of the dam is integrally connected with the base, and the soldering flux is added into a space enclosed by the dam; parameters of the die bonder: the height of the scraper of the glue carrying disc is less than or equal to 1-2mm, the height distance from the origin of the glue dispensing head to the pulp grabbing position is between 950-;
s2, eutectic crystal
Placing the semi-finished product subjected to S1 die bonding in a sample placing area of an eutectic machine, and carrying out eutectic baking according to the following procedures: temperature section 1: 70-90 ℃/40S, temperature section 2: 120-140 ℃/25S, temperature section 3: 140-: 140-: 240-: 240-: 310-: 310 and 330 ℃/500S, and finally cooling to 60 ℃; the temperature rising slope is 0.5-2 ℃/S; the flow rate of N2 introduced into each temperature section is controlled to be more than or equal to 25SCFH so as to exhaust air and prevent the eutectic layer from being secondarily oxidized;
s3, plasma cleaning
And (3) carrying out plasma cleaning on the semi-finished product subjected to S2 eutectic crystallization, wherein the plasma cleaning conditions are as follows: backpressure (mton) 50-80; 10-20 parts of argon (sscm); power (W) 180-; cleaning time (sec) 100-; the number of washing times is 1-2;
s4. glue dispensing
Dispensing the cleaned semi-finished product of S3;
s5. cover glass
Sleeving glass on the semi-finished product subjected to glue dispensing within 2 hours;
s6, baking
The baking is segmented, specifically, the temperature is raised to 40 ℃ within 5min and then kept at 40 ℃ for 1 h; increasing the temperature to 50 ℃ within 5min, then keeping the temperature at 50 ℃ for 1h, increasing the temperature to 60 ℃ within 5min, then keeping the temperature at 60 ℃ for 1h, increasing the temperature to 130 ℃ within 5min, then keeping the temperature at 130 ℃ for 1 h;
s7, cutting;
and S8, detecting the material.
2. The method of manufacturing a UVC-LED light emitting device according to claim 1, wherein: the adding amount of the soldering flux is 1/4-1/2 of the wafer height, and the parameter requirements of the soldering flux are as follows: the viscosity is more than or equal to 100KCPS, and the boiling point is between 180 and 240 ℃.
3. The method of manufacturing a UVC-LED light emitting device according to claim 1, wherein: the quantity of the crystal-fixing glue in the S1 is controlled to be 1/3-1/2.
4. The method of manufacturing a UVC-LED light emitting device according to claim 1, wherein: the support is an aluminum nitride ceramic substrate, the surface of the support is plated with copper, nickel and gold, wherein the copper is more than 65+/-10u, the nickel is more than 3u, and the Au is 0.075u, the support is subjected to plasma cleaning before crystal fixing, then is preheated at 130 ℃ for 15min and then is cooled at room temperature for 20-30min for standby application, and the wafer is arranged in the center of the support.
5. The method of manufacturing a UVC-LED light emitting device according to claim 1, wherein: and one side of the wafer is also provided with a susceptance diode, and the susceptance is a Si substrate.
6. The method of manufacturing a UVC-LED light emitting device according to claim 1, wherein: and during S2 eutectic, the eutectic area of the welding points of the wafer is required to be more than 3/4 of the total area.
7. The method of making any of the UVC-LED light emitting device of claims 1-6, wherein: the glue used in the S4 glue dispensing process is SE-125U 2.
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