CN111864105A - Display panel and preparation method thereof - Google Patents
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- CN111864105A CN111864105A CN202010654658.XA CN202010654658A CN111864105A CN 111864105 A CN111864105 A CN 111864105A CN 202010654658 A CN202010654658 A CN 202010654658A CN 111864105 A CN111864105 A CN 111864105A
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- 238000002360 preparation method Methods 0.000 title abstract description 15
- 239000011159 matrix material Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000002245 particle Substances 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 19
- 230000003667 anti-reflective effect Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 230000031700 light absorption Effects 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000028161 membrane depolarization Effects 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 221
- 239000010408 film Substances 0.000 description 12
- 239000010409 thin film Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 7
- 230000001788 irregular Effects 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- WSQYJDCCFQPFJC-UHFFFAOYSA-N ac1lcry1 Chemical compound [Pb+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 WSQYJDCCFQPFJC-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- PMJMHCXAGMRGBZ-UHFFFAOYSA-N subphthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(=N3)N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C3=N1 PMJMHCXAGMRGBZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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Abstract
The application provides a display panel and a preparation method thereof, display panel includes array substrate, luminescent layer and antireflection structure, the luminescent layer set up in array substrate's upper surface, the luminescent layer includes a plurality of illuminating parts, antireflection structure set up in on the luminescent layer, antireflection structure include the black matrix layer that the array set up with set up in the diffusion barrier between the black matrix layer, the diffusion barrier with the illuminating part one-to-one sets up, scattering particles have in the diffusion barrier. The black matrix layer and the scattering layer are arranged in the display panel to serve as an antireflection structure, so that the depolarization of the display panel is realized, the preparation process and the production cost of the display panel are reduced, the reflection of ambient light is reduced, and the yield of the display panel is improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel and a preparation method thereof.
Background
At present, a color film is usually used to replace a polarizer, and a basic structure of the color film includes a red filter portion, a blue filter portion, a green filter portion, and a black matrix, and corresponds to red sub-pixel, green sub-pixel, and blue sub-pixel units of a light emitting diode, respectively, so as to form a color film functional layer. The color film is usually prepared by spin coating or inkjet printing, and still has a high reflection effect on the light emitting diode and the ambient light due to the nature of the color film, the cost for preparing the color film is high, the preparation process is complex, and the current preparation method for the color film can reduce the yield of the color film, so that the yield of the display panel is reduced.
Disclosure of Invention
The application provides a display panel and a preparation method thereof, which are used for reducing the reflectivity of the panel to ambient light, reducing the production cost, simplifying the preparation process and improving the yield of the display panel.
The application provides a display panel, including:
an array substrate;
the light-emitting layer is arranged on the upper surface of the array substrate and comprises a plurality of light-emitting parts; and
the reflection reducing structure is arranged on the light emitting layer and comprises a black matrix layer and a scattering layer, the black matrix layer is arranged in an array mode, the scattering layer is arranged between the black matrix layer and the light emitting portion in a one-to-one mode, and scattering particles are arranged in the scattering layer.
In the display panel provided by the application, the area ratio of the black matrix layer in the display panel is more than 90%.
In the display panel provided by the present application, the display panel further includes a first antireflection layer disposed on an upper surface of the light emitting layer.
In the display panel provided by the present application, the first antireflection layer includes a first portion and a second portion, the second portion is disposed on an upper surface of the first portion, the first portion is a cathode, and the second portion is an oxidized cathode.
In the display panel that this application provided, display panel still includes negative pole and light-absorbing layer, the negative pole set up in on the luminescent layer, light-absorbing layer set up in the luminescent layer or on the negative pole.
In the display panel provided by the present application, the scattering layer further includes scattering microstructures, and the scattering microstructures are located on the upper surface of the scattering layer.
In the display panel provided by the present application, the display panel further includes a second antireflection layer, and the second antireflection layer is disposed on the antireflection structure.
The application also provides a preparation method of the display panel, which comprises the following steps:
providing an array substrate;
arranging a light-emitting layer on the array substrate, wherein the light-emitting layer comprises a plurality of light-emitting parts; and
form antireflection structure on the luminescent layer, antireflection structure including array setting black matrix layer with set up in the scattering layer between the black matrix layer, the scattering layer with the luminescent part one-to-one sets up, scattering particle has in the scattering layer.
In the preparation method of the display panel provided by the present application, after the step of providing the light emitting layer on the array substrate, where the light emitting layer includes a plurality of light emitting portions, a black matrix layer and a scattering layer disposed between the black matrix layers are disposed in the array substrate and the light emitting layer in an array, where the scattering layer and the light emitting portions are disposed in a one-to-one correspondence, and before the step of providing scattering particles in the scattering layer, the method further includes:
Depositing a first antireflection layer material on the light emitting layer, oxidizing the first antireflection layer material to form a first antireflection layer, wherein the first antireflection layer comprises a first part and a second part, the second part is arranged on the upper surface of the first part, the first part is a cathode, and the second part is an oxidized cathode.
In the method for manufacturing a display panel provided by the present application, after the step of providing a light emitting layer on the array substrate, the light emitting layer includes a plurality of light emitting portions, an antireflection structure is formed on the light emitting layer, the antireflection structure includes an array black matrix layer and a scattering layer disposed between the black matrix layers, the scattering layer is disposed in one-to-one correspondence with the light emitting portions, and before the step of providing scattering particles in the scattering layer, the method further includes:
forming a cathode on an upper surface of the light emitting layer;
arranging a light absorption material on the cathode to form a light absorption layer; or
Arranging a light absorption material on the upper surface of the light emitting layer to form a light absorption layer;
and forming a cathode on the upper surface of the light absorbing layer.
The application provides a display panel and a preparation method thereof, and the black matrix layer and the scattering layer are arranged in the display panel to serve as an antireflection structure, so that the depolarization of the display panel is realized, the preparation process and the production cost of the display panel are reduced, the reflection of ambient light is reduced, and the yield of the display panel is improved.
Drawings
In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a cross-sectional view of a first structure of a display panel provided in the present application.
Fig. 2 is a cross-sectional view of a second structure of a display panel provided in the present application.
Fig. 3 is a cross-sectional view of a third structure of a display panel provided in the present application.
Fig. 4 is a cross-sectional view of a fourth structure of the display panel provided in the present application.
Fig. 5 is a cross-sectional view of a fifth structure of a display panel provided in the present application.
Fig. 6 is a cross-sectional flow diagram illustrating a method for manufacturing a display panel according to the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1, fig. 1 is a cross-sectional view of a first structure of a display panel provided in the present application. The present application provides a display panel 10. The display panel 10 includes an array substrate 100, a light emitting layer 200, and an anti-reflection structure 300.
The array substrate 100 includes a substrate 110 and a thin film transistor 120. The thin film transistor 120 is disposed on the substrate 110. The thin film transistor 120 includes an active layer 121, a gate electrode layer 122, a gate insulating layer 123, a source electrode 124, and a drain electrode 125. The active layer 121 is disposed on the substrate 110. The active layer 121 includes a first region 1211, a second region 1212, and a third region 1213. The first region 1211 and the third region 1213 are disposed at both sides of the second region 1212. The first region 1211 is doped P-type. The third region 1213 is doped N-type. The gate layer 122 is disposed on the active layer 121. The gate insulating layer 123 is disposed on the gate layer 122. The source electrode 124 is disposed on one side of the active layer 121 and electrically connected to the active layer 121. The drain electrode 125 is disposed on the other side of the active layer 121 and electrically connected to the active layer 121.
In one embodiment, the array substrate 100 further includes a planarization layer 130. The planarization layer 130 is disposed on the substrate 110 and the thin film transistor 120. The planarization layer 130 includes a first via 131. The first via 131 penetrates the planarization layer 130 to expose the drain 125.
In one embodiment, the display panel 10 further includes an anode 400. The anode 400 is disposed in the first through hole 131. The anode 400 is electrically connected to the drain 125.
In one embodiment, the display panel 10 further includes a pixel defining layer 500. The pixel defining layer 500 is disposed on the upper surface of the planarization layer 130 and the upper surface of the anode 400. The pixel definition layer 500 includes a second via 501. The second via hole 501 penetrates the pixel defining layer 500 to expose the anode 400. The ratio of the opening area of the pixel defining layer 500 to the area of the display panel 10 is less than 15% or 20%. Specifically, the ratio of the opening area of the pixel defining layer 500 to the area of the display panel 10 may be 5%, 7%, 9%, 10%, 13%, 14%, 16%, 18%, and the like. The opening area of the pixel defining layer 500 refers to an upper opening area of the pixel defining layer 500.
The light emitting layer 200 is disposed in the second via 501 and electrically connected to the anode 400. The light emitting layer 200 includes a plurality of light emitting portions 210.
In one embodiment, the display panel 10 further includes a cathode 600 and a light absorbing layer 700. The cathode 600 is disposed on the light emitting layer 200. The light absorbing layer 700 is disposed on the cathode 600. The light absorbing layer material comprises C 60And one or more of chlorinated subphthalocyanine boron and phthalocyanine lead. The anode 400, the light emitting layer 200, and the cathode 600 constitute a self-luminous light emitting diode device.
In this application, set up the light-absorbing layer on the negative pole for weaken emitting diode to the reflection of external environment light, avoid the interference of light.
In one embodiment, the display panel 10 further includes an encapsulation layer 800. The encapsulation layer 800 is disposed on the pixel defining layer 500 and the light absorbing layer 700. The encapsulation layer 800 includes a first inorganic layer 810, an organic layer 820, and a second inorganic layer 830. The first inorganic layer 810 is disposed on the pixel defining layer 500 and the light absorbing layer 700. The organic layer 820 is disposed on the upper surface of the first inorganic layer 810. The second inorganic layer 830 is disposed on the upper surface of the organic layer 820.
The antireflection junctionThe structure 300 is disposed on the light emitting layer 200. The anti-reflective structure 300 includes black matrix layers 310 arranged in an array and a scattering layer 320 arranged between the black matrix layers 310. The area ratio of the black matrix layer 310 in the display panel 10 is greater than 90%. Specifically, the area ratio of the black matrix layer 310 in the display panel 10 may be 92%, 95%, 97%, 98%, and the like. The scattering layers 320 are provided in one-to-one correspondence with the light emitting portions 210. The material of the scattering layer 320 is a transparent material. The scattering layer 320 has scattering particles 321 therein. The scattering particles 321 are dispersed in the scattering layer 320. The scattering particles 321 are made of SiO 2And TiO2One kind of (1). The shape of the scattering particles 321 may be one or a combination of a regular geometric figure and an irregular geometric figure. Regular geometric figures include spheres, hemispheres, squares, triangles, and the like. In the present embodiment, the scattering particles 321 have a spherical shape. When light passes through the scattering particles, light is scattered, and the aim of antireflection is achieved.
In one embodiment, the scattering layer 320 further includes scattering microstructures 322. The scattering microstructures 322 are located on the upper surface of the scattering layer 320. The shape of the scattering microstructures 322 can be either a regular geometric figure or an irregular geometric figure or a combination of both. Regular geometric figures include spheres, hemispheres, squares, triangles, and the like. In this embodiment, the scattering microstructures 322 are in the shape of a regular geometric figure, and are in the shape of a hemisphere. When the light is scattered into the structure, the light is further scattered. Thereby achieving the purpose of antireflection.
In this application, form antireflection structure with black matrix layer and scattering layer, black matrix layer and scattering layer have all functions of various rete to, black matrix layer is arranged in absorbing the light in the ambient light, has reduced the reflectivity of display panel non-luminous region, and the scattering layer is used for reducing reflection with the ambient light on the scattering layer and handles, reduces the luminous flux that light incided to in the emitting diode, need not to set up various rete structure in addition, has reduced manufacturing cost.
In one embodiment, the display panel 10 further includes a passivation layer 900. The passivation layer 900 is disposed on the upper surface of the anti-reflective structure 300. The passivation layer 900 serves to protect the structures in the display panel 10 and has a planarization effect on the structures of the display panel.
In an embodiment, the display panel 10 further includes a second anti-reflective layer 1000. The second anti-reflective layer 1000 is disposed on an upper surface of the passivation layer 900. The second anti-reflective layer 1000 is used to reduce the reflectivity of ambient light.
Referring to fig. 2, fig. 2 is a cross-sectional view of a second structure of a display panel provided in the present application. Fig. 2 is different from fig. 1 in that: the scattering microstructures 322 are shaped in an irregular geometric pattern.
Referring to fig. 3, fig. 3 is a cross-sectional view of a third structure of a display panel provided in the present application. Fig. 3 is different from fig. 1 in that: the light absorbing layer 700 is disposed on the upper surface of the light emitting layer 200. The cathode 600 is disposed on the upper surface of the light absorbing layer 700.
Referring to fig. 4, fig. 4 is a cross-sectional view of a fourth structure of the display panel provided in the present application. Fig. 4 is different from fig. 1 in that: no light absorbing layer 700 is provided on the cathode 600. A first anti-reflective layer 1100 is disposed on the upper surface of the light emitting layer 200. The first anti-reflective layer 1100 includes a first portion 1110 and a second portion 1120. The second portion 1120 is disposed on an upper surface of the first portion 1110. The first portion 1110 is a cathode, i.e., the cathode 600 in fig. 1. The second portion 1120 is an oxidation cathode. The first antireflection layer is arranged on the upper surface of the light emitting layer, and the first part and the second part are made of the same material, the first part is used for being electrically connected with a structure in the panel, and the second part is used for reducing the reflectivity of a light emitting area of the light emitting diode, so that the production cost is reduced.
Referring to fig. 5, fig. 5 is a cross-sectional view of a fifth structure of a display panel provided by the present application. Fig. 5 is different from fig. 1 in that: the shape of the scattering particles 321 in fig. 5 is an irregular geometric figure. Other structures are shown in fig. 1, and are not described herein.
The application provides a display panel, through set up black matrix layer and scattering layer as antireflection structure in display panel, realize display panel's depolarization ization, reduce display panel's preparation process and manufacturing cost to reduce the reflection to ambient light and improve display panel's yield.
Referring to fig. 1 and fig. 6, fig. 1 is a cross-sectional view of a first structure of a display panel provided in the present application. Fig. 6 is a cross-sectional flow diagram illustrating a method for manufacturing a display panel according to the present disclosure. The present application further provides a method for manufacturing a display panel, where the method for manufacturing the display panel 10 shown in fig. 1 includes the following steps:
The array substrate 100 includes a substrate 110 and a thin film transistor 120. The thin film transistor 120 is disposed on the substrate 110. The thin film transistor 120 includes an active layer 121, a gate electrode layer 122, a gate insulating layer 123, a source electrode 124, and a drain electrode 125. The active layer 121 is disposed on the substrate 110. The active layer 121 includes a first region 1211, a second region 1212, and a third region 1213. The first region 1211 and the third region 1213 are disposed at both sides of the second region 1212. The first region 1211 is doped P-type. The third region 1213 is doped N-type. The gate layer 122 is disposed on the active layer 121. The gate insulating layer 123 is disposed on the gate layer 122. The source electrode 124 is disposed on one side of the active layer 121 and electrically connected to the active layer 121. The drain electrode 125 is disposed on the other side of the active layer 121 and electrically connected to the active layer 121.
After the step of providing an array substrate 100, further comprising steps 21, 22 and 23:
step 21, a flat layer 130 is disposed on the substrate 110 and the thin film transistor 120. The planarization layer 130 includes a first via 131. The first via 131 penetrates the planarization layer 130 to expose the drain 125.
And 22, arranging an anode material in the first through hole 131 to form an anode 400. The anode 400 is electrically connected to the drain 125.
Step 23, disposing a pixel defining layer material on the upper surface of the planarization layer 130 and the upper surface of the anode 400 to form a pixel defining layer 500. The pixel definition layer 500 includes a second via 501. The second via hole 501 penetrates the pixel defining layer 500 to expose the anode 400. The ratio of the opening area of the pixel defining layer 500 to the area of the display panel 10 is less than 10%. The opening area of the pixel defining layer 500 refers to an upper opening area of the pixel defining layer 500.
After the step of disposing the light emitting layer 200 on the array substrate 100, the method further includes steps 31 and 32:
Step 31, forming a cathode 600 on the upper surface of the light emitting layer 200. A light absorbing layer material is disposed on the cathode 600 to form a light absorbing layer 700. The light absorbing layer material comprises C60And one or more of chlorinated subphthalocyanine boron and phthalocyanine lead. The anode 400, the light emitting layer 200, and the cathode 600 constitute a self-luminous light emitting diode device. And the light absorption layer is arranged on the cathode and used for weakening the reflection of the light-emitting diode to the external environment light and avoiding the interference of light.
Step 32, sequentially stacking a first inorganic layer 810, an organic layer 820 and a second inorganic layer 830 on the pixel defining layer 500 and the light absorbing layer 700. The first inorganic layer 810, the organic layer 820, and the second inorganic layer 830 constitute an encapsulation layer 800. For protecting structures in the display panel.
The area ratio of the black matrix layer 310 in the display panel 10 is greater than 90%. Specifically, the black matrix layer 310 is on the display panel The area ratio of 10 may be one of 92%, 95%, 97%, 98%, and the like. The scattering layers 320 are provided in one-to-one correspondence with the light emitting portions 210. The scattering layer 320 has scattering particles 321 therein. The scattering particles 321 are dispersed in the scattering layer 320. The material of the scattering particles 321 is SO2And TiO2One kind of (1). The shape of the scattering particles 321 may be one or a combination of a regular geometric figure and an irregular geometric figure. Regular geometric figures include spheres, hemispheres, squares, triangles, and the like. In the present embodiment, the scattering particles 321 have a spherical shape. The scattering layer 320 has scattering microstructures 322 on its upper surface. The shape of the scattering microstructures 322 can be either a regular geometric figure or an irregular geometric figure or a combination of both. Regular geometric figures include spheres, hemispheres, squares, triangles, and the like. In this embodiment, the scattering microstructures 322 are in the shape of a regular geometric figure, and are in the shape of a hemisphere.
Forming an anti-reflection structure 300 on the light emitting layer, wherein the anti-reflection structure 300 includes a black matrix layer 310 and a scattering layer 320 disposed between the black matrix layer 310, the scattering layer 320 is disposed in a one-to-one correspondence with the light emitting portions 210, and after the step of providing scattering particles 321 in the scattering layer 320, steps 41 and 42 are further included:
And 41, forming a passivation layer 900 on the upper surface of the anti-reflection structure 300. The passivation layer 900 serves to protect the structures in the display panel 10 and has a planarization effect on the structures of the display panel.
Step 42, forming a second anti-reflective layer 1000 on the upper surface of the passivation layer 900. The second anti-reflective layer 1000 is used to reduce the reflectivity of ambient light.
Referring to fig. 4, fig. 4 is a cross-sectional view of a fourth structure of the display panel provided in the present application. Note that the structure shown in fig. 4 is different from that shown in fig. 1 in that: in forming the structure of fig. 4, step 30 is not followed by step 31, and step 31 is replaced by step 33, specifically step 32 is to provide a first anti-reflective layer material on the light-emitting layer 200, and the first anti-reflective layer material is subjected to plasma treatment or micro-oxidation treatment in a vacuum chamber to form a first anti-reflective layer 1100 having a first portion 1110 and a second portion 1120. The second portion 1120 is disposed on an upper surface of the first portion 1110. The first portion 1110 is a cathode. The second portion 1120 is an oxidation cathode. The first antireflection layer is arranged on the upper surface of the light emitting layer, and the first part and the second part are made of the same material, the first part is used for being electrically connected with a structure in the panel, and the second part is used for reducing the reflectivity of a light emitting area of the light emitting diode, so that the production cost is reduced.
The application provides a display panel and a preparation method thereof.A light absorption layer is arranged on a cathode and is used for weakening the reflection of a light-emitting diode to external environment light and avoiding the interference of light; the black matrix layer and the scattering layer form an antireflection structure, the black matrix layer and the scattering layer have all functions of a color film layer, the black matrix layer is used for absorbing light rays in ambient light, the reflectivity of a non-light-emitting region in the display panel is reduced, the scattering layer is used for performing antireflection treatment on the ambient light on the scattering layer, the luminous flux of the light rays entering the light-emitting diode is reduced, a color film structure is not needed to be additionally arranged, the cost of a color film material is reduced, and further the production cost is reduced; the high-ratio black matrix layer is combined with the low-reflection light-emitting diode, so that the polarizer removal of the whole display panel is realized; the black matrix layer and the scattering layer are used as the antireflection structure, so that the manufacturing cost of the color film is reduced, three wet process or ink-jet printing processes are reduced, the manufacturing process is simplified, and the yield of the display panel is improved.
The foregoing provides a detailed description of embodiments of the present application, and the principles and embodiments of the present application have been described herein using specific examples, which are presented solely to aid in the understanding of the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A display panel, comprising:
an array substrate;
the light-emitting layer is arranged on the upper surface of the array substrate and comprises a plurality of light-emitting parts; and
the reflection reducing structure is arranged on the light emitting layer and comprises a black matrix layer and a scattering layer, the black matrix layer is arranged in an array mode, the scattering layer is arranged between the black matrix layer and the light emitting portion in a one-to-one mode, and scattering particles are arranged in the scattering layer.
2. The display panel of claim 1, wherein the black matrix layer has an area fraction of the display panel of greater than 90%.
3. The display panel of claim 1, further comprising a first anti-reflective layer disposed on an upper surface of the light emitting layer.
4. The display panel according to claim 3, wherein the first anti-reflective layer comprises a first portion and a second portion, the second portion is disposed on an upper surface of the first portion, the first portion is a cathode, and the second portion is an oxidized cathode.
5. The display panel according to claim 1, further comprising a cathode electrode and a light absorbing layer, wherein the cathode electrode is disposed on the light emitting layer, and wherein the light absorbing layer is disposed on the light emitting layer or the cathode electrode.
6. The display panel of claim 1, wherein the scattering layer further comprises scattering microstructures located on an upper surface of the scattering layer.
7. The display panel of claim 1, further comprising a second anti-reflective layer disposed on the anti-reflective structure.
8. A method for manufacturing a display panel, comprising:
providing an array substrate;
arranging a light-emitting layer on the array substrate, wherein the light-emitting layer comprises a plurality of light-emitting parts; and
form antireflection structure on the luminescent layer, antireflection structure including array setting black matrix layer with set up in the scattering layer between the black matrix layer, the scattering layer with the luminescent part one-to-one sets up, scattering particle has in the scattering layer.
9. The method according to claim 8, wherein after the step of providing the light-emitting layer including the plurality of light-emitting portions on the array substrate, a black matrix layer and a scattering layer disposed between the black matrix layers are provided in an array on the light-emitting layer, the scattering layer is provided in one-to-one correspondence with the light-emitting portions, and before the step of providing the scattering particles in the scattering layer, the method further comprises:
Depositing a first antireflection layer material on the light emitting layer, oxidizing the first antireflection layer material to form a first antireflection layer, wherein the first antireflection layer comprises a first part and a second part, the second part is arranged on the upper surface of the first part, the first part is a cathode, and the second part is an oxidized cathode.
10. The method according to claim 8, wherein after the step of providing the light emitting layer on the array substrate, the light emitting layer including a plurality of light emitting sections, an antireflection structure is formed on the light emitting layer, the antireflection structure includes a black matrix layer arranged in an array and a scattering layer arranged between the black matrix layers, the scattering layer is arranged in one-to-one correspondence with the light emitting sections, and before the step of providing the scattering particles in the scattering layer, the method further comprises:
forming a cathode on an upper surface of the light emitting layer;
arranging a light absorption material on the cathode to form a light absorption layer; or
Arranging a light absorption material on the upper surface of the light emitting layer to form a light absorption layer;
and forming a cathode on the upper surface of the light absorbing layer.
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