CN111849399A - Heat dissipation composition of semiconductor device and preparation method thereof - Google Patents
Heat dissipation composition of semiconductor device and preparation method thereof Download PDFInfo
- Publication number
- CN111849399A CN111849399A CN202010549011.0A CN202010549011A CN111849399A CN 111849399 A CN111849399 A CN 111849399A CN 202010549011 A CN202010549011 A CN 202010549011A CN 111849399 A CN111849399 A CN 111849399A
- Authority
- CN
- China
- Prior art keywords
- parts
- heat
- conducting
- epoxy resin
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 65
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 98
- 239000002184 metal Substances 0.000 claims abstract description 98
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000003822 epoxy resin Substances 0.000 claims abstract description 35
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 35
- 229920005989 resin Polymers 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 30
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000003381 stabilizer Substances 0.000 claims abstract description 26
- 239000000314 lubricant Substances 0.000 claims abstract description 24
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 23
- 239000002994 raw material Substances 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 238000005096 rolling process Methods 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 31
- 238000000498 ball milling Methods 0.000 claims description 30
- 239000002002 slurry Substances 0.000 claims description 28
- 238000005266 casting Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 238000001816 cooling Methods 0.000 claims description 20
- 239000007787 solid Substances 0.000 claims description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 229920002545 silicone oil Polymers 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims description 12
- 239000004359 castor oil Substances 0.000 claims description 12
- 235000019438 castor oil Nutrition 0.000 claims description 12
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229920000877 Melamine resin Polymers 0.000 claims description 11
- 229910000831 Steel Inorganic materials 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 11
- 238000005097 cold rolling Methods 0.000 claims description 11
- 239000004845 glycidylamine epoxy resin Substances 0.000 claims description 11
- 230000006698 induction Effects 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- 238000010791 quenching Methods 0.000 claims description 11
- 230000000171 quenching effect Effects 0.000 claims description 11
- 239000010959 steel Substances 0.000 claims description 11
- 238000009210 therapy by ultrasound Methods 0.000 claims description 11
- -1 glycidyl ester Chemical class 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 8
- HQKMJHAJHXVSDF-UHFFFAOYSA-L magnesium stearate Chemical compound [Mg+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O HQKMJHAJHXVSDF-UHFFFAOYSA-L 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 6
- 239000003921 oil Substances 0.000 claims description 6
- 235000019198 oils Nutrition 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- XKZQKPRCPNGNFR-UHFFFAOYSA-N 2-(3-hydroxyphenyl)phenol Chemical compound OC1=CC=CC(C=2C(=CC=CC=2)O)=C1 XKZQKPRCPNGNFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000005062 Polybutadiene Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- CEGOLXSVJUTHNZ-UHFFFAOYSA-K aluminium tristearate Chemical compound [Al+3].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CEGOLXSVJUTHNZ-UHFFFAOYSA-K 0.000 claims description 4
- 229940063655 aluminum stearate Drugs 0.000 claims description 4
- 239000007849 furan resin Substances 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 235000019359 magnesium stearate Nutrition 0.000 claims description 4
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 4
- 239000004843 novolac epoxy resin Substances 0.000 claims description 4
- 229920002857 polybutadiene Polymers 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229940114930 potassium stearate Drugs 0.000 claims description 4
- ANBFRLKBEIFNQU-UHFFFAOYSA-M potassium;octadecanoate Chemical compound [K+].CCCCCCCCCCCCCCCCCC([O-])=O ANBFRLKBEIFNQU-UHFFFAOYSA-M 0.000 claims description 4
- 239000001294 propane Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims description 2
- 239000004812 Fluorinated ethylene propylene Substances 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 239000004677 Nylon Substances 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- 125000002723 alicyclic group Chemical group 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- 229920000180 alkyd Polymers 0.000 claims description 2
- 239000004841 bisphenol A epoxy resin Substances 0.000 claims description 2
- 239000004842 bisphenol F epoxy resin Substances 0.000 claims description 2
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 claims description 2
- 239000000920 calcium hydroxide Substances 0.000 claims description 2
- 229910001861 calcium hydroxide Inorganic materials 0.000 claims description 2
- 239000010696 ester oil Substances 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000004519 grease Substances 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims description 2
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 claims description 2
- 230000001050 lubricating effect Effects 0.000 claims description 2
- 229940057948 magnesium stearate Drugs 0.000 claims description 2
- 229920001778 nylon Polymers 0.000 claims description 2
- 229920009441 perflouroethylene propylene Polymers 0.000 claims description 2
- 229920001568 phenolic resin Polymers 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 229940116254 phosphonic acid Drugs 0.000 claims description 2
- 239000003549 soybean oil Substances 0.000 claims description 2
- 235000012424 soybean oil Nutrition 0.000 claims description 2
- 150000005846 sugar alcohols Polymers 0.000 claims description 2
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 claims description 2
- 239000000052 vinegar Substances 0.000 claims description 2
- 235000021419 vinegar Nutrition 0.000 claims description 2
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 claims description 2
- 229940057977 zinc stearate Drugs 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 230000007774 longterm Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 239000011889 copper foil Substances 0.000 description 19
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 238000012360 testing method Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- 239000000945 filler Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 235000013305 food Nutrition 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009974 thixotropic effect Effects 0.000 description 2
- 235000013757 Juglans Nutrition 0.000 description 1
- 241000758789 Juglans Species 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J109/00—Adhesives based on homopolymers or copolymers of conjugated diene hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
- C09J161/20—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
- C09J161/26—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds
- C09J161/28—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds with melamine
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0806—Silver
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/085—Copper
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0893—Zinc
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
- C08K2003/3009—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention provides a heat dissipation composition of a semiconductor device and a preparation method thereof, wherein the heat dissipation composition is prepared from the following raw materials: the heat-conducting and electric-conducting metal paste comprises heat-conducting and electric-conducting metal paste, epoxy resin, thermosetting resin, a stabilizer, a lubricant, ethylene glycol phenyl ether and phenol. The composition has high heat dissipation, adhesiveness during operation, adhesiveness after curing, and long-term reliability, and can be used for fixing electric components in the fields of power semiconductors and optical semiconductors, semiconductor elements, semiconductor devices, metal plates for circuits, circuits formed from the metal plates, circuit boards, hybrid integrated circuits, and the like.
Description
Technical Field
The invention relates to a heat dissipation composition of a semiconductor device and a preparation method thereof.
Background
In recent years, as semiconductor devices, electric and electronic components have been reduced in size and increased in power, how to dissipate heat generated from the electronic components and the like in a narrow space has become a problem. One of the means is to use an insulating adhesive or sheet for conducting heat from a heat generating target portion of the electronic component to the heat dissipating member. As these adhesives and sheets, compositions in which a thermosetting resin is highly filled with an inorganic high heat dissipation filler are used. However, the amount of heat generated from semiconductor devices, electronic devices, and electronic components tends to increase, and adhesives and sheets used for these devices are required to further improve thermal conductivity. Therefore, it is necessary to fill the resin with an inorganic high heat dissipation filler more than ever. As the resin used for this application, an epoxy resin is mainly used from the viewpoint of adhesiveness to a base material (for example, japanese patent laid-open nos. 2008-101227 (patent document 1), 2008-280436 (patent document 2), and 2010-109285 (patent document 3)). However, if the amount of the filler is increased, the surface area of the epoxy resin is increased, and therefore the amount of the resin adsorbed to the surface of the filler is increased. As a result, there is a problem that the adhesiveness to the substrate and the adhesiveness after curing are significantly reduced. In addition, there is a problem that moldability of an epoxy resin composition highly filled with a filler is remarkably poor.
Disclosure of Invention
The present invention aims to provide a heat-dissipating composition for a semiconductor device, which has high heat dissipation properties, adhesiveness during handling, adhesiveness after curing, and long-term reliability, and which can be used for fixing electrical components in the field of power semiconductors and optical semiconductors, semiconductor devices, metal plates for circuits, circuits formed from the metal plates, circuit boards, hybrid integrated circuits, and the like, and a method for producing the same.
The technical scheme of the invention is realized as follows:
the invention provides a heat dissipation composition of a semiconductor device, which is prepared from the following raw materials: the heat-conducting and electric-conducting metal paste comprises heat-conducting and electric-conducting metal paste, epoxy resin, thermosetting resin, a stabilizer, a lubricant, ethylene glycol phenyl ether and phenol;
the epoxy resin is selected from one or a mixture of more of bisphenol A epoxy resin, bisphenol F epoxy resin, novolac epoxy resin, glycidyl ether epoxy resin, diphenol propane epoxy resin, aliphatic polyhydric alcohol glycidyl ether epoxy resin, glycidyl ester epoxy resin, glycidyl amine epoxy resin and alicyclic epoxy resin;
the thermosetting resin is selected from one or a mixture of more of melamine formaldehyde resin, furan resin, polybutadiene resin, organic silicon resin, thermosetting acrylic resin, oil-soluble phenolic resin, alkyd resin, solvent type epoxy ester resin and thermosetting fluororesin;
The stabilizer is selected from one or more of magnesium stearate, zinc stearate, aluminum stearate, potassium stearate, phosphorous acid vinegar, epoxidized soybean oil, hindered phenol, lead sulfate and lead sulfite;
the lubricant is selected from one or a mixture of more of mechanical oil, castor oil, silicone oil, silicate ester, phosphate ester, fluorine oil, ester oil, synthetic hydrocarbon oil, lubricating grease, graphite, molybdenum disulfide, polytetrafluoroethylene, fluorinated ethylene propylene copolymer, calcium hydroxide, sodium hydroxide, lithium hydroxide, perfluoropoly-benzene, nylon and boron nitride.
Further, the lubricant is a mixture of castor oil and silicone oil, and the mass ratio of the castor oil to the silicone oil is 3: 1.
Further, the stabilizer is a mixture of hindered phenol and lead sulfite, and the mass ratio of the hindered phenol to the lead sulfite is 1: 1.
Further, the thermosetting resin is melamine formaldehyde resin.
Further, the epoxy resin is glycidyl amine epoxy resin.
As a further improvement of the present invention, the preparation method of the heat-conducting and electrically-conducting metal paste is as follows:
s1, casting an ingot: processing copper ingots, silver ingots, tin ingots and zinc ingots into cubic ingredients with the size of 25mm multiplied by 25mm by casting by a metal mold;
s2, rolling deformation: cold rolling the processed blank by a two-roller rolling mill at room temperature to deform, wherein after the two-roller rolling is finished, the accumulated deformation is 12-17%;
S3, remelting treatment: and (3) placing the cold-rolled and deformed sample into a power frequency induction heating furnace to be heated to be in a liquid state, performing ultrasonic treatment and heat preservation for 1-5 hours, taking out the sample, and then rapidly performing water quenching to obtain the semi-solid heat-conducting and electric-conducting metal slurry.
As a further improvement of the invention, the mass ratio of the copper ingot to the silver ingot to the tin ingot to the zinc ingot is 100: (10-25): (1-5): (5-15).
As a further improvement of the present invention, the preparation method of the heat-conducting and electrically-conducting metal paste is as follows:
s1, casting an ingot: processing 100 parts by weight of copper ingot, 10-25 parts by weight of silver ingot, 1-5 parts by weight of tin ingot and 5-15 parts by weight of zinc ingot into a cube material of 25mm multiplied by 25mm by using a metal mold for casting;
s2, rolling deformation: cold rolling the processed blank by a two-roller rolling mill at room temperature to deform, wherein after the two-roller rolling is finished, the accumulated deformation is 12-17%;
s3, remelting treatment: and (3) placing the cold-rolled and deformed sample into a power frequency induction heating furnace to be heated to 1200-1500 ℃ to ensure that the metal is in a liquid state, carrying out 1000-1500W ultrasonic treatment and preserving heat for 1-5h, taking out and then rapidly quenching with water to obtain the semi-solid heat-conducting and electric-conducting metal slurry.
As a further improvement of the invention, the health-care food is prepared from the following raw materials in parts by weight: 10-30 parts of heat-conducting and electric-conducting metal paste, 50-100 parts of epoxy resin, 70-120 parts of thermosetting resin, 1-5 parts of stabilizer, 1-3 parts of lubricant, 30-100 parts of ethylene glycol phenyl ether and 10-20 parts of phenol.
As a further improvement of the invention, the health-care food is prepared from the following raw materials in parts by weight: 15-25 parts of heat-conducting and electric-conducting metal paste, 70-90 parts of epoxy resin, 90-110 parts of thermosetting resin, 2-4 parts of stabilizer, 1-2 parts of lubricant, 50-70 parts of ethylene glycol phenyl ether and 12-18 parts of phenol.
As a further improvement of the invention, the health-care food is prepared from the following raw materials in parts by weight: 20 parts of heat-conducting and electric-conducting metal paste, 82 parts of epoxy resin, 105 parts of thermosetting resin, 3 parts of stabilizer, 1.5 parts of lubricant, 64 parts of ethylene glycol phenyl ether and 15 parts of phenol.
The invention further provides a preparation method of the heat dissipation composition of the semiconductor device, which comprises the following steps:
s1, adding heat-conducting and electricity-conducting metal slurry into ethylene glycol phenyl ether, heating to the temperature of 200 ℃ and 250 ℃, adding phenol to dissolve, and fully and uniformly stirring;
s2, sequentially adding epoxy resin, thermosetting resin and a stabilizer into the system in the step S1, uniformly mixing, cooling to the temperature of 120-;
s3, forming the system in the step S2 between release films to a certain thickness, vulcanizing at 100-120 ℃ for 20-40min, and gradually cooling to room temperature to obtain the heat dissipation composition of the semiconductor device.
As a further improvement of the invention, the ball milling condition is that 5-10 high-chromium wear-resistant steel balls with the diameter of 70mm are used for ball milling for 100-150 min.
As a further improvement of the invention, the ball milling condition is that 5-10 high-chromium wear-resistant steel balls with the diameter of 70mm are used for ball milling for 100-150 min.
The invention has the following beneficial effects: the ethylene glycol phenyl ether is a high-boiling-point solvent, can be used as a diluent, and can also obviously improve the storage stability of the composition at room temperature, when the heat dissipation composition diluted by the high-boiling-point solvent is not or hardly increased in viscosity during use, the composition is easy to cure when being coated in electronic components of projection equipment, becomes a micro-liquid after heating, and is changed into a film with heat dissipation performance due to unchanged viscosity;
the semi-solid heat-conducting and electric-conducting metal slurry prepared by the invention is prepared by mixing the metal silver, copper, zinc and tin with good heat conduction and electric conduction performance and good ductility, compared with the traditional electric-conducting and heat-conducting metal, the semi-solid metal slurry has the advantages of small thermal shock, long service life, less gas content in a casting, small machining allowance, high yield and the like, and because the semi-solid metal has the thixotropic behavior of 'shearing and thinning', the semi-solid metal slurry is easy to fill a die cavity like a fluid during filling, saves pressure, can form parts with complex shapes at a time in a near net shape, and after being combined with other components, the prepared heat-radiating composition is beneficial to the quick heat radiation of high-heating electronic components and has excellent impact resistance, thereby playing a role;
An adhesive in which an epoxy resin and a thermosetting resin are added so that the composition has high heat dissipation properties, adhesiveness during handling, adhesiveness after curing, and long-term reliability can be used for fixing electric components in the field of power semiconductors and optical semiconductors, semiconductor devices, metal plates for circuits, circuits formed from the metal plates, circuit boards, hybrid integrated circuits, and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is an SEM image of the thermally and electrically conductive metal paste prepared in example 5.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Example 1
The raw materials comprise the following components in parts by weight: 10 parts of heat-conducting and electric-conducting metal paste, 50 parts of novolac epoxy resin, 70 parts of furan resin, 1 part of potassium stearate, 1 part of polytetrafluoroethylene, 30 parts of ethylene glycol phenyl ether and 10 parts of phenol.
The preparation method of the heat-conducting and electric-conducting metal paste comprises the following steps:
s1, casting an ingot: processing 100 parts by weight of copper ingot, 10 parts by weight of silver ingot, 1 part by weight of tin ingot and 5 parts by weight of zinc ingot into a cube material of 25mm multiplied by 25mm by casting by a metal mold;
s2, rolling deformation: cold rolling and deforming the processed blank by adopting a two-roller rolling mill at room temperature, wherein after the two-roller rolling is finished, the accumulated deformation is 12%;
s3, remelting treatment: and (3) placing the cold-rolled and deformed sample into a power frequency induction heating furnace, heating to 1200 ℃ to enable the metal to be in a liquid state, carrying out ultrasonic treatment at 1000W, preserving heat for 1h, taking out, and then rapidly carrying out water quenching to obtain semi-solid heat-conducting and electric-conducting metal slurry.
A method of preparing a heat-dissipating composition for a semiconductor device, comprising the steps of:
s1, adding heat-conducting and electric-conducting metal slurry into ethylene glycol phenyl ether, heating to 200 ℃, adding phenol to dissolve, and fully and uniformly stirring;
s2, sequentially adding novolac epoxy resin, furan resin and potassium stearate into the system in the step S1, uniformly mixing, cooling to 120 ℃, adding polytetrafluoroethylene, and performing ball milling until the particle size is below 100 meshes;
S3, forming the system in the step S2 between release films to form a thickness of 0.1mm, vulcanizing at 100 ℃ for 20min, and gradually cooling to room temperature to obtain the heat dissipation composition of the semiconductor device.
In the embodiment, the ball milling condition is that 5 high-chromium wear-resistant steel balls with the diameter of 70mm are used for ball milling for 100 min.
Example 2
The raw materials comprise the following components in parts by weight: 30 parts of heat-conducting and electric-conducting metal paste, 100 parts of glycidyl ether epoxy resin, 120 parts of thermosetting acrylic resin, 5 parts of hindered phenol, 3 parts of molybdenum disulfide, 100 parts of ethylene glycol phenyl ether and 20 parts of phenol.
The preparation method of the heat-conducting and electric-conducting metal paste comprises the following steps:
s1, casting an ingot: processing 100 parts by weight of copper ingot, 25 parts by weight of silver ingot, 5 parts by weight of tin ingot and 15 parts by weight of zinc ingot into a cube material of 25mm multiplied by 25mm by casting by a metal mold;
s2, rolling deformation: cold rolling and deforming the processed blank by adopting a two-roller rolling mill at room temperature, wherein after the two-roller rolling is finished, the accumulated deformation is 17%;
s3, remelting treatment: and (3) placing the cold-rolled and deformed sample into a power frequency induction heating furnace, heating to-1500 ℃ to enable the metal to be in a liquid state, carrying out 1500W ultrasonic treatment, keeping the temperature for 5 hours, taking out, and then rapidly carrying out water quenching to obtain semi-solid heat-conducting and electric-conducting metal slurry.
A method of preparing a heat-dissipating composition for a semiconductor device, comprising the steps of:
s1, adding heat-conducting and electricity-conducting metal slurry into ethylene glycol phenyl ether, heating to the temperature of 200 ℃ and 250 ℃, adding phenol to dissolve, and fully and uniformly stirring;
s2, sequentially adding glycidyl ether epoxy resin, thermosetting acrylic resin and hindered phenol into the system in the step S1, uniformly mixing, cooling to 150 ℃, adding molybdenum disulfide, and performing ball milling until the particle size is below 100 meshes;
s3, forming the system in the step S2 between release films to form a thickness of 2mm, vulcanizing at 120 ℃ for 40 min, and gradually cooling to room temperature to obtain the heat dissipation composition of the semiconductor device.
In the embodiment, the ball milling condition is that 10 high-chromium wear-resistant steel balls with the diameter of 70mm are used for ball milling for 150 min.
Example 3
The raw materials comprise the following components in parts by weight: 15 parts of heat-conducting and electric-conducting metal paste, 70 parts of diphenol propane type epoxy resin, 90 parts of polybutadiene resin, 2 parts of aluminum stearate, 1 part of silicone oil, 50 parts of ethylene glycol phenyl ether and 12 parts of phenol.
The preparation method of the heat-conducting and electric-conducting metal paste comprises the following steps:
s1, casting an ingot: processing 100 parts by weight of copper ingot, 12 parts by weight of silver ingot, 2 parts by weight of tin ingot and 7 parts by weight of zinc ingot into a cube material with the size of 25mm multiplied by 25mm by using a metal mold for casting;
S2, rolling deformation: cold rolling and deforming the processed blank by adopting a two-roller rolling mill at room temperature, wherein after the two-roller rolling is finished, the accumulated deformation is 13%;
s3, remelting treatment: and (3) placing the cold-rolled and deformed sample into a power frequency induction heating furnace, heating to 1250 ℃ to enable the metal to be in a liquid state, carrying out 1100W ultrasonic treatment, preserving heat for 2 hours, taking out, and then rapidly carrying out water quenching to obtain semi-solid heat-conducting and electric-conducting metal slurry.
A method of preparing a heat-dissipating composition for a semiconductor device, comprising the steps of:
s1, adding heat-conducting and electric-conducting metal slurry into ethylene glycol phenyl ether, heating to 210 ℃, adding phenol to dissolve, and fully and uniformly stirring;
s2, sequentially adding diphenol propane type epoxy resin, polybutadiene resin and aluminum stearate into the system in the step S1, uniformly mixing, cooling to 125 ℃, adding silicone oil, and performing ball milling until the particle size is below 100 meshes;
s3, forming the system in the step S2 between release films to form a thickness of 0.5mm, vulcanizing at 105 ℃ for 25min, and gradually cooling to room temperature to obtain the heat dissipation composition of the semiconductor device.
In the embodiment, the ball milling condition is that 6 high-chromium wear-resistant steel balls with the diameter of 70mm are used for ball milling for 110 min.
Example 4
The raw materials comprise the following components in parts by weight: 25 parts of heat-conducting and electric-conducting metal paste, 90 parts of bisphenol F type epoxy resin, 110 parts of organic silicon resin, 4 parts of magnesium stearate, 2 parts of graphite, 70 parts of ethylene glycol phenyl ether and 18 parts of phenol.
The preparation method of the heat-conducting and electric-conducting metal paste comprises the following steps:
s1, casting an ingot: processing 100 parts by weight of copper ingot, 22 parts by weight of silver ingot, 4 parts by weight of tin ingot and 13 parts by weight of zinc ingot into a cube material with the size of 25mm multiplied by 25mm by casting by a metal mold;
s2, rolling deformation: cold rolling the processed blank by a two-roller rolling mill at room temperature to deform, wherein after the two-roller rolling is finished, the accumulated deformation is 16%;
s3, remelting treatment: and (3) placing the cold-rolled and deformed sample into a power frequency induction heating furnace, heating to 1350 ℃ to enable the metal to be in a liquid state, carrying out 1400W ultrasonic treatment and preserving heat for 4 hours, taking out and then rapidly carrying out water quenching to obtain semi-solid heat-conducting and electric-conducting metal slurry.
A method of preparing a heat-dissipating composition for a semiconductor device, comprising the steps of:
s1, adding heat-conducting and electric-conducting metal slurry into ethylene glycol phenyl ether, heating to 240 ℃, adding phenol to dissolve, and fully and uniformly stirring;
s2, sequentially adding bisphenol F type epoxy resin, organic silicon resin and magnesium stearate into the system in the step S1, uniformly mixing, cooling to 140 ℃, adding graphite, and performing ball milling until the granularity is below 100 meshes;
s3, forming the system in the step S2 between release films to form a thickness of 1.6mm, vulcanizing at 105 ℃ for 35min, and gradually cooling to room temperature to obtain the heat dissipation composition of the semiconductor device.
In the embodiment, the ball milling condition is that 9 high-chromium wear-resistant steel balls with the diameter of 70mm are used for ball milling for 140 min.
Example 5
The raw materials comprise the following components in parts by weight: 20 parts of heat-conducting and electric-conducting metal paste, 82 parts of glycidyl amine epoxy resin, 105 parts of melamine formaldehyde resin, 3 parts of stabilizer, 1.5 parts of lubricant, 64 parts of ethylene glycol phenyl ether and 15 parts of phenol.
The preparation method of the heat-conducting and electric-conducting metal paste comprises the following steps:
s1, casting an ingot: processing 100 parts by weight of copper ingot, 17 parts by weight of silver ingot, 3 parts by weight of tin ingot and 10 parts by weight of zinc ingot into a cube material of 25mm multiplied by 25mm by casting with a metal mold;
s2, rolling deformation: cold rolling the processed blank by a two-roller rolling mill at room temperature to deform, wherein after the two-roller rolling is finished, the accumulated deformation is 15%;
s3, remelting treatment: and (3) placing the cold-rolled and deformed sample into a power frequency induction heating furnace, heating to 1350 ℃ to enable the metal to be in a liquid state, carrying out 1250W ultrasonic treatment, preserving heat for 3 hours, taking out, and then rapidly carrying out water quenching to obtain semi-solid heat-conducting and electric-conducting metal slurry. The SEM image of the heat-conducting and electric-conducting metal paste is shown in figure 1, and the alpha solid phase crystal grains are gradually coarsened along with the prolonging of the heat preservation time as is obviously observed from the structure picture.
A method of preparing a heat-dissipating composition for a semiconductor device, comprising the steps of:
S1, adding heat-conducting and electric-conducting metal slurry into ethylene glycol phenyl ether, heating to 225 ℃, adding phenol to dissolve, and fully and uniformly stirring;
s2, sequentially adding glycidyl amine epoxy resin, melamine formaldehyde resin and a stabilizer into the system in the step S1, uniformly mixing, cooling to 135 ℃, adding a lubricant, and performing ball milling until the granularity is below 100 meshes;
s3, forming the system in the step S2 between release films to form a thickness of 1mm, vulcanizing at 110 ℃ for 30 min, and gradually cooling to room temperature to obtain the heat dissipation composition of the semiconductor device.
In the embodiment, the ball milling condition is that 7 high-chromium wear-resistant steel balls with the diameter of 70mm are used for ball milling for 125 min.
In the embodiment, the lubricant is a mixture of castor oil and silicone oil, and the mass ratio of the castor oil to the silicone oil is 3: 1.
In the embodiment, the stabilizer is a mixture of hindered phenol and lead sulfite, and the mass ratio of the hindered phenol to the lead sulfite is 1: 1.
Comparative example 1
Compared with the embodiment 5, the heat-conducting and electric-conducting metal paste is not added, and other conditions are not changed.
The raw materials comprise the following components in parts by weight: 82 parts of glycidyl amine epoxy resin, 105 parts of melamine formaldehyde resin, 3 parts of stabilizer, 1.5 parts of lubricant, 64 parts of ethylene glycol phenyl ether and 15 parts of phenol.
A method of preparing a heat-dissipating composition for a semiconductor device, comprising the steps of:
S1, adding heat-conducting and electric-conducting metal slurry into ethylene glycol phenyl ether, heating to 225 ℃, adding phenol to dissolve, and fully and uniformly stirring;
s2, sequentially adding glycidyl amine epoxy resin, melamine formaldehyde resin and a stabilizer into the system in the step S1, uniformly mixing, cooling to 135 ℃, adding a lubricant, and performing ball milling until the granularity is below 100 meshes;
s3, forming the system in the step S2 between release films to form a thickness of 1mm, vulcanizing at 110 ℃ for 30 min, and gradually cooling to room temperature to obtain the heat dissipation composition of the semiconductor device.
In the embodiment, the ball milling condition is that 7 high-chromium wear-resistant steel balls with the diameter of 70mm are used for ball milling for 125 min.
In the embodiment, the lubricant is a mixture of castor oil and silicone oil, and the mass ratio of the castor oil to the silicone oil is 3: 1.
In the embodiment, the stabilizer is a mixture of hindered phenol and lead sulfite, and the mass ratio of the hindered phenol to the lead sulfite is 1: 1.
Comparative example 2
Compared with the embodiment 5, silver is not added into the heat-conducting and electric-conducting metal paste, and other conditions are not changed.
The raw materials comprise the following components in parts by weight: 20 parts of heat-conducting and electric-conducting metal paste, 82 parts of glycidyl amine epoxy resin, 105 parts of melamine formaldehyde resin, 3 parts of stabilizer, 1.5 parts of lubricant, 64 parts of ethylene glycol phenyl ether and 15 parts of phenol.
The preparation method of the heat-conducting and electric-conducting metal paste comprises the following steps:
s1, casting an ingot: processing 100 parts by weight of copper ingot, 3 parts by weight of tin ingot and 27 parts by weight of zinc ingot into a cube material of 25mm multiplied by 25mm by casting with a metal mold;
s2, rolling deformation: cold rolling the processed blank by a two-roller rolling mill at room temperature to deform, wherein after the two-roller rolling is finished, the accumulated deformation is 15%;
s3, remelting treatment: and (3) placing the cold-rolled and deformed sample into a power frequency induction heating furnace, heating to 1350 ℃ to enable the metal to be in a liquid state, carrying out 1250W ultrasonic treatment, preserving heat for 3 hours, taking out, and then rapidly carrying out water quenching to obtain semi-solid heat-conducting and electric-conducting metal slurry.
A method of preparing a heat-dissipating composition for a semiconductor device, comprising the steps of:
s1, adding heat-conducting and electric-conducting metal slurry into ethylene glycol phenyl ether, heating to 225 ℃, adding phenol to dissolve, and fully and uniformly stirring;
s2, sequentially adding glycidyl amine epoxy resin, melamine formaldehyde resin and a stabilizer into the system in the step S1, uniformly mixing, cooling to 135 ℃, adding a lubricant, and performing ball milling until the granularity is below 100 meshes;
s3, forming the system in the step S2 between release films to form a thickness of 1mm, vulcanizing at 110 ℃ for 30 min, and gradually cooling to room temperature to obtain the heat dissipation composition of the semiconductor device.
In the embodiment, the ball milling condition is that 7 high-chromium wear-resistant steel balls with the diameter of 70mm are used for ball milling for 125 min.
In the embodiment, the lubricant is a mixture of castor oil and silicone oil, and the mass ratio of the castor oil to the silicone oil is 3: 1.
In the embodiment, the stabilizer is a mixture of hindered phenol and lead sulfite, and the mass ratio of the hindered phenol to the lead sulfite is 1: 1.
Comparative example 3
Compared with the embodiment 5, zinc is not added into the heat-conducting and electric-conducting metal slurry, and other conditions are not changed.
The raw materials comprise the following components in parts by weight: 20 parts of heat-conducting and electric-conducting metal paste, 82 parts of glycidyl amine epoxy resin, 105 parts of melamine formaldehyde resin, 3 parts of stabilizer, 1.5 parts of lubricant, 64 parts of ethylene glycol phenyl ether and 15 parts of phenol.
The preparation method of the heat-conducting and electric-conducting metal paste comprises the following steps:
s1, casting an ingot: processing 100 parts by weight of copper ingot, 27 parts by weight of silver ingot and 3 parts by weight of tin ingot into a cube material with the size of 25mm multiplied by 25mm by casting by a metal mold;
s2, rolling deformation: cold rolling the processed blank by a two-roller rolling mill at room temperature to deform, wherein after the two-roller rolling is finished, the accumulated deformation is 15%;
s3, remelting treatment: and (3) placing the cold-rolled and deformed sample into a power frequency induction heating furnace, heating to 1350 ℃ to enable the metal to be in a liquid state, carrying out 1250W ultrasonic treatment, preserving heat for 3 hours, taking out, and then rapidly carrying out water quenching to obtain semi-solid heat-conducting and electric-conducting metal slurry.
A method of preparing a heat-dissipating composition for a semiconductor device, comprising the steps of:
s1, adding heat-conducting and electric-conducting metal slurry into ethylene glycol phenyl ether, heating to 225 ℃, adding phenol to dissolve, and fully and uniformly stirring;
s2, sequentially adding glycidyl amine epoxy resin, melamine formaldehyde resin and a stabilizer into the system in the step S1, uniformly mixing, cooling to 135 ℃, adding a lubricant, and performing ball milling until the granularity is below 100 meshes;
s3, forming the system in the step S2 between release films to form a thickness of 1mm, vulcanizing at 110 ℃ for 30 min, and gradually cooling to room temperature to obtain the heat dissipation composition of the semiconductor device.
In the embodiment, the ball milling condition is that 7 high-chromium wear-resistant steel balls with the diameter of 70mm are used for ball milling for 125 min.
In the embodiment, the lubricant is a mixture of castor oil and silicone oil, and the mass ratio of the castor oil to the silicone oil is 3: 1.
In the embodiment, the stabilizer is a mixture of hindered phenol and lead sulfite, and the mass ratio of the hindered phenol to the lead sulfite is 1: 1.
Test example 1
The compositions prepared in examples 1 to 5 of the present invention and comparative examples 1 to 3 were subjected to performance tests, and the results of dielectric breakdown voltage, glass transition temperature, workability, moldability, flexibility, adhesiveness, withstand voltage, thermal conductivity and porosity were measured by the following methods and are shown in Table 1.
[ method for measuring insulation breakdown Voltage ]
The cycle was repeated by increasing the voltage of an AC power supply having a frequency of 50Hz to 5kV per minute at a rate of 5kV, maintaining the voltage for 1 minute, and decreasing the voltage to 0kV at a rate of 5kV per minute. When the current of 1mA or more is confirmed in the cycle, it is judged that the insulation breakdown is caused. In addition, a withstand voltage/insulation resistance measuring device TOS9201 manufactured by Juglans Water and Electricity industries, Inc. was used for the test, and a cylinder having a diameter of 25 mm/a cylinder having a diameter of 75mm was used for the electrode.
[ glass transition temperature after curing ]
The adhesive sheets prepared by the prescribed method were placed in a mold of 20mm square in a state of being stacked with 25 sheets, and press-cured at a temperature of 180 ℃ and a pressure of 3 MPa. The molded article thus obtained was cut so that the sheet was high in the plane direction, to obtain a square test piece having a height of 10mm and a width of 5 mm. The glass transition temperature of the test piece was measured by the TMA method. The measurement conditions were 10K/min temperature rise and 5 g/min load. The measurement apparatus used was EXSTAR TMA/SS7000, manufactured by SII Nanotechnology corporation.
[ workability ]
After the adhesive sheet produced by the predetermined method was stored at 23 ℃, the releasability from the supporting film and the flexibility of the cured front sheet were confirmed. The releasability was judged by the presence or absence of breakage of the sheet when the support film was peeled. Regarding flexibility, the cured front sheet was wound around a cylinder having a diameter of 50mm in a state of being attached to a support film, and whether or not the sheet was broken was judged. When there was no damage, the test piece was judged as "O", and when there was a damage, the test piece was judged as "X".
[ formability ]
The adhesive sheet prepared by the predetermined method was cut into 50mm × 50mm, and the support film was peeled off. The resultant was pressed and cured at 180 ℃ and 3MPa in a state of being sandwiched between 70mm X35 μm and 40mm X35 μm electrolytic copper foils. The obtained single-sided copper foil sheet was examined for the case where the copper foil was embedded in the sheet and the case where the occurrence of cracks around the embedded copper foil was observed. The presence or absence of cracking was determined by conducting an insulation breakdown voltage test, and confirming that the current was applied when the voltage was less than 1.0 kV. When no crack occurred, the test piece was judged as "O", and when crack occurred, the test piece was judged as "X".
[ flexibility ]
The adhesive sheet prepared by the predetermined method was cut into 50mm × 50mm, and the support film was peeled off. The electrolytic copper foil was sandwiched between 70mm X35 μm, and the resultant was pressed and cured at 180 ℃ and a pressure of 3 MPa. Only the single-sided copper foil was peeled from the obtained double-sided copper foil to produce a single-sided copper foil. The single-sided copper foil sheet was wound around a cylinder of phi 100mm in a state where the copper foil was on the outside, and the flexibility was judged based on the presence or absence of breakage of the sheet. The specimen was judged as "good" when the specimen was not broken and "x" when the specimen was broken.
[ adhesiveness ]
The adhesive sheet prepared by the predetermined method was cut into pieces of 100mm × 30mm, and the support film was peeled off. The sheet was pressed and cured at 180 ℃ and 3MPa in a state of being sandwiched between a 150mm X30 mm X1 mm aluminum plate and a 150mm X30 mm X35 μm electrolytic copper foil. The copper foil other than 10mm wide at the center of the obtained single-sided copper foil/aluminum attached sheet was removed to prepare a test piece for 90 ℃ peel strength. The test piece was evaluated as good in adhesiveness when it had a peel strength of 0.5kN/m or more as measured according to JIS-C6481, and evaluated as good as O, and poor in adhesiveness when it had a peel strength of less than 0.5kN/m as X.
[ withstand voltage ]
The adhesive sheet prepared by the predetermined method was cut into 50mm × 50mm, and the support film was peeled off. The resultant was pressed and cured at 180 ℃ and 3MPa in a state of being sandwiched between 70mm X35 μm electrolytic copper foil. And peeling the double-sided copper foil from the obtained double-sided copper foil to obtain the cured sheet monomer. The dielectric breakdown voltage test was performed under the following conditions using 5 cured sheet monomers. When the yield of the insulation breakdown voltage of 5kV or more was 80% or more, the withstand voltage was good, and judged as good, and when the yield was less than 80%, the withstand voltage was poor, and judged as x.
[ thermal conductivity ]
The adhesive sheet prepared by the predetermined method was cut into 50mm × 50mm, and the support film was peeled off. The electrolytic copper foil was sandwiched between 70mm X35 μm, and the resultant was pressed and cured at 180 ℃ and a pressure of 3 MPa. And peeling the double-sided copper foil from the obtained double-sided copper foil to obtain the cured sheet monomer. The cured sheet was cut into pieces of 10mm × 10mm, and the thermal diffusivity at 25 ℃ was measured by using a thermal conductivity measuring device LFA447NanoFlash (manufactured by NETZSCH). The thermal conductivity was calculated by the same method as the thermal conductivity of the molded article.
TABLE 1
As can be seen from the above table, the heat dissipating composition prepared by the present invention has excellent thermal conductivity (35.2-45.2W/mK), high glass transition temperature (190-.
Comparative example 1, no conductive metal paste was added, the thermal conductivity was greatly reduced to only 10.2W/mK, the glass transition temperature was reduced, and the formability and voltage resistance were poor;
compared with the example 5, the silver or the zinc is not added in the prepared conductive electric metal paste of the comparative example 2 and the comparative example 3 respectively, so that the thermal conductivity is greatly reduced, and the glass transition temperature is reduced; in addition, the adhesive strength, flexibility, formability, voltage resistance and workability are all reduced to different degrees, and the addition of silver and zinc has a synergistic effect.
Compared with the prior art, the ethylene glycol phenyl ether is a high-boiling point solvent, not only can be used as a diluent, but also can obviously increase the storage stability of the composition at room temperature, when the heat dissipation composition diluted by the high-boiling point solvent is used, the viscosity is not increased or hardly increased, the composition is coated in electronic components of projection equipment, is easy to cure and becomes a micro-liquid after heating, and the coating is converted into a film with heat dissipation performance because the viscosity is not changed;
the semi-solid heat-conducting and electric-conducting metal slurry prepared by the invention is prepared by mixing the metal silver, copper, zinc and tin with good heat conduction and electric conduction performance and good ductility, compared with the traditional electric-conducting and heat-conducting metal, the semi-solid metal slurry has the advantages of small thermal shock, long service life, less gas content in a casting, small machining allowance, high yield and the like, and because the semi-solid metal has the thixotropic behavior of 'shearing and thinning', the semi-solid metal slurry is easy to fill a die cavity like a fluid during filling, saves pressure, can form parts with complex shapes by near net once, and after being combined with other components, the prepared heat-radiating composition is beneficial to the quick heat radiation of an electronic component with high heat generation, has excellent impact resistance and plays a role in protecting;
An adhesive in which an epoxy resin and a thermosetting resin are added so that the composition has high heat dissipation properties, adhesiveness during handling, adhesiveness after curing, and long-term reliability can be used for fixing electrical components in the field of power semiconductors and optical semiconductors, semiconductor devices, metal plates for circuits, circuits formed from the metal plates, circuit boards, hybrid integrated circuits, and the like.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. The heat dissipation composition for the semiconductor device is characterized by being prepared from the following raw materials: the heat-conducting and electric-conducting metal paste comprises heat-conducting and electric-conducting metal paste, epoxy resin, thermosetting resin, a stabilizer, a lubricant, ethylene glycol phenyl ether and phenol;
the epoxy resin is selected from one or a mixture of more of bisphenol A epoxy resin, bisphenol F epoxy resin, novolac epoxy resin, glycidyl ether epoxy resin, diphenol propane epoxy resin, aliphatic polyhydric alcohol glycidyl ether epoxy resin, glycidyl ester epoxy resin, glycidyl amine epoxy resin and alicyclic epoxy resin;
The thermosetting resin is selected from one or a mixture of more of melamine formaldehyde resin, furan resin, polybutadiene resin, organic silicon resin, thermosetting acrylic resin, oil-soluble phenolic resin, alkyd resin, solvent type epoxy ester resin and thermosetting fluororesin;
the stabilizer is selected from one or more of magnesium stearate, zinc stearate, aluminum stearate, potassium stearate, phosphorous acid vinegar, epoxidized soybean oil, hindered phenol, lead sulfate and lead sulfite;
the lubricant is selected from one or a mixture of more of mechanical oil, castor oil, silicone oil, silicate ester, phosphate ester, fluorine oil, ester oil, synthetic hydrocarbon oil, lubricating grease, graphite, molybdenum disulfide, polytetrafluoroethylene, fluorinated ethylene propylene copolymer, calcium hydroxide, sodium hydroxide, lithium hydroxide, perfluoropoly-benzene, nylon and boron nitride.
2. The heat dissipating composition for semiconductor devices according to claim 1, wherein the thermally and electrically conductive metal paste is prepared by the following steps:
s1, casting an ingot: processing copper ingots, silver ingots, tin ingots and zinc ingots into cubic ingredients with the size of 25mm multiplied by 25mm by casting by a metal mold;
s2, rolling deformation: cold rolling the processed blank by a two-roller rolling mill at room temperature for deformation, wherein the accumulated deformation is 12-17% after the two-roller rolling is finished;
S3, remelting treatment: and (3) placing the cold-rolled and deformed sample into a power frequency induction heating furnace to be heated to be in a liquid state, carrying out ultrasonic treatment and heat preservation for 1-5h, taking out the sample, and then rapidly carrying out water quenching to obtain the semi-solid heat-conducting and electric-conducting metal slurry.
3. The heat dissipating composition for a semiconductor device according to claim 2, wherein the mass ratio of the copper ingot to the silver ingot to the tin ingot to the zinc ingot is 100: (10-25): (1-5): (5-15).
4. The heat dissipating composition for semiconductor devices as claimed in claim 2, wherein the thermally and electrically conductive metal paste is prepared by the following steps:
s1, casting an ingot: processing 100 parts by weight of copper ingot, 10-25 parts by weight of silver ingot, 1-5 parts by weight of tin ingot and 5-15 parts by weight of zinc ingot into a cube material with the size of 25mm multiplied by 25mm by using a metal mold for casting;
s2, rolling deformation: cold rolling the processed blank by a two-roller rolling mill at room temperature for deformation, wherein the accumulated deformation is 12-17% after the two-roller rolling is finished;
s3, remelting treatment: and (3) placing the cold-rolled and deformed sample into a power frequency induction heating furnace to be heated to 1200-1500 ℃ to ensure that the metal is in a liquid state, carrying out 1000-1500W ultrasonic treatment and preserving heat for 1-5h, taking out and then rapidly quenching with water to obtain the semi-solid heat-conducting and electric-conducting metal slurry.
5. The heat dissipating composition of a semiconductor device according to claim 1, which is prepared from the following raw materials in parts by weight: 10-30 parts of heat-conducting and electric-conducting metal paste, 50-100 parts of epoxy resin, 70-120 parts of thermosetting resin, 1-5 parts of stabilizer, 1-3 parts of lubricant, 30-100 parts of ethylene glycol phenyl ether and 10-20 parts of phenol.
6. The heat dissipating composition for semiconductor devices according to claim 5, which is prepared from the following raw materials in parts by weight: 15-25 parts of heat-conducting and electric-conducting metal paste, 70-90 parts of epoxy resin, 90-110 parts of thermosetting resin, 2-4 parts of stabilizer, 1-2 parts of lubricant, 50-70 parts of ethylene glycol phenyl ether and 12-18 parts of phenol.
7. The heat dissipating composition for semiconductor devices according to claim 6, which is prepared from the following raw materials in parts by weight: 20 parts of heat-conducting and electric-conducting metal paste, 82 parts of epoxy resin, 105 parts of thermosetting resin, 3 parts of stabilizer, 1.5 parts of lubricant, 64 parts of ethylene glycol phenyl ether and 15 parts of phenol.
8. A method for preparing a heat-dissipating composition for a semiconductor device as claimed in any one of claims 1 to 7, comprising the steps of:
s1, adding heat-conducting and electricity-conducting metal slurry into ethylene glycol phenyl ether, heating to the temperature of 200 ℃ and 250 ℃, adding phenol to dissolve, and fully and uniformly stirring;
S2, sequentially adding epoxy resin, thermosetting resin and a stabilizer into the system in the step S1, uniformly mixing, cooling to the temperature of 120-;
s3, forming the system in the step S2 between release films to a certain thickness, vulcanizing at 100-120 ℃ for 20-40min, and gradually cooling to room temperature to obtain the heat dissipation composition of the semiconductor device.
9. The preparation method according to claim 8, wherein the ball milling condition is that 5-10 high chromium wear-resistant steel balls with a diameter of 70mm are used for ball milling for 100-150 min.
10. The method according to claim 8, wherein the thickness in step S3 is 0.1 to 2 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010549011.0A CN111849399A (en) | 2020-06-16 | 2020-06-16 | Heat dissipation composition of semiconductor device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010549011.0A CN111849399A (en) | 2020-06-16 | 2020-06-16 | Heat dissipation composition of semiconductor device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111849399A true CN111849399A (en) | 2020-10-30 |
Family
ID=72987573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010549011.0A Pending CN111849399A (en) | 2020-06-16 | 2020-06-16 | Heat dissipation composition of semiconductor device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111849399A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115678473A (en) * | 2022-11-09 | 2023-02-03 | 宁夏中色新材料有限公司 | Single-component silver conductive adhesive suitable for normal-temperature storage and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004277572A (en) * | 2003-03-17 | 2004-10-07 | Renesas Technology Corp | Non-solvent liquid silver paste formulation and semiconductor device using it |
| US20050154181A1 (en) * | 2004-01-09 | 2005-07-14 | Dueber Thomas E. | Polyimide compositions having resistance to water sorption, and methods relating thereto |
| CN102942884A (en) * | 2012-11-20 | 2013-02-27 | 东莞市松山湖微电子材料研发中心 | Conductive adhesive containing semisolid formed copper-based filler |
| CN104220533A (en) * | 2012-03-30 | 2014-12-17 | 昭和电工株式会社 | Curable heat radiation composition |
| CN105234356A (en) * | 2015-07-14 | 2016-01-13 | 南昌大学 | Preparation method for aluminum alloy semi-solid slurry induced and impregnated by modificator |
| CN110625083A (en) * | 2019-09-27 | 2019-12-31 | 西南交通大学 | Device and method for preparing aluminum alloy semi-solid slurry |
-
2020
- 2020-06-16 CN CN202010549011.0A patent/CN111849399A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004277572A (en) * | 2003-03-17 | 2004-10-07 | Renesas Technology Corp | Non-solvent liquid silver paste formulation and semiconductor device using it |
| US20050154181A1 (en) * | 2004-01-09 | 2005-07-14 | Dueber Thomas E. | Polyimide compositions having resistance to water sorption, and methods relating thereto |
| CN104220533A (en) * | 2012-03-30 | 2014-12-17 | 昭和电工株式会社 | Curable heat radiation composition |
| CN102942884A (en) * | 2012-11-20 | 2013-02-27 | 东莞市松山湖微电子材料研发中心 | Conductive adhesive containing semisolid formed copper-based filler |
| CN105234356A (en) * | 2015-07-14 | 2016-01-13 | 南昌大学 | Preparation method for aluminum alloy semi-solid slurry induced and impregnated by modificator |
| CN110625083A (en) * | 2019-09-27 | 2019-12-31 | 西南交通大学 | Device and method for preparing aluminum alloy semi-solid slurry |
Non-Patent Citations (8)
| Title |
|---|
| （美）吉科普利斯: "《传递过程与分离过程原理（包括单元操作）下》", 30 November 2007, 华东理工大学出版社 * |
| 冯新德: "《高分子辞典》", 30 June 1998, 中国石化出版社 * |
| 北京师范大学化学工程教研室: "《化学工程基础实验》", 30 November 1980, 人民教育出版社 * |
| 李月峰 等: "《LED热管及散热技术应用》", 30 September 2018, 上海科学技术出版社 * |
| 管蓉 等: "《玻璃与陶瓷用胶黏剂及粘接技术》", 31 October 2004, 化学工业出版社 * |
| 贾绍义: "《化工原理及实验 上》", 30 June 2004, 高等教育出版社 * |
| 陈平 等: "《环氧树脂及其应用》", 29 February 2004, 化学工业出版社 * |
| 高义民: "《材料凝固成形方法》", 31 May 2009, 西安交通大学出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115678473A (en) * | 2022-11-09 | 2023-02-03 | 宁夏中色新材料有限公司 | Single-component silver conductive adhesive suitable for normal-temperature storage and preparation method thereof |
| CN115678473B (en) * | 2022-11-09 | 2024-07-23 | 宁夏中色新材料有限公司 | Single-component silver conductive adhesive suitable for normal temperature storage and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7053579B2 (en) | Heat transfer member and heat dissipation structure including it | |
| JP7145876B2 (en) | Nitride ceramic resin composite | |
| US11133445B2 (en) | Resin composition for circuit board, and metal-base circuit board in which same is used | |
| TW201525055A (en) | Epoxy resin composition, carrier material with resin layer, metal base circuit board, and electronic devices | |
| JP2008120065A (en) | Heat radiating film | |
| WO2015056555A1 (en) | Metal substrate, metal-based circuit board, electronic device, and method for manufacturing metal-based circuit board | |
| JP2016027144A (en) | Thermally conductive sheet, cured product of thermally conductive sheet, and semiconductor device | |
| CN111849399A (en) | Heat dissipation composition of semiconductor device and preparation method thereof | |
| JP2016079304A (en) | Resin sheet, resin sheet cured product, resin sheet laminate, resin sheet laminate cured product and method for producing the same, semiconductor device, and led device | |
| WO2012165265A1 (en) | Substrate, method for producing same, heat-releasing substrate, and heat-releasing module | |
| CN102711367B (en) | A kind of heat conduction aluminum substrate and preparation method thereof | |
| TW201444962A (en) | Device, composition for adhesive agent, and adhesive sheet | |
| KR101433653B1 (en) | A epoxy resin composition, adhesive sheet and circuit board including the composition and the manufacturing method for the circuit board | |
| WO2017146132A1 (en) | Heat dissipating substrate | |
| CN111825947B (en) | Resin composition for metal substrate, resin glue solution containing resin composition and metal-based copper-clad laminate | |
| WO2022176448A1 (en) | Thermosetting resin composition, susbstrate for power modules, and power module | |
| CN107851624B (en) | Substrate for power module, circuit substrate for power module, and power module | |
| JP2020180216A (en) | Resin composition and electronic component structure | |
| CN110643314B (en) | Efficient epoxy heat-conducting structural adhesive and preparation method thereof | |
| JP2008218596A (en) | Metal base circuit board and manufacturing method thereof | |
| CN109624441B (en) | High-thermal-conductivity copper-clad plate and preparation method thereof | |
| JP2012131899A (en) | Resin composition, resin sheet, metal-based circuit board, inverter, and power semiconductor device | |
| JP2017152610A (en) | Circuit board and electronic component mounting board | |
| EP4166593A1 (en) | Heat-conductive sheet and semiconductor module including said heat-conductive sheet | |
| JP2013023503A (en) | Resin composition, resin sheet, laminate, metal-based circuit board, inverter and power semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201030 |
|
| RJ01 | Rejection of invention patent application after publication |