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CN111834505B - Three-pole luminous tube based on wavelength down-conversion and manufacturing method thereof - Google Patents

Three-pole luminous tube based on wavelength down-conversion and manufacturing method thereof Download PDF

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CN111834505B
CN111834505B CN202010536568.0A CN202010536568A CN111834505B CN 111834505 B CN111834505 B CN 111834505B CN 202010536568 A CN202010536568 A CN 202010536568A CN 111834505 B CN111834505 B CN 111834505B
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semiconductor layer
contact electrode
layer
light
conversion
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CN111834505A (en
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郭太良
翁雅恋
张永爱
周雄图
吴朝兴
严群
孙捷
林志贤
李诗尧
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Fuzhou University
Mindu Innovation Laboratory
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Mindu Innovation Laboratory
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
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    • H—ELECTRICITY
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    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

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Abstract

The invention relates to a tripolar light-emitting tube based on wavelength down-conversion, which comprises a substrate, a buffer layer, a triode, a light-emitting chip and a color conversion layer which are sequentially arranged from bottom to top; the triode comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer which are sequentially arranged from bottom to top, and further comprises a first contact electrode led out from the first semiconductor layer and a second contact electrode led out from the second semiconductor layer; the light-emitting chip comprises a third semiconductor layer, a light-emitting layer, a fourth semiconductor layer and a third contact electrode, wherein the third semiconductor layer, the light-emitting layer and the fourth semiconductor layer are sequentially arranged from bottom to top, and the third contact electrode is led out from the fourth semiconductor layer; the color conversion layer comprises a light conversion layer and a distributed Bragg reflection layer which are sequentially arranged from bottom to top. The invention amplifies the power of the input signal, realizes that the low-power input signal drives the light-emitting chip to excite the color conversion layer and realizes color conversion; meanwhile, the design complexity of a driving circuit of the light-emitting device is effectively reduced, and the integration level of the display device is improved.

Description

Three-pole luminous tube based on wavelength down-conversion and manufacturing method thereof
Technical Field
The invention relates to the field of semiconductor display light-emitting devices, in particular to a tripolar light-emitting tube based on wavelength down-conversion and a manufacturing method thereof.
Background
Light Emitting Diodes (LEDs) are increasingly used in displays because of their advantages of long lifetime, small size, low power consumption, high brightness, fast response, etc. The micron-sized light emitting diode (mu LED) is a micro-scaled LED array with a micron-sized pitch formed by miniaturizing traditional LEDs so as to achieve ultrahigh-density pixel resolution, can be widely applied to the fields of flexible and transparent displays, AR, VR and the like, and is one of the most potential next-generation display devices. Compared with OLED and LCD display, the mu LED display color is easier to debug accurately, has long light-emitting service life and high brightness, is the only display device which can integrate driving, light-emitting and signal transmission into a whole, has high light-emitting efficiency and low power consumption, and realizes a super-large scale integrated light-emitting unit.
When the LED in the market is in a vertical structure or a flip-chip structure, the LED is basically driven by two electrodes, that is, only two contact electrodes are applied to two ends of the LED. Although the driving method is relatively universal, the low-power signal output by the control chip often cannot directly drive the LED, and power amplification is needed in the middle. These power amplification circuits will significantly increase the design complexity of the driving circuit. Especially for μ LED displays, complex driving circuits are not conducive to the construction of highly integrated systems.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a wavelength down-conversion based triode and a method for manufacturing the same, which can drive a light emitting chip to emit light by using a low-power input signal, and can effectively reduce the complexity of the driving circuit design of a light emitting device and improve the integration of a display device.
In order to achieve the purpose, the invention adopts the following technical scheme:
a tripolar light-emitting tube based on wavelength down-conversion comprises a substrate, a buffer layer, a triode, a blue or ultraviolet light-emitting chip and a color conversion layer which are sequentially arranged from bottom to top; the triode comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer which are sequentially arranged from bottom to top, and further comprises a first contact electrode led out from the first semiconductor layer and a second contact electrode led out from the second semiconductor layer; the light-emitting chip comprises a third semiconductor layer, a light-emitting layer, a fourth semiconductor layer and a third contact electrode, wherein the third semiconductor layer, the light-emitting layer and the fourth semiconductor layer are sequentially arranged from bottom to top, and the third contact electrode is led out from the fourth semiconductor layer; the color conversion layer comprises a light conversion layer and a distributed Bragg reflection layer which are sequentially arranged from bottom to top. Wherein,
applying a low-power variable input signal between the first contact electrode and the second contact electrode, and applying a forward bias voltage between the first contact electrode and the third contact electrode to drive the triode light-emitting device to emit light; the triode amplifies the power of the input signal to drive the light-emitting chip to emit light by using a low-power input signal, so that the light conversion layer is excited to realize color conversion; meanwhile, the design complexity of a driving circuit of the light-emitting device can be effectively reduced, and the integration level of the display device is improved.
Further, the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer; or the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer.
Further, the first semiconductor layer is a semiconductor layer with heavy doping concentration, and the doping concentration of the first semiconductor layer is 1 to 5 orders of magnitude higher than that of the second semiconductor layer.
Further, the host material of the second semiconductor layer includes, but is not limited to, GaAs, GaP, GaN, ZnSe, SiC, Si, ZnSe, graphene, black phosphorus, MoS2CNT, organic semiconductor materials CuPc, Alq 3.
Further, the host materials of the first semiconductor layer, the third semiconductor layer and the fourth semiconductor layer include, but are not limited to, GaAs, GaP, GaN, ZnSe, SiC, Si, ZnSe, and CuPc, Alq 3.
Further, the first contact electrode forms ohmic contact with the first semiconductor layer; the second contact electrode and the second semiconductor layer form an ohmic contact; the third contact electrode is a transparent electrode and forms an ohmic contact with the fourth semiconductor layer.
Further, when the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrode is negative, that is, the potential of the second contact electrode is lower than the potential of the first contact electrode, and the voltage signal applied between the first contact electrode and the third contact electrode is negative, that is, the potential of the third contact electrode is lower than the potential of the first contact electrode; when the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrode is positive, i.e., the potential of the second contact electrode is higher than the potential of the first contact electrode, and the voltage signal applied between the first contact electrode and the third contact electrode is positive, i.e., the potential of the third contact electrode is higher than the potential of the first contact electrode
Further, the magnitude of the voltage applied between the first contact electrode and the second contact electrode is smaller than the magnitude of the voltage applied between the first contact electrode and the third contact electrode.
Further, the Bragg reflection layer is formed by stacking two films having a high refractive index and a low refractive index, and the thickness of each film is determined by the following formula
Figure GDA0003460338130000041
Wherein N is a refractive index of the film, d is a thickness of the film, θ is a light incident angle, λ is a central wavelength, q is a constant, q is not less than 0, and when q is a positive odd number, the reflectivity has an extreme value, and if the number of stacked layers of the film of the Bragg reflection layer is x, x is N or equal to N +0.5, and N is a positive integer.
A method for manufacturing a tripolar light emitting tube based on wavelength down-conversion comprises the following steps:
s1: growing a buffer layer, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a light emitting layer and a fourth semiconductor layer on a substrate in sequence;
s2: etching to expose part of the second semiconductor layer to form an arrayed module;
s3: continuously etching the second semiconductor layer until the first semiconductor layer is exposed;
s4: growing a first contact electrode and a second contact electrode on the exposed first semiconductor layer and the exposed second semiconductor layer respectively;
s5: sequentially growing a third contact electrode and a light conversion layer on the fourth semiconductor layer, wherein the length of the light conversion layer is less than that of the third contact electrode, and the width of the light conversion layer is equal to that of the third contact electrode;
s6: and depositing a distributed Bragg reflection layer on the surface of the light conversion layer, wherein the size of the distributed Bragg reflection layer is consistent with that of the light conversion layer.
Preferably, the thickness of the second semiconductor layer is 0.5nm to 2 μm, the thickness of the first semiconductor layer is 0.5 μm to 5 μm, the thickness of the third semiconductor layer is 0.5 μm to 5 μm, and the thickness of the fourth semiconductor layer is 10nm to 2 μm.
Preferably, the light-emitting layer comprises a multiple quantum well active layer and a hole blocking layer or an electron blocking layer for improving the carrier recombination efficiency; but not limited to, an organic thin film having a light emitting function and a functional layer for improving carrier recombination efficiency; but not limited to, a nanomaterial film having a light emitting function and a functional layer for improving carrier recombination efficiency.
Preferably, the light conversion layer can be a quantum dot material or a fluorescent powder or a combination of the quantum dot material or the fluorescent powder and other polymers, and the light emitting wavelength is longer than that of the light emitting layer.
Preferably, the combination of high and low refractive index films includes, but is not limited to: TiO 22/Al2O3、TiO2/SiO2、Ta2O5/Al2O3、HfO2/SiO2The former is a high refractive index film, and the latter is a low refractive index film; the distributed Bragg reflection layer is used for totally reflecting light excited by the light emitting chip and highly transmitting light generated by the light conversion layer, so that the conversion efficiency of the device is improved.
Preferably, the substrate may be, but not limited to, sapphire, GaAs, GaP, GaN, ZnSe, SiC, Si, ZnSe; the substrate may remain on the device or may be removed during the fabrication of the wavelength down conversion based triode.
Preferably, the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the light emitting layer and the fourth semiconductor layer may be formed by, but not limited to, epitaxy, deposition, plating, assembly, transfer, and attachment.
Preferably, the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the light emitting layer, and the fourth semiconductor layer may be single-layer semiconductor structures having the same doping concentration, or may be multi-layer semiconductor structures having graded or graded doping concentrations.
Compared with the prior art, the invention has the following beneficial effects:
1. compared with an ordinary LED, the triode luminescent device has the advantages that one more driving electrode is arranged, and the triode luminescent device can be used as a control end to amplify the power of the input signal, so that the LED is driven by a low-power input signal; meanwhile, the design complexity of a driving circuit of the LED display device, particularly the mu LED display device, can be effectively reduced, and the integration level of the LED display device is improved;
2. the distributed Bragg reflection layer is arranged on the light conversion layer, so that light excited by the light emitting chip is effectively reflected totally, the light generated by the light conversion layer is transmitted highly, the conversion efficiency of the device is improved, and a scheme is provided for a colorized triode display device;
3. the manufacturing method is simple, convenient, rapid and effective, can obtain light of various colors through the color conversion layer, has high color rendering property, color purity and conversion efficiency, is beneficial to promoting semiconductor display, and is characterized by the industrialization efficiency and market competitiveness of mu LED display.
Drawings
Fig. 1 is a schematic cross-sectional view of a triode based on wavelength down-conversion according to an embodiment of the present invention.
Fig. 2 is a process for manufacturing a triode based on wavelength down-conversion according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of a method for driving a triode based on wavelength down-conversion according to an embodiment of the present invention.
Fig. 4 is a driving equivalent circuit of a triode based on wavelength down-conversion according to an embodiment of the present invention.
In the figure, 1-substrate, 2-buffer layer, 301-first semiconductor layer, 302-second semiconductor layer, 303-third semiconductor layer, 304-light emitting layer, 305-fourth semiconductor layer, 401-first contact electrode, 402-second contact electrode, 403-transparent third contact electrode, 5-light conversion layer, 6-distributed bragg reflection layer.
Detailed Description
The invention is further explained below with reference to the drawings and the embodiments.
Referring to fig. 1, the present invention provides a wavelength down-conversion based triode light emitting diode, which includes a substrate, a buffer layer, a triode, a blue or ultraviolet light emitting chip and a color conversion layer, which are sequentially disposed from bottom to top; the triode comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer which are sequentially arranged from bottom to top, and further comprises a first contact electrode led out from the first semiconductor layer and a second contact electrode led out from the second semiconductor layer; the light-emitting chip comprises a third semiconductor layer, a light-emitting layer, a fourth semiconductor layer and a third contact electrode, wherein the third semiconductor layer, the light-emitting layer and the fourth semiconductor layer are sequentially arranged from bottom to top, and the third contact electrode is led out from the fourth semiconductor layer; the color conversion layer comprises a light conversion layer and a distributed Bragg reflection layer which are sequentially arranged from bottom to top.
In this embodiment, a low-power variable input signal is applied between the first contact electrode and the second contact electrode, and a forward bias voltage is applied between the first contact electrode and the third contact electrode to drive the triode light-emitting device to emit light; the triode amplifies the power of the input signal, so that the light-emitting chip is driven to emit light by using a low-power input signal, the light conversion layer is excited, and color conversion is realized.
In this embodiment, the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer; or the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer.
In this embodiment, the third semiconductor layer is a collector of the triode and is also a cathode or an anode of the light emitting chip. The first semiconductor layer is a semiconductor layer with heavy doping concentration, and the doping concentration of the first semiconductor layer is 1 to 5 orders of magnitude higher than that of the second semiconductor layer. Preferably, the first semiconductor layer has a thickness of 0.5 to 5 μm, the second semiconductor layer has a thickness of 0.5 to 2 μm, the third semiconductor layer has a thickness of 0.5 to 5 μm, and the fourth semiconductor layer has a thickness of 10nm to 2 μm.
In the present embodiment, the host material of the second semiconductor layer includes, but is not limited to, GaAs, GaP, an inorganic semiconductor material,GaN, ZnSe, SiC, Si, ZnSe, graphene, black phosphorus, MoS2CNT, organic semiconductor materials CuPc, Alq 3.
In the present embodiment, the host materials of the first semiconductor layer, the third semiconductor layer and the fourth semiconductor layer include, but are not limited to, GaAs, GaP, GaN, ZnSe, SiC, Si, ZnSe, and CuPc, Alq 3.
In this embodiment, the first contact electrode forms an ohmic contact with the first semiconductor layer; the second contact electrode and the second semiconductor layer form an ohmic contact; the third contact electrode is a transparent electrode and forms an ohmic contact with the fourth semiconductor layer.
Preferably, when the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrode is negative, that is, the potential of the second contact electrode is lower than the potential of the first contact electrode, and the voltage signal applied between the first contact electrode and the third contact electrode is negative, that is, the potential of the third contact electrode is lower than the potential of the first contact electrode.
When the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrode is positive, that is, the potential of the second contact electrode is higher than the potential of the first contact electrode, and the voltage signal applied between the first contact electrode and the third contact electrode is positive, that is, the potential of the third contact electrode is higher than the potential of the first contact electrode.
Preferably, the magnitude of the voltage applied between the first contact electrode and the second contact electrode is smaller than the magnitude of the voltage applied between the first contact electrode and the third contact electrode.
In this embodiment, the light emitting layer includes, but is not limited to, a multiple quantum well active layer and a hole blocking layer or an electron blocking layer for improving carrier recombination efficiency, an organic thin film having a light emitting function and a functional layer for improving carrier recombination efficiency, a nanomaterial thin film having a light emitting function and a functional layer for improving carrier recombination efficiency.
In this embodiment, the light conversion layer uses a red or green quantum dot material or a phosphor or a combination of the two and other polymers, and the light emission wavelength is longer than that of the light emitting layer.
In this embodiment, the bragg reflective layer is formed by stacking two kinds of thin films having a high refractive index and a low refractive index, and the thickness of each thin film is determined by the following formula
Figure GDA0003460338130000101
Wherein N is a refractive index of the film, d is a thickness of the film, θ is a light incident angle, λ is a central wavelength, q is a constant, q is not less than 0, and when q is a positive odd number, the reflectivity has an extreme value, and if the number of stacked layers of the film of the Bragg reflection layer is x, x is N or equal to N +0.5, and N is a positive integer.
Preferably, the combination of high and low refractive index films includes, but is not limited to: TiO 22/Al2O3、TiO2/SiO2、Ta2O5/Al2O3、HfO2/SiO2The former is a high refractive index film, and the latter is a low refractive index film; the distributed Bragg reflection layer is used for totally reflecting light excited by the light emitting chip and highly transmitting light generated by the light conversion layer, so that the conversion efficiency of the device is improved.
In the present embodiment, referring to fig. 2, there is provided a method for manufacturing a three-pole light emitting tube based on wavelength down-conversion, comprising the steps of:
s1: growing a buffer layer, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a light emitting layer and a fourth semiconductor layer on a substrate in sequence;
s2: etching to expose part of the second semiconductor layer to form an arrayed module;
s3: continuously etching the second semiconductor layer until the first semiconductor layer is exposed;
s4: growing a first contact electrode and a second contact electrode on the exposed first semiconductor layer and the exposed second semiconductor layer respectively;
s5: sequentially growing a third contact electrode and a light conversion layer on the fourth semiconductor layer, wherein the length of the light conversion layer is less than that of the third contact electrode, and the width of the light conversion layer is equal to that of the third contact electrode;
s6: and depositing a distributed Bragg reflection layer on the surface of the light conversion layer, wherein the distributed Bragg reflection layer is consistent with the size of the light conversion layer. In the present embodiment, the substrate is made of materials including, but not limited to, sapphire, GaAs, GaP, GaN, ZnSe, SiC, Si, ZnSe; the substrate may remain on the device or may be removed during the fabrication of the wavelength down conversion based triode.
In this embodiment, the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the light emitting layer and the fourth semiconductor layer may be formed by, but not limited to, epitaxy, deposition, plating, assembly, transfer, and attachment. Preferably, the buffer layer, the first semiconductor layer, the second semiconductor layer, the third type semiconductor layer, the light emitting layer, and the fourth semiconductor layer may have a single-layer semiconductor structure having the same doping concentration, or may have a multi-layer semiconductor structure having a graded or graded doping concentration.
The first embodiment is as follows:
referring to fig. 1, In this embodiment, the substrate 1 is a sapphire substrate and is an a-plane, the buffer layer 2 is made of AlN, the first semiconductor layer 301 is an N-GaN layer, the second semiconductor layer 302 is a P-GaN layer, the third semiconductor layer 303 is an N-GaN layer, and the light emitting layer 304 is blue light and consists of 3 periods of InaGa1-aN quantum well active layer and AlbGa1-bA hole blocking layer or an electron blocking layer of N composition, and the fourth semiconductor layer 305 is P-GaN. The first contact electrode 401 and the second contact electrode 402 are gold copper electrodes, and the transparent third contact electrode 403 is Indium Tin Oxide (ITO). The light conversion layer 5 is a red quantum dot film, distributed Bragg reverseThe emitter layer 6 is made of TiO2And Al2O3Two kinds of films are alternately stacked.
In this embodiment, preferably, the first semiconductor layer, the third semiconductor layer are Mg-doped N-GaN, and the second and fourth semiconductor layers are Si-doped P-GaN.
In this embodiment, it is preferable that the Mg doping concentration of the first semiconductor layer is 1 × 1021cm-3The doping concentration of Si in the second semiconductor layer is 5 × 1018cm-3The Mg doping concentration of the third semiconductor layer is 1 multiplied by 1019cm-3The fourth semiconductor layer has Si doping concentration of 5 × 1018cm-3。
Referring to fig. 1 and fig. 2-3, a detailed description is made of a method for manufacturing a triode based on wavelength down-conversion according to this embodiment, specifically implemented by the following steps:
s11: placing a sapphire substrate 1 in an MOCVD reaction chamber, setting the temperature to be 800-1200 ℃, introducing trimethyl aluminum and ammonia gas, and growing a buffer layer 2, a first semiconductor layer N-GaN layer 301, a second semiconductor layer P-GaN layer 302, a third semiconductor layer N-GaN layer 303, a multiple quantum well light-emitting layer 304 and a fourth semiconductor layer P-GaN layer 305 on the sapphire substrate 1 by using hydrogen as a carrier, wherein the thicknesses of the buffer layer 2, the first semiconductor layer N-GaN layer 301, the second semiconductor layer P-GaN layer 302, the third semiconductor layer N-GaN layer 303, the multiple quantum well light-emitting layer 304 and the fourth semiconductor layer P-GaN layer 305 are 1000nm, 2 mu m, 0.5 mu m, 3 mu m, 200nm and 1 mu m respectively;
s12: etching the layers by adopting ICP (inductively coupled plasma) until part of the second semiconductor layer 302 is exposed to form an arrayed module;
s13: continuing to etch the second semiconductor layer until the first semiconductor layer 301 is exposed;
s14: growing a first contact electrode 401 and a second contact electrode 402 on the exposed surfaces of the first semiconductor layer 301 and the second semiconductor layer 302 respectively;
s15: respectively preparing a third contact electrode 403 and a red quantum dot conversion layer 5 on the surface of the fourth semiconductor layer 305 by deposition, wherein the length of the red conversion layer 5 is less than that of the third contact electrode 402;
s16: preparing distributed Bragg reflection layer 6 on red conversion layer 5 by physical vapor deposition or chemical vapor deposition, and adjusting the distributionThe thickness of the high-refractive-index film and the low-refractive-index film of the distributed Bragg reflection layer and the number of the alternately stacked film layers enable the film to reflect blue light and transmit red light in a total reflection mode, and the length of the prepared distributed Bragg reflection layer 6 is the same as that of the red conversion layer 5. Preferably, TiO2Thickness of 45nm, Al2O3Has a thickness of 67nm, the DBR layer comprises 13 stacked films, and the topmost and bottommost layers of the stacked films are TiO2。
In the present embodiment, referring to fig. 3, a small power variable input signal V is applied between the first contact electrode and the second contact electrode1While applying a forward bias voltage V between the first contact electrode and the transparent third contact electrode2The blue light emitting triode chip can emit light, the power amplification effect on the input signal is achieved, the LED is driven by the low-power input signal, then the blue light excites the red conversion layer to generate red light, all the blue light is reflected back under the action of the distributed Bragg reflection layer, the red conversion layer material is excited again, the red light is emitted as much as possible, and efficient color conversion is achieved.
In this embodiment, referring to fig. 4, the NPN transistor is connected to the common emitter of the LED, and the base and the emitter form an input loop, i.e. a variable input signal V with small power is applied between the first contact and the second contact1The collector and the emitter form an output loop, i.e. a forward bias voltage V is applied between the first contact and the third contact2And the triode can drive the LED to emit light.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.

Claims (7)

1. A tripolar light-emitting tube based on wavelength down-conversion is characterized by comprising a substrate, a buffer layer, a triode, a light-emitting chip and a color conversion layer which are sequentially arranged from bottom to top; the triode comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer which are sequentially arranged from bottom to top, and further comprises a first contact electrode led out from the first semiconductor layer and a second contact electrode led out from the second semiconductor layer; the light-emitting chip comprises a third semiconductor layer, a light-emitting layer, a fourth semiconductor layer and a third contact electrode, wherein the third semiconductor layer, the light-emitting layer and the fourth semiconductor layer are sequentially arranged from bottom to top, and the third contact electrode is led out from the fourth semiconductor layer; the color conversion layer comprises a light conversion layer and a distributed Bragg reflection layer which are sequentially arranged from bottom to top;
applying a low-power variable input signal between the first contact electrode and the second contact electrode, and applying a forward bias voltage between the first contact electrode and the third contact electrode to drive the three-pole light-emitting tube to emit light;
the first contact electrode forms ohmic contact with the first semiconductor layer; the second contact electrode and the second semiconductor layer form an ohmic contact; the third contact electrode is a transparent electrode and forms ohmic contact with the fourth semiconductor layer;
the first semiconductor layer is a heavily doped semiconductor layer, and the doping concentration of the first semiconductor layer is 1 to 5 orders of magnitude higher than that of the second semiconductor layer;
when the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrode is negative, that is, the potential of the second contact electrode is lower than that of the first contact electrode, and the voltage signal applied between the first contact electrode and the third contact electrode is negative, that is, the potential of the third contact electrode is lower than that of the first contact electrode;
when the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrode is positive, that is, the potential of the second contact electrode is higher than the potential of the first contact electrode, and the voltage signal applied between the first contact electrode and the third contact electrode is positive, that is, the potential of the third contact electrode is higher than the potential of the first contact electrode.
2. The wavelength down-conversion-based tripolar light emitting tube according to claim 1, characterized in that: the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer; or the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer.
3. The wavelength down-conversion-based tripolar light emitting tube according to claim 1, characterized in that: the host material of the second semiconductor layer includes but is not limited to GaAs, GaP, GaN, ZnSe, SiC, Si, graphene, black phosphorus, MoS2CNT, and one or more of organic semiconductor materials CuPc and Alq 3.
4. The wavelength down-conversion-based tripolar light emitting tube according to claim 1, characterized in that: the host materials of the first semiconductor layer, the third semiconductor layer and the fourth semiconductor layer include but are not limited to inorganic semiconductor materials GaAs, GaP, GaN, ZnSe, SiC and Si, and one or more of organic semiconductor materials CuPc and Alq 3.
5. A wavelength down-conversion based triode according to claim 1, wherein the magnitude of the voltage applied between the first contact electrode and the second contact electrode is smaller than the magnitude of the voltage applied between the first contact electrode and the third contact electrode.
6. The wavelength down-conversion-based tripolar light emitting tube according to claim 1, characterized in that: the Bragg reflection layer is formed by stacking two films with high refractive index and low refractive index, and the thickness of each film is determined by the following formula
Figure DEST_PATH_IMAGE002
Wherein,
Figure DEST_PATH_IMAGE004
is the refractive index of the thin film,
Figure DEST_PATH_IMAGE006
is the thickness of the film, and is,
Figure DEST_PATH_IMAGE008
as an angle of incidence of the light,
Figure DEST_PATH_IMAGE010
is the center wavelength of the light emitted by the light source,
Figure DEST_PATH_IMAGE012
is a constant number of times, and is,
Figure DEST_PATH_IMAGE014
and when
Figure 737286DEST_PATH_IMAGE012
When the number of the thin film layers is positive or odd, the reflectivity has an extreme value, and the number of the thin film layers of the Bragg reflection layer is x, which is the value of x
Figure DEST_PATH_IMAGE016
Or equal to
Figure DEST_PATH_IMAGE018
，
Figure 575798DEST_PATH_IMAGE016
Is a positive integer.
7. A method for manufacturing a tripolar light emitting tube based on wavelength down-conversion is characterized by comprising the following steps:
s1: growing a buffer layer, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a light emitting layer and a fourth semiconductor layer on a substrate in sequence;
s2: etching to expose part of the second semiconductor layer to form an arrayed module;
s3: continuously etching the second semiconductor layer until the first semiconductor layer is exposed;
s4: growing a first contact electrode and a second contact electrode on the exposed first semiconductor layer and the exposed second semiconductor layer respectively;
s5: sequentially growing a third contact electrode and a light conversion layer on the fourth semiconductor layer, wherein the length of the light conversion layer is less than that of the third contact electrode, and the width of the light conversion layer is equal to that of the third contact electrode;
s6: and depositing a distributed Bragg reflection layer on the surface of the light conversion layer, wherein the size of the distributed Bragg reflection layer is consistent with that of the light conversion layer.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1941440A (en) * 2005-09-30 2007-04-04 冲数据株式会社 Composite semiconductor device, print head and image forming apparatus
CN201100919Y (en) * 2006-12-12 2008-08-13 哈尔滨理工大学 Sub-micron organic semiconductor film audion
CN104576628A (en) * 2013-10-25 2015-04-29 广东德力光电有限公司 Novel white light LED structure and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1941440A (en) * 2005-09-30 2007-04-04 冲数据株式会社 Composite semiconductor device, print head and image forming apparatus
CN201100919Y (en) * 2006-12-12 2008-08-13 哈尔滨理工大学 Sub-micron organic semiconductor film audion
CN104576628A (en) * 2013-10-25 2015-04-29 广东德力光电有限公司 Novel white light LED structure and manufacturing method thereof

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