CN111834491A - Preparation method of solar cell and solar cell - Google Patents
Preparation method of solar cell and solar cell Download PDFInfo
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- CN111834491A CN111834491A CN202010651720.XA CN202010651720A CN111834491A CN 111834491 A CN111834491 A CN 111834491A CN 202010651720 A CN202010651720 A CN 202010651720A CN 111834491 A CN111834491 A CN 111834491A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a preparation method of a solar cell and the solar cell, relates to the technical field of solar cells, and aims to solve the problem that laser directly acts on the surface of a silicon substrate to cause surface damage of the silicon substrate. The preparation method of the solar cell comprises the following steps: providing a silicon substrate and a glass substrate; covering the glass substrate above the silicon substrate, wherein the doping material layer is positioned on one side of the glass substrate facing the silicon substrate; and scanning the glass substrate by laser patterning. The solar cell is manufactured by the manufacturing method. The preparation method of the solar cell provided by the invention is used for manufacturing the solar cell.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof.
Background
At present, a commonly used method for improving front performance of an emitter and a surface-Passivated solar cell (Passivated emitter and solar cell, abbreviated as PERC) is a laser local heavy doping technology.
The existing laser local heavy doping technology bombards impurity atoms on the surface of a silicon wafer through laser pulses, and the impurity atoms are doped into an electric active area of the silicon wafer by utilizing the high energy density of laser so as to realize the local heavy doping on the front surface of the silicon wafer. Currently, the most widely used dopant source is the phosphosilicate glass source. Because the high-energy laser directly acts on the surface of the silicon wafer, the high-energy density of the laser easily causes damage to the surface of the silicon wafer. These surface damages are typical recombination centers and can severely affect the minority carrier lifetime of the cell, resulting in increased auger recombination and reduced cell efficiency.
Disclosure of Invention
The invention aims to provide a preparation method of a solar cell, which aims to reduce the damage of laser to the surface of a silicon substrate, accurately control a doping process and improve the efficiency of the solar cell.
In a first aspect, the present invention provides a method of fabricating a solar cell. The preparation method of the solar cell comprises the following steps: providing a silicon substrate and a glass substrate; the surface of the glass substrate is provided with a doping material layer.
Covering a glass substrate above the silicon substrate, wherein the doped material layer is positioned on one side of the glass substrate facing the silicon substrate; scanning the glass substrate by laser patterning; the doped material layer contains doping elements which are doped on the silicon substrate in a patterning mode under the action of laser.
According to the preparation method of the solar cell, the glass substrate covers the silicon substrate, and the doping material layer is located on one side, facing the silicon substrate, of the glass substrate, so that when the glass substrate is scanned by laser patterning, most of laser energy is absorbed by the glass substrate, and the remaining small part of energy is irradiated on the doping material layer and the silicon substrate. And when the glass substrate absorbs the laser energy, local heat may be generated. At this time, the doping material contained in the doping material layer is gradually vaporized by the combined action of the heat and a small portion of the laser irradiated thereon, so that the doping material layer is adsorbed on the surface of the silicon substrate by the self-adsorption action. In this case, the doping element contained in the doping material layer can be driven into the silicon substrate in a patterning mode, so that the purpose of doping the silicon substrate to form the selective emitter is achieved.
And because the energy of the laser irradiated on the silicon substrate is lower, the surface damage of the laser to the silicon substrate can be reduced when the glass substrate is scanned by laser patterning, so that the number of small pits formed on the surface of the silicon substrate due to damage can be reduced when the glass substrate is scanned by laser patterning, and the surface recombination center of the silicon substrate is reduced. At the moment, the Auger recombination incidence rate of the surface of the silicon substrate is low, and forward bias diffusion current can be reduced, so that the open-circuit voltage and the filling factor of the battery are improved, and the efficiency of the battery is improved.
In addition, because the glass substrate is a poor thermal conductor, when the laser patterning scans on the glass substrate, a large temperature gradient is generated between the patterning scanning area and the peripheral area, and a local high temperature is formed, so that the precise control of the selective doping is realized.
In one possible implementation manner, one surface of the silicon substrate is a textured surface, and the glass substrate is located above the textured surface. The silicon substrate is firstly subjected to texturing treatment before laser doping, and a textured surface formed on the surface absorbs more light by using a light trapping principle, so that the light utilization rate is improved. At the moment, the glass substrate with the doping material layer is positioned above the textured surface of the silicon substrate.
In one possible implementation, the glass substrate may be annealed glass, which may be one or more of tempered glass, quartz glass, or organic glass. The toughened glass, the quartz glass and the organic glass have high heat resistance, and can endure long-term laser scanning after high-temperature annealing treatment, so that the glass substrate is repeatedly used, and the cost is saved.
In a possible implementation manner, the material of the doped material layer is an N-type doped material or a P-type doped material.
In one possible implementation, the doping material layer is covered on the glass substrate.
In a possible implementation manner, the thickness of the doped material layer is 50nm to 100 nm.
In one possible implementation manner, the silicon substrate is a P-type substrate, the material of the doping material layer is phosphorosilicate glass, and the doping concentration of phosphorus is 3 × 1020cm-3～5×1020cm-3。
In one possible implementation manner, the silicon substrate is an N-type substrate, the doping material layer is made of borosilicate glass, and the doping concentration of boron is 1 × 1020cm-3～2×1020cm-3。
In a possible implementation manner, the doping material layer is a patterned doping material layer, and the pattern of the doping material layer is the same as that of the silicon substrate.
In one possible implementation mode, the laser is nanosecond pulsed ultraviolet laser with the wavelength of 300 nm-400 nm. The laser having a wavelength of 300nm to 400nm is selected because the glass substrate has high transmittance for green and red light bands, but absorbs part of the ultraviolet light. When the ultraviolet laser acts on the glass substrate, a part of energy is absorbed by the glass substrate to generate local heat, a part of energy penetrates through the glass substrate to reach the doping material layer, and the rest of energy reaches the surface of the silicon substrate. Therefore, the peak energy of the laser can be absorbed by the glass substrate and most of the doping material layer on the surface of the glass substrate, and is used for vaporizing the doping material layer to avoid high-energy damage to the surface of the silicon substrate.
In one possible implementation, the number of the silicon substrates is plural. The glass substrate is covered above a plurality of silicon substrates. A plurality of silicon substrates can be covered under one piece of glass, and a plurality of laser heads are adopted for doping at the same time, so that the yield is improved, and the batch production is realized.
In a second aspect, the present invention provides a solar cell, which is manufactured by applying the first aspect or any one of the possible implementation manners of the first aspect.
The beneficial effects of the solar cell provided by the second aspect are the same as those of the first aspect or any possible implementation manner of the first aspect, and are not described herein again.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1A to fig. 1E are schematic views of a solar cell manufacturing method at various stages according to an embodiment of the present invention;
fig. 2 is a schematic view of mass production using a method of manufacturing a solar cell according to an embodiment of the present invention.
Detailed Description
In order to facilitate clear description of technical solutions of the embodiments of the present invention, in the embodiments of the present invention, terms such as "first" and "second" are used to distinguish the same items or similar items having substantially the same functions and actions. For example, the first threshold and the second threshold are only used for distinguishing different thresholds, and the sequence order of the thresholds is not limited. Those skilled in the art will appreciate that the terms "first," "second," etc. do not denote any order or quantity, nor do the terms "first," "second," etc. denote any order or importance.
It is to be understood that the terms "exemplary" or "such as" are used herein to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" or "e.g.," is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.
In the present invention, "at least one" means one or more, "a plurality" means two or more. "and/or" describes the association relationship of the associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone, wherein A and B can be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, at least one (one) of a, b, or c, may represent: a, b, c, a and b combination, a and c combination, b and c combination, or a, b and c combination, wherein a, b and c can be single or multiple.
In recent years, the solar cell technology has been developed rapidly, and the laser local heavy doping technology has become a basic process for improving the front performance of an emitter and a surface Passivated solar cell (PERC). According to the traditional laser local heavy doping, phosphorus impurities in phosphorosilicate glass are used as a phosphorus source, and are driven into a silicon wafer body and activated in a high-energy laser scanning mode, so that the local heavy doping on the front side of the silicon wafer is realized. Since the high-energy laser directly acts on the surface of the silicon wafer, certain damage is caused to the surface of the silicon wafer while doping. And performing SEM analysis on the surface of the silicon wafer after laser doping, wherein partial small pits appear at the top of the pyramid on the surface of the silicon wafer. The small holes become recombination centers on the front surface of the solar cell, so that the Auger recombination is increased, and the electrical property of the solar cell is prevented from being further improved.
In the prior art, graphite is used as a middle transfer heat conduction layer, laser acts on the surface of graphene, graphite, carbon fiber or C/C composite material, and the material absorbs laser energy and conducts heat to the surface of a silicon wafer. However, this method has the following problems:
firstly, the graphene, graphite, carbon fiber or C/C composite material is expensive, and the graphite and carbon fiber material is brittle, and is very easy to crack after being locally subjected to high temperature (800-1100 ℃) for a long time, so that the graphene, graphite, carbon fiber or C/C composite material cannot be applied to actual batch production.
Secondly, the selective doping mainly depends on local high temperature treatment, and because of the strong thermal conductivity of graphite, a large temperature gradient is difficult to generate between a laser heating area and a peripheral area. Precise control of the selective doping is difficult to achieve by means of thermal conduction.
In order to overcome the above problems and avoid damage to the surface of the silicon substrate, embodiments of the present invention provide a solar cell and a method for manufacturing the same. According to the preparation method of the solar cell, the glass substrate can be used as a medium, the silicon substrate is irradiated by laser patterning, and doping of the silicon substrate is achieved, so that damage of laser to the surface of the silicon substrate is reduced, the number of recombination centers on the surface of the silicon substrate is reduced, open-circuit voltage and filling factors of the cell are improved, and cell efficiency is improved.
The preparation method of the solar cell of the embodiment of the invention can be used for preparing PERC cells. The following describes a method for manufacturing a solar cell according to an embodiment of the present invention with reference to the drawings.
Fig. 1A to fig. 1E are schematic diagrams of states of a method for manufacturing a solar cell at various stages according to an embodiment of the present invention. The preparation method of the solar cell provided by the embodiment of the invention comprises the following steps:
as shown in fig. 1A, a silicon substrate 4 is provided. The silicon substrate 4 may be a silicon substrate 4 having a PN junction. The silicon substrate 4 includes opposing P-type and N-type layers. The P-type layer contains an impurity element that is a group iiia element including, but not limited to, one or more of boron, aluminum, gallium, indium, thallium, etc., and the N-type layer contains an impurity element that is a group VA element including, but not limited to, one or more of P, As, Sb, etc.
As shown in fig. 1A, one surface of the silicon substrate 4 is a textured surface. The textured surface may be a light facing surface of the silicon substrate 4 or a backlight surface of the silicon substrate 4. The textured surface may be formed before the PN junction of the silicon substrate 4 is formed, or may be formed after the PN junction of the silicon substrate 4 is formed.
For example, as shown in fig. 1A, when a P-type silicon substrate is used to make a PN junction, an alkali solution may be used to perform anisotropic etching on the surface of the P-type silicon substrate used as a light-facing surface, so that a textured surface is formed on the surface of the P-type silicon substrate; and then, carrying out N-type impurity doping on the P-type silicon substrate by adopting a diffusion process or an ion implantation process to form a silicon substrate 4 with a PN junction. The N-type impurity is a group VA element, including but not limited to one or more of P, As, Sb, and the like. For example: common POCl3、PH3、AsH3Group VA elements containing P, AsOxides of elements (e.g., silicon oxide), and the like. The alkali solution used may be one or more of sodium hydroxide, potassium hydroxide, etc., but is not limited thereto.
As shown in fig. 1A, the diffusion method for the P-type silicon substrate may be phosphorus oxychloride liquid source diffusion, chain diffusion after spraying phosphoric acid aqueous solution, chain diffusion after screen printing phosphorus slurry, etc. Taking phosphorus oxychloride liquid source diffusion as an example, the silicon substrate 4 after the texturing treatment is placed into a quartz boat and pushed into a diffusion furnace, oxygen is introduced, the temperature in the furnace is adjusted, and small nitrogen is opened for diffusion, wherein the small nitrogen is taken as a portable source. And after the diffusion is finished, closing the small nitrogen and the oxygen, withdrawing the quartz boat to a furnace mouth, cooling, and taking out the diffused silicon substrate 4. Phosphorus oxychloride liquid source diffusion is a commonly used diffusion method at present, and has the advantages of high production efficiency, uniform and flat obtained PN junction, good diffusion layer surface and the like.
For another example, as shown in fig. 1A, when a PN junction is formed by using an N-type silicon substrate, a P-type impurity is diffused on the N-type silicon substrate to form a silicon substrate 4 having a PN junction. The P-type impurity is a group iiia element, including but not limited to one or more of boron, aluminum, gallium, indium, thallium, and the like. The doping source may be determined according to the kind of impurity element to be doped.
As shown in FIG. 1A, for the diffusion method of N-type silicon substrate, liquid source boron diffusion can be adopted, and the commonly used liquid source is trimethyl borate B (CH)3O)3Tripropylborate and boron tribromide BBr3Anhydrous trimethyl borate B (CH)3O)3One or more of (a). Using the diffusion of a liquid source of trimethyl borate as an example, trimethyl borate can decompose diboron trioxide (B) at high temperatures (above 500 ℃ C.)2O3) And the diboron trioxide can react with the silicon substrate 4 at the temperature of about 900 ℃ to generate boron atoms which are deposited on the surface of the N-type silicon substrate. Introducing dry oxygen, adjusting the temperature in the diffusion furnace, exhausting air in the pipeline, and heating the water bath bottle. And (3) loading the N-type silicon substrate subjected to the texturing treatment into a quartz boat, pushing the quartz boat into a diffusion furnace, introducing dry oxygen, introducing wet oxygen and finally introducing dry oxygen. After the diffusion is finished, stopping introducing oxygen, withdrawing the quartz boat to a furnace mouth, and passing through boronThe diffused N-type silicon substrate is poured on a copper block for quenching to prepare a silicon substrate 4.
As shown in fig. 1A, after the silicon substrate 4 is diffused, a PECVD method may be used to perform double-sided passivation on the silicon substrate 4, so that a first passivation layer is formed on the front side of the silicon substrate 4 and a second passivation layer is formed on the back side of the silicon substrate 4. In terms of material, the first passivation layer and the second passivation layer may be made of one or more of silicon oxide, silicon nitride, and aluminum oxide. In terms of structure, the first passivation layer and the second passivation layer may have a stacked structure of passivation layers made of different materials, or may have a single-layer structure made of the same material.
As shown in fig. 1A, taking the PERC cell as an example, the first passivation layer may be a front passivation stack formed of a silicon dioxide film and a silicon nitride film, and the second passivation layer may include a back passivation stack formed of an aluminum oxide film and a silicon nitride film. And then, patterning laser grooving is carried out on the first passivation layer and the second passivation layer, so that local areas of the front surface and the back surface of the silicon substrate 4 are exposed, and a channel is prepared for a subsequent metallization process.
As shown in fig. 1A, in order to reduce the metal recombination rate, a selective emitter needs to be fabricated by heavily doping a local region on the front surface of the silicon substrate 4, and then the front surface and the back surface of the silicon substrate 4 are metalized, thereby completing the fabrication of the solar cell. As for the metallization process, a screen printing process or the like can be selected to be implemented in combination with a sintering process. Of course, it is also possible to perform heavy doping on a local region on the back surface of the silicon substrate 4 to fabricate a local field contact structure, and then perform metallization on the front surface and the back surface of the silicon substrate 4. It is to be understood that the heavy doping of the local regions of the front and/or back side of the silicon substrate 4 may be performed before the double-side passivation process or after the double-side passivation process.
As shown in fig. 1B, in order to heavily dope the silicon substrate 4, the method for manufacturing a solar cell according to the embodiment of the present invention provides the glass substrate 2 along with the silicon substrate 4 shown in fig. 1A. The glass substrate 2 may be one or more of tempered glass, quartz glass, or organic glass. Before use, the glass substrate 2 needs to be subjected to high-temperature annealing treatment, the stress of the glass substrate 2 is released, the toughness of the glass substrate 2 is increased, the glass substrate 2 is prevented from being damaged in the laser irradiation process, and the glass substrate 2 subjected to the high-temperature annealing treatment can be reused. Since the glass substrate 2 is a poor thermal conductor, when the laser is patterned and scanned on the glass substrate 2, a large temperature gradient is generated between the patterned scanning area and the peripheral area, and a local high temperature is formed, so as to realize precise control of the selective doping.
As shown in fig. 1B, the surface of the glass substrate 2 has a doping material layer 3. The doping material layer 3 may be deposited on the glass substrate 2 by an Atmospheric pressure chemical deposition (APCVD), or may be deposited by other methods, but is not limited thereto.
As shown in fig. 1B, taking APCVD deposition of phosphosilicate glass as an example, the glass substrate 2 is placed in the process chamber with one side facing upward, the pressure of the process chamber is set to a low pressure of 0.2torr to 1.0torr, and the temperature of the process chamber is set to 400 ℃ to 550 ℃. Supplying Silane (SiH) to the process chamber4) Phosphane (PH)3) Oxygen (O)2) And argon (Ar), Silane (SiH)4) Phosphane (PH)3) The chemical reaction is carried out at 400-550 ℃ and under the low-pressure environment of 0.2-1.0 torr, and then the phosphorosilicate glass is formed on one surface of the glass substrate 2.
As shown in fig. 1B, the thickness of the doped material layer 3 is set according to actual needs, and may be between 50nm and 100 nm. For example, the thickness of the doped material layer 3 may be 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, or the like.
As shown in fig. 1B, in terms of the size of the doping material layer 3, the size of the doping material layer 3 may or may not completely coincide with the size of the glass substrate 2, as long as the doping material layer 3 completely covers the surface of the silicon substrate 4 to be doped.
In one example, as shown in fig. 1B, when the doped material layer 3 has a size that can completely coincide with the size of the glass substrate 2, the doped material layer 3 completely covers the glass substrate 2, so as to be applied in more scenes and suitable for different local patterning doping requirements. At this time, the glass substrate 2 may be completely covered on the surface of the silicon substrate 4 to be doped, or a plurality of glass substrates 2 may be combined together so that the surface of each silicon substrate 4 is completely covered with the glass substrate 2.
In another example, as shown in fig. 1C, the doping material layer 3 may be a pattern overlapping with the doping pattern of the silicon substrate 4, and the glass substrate 2 and the silicon substrate 4 need to be patterned in alignment for specific use. The design can reduce the waste of doping materials and save the cost.
As shown in fig. 1B and fig. 1C, regarding the material of the doped material layer 3, the material of the doped material layer 3 is an N-type doped material or a P-type doped material. The material of the doped material layer 3 may be an N-type doped material, and the N-type doped material may be an N-type doped material including a group VA element such as phosphorus element and arsenic element. For example: when the N-type doping material is an N-type doping material including Phosphorus, the material of the doping material layer 3 may be Phosphorus Silicon Glass (PSG). When the doped material layer 3 is made of phosphorosilicate glass, the silicon substrate is a P-type substrate. The glass substrate 2 is located above the surface of the P-type substrate. At this time, the concentration of phosphorus element in the doped material layer 3 was 3 × 1020cm-3～5×1020cm-3. Of course, the N-type doping material can also be PH3、AsH3And oxides containing a group VA element such as P, As.
As shown in fig. 1B and fig. 1C, the material of the doped material layer 3 may be a P-type doped material. The P-type dopant material may be a P-type dopant material including a group iiia element such as a boron element and an aluminum element. For example: when the P-type doped material is a P-type doped material including Boron, the material of the doped material layer 3 may be Boron Silicate Glass (BSG). When the doped material layer 3 is borosilicate glass, the silicon substrate is an N-type substrate. The glass substrate 2 is located above the surface of the N-type substrate. At this time, the concentration of boron element in the doped material layer 3 was 3 × 1020cm-3～5×1020cm-3. Of course, the P-type doped material can also be B2H6Boric acidMetaboric acid, tripropylborate, boron tribromide, or an oxide containing B, Ga or other group IIIA elements.
As shown in fig. 1D, the glass substrate 2 is covered on the silicon substrate 4, and the doping material layer 3 is located on the side of the glass substrate 2 facing the silicon substrate 4. The layer of doping material 3 is now located between the glass substrate 2 and the silicon substrate 4. The silicon substrate 4 here may be a silicon substrate 4 that has been subjected to texturing. Of course, it may be a silicon substrate 4 without texturing.
After the glass substrate 2 is covered over the silicon substrate 4, the glass substrate 2 is scanned using laser patterning, as shown in fig. 1D. The doping material layer 3 contains doping elements which are doped on the silicon substrate 4 in a patterned manner under the action of laser light. The laser can be nanosecond pulse ultraviolet laser with the wavelength of 300 nm-400 nm. For example, the laser wavelength is 300nm, 320nm, 350nm, 370nm, 400nm, or the like. Since the glass substrate 2 has high transmittance for green and red light bands but can absorb part of the light in the ultraviolet band, when the ultraviolet laser patterning is applied to the glass substrate 2, a part of the energy is absorbed by the glass substrate 2, and local heat is generated. The glass substrate 2 may be annealed glass, and therefore, the glass substrate 2 is not broken by heat generated by absorption of laser energy. Another portion of the laser energy penetrates through the glass substrate 2to the doped material layer 3. Since there is typically a gap of 20 μm to 30 μm between the glass substrate 2 and the silicon substrate 4, when the doping material layer 3 is irradiated by a portion of the laser patterning, it will be vaporized rapidly in the patterned scanning region, and self-absorption reaction will occur and be absorbed to the surface of the silicon substrate 4 directly below. Under the continuous patterning scanning of the laser, the heat of the glass substrate 2 is conducted to the surface of the silicon substrate 4 right below the glass substrate 2, and meanwhile, the remaining small part of the laser penetrating through the glass substrate 2 and the doping material layer 3 acts on the surface of the silicon substrate 4 to generate heat. The doping elements adsorbed to the surface of the silicon substrate 4 under the action of the two kinds of heat are driven into the local doping region 5 of the silicon substrate 4, thereby realizing the patterned doping of the silicon substrate 4.
As shown in fig. 1D, in the whole laser doping process, the peak energy of the laser is mostly absorbed by the glass substrate 2 and the doping material layer 3 on the surface of the glass substrate 2, so that the high-energy damage of the laser to the surface of the silicon substrate 4 is avoided. Meanwhile, due to the reduction of the surface damage of the silicon substrate 4, the surface Auger recombination is reduced, so that the forward bias diffusion current is reduced, and the open-circuit voltage is increased. And as the fill factor is an important parameter reflecting the performance of the solar cell, the cell efficiency is increased with reduced auger recombination, so that the fill factor is increased. Therefore, the method provided by the embodiment of the invention can improve the open-circuit voltage and the fill factor of the solar cell and improve the efficiency of the solar cell.
As shown in fig. 1E, when the laser 1 is patterned to scan the glass substrate 2, the doping elements are heavily doped in the local doping regions of the silicon substrate 4. After the local doping of the silicon substrate 4 is completed, a heavily doped region 5 is formed. If the silicon substrate 4 is formed with the heavily doped region 5 on the light receiving surface of the silicon substrate 4, the formed heavily doped region 5 is a selective emitter. If the heavily doped region 5 formed on the silicon substrate 4 is located on the backlight surface of the silicon substrate 4, the heavily doped region 5 is formed as a local field contact structure.
Fig. 2 is a schematic diagram of mass production of a method for manufacturing a solar cell according to an embodiment of the invention. As shown in fig. 2, the number of the silicon substrates 4 is plural, and the glass substrate 2 is covered over the plural silicon substrates 4. To improve the yield, the size of the glass substrate 2 may be larger than the silicon substrate 4 or may be the same size as the silicon substrate 4. When the size of the glass substrate 2 is larger than that of the silicon substrates 4, each glass substrate 2 may cover over a plurality of silicon substrates 4, and at this time, the simultaneous doping may be performed using a plurality of laser heads 1 for patterning, to improve yield and production efficiency.
The following description will be made to further supplement the method for manufacturing a solar cell in the embodiment of the present invention by taking an N-type silicon substrate with a resistivity of 0.5 as an example. The selected glass substrate is tempered glass subjected to annealing treatment. The selected material of the doped material layer is borosilicate glass.
An N-type silicon substrate with the resistivity of 0.3-1.5 omega-cm, preferably 0.5 omega-cm, is selected for the experiment. And forming a pyramid texture surface (sodium hydroxide is used as alkali) through alkali texturing, and performing boron diffusion on the N-type silicon substrate to form a p + diffusion layer with the sheet resistance of 120-140 omega/sq. Ultrasonically cleaning the toughened glass, and depositing a borosilicate glass layer with the boron source concentration of 3% on the ultrasonically cleaned toughened glass in an APCVD (advanced chemical vapor deposition) mode. And placing the surface of the toughened glass deposited with the borosilicate glass layer on the surface of the silicon substrate, scanning by adopting nanosecond laser with the wavelength of 355nm according to a set grid line pattern to form a heavily doped layer, wherein the sheet resistance of the heavily doped layer is controlled to be 60-70 omega/sq. And after doping, removing the toughened glass, and carrying out the rest process flow on the silicon substrate. Parameters of the solar cell manufactured using the above method for manufacturing a solar cell are shown in table 1.
TABLE 1 comparison of solar cell Performance parameters
As can be seen from table 1, the conversion efficiency, short-circuit current, open-circuit voltage, and fill factor of the PERC cell fabricated using the method of fabricating a solar cell according to an embodiment of the present invention are higher than those of the PERC cell fabricated using the conventional laser doping method, in which the conversion efficiency is improved by about 0.2% abs.
In summary, the preparation method of the solar cell according to the embodiment of the invention can improve the conversion efficiency of the solar cell, and simultaneously can realize accurate control of laser selective doping and mass production.
The embodiment of the invention also provides a solar cell which can be manufactured by adopting the manufacturing method of the solar cell shown in fig. 1A to 1E.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method for manufacturing a solar cell, comprising:
providing a silicon substrate and a glass substrate; the surface of the glass substrate is provided with a doping material layer;
covering the glass substrate above the silicon substrate, wherein the doping material layer is positioned on one side of the glass substrate facing the silicon substrate;
scanning the glass substrate by laser patterning; the doping element contained in the doping material layer is doped on the silicon substrate in a patterning mode under the action of laser.
2. The method of claim 1, wherein one side of the silicon substrate is a textured surface, and the glass substrate is located above the textured surface.
3. The method for manufacturing a solar cell according to claim 1, wherein the glass substrate is one or more of tempered glass, quartz glass, and organic glass.
4. The method according to claim 1, wherein the material of the doped material layer is an N-type doped material or a P-type doped material; and/or the presence of a gas in the gas,
the doped material layer covers the glass substrate.
5. The method of claim 1, wherein the thickness of the doped material layer is 50nm to 100 nm.
6. The method for manufacturing a solar cell according to any one of claims 1 to 5, wherein the silicon substrate is a P-type substrate, and the dopant material is doped in the P-type substrateThe material layer is made of phosphorosilicate glass, and the doping concentration of phosphorus is 3 multiplied by 1020cm-3～5×1020cm-3。
7. The method according to any one of claims 1 to 5, wherein the silicon substrate is an N-type substrate, the doping material layer is borosilicate glass, and the doping concentration of boron is 1 x 1020cm-3～2×1020cm-3。
8. The method for manufacturing a solar cell according to any one of claims 1 to 5, wherein the doped material layer is a patterned doped material layer; the pattern of the doped material layer is the same as that of the silicon substrate.
9. The method for manufacturing a solar cell according to any one of claims 1 to 5, wherein the laser is a nanosecond pulsed ultraviolet laser having a wavelength of 300nm to 400 nm; and/or the presence of a gas in the gas,
the number of the silicon substrates is multiple, and the glass substrate covers the silicon substrates.
10. A solar cell produced by the method for producing a solar cell according to any one of claims 1 to 9.
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| CN115625417A (en) * | 2022-10-19 | 2023-01-20 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Laser deicing method |
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| CN108604540A (en) * | 2016-03-24 | 2018-09-28 | 国立大学法人九州大学 | The manufacturing method of laser doping device and semiconductor device |
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| US20130092664A1 (en) * | 2010-05-24 | 2013-04-18 | Purdue Research Foundation | High speed laser crystallization of particles of photovoltaic solar cells |
| CN110004472A (en) * | 2013-01-31 | 2019-07-12 | 新南创新私人有限公司 | The method of contact structures is formed on the solar cell |
| CN108604540A (en) * | 2016-03-24 | 2018-09-28 | 国立大学法人九州大学 | The manufacturing method of laser doping device and semiconductor device |
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| CN115625417A (en) * | 2022-10-19 | 2023-01-20 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Laser deicing method |
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