CN111816574B - UV film template and method for realizing passivation of clean glass by using UV film template - Google Patents
UV film template and method for realizing passivation of clean glass by using UV film template Download PDFInfo
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- CN111816574B CN111816574B CN202010473422.6A CN202010473422A CN111816574B CN 111816574 B CN111816574 B CN 111816574B CN 202010473422 A CN202010473422 A CN 202010473422A CN 111816574 B CN111816574 B CN 111816574B
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- 239000011521 glass Substances 0.000 title claims abstract description 64
- 238000002161 passivation Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
- 238000000576 coating method Methods 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 8
- 239000004816 latex Substances 0.000 claims description 12
- 229920000126 latex Polymers 0.000 claims description 12
- 238000007790 scraping Methods 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 3
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 229910014299 N-Si Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention belongs to the technical field of semiconductors, and particularly relates to a UV film template and a method for realizing passivation of clean glass by using the UV film template. According to the invention, the UV film is adhered to the surface of the silicon wafer by virtue of the self viscosity of the UV film, the chip groove is selectively filled with glass by adopting the hollowed-out area during blade coating, and the UV film template is removed after the chip groove is filled, so that residual glass powder can be thoroughly removed, and the technical problem that the surface of the silicon wafer is not clean during blade coating glass passivation in the prior art is solved; the invention obtains good glass passivation effect and can well protect PN junction interface; the glass effectively protects the upper edge and avoids the problem of poor photoresist coating.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a UV film template and a method for realizing passivation of clean glass by using the UV film template.
Background
At present, the main realization mode of voltage resistance of devices in the semiconductor industry is by passivation. And the typical mesa device is to fill glass in the mesa groove to realize reliable voltage resistance. There are three main methods for passivating with glass: the method comprises a knife scraping method, a light resistance method and an electrophoresis method, wherein the light resistance and the electrophoresis have high requirements on equipment, large investment, complex process control, poor process stability, high cost and low popularization rate. The knife scraping method has the advantages of simple equipment, low investment, simple process operation and highest popularization rate.
The knife scraping method has many advantages, but also has disadvantages. Typically, the method needs surface cleaning treatment (the whole surface is provided with glass when the silicon wafer is scraped), which is not easy to remove completely, but also can cause damage to the glass in a chip groove due to cleaning, so that interface glass to be protected is damaged, the damage can cause voltage deterioration, product scrapping or early failure, so that the electrical property of a chip is poor, the reliability is reduced, and hidden troubles are brought to the quality.
Disclosure of Invention
The invention aims to provide a UV film template and a method for realizing passivation of clean glass by using the UV film template, and solves the technical problems that the surface of a silicon wafer is not clean and the glass in a chip groove is easy to damage when a blade coating method is adopted for glass passivation in the prior art.
The UV film template comprises a UV film, wherein a plurality of sections of hollow areas are arranged on the UV film, and UV film connection areas are formed between the end parts of the adjacent hollow areas.
And the shapes of all the hollow areas and all the UV film connecting areas correspond to the chip grooves on the silicon chip.
The UV film attachment area width is greater than 0mm and less than 0.3 mm.
The silicon chip is one of GPP diode, triode and silicon controlled chip.
The UV film connection area is 2-4.
The invention discloses a method for realizing passivation of clean glass by using a UV film template, which comprises the following steps:
(1) carving a plurality of sections of carved areas on the UV film according to the pattern of the silicon chip grooves, forming a UV film connection area between the end parts of adjacent carved areas, cutting the UV film into a shape which is consistent with the size of the silicon chip according to the position of the chip pattern on the silicon chip, attaching the UV film on the silicon chip by using a microscope, wherein the carved areas correspond to the chip grooves on the silicon chip;
(2) and (3) scraping and coating glass powder on the surface of the UV film, enabling the glass powder to enter the chip groove, drying and placing the silicon wafer with the UV film under a UV lamp for irradiation after the scraping and coating are finished, and taking down the UV film, so that glass in the region except the chip groove can be thoroughly removed.
The hollowing treatment mode is laser or grinding tool hollowing.
The drying process comprises the following steps: the temperature is 80-100 deg.C, and the time is 3-10 min.
The illumination power of the UV film is 80-120mW/cm, and the illumination time is 40-45 s.
The principle of the invention is as follows: the invention utilizes the characteristic that the UV film has viscosity and the viscosity is basically eliminated after UV illumination, realizes selective filling, utilizes the UV film to hollow out hollowed-out areas according to the pattern of a chip groove so as to facilitate filling of glass, ensures the integrity of the whole film and difficult deformation of the whole film by limiting the width of the UV film connecting area to be more than 0mm and less than 0.3mm when a UV film template is stuck and covered on the surface of a silicon chip, and can automatically enter the chip groove below the connecting area when glass pulp-latex liquid is filled.
Compared with the prior art, the invention has the following beneficial effects.
(1) According to the invention, the UV film is adhered to the surface of the silicon wafer by virtue of the self viscosity of the UV film, the chip groove is selectively filled with glass by adopting the hollowed-out area during blade coating, and the UV film template is removed after the chip groove is filled, so that residual glass powder can be thoroughly removed, and the technical problem that the surface of the silicon wafer is not clean during blade coating glass passivation in the prior art is solved;
(2) the invention obtains good glass passivation effect and can well protect PN junction interface;
(3) the glass effectively protects the upper edge and avoids the problem of poor photoresist coating.
Drawings
FIG. 1 is a schematic diagram of a UV film template structure in embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a passivated silicon wafer glass in embodiment 2 of the present invention, in which: a is conventional glass passivation; and b is glass passivation by using a UV film template.
In the figure: 1. the UV film 2, the hollow-out area 3, the UV film connecting area 4, the N-Si silicon chip 5, the glass passivation layer 6, the chip groove 7 and the upper edge of the glass passivation layer.
Detailed Description
The invention will be further explained with reference to the following examples and the accompanying drawings
Example 1
As shown in fig. 1, the UV film 1 of the present invention has 4 sections of hollow areas 2, and a UV film connection area 3 is formed between the end portions of adjacent hollow areas 2.
And the shapes formed by all the hollow areas 2 and all the UV film connecting areas 3 correspond to the chip grooves on the silicon chip.
The width of the UV film attachment area 3 was 0.2 mm.
The UV film attachment area 3 is at 4.
The silicon wafer subjected to glass passivation in this example was model BTB16,3.92mm by 3.92mm silicon-controlled wafer.
Example 2
The invention discloses a method for realizing passivation of clean glass by using a UV film template, which comprises the following steps:
(1) hollowing out 4 sections of hollow areas 2 on the UV film 1 according to the pattern of the silicon chip groove, forming a UV film connecting area 3 between the end parts of the adjacent hollow areas 2, cutting the UV film 1 into a shape which is consistent with the size of the silicon chip according to the position of the chip pattern on the silicon chip, attaching the UV film 1 on the silicon chip by using a microscope, wherein the hollow areas 2 correspond to the chip groove on the silicon chip;
(2) the glass latex solution is coated on the surface of the UV film 1 in a scraping mode, the glass latex solution enters the chip groove, after the coating is finished, the silicon wafer with the UV film 1 is dried and placed under a UV lamp to irradiate, the UV film 1 can be taken down, and glass in the area except the chip groove can be thoroughly removed.
The hollowing treatment mode is laser hollowing.
The drying process comprises the following steps: the temperature is 90 deg.C and the time is 7 min.
The irradiation power of the UV film 1 was 100mW/cm, and the irradiation time was 43 s.
As shown in fig. 2, a glass passivation layer 5 is formed after a chip groove 6 on the surface of an N-Si silicon chip 4 is passivated with glass, in a diagram a, after conventional passivation, at an upper edge 7 of the glass passivation layer 5, since glass latex powder is not easy to hang during blade coating and glass slurry is not good, the upper edge 7 of the glass passivation layer is thin and has a poor protection effect on PN junctions, in a diagram b, after UV template treatment, UV glue is arranged on the back of a UV film 1 and can be adhered to the N-Si silicon chip 4, after the blade coating glass latex liquid is dried, UV light (ultraviolet light) is added for irradiation, the UV glue viscosity is rapidly reduced, at this time, the film can be easily taken down, and a thicker bulge is formed at the upper edge 7 of the glass passivation layer 5, which is beneficial to protecting the glass passivation layer 5.
Example 3
The invention discloses a method for realizing passivation of clean glass by using a UV film template, which comprises the following steps:
(1) hollowing out 4 sections of hollow areas 2 on the UV film 1 according to the pattern of the silicon chip groove, forming a UV film connecting area 3 between the end parts of the adjacent hollow areas 2, cutting the UV film 1 into a shape which is consistent with the size of the silicon chip according to the position of the chip pattern on the silicon chip, attaching the UV film 1 on the silicon chip by using a microscope, wherein the hollow areas 2 correspond to the chip groove on the silicon chip;
(2) the glass latex solution is coated on the surface of the UV film 1 in a scraping mode, the glass latex solution enters the chip groove, after the coating is finished, the silicon wafer with the UV film 1 is dried and placed under a UV lamp to irradiate, the UV film 1 can be taken down, and glass in the area except the chip groove can be thoroughly removed.
The hollowing treatment mode is laser hollowing.
The drying process comprises the following steps: the temperature is 80 deg.C, and the time is 3 min.
The illumination power of the UV film 1 is 80mW/cm, and the illumination time is 40 s.
Example 4
The invention discloses a method for realizing passivation of clean glass by using a UV film template, which comprises the following steps:
(1) hollowing out 4 sections of hollow areas 2 on the UV film 1 according to the pattern of the silicon chip groove, forming a UV film connecting area 3 between the end parts of the adjacent hollow areas 2, cutting the UV film 1 into a shape which is consistent with the size of the silicon chip according to the position of the chip pattern on the silicon chip, attaching the UV film 1 on the silicon chip by using a microscope, wherein the hollow areas 2 correspond to the chip groove on the silicon chip;
(2) the glass latex solution is coated on the surface of the UV film 1 in a scraping mode, the glass latex solution enters the chip groove, after the coating is finished, the silicon wafer with the UV film 1 is dried and placed under a UV lamp to irradiate, the UV film 1 can be taken down, and glass in the area except the chip groove can be thoroughly removed.
The hollow-out treatment mode is grinding tool hollow-out.
The drying process comprises the following steps: the temperature is 100 deg.C, and the time is 10 min.
The illumination power of the UV film 1 is 120mW/cm, and the illumination time is 45 s.
Claims (4)
1. A method for realizing passivation of clean glass by using a UV film template comprises a UV film (1), and is characterized in that: a plurality of sections of hollow areas (2) are arranged on the UV film (1), and a UV film connecting area (3) is formed between the end parts of the adjacent hollow areas (2); the shapes formed by all the hollow areas (2) and all the UV film connecting areas (3) correspond to the chip grooves on the silicon chip; the width of the UV film connection area (3) is more than 0mm and less than 0.3 mm; the silicon chip is one of a GPP diode, a triode and a silicon-controlled chip; the UV film connecting area (3) is 2-4;
the method for realizing the passivation of the clean glass by using the UV film template comprises the following steps:
(1) hollowing out a plurality of sections of hollowed-out areas (2) on the UV film (1) according to the pattern of the silicon chip grooves, forming UV film connecting areas (3) between the end parts of adjacent hollowed-out areas (2), cutting the UV film (1) into shapes which are consistent with the size of the silicon chip according to the position of the chip pattern on the silicon chip, attaching the UV film (1) on the silicon chip by using a microscope, wherein the hollowed-out areas (2) correspond to the chip grooves on the silicon chip;
(2) and (2) scraping and coating glass powder latex solution on the surface of the UV film (1), enabling the glass powder latex solution to flow into a chip groove below the hollowed area of the UV film along a scraper, drying the glass powder latex solution after scraping and coating are finished, placing a silicon wafer with the UV film (1) under a UV lamp for irradiation, and taking down the UV film (1), so that glass in the area except the chip groove can be thoroughly removed.
2. The method for realizing the passivation of the clean glass by using the UV film template as claimed in claim 1, wherein: the hollowing treatment mode is one of laser, grinding tool hollowing and screen printing.
3. The method for realizing the passivation of the clean glass by using the UV film template as claimed in claim 1, wherein: the drying process comprises the following steps: the temperature is 80-100 deg.C, and the time is 3-10 min.
4. The method for realizing the passivation of the clean glass by using the UV film template as claimed in claim 1, wherein: the illumination power of the UV film (1) is 80-120mW/cm, and the illumination time is 40-45 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010473422.6A CN111816574B (en) | 2020-05-29 | 2020-05-29 | UV film template and method for realizing passivation of clean glass by using UV film template |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010473422.6A CN111816574B (en) | 2020-05-29 | 2020-05-29 | UV film template and method for realizing passivation of clean glass by using UV film template |
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| Publication Number | Publication Date |
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| CN111816574A CN111816574A (en) | 2020-10-23 |
| CN111816574B true CN111816574B (en) | 2022-03-04 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS6022497B2 (en) * | 1974-10-26 | 1985-06-03 | ソニー株式会社 | semiconductor equipment |
| EP0818820A1 (en) * | 1996-07-11 | 1998-01-14 | Zowie Technology Corp. | Full open P-N junction glass passivated silicon semiconductor diode chip and preparation method thereof |
| DE102006033319B4 (en) * | 2006-07-17 | 2010-09-30 | Infineon Technologies Ag | Method for producing a semiconductor device in semiconductor chip size with a semiconductor chip |
| CN101459059A (en) * | 2007-12-11 | 2009-06-17 | 林楠 | Glass passivating technique process for semi-conductor device with silicon large diameter round wafer |
| US8152048B2 (en) * | 2008-12-09 | 2012-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and structure for adapting solder column to warped substrate |
| TW201412758A (en) * | 2012-07-19 | 2014-04-01 | Hitachi Chemical Co Ltd | Composition for forming passivation layer, semiconductor substrate with passivation layer, method for producing semiconductor substrate with passivation layer, photovoltaic cell element, method for producing photovoltaic cell element |
| CN105390385A (en) * | 2015-11-03 | 2016-03-09 | 常州星海电子有限公司 | High-surge glass passivation chip |
| CN106711091B (en) * | 2017-01-20 | 2019-07-02 | 中国科学院微电子研究所 | MEMS wafer cutting method and MEMS chip manufacturing method |
| CN108364868A (en) * | 2017-12-29 | 2018-08-03 | 济南兰星电子有限公司 | The method for reducing semiconductor devices reverse leakage current |
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