CN111758300A - Display device and method for manufacturing the same - Google Patents
Display device and method for manufacturing the same Download PDFInfo
- Publication number
- CN111758300A CN111758300A CN201880090139.6A CN201880090139A CN111758300A CN 111758300 A CN111758300 A CN 111758300A CN 201880090139 A CN201880090139 A CN 201880090139A CN 111758300 A CN111758300 A CN 111758300A
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- film
- inorganic film
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- display device
- inorganic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- G—PHYSICS
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- G—PHYSICS
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
In a sealing film (30a), a first inorganic film (26a) is provided so as to cover a light-emitting element (25), a third inorganic film (27a) is provided between the first inorganic film (25) and an organic film (28a), a peripheral end portion of the third inorganic film (27a) is positioned on a display region side from the peripheral end portion of the first inorganic film (26a) and on an opposite side from a display region D from the peripheral end portion of the light-emitting element (25), wettability with respect to droplets to become the organic film (28a) is higher than that of the first inorganic film (26a), the organic film (28a) is provided on the first inorganic film (26a) so as to cover the third inorganic film (27a), and the second inorganic film (27a) is provided so as to cover the peripheral end portion of the first inorganic film (26a) and the organic film (28 a).
Description
Technical area
The invention relates to a display device and a manufacturing method thereof.
Background
In recent years, as a display device replacing a liquid crystal display device, a self-light-emitting organic EL display device using an organic EL (electroluminescence) element has attracted attention. In order to prevent deterioration of the organic EL element due to contamination of moisture, oxygen, or the like, a sealing structure in which a sealing film covering the organic EL element is formed of a laminate of an inorganic film and an organic film has been proposed in the organic EL display device.
For example, patent document 1 discloses a display device including: and a thin-film sealing layer having a laminated structure in which inorganic film layers formed by a cvd (chemical vapor deposition) method or the like and organic film layers formed by an inkjet method or the like are alternately arranged, and covering the organic light-emitting element.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2014-86415
Disclosure of Invention
Technical problem to be solved by the invention
However, in the case where the organic film constituting the sealing film is formed by an ink-jet method as in the display device disclosed in patent document 1, since droplets of the organic resin material which becomes the organic film easily spread to the surroundings, it is difficult to form the peripheral end portion of the organic film with high accuracy.
The present invention has been made in view of the above problems, and an object thereof is to form a peripheral end portion of an organic film constituting a sealing film with high accuracy.
Means for solving the problems
In order to achieve the above object, a display device according to the present invention includes: a base substrate defining a display region for displaying an image and defining a frame region around the display region; a light emitting element provided in the display region of the substrate; and a sealing film which is provided in the display region and the frame region, covers the light-emitting element, and in which a first inorganic film, an organic film, and a second inorganic film are sequentially stacked, wherein the first inorganic film is provided so as to cover the light-emitting element, a third inorganic film is provided between the first inorganic film and the organic film, a peripheral end portion of the third inorganic film is positioned on the display region side with respect to the peripheral end portion of the first inorganic film and on the opposite side with respect to the display region with respect to the peripheral end portion of the light-emitting element, and wettability with respect to droplets which become the organic film is higher than that of the first inorganic film,
the organic film is provided on the first inorganic film and covers the third inorganic film, and the second inorganic film is provided so as to cover a peripheral end portion of the first inorganic film and the organic film.
Effects of the invention
According to the present invention, since the third inorganic film is provided between the first inorganic film and the organic film, the peripheral end portion of the third inorganic film is positioned on the display region side of the peripheral end portion of the first inorganic film and on the opposite side of the display region from the peripheral end portion of the light-emitting element, and the wettability with respect to the liquid droplets is higher than that of the first inorganic film, the peripheral end portion of the organic film constituting the sealing film can be formed with high accuracy.
Drawings
Fig. 1 is a plan view showing a schematic configuration of an organic EL display device according to a first embodiment of the present invention.
Fig. 2 is a plan view of a display region of an organic EL display device according to a first embodiment of the present invention.
Fig. 3 is an equivalent circuit diagram showing a TFT layer constituting an organic EL display device according to a first embodiment of the present invention.
Fig. 4 is a sectional view of the organic EL display device taken along line IV-IV in fig. 1.
Fig. 5 is a cross-sectional view showing an organic EL layer constituting an organic EL display device according to a first embodiment of the present invention.
Fig. 6 is an explanatory diagram showing wettability of droplets to be an organic film of a sealing film constituting an organic EL display device according to a first embodiment of the present invention.
Fig. 7 is a plan view showing a schematic configuration of an organic EL display device according to a second embodiment of the present invention.
Fig. 8 is a sectional view of the organic EL display device taken along line VIII-VIII in fig. 7.
Fig. 9 is a cross-sectional view of a modification of the organic EL display device according to the second embodiment of the present invention.
Fig. 10 is a plan view of a schematic configuration of an organic EL display device according to a third embodiment of the present invention.
Fig. 11 is a sectional view of the organic EL display device taken along line XI-XI in fig. 10.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition to this, the present invention is,
the present invention is not limited to the following embodiments.
First embodiment
Fig. 1 to 6 show a display device and a method of manufacturing the display device according to a first embodiment of the present invention. In the following embodiments, an organic EL display device including an organic EL element is exemplified as a display device including a light-emitting element. Here, fig. 1 is a plan view showing a schematic configuration of an organic EL display device 50a according to the present embodiment. Fig. 2 is a plan view of the display region D of the organic EL display device 50 a. Fig. 3 is an equivalent circuit diagram showing the TFT layer 20a constituting the organic EL display device 50 a. In addition, fig. 4 is a sectional view of the organic EL display device 50a taken along the line IV-IV in fig. 1. Fig. 5 is a cross-sectional view showing the organic EL layer 23 constituting the organic EL display device 50 a. Fig. 6 is an explanatory diagram showing wettability of the droplets L to be the organic film 28a constituting the sealing film 30a of the organic EL display device 50 a.
As shown in fig. 1, for example, the organic EL display device 50a includes: a display region D which is defined in a rectangular shape and displays an image, and a frame region F which is defined around the display region D. Here, in the display region D of the organic EL display device 50a, as shown in fig. 2, a plurality of sub-pixels P are arranged in a matrix. As shown in fig. 2, the display region D of the organic EL display device 50a includes a sub-pixel P including a red light-emitting region Lr for performing red gradation display, a sub-pixel P including a green light-emitting region Lg for performing green gradation display, and a sub-pixel P including a blue light-emitting region Lb for performing blue gradation display, which are disposed adjacent to each other. In addition, in the display region D of the organic EL display device 50a, one pixel is configured by three adjacent sub-pixels P including a red light-emitting region Lr, a green light-emitting region Lg, and a blue light-emitting region Lb. In addition, in the frame region F, as shown in fig. 1, the terminal region T is provided along the right side in the drawing of the display region D. In addition, between the display region D and the terminal region T in the frame region F, as shown in fig. 1, a plurality of lead wirings R are provided so as to extend in parallel to each other in the lateral direction in the drawing. In the present embodiment, the rectangular display region D is illustrated, but the display region D may have another shape such as a circular shape.
As shown in fig. 4, the organic EL display device 50a includes: a resin substrate layer 10 provided as a base substrate, a TFT (thin film transistor) layer 20a provided on the resin substrate layer 10, an organic EL element 25 provided as a light emitting element on the TFT layer 20a, and a sealing film 30a provided to cover the organic EL element 25.
The resin substrate layer 10 is made of, for example, polyimide resin.
As shown in fig. 4, the TFT layer 20a includes: the undercoat film 11 provided on the resin substrate layer 10, the plurality of first TFTs 9a, the plurality of second TFTs 9b, and the plurality of capacitors 9c provided on the undercoat film 11, and the planarization film 19a provided on each of the first TFTs 9a, each of the second TFTs 9b, and each of the capacitors 9 c. Here, in the TFT layer 20a, as shown in fig. 2 and 3, a plurality of gate lines 14 are provided so as to extend parallel to each other in the lateral direction in the drawing. In addition, in the TFT layer 20a, as shown in fig. 2 and 3, a plurality of source lines 18f are provided so as to extend in parallel to each other in the longitudinal direction in the drawing. In addition, in the TFT layer 20a, as shown in fig. 2 and 3, a plurality of power supply lines 18g are provided adjacent to the respective source lines 18f and extend in parallel to each other in the longitudinal direction in the drawing. In addition, in the TFT layer 20a, as shown in fig. 3, in each sub-pixel P, a first TFT9a, a second TFT9b, and a capacitor 9c are provided, respectively.
The undercoat film 11 is formed of a single-layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.
As shown in fig. 3, in each sub-pixel P, the first TFT9a is connected to the corresponding gate line 14 and source line 18 f. Here, as shown in fig. 4, the first TFT9a includes: the semiconductor layer 12a is provided in an island shape on the undercoat film 11, the gate insulating film 13 is provided so as to cover the semiconductor layer 12a, the gate electrode 14a is provided so as to overlap a channel region (not shown) of the semiconductor layer 12a on the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 are provided in this order so as to cover the gate electrode 14a, and the source electrode 18a and the drain electrode 18b are provided on the second interlayer insulating film 17 and are arranged so as to be separated from each other. The source electrode 18a and the drain electrode 18b are connected to a source region (not shown) and a drain region (not shown) of the semiconductor layer 12a, respectively, via contact holes formed in a laminated film of the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. The gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are formed of a single-layer film or a stacked-layer film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.
As shown in fig. 3, in each sub-pixel P, the second TFT9b is connected to the corresponding first TFT9a and power supply line 18 g. Here, as shown in fig. 4, the second TFT9b includes: the semiconductor layer 12b is provided in an island shape on the undercoat film 11, the gate insulating film 13 is provided so as to cover the semiconductor layer 12b, the gate electrode 14b is provided so as to overlap a channel region (not shown) of the semiconductor layer 12b on the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided so as to cover the gate electrode 14b, and the source electrode 18c and the drain electrode 18d are provided on the second interlayer insulating film 17 and are arranged so as to be separated from each other. The source electrode 18c and the drain electrode 18d are connected to a source region (not shown) and a drain region (not shown) of the semiconductor layer 12b, respectively, via contact holes formed in a laminated film of the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. In addition, although the first TFT9a and the second TFT9b are illustrated as top gate TFTs in this embodiment, the first TFT9a and the second TFT9b may be bottom gate TFTs.
As shown in fig. 3, in each sub-pixel P, the capacitor 9c is connected to the corresponding first TFT9a and power supply line 18 g. Here, as shown in fig. 4, the capacitor 9c includes: a lower conductive layer 14c formed of the same material as the gate electrode 14a and the gate electrode 14b in the same layer, a first interlayer insulating film 15 provided so as to cover the lower conductive layer 14c, and an upper conductive layer 16 provided so as to overlap with the lower conductive layer 14c on the first interlayer insulating film 15. As shown in fig. 4, the upper conductive layer 16 is connected to a power supply line 18g via a contact hole formed in the second interlayer insulating film 17.
The planarization film 19a is made of a colorless and transparent organic resin material such as polyimide resin, for example. Here, in the planarizing film 19a, as shown in fig. 1 and 4, in the frame region F, a frame-like slit S is provided so as to surround the display region D.
As shown in fig. 4, the organic EL element 25 includes a plurality of first electrodes 21, an edge cover 22, a plurality of organic EL layers 23, and a second electrode 24, which are provided in this order on the resin substrate layer 10 via the TFT layer 20a in the display region D, and on the planarization film 19 a.
As shown in fig. 4, the plurality of first electrodes 21 are provided on the planarization film 19a in a matrix as anodes so as to correspond to the plurality of sub-pixels P. Here, as shown in fig. 4, the first electrode 21 is connected to the drain electrode 18d of each second TFT9b through a contact hole formed in the planarization film 19 a. The first electrode 21 has a function of injecting holes (holes) into the organic EL layer 23. In addition, the first electrode 21 is preferably formed of a material having a large work function in order to improve the efficiency of hole injection into the organic EL layer 23. Here, examples of the material constituting the first electrode 21 include metal materials such as silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), yttrium (Y), manganese (Mn), and indium (In). The material constituting the first electrode 21 may be, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), Indium Tin Oxide (ITO), or Indium Zinc Oxide (IZO). The first electrode 21 may be formed by stacking a plurality of layers made of the above-described material. Examples of the material having a large work function include Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and the like. The first electrode 21 may be a laminated film of the metal film and the oxide film.
As shown in fig. 4, the edge cover 22 is provided in a grid pattern so as to cover the peripheral edge of each first electrode 21. Here, examples of the material constituting the edge cover 22 include organic films of polyimide resin, acrylic resin, silicone resin, novolac resin, and the like. As shown in fig. 4, the edge cover 22 is formed in a convex shape, so that the surface of the organic EL element 25 is formed in a concave-convex shape. In the present embodiment, the edge cover 22 including the convex portions on the surface is exemplified, but the edge cover 22 may not include the convex portions on the surface. The edge cover 22 disposed in the frame region is provided to suppress excessive wetting and spreading of the droplets L of the sealing film 30a, which will be described later, to become the organic film 28a by the uneven shape thereof, and to make the thickness of the organic film 28a uniform and to flatten the surface thereof.
As shown in fig. 4, the plurality of organic EL layers 23 are disposed on the respective first electrodes 21 and arranged in a matrix so as to correspond to the plurality of sub-pixels. As shown in fig. 5, each organic EL layer 23 includes a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer 5, which are provided in this order on the first electrode 21.
The hole injection layer 1 is also referred to as an anode buffer layer, and has a function of improving the efficiency of injecting holes from the first electrode 21 into the organic EL layer 23 by approaching the energy levels of the first electrode 21 and the organic EL layer 23. Examples of the material constituting the hole injection layer 1 include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives.
The hole transport layer 2 has a function of improving the efficiency of transporting holes from the first electrode 21 to the organic EL layer 23. Examples of the material constituting the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, polyparaphenylene vinylene (poly-p-phenylenevinylene), polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon carbon, zinc sulfide, and zinc selenide.
The light emitting layer 3 is a region where holes and electrons are injected from the first electrode 21 and the second electrode 24, respectively, and the holes and the electrons are recombined when a voltage is applied through the first electrode 21 and the 2 nd electrode 24. Here, the light-emitting layer 3 is formed of a material having high light-emitting efficiency. Further, as a material constituting the light emitting layer 3, examples thereof include metal hydroxyquinolinone (オキシノイド, oxinoid) compounds (8-hydroxyquinoline metal complexes), naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinyl acetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, bisstyrylbenzene derivatives, triphenylvinylbenzene derivatives, perylene derivatives, perinone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, acridine derivatives, phenoxazinone derivatives, quinacridone derivatives, rubrene, polyparaphenylene vinylene (poly-p-phenylene vinylene), polysilanes and the like.
The electron transport layer 4 has a function of efficiently transporting electrons to the light emitting layer 3. Here, as the material constituting the electron transport layer 4, for example, as the organic compound, oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinone dimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silole derivatives, and metal hydroxyquinolinone (オキシノイド, oxinoid) compounds are given.
The electron injection layer 5 has a function of increasing efficiency of injecting electrons from the second electrode 24 into the organic EL layer 23 by approaching energy levels of the second electrode 24 and the organic EL layer 23, and the driving voltage of the organic EL element 25 can be reduced by this function. In addition, the electron injection layer 5 is also referred to as a cathode buffer layer. Examples of the material constituting the electron injection layer 5 include inorganic basic compounds such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), and barium fluoride (BaF2), aluminum oxide (Al2O3), and strontium oxide (SrO).
As shown in fig. 4, the second electrode 24 is provided as a cathode (common electrode) so as to cover the organic EL layers 23 and the edge cover 22. The second electrode 24 has a function of injecting electrons into the organic EL layer 23. The second electrode 24 is preferably made of a material having a large work function in order to improve the efficiency of electron injection into the organic EL layer 23. As shown in fig. 4, the second electrode 24 is connected to a source conductive layer (wiring layer) 18h formed of the same material as the source electrode 18a and the source electrode 18c in the same layer through a slit S formed in the planarization film 19 a. Examples of the material constituting the second electrode 24 include silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), and lithium fluoride (LiF). The second electrode 24 may be formed of an alloy such as magnesium (Mg)/copper (Cu), magnesium (Mg)/silver (Ag), sodium (Na)/potassium (K), astatine (At)/astatine oxide (AtO2), lithium (Li)/aluminum (Al), lithium (Li)/calcium (Ca)/aluminum (Al), and lithium fluoride (LiF)/calcium (Ca)/aluminum (Al). The second electrode 24 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), Indium Tin Oxide (ITO), or Indium Zinc Oxide (IZO). The second electrode 24 may be formed by laminating a plurality of layers made of the above-described materials. Examples of the material having a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg)/copper (Cu), magnesium (Mg)/silver (Ag), sodium (Na)/potassium (K), lithium (Li)/aluminum (Al), lithium (Li)/calcium (Ca)/aluminum (Al), and lithium fluoride (LiF)/calcium (Ca)/aluminum (Al).
As shown in fig. 4, the sealing film 30a is provided in the display region D and the frame region F so as to cover the organic EL element 25, and has a function of protecting the organic EL layer 23 of the organic EL element 25 from moisture and oxygen. Further, as shown in fig. 4, the sealing film 30a includes: a first inorganic film 26a provided so as to cover (the uppermost second electrode 24 of) the organic EL element 25, a third inorganic film 27a provided on the first inorganic film 26a, an organic film 28a provided on the third inorganic film 27a, and a second inorganic film 29a provided on the organic film 28 a.
The first inorganic film 26a is formed of an inorganic insulating film such as a silicon nitride film. Here, the surface of the first inorganic film 26a has relatively low wettability (for example, a contact angle θ of 30 degrees or more) with respect to the liquid droplet L of the organic resin material to be the organic film 28 a. The contact angle θ, which is an index indicating wettability, is based on JISR 3257: 1999, the contact angle θ in the present embodiment was measured by using a CVD vapor deposited substrate C (see fig. 6) instead of a glass substrate and using an ink material instead of water.
The third inorganic mold 27a is formed of an inorganic insulating mold such as a silicon oxide film. Here, the surface of the third inorganic film 27a has relatively high wettability (for example, a contact angle θ of less than 30 degrees) with respect to the liquid droplet L of the organic resin material to be the organic film 28a, and the wettability with respect to the liquid droplet L is higher than that of the first inorganic film 26 a. Further, the difference between the contact angle θ of the surface of the first inorganic film 26a and the contact angle θ of the surface of the third inorganic film 27a is preferably large. As shown in fig. 1 and 4, the third inorganic film 27a is provided between the first inorganic film 26a and the organic film 28a, and the peripheral end portion of the third inorganic film 27a is located more inward (on the side of the display region D, left side in fig. 4) than the peripheral end portion of the first inorganic film 26a and more outward (on the opposite side of the display region D, right side in fig. 4) than the peripheral end portion of the uppermost second electrode 24 of the organic EL element 25. As shown in fig. 1 and 4, the peripheral end of the third inorganic film 27a is located further outside (opposite to the display region D) than the slit S.
The organic film 28a is made of an organic resin material such as acrylate, epoxy, silicon, polyurea, Parylene, polyimide, and polyamide. Here, as shown in fig. 4, the organic film 28a is disposed to cover the third inorganic film 27a on the first inorganic film 26 a. As shown in fig. 4, the peripheral end of the organic film 28a is located inward (toward the display region D, and to the left in fig. 4) of the peripheral end of the first inorganic film 26 a.
The second inorganic film 29a is formed of an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film. Here, as shown in fig. 4, the second inorganic film 29a is provided to cover the peripheral end portion of the first inorganic film 26a and the organic film 28 a.
In the organic EL display device 50a, in each sub-pixel P, the first TFT9a is turned on by inputting a gate signal to the first TFT9a through the gate line 14, and a predetermined voltage corresponding to the source signal is written to the gate electrode 14b and the capacitor 9c of the second TFT9b through the source line 18f, so that the magnitude of the current from the power supply line 18g is determined based on the gate voltage of the second TFT9b, and the predetermined current is supplied to the organic EL layer 23, whereby the light-emitting layer 3 of the organic EL layer 23 emits light and an image is displayed. Further, in the organic EL display device 50a, even if the first TFT9a becomes the on state, the gate voltage of the second TFT9b is held by the capacitor 9c, and thus light emission by the light-emitting layer 3 is maintained until the gate signal of the next frame is input.
Next, a method for manufacturing the organic EL display device 50a according to the present embodiment will be described. The method for manufacturing the organic EL display device 50a according to the present embodiment includes: a TFT layer forming step, an organic EL element forming step (light-emitting element forming step), and a sealing film forming step including a first inorganic film forming step, a third inorganic film forming step, an organic film forming step, and a second inorganic film forming step.
< TFT layer Forming Process >
For example, the undercoat film 11, the first TFT9a, the second TFT9b, the capacitor 9c, and the planarization film 19a are formed on the surface of the resin substrate layer 10 formed on the glass substrate using a well-known method, thereby forming the TFT layer 20 a.
< organic EL element Forming Process >
The first electrode 21, the edge cover 22, the organic EL layer 23 (the hole injection layer 1, the hole transport layer 2, the light-emitting layer 3, the electron transport layer 4, and the electron injection layer 5), and the second electrode 24 are formed on the TFT layer 20a formed in the TFT layer forming step by a known method, thereby forming the organic EL element 25.
< Process for Forming sealing film >
First, on the surface of the substrate on which the organic EL element 25 is formed in the organic EL element forming step, an inorganic insulating film such as a silicon nitride film is formed to a thickness of about 1000nm by a plasma CVD method using a mask, for example, to form a first inorganic film 26a (first inorganic film forming step).
Next, on the substrate surface on which the first inorganic film 26a is formed, an inorganic insulating film such as a silicon oxide film is formed to a thickness of about 100nm by, for example, a plasma CVD method using a mask plate, thereby forming a third inorganic film 27a (third inorganic film forming step).
Then, an ultraviolet-curable organic resin material such as acrylate is applied to the substrate surface on which the third inorganic film 27a is formed to a thickness of about 10 μm by, for example, an ink jet method, and leveled, and then irradiated with ultraviolet light to be cured, thereby forming an organic film 28a (organic film forming step). Here, due to the difference in wettability of the droplets L with respect to the first inorganic film 26a and the third inorganic film 27a, the droplets L are likely to wet and spread on the surface of the third inorganic film 27a and are less likely to wet and spread on the surface of the first inorganic film 26a, and therefore the wetting and spreading of the droplets L are likely to stop on the surface of the first inorganic film 26a exposed from the third inorganic film 27 a. Thus, as shown in fig. 4, the peripheral end portion of the organic film 28a is located more inward (toward the display region D, left side in the figure) than the peripheral end portion of the first inorganic film 26 a.
Further, since the second inorganic film 29a is formed by forming an inorganic insulating film such as a silicon nitride film, a silicon oxide film, and a silicon oxynitride film to a thickness of about 1000nm by a plasma CVD method using a mask plate for the substrate on which the organic film 28a is formed, the sealing film 30a in which the first inorganic film 26a, the third inorganic film 27a, the organic film 28a, and the second inorganic film 29a are sequentially stacked is formed (second inorganic film forming step).
Finally, the glass substrate is peeled from the lower surface of the resin substrate layer 10 by irradiating laser light from the lower surface (glass substrate) side of the substrate on which the sealing film 30a is formed.
As described above, the organic EL display device 50a of the present embodiment can be manufactured.
As described above, according to the organic EL display device 50a and the method of manufacturing the same of the present embodiment, in the third inorganic film forming step, the third inorganic film 27a is formed, the peripheral end portion of the third inorganic film 27a is located more inward than the peripheral end portion of the first inorganic film 26a and more outward than the peripheral end portion of the organic EL element 25 on the first inorganic film 26a formed in the first inorganic film forming step, and the wettability with respect to the droplet L to be the organic film 28a is higher than that of the first inorganic film 26 a. Therefore, in the subsequent organic film formation step, when the organic film 28a is formed by applying the ink jet method on the first inorganic film 26a so as to cover the third inorganic film 27a, the droplets L to become the organic film 28a are likely to be wet-spread on the surface of the third inorganic film 27a, and are less likely to be wet-spread on the surface of the first inorganic film 26 a. This makes it easy for the wetting and spreading of the droplets L to stop on the surface of the first inorganic film 26a exposed from the third inorganic film 27a, and therefore, the peripheral end portion of the organic film 28a constituting the sealing film 30a can be formed with high accuracy. Further, in a state where the peripheral end portion of the organic film 28a is located more inward than the peripheral end portion of the first inorganic film 26a and more outward than the peripheral end portion of the third inorganic film 27a, in the second inorganic film forming step, the second inorganic film 29a is formed so as to cover the peripheral end portion of the first inorganic film 26a and the organic film 28a, whereby the sealing film 30a which secures the sealing function can be formed. Here, since the frame region F on which the peripheral end portion of the sealing film 30a is disposed does not need a bank structure for the bank liquid droplets L, the width of the frame region F can be made narrow.
In addition, according to the organic EL display device 50a and the method of manufacturing the same of the present embodiment, since the surface of the organic EL element 25 is formed in the concave-convex shape by the edge cover 22, the wetting and spreading of the liquid droplets L in the display region D can be suppressed.
Second embodiment
Fig. 7 to 9 show a second embodiment of a display device and a method for manufacturing the same according to the present invention. Here, fig. 7 is a plan view showing a schematic configuration of an organic EL display device 50b according to the present embodiment. Fig. 8 is a cross-sectional view of the organic EL display device 50b taken along line VIII-VIII in fig. 7. Fig. 9 is a cross-sectional view of an organic EL display device 50ba according to a modification of the organic EL display device 50 b. In the following embodiments, the same components as those in fig. 1 to 6 are denoted by the same reference numerals, and the description thereof is omitted.
In the first embodiment, the organic EL display device 50a in which the bank structure for the bank liquid droplet L is not provided is exemplified, but in the present embodiment, the organic EL display device 50b in which the bank groove G is provided in the frame region F as the bank structure is exemplified.
As shown in fig. 7, the organic EL display device 50b includes: a display region D defined in a rectangular shape and displaying an image, and a frame region F defined around the display region D.
As shown in fig. 8, the organic EL display device 50b includes: a resin substrate layer 10 provided as a base substrate, a TFT layer 20b provided on the resin substrate layer 10, an organic EL element 25 provided as a light emitting element on the TFT layer 20b, and a sealing film 30b provided to cover the organic EL element 25.
As shown in fig. 8, the TFT layer 20b includes: the undercoat film 11 provided on the resin substrate layer 10, the plurality of first TFTs 9a, the plurality of second TFTs 9b, and the plurality of capacitors 9c provided on the undercoat film 11, and the planarization film 19b provided on each of the first TFTs 9a, each of the 2 nd TFTs 9b, and each of the capacitors 9 c. Here, in the TFT layer 20b, the plurality of gate lines 14 are provided so as to extend in parallel to each other, as in the TFT20 layer a of the first embodiment. In the TFT layer 20b, similarly to the TFT layer 20a of the first embodiment, the source lines 18f are provided so as to extend in parallel with each other in a direction perpendicular to the gate lines 14. In the TFT layer 20b, similarly to the TFT layer 20a of the first embodiment, a plurality of power supply lines 18g are provided adjacent to the source lines 18f and extend parallel to each other. In the TFT layer 20b, the first TFT layer 9a, the second TFT layer 9b, and the capacitor 9c are provided in each sub-pixel P, similarly to the TFT20a of the first embodiment.
The planarization film 19b is made of a colorless and transparent organic resin material such as polyimide resin. As shown in fig. 7 and 8, in the planarizing film 19b, in the frame region F, a substantially U-shaped slit S and a frame-shaped bank groove G having no gap are provided in this order from the display region D side so as to surround the display region D.
As shown in fig. 8, the sealing film 30b is provided in the display region D and the frame region F so as to cover the organic EL element 25, and has a function of protecting the organic EL layer 23 of the organic EL element 25 from moisture and oxygen. As shown in fig. 8, the sealing film 30b includes: a first inorganic film 26b provided so as to cover (the uppermost second electrode 24 of) the organic EL element 25, a third inorganic film 27b provided on the first inorganic film 26b, an organic film 28b provided on the third inorganic film 27b, and a second inorganic film 29b provided on the organic film 28 b.
The first inorganic film 26b is formed of an inorganic insulating film such as a silicon nitride film. Here, the surface of the first inorganic film 26b has relatively low wettability (for example, the contact angle θ is 30 degrees or more) with respect to the liquid droplets L of the organic resin material to be the organic film 28 b. As shown in fig. 8, the first inorganic film 26b is also provided on the inner surface of the bank groove G formed in the planarizing film 19 b.
The third inorganic film 27b is formed of an inorganic insulating film such as a silicon oxide film. Here, the surface of the third inorganic film 27b has relatively high wettability (for example, a contact angle θ of less than 30 degrees) with respect to the liquid droplet L of the organic resin material to be the organic film 28b, and the wettability with respect to the liquid droplet L is higher than that of the first inorganic film 26 b. Further, the difference between the contact angle θ of the surface of the first inorganic film 26b and the contact angle θ of the surface of the third inorganic film 27b is preferably large. As shown in fig. 8, the third inorganic film 27b is provided between the first inorganic film 26b and the organic film 28b, and the peripheral end portion of the third inorganic film 27b is located more inward (the display region D side, left side in the figure) than the peripheral end portion of the first inorganic film 26b and more outward (the opposite side to the display region D, right side in the figure) than the peripheral end portion of the uppermost second electrode 24 of the organic EL element 25.
In the present embodiment, the structure in which the third inorganic film 27b is provided on the sealing film 30b at the bottom of the weir crest G is exemplified, but the structure of the sealing film 30ba as shown in fig. 9 may be adopted. Here, in the organic EL display device 50ba having the structure including the sealing film 30ba, as shown in fig. 9, the third inorganic film 27ba corresponding to the third inorganic film 27b is provided to the edge of the weir dam groove G on the display region D side, and the organic film 28ba corresponding to the organic film 28b and the second inorganic film 29ba corresponding to the second inorganic film 29b are sequentially stacked on the third inorganic film 27 ba.
The organic film 28b is made of an organic resin material such as acrylate, epoxy, silicon, polyurea, Parylene (registered trademark, manufactured by Parylene contract corporation, japan), polyimide, or polyamide. Here, as shown in fig. 8, the organic film 28b is disposed to cover the third inorganic film 27b on the first inorganic film 26 b. As shown in fig. 8, the peripheral end of the organic film 28b enters the inside of the bank groove G and is positioned further inward (toward the display region D, left side in the figure) than the peripheral end of the first inorganic film 26 b.
The second inorganic film 29b is formed of an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film. Here, as shown in fig. 8, the second inorganic film 29b is provided so as to cover the peripheral end portion of the first inorganic film 26b and the organic film 28 b.
The organic EL display device 50b is configured to be flexible as in the organic EL display device 50a of the first embodiment, and in each sub-pixel P, the light-emitting layer 3 of the organic EL layer 23 is appropriately caused to emit light through the first TFT9a and the second TFT9b, thereby displaying an image.
The organic EL display device 50b according to the present embodiment can be manufactured by changing the pattern shape of the planarization film 19a in the method for manufacturing the organic EL display device 50a described in the first embodiment.
As described above, according to the organic EL display device 50b and the method of manufacturing the same of the present embodiment, in the third inorganic film forming step, the third inorganic film 27b is formed, the peripheral end portion of the third inorganic film 27b is located more inward than the peripheral end portion of the first inorganic film 26b and more outward than the peripheral end portion of the organic EL element 25 on the first inorganic film 26b formed in the first inorganic film forming step, and the wettability with respect to the droplet L to be the organic film 28b is higher than that of the first inorganic film 26 b. Therefore, in the subsequent organic film formation step, when the organic film 28b is formed by applying the ink jet method on the first inorganic film 26b so as to cover the third inorganic film 27b, the droplets L to become the organic film 28b are likely to be wet-spread on the surface of the third inorganic film 27b, and are less likely to be wet-spread on the surface of the first inorganic film 26 b. This makes it easy for the wetting and spreading of the droplets L to stop on the surface of the first inorganic film 26b exposed from the third inorganic film 27b, and therefore, the peripheral end portion of the organic film 28b constituting the sealing film 30b can be formed with high accuracy. Further, in a state where the peripheral end portion of the organic film 28b is located more inward than the peripheral end portion of the first inorganic film 26b and more outward than the peripheral end portion of the third inorganic film 27b, the second inorganic film 29b is formed so as to cover the peripheral end portion of the first inorganic film 26b and the organic film 28b in the second inorganic film forming step, and therefore, the sealing film 30b that ensures the sealing function can be formed.
In addition, according to the organic EL display device 50b and the method of manufacturing the same of the present embodiment, since the surface of the organic EL element 25 is formed in the concave-convex shape by the edge cover 22, the wetting and spreading of the liquid droplets L in the display region D can be suppressed.
In addition, according to the organic EL display device 50b and the method of manufacturing the same of the present embodiment, since the bank groove G is provided to surround the display region D in the frame region F and the first inorganic film 26b is also provided on the inner surface of the bank groove G, the liquid droplets L to be the inorganic films 28b enter the interior of the bank groove G in the organic film forming step, and the liquid droplets L can be surely bank.
Third embodiment
Fig. 10 and 11 show a display device and a method of manufacturing the same according to a third embodiment of the present invention. Here, fig. 10 is a plan view showing a schematic configuration of an organic EL display device 50c according to the present embodiment. Fig. 11 is a cross-sectional view of the organic EL display device 50c taken along the line XI-XI in fig. 10.
In the second embodiment, the organic EL display device 50b in which the bank groove G is provided in the frame region F as the bank structure is exemplified, but in the present embodiment, the organic EL display device 50c in which the bank groove G and the bank wall W are provided in the frame region F as the bank structure is exemplified.
As shown in fig. 10, the organic EL display device 50c includes: a display region D defined in a rectangular shape and displaying an image, and a frame region F defined around the display region D.
As shown in fig. 11, the organic EL display device 50c includes: a resin substrate layer 10 provided as a base substrate, a TFT layer 20b provided on the resin substrate layer 10, an organic EL element 25 provided as a light emitting element on the TFT layer 20b, and a sealing film 30c provided to cover the organic EL element 25.
In the frame region F of the organic EL display device 50c, as shown in fig. 10 and 11, a frame-shaped bank wall W is provided so as to surround the bank groove G formed in the planarization film 19b on the outer side (display region D side). Here, the weir dam wall W is formed of the same material as the edge cover 22 in the same layer.
As shown in fig. 11, the sealing film 30c is provided so as to cover the organic EL element 25 in the display region D and the frame region F, and has a function of protecting the organic EL layer 23 of the organic EL element 25 from moisture and oxygen. Further, as shown in fig. 11, the sealing film 30c includes: a first inorganic film 26c provided so as to cover (the uppermost second electrode 24 of) the organic EL element 25, a third inorganic film 27c provided on the first inorganic film 26c, an organic film 28c provided on the third inorganic film 27c, and a second inorganic film 29c provided on the organic film 28 c.
The first inorganic film 26c is formed of an inorganic insulating film such as a silicon nitride film. Here, the surface of the first inorganic film 26c has relatively low wettability (for example, the contact angle θ is 30 degrees or more) with respect to the liquid droplets L of the organic resin material to be the organic film 28 b. As shown in fig. 11, the first inorganic film 26c is also provided on the inner surface of the bank groove G and the surface of the bank wall W formed on the planarization film 19 b.
The third inorganic film 27c is formed of an inorganic insulating film such as a silicon oxide film. Here, the surface of the third inorganic film 27c has relatively high wettability (for example, a contact angle θ of less than 30 degrees) with respect to the liquid droplet L of the organic resin material to be the organic film 28c, and the wettability with respect to the liquid droplet L is higher than that of the first inorganic film 26 c. Further, the difference between the contact angle θ of the surface of the first inorganic film 26c and the contact angle θ of the surface of the third inorganic film 27c is preferably large. As shown in fig. 11, the third inorganic film 27c is provided between the first inorganic film 26c and the organic film 28c, and the peripheral end portion of the third inorganic film 27c is located more inward (the display region D side, left side in the figure) than the peripheral end portion of the first inorganic film 26c and more outward (the opposite side to the display region D, right side in the figure) than the peripheral end portion of the uppermost second electrode 24 of the organic EL element 25.
The organic film 28c is made of an organic resin material such as acrylate, epoxy, silicon, polyurea, Parylene (registered trademark, manufactured by Parylene contract corporation of japan), polyimide, or polyamide. Here, as shown in fig. 11, the organic film 28c is provided so as to cover the third inorganic film 27c on the first inorganic film 26 c. As shown in fig. 11, the peripheral end of the organic film 28c enters the inside of the bank groove G, contacts the side surface of the bank wall W on the display region D side via the first inorganic film 26c, and is located inward (on the display region D side, on the left side in the figure) of the peripheral end of the first inorganic film 26 c.
The second inorganic film 29c is formed of an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film. Here, as shown in fig. 11, the second inorganic film 29c is provided so as to cover the peripheral end portion of the first inorganic film 26c and the organic film 28 c.
The organic EL display device 50c is configured to be flexible as in the organic EL display device 50a of the first embodiment, and each sub-pixel P is configured to display an image by appropriately emitting light from the light-emitting layer 3 of the organic EL layer 23 through the first TFT9a and the second TFT9 b.
The organic EL display device 50c of the present embodiment can be manufactured by changing the pattern shape of the planarization film 19a and forming the dam-bank wall W when the edge cover 22 is formed in the method for manufacturing the organic EL display device 50a described in the first embodiment.
As described above, according to the organic EL display device 50c and the method of manufacturing the same of the present embodiment, in the third inorganic film forming step, the third inorganic film 27c is formed, the peripheral end portion of the third inorganic film 27c is located more inward than the peripheral end portion of the first inorganic film 26c and more outward than the peripheral end portion of the organic EL element 25 on the first inorganic film 26c formed in the first inorganic film forming step, and the wettability with respect to the droplets L to be the organic film 28c is higher than that of the first inorganic film 26 c. Therefore, in the subsequent organic film formation step, when the organic film 28c is formed by applying the ink jet method on the first inorganic film 26c so as to cover the third inorganic film 27c, the droplets L to become the organic film 28c are likely to be wet-spread on the surface of the third inorganic film 27c, and are less likely to be wet-spread on the surface of the first inorganic film 26 c. This makes it easy for the wetting and spreading of the droplets L to stop on the surface of the first inorganic film 26c exposed from the third inorganic film 27c, and therefore, the peripheral end portion of the organic film 28c constituting the sealing film 30c can be formed with high accuracy. Further, in a state where the peripheral end portion of the organic film 28c is located more inward than the peripheral end portion of the first inorganic film 26c and more outward than the peripheral end portion of the third inorganic film 27c, the second inorganic film 29c is formed so as to cover the peripheral end portion of the first inorganic film 26c and the organic film 28c in the second inorganic film forming step, and therefore, the sealing film 30c that ensures the sealing function can be formed.
In addition, according to the organic EL display device 50c and the method of manufacturing the same of the present embodiment, the surface of the organic EL element 25 is formed in the uneven shape by the edge cover 22, and therefore, the wetting diffusion of the liquid droplets L in the display region D can be suppressed.
In addition, according to the organic EL display device 50c and the method of manufacturing the same of the present embodiment, the weir groove G is provided to surround the display region D in the frame region F, and the first inorganic film 26a is also provided on the inner surface of the weir groove G, so that the liquid droplets L to become the organic film 28b enter the weir groove G in the organic film forming step, and the liquid droplets L can be reliably intercepted. Further, since the bank wall W is provided so as to surround the bank groove G outside the bank groove G and the peripheral end portion of the organic film 28c is in contact with the side surface of the bank wall W on the display region D side via the first inorganic film 26c, the liquid droplet L entering the bank groove G in the organic film forming step is in contact with the side surface of the bank wall W on the display region D side, and the liquid droplet L can be more reliably blocked.
Other embodiments
In each of the above embodiments, the organic EL layer having a 5-layer laminated structure of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer is exemplified, but the organic EL layer may have a three-layer laminated structure of the hole injection layer and hole transport layer, the light emitting layer, and the electron transport layer and electron injection layer, for example.
In addition, although the organic EL display device in which the first electrode is the anode and the second electrode is the cathode has been illustrated in the above embodiments, the present invention can be applied to an organic EL display device in which the laminated structure of the organic EL layers is reversed and the first electrode is the cathode and the second electrode is the anode.
In addition, although the organic EL display device including the element substrate in which the electrode of the TFT connected to the first electrode is the drain electrode is exemplified in the above embodiments, the present invention can be applied to an organic EL display device including an element substrate in which the electrode of the TFT connected to the first electrode is referred to as a source electrode.
In addition, although the organic EL display device is described as an example of the display device in each of the above embodiments, the present invention can be applied to a display device including a plurality of light emitting elements driven by current. For example, the present invention can be applied to a display device including a QLED (Quantum-dot light emitting diode) which is a light emitting element using a layer containing Quantum dots.
Industrial applicability
As described above, the present invention is useful for a flexible display device.
Description of the reference symbols
D display area
F frame area
G-shaped weir dam trench
L liquid droplet
S slit
W-shaped weir wall
10 resin substrate layer (substrate base)
18h Source electrode conductive layer (Wiring layer)
19a, 19b planarizing film
20a, 20b TFT layer
22 edge cover
24 second electrode (common electrode)
25 organic EL element (light emitting element)
26a to 26c first inorganic film
27a to 27c, 27ba third inorganic film
28a to 28c, 28ba organic film
29a to 29c, 29ba second inorganic film
30a to 30c, 30ba sealing film
50a to 50c, 50ba organic EL display device
Claims (12)
1. A display device, comprising:
a base substrate defining a display region for displaying an image and defining a frame region around the display region;
a light emitting element provided in the display region of the substrate; and
a sealing film which is provided in the display region and the frame region, covers the light-emitting element, and has a first inorganic film, an organic film, and a second inorganic film laminated in this order,
the above-mentioned display device is characterized in that,
the first inorganic film is provided so as to cover the light emitting element,
a third inorganic film is provided between the first inorganic film and the organic film, a peripheral end portion of the third inorganic film is positioned on the display region side with respect to a peripheral end portion of the first inorganic film and on the opposite side of the display region with respect to a peripheral end portion of the light-emitting element, and wettability with respect to droplets that become the organic film is higher than that of the first inorganic film,
the organic film is provided on the first inorganic film and covers the third inorganic film,
the second inorganic film is provided so as to cover the peripheral end portion of the first inorganic film and the organic film.
2. The display device according to claim 1,
a TFT layer is provided between the substrate and the light emitting element,
the TFT layer includes a wiring layer and a planarization film provided on the wiring layer,
the light-emitting element described above includes a common electrode,
in the planarization film, a slit penetrating the substrate base in the thickness direction is provided in the frame region along a boundary with the display region,
the common electrode is electrically connected to the wiring layer through the slit,
the peripheral end portion of the third inorganic film is located on the opposite side of the display region from the slit.
3. The display device according to claim 2,
in the frame region, a frame-shaped weir ridge is provided so as to surround the display region,
the first inorganic film is provided on an inner surface of the weir crest so as to surround the weir crest.
4. The display device according to claim 3,
the third inorganic film is provided to the edge of the bank groove on the display region side.
5. The display device according to claim 3,
the third inorganic film is provided to the bottom of the weir crest.
6. The display device according to any one of claims 3 to 5,
the bank groove is formed in the planarization film.
7. The display device according to any one of claims 3 to 6,
a dam bank wall is provided on the opposite side of the dam bank groove from the display region so as to cover the dam bank groove,
the peripheral end of the organic film is in contact with the side surface of the dam wall on the display region side through the first inorganic film.
8. The display device according to claim 7,
the light-emitting element comprises an edge cover,
the weir-dam wall is formed of the same material in the same layer as the edge cap.
9. The display device according to any one of claims 1 to 8,
the surface of the light emitting element is formed in a concave-convex shape.
10. The display device according to any one of claims 1 to 9,
the light-emitting element is an organic EL element.
11. A method of manufacturing a display device, comprising:
a light-emitting element forming step of forming a light-emitting element in a display region of a base substrate in which the display region for displaying an image is defined and a frame region is defined around the display region,
a sealing film forming step of forming a sealing film in which a first inorganic film, an organic film, and a second inorganic film are sequentially stacked in the display region and the frame region so as to cover the light emitting element,
the method of manufacturing the display device is characterized in that,
the sealing film forming step includes:
a first inorganic film forming step of forming a first inorganic film so as to cover the light emitting element,
a third inorganic film forming step of forming a third inorganic film having a peripheral end portion located on the display region side of the peripheral end portion of the first inorganic film and located on the opposite side of the peripheral end portion of the light-emitting element from the display region on the first inorganic film, the third inorganic film having higher wettability with respect to droplets of the organic film than the first inorganic film,
an organic film forming step of forming the organic film by applying the organic film on the first inorganic film by an inkjet method so as to cover the third inorganic film; and
and a second inorganic film forming step of forming a second inorganic film so as to cover the peripheral end portion of the first inorganic film and the organic film.
12. The method for manufacturing a display device according to claim 11,
the light-emitting element is an organic EL element.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| PCT/JP2018/007015 WO2019163134A1 (en) | 2018-02-26 | 2018-02-26 | Display device and method for manufacturing same |
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| CN111758300A true CN111758300A (en) | 2020-10-09 |
| CN111758300B CN111758300B (en) | 2023-08-29 |
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| US (1) | US11380871B2 (en) |
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| JP2019101128A (en) * | 2017-11-30 | 2019-06-24 | 株式会社ジャパンディスプレイ | Display, and method for manufacturing display |
| US12096650B2 (en) * | 2019-03-29 | 2024-09-17 | Sharp Kabushiki Kaisha | Display device |
| WO2024057521A1 (en) * | 2022-09-16 | 2024-03-21 | シャープディスプレイテクノロジー株式会社 | Display device and method for controlling display device |
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| CN111758300B (en) | 2023-08-29 |
| US20200403182A1 (en) | 2020-12-24 |
| WO2019163134A1 (en) | 2019-08-29 |
| US11380871B2 (en) | 2022-07-05 |
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