CN111696857B - Manufacturing method of vacuum bonding wafer and circular clamp assembly - Google Patents
Manufacturing method of vacuum bonding wafer and circular clamp assembly Download PDFInfo
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- CN111696857B CN111696857B CN201910181428.3A CN201910181428A CN111696857B CN 111696857 B CN111696857 B CN 111696857B CN 201910181428 A CN201910181428 A CN 201910181428A CN 111696857 B CN111696857 B CN 111696857B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 125000006850 spacer group Chemical group 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 10
- 239000010439 graphite Substances 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 abstract description 194
- 239000013078 crystal Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- Microelectronics & Electronic Packaging (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a manufacturing method of a vacuum bonding wafer and a circular clamp assembly, wherein the method comprises the following steps: assembling a plurality of spacers on the circumference of a circular jig; one end of each spacer, which is positioned in the circumference of the circular fixture, is a first preset distance away from the center of the circular fixture, and the first preset distance is adapted to the size diameter of the first size diameter wafer; sequentially placing a first and a second size wafers in the circular fixture, wherein the centers of the first and the second size wafers are superposed with the center of the circular fixture; the size diameter of the second size wafer is larger than that of the first size wafer; sequentially placing another second and second size wafers in the circular fixture, wherein the centers of the second and second size wafers are superposed with the center of the circular fixture; clamping each wafer, and putting graphite flakes into the wafer to obtain an assembled circular clamp assembly; and putting the circular clamp assembly into a second ruler diameter bonding machine table for technological operation to obtain a vacuum bonded first ruler diameter wafer. The invention can use the second size bonder to form the first size crystal wafer through vacuum bonding.
Description
Technical Field
The invention relates to the field of manufacturing, packaging and bonding of semiconductor integrated circuits, in particular to a manufacturing method of a vacuum bonding wafer and a circular clamp assembly and circular clamp equipment.
Background
The conventional large-size bonding machine can not bond small-size wafers. For example, a 4 "wafer cannot be bonded in an 8" bonder station. And 4 cun bonding machine, because the technical age problem, do not have technical outfit such as vacuum, fast temperature rise and fall. How to bond 4-inch wafers by the latest technical means becomes an urgent problem to be solved. One possible approach is to retrofit a 4 "wafer to service with an 8" tool (including transport system, pressure system, internal platen, etc.). However, such a total modification is costly and complicated to implement.
Disclosure of Invention
In view of the above, the present invention is directed to a method for vacuum bonding a wafer and a circular clamp assembly, so as to achieve a small amount of machine modification and achieve bonding of a small-sized wafer with a large-sized bonding machine.
Specifically disclosed is a method for manufacturing a vacuum bonded wafer, which comprises:
placing a circular clamp;
assembling a plurality of spacers on the circumference of the circular fixture at preset interval angles; one end of each spacer, which is positioned in the circumference of the circular fixture, is a first preset distance away from the center of the circular fixture, and the first preset distance is adapted to the size of the first size wafer;
placing a second-size wafer and a first-size wafer in the circular fixture in sequence, wherein the centers of the second-size wafer and the first-size wafer are superposed with the center of the circular fixture, and the second-size wafer and the first-size wafer are both positioned between the isolating sheet and the inner bottom surface of the circular fixture; the size diameter of the second size wafer is larger than that of the first size wafer;
placing another first-size wafer and another second-size wafer in the circular fixture in sequence, wherein the centers of the another first-size wafer and the another second-size wafer are superposed with the center of the circular fixture, and the another first-size wafer and the another second-size wafer are both positioned above the isolating sheet;
clamping the second-size wafer, the first-size wafer, the other first-size wafer and the other second-size wafer by using the fixing part of the circular clamp;
putting a graphite sheet above the other second-size wafer to obtain an assembled circular clamp assembly;
and putting the circular clamp assembly into the second ruler diameter bonding machine table for technological operation to obtain a vacuum bonded first ruler diameter wafer.
Wherein the vacuum bonded first-size wafers include the one first-size wafer vacuum bonded and the other first-size wafer vacuum bonded. Namely, a vacuum bonded first size wafer obtained by vacuum bonding the one first size wafer and the other first size wafer
Further, the second-size wafer is 8 inches in size, the first-size wafer is 4 inches in size, and the first preset distance is 40mm-50mm.
Further, the plurality of spacers include three spacers, and the preset interval angle is 120 °.
Further, the step of fitting the plurality of spacers on the circumference of the circular jig at a preset interval angle includes: and assembling a plurality of spacing pieces on the circumference of the circular fixture by using a transmission structure according to a preset interval angle.
Further, after placing another first-size wafer in the circular fixture, the method further comprises: and aligning the flat edges of the first-size wafer and the other first-size wafer.
The invention also provides a circular fixture assembly for vacuum bonding of a wafer, comprising:
a circular fixture;
the plurality of spacers are assembled on the circumference of the circular clamp according to a preset interval angle; one end of each spacer, which is positioned in the circumference of the circular fixture, is a first preset distance away from the center of the circular fixture, and the first preset distance is adapted to the size of the first size wafer;
a second size diameter wafer and a first size diameter wafer are sequentially placed in the circular clamp, the centers of the second size diameter wafer and the first size diameter wafer coincide with the center of the circular clamp, and the second size diameter wafer and the first size diameter wafer are both located between the isolation sheet and the inner bottom surface of the circular clamp; the size diameter of the second size wafer is larger than that of the first size wafer;
another first-scale-diameter wafer and another second-scale-diameter wafer are sequentially placed in the circular fixture, the centers of the another first-scale-diameter wafer and the another second-scale-diameter wafer are overlapped with the center of the circular fixture, and the another first-scale-diameter wafer and the another second-scale-diameter wafer are both positioned above the isolating sheet;
the fixing part of the circular clamp clamps the second-size wafer, the first-size wafer, the other first-size wafer and the other second-size wafer; and a graphite sheet is arranged above the other second-size wafer.
Further, the second-size wafer is 8 inches in size, the first-size wafer is 4 inches in size, and the first preset distance is 40mm-50mm.
Further, the plurality of spacers include three spacers, and the preset interval angle is 120 °.
Further, the circular clamp assembly still includes: and each spacer is assembled on the circumference of the circular clamp through the transmission structure.
Further, the flat edges of the one first-size wafer and the other first-size wafer are aligned.
The invention also provides a circular clamp device for vacuum bonding of a wafer, comprising:
a circular clamp;
the plurality of spacers are assembled on the circumference of the circular clamp according to a preset interval angle; one end of each spacer, which is positioned in the circumference of the circular fixture, is a first preset distance away from the center of the circular fixture, and the first preset distance is adapted to the size of the first size wafer;
a second size diameter wafer and a first size diameter wafer are sequentially placed in the circular clamp, the centers of the second size diameter wafer and the first size diameter wafer coincide with the center of the circular clamp, and the second size diameter wafer and the first size diameter wafer are both located between the isolation sheet and the inner bottom surface of the circular clamp; the size diameter of the second size wafer is larger than that of the first size wafer;
another first-size-diameter wafer and another second-size-diameter wafer are sequentially placed in the circular fixture, the centers of the another first-size-diameter wafer and the another second-size-diameter wafer are superposed with the center of the circular fixture, and the another first-size-diameter wafer and the another second-size-diameter wafer are located above the isolating sheet;
the fixing part of the circular clamp clamps the second-size wafer, the first-size wafer, the other first-size wafer and the other second-size wafer; and a graphite sheet is arranged above the other second-size wafer.
Further, the second-size wafer is 8 inches in size, the first-size wafer is 4 inches in size, and the first preset distance is 40mm-50mm.
Further, the plurality of spacers include three spacers, and the preset interval angle is 120 °.
Further, the circular clamp assembly still includes: and each spacer is assembled on the circumference of the circular clamp through the transmission structure.
Further, the flat edges of the one first-size wafer and the other first-size wafer are aligned.
According to the method for vacuum bonding of the wafer, the circular fixture assembly and the circular fixture equipment, disclosed by the invention, under the condition that excessive cost is not increased, the vacuum bonding process of the wafer with the small size by using the large-size bonding machine table can be realized by arranging the novel spacers, wherein one end of each spacer, which is positioned in the circumference of the circular fixture, is away from the center of the circular fixture by a first preset distance, and the first preset distance is matched with the size of the wafer with the first size, and only the reconstruction of the spacers is needed, so that the cost is low.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention. In the drawings, like reference numerals are used to indicate like elements. The drawings in the following description are illustrative of some, but not all embodiments of the invention. To a person skilled in the art, without inventive effort, other figures can be derived from these figures.
FIG. 1 is a flow chart of a method for fabricating vacuum bonded wafers according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a vacuum bonded wafer circular chuck assembly according to an embodiment of the present invention; and
fig. 3 is a schematic view of a circular gripper assembly for vacuum bonding wafers according to an embodiment of the invention.
Detailed Description
The exemplary embodiments of the present invention will now be described with reference to the accompanying drawings, however, the present invention may be embodied in many different forms and is not limited to the embodiments described herein, which are provided for complete and complete disclosure of the present invention and to fully convey the scope of the present invention to those skilled in the art. The terminology used in the exemplary embodiments illustrated in the accompanying drawings is not intended to be limiting of the invention. In the drawings, the same units/elements are denoted by the same reference numerals.
Unless otherwise defined, terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Further, it will be understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense.
Referring to fig. 1, fig. 1 is a flow chart illustrating a method for manufacturing a vacuum bonded wafer according to an embodiment of the present invention. The manufacturing method of the vacuum bonding wafer comprises the following steps:
step 101: placing a circular clamp;
step 102: assembling a plurality of spacers on the circumference of the circular fixture at preset interval angles; one end of each spacer, which is positioned in the circumference of the circular fixture, is a first preset distance away from the center of the circular fixture, and the first preset distance is adapted to the size of the first size wafer;
step 103: placing a second-size wafer and a first-size wafer in the circular fixture in sequence, wherein the centers of the second-size wafer and the first-size wafer are superposed with the center of the circular fixture, and the second-size wafer and the first-size wafer are both positioned between the isolating sheet and the inner bottom surface of the circular fixture; the size diameter of the second size wafer is larger than that of the first size wafer;
step 104: placing another first-size wafer and another second-size wafer in the circular fixture in sequence, wherein the centers of the another first-size wafer and the another second-size wafer are superposed with the center of the circular fixture, and the another first-size wafer and the another second-size wafer are both located above the isolating sheet;
step 105: clamping the second-size wafer, the first-size wafer, the other first-size wafer and the other second-size wafer by using a fixing part of the circular clamp;
step 106: putting a graphite sheet above the other second-size wafer to obtain an assembled circular clamp assembly;
step 107: and putting the circular clamp assembly into the second ruler diameter bonding machine table for technological operation to obtain a vacuum bonded first ruler diameter wafer.
Further, the second-size wafer is 8 inches in size, the first-size wafer is 4 inches in size, and the first preset distance is 40mm-50mm.
Further, the plurality of spacers include three spacers, and the preset interval angle is 120 °.
Further, the step of assembling the plurality of spacers on the circumference of the circular jig at a preset interval angle includes: and assembling a plurality of spacing pieces on the circumference of the circular fixture by using a transmission structure according to a preset interval angle.
Further, after placing another first-size wafer in the circular fixture, the method further comprises: and aligning the flat edges of the first-size wafer and the other first-size wafer.
Specifically, the process flow is exemplified by taking the dimension of the second-dimension wafer as 8 inches and the dimension of the first-dimension wafer as 4 inches:
1) A new spacer is customized and assembled to the fixture such that the extended length is between 40mm and 50mm from the center of the fixture and the retracted length is beyond 100mm from the center.
2) The first 4 "wafer is placed by a suction pen or the like, with its center at the center of the fixture.
3) The spacer is inserted and a second 4 inch wafer is placed with its center at the center of the fixture while aligning the first 4 inch wafer with the second 4 inch wafer edge.
4) And putting a second 8-inch accompanying wafer, wherein the center of the wafer is positioned at the center of the clamp.
5) After the steps are completed, all wafers are clamped and injected by utilizing a fixing part on the clamp.
6) Putting a graphite sheet on the last wafer; the whole clamp is placed into a bonding machine to carry out corresponding process steps, such as vacuum, heating, pressurizing and other process flows.
This embodiment is under the condition that does not increase too much cost, through setting up neotype spacing block, each the spacing block is located one end distance in the circumference of circular fixture the center of circular fixture is first preset distance, first preset distance suits with the chi footpath of first chi footpath wafer, can realize utilizing bonding processes such as the vacuum of big footpath bonding machine platform to little footpath wafer.
Fig. 2 is a schematic structural diagram of a circular chuck assembly for vacuum bonding a wafer according to an embodiment of the present invention. As shown in fig. 2, a circular gripper assembly includes:
a circular jig 21; the structure of which can be seen in figure 3. Fig. 3 is a schematic diagram of a circular chuck of a vacuum bonded wafer circular chuck assembly according to an embodiment of the present invention. The circular clamp 21 may include a handle 211, the circumference of which is designated 213;
a plurality of spacers 22 fitted on the circumference 213 of the circular jig 21 at a predetermined interval angle; one end 221 of each spacer 22 located in the circumference of the circular fixture 21 is a first preset distance from the center of the circular fixture 21, and the first preset distance is adapted to the diameter of the first- diameter wafer 24 or 25;
a second-size-diameter wafer 23 and a first-size-diameter wafer 24 are sequentially placed in the circular fixture 21, the centers of the second-size-diameter wafer 23 and the first-size-diameter wafer 24 coincide with the center of the circular fixture 21, and the second-size-diameter wafer 23 and the first-size-diameter wafer 24 are located between the isolation sheet 22 and the inner bottom surface of the circular fixture 21; the size diameter of the second size diameter wafer 23 is larger than that of the first size diameter wafer 24;
another first-size wafer 25 and another second-size wafer 26 are sequentially placed in the circular fixture 21, the centers of the another first-size wafer 25 and the another second-size wafer 26 are overlapped with the center of the circular fixture 21, and the another first-size wafer 25 and the another second-size wafer 26 are both located above the isolation sheet 22;
the fixing part (not shown in the figure) of the circular clamp 21 clamps the second-size wafer 23, the first-size wafer 24, the other first-size wafer 25 and the other second-size wafer 26; a graphite sheet (not shown) is disposed above the second size wafer 26.
Further, the size diameter of the second size wafer is 8 inches, the size diameter of the first size wafer is 4 inches, and the first preset distance is 40mm-50mm.
Further, the plurality of spacers include three spacers, and the preset interval angle is 120 °.
Further, the circular clamp assembly further comprises: a driving structure (not shown), by which each spacer 22 is fitted on the circumference of the circular jig 21.
Further, the flat edges of the one first-size wafer and the other first-size wafer are aligned.
Specifically, the process flow is illustrated by taking the case that the diameter of the second-diameter wafer is 8 inches, and the diameter of the first-diameter wafer is 4 inches:
in vacuum bonding, spacers (e.g., three) are typically placed between two wafers to prevent the wafers from contacting each other during vacuum pumping. In the 8-inch machine platform system, one end of the extended spacer is 99-85mm away from the center of the clamp (the spacer is placed at the edge of the 8-inch wafer), and the other end of the extended spacer is fixed on the clamp through a transmission structure. By customizing a new spacer, after the device is assembled, one end of the spacer, which extends out, is 40mm-50mm away from the center of the clamp (the spacer is placed at the edge position of a 4-inch wafer), and the other end of the spacer, which is at the same rear position as the retracted position, is 50mm away from the center of the clamp, is fixed on the clamp through a transmission structure. After the customized spacer is assembled, a first 8-inch accompanying wafer is placed in a clamp through a suction pen and other tools; the first 4 "wafer was then placed with its center at the center of the fixture. Inserting a spacer, and putting a second 4-inch wafer, wherein the center of the second wafer is positioned at the center of the clamp; and putting a second 8-inch accompanying wafer, wherein the center of the second 8-inch accompanying wafer is positioned at the center of the clamp, and simultaneously, the inch flat edges of the first 4-inch wafer and the second 4-inch wafer are aligned. After the steps are finished, clamping and injecting all wafers by using a fixing part on the clamp; putting a graphite sheet on the last wafer; the whole clamp can be put into a bonding machine for process operation.
A schematic diagram of a circular gripper assembly for vacuum bonding wafers according to an embodiment of the invention is provided.
Under the condition that excessive cost is not increased in the embodiment, through setting up neotype spacing block, each the spacing block is located one end distance in the circumference of circular jig the center of circular jig is first preset distance, first preset distance suits with the chi footpath of first chi footpath wafer, can realize utilizing bonding machine platform of big footpath to bonding processes such as vacuum of little footpath wafer.
The invention has been described with reference to a few embodiments. However, other embodiments of the invention than the ones disclosed above are equally possible within the scope of these appended patent claims, as these are known to those skilled in the art.
Generally, all terms used in the claims are to be interpreted according to their ordinary meaning in the technical field, unless explicitly defined otherwise herein. All references to "a/an/the [ device, component, etc ]" are to be interpreted openly as referring to at least one instance of said device, component, etc., unless explicitly stated otherwise. The steps of any method disclosed herein do not have to be performed in the exact order disclosed, unless explicitly stated.
Claims (10)
1. A method for manufacturing a vacuum bonded wafer, comprising:
placing a circular clamp;
assembling a plurality of spacers on the circumference of the circular fixture at preset interval angles; one end of each spacer, which is positioned in the circumference of the circular fixture, is a first preset distance away from the center of the circular fixture, and the first preset distance is adapted to the size of the first size wafer;
placing a second-size wafer and a first-size wafer in the circular fixture in sequence, wherein the centers of the second-size wafer and the first-size wafer are superposed with the center of the circular fixture, and the second-size wafer and the first-size wafer are both positioned between the isolating sheet and the inner bottom surface of the circular fixture; the size diameter of the second size wafer is larger than that of the first size wafer;
placing another first-size wafer and another second-size wafer in the circular fixture in sequence, wherein the centers of the another first-size wafer and the another second-size wafer are superposed with the center of the circular fixture, and the another first-size wafer and the another second-size wafer are both positioned above the isolating sheet;
clamping the second-size wafer, the first-size wafer, the other first-size wafer and the other second-size wafer by using the fixing part of the circular clamp;
putting a graphite flake above the other second-size wafer to obtain an assembled circular clamp assembly;
and putting the circular clamp assembly into a second ruler diameter bonding machine table for technological operation to obtain a vacuum bonded first ruler diameter wafer.
2. The method of claim 1, wherein the second diameter wafer has a diameter of 8 inches, the first diameter wafer has a diameter of 4 inches, and the first predetermined distance is 40mm to 50mm.
3. The method of manufacturing according to claim 2, wherein the plurality of spacers includes three spacers, and the predetermined interval angle is 120 °.
4. The manufacturing method according to any one of claims 1 to 3, wherein the step of fitting a plurality of spacers at a predetermined interval angle on the circumference of the circular jig comprises:
and assembling a plurality of spacing pieces on the circumference of the circular clamp by using a transmission structure according to a preset interval angle.
5. The method of manufacturing of claim 4, further comprising, after placing another first-sized wafer in the circular fixture:
aligning the flat edges of the one first-size wafer and the other first-size wafer.
6. A circular chuck assembly for vacuum bonding a wafer, the circular chuck assembly comprising:
a circular clamp;
the plurality of spacers are assembled on the circumference of the circular clamp according to a preset interval angle; one end of each spacer, which is positioned in the circumference of the circular fixture, is a first preset distance away from the center of the circular fixture, and the first preset distance is adapted to the size of the first size wafer;
a second-size-diameter wafer and a first-size-diameter wafer are sequentially placed in the circular clamp, the centers of the second-size-diameter wafer and the first-size-diameter wafer are overlapped with the center of the circular clamp, and the second-size-diameter wafer and the first-size-diameter wafer are both located between the isolating sheet and the inner bottom surface of the circular clamp; the size diameter of the second size wafer is larger than that of the first size wafer;
another first-scale-diameter wafer and another second-scale-diameter wafer are sequentially placed in the circular fixture, the centers of the another first-scale-diameter wafer and the another second-scale-diameter wafer are overlapped with the center of the circular fixture, and the another first-scale-diameter wafer and the another second-scale-diameter wafer are both positioned above the isolating sheet;
the fixing part of the circular clamp clamps the second-size wafer, the first-size wafer, the other first-size wafer and the other second-size wafer; and a graphite sheet is arranged above the other second-size wafer.
7. The circular gripper assembly of claim 6, wherein the second diameter wafer has a diameter of 8 inches, the first diameter wafer has a diameter of 4 inches, and the first predetermined distance is 40mm to 50mm.
8. The circular clamp assembly of claim 7, wherein the plurality of spacers comprises three spacers, and the predetermined angular spacing is 120 °.
9. The circular clamp assembly of any of claims 6-8, further comprising: and each spacer is assembled on the circumference of the circular clamp through the transmission structure.
10. The circular gripper assembly of claim 9, wherein the flat edges of the one first-size wafer and the another first-size wafer are aligned.
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| CN205944048U (en) * | 2016-08-05 | 2017-02-08 | 厦门市三安集成电路有限公司 | Wafer bonded equipment |
| CN109003932A (en) * | 2017-06-06 | 2018-12-14 | 苏斯微技术光刻有限公司 | For handling the system and the relevant technologies of the substrate pair of alignment |
| CN109192684A (en) * | 2018-09-11 | 2019-01-11 | 德淮半导体有限公司 | Wafer bonding machine |
| CN109285803A (en) * | 2018-09-20 | 2019-01-29 | 武汉新芯集成电路制造有限公司 | Wafer bonding method and device |
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