CN111647861A

CN111647861A - Tetrahedral amorphous carbon film and preparation method and application thereof

Info

Publication number: CN111647861A
Application number: CN202010545871.7A
Authority: CN
Inventors: 左潇; 汪爱英; 张栋; 陈仁德; 李�昊
Original assignee: Ningbo Institute of Material Technology and Engineering of CAS
Current assignee: Ningbo Institute of Material Technology and Engineering of CAS
Priority date: 2020-06-16
Filing date: 2020-06-16
Publication date: 2020-09-11

Abstract

The invention discloses a tetrahedral amorphous carbon film and a preparation method and application thereof. The preparation method of the tetrahedral amorphous carbon film comprises the following steps: etching the surface of the substrate; and then depositing a tetrahedral amorphous carbon film on the surface of the substrate by adopting a high-power pulse magnetron sputtering technology and taking a graphite target as a target material, wherein the high-power pulse duty ratio is 1-5%, the sputtering power is 700-1000W, the temperature of the substrate is less than 50 ℃, and sp (sp) in the structure of the tetrahedral amorphous carbon film³Is greater than 75%, the roughness of the tetrahedral amorphous carbon film is less than 2nm, and the hardness of the tetrahedral amorphous carbon film is greater than 40 GPa. The tetrahedral amorphous carbon film prepared by adopting the high-power pulse magnetron sputtering graphite target has high smoothness, and simultaneously, the invention optimizes the pulse duty ratio and the sputtering powerPreparation of sp at Low temperature³The content exceeds 75 percent, and the tetrahedral amorphous carbon film with the hardness of more than 40 GPa; the tetrahedral amorphous carbon film prepared by the method has good application prospect on the surface of a heat-sensitive base material.

Description

Tetrahedral amorphous carbon film and preparation method and application thereof

Technical Field

The invention belongs to the technical field of film preparation, and particularly relates to a tetrahedral amorphous carbon film and a preparation method and application thereof.

Background

The diamond-like thin film is a general name of a class of amorphous carbon thin film materials, and can be divided into a hydrogenated diamond-like carbon film and a hydrogen-free tetrahedral amorphous carbon film according to whether the film components contain hydrogen elements or not. Tetrahedral amorphous carbon (ta-C) films have higher sp than hydrogenated diamond-like carbon films³The material has the characteristics of bond content, higher hardness and elastic modulus, more excellent wear resistance and lubricity, better thermal stability (about 650 ℃), smoother surface and the like, so that the material is more suitable for the application fields of aviation, aerospace, high-precision tools and dies, microelectronics, magnetic storage and the like under severe working conditions. Particularly, in recent years, with the rapid development of magnetic storage density, it is required that a ta-C film used as a magnetic dielectric material on the surface of a magnetic disk not only have a thickness<3nm, and the material has comprehensive excellent characteristics of low-temperature growth, continuous compactness, corrosion resistance, super smoothness, low-friction self lubrication and the like, which provides a limit requirement for the preparation technology of the ta-C film material, and becomes one of the hot spots of scientific research and engineering attention at home and abroad at present.

At present, the cathode vacuum arc deposition technology with the advantages of high ionization rate, high deposition rate, mature technology and the like is a main method for preparing the tetrahedral amorphous carbon film, but due to the generation mechanism of arc spots, irregular movement of the arc spots and the like, the arc spots in the deposition process have short service life and poor process stability, and macroscopic large particles in the film cause serious codeposition pollution. The magnetron sputtering has the advantages of low-temperature deposition, wide application of base materials, compact and smooth coating and the like, but the target ionization rate is insufficient, and the obtained amorphous carbon film has an sp structure²Mainly, the hardness is low, and it is difficult to obtain a tetrahedral amorphous carbon film.

Disclosure of Invention

The invention mainly aims to provide a tetrahedral amorphous carbon film and a preparation method and application thereof, so as to overcome the defects of the prior art.

In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:

the embodiment of the invention provides a preparation method of a tetrahedral amorphous carbon film, which comprises the following steps:

etching the surface of the substrate; and the number of the first and second groups,

depositing a tetrahedral amorphous carbon film on the surface of the substrate by adopting a high-power pulse magnetron sputtering technology and taking a graphite target as a target material, wherein the high-power pulse duty ratio is 1-5%, the sputtering power is 700-1000W, the temperature of the substrate is less than 50 ℃, and sp in the structure of the tetrahedral amorphous carbon film³Is greater than 75%, the roughness of the tetrahedral amorphous carbon film is less than 2nm, and the hardness of the tetrahedral amorphous carbon film is greater than 40 GPa.

The embodiment of the invention also provides the tetrahedral amorphous carbon film prepared by the method, and sp in the structure of the tetrahedral amorphous carbon film³The content of (A) is more than 75%.

The embodiment of the invention also provides the application of the tetrahedral amorphous carbon film in the field of surface protection of a heat-sensitive substrate.

The embodiment of the invention also provides a device which comprises a substrate, wherein the tetrahedral amorphous carbon film is also arranged on the substrate.

Compared with the prior art, the invention has the beneficial effects that:

(1) the invention utilizes the technical advantages of high ionization rate of high-power pulse magnetron sputtering, and adopts the high-power pulse magnetron sputtering graphite target to prepare the tetrahedral amorphous carbon film, compared with the arc ion plating technology of the traditional preparation method of the tetrahedral amorphous carbon film, the prepared film contains large particles due to the arc ion plating technology, thereby increasing the surface roughness of the film, and the tetrahedral amorphous carbon film prepared by the invention has high smoothness, and the roughness is less than 2 nm;

(2) the high power pulse duty ratio and the sputtering power are proposed to be key factors influencing the formation of the tetrahedral amorphous carbon film: first, it is still difficult to achieve high ionization rates using high power pulsed magnetron sputtering because of the low sputtering yield of carbon atoms and the extreme difficulty in ionization. The inventor finds that when the pulse duty ratio isWhen the concentration is 1-5%, the high-power pulse magnetron sputtering graphite target can enter a high-density discharge state; secondly, at a fixed duty ratio, too low or too high sputtering power can cause sp in the prepared film structure³The content is reduced, when the sputtering power is lower, the pulse peak voltage and the peak current are both lower, so that the target ionization rate is lower, the sputtering power is improved, the pulse peak voltage can be improved, the sputtering power is kept stable after the peak voltage is increased to a certain degree, the pulse peak voltage is not changed any more and the pulse peak current is obviously increased, so that the film deposition rate is obviously increased, the structure becomes loose, and sp is increased³The content is reduced, and the sp is prepared by the invention through the optimized pulse duty ratio and the sputtering power³The content exceeds 75 percent, and the tetrahedral amorphous carbon film with the hardness of more than 40 GPa;

(3) the invention adopts a high-power pulse magnetron sputtering method with low pulse duty ratio, can prepare the tetrahedral amorphous carbon film at low temperature, and is suitable for various substrates with thermal sensitivity.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

FIG. 1 is a graph showing sp values in thin film structures prepared in examples 1 to 2 of the present invention and comparative examples 1 to 4³The content is changed with the sputtering power;

FIG. 2 shows sp in thin film structures prepared in examples 3 to 4 of the present invention and comparative examples 5 to 8³Content versus duty cycle plot.

Detailed Description

In view of the defects of the prior art, the inventor of the present invention has long studied and largely practiced to propose the technical solution of the present invention, which will be clearly and completely described below, and it is obvious that the described embodiments are a part of the embodiments of the present invention, but not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

One aspect of an embodiment of the present invention provides a method for preparing a tetrahedral amorphous carbon film, including:

and depositing a tetrahedral amorphous carbon film on the surface of the substrate by adopting a high-power pulse magnetron sputtering technology and taking a graphite target as a target material, wherein the duty ratio of high-power pulse is 1-5%, the sputtering power is 700-1000W, and the temperature of the substrate is less than 50 ℃.

In some more specific embodiments, the preparation method comprises: and (2) applying pulse negative bias to the substrate by adopting a high-power pulse magnetron sputtering technology and taking a graphite target as a target material and inert gas as working gas, so as to deposit the tetrahedral amorphous carbon film on the surface of the substrate, wherein the air pressure of a cavity is 0.2-0.3 Pa, the high-power pulse frequency is 200-250 Hz, the pulse width is 40-250 mus, the pulse negative bias of the substrate is-50-100V, and the deposition time is 1-60 min.

Further, the inert gas is argon.

Further, the temperature of the matrix is between room temperature and 50 ℃.

In some more specific embodiments, the preparation method comprises evacuating the reaction chamber to a vacuum level of 5.0 × 10^-3And then introducing inert gas, applying pulse negative bias to the substrate, and performing glow discharge etching treatment, wherein the atmosphere pressure of the inert gas is 1-3 Pa, the pulse negative bias of the substrate is-400V-800V, and the etching treatment time is 5-20 min.

Further, the inert gas is argon.

Further, the preparation method further comprises the following steps: before the glow discharge etching treatment is carried out on the matrix, the surface of the matrix is cleaned.

Further, the base material includes any one of metal, plastic, glass, and ceramic, but is not limited thereto.

Another aspect of the embodiments of the present invention also provides a tetrahedral amorphous carbon film prepared by the foregoing method, the tetrahedral amorphous carbon film having a structure in which sp is³The content of (A) is more than 75%.

Further, the hardness of the tetrahedral amorphous carbon film is more than 40 GPa.

Further, the roughness of the tetrahedral amorphous carbon film is less than 2 nm.

Furthermore, the thickness of the tetrahedral amorphous carbon film is 10-500 nm.

Another aspect of the embodiments of the present invention also provides a use of the tetrahedral amorphous carbon film described above in the field of surface protection of a heat-sensitive substrate.

Further, the heat sensitive matrix includes a plastic matrix, and is not limited thereto.

Another aspect of the embodiments of the present invention also provides an apparatus, including a substrate, on which the tetrahedral amorphous carbon film is further disposed.

Further, the substrate includes a metal substrate, and is not limited thereto.

The technical solutions of the present invention are further described in detail below with reference to several preferred embodiments and the accompanying drawings, which are implemented on the premise of the technical solutions of the present invention, and a detailed implementation manner and a specific operation process are provided, but the scope of the present invention is not limited to the following embodiments.

The experimental materials used in the examples used below were all available from conventional biochemical reagents companies, unless otherwise specified.

Example 1

Cleaning the substrate, fixing in a vacuum chamber, and vacuumizing to 5.0 × 10^-3Below Pa, then introducing argon gas into the chamber, adjusting the pressure of the chamber to 2Pa, applying pulse negative bias to the substrate to generate gas glow discharge, and etching the substrate? min, the negative bias of the substrate pulse is-600V; then introducing argon into the cavity for adjustmentThe air pressure of the joint cavity is 0.25Pa, a tetrahedral amorphous carbon film is prepared on the surface of the substrate by adopting high-power pulse magnetron sputtering, the target material is a graphite target, the high-power pulse frequency is 200Hz, the pulse width is 50 mus, the pulse duty ratio is 1 percent, the sputtering power is 700W, pulse negative bias of-50V is applied to the substrate in the sputtering process, the temperature of the substrate is between normal temperature and 35 ℃, the deposition time is 30min, and the sp in the prepared tetrahedral amorphous carbon film structure is tested³The bond content was 82%, the surface roughness was 1.2nm, and the hardness was 42 GPa.

Example 2

Cleaning the substrate, fixing in a vacuum chamber, and vacuumizing to 5.0 × 10^-3Introducing argon into the cavity under Pa, adjusting the pressure of the cavity to 2Pa, applying pulse negative bias to the substrate to generate gas glow discharge, and etching the substrate, wherein the pulse negative bias of the substrate is-600V; then argon is introduced into the cavity, the air pressure of the cavity is adjusted to be 0.25Pa, a tetrahedral amorphous carbon film is prepared on the surface of the substrate by adopting high-power pulse magnetron sputtering, the target material is a graphite target, the high-power pulse frequency is 200Hz, the pulse width is 50 mus, the pulse duty ratio is 1%, the sputtering power is 1000W, pulse negative bias of-50V is applied to the substrate in the sputtering process, the temperature of the substrate is normal temperature to 45 ℃, the deposition time is 30min, and through testing, sp in the prepared tetrahedral amorphous carbon film structure³The bond content was 85%, the roughness 1.5nm, and the hardness 46 GPa.

Example 3

Cleaning the substrate, fixing in a vacuum chamber, and vacuumizing to 5.0 × 10^-3Introducing argon into the cavity under Pa, adjusting the pressure of the cavity to 1Pa, applying pulse negative bias to the substrate to generate gas glow discharge, and etching the substrate, wherein the pulse negative bias of the substrate is-400V; then argon is introduced into the cavity, the air pressure of the cavity is adjusted to be 0.2Pa, a tetrahedral amorphous carbon film is prepared on the surface of the substrate by adopting high-power pulse magnetron sputtering, the target material is a graphite target, wherein the high-power pulse frequency is 200Hz, the pulse width is 50 mus, the pulse duty ratio is 1%, the sputtering power is 900W, pulse negative bias of-70V is applied to the substrate in the sputtering process, the temperature of the substrate is normal temperature to 41 ℃, the deposition time is 30min, and the test is carried out,sp in the structure of the prepared tetrahedral amorphous carbon film³The bond content was 83%, the roughness was 1.4nm, and the hardness was 42 GPa.

Example 4

Cleaning the substrate, fixing in a vacuum chamber, and vacuumizing to 5.0 × 10^-3Introducing argon into the cavity under Pa, adjusting the pressure of the cavity to 1Pa, applying pulse negative bias to the substrate to generate gas glow discharge, and etching the substrate, wherein the pulse negative bias of the substrate is-400V; then argon is introduced into the cavity, the air pressure of the cavity is adjusted to be 0.2Pa, a tetrahedral amorphous carbon film is prepared on the surface of the substrate by adopting high-power pulse magnetron sputtering, the target material is a graphite target, the high-power pulse frequency is 200Hz, the pulse width is 250 mus, the pulse duty ratio is 5 percent, the sputtering power is 900W, pulse negative bias of-70V is applied to the substrate in the sputtering process, the substrate temperature is normal temperature to 43 ℃, the deposition time is 30min, and through testing, sp in the prepared tetrahedral amorphous carbon film structure³The bond content was 78%, the roughness 1.4nm, and the hardness 40 GPa.

Example 5

Cleaning the substrate, fixing in a vacuum chamber, and vacuumizing to 5.0 × 10^-3Introducing argon into the cavity under Pa, adjusting the pressure of the cavity to 3Pa, applying pulse negative bias to the substrate to generate gas glow discharge, and etching the substrate, wherein the pulse negative bias of the substrate is-800V; then argon is introduced into the cavity, the air pressure of the cavity is adjusted to be 0.3Pa, a tetrahedral amorphous carbon film is prepared on the surface of the substrate by adopting high-power pulse magnetron sputtering, the target material is a graphite target, the high-power pulse frequency is 250Hz, the pulse width is 40 mus, the pulse duty ratio is 1 percent, the sputtering power is 750W, pulse negative bias of-100V is applied to the substrate in the sputtering process, the substrate temperature is normal temperature to 37 ℃, the deposition time is 1min, and the sp in the prepared tetrahedral amorphous carbon film structure is tested³The bond content was 83%, the roughness was 1.1nm, and the hardness was 43 GPa.

Example 6

Cleaning the substrate, fixing in a vacuum chamber, and vacuumizing to 5.0 × 10^-3Introducing argon into the cavity under Pa, adjusting the pressure of the cavity to 2Pa, and introducing argon into the cavityApplying pulse negative bias to the substrate to generate gas glow discharge, and etching the substrate, wherein the pulse negative bias of the substrate is-700V; then argon is introduced into the cavity, the air pressure of the cavity is adjusted to be 0.2Pa, a tetrahedral amorphous carbon film is prepared on the surface of the substrate by adopting high-power pulse magnetron sputtering, the target material is a graphite target, the high-power pulse frequency is 250Hz, the pulse width is 240 mus, the pulse duty ratio is 5 percent, the sputtering power is 1000W, pulse negative bias of-80V is applied to the substrate in the sputtering process, the temperature of the substrate is between normal temperature and 45 ℃, the deposition time is 60min, and the sp in the prepared tetrahedral amorphous carbon film structure is tested³The bond content was 77%, the roughness 1.6nm, and the hardness 40 GPa.

Comparative example 1

This example was a comparative example of examples 1 and 2, and the preparation process parameters were substantially the same as those of examples 1 and 2, except that in step 2, the high power pulse frequency was 200Hz, the pulse width was 50 μ s, the pulse duty was 1%, the sputtering power was 500W, and the sp value in the structure of the amorphous carbon film prepared by the test was measured³The bond content was 60%, the roughness was 1.1nm, and the hardness was 25 GPa.

Comparative example 2

This example was a comparative example of examples 1 and 2, and the preparation process parameters were substantially the same as those of examples 1 and 2, except that in step 2, the high power pulse frequency was 200Hz, the pulse width was 50 μ s, the pulse duty was 1%, the sputtering power was 600W, and the sp value in the structure of the amorphous carbon film prepared by the test was measured³The bond content was 73%, the roughness was 1.1nm, and the hardness was 32 GPa.

Comparative example 3

This example was a comparative example of examples 1 and 2, and the preparation process parameters were substantially the same as those of examples 1 and 2, except that in step 2, the high power pulse frequency was 200Hz, the pulse width was 50 μ s, the pulse duty was 1%, the sputtering power was 1100W, and the sp value in the structure of the amorphous carbon film prepared by the test was measured³The bond content was 74%, the roughness was 1.6nm, and the hardness was 35 GPa.

Comparative example 4

This example is a comparative example, a preparation tool, of example 1 and example 2The process parameters are basically the same as those of the embodiment 1 and the embodiment 2, the difference is that in the step 2, the pulse frequency of high power is 200Hz, the pulse width is 50 mus, the pulse duty ratio is 1%, the sputtering power is 1200W, and after testing, sp in the prepared amorphous carbon film structure³The bond content was 68%, the roughness was 1.6nm, and the hardness was 28 GPa.

FIG. 1 shows sp in thin film structures prepared in example 1, example 2 and comparative examples 1 to 4³The content is changed with the sputtering power; according to the results in the figure, under the same high power pulse frequency, pulse width and pulse duty ratio, when the optimized sputtering power is adopted, sp in the prepared film structure³The content is more than 80%, and sp is obtained when the sputtering power is not in the optimized range³The content is greatly reduced.

Comparative example 5

This example was a comparative example of examples 3 and 4, and the preparation process parameters were substantially the same as those of examples 3 and 4, except that in step 2, the high power pulse frequency was 200Hz, the pulse width was 500. mu.s, the pulse duty ratio was 10%, the sputtering power was 900W, and the sp value in the structure of the prepared amorphous carbon film was measured³The bond content was 72%, the roughness was 1.6nm, and the hardness was 30 GPa.

Comparative example 6

This example was a comparative example of examples 3 and 4, and the preparation process parameters were substantially the same as those of examples 3 and 4, except that in step 2, the pulse frequency of high power was 200Hz, the pulse width was 1000. mu.s, the pulse duty was 20%, the sputtering power was 900W, and the sp value in the structure of the prepared amorphous carbon film was measured³The bond content was 68%, the roughness was 1.5nm, and the hardness was 29 GPa.

Comparative example 7

This example was a comparative example of examples 3 and 4, and the preparation process parameters were substantially the same as those of examples 3 and 4, except that in step 2, the high power pulse frequency was 200Hz, the pulse width was 1500 μ s, the pulse duty was 30%, the sputtering power was 900W, and the sp value in the structure of the amorphous carbon film prepared by the test was measured³The bond content was 62%, the roughness was 1.5nm, and the hardness was 26 GPa.

Comparative example 8

This example was a comparative example of examples 3 and 4, and the preparation process parameters were substantially the same as those of examples 3 and 4, except that in step 2, the high power pulse frequency was 200Hz, the pulse width was 2000. mu.s, the pulse duty ratio was 40%, the sputtering power was 900W, and the sp value in the structure of the prepared amorphous carbon film was measured³The bond content was 54%, the roughness was 1.6nm, and the hardness was 20 GPa.

FIG. 2 shows sp in thin film structures prepared in example 3, example 4 and comparative examples 5 to 8³The content is plotted with the duty ratio, and according to the result in the graph, under the same high-power pulse frequency and sputtering power, when the optimized pulse width and duty ratio are adopted, sp in the prepared film structure³The content is more than 75%, and sp is obtained when the sputtering power is not in the optimized range³The content is greatly reduced.

Comparative example 9

Cleaning a substrate, fixing the substrate in a vacuum cavity, vacuumizing, introducing argon into the cavity, adjusting the air pressure of the cavity to 2Pa, applying pulse negative bias to the substrate to generate gas glow discharge, and etching the substrate, wherein the pulse negative bias of the substrate is-700V; then 1sccm argon gas is introduced into the cavity, the current of the arc ion graphite plating target material is set to be 60A, the voltage is set to be 16V, the bias voltage of the substrate is set to be-50V, an amorphous carbon film is deposited on the substrate, and sp in the obtained film structure³The content is 75%, the roughness is 12nm, and the hardness is 38 GPa.

In addition, the inventors of the present invention have also made experiments with other materials, process operations, and process conditions described in the present specification with reference to the above examples, and have obtained preferable results.

The aspects, embodiments, features and examples of the present invention should be considered as illustrative in all respects and not intended to be limiting of the invention, the scope of which is defined only by the claims. Other embodiments, modifications, and uses will be apparent to those skilled in the art without departing from the spirit and scope of the claimed invention.

The use of headings and chapters in this disclosure is not meant to limit the disclosure; each section may apply to any aspect, embodiment, or feature of the disclosure.

Throughout this specification, where a composition is described as having, containing, or comprising specific components or where a process is described as having, containing, or comprising specific process steps, it is contemplated that the composition of the present teachings also consist essentially of, or consist of, the recited components, and the process of the present teachings also consist essentially of, or consist of, the recited process steps.

It should be understood that the order of steps or the order in which particular actions are performed is not critical, so long as the teachings of the invention remain operable. Further, two or more steps or actions may be performed simultaneously.

While the invention has been described with reference to illustrative embodiments, it will be understood by those skilled in the art that various other changes, omissions and/or additions may be made and substantial equivalents may be substituted for elements thereof without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from its scope. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed for carrying out this invention, but that the invention will include all embodiments falling within the scope of the appended claims. Moreover, unless specifically stated any use of the terms first, second, etc. do not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another.

Claims

1. A method for preparing a tetrahedral amorphous carbon film is characterized by comprising the following steps:

depositing a tetrahedral amorphous carbon film on the surface of the substrate by adopting a high-power pulse magnetron sputtering technology and taking a graphite target as a target material, wherein the duty ratio of the high-power pulse is 1-5%, the sputtering power is 700-1000W, the temperature of the substrate is less than 50 ℃, and the tetrahedron is used for forming the tetrahedral amorphous carbon filmSp in the structure of amorphous carbon film³Is greater than 75%, the roughness of the tetrahedral amorphous carbon film is less than 2nm, and the hardness of the tetrahedral amorphous carbon film is greater than 40 GPa.

2. The production method according to claim 1, characterized by comprising: applying pulse negative bias to the substrate by adopting a high-power pulse magnetron sputtering technology and taking a graphite target as a target material and inert gas as working gas, thereby depositing the tetrahedral amorphous carbon film on the surface of the substrate, wherein the air pressure of a cavity is 0.2-0.3 Pa, the high-power pulse frequency is 200-250 Hz, the pulse width is 40-250 mus, the pulse negative bias of the substrate is-50 to-100V, and the deposition time is 1-60 min; preferably, the inert gas is argon.

3. The method of claim 2, wherein: the temperature of the matrix is between room temperature and 50 ℃.

4. The method of claim 1, comprising evacuating the reaction chamber to a vacuum level of 5.0 × 10^-3Introducing inert gas below Pa, applying pulse negative bias to the substrate, and performing glow discharge etching treatment, wherein the atmosphere pressure of the inert gas is 1-3 Pa, the pulse negative bias of the substrate is-400V-800V, and the etching treatment time is 5-20 min; preferably, the inert gas is argon.

5. The method of claim 4, further comprising: before the glow discharge etching treatment is carried out on the matrix, the surface of the matrix is cleaned.

6. The method of claim 1, wherein: the base material comprises any one of metal, plastic, glass and ceramic.

7. A tetrahedral amorphous carbon film produced by the method of any one of claims 1 to 6, characterized in thatCharacterized in that: sp in the structure of the tetrahedral amorphous carbon film³The content of (A) is more than 75%.

8. The tetrahedral amorphous carbon film according to claim 7, wherein: the hardness of the tetrahedral amorphous carbon film is more than 40 GPa;

and/or the roughness of the tetrahedral amorphous carbon film is less than 2 nm;

and/or the thickness of the tetrahedral amorphous carbon film is 10-500 nm.

9. Use of the tetrahedral amorphous carbon film according to any one of claims 7 to 8 in the field of surface protection of thermally sensitive substrates; preferably, the heat sensitive matrix comprises a plastic matrix.

10. A device comprising a substrate, characterized in that: the substrate is further provided with a tetrahedral amorphous carbon film according to any one of claims 7 to 8; preferably, the substrate comprises a metal substrate.