CN111609929B - Terahertz wave detection method based on semiconductor carrier modulation transmission laser - Google Patents
Terahertz wave detection method based on semiconductor carrier modulation transmission laser Download PDFInfo
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- CN111609929B CN111609929B CN202010521483.5A CN202010521483A CN111609929B CN 111609929 B CN111609929 B CN 111609929B CN 202010521483 A CN202010521483 A CN 202010521483A CN 111609929 B CN111609929 B CN 111609929B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 230000005540 biological transmission Effects 0.000 title claims abstract description 23
- 238000001514 detection method Methods 0.000 title claims abstract description 20
- 239000000969 carrier Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 230000000694 effects Effects 0.000 claims abstract description 4
- 230000005684 electric field Effects 0.000 claims abstract description 4
- 238000001914 filtration Methods 0.000 claims description 3
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002795 fluorescence method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 238000005215 recombination Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J2001/4242—Modulated light, e.g. for synchronizing source and detector circuit
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Abstract
The invention relates to a terahertz wave detection method based on semiconductor carrier modulation transmission laser, wherein a laser emits laser to irradiate a semiconductor, the semiconductor generates inner photoelectric effect to generate carriers, the carriers in the semiconductor directionally move and are combined under the action of a terahertz wave electric field, the concentration changes, the laser prompts the semiconductor to generate the carriers, the terahertz wave modulates the carrier concentration, the carrier concentration changes to modulate the transmission laser, the semiconductor outputs the transmission laser to be irradiated on a silicon chip, the transmission laser is reflected and input to a photodiode to be detected, and then a detection signal is accessed to an oscilloscope to be processed, so that the intensity information of the terahertz wave is obtained. The terahertz waveform is indirectly obtained by detecting the laser, the advantages of small transmission loss of the laser in a free space, good collimation, simple receiving device and the like are fully utilized, and the difficulty of directly detecting the terahertz waveform is reduced. Therefore, the technical method can be applied to terahertz remote sensing.
Description
Technical Field
The invention relates to a detection technology, in particular to a terahertz wave detection method based on semiconductor carrier modulation transmission laser.
Background
Terahertz radiation refers to electromagnetic waves with the frequency of 0.1 to 10THz, and the wave band has the characteristics of rich carried information, high temporal and spatial coherence, low photon energy and the like, and has great application value in numerous scientific fields. In this context, terahertz wave detection technology is extremely important.
At present, one of the commonly used terahertz wave detection methods is a method for modulating sound waves by terahertz radiation, and specifically includes: the femtosecond laser induces the plasma to generate sound waves, the terahertz wave energy modulates the sound waves, and the terahertz wave information can be obtained by measuring the intensity change of the sound waves. Another method for modulating fluorescence by terahertz radiation specifically comprises the following steps: the femtosecond laser induces plasma to radiate fluorescence, and the terahertz wave energy modulates the fluorescence, and the terahertz wave information can be obtained by measuring the change of fluorescence intensity.
However, in the above method, both the acoustic wave and the fluorescent signal are extremely weak and propagate in all directions, and the directivity is poor. In addition, the acoustic wave method uses a sound pressure detector to detect acoustic waves, and the fluorescence method uses a fluorescence monochromator and a photomultiplier to measure fluorescence, and measuring instruments are complex and expensive. Both methods cannot be popularized.
Disclosure of Invention
The invention provides a terahertz wave detection method based on semiconductor carrier modulation transmission laser aiming at the problems that detection is difficult due to large transmission loss of terahertz waves and the two detection methods are poor in directionality.
The technical scheme of the invention is as follows: a terahertz wave detection method based on semiconductor carrier modulation transmission laser is characterized in that a laser emits laser to irradiate a semiconductor, the semiconductor generates inner photoelectric effect to generate carriers, a terahertz wave source emits terahertz waves, the terahertz waves pass through a delay system with set frequency movement and then penetrate through a silicon wafer and finally irradiate the semiconductor, the carriers in the semiconductor directionally move and are compounded under the action of a terahertz wave electric field, the concentration of the carriers is changed, the semiconductor is driven by the laser to generate the carriers, the terahertz waves modulate the carrier concentration, the carrier concentration change modulates the transmission laser, the semiconductor outputs the transmission laser to be irradiated on the silicon wafer, the transmission laser is reflected and input to a photodiode to be detected, and then a detection signal is connected to an oscilloscope to be processed to obtain the intensity information of the terahertz wave.
The oscilloscope processes the received laser signal by the low-pass filtering function of the oscilloscope, and the obtained waveform reflects the intensity information of the terahertz wave.
The invention has the beneficial effects that: the terahertz wave detection method based on the semiconductor carrier modulation transmission laser ingeniously utilizes the laser penetrating through the semiconductor material to extract the terahertz wave information carried by the laser, and the used detection components are low in manufacturing cost and are relatively common; the method detects laser without directly detecting terahertz waves, fully utilizes the better transmission characteristic of the laser in free space than the terahertz waves, has the greatest advantages of small laser energy loss and good collimation, and can be applied to the remote detection of the terahertz waves.
Drawings
FIG. 1 is a schematic view of a measuring apparatus according to the present invention;
FIG. 2a is a laser pulse sequence diagram without terahertz wave modulation;
FIG. 2b is a diagram of a laser pulse sequence with terahertz wave modulation according to the present invention;
FIG. 2c is a waveform diagram of an oscilloscope modulated by terahertz waves and low-pass filtered according to the present invention.
Detailed Description
As shown in the schematic diagram of the measuring device of the method in FIG. 1, firstly, a laser 1 with a repetition frequency of 100MHz, a pulse width of 90fs and a center wavelength of 1550nm emits laser to irradiate a semiconductor 2, the laser interacts with semiconductor materials, and the semiconductor generates internal photoelectric effect to generate carriers. In the process, part of laser penetrates through the semiconductor material, the transmitted light hits the silicon chip 3 and is reflected, the reflected laser 4 is input into the photodiode 5 to be detected, and then a detection signal is connected into the oscilloscope 6 to be processed and observed. When there is no modulation of terahertz wave, the obtained laser transmission signal appears as a series of pulse sequences with equal amplitude as shown in fig. 2 a. When terahertz wave modulation is performed, namely, terahertz waves with the pulse width of 1ps are emitted by the ether hertz wave source 7, sequentially pass through the reflector 8, the delay line 9 moving at a set frequency and the reflector 10, then pass through the silicon wafer 3, and finally irradiate the semiconductor 2, and under the action of a terahertz wave electric field, carriers in the semiconductor are directionally moved and combined, so that the concentration is changed. The laser prompts the semiconductor to generate carriers, the terahertz waves modulate the carrier concentration, and the carrier concentration change modulates the transmission laser, which is equivalent to the terahertz waves modulating the transmission laser. Therefore, after modulation of the terahertz wave, the transmitted laser contains information of the terahertz wave, the waveform of which is shown in fig. 2b, which still appears as a series of pulse sequences, but the amplitude of which fluctuates up and down. This is due to: in the modulation process, the terahertz wave amplitude is increased or decreased, so that the acceleration or deceleration recombination of carriers is promoted, and the concentration of the carriers is changed; while carrier concentration variations cause variations in the intensity of the transmitted laser light.
In addition, since the laser repetition frequency is much greater than the scanning frequency of the delay line (approximately 100M times), the envelope of the laser pulse sequence reflects the information of the terahertz wave, so that the laser signal is processed by the low-pass filtering function of the oscilloscope, an image in 2c can be obtained, and the waveform can reflect the intensity information of the terahertz wave.
Claims (2)
1. A terahertz wave detection method based on semiconductor carrier modulation transmission laser is characterized in that a laser emits laser to irradiate a semiconductor, the semiconductor generates inner photoelectric effect to generate carriers, a terahertz wave source emits terahertz waves, the terahertz waves pass through a delay system with set frequency movement and then penetrate through a silicon wafer and finally irradiate the semiconductor, the carriers in the semiconductor directionally move and are compounded under the action of a terahertz wave electric field, the concentration changes, the laser prompts the semiconductor to generate the carriers, the terahertz waves modulate the carrier concentration, the carrier concentration changes and modulate the transmission laser, the semiconductor output transmission laser is irradiated on the silicon wafer and is reflected and input to a photodiode to be detected, and then a detection signal is connected to an oscilloscope to be processed to obtain the intensity information of the terahertz waves.
2. The terahertz wave detection method based on semiconductor carrier modulation transmission laser as claimed in claim 1, wherein the oscilloscope processes the received laser signal with its low-pass filtering function, and the obtained waveform reflects the intensity information of the terahertz wave.
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| JP4095486B2 (en) * | 2003-04-18 | 2008-06-04 | 浜松ホトニクス株式会社 | Terahertz electromagnetic wave compatible wafer, terahertz generation detecting device and manufacturing method thereof |
| CN103487953B (en) * | 2013-08-20 | 2016-07-13 | 中国工程物理研究院流体物理研究所 | A kind of complete light-operated Terahertz intensity modulator and Terahertz intensity modulator |
| CN105824138B (en) * | 2016-04-13 | 2019-02-15 | 电子科技大学 | Optically controlled terahertz modulator based on graphene/doped silicon composite double-layer structure |
| CN105914565A (en) * | 2016-07-08 | 2016-08-31 | 电子科技大学 | Optical control terahertz wave amplitude modulator based on silicon nanoneedle |
| CN108227244B (en) * | 2018-03-19 | 2020-01-03 | 中国科学技术大学 | Modulator for regulating terahertz wave amplitude and manufacturing method |
| CN109884807A (en) * | 2019-03-13 | 2019-06-14 | 首都师范大学 | Dynamic modulation method of terahertz wave phase |
| CN110095888B (en) * | 2019-05-07 | 2021-07-02 | 电子科技大学 | Terahertz modulator based on silicon-based microstructure on SOI and system and method |
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Non-Patent Citations (1)
| Title |
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| Terahertz time-domain spectroscopy and micro-cavity components for probing samples: a review;Lin CHEN等;《Front Inform Technol Electron Eng》;20191231;第20卷(第5期);第591-607页 * |
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