CN111584666A - 一种新的p型晶硅电池结构及其制备工艺 - Google Patents
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- 229910020776 SixNy Inorganic materials 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
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- 238000000151 deposition Methods 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910015845 BBr3 Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 7
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 7
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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Abstract
本发明涉及P型晶硅电池生产领域。一种新的P型晶硅电池结构，背面膜层结构自下而上为SixNy/SiOxNy/BSG/P++，其中膜之上为P型硅本体，其中P++层厚100‑200nm，硅基体背表面掺杂浓度为1*1019‑5*1019/cm‑3之间，BSG膜厚为3‑5nm，掺杂浓度为3*1020‑5*1020/cm‑3，SiOxNy的折射率为1.7‑2.0，厚度为3‑5nm，SixNy的折射率为2.1‑2.3，厚度为120‑150nm。本发明还涉及一种制备工艺。本发明提出了一种适合P型晶硅电池的高效电池技术路线，相比现有PERC电池，转换效率高，投资成本低，且升级周期短，见效快。
Description
技术领域
本发明涉及P型晶硅电池生产领域。
背景技术
当前，P型晶硅电池主流产品为PERC电池，经过近2-3年的飞速发展，PERC产品已经成熟且遇到技术瓶颈。下一代的高效电池中，N型晶硅成为关注的热点，但不论N型TOPCon，亦或HIT产品，目前设备投入大，关键材料与设备未能完全国产化，投资回报期长，风险较大。
发明内容
本发明所要解决的技术问题是：如何找到一种适合P型晶硅电池、可替代PERC电池的，未来高效电池技术方向，其与当前技术重叠度高，可通过简单改造或升级即可完成整线工艺的制备，降低制造成本和投资风险。
本发明所采用的技术方案是：一种新的P型晶硅电池结构，背面膜层结构自下而上为SixNy/SiOxNy/BSG/P++，其中膜之上为P型硅本体，其中P++层厚100-200nm，硅基体背表面掺杂浓度为1*1019-5*1019/cm-3之间，BSG膜厚为3-5nm，掺杂浓度为3*1020-5*1020/cm-3，SiOxNy的折射率为1.7-2.0，厚度为3-5nm，SixNy的折射率为2.1-2.3，厚度为120-150nm。
一种新的P型晶硅电池结构制备工艺，背面膜层结构制备过程安如下的步骤进行
步骤一、背面P++及BSG膜层的制备，采用硼扩散方式，石英炉管通工艺气体BBr3、携带气体N2、反应气体O2，通过高温沉积一层BSG，然后在N2和O2氛围下进行推进，与硅片背面形成P++层，其中P++层厚100-200nm，硅基体背表面掺杂浓度为1*1019-5*1019/cm-3之间，BSG膜厚为3-5nm，掺杂浓度为3*1020-5*1020/cm-3。
步骤二、背面清洗。清洗边缘与背面BSG。
步骤三、背面SixNy/SiOxNy膜层的制备，采用PECVD的方式，首先沉积SiOxNy，氧源为N2O，同时通硅烷（SiH4）和NH3，制备所得SiOxNy的折射率为1.7-2.0，厚度为3-5nm；SixNy的沉积，通SiH4和NH3，制备所得SixNy的折射率为2.1-2.3，厚度为120-150nm。
x和y代表原子比，其指取正实数。
本发明的有益效果是：本发明提出了一种适合P型晶硅电池的高效电池技术路线，相比现有PERC电池，转换效率高，投资成本低，且升级周期短，见效快。
附图说明
图1是本发明P型晶硅电池背面膜层结构示意图。
具体实施方式
参照图1，一种新的P型晶硅电池结构及其制备工艺，背面膜层结构自下而上为SixNy/SiOxNy/BSG/P++，其中BSG/P++通过硼扩散形成，P++层厚100-200nm，贴近硅基体背表面掺杂浓度为1x1019-5x1019/cm-3之间，BSG膜厚为3-5nm，掺杂浓度为3x1020-5x1020/cm-3；SixNy/SiOxNy膜层使用PECVD设备沉积，SiOxNy的折射率为1.7-2.0，厚度为3-5nm，SixNy的折射率为2.1-2.3，厚度为120-150nm，叠层总厚度125-155nm。
具体的制备工艺实施过程如下：
1. 清洗制绒。制绒使用碱制绒，刻蚀量控制在0.4-0.6g，反射率7%-12%。
2. 扩散制结。
3. 刻蚀。使用碱刻蚀，刻蚀量控制在0.14-0.17g，反射率35%-45%。
4. 高温氧化。
5. 正面氮化硅膜制备。在管式PECVD中制备氮化硅，折射率为2.03-2.10，膜厚为75-80nm。
6. 背面P++及BSG膜层的制备。采用硼扩散方式，首先以25slm的流量通N2，升温至900℃，并等待8min；然后分别通入25slm的N2、200-400sccm的N2-BBr3、150-300sccm的O2，由900-960℃进行变温沉积，时间8-15min；接着，待温度升至960℃后，通入6-10slm的N2、4-6slm的O2，进行高温推进，时间5-10min；最后通入10slm的N2，由960-840℃进行降温退舟。
7. 背面清洗。清洗边缘与背面BSG。使用原液浓度为49%HF，与H2O配置成1%体积浓度的混合液，反应时间为1min。
8. 背面SixNy/SiOxNy膜层的制备。使用PECVD设备，沉积SiOxNy时压力为1500-2000mTorr,温度450-500℃，功率为10000-12000W,脉冲开关比为1:16，所通SiH4/NH3/N2O=1/0.5/5.2至1/0.8/5.8,时间为15-45s；沉积SixNy时压力为1000-2000mTorr,温度450-500℃，功率为11000-13000W,脉冲开关比为1:12，所通SiH4/NH3 =1/4至1/10,时间为800-1200s。
9. 背面激光开槽。
10. 丝网印刷及高温烧结。
Claims (2)
1.一种新的P型晶硅电池结构，其特征在于：背面膜层结构自下而上为SixNy/SiOxNy/BSG/P++，其中膜之上为P型硅本体，其中P++层厚100-200nm，硅基体背表面掺杂浓度为1*1019-5*1019/cm-3之间，BSG膜厚为3-5nm，掺杂浓度为3*1020-5*1020/cm-3，SiOxNy的折射率为1.7-2.0，厚度为3-5nm，SixNy的折射率为2.1-2.3，厚度为120-150nm。
2.一种权利要求1所述的新的P型晶硅电池结构制备工艺，其特征在于：背面膜层结构制备过程安如下的步骤进行
步骤一、背面P++及BSG膜层的制备，采用硼扩散方式，石英炉管通工艺气体BBr3、携带气体N2、反应气体O2，通过高温沉积一层BSG，然后在N2和O2氛围下进行推进，与硅片背面形成P++层，其中P++层厚100-200nm，硅基体背表面掺杂浓度为1*1019-5*1019/cm-3之间，BSG膜厚为3-5nm，掺杂浓度为3*1020-5*1020/cm-3；
步骤二、背面清洗，清洗边缘与背面BSG；
步骤三、背面SixNy/SiOxNy膜层的制备，采用PECVD的方式，首先沉积SiOxNy，氧源为N2O，同时通硅烷（SiH4）和NH3，制备所得SiOxNy的折射率为1.7-2.0，厚度为3-5nm； SixNy的沉积，通SiH4和NH3，制备所得SixNy的折射率为2.1-2.3，厚度为120-150nm。
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|---|---|---|---|---|
| CN112018206A (zh) * | 2020-09-24 | 2020-12-01 | 山西潞安太阳能科技有限责任公司 | 一种n型晶硅电池结构及其制备工艺 |
| CN112071959A (zh) * | 2020-09-24 | 2020-12-11 | 山西潞安太阳能科技有限责任公司 | 一种新型p型晶硅电池背接触钝化制备工艺 |
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