CN111552098B - Gallium selenide/tin disulfide heterojunction film electric control terahertz intensity modulation device - Google Patents
Gallium selenide/tin disulfide heterojunction film electric control terahertz intensity modulation device Download PDFInfo
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- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 title claims abstract description 9
- ALRFTTOJSPMYSY-UHFFFAOYSA-N tin disulfide Chemical compound S=[Sn]=S ALRFTTOJSPMYSY-UHFFFAOYSA-N 0.000 title claims abstract description 9
- 229910005543 GaSe Inorganic materials 0.000 claims abstract description 27
- 230000010287 polarization Effects 0.000 claims abstract description 6
- 239000002052 molecular layer Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 239000007791 liquid phase Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
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- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
本发明属于太赫兹技术领域领域，为调制器件结构简单，调制度大，灵敏度高。为此，本发明采取的技术方案是，硒化镓/二硫化锡异质结膜电控太赫兹强度调制器件，包括GaSe/SnS2异质结膜、附加电极、主动控制直流电源、线性偏振的THz源，线性偏振的THz源生成的太赫兹波入射到GaSe/SnS2异质结薄膜，GaSe/SnS2异质结膜为在硅酸盐玻璃衬底上采用液相剥离方法或者化学气相沉积CVD方法制备，形成单分子层或者少分子层的结构；主动控制直流电源通过附加电极，以垂直于太赫兹波偏振方向对GaSe/SnS2异质结薄膜施加调制电压。本发明主要应用于太赫兹强度调制器件设计制造场合。
The invention belongs to the technical field of terahertz, and has the advantages of simple structure of the modulation device, large modulation degree and high sensitivity. To this end, the technical solution adopted in the present invention is that a gallium selenide/tin disulfide heterojunction film electronically controlled terahertz intensity modulation device includes a GaSe/SnS 2 heterojunction film, an additional electrode, an active control DC power supply, and a linearly polarized THz source, the terahertz wave generated by the linearly polarized THz source is incident on the GaSe/SnS 2 heterojunction film. preparation, forming a monomolecular layer or a few-molecular layer structure; actively controlling the DC power supply to pass through an additional electrode to apply a modulation voltage to the GaSe/SnS 2 heterojunction film perpendicular to the polarization direction of the terahertz wave. The invention is mainly applied to the design and manufacture occasions of the terahertz intensity modulation device.
Description
Technical Field
The invention belongs to the technical field of terahertz, and relates to an electric control terahertz intensity modulation device for a gallium selenide/tin disulfide heterojunction film.
Background
Terahertz wave is an electromagnetic wave with a wavelength between millimeter wave band and near infrared wave band, and the frequency is from 0.1THz-10 THz 1. Compared with electromagnetic radiation of other bands, terahertz waves have many excellent properties, such as: the transient property, namely the terahertz pulse width is in the sub-picosecond magnitude, and can be used for transient spectrum research of sub-picosecond and even femtosecond time resolution; the penetrability is high, and the method can be used for security inspection and anti-terrorism; low damage, namely low radiation photon energy, and is mainly used for biological nondestructive detection; the fingerprint spectrum characteristics, namely the vibration and rotation energy levels of most polar molecules are in a terahertz wave band, so that the method can be used for characterization of substances [2-4 ].
In the aspect of research and development of terahertz modulation devices, the terahertz modulation devices are mainly divided into passive devices and active devices at present. The passive device is mainly composed of conventional materials or artificial metamaterials, such as: 5-7 parts of lens, beam splitter, grating and polarizing device; active devices are mainly made of materials with a particularly sensitive response, such as: piezoelectric, electrooptical, acousto-optic, magneto-optic, phase change and other materials, or based on the combination of the controllable materials and artificial metamaterials, and characteristic parameters of transmission or reflection of terahertz waves are actively regulated and controlled by an external electric field, an optical field, a magnetic field and a thermal field [8-10 ].
In recent years, a two-dimensional material is widely regarded and researched as a graphene-like semiconductor material in the application of the photoelectric field, the acting wavelength range of the material can cover a terahertz waveband (0.1-1THz), and the wide-spectrum-range modulation can be realized, so that the development and the application of a terahertz modulator based on the two-dimensional material become possible [11 ].
Van der Waals heterostructures (van der Waals heterostructures) refer to p-n junction structures that intersect two different types (n-type and p-type) of semiconductor two-dimensional materials, thereby forming a new molecular bond linkage. This structure not only combines the respective photoelectric properties of the two materials, but also produces many new physical or chemical properties [12 ]]. If such a heterojunction is a p-n junction layer formed by two simple films joined together in the vertical direction by van der waals force, a heterojunction film is formed. In such a heterojunction film, the sensitivity of the photoelectric response is increased due to the presence of the heterojunction electric field, and thus is particularly suitable as a photoelectric modulation device. The invention is based on gallium selenide/tin disulfide (GaSe/SnS)2) An electrically controlled terahertz intensity modulation device for a heterojunction membrane.
Reference documents:
[1]Ferguson B,Zhang X C.Materials for terahertz science and technology[J].Nature materials,2002,1(1):26.
[2]Grischkowsky D,van Exter M.Characterization of an optoelectronic terahertz beam system[J].IEEE Trans.Microwave Theory Tech.,1990,38:1684-1691.
[3]Mickan S,Abbott D,Munch J,et al.Analysis of system trade-offs for terahertz imaging[J].Microelectronics Journal,2000,31(7):503-514.
[4]Kawase K,Ogawa Y,Watanabe Y,et al.Non-destructive terahertz imaging of illicit drugs using spectral fingerprints[J].Optics express,2003,11(20):2549-2554.
[5]Scherger B,Scheller M,Jansen C,et al.Terahertz lenses made by compression molding of micropowders,Appl.Opt.,2011,50(15):2256-2262.
[6]Berry C.W.and Jarrahi M.,Broadband terahertz polarizing beam splitter on a Polymer Substrate,J Infrared Milli Terahz Waves,2012,33:127-130.
[7]Gan Qiaoqiang,Fu Zhan,Ding Yujie et al.,Ultrawide-bandwidth slow-light system based on THz plasmonic graded metallic grating structures,Phys.Rev.Lett.,2008,100:256803.
[8]Minah Seo,Jisoo Kyoung,,Hyeongryeol Park et al.,Active terahertz nanoantennas based on VO 2phase transition,Nano Lett.,2010,10:2064–2068.
[9]Jianqiang Gu,Ranjan singh,Xiaojun Liu,et al.,Active control of electromagnetically induced transparency analogue in terahertz metamaterials,2012,Nat.Commun.3:1151
[10]Oliver Paul,Christian Imhof,Bert
et al.,Polarization-independent active metamaterial for high-frequency terahertz modulation,2008,Opt.Express,2008,17(2):819-827.
[11]Liu.L,Park J,Siegel.D.A,McCarty.K.F,et al.Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges[J].Science,2014,343(6167),163-167
[12]Novoselov K S,Mishchenko A,Carvalho A,et al.2D materials and van der Waals heterostructures[J].Science,2016,353(6298):aac9439。
disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a GaSe/SnS2And an external electric field is added on the heterojunction film to realize the terahertz intensity modulation device for active control. The modulation device has the advantages of simple structure, large modulation degree and high sensitivity. Therefore, the technical scheme adopted by the invention is that the gallium selenide/tin disulfide heterojunction film electric control terahertz intensity modulation device comprises GaSe/SnS2The terahertz waves generated by the linearly polarized THz source are incident to the GaSe/SnS2Heterojunction thin film, GaSe/SnS2The heterojunction film is prepared on a silicate glass substrate by adopting a liquid phase stripping method or a Chemical Vapor Deposition (CVD) method to form a monomolecular layer or a small molecular layer structure; actively controlling a direct current power supply to couple GaSe/SnS in a direction vertical to the polarization direction of the terahertz waves through an additional electrode2The heterojunction film applies a modulating voltage.
The additional electrode material is tin-doped indium oxide, gold or silver.
The active control direct current power supply is a programmable direct current power supply, and direct current voltage and any waveform required by electric control are applied between the additional electrodes.
The invention has the characteristics and beneficial effects that:
at present, intensity modulation devices for terahertz wave bands are mainly divided into a metal mesh grid, a carbon nano tube and an artificial metamaterial. The first two devices belong to passive devices and cannot be actively regulated, and although artificial metamaterials can be designed in principle at will, the artificial metamaterials are actually designed to be functions, and are only feasible for specific (designed) wavelengths, so that broadband modulation cannot be realized. In addition, the photoetching and etching processes are required, the process is complex, the cost is high, and particularly, the size after preparation is too small, and the large-area application is not easy. In addition, most metamaterials are metallic materials and dielectric materials, so temperature control, electric control and magnetic control are mainly adopted for active modulation, but the modulation degree and the tuning range are limited. Light based on two-dimensional materialsThe electric device is a high-sensitivity device with development prospect, and the invention is based on GaSe/SnS2The technical characteristics and effects of the electric control terahertz intensity modulation device for the heterojunction membrane are as follows: (1) GaSe/SnS2The preparation of the heterojunction film adopts a liquid phase stripping method or a Chemical Vapor Deposition (CVD) method, the preparation is relatively simple, and the universality and the popularity are high; (2) GaSe/SnS2The heteroconjunctiva belongs to a monomolecular layer or a small molecular layer, and the upper layer and the lower layer are bound by weak van der Waals force; (3) the voltage applied to the lateral side of the heterojunction film can not only increase the anisotropy of the molecular film layer, but also regulate and control the additional internal electric field of the heterojunction, thus obviously changing the density and the mobility of photon-generated carriers at the heterojunction, and further increasing the modulation degree of the transmitted light field intensity; (4) the control voltage source adopts a programmable direct current voltage source, can design and program a modulation voltage signal with any waveform and amplitude in forward and reverse directions, and can realize the random control of the intensity signal; (5) the modulation device belongs to a broadband modulator, and can realize modulation effect in visible light to terahertz wave bands.
Description of the drawings:
FIG. 1 is an experimental schematic of the present invention.
The adopted devices comprise 1 femtosecond laser pumping source, 2 terahertz wave generating crystal, 3 parabolic mirror pair and 4 GaSe/SnS2A heterojunction membrane, 5, a terahertz detector and 6, a programmable direct current power supply.
Fig. 2 is a graph showing the effect of the device of the present invention on the intensity modulation degree of the transmitted terahertz wave after applying a dc voltage.
Detailed Description
The invention provides a method for preparing GaSe/SnS2And an external electric field is added on the heterojunction film to realize the terahertz intensity modulation device for active control. The modulation device has simple structure, and the GaSe/SnS can be increased by applying variable voltage to the lateral electrodes2Changes in carrier mobility and density in the heterojunction thin film, and anisotropy of the heterojunction film. The active modulation of the intensity of the transmitted polarized terahertz waves is realized by controlling the external voltage, the modulation degree is large, and the sensitivity is high. The technical scheme adopted by the invention is based on GaSe/SnS2An electronic control terahertz intensity modulation device of a heterojunction film comprises: GaSe/SnS2The device comprises a heteroconjunctiva, an additional electrode, an active control direct current power supply, a linearly polarized THz source and a terahertz detector.
The GaSe/SnS2The heterojunction film is prepared on a silicate glass substrate by adopting a liquid phase stripping method or a chemical vapor deposition CVD method to form a monomolecular layer or a small molecular layer structure.
The additional electrode material is tin-doped indium oxide, gold or silver, and the direction of the applied electrode is vertical to the polarization direction of the terahertz wave.
The active control direct current power supply is a programmable direct current power supply, and direct current voltage and any waveform required by electric control are applied between the additional electrodes;
the linear polarization terahertz source is used for outputting any terahertz transmitter through a terahertz polarizer.
The terahertz detector is a terahertz power detector and a terahertz time-domain spectrometer and is used for detecting the passing of GaSe/SnS2And the terahertz wave intensity, the electric field amplitude and the frequency spectrum after the heterojunction film voltage modulation.
The invention is realized by the following technical scheme that the method is based on GaSe/SnS2The automatically controlled terahertz of heteroconjunctiva intensity modulation device, this device and experimental apparatus include: the output pulse of the femtosecond laser pumping source 1 passes through the terahertz wave generating crystal 2, then passes through the beam expanding, collimating and focusing of the parabolic mirror pair 3, and then enters GaSe/SnS2The heterojunction film 4 applies modulation voltage on the heterojunction film 4 through a programmable direct current power supply 6, and the power or electric field intensity of the modulated terahertz wave is measured by a terahertz detector 5. The experimental schematic diagram of the device is shown in figure 1, and the implementation effect of the electric control intensity modulation in the terahertz wave band is shown in figure 2.
GaSe/SnS as described above2The heterojunction film 4 is prepared by a liquid phase stripping method or a Chemical Vapor Deposition (CVD) method, has a single heterojunction layer or few heterojunction layers (2-10 layers), and is added with electrodes by a deposition method or an embedding method in a direction perpendicular to the polarization direction of the terahertz waves, wherein the sizes of the electrodes are as follows: length 10mm, width 5mm, thickness 006mm, the electrode spacing was 5 mm.
The programmable direct current power supply 6 is a commercial product or a modularized integrated direct current power supply, can output any required waveform and positive and negative voltages, and meets the requirement of GaSe/SnS2Active modulation of the heterojunction membrane 4.
The femtosecond laser pumping source 1 is a femtosecond laser generated in the prior art.
The terahertz generation crystal 2 is an existing commercial electro-optic crystal product.
The parabolic mirror pair 3 is formed by a pair of metal off-axis parabolic mirrors.
The terahertz detector 5 is a commercial Golay-cell and a terahertz time-domain spectrometer, and is used for measuring terahertz wave power and electric field intensity (frequency spectrum) respectively.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (3)
1. An electric control terahertz intensity modulation device of a gallium selenide/tin disulfide heterojunction film is characterized by comprising GaSe/SnS2The terahertz waves generated by the linearly polarized THz source are incident to the GaSe/SnS2Heterojunction thin film, GaSe/SnS2The heterojunction film is prepared on a silicate glass substrate by adopting a liquid phase stripping method or a Chemical Vapor Deposition (CVD) method to form a monomolecular layer or a small molecular layer structure; actively controlling a direct current power supply to couple GaSe/SnS in a direction vertical to the polarization direction of the terahertz waves through an additional electrode2The heterojunction film applies a modulating voltage and the additional electrode is a lateral electrode, i.e. a heterojunction in-plane electrode.
2. The gallium selenide/tin disulfide heterojunction film electric control terahertz intensity modulation device of claim 1, wherein the additional electrode material is tin-doped indium oxide, gold or silver.
3. The gallium selenide/tin disulfide heterojunction film electric control terahertz intensity modulation device as claimed in claim 1, wherein the active control direct current power supply is a programmable direct current power supply, and direct current voltage and arbitrary waveform required by electric control are applied between the additional electrodes.
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| CN103399349A (en) * | 2013-07-26 | 2013-11-20 | 清华大学 | Terahertz electromagnetic wave detector based on carbon nanotube-nickel heterojunction |
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| Title |
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