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CN111551519A - Oxygen detection vertical cavity surface emitting laser - Google Patents

Oxygen detection vertical cavity surface emitting laser Download PDF

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Publication number
CN111551519A
CN111551519A CN202010425958.0A CN202010425958A CN111551519A CN 111551519 A CN111551519 A CN 111551519A CN 202010425958 A CN202010425958 A CN 202010425958A CN 111551519 A CN111551519 A CN 111551519A
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CN
China
Prior art keywords
laser
protective cover
oxygen
semiconductor laser
thermistor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010425958.0A
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Chinese (zh)
Inventor
黎祥
黎垚
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Wuhan Oboo Technology Co ltd
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Wuhan Oboo Technology Co ltd
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Application filed by Wuhan Oboo Technology Co ltd filed Critical Wuhan Oboo Technology Co ltd
Priority to CN202010425958.0A priority Critical patent/CN111551519A/en
Publication of CN111551519A publication Critical patent/CN111551519A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261Non-optical elements, e.g. laser driver components, heaters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • G01N2021/396Type of laser source

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses an oxygen detection vertical cavity surface emitting laser, and particularly relates to the technical field of oxygen gas concentration measurement. The invention is provided with the laser chip, the thermistor and the temperature controller, ensures the reliability of long-term work, enables the working temperature of the semiconductor laser to be tunable, is beneficial to outputting accurate absorption peak wavelength laser, has extremely good heat conduction, enables the wavelength of the semiconductor laser not to deviate, is provided with the protective cover, and inserts the insertion block into the slot, realizes the installation of the protective cover, and observes the numerical value in the display screen through the transparent window.

Description

Oxygen detection vertical cavity surface emitting laser
Technical Field
The invention relates to the technical field of oxygen gas concentration measurement, in particular to an oxygen detection vertical cavity surface emitting laser.
Background
The oxygen in the earth is the prime power for human and animal and plant survival, and the oxygen content in the atmosphere is required to be certain, when the oxygen content in the environment is lower than 21% VOL, the oxygen is considered as oxygen-poor, when the oxygen content in the environment is higher than 40% VOL, the oxygen-poor and the oxygen-rich can poison and even die the human and animal needing the oxygen, and meanwhile, in order to ensure the production safety, the production workshop of an oxygen plant and the storehouse for storing oxygen bottles need to monitor the oxygen concentration.
In practical use, however, there still exist many disadvantages, such as wavelength inaccuracy caused by wavelength shift of the semiconductor laser.
Disclosure of Invention
In order to overcome the above defects in the prior art, embodiments of the present invention provide an oxygen detection vertical cavity surface emitting laser, which includes a laser chip, a thermistor, and a temperature controller, wherein the laser chip employs a highly aluminum-doped and Y-shaped contact heat dissipation structure, so as to ensure long-term reliability of operation, the temperature controller enables the operating temperature of the semiconductor laser to be tunable, which facilitates outputting of accurate absorption peak wavelength laser, and the semiconductor laser, the thermistor, and a heat sink are welded by using nano silver particles, so that the semiconductor laser has extremely good thermal conductivity, no temperature difference exists, no wavelength shift of the semiconductor laser occurs, and the wavelength is precise, thereby solving the problems in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a vertical cavity surface emitting laser for oxygen detection comprises a shell, wherein a display screen is embedded in the surface of the shell, a signal output interface is fixedly arranged at the top end of the shell, a wire is arranged inside the signal output interface, one end of the wire is fixedly connected with a laser shell, a plurality of light emitting holes are formed inside the laser shell, the light emitting holes are annularly arranged, and a temperature controller is arranged at the bottom end of an inner cavity of the laser shell;
the end of laser instrument casing is provided with the laser head, the laser head links to each other with the light-emitting hole, temperature controller's top is provided with semiconductor laser, semiconductor laser's surface mounting has the laser instrument chip, one side of laser instrument chip is provided with thermistor, thermistor welding is on semiconductor laser, the laser instrument chip adopts the height to dope aluminium and Y type contact heat radiation structure, thermistor and semiconductor laser adopt SIC heat sink, use the welding of nanometer silver granule between semiconductor laser and thermistor and heat sink.
Further, the one end that the circumference side outer wall of wire is close to the signal output interface is equipped with the magic and pastes the sub-subsides, and the one end that the circumference side outer wall of wire is close to the laser instrument casing is equipped with the magic and pastes female subsides, the magic is pasted female and is pasted and bond between the sub-subsides of magic.
Furthermore, a control keyboard is arranged below the display screen, and a slot is formed in the bottom of the control keyboard.
Further, one side of casing is provided with the protective cover, a side surface of protective cover is provided with the inserted block, and the protective cover passes through hinge swing joint with the casing.
Further, the other side surface mounting of protective cover has the shifting block, the setting of pegging graft is matchd with the slot to the inserted block.
Further, the surface of protective cover is provided with the transparent window, the circumference side outer wall of transparent window is provided with sealed the pad, sealed pad and the surface laminating of casing.
The invention has the technical effects and advantages that:
1. according to the invention, the laser chip, the thermistor and the temperature controller are arranged, the laser chip adopts a highly-doped aluminum and Y-shaped contact heat dissipation structure, the reliability of long-term operation is ensured, the temperature controller enables the working temperature of the semiconductor laser to be tunable, the accurate absorption peak wavelength laser is favorably output, the semiconductor laser, the thermistor and the heat sink are welded by using nano silver particles, the semiconductor laser has extremely good heat conduction, the working temperature of the laser chip is ensured to be consistent with the detection temperature of the thermistor, no temperature difference exists, the design can enable the wavelength of the semiconductor laser not to deviate, the wavelength is accurate, and compared with the prior art, the problem of inaccurate wavelength caused by the wavelength deviation of the semiconductor laser is solved;
2. the protective cover is arranged and covers the front surface of the shell, the inserting block is inserted into the inserting groove, the protective cover is installed, numerical values in the display screen are observed through the transparent window, the protective cover is opened through the shifting block, and the protective cover and the shell are moved through the hinge.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention.
FIG. 2 is a schematic view of a light-emitting hole structure according to the present invention.
Fig. 3 is a schematic structural diagram of a laser housing according to the present invention.
Fig. 4 is a perspective view of the protecting cover of the present invention.
The reference signs are: the laser comprises a shell 1, a control keyboard 2, a slot 3, a display screen 4, a signal output interface 5, a wire 6, a magic tape 7, a magic tape 8, a laser shell 9, a luminous hole 10, a protective cover 11, an insertion block 12, a transparent window 13, a sealing pad 14, a laser head 15, a temperature controller 16, a semiconductor laser 17, a laser chip 18, a shifting block 19 and a thermistor 20.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The oxygen detection vertical cavity surface emitting laser comprises a shell 1, wherein a display screen 4 is embedded in the surface of the shell 1, a signal output interface 5 is fixedly arranged at the top end of the shell 1, a wire 6 is arranged inside the signal output interface 5, one end of the wire 6 is fixedly connected with a laser shell 9, a plurality of light emitting holes 10 are arranged inside the laser shell 9, the light emitting holes 10 are annularly arranged, and a temperature controller 16 is arranged at the bottom end of an inner cavity of the laser shell 9;
the end of laser instrument casing 9 is provided with laser head 15, laser head 15 links to each other with light-emitting hole 10, the top of temperature controller 16 is provided with semiconductor laser 17, semiconductor laser 17's surface mounting has laser chip 18, one side of laser chip 18 is provided with thermistor 20, and thermistor 20 welds on semiconductor laser 17, laser chip 18 adopts the height to dope aluminium and Y type contact heat radiation structure, and thermistor 20 adopts SIC heat sink with semiconductor laser 17, use the welding of nanometer silver granule between semiconductor laser 17 and thermistor 20 and the heat sink.
The one end that the circumference side outer wall of wire 6 is close to signal output interface 5 is equipped with the magic and pastes sub-7, and the one end that the circumference side outer wall of wire 6 is close to laser instrument casing 9 is equipped with the magic and pastes female 8 of pasting, the magic is pasted and is pasted between female 8 and the magic subsides sub-7 and bond.
As shown in fig. 1-3, in the actual use process, the magic tape female tape 8 and the magic tape male tape 7 can be separated to realize the disassembly of the lead 6 and facilitate the monitoring of the gas, wherein the laser chip 18 adopts a highly aluminum-doped and Y-shaped contact heat dissipation structure to ensure the reliability of long-term operation, the design of accurate calculation of the light emitting hole 10 ensures the output of single-mode light, the temperature controller 16 is arranged in the laser housing 9 to make the working temperature of the semiconductor laser 17 tunable and facilitate the output of accurate absorption peak wavelength laser, the thermistor 20 and the semiconductor laser 17 adopt SIC heat sink, the semiconductor laser 17 is welded with the thermistor 20 and the heat sink by using nano silver particles, so that the semiconductor laser has extremely good heat conduction, the working temperature of the laser chip 18 is ensured to be consistent with the detection temperature of the thermistor 20, no temperature difference exists, the design can make the wavelength of the semiconductor laser 17 not deviate, the wavelength is accurate, has low threshold value, low-power consumption, and the stable performance, and this embodiment has specifically solved the inaccurate problem of semiconductor laser 17 wavelength skew lead to the wavelength.
A control keyboard 2 is arranged below the display screen 4, and a slot 3 is arranged at the bottom of the control keyboard 2.
One side of casing 1 is provided with protective cover 11, a side surface of protective cover 11 is provided with inserted block 12, and protective cover 11 passes through hinge swing joint with casing 1.
The other side surface mounting of protective cover 11 has shifting block 19, inserted block 12 and slot 3 match the grafting setting.
The surface of protective cover 11 is provided with transparent window 13, the circumference side outer wall of transparent window 13 is provided with sealed pad 14, sealed pad 14 and the surface laminating of casing 1.
As shown in fig. 1 and 4, the implementation scenario specifically includes: during the use, protective cover 11 lid is at the front surface of casing 1, and the inside of slot 3 is inserted to inserted block 12, has realized protective cover 11's installation, observes the numerical value in the display screen 4 through transparent window 13, and wherein when needs are controlled casing 1, opens protective cover 11 through shifting block 19, and protective cover 11 passes through the hinge with casing 1 and realizes the activity, through the work of the steerable semiconductor laser 17 of control keyboard 2.
The working principle of the invention is as follows:
referring to the attached drawings 1-3 of the specification, a laser chip 18, a thermistor 20 and a temperature controller 16 are arranged, the laser chip 18 adopts a highly aluminum-doped and Y-shaped contact heat dissipation structure, the reliability of long-term operation is ensured, the temperature controller 16 enables the working temperature of the semiconductor laser 17 to be tunable, accurate absorption peak wavelength laser output is facilitated, the semiconductor laser 17 is welded with the thermistor 20 and a heat sink by using nano silver particles, the semiconductor laser has extremely good heat conduction, the working temperature of the laser chip 18 is ensured to be consistent with the detection temperature of the thermistor 20, no temperature difference exists, the design can enable the wavelength of the semiconductor laser 17 not to deviate, the wavelength is accurate, and the problem that the wavelength of the semiconductor laser 17 deviates to cause inaccurate wavelength is solved.
Referring to the attached drawings 1 and 4 of the specification, a protective cover 11 is arranged, the protective cover 11 covers the front surface of the shell 1, the inserting block 12 is inserted into the inserting groove 3, the protective cover 11 is installed, numerical values in the display screen 4 are observed through the transparent window 13, the protective cover 11 is opened through the shifting block 19, and the protective cover 11 and the shell 1 move through a hinge.
Finally, the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all of them should be covered in the claims of the present invention.

Claims (6)

1. An oxygen detection vertical cavity surface emitting laser, comprising a housing (1), characterized in that: a display screen (4) is embedded into the surface of the shell (1), a signal output interface (5) is fixedly arranged at the top end of the shell (1), a wire (6) is installed inside the signal output interface (5), one end of the wire (6) is fixedly connected with a laser shell (9), a plurality of light emitting holes (10) are formed inside the laser shell (9), the light emitting holes (10) are annularly arranged, and a temperature controller (16) is installed at the bottom end of an inner cavity of the laser shell (9);
the end of laser instrument casing (9) is provided with laser head (15), laser head (15) link to each other with light-emitting hole (10), the top of temperature controller (16) is provided with semiconductor laser (17), the surface mounting of semiconductor laser (17) has laser chip (18), one side of laser chip (18) is provided with thermistor (20), thermistor (20) welding is on semiconductor laser (17), laser chip (18) adopt high aluminium and Y type contact heat radiation structure of mixing, thermistor (20) and semiconductor laser (17) adopt SIC heat sink, use the welding of nanometer silver granule between semiconductor laser (17) and thermistor (20) and heat sink.
2. The oxygen-detecting vertical cavity surface emitting laser according to claim 1, wherein: the one end that the circumference side outer wall of wire (6) is close to signal output interface (5) is equipped with magic subsides son and pastes (7), and the one end that the circumference side outer wall of wire (6) is close to laser instrument casing (9) is equipped with the magic and pastes female (8), the magic is pasted female (8) and is pasted between the son subsides (7) with the magic and bond.
3. The oxygen-detecting vertical cavity surface emitting laser according to claim 1, wherein: the display screen is characterized in that a control keyboard (2) is arranged below the display screen (4), and a slot (3) is formed in the bottom of the control keyboard (2).
4. The oxygen-detecting vertical cavity surface emitting laser according to claim 1, wherein: one side of casing (1) is provided with protective cover (11), one side surface of protective cover (11) is provided with inserted block (12), and protective cover (11) and casing (1) pass through hinge swing joint.
5. The oxygen-detecting VCSEL of claim 4, wherein: the other side surface mounting of protective cover (11) has shifting block (19), plug block (12) and slot (3) match the grafting setting.
6. The oxygen-detecting VCSEL of claim 4, wherein: the surface of protective cover (11) is provided with transparent window (13), the circumference side outer wall of transparent window (13) is provided with sealed pad (14), sealed pad (14) and the surface laminating of casing (1).
CN202010425958.0A 2020-05-19 2020-05-19 Oxygen detection vertical cavity surface emitting laser Pending CN111551519A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010425958.0A CN111551519A (en) 2020-05-19 2020-05-19 Oxygen detection vertical cavity surface emitting laser

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Application Number Priority Date Filing Date Title
CN202010425958.0A CN111551519A (en) 2020-05-19 2020-05-19 Oxygen detection vertical cavity surface emitting laser

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Cited By (1)

* Cited by examiner, † Cited by third party
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CN116734794B (en) * 2023-08-16 2023-11-07 吉林省恒玖科技有限公司 High-precision digital normal measurement system and measurement method

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